CN117836872A - 透明电极及其制作方法、以及使用了透明电极的电子器件 - Google Patents

透明电极及其制作方法、以及使用了透明电极的电子器件 Download PDF

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Publication number
CN117836872A
CN117836872A CN202280056820.5A CN202280056820A CN117836872A CN 117836872 A CN117836872 A CN 117836872A CN 202280056820 A CN202280056820 A CN 202280056820A CN 117836872 A CN117836872 A CN 117836872A
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CN
China
Prior art keywords
transparent electrode
silver nanowires
electrode according
network
compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280056820.5A
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English (en)
Chinese (zh)
Inventor
信田直美
内藤胜之
齐田穣
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Energy Systems and Solutions Corp
Original Assignee
Toshiba Corp
Toshiba Energy Systems and Solutions Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Energy Systems and Solutions Corp filed Critical Toshiba Corp
Publication of CN117836872A publication Critical patent/CN117836872A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
CN202280056820.5A 2022-07-05 2022-07-05 透明电极及其制作方法、以及使用了透明电极的电子器件 Pending CN117836872A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/026768 WO2024009411A1 (ja) 2022-07-05 2022-07-05 透明電極およびその作製方法、ならびに透明電極を用いた電子デバイス

Publications (1)

Publication Number Publication Date
CN117836872A true CN117836872A (zh) 2024-04-05

Family

ID=89452989

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280056820.5A Pending CN117836872A (zh) 2022-07-05 2022-07-05 透明电极及其制作方法、以及使用了透明电极的电子器件

Country Status (5)

Country Link
US (1) US12568714B2 (https=)
EP (1) EP4553858A1 (https=)
JP (1) JPWO2024009411A1 (https=)
CN (1) CN117836872A (https=)
WO (1) WO2024009411A1 (https=)

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060219133A1 (en) * 2005-04-01 2006-10-05 Toda Kogyo Corporation Colored resin particles, water-based dispersion containing the colored resin particles, and ink for ink-jet printing or color filter
US7745498B2 (en) 2005-04-13 2010-06-29 Nanosys, Inc. Nanowire dispersion compositions and uses thereof
US8323744B2 (en) * 2009-01-09 2012-12-04 The Board Of Trustees Of The Leland Stanford Junior University Systems, methods, devices and arrangements for nanowire meshes
KR101795419B1 (ko) * 2011-01-26 2017-11-13 주식회사 잉크테크 투명 도전막의 제조방법 및 이에 의해 제조된 투명 도전막
JP2013084571A (ja) * 2011-09-29 2013-05-09 Fujifilm Corp 透明導電性塗布膜、透明導電性インク、及びそれらを用いたタッチパネル
JP6142870B2 (ja) 2012-04-05 2017-06-07 コニカミノルタ株式会社 有機光電変換素子およびこれを用いた太陽電池
US20160035927A1 (en) * 2014-08-01 2016-02-04 International Business Machines Corporation Tandem Kesterite-Perovskite Photovoltaic Device
CN108615823B (zh) * 2015-01-26 2020-08-21 德山金属株式会社 金属纳米线及包含它的透射性电极及有机发光元件
JP6697406B2 (ja) * 2016-01-21 2020-05-20 株式会社東芝 透明電極、電子デバイス、および電子デバイスの製造方法
JP6847737B2 (ja) * 2017-03-30 2021-03-24 トッパン・フォームズ株式会社 透明導電性基板
KR101926034B1 (ko) * 2017-06-29 2019-02-26 한국과학기술연구원 굴곡진 금속 나노와이어 네트워크 박막, 이를 포함하는 신축성 투명전극 및 이의 제조방법
JP2019128992A (ja) * 2018-01-22 2019-08-01 Ｄｏｗａエレクトロニクス株式会社 銀ナノワイヤインクおよびその製造法
JP7204890B2 (ja) 2019-09-10 2023-01-16 株式会社東芝 電極の製造方法および光電変換素子の製造方法
WO2022190336A1 (ja) 2021-03-12 2022-09-15 株式会社 東芝 透明電極およびその作製方法、ならびに透明電極を用いた電子デバイス
CN115997281A (zh) 2021-08-19 2023-04-21 株式会社东芝 导电部件、电子装置及导电部件的制造方法
CN114334274B (zh) * 2021-12-17 2024-03-08 深圳市善柔科技有限公司 银纳米线薄膜及其制备方法

Also Published As

Publication number Publication date
JPWO2024009411A1 (https=) 2024-01-11
US12568714B2 (en) 2026-03-03
US20240222535A1 (en) 2024-07-04
WO2024009411A1 (ja) 2024-01-11
EP4553858A1 (en) 2025-05-14

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