CN117832082A - Preparation process of high-back-pressure diode - Google Patents
Preparation process of high-back-pressure diode Download PDFInfo
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- CN117832082A CN117832082A CN202410008652.3A CN202410008652A CN117832082A CN 117832082 A CN117832082 A CN 117832082A CN 202410008652 A CN202410008652 A CN 202410008652A CN 117832082 A CN117832082 A CN 117832082A
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- 238000002360 preparation method Methods 0.000 title abstract description 6
- 238000005530 etching Methods 0.000 claims abstract description 62
- 238000001035 drying Methods 0.000 claims abstract description 41
- 238000004140 cleaning Methods 0.000 claims abstract description 28
- 239000000463 material Substances 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 12
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 11
- 238000001039 wet etching Methods 0.000 claims abstract description 11
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 238000001704 evaporation Methods 0.000 claims abstract description 6
- 238000001259 photo etching Methods 0.000 claims abstract description 6
- 239000007788 liquid Substances 0.000 claims description 26
- 125000000896 monocarboxylic acid group Chemical group 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 20
- 239000000243 solution Substances 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 239000007864 aqueous solution Substances 0.000 claims description 10
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 8
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 5
- 239000008367 deionised water Substances 0.000 claims description 5
- 229910021641 deionized water Inorganic materials 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 claims description 5
- 239000003344 environmental pollutant Substances 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 5
- 229910017604 nitric acid Inorganic materials 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 5
- 231100000719 pollutant Toxicity 0.000 claims description 5
- 238000012545 processing Methods 0.000 claims description 5
- 238000012360 testing method Methods 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 238000004806 packaging method and process Methods 0.000 abstract 1
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 230000001681 protective effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Abstract
The invention relates to the technical field of diode preparation, in particular to a preparation process of a high back-pressure diode, which comprises the following steps: s1, selecting a proper semiconductor material; s2, cleaning and decontaminating the wafer; s3, exposing the oxide film in the area of the active area through photoetching, and protecting other areas by using a photoresist; s4, wet etching is carried out on the oxide layer to form a contact hole; s5, removing the oxide film at the lead hole through the etching solution; s6, evaporating a Ni layer on the surface of the wafer to form a metal electrode; s7, corroding the Ni layer, cleaning after corroding, and drying after cleaning; s8, connecting the metal electrode to the wafer by utilizing high-precision electronic equipment; and S9, packaging the processed wafer. The invention etches the wafer by reducing single etching time and increasing etching times, thereby improving the uniformity of etching the wafer and the uniformity of device performance.
Description
Technical Field
The invention relates to the technical field of diode preparation, in particular to a preparation process of a high-back-voltage diode.
Background
A high back-voltage diode is a specially designed diode for withstanding higher reverse voltages in high voltage applications. High back-voltage diodes are capable of withstanding relatively high reverse voltages, typically in the range of hundreds to thousands of volts, which makes them suitable for use in high voltage power supplies, power systems, and high voltage measurement applications.
In the field of semiconductor discrete devices, schottky diodes are a widely used device. The power supply has the characteristics of low power consumption, high current and high switching speed. The forward voltage drop can reach about 0.4V, and the common diode is about 0.7V. The switching speed can be as small as a few nanoseconds and the rectified current can reach hundreds of amperes. Meanwhile, the method has the characteristics of low noise, high detection sensitivity, stability, reliability and the like. The circuit is used as a high-frequency, low-voltage, high-current rectifying diode, a freewheeling diode and a protective diode in a switching power supply, a rectifying filter circuit and the like, or is used as a rectifying diode and a small-signal detecting diode in a circuit such as microwave communication and the like.
Wafer etching is one of the important processes for manufacturing semiconductor material diodes, and is usually performed using chemical etching techniques, but at present, the etching speed of different areas of the wafer may be different, resulting in inconsistent device performance, so we propose a high back-pressure diode manufacturing process to solve the above-mentioned problems.
Disclosure of Invention
The invention aims to solve the defect that the corrosion speeds of different areas of a wafer possibly have differences in the prior art, so that the performances of devices are inconsistent.
In order to achieve the above purpose, the present invention adopts the following technical scheme:
a process for preparing a high back-pressure diode, comprising the steps of:
s1, selecting a semiconductor material with proper thickness, finely processing and doping the material to obtain required electronic characteristics, and manufacturing a diffusion wafer;
s2, cleaning and decontaminating the wafer to ensure that the surface is free of impurities and pollutants, and oxidizing the surface of the wafer after cleaning to form a layer of compact oxide film on the surface of the wafer;
s3, exposing the oxide film in the area of the active area through photoetching, and protecting other areas by using a photoresist;
s4, wet etching is carried out on the oxide layer to form a contact hole;
s5, removing the oxide film at the lead hole through the etching solution;
s6, evaporating a Ni layer on the surface of the wafer to form a metal electrode;
s7, corroding the Ni layer, cleaning after corroding, and drying after cleaning;
s8, connecting the metal electrode to the wafer by utilizing high-precision electronic equipment;
and S9, placing the processed wafer in a proper package, and testing the packaged diode.
As a preferable embodiment of the present invention, the thickness of the oxide film is 10-15 μm.
As a preferable technical scheme of the invention, the specific steps of wet etching are as follows: and etching the oxide layer for 30-40S by adopting a gap in which the first etching liquid drops fall in the photoresist layer, and repeatedly etching for 3-5 times by adopting the first etching liquid, wherein the temperature of the first etching liquid is 10-15 ℃.
As a preferable technical scheme of the invention, the first corrosive liquid contains HNO 3 And CH (CH) 3 Aqueous solution of COOH, HNO in first corrosive liquid 3 And CH (CH) 3 The total mass concentration of COOH is 60-80%, HNO 3 And CH (CH) 3 The mass ratio of COOH is 1:2-3.
As a preferable technical scheme of the invention, the method for corroding the Ni layer comprises the following steps: covering the surface of Ni layer with a second etching solution containing HNO at 18-22deg.C for 30-45S for 2-3 times 3 HF and CH 3 COOH aqueous solution, HNO in second etching solution 3 HF and CH 3 The total mass concentration of COOH is 10-15%, and the mass ratio of HNO3, HF and CH3COOH is 3-5:1:2.
as a preferable technical scheme of the invention, the specific method for cleaning in the step S7 is as follows: the wafer was placed in deionized water, which was flooded for 2-4 minutes at 25-30 ℃.
As a preferable technical scheme of the invention, the specific method for drying in S7 is as follows: firstly, spin-drying the cleaned wafer, putting the wafer into a drying oven for drying after spin-drying, wherein the temperature of the drying oven is 50-60 ℃, and the drying time is 20-40min.
The beneficial effects of the invention are as follows:
1. the invention etches the wafer by reducing single etching time and increasing etching times, thereby improving the uniformity of etching the wafer and the uniformity of device performance.
2. By etching the oxide layer and the Ni layer separately, the uniformity of etching is further improved, and the etching rate can be better controlled.
Detailed Description
The invention is further illustrated below in connection with specific embodiments.
Embodiment one:
a process for preparing a high back-pressure diode, comprising the steps of:
s1, selecting a semiconductor material with proper thickness, finely processing and doping the material to obtain required electronic characteristics, and manufacturing a diffusion wafer;
s2, cleaning and decontaminating the wafer to ensure that the surface is free of impurities and pollutants, and oxidizing the surface of the wafer after cleaning to form a layer of compact oxide film on the surface of the wafer;
s3, exposing the oxide film in the area of the active area through photoetching, and protecting other areas by using a photoresist;
s4, wet etching is carried out on the oxide layer to form a contact hole;
s5, removing the oxide film at the lead hole through the etching solution;
s6, evaporating a Ni layer on the surface of the wafer to form a metal electrode;
s7, corroding the Ni layer, cleaning after corroding, and drying after cleaning;
s8, connecting the metal electrode to the wafer by utilizing high-precision electronic equipment;
and S9, placing the processed wafer in a proper package, and testing the packaged diode.
Further, the thickness of the oxide film was 10. Mu.m.
Further, the specific steps of the wet etching are as follows: and etching the oxide layer for 30S by adopting a gap in which the first etching liquid drops fall in the photoresist layer, and repeatedly etching for 3 times by adopting the first etching liquid, wherein the temperature of the first etching liquid is 10 ℃.
Further, the first corrosive liquid contains HNO 3 And CH (CH) 3 Aqueous solution of COOH, HNO in first corrosive liquid 3 And CH (CH) 3 Total mass concentration of COOH was 60%, HNO 3 And CH (CH) 3 The mass ratio of COOH is 1:2.
further, the method for corroding the Ni layer comprises the following steps: covering the surface 30S of the Ni layer with a second etching solution at 18deg.C for 2 times, wherein the second etching solution contains HNO 3 HF and CH 3 COOH aqueous solution, HNO in second etching solution 3 HF and CH 3 The total mass concentration of COOH was 10%, and the mass ratio of HNO3, HF and CH3COOH was 3:1:2.
further, the specific method for cleaning in S7 is as follows: the wafer was placed in deionized water, which was allowed to overflow for 2 minutes, at 25 ℃.
Further, the specific method for drying in S7 is as follows: firstly, spin-drying the cleaned wafer, putting the wafer into a drying oven for drying after spin-drying, wherein the temperature of the drying oven is 50 ℃, and drying for 20min.
Embodiment two:
a process for preparing a high back-pressure diode, comprising the steps of:
s1, selecting a semiconductor material with proper thickness, finely processing and doping the material to obtain required electronic characteristics, and manufacturing a diffusion wafer;
s2, cleaning and decontaminating the wafer to ensure that the surface is free of impurities and pollutants, and oxidizing the surface of the wafer after cleaning to form a layer of compact oxide film on the surface of the wafer;
s3, exposing the oxide film in the area of the active area through photoetching, and protecting other areas by using a photoresist;
s4, wet etching is carried out on the oxide layer to form a contact hole;
s5, removing the oxide film at the lead hole through the etching solution;
s6, evaporating a Ni layer on the surface of the wafer to form a metal electrode;
s7, corroding the Ni layer, cleaning after corroding, and drying after cleaning;
s8, connecting the metal electrode to the wafer by utilizing high-precision electronic equipment;
and S9, placing the processed wafer in a proper package, and testing the packaged diode.
Further, the thickness of the oxide film was 13. Mu.m.
Further, the specific steps of the wet etching are as follows: and etching the oxide layer by adopting a gap in which the first etching liquid drops in the photoresist layer for 35S by adopting a first etching liquid, and repeatedly etching for 4 times by adopting the first etching liquid, wherein the temperature of the first etching liquid is 13 ℃.
Further, the first corrosive liquid contains HNO 3 And CH (CH) 3 Aqueous solution of COOH, HNO in first corrosive liquid 3 And CH (CH) 3 Total mass concentration of COOH was 70%, HNO 3 And CH (CH) 3 The mass ratio of COOH is 1:2.5.
further, the method for corroding the Ni layer comprises the following steps: covering the surface 40S of the Ni layer with a second etching solution at 20deg.C for 2 times, wherein the second etching solution contains HNO 3 HF and CH 3 COOH aqueous solution, HNO in second etching solution 3 HF and CH 3 The total mass concentration of COOH was 13%, and the mass ratio of HNO3, HF and CH3COOH was 4:1:2.
further, the specific method for cleaning in S7 is as follows: the wafer was placed in deionized water, which was allowed to overflow for 3min at 28 ℃.
Further, the specific method for drying in S7 is as follows: firstly, spin-drying the cleaned wafer, putting the wafer into a drying oven for drying after spin-drying, wherein the temperature of the drying oven is 55 ℃, and drying for 30min.
Embodiment III:
a process for preparing a high back-pressure diode, comprising the steps of:
s1, selecting a semiconductor material with proper thickness, finely processing and doping the material to obtain required electronic characteristics, and manufacturing a diffusion wafer;
s2, cleaning and decontaminating the wafer to ensure that the surface is free of impurities and pollutants, and oxidizing the surface of the wafer after cleaning to form a layer of compact oxide film on the surface of the wafer;
s3, exposing the oxide film in the area of the active area through photoetching, and protecting other areas by using a photoresist;
s4, wet etching is carried out on the oxide layer to form a contact hole;
s5, removing the oxide film at the lead hole through the etching solution;
s6, evaporating a Ni layer on the surface of the wafer to form a metal electrode;
s7, corroding the Ni layer, cleaning after corroding, and drying after cleaning;
s8, connecting the metal electrode to the wafer by utilizing high-precision electronic equipment;
and S9, placing the processed wafer in a proper package, and testing the packaged diode.
Further, the thickness of the oxide film was 15. Mu.m.
Further, the specific steps of the wet etching are as follows: and etching the oxide layer by adopting a gap in which the first etching liquid drops in the photoresist layer by using a first etching liquid for 40S, and repeatedly etching for 5 times by adopting the first etching liquid, wherein the temperature of the first etching liquid is 15 ℃.
Further, the first corrosive liquid contains HNO 3 And CH (CH) 3 Aqueous solution of COOH, HNO in first corrosive liquid 3 And CH (CH) 3 Total mass concentration of COOH was 80%, HNO 3 And CH (CH) 3 The mass ratio of COOH is 1:3.
further, the method for corroding the Ni layer comprises the following steps: covering the surface 45S of the Ni layer with a second etching solution at 22deg.C for 3 times, wherein the second etching solution contains HNO 3 HF and CH 3 COOH aqueous solution, HNO in second etching solution 3 HF and CH 3 The total mass concentration of COOH is 15%, HNO3, HF and CH3COThe mass ratio of OH is 5:1:2.
further, the specific method for cleaning in S7 is as follows: the wafer was placed in deionized water for 4min overflow at 30 ℃.
Further, the specific method for drying in S7 is as follows: firstly, spin-drying the cleaned wafer, putting the wafer into a drying oven for drying after spin-drying, wherein the temperature of the drying oven is 60 ℃, and drying for 40 minutes.
In summary, the wafer is etched by reducing the single etching time and increasing the etching times, so as to improve the uniformity of etching the wafer; meanwhile, the oxide layer and the Ni layer are corroded separately, so that the corrosion uniformity is further improved, the corrosion rate can be better controlled, the uniformity of the device performance is ensured, and the yield of the diode is improved.
The foregoing is only a preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art, who is within the scope of the present invention, should make equivalent substitutions or modifications according to the technical scheme of the present invention and the inventive concept thereof, and should be covered by the scope of the present invention.
Claims (7)
1. A process for preparing a high back-pressure diode, comprising the steps of:
s1, selecting a semiconductor material with proper thickness, finely processing and doping the material to obtain required electronic characteristics, and manufacturing a diffusion wafer;
s2, cleaning and decontaminating the wafer to ensure that the surface is free of impurities and pollutants, and oxidizing the surface of the wafer after cleaning to form a layer of compact oxide film on the surface of the wafer;
s3, exposing the oxide film in the area of the active area through photoetching, and protecting other areas by using a photoresist;
s4, wet etching is carried out on the oxide layer to form a contact hole;
s5, removing the oxide film at the lead hole through the etching solution;
s6, evaporating a Ni layer on the surface of the wafer to form a metal electrode;
s7, corroding the Ni layer, cleaning after corroding, and drying after cleaning;
s8, connecting the metal electrode to the wafer by utilizing high-precision electronic equipment;
and S9, placing the processed wafer in a proper package, and testing the packaged diode.
2. The process of claim 1, wherein the oxide film has a thickness of 10-15 μm.
3. The process for preparing a high back-pressure diode of claim 1, wherein the wet etching comprises the following specific steps: and etching the oxide layer for 30-40S by adopting a gap in which the first etching liquid drops fall in the photoresist layer, and repeatedly etching for 3-5 times by adopting the first etching liquid, wherein the temperature of the first etching liquid is 10-15 ℃.
4. The process of claim 3, wherein the first etching solution is HNO-containing solution 3 And CH (CH) 3 Aqueous solution of COOH, HNO in first corrosive liquid 3 And CH (CH) 3 The total mass concentration of COOH is 60-80%, HNO 3 And CH (CH) 3 The mass ratio of COOH is 1:2-3.
5. The process for preparing a high back-pressure diode of claim 1, wherein the method for etching the Ni layer comprises: covering the surface of Ni layer with a second etching solution containing HNO at 18-22deg.C for 30-45S for 2-3 times 3 HF and CH 3 COOH aqueous solution, HNO in second etching solution 3 HF and CH 3 The total mass concentration of COOH is 10-15%, and the mass ratio of HNO3, HF and CH3COOH is 3-5:1:2.
6. the process for preparing a high back-pressure diode according to claim 1, wherein the specific method of cleaning in S7 is as follows: the wafer was placed in deionized water, which was flooded for 2-4 minutes at 25-30 ℃.
7. The process for preparing a high back-pressure diode according to claim 1, wherein the specific method of drying in S7 is as follows: firstly, spin-drying the cleaned wafer, putting the wafer into a drying oven for drying after spin-drying, wherein the temperature of the drying oven is 50-60 ℃, and the drying time is 20-40min.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202410008652.3A CN117832082A (en) | 2024-01-04 | 2024-01-04 | Preparation process of high-back-pressure diode |
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| CN202410008652.3A CN117832082A (en) | 2024-01-04 | 2024-01-04 | Preparation process of high-back-pressure diode |
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| CN117832082A true CN117832082A (en) | 2024-04-05 |
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| CN202410008652.3A Pending CN117832082A (en) | 2024-01-04 | 2024-01-04 | Preparation process of high-back-pressure diode |
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