CN116163011A - Preparation method of tellurium-cadmium-mercury epitaxial material Hall test sample - Google Patents

Preparation method of tellurium-cadmium-mercury epitaxial material Hall test sample Download PDF

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CN116163011A
CN116163011A CN202310174151.8A CN202310174151A CN116163011A CN 116163011 A CN116163011 A CN 116163011A CN 202310174151 A CN202310174151 A CN 202310174151A CN 116163011 A CN116163011 A CN 116163011A
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cadmium
tellurium
mercury
epitaxial material
test sample
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黄晟
黄立
杨朝臣
张冰洁
刘永锋
汪鑫
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Wuhan Gaoxin Technology Co Ltd
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Wuhan Gaoxin Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/025—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention relates to the technical field of semiconductor material processing and preparation, and particularly provides a preparation process of a tellurium-cadmium-mercury material Hall test sample. According to the preparation process of the tellurium-cadmium-mercury epitaxial material Hall test sample, the front surface of the tellurium-cadmium-mercury epitaxial material is subjected to surface treatment and a deposited dielectric film is protected, and meanwhile, the substrate and the transition layer material on the back surface of the tellurium-cadmium-mercury epitaxial material are removed, so that accumulation of charges on the surface of the tellurium-cadmium-mercury epitaxial material and influence of mismatch dislocation defects on Hall measurement of the tellurium-cadmium-mercury epitaxial material are avoided, and the accuracy of electrical measurement of the tellurium-cadmium-mercury epitaxial material is improved.

Description

Preparation method of tellurium-cadmium-mercury epitaxial material Hall test sample
Technical Field
The invention relates to the technical field of semiconductor material processing and preparation, in particular to a preparation process of a tellurium-cadmium-mercury material Hall test sample.
Background
The photosensitive element of the mercury cadmium telluride photovoltaic detector is a photodiode, namely a P-N junction formed by contacting two conductive materials of N type and P type, and the electrical property of the mercury cadmium telluride material directly influences the performance of the mercury cadmium telluride photovoltaic detector. The existing mercury cadmium telluride material Hall test system relies on the Hall effect principle of semiconductor materials to measure the Hall parameters of the mercury cadmium telluride material. The hall test system is based on the fact that the semiconductor material belongs to single carrier conduction, and the premise of accurately measuring the electrical parameters of the semiconductor material is that the hall test system is based on the fact that the semiconductor material belongs to single carrier conduction. When multiple carriers are mixed and conductive in the semiconductor material, the Hall test system cannot accurately obtain the electrical parameters of the semiconductor material. The tellurium-cadmium-mercury material is a direct band gap narrow bandgap semiconductor material, the Hg-Te binding energy of the tellurium-cadmium-mercury material is low, hg-Te bonds on the surface of the tellurium-cadmium-mercury material are easy to break, dangling bonds are easy to form on the surface of the tellurium-cadmium-mercury material, free charges and oxygen are easy to adsorb by the formed dangling bonds, the surface charges of the tellurium-cadmium-mercury material are accumulated, the distribution of charges on the surface and the inner part of the tellurium-cadmium-mercury material is different, and when the difference is accumulated to a certain extent, the electrical parameter test of the tellurium-cadmium-mercury material is influenced. Particularly for the P-type tellurium-cadmium-mercury epitaxial material, when the surface charge of the tellurium-cadmium-mercury material is accumulated to a certain extent, the surface conductivity of the tellurium-cadmium-mercury epitaxial material is easy to change, and the electrical parameters of the tellurium-cadmium-mercury obtained by the Hall test system are inaccurate. Meanwhile, defects such as mismatch dislocation and the like are formed in a transition layer between the tellurium-cadmium-mercury epitaxial material and the heterogeneous substrate due to lattice mismatch between the tellurium-cadmium-mercury epitaxial layer and the heterogeneous substrate during epitaxial growth of the tellurium-cadmium-mercury material, and the existence of the defects such as mismatch dislocation and the like can possibly cause conductivity type transformation of the tellurium-cadmium-mercury transition layer, and can also influence the accuracy of electrical parameter test of the tellurium-cadmium-mercury epitaxial material.
In the prior art, the preparation method of the Hall test sample of the tellurium-cadmium-mercury epitaxial material generally comprises the following steps: after the surface treatment of the tellurium-cadmium-mercury epitaxial material, welding metal electrodes on four corners of the surface of the tellurium-cadmium-mercury epitaxial material, connecting the metal electrodes with a Hall test board through metal leads, and measuring Hall parameters of the tellurium-cadmium-mercury epitaxial material under different conditions on Hall test equipment. In the test method, the surface oxidation and charge accumulation of the tellurium-cadmium-mercury epitaxial material and the transformation of the conductivity type caused by the defects such as mismatch dislocation in the transition layer can influence the accuracy of measurement of the electrical parameters of the tellurium-cadmium-mercury P type material.
Thus, there is a need for a solution to the above-mentioned technical problems existing in the prior art.
Disclosure of Invention
The invention provides a preparation method of a Hall test sample of a tellurium-cadmium-mercury epitaxial material, which at least can solve part of problems in the prior art.
In order to solve the technical problems, according to one aspect of the present invention, the following technical solutions are provided:
the preparation method of the tellurium-cadmium-mercury epitaxial material Hall test sample is characterized by comprising the following steps of:
s1: removing the substrate and the transition layer material on the back of the tellurium-cadmium-mercury epitaxial material;
s2: and manufacturing a Hall electrode on the back of the tellurium-cadmium-mercury epitaxial material.
As a preferable scheme of the preparation method of the Hall test sample of the tellurium-cadmium-mercury epitaxial material, the preparation method comprises the following steps: the method further comprises the following steps before the step S1:
s0: and (3) carrying out corrosion treatment on the front surface of the tellurium-cadmium-mercury epitaxial material and preparing a dielectric film.
As a preferable scheme of the preparation method of the Hall test sample of the tellurium-cadmium-mercury epitaxial material, the preparation method comprises the following steps: the method further comprises the step of carrying out corrosion treatment on the back surface of the tellurium-cadmium-mercury epitaxial material before the step S2.
As a preferable scheme of the preparation method of the Hall test sample of the tellurium-cadmium-mercury epitaxial material, the preparation method comprises the following steps: the thickness of the front side corrosion removal of the tellurium-cadmium-mercury epitaxial material is 0.1-0.2 microns.
As a preferable scheme of the preparation method of the Hall test sample of the tellurium-cadmium-mercury epitaxial material, the preparation method comprises the following steps: the back side of the tellurium-cadmium-mercury epitaxial material is etched to remove the thickness of 2-2.5 microns.
As a preferable scheme of the preparation method of the Hall test sample of the tellurium-cadmium-mercury epitaxial material, the preparation method comprises the following steps: and (S0) adhering one surface of the dielectric film of the silicon wafer with the dielectric film deposited on the surface to the dielectric film on the surface of the tellurium-cadmium-mercury epitaxial material.
As a preferable scheme of the preparation method of the Hall test sample of the tellurium-cadmium-mercury epitaxial material, the preparation method comprises the following steps: the dielectric film material in the step S0 is selected from one of zinc sulfide, cadmium telluride or silicon oxide.
As a preferable scheme of the preparation method of the Hall test sample of the tellurium-cadmium-mercury epitaxial material, the preparation method comprises the following steps: the etching solution adopted in the front etching treatment of the tellurium-cadmium-mercury epitaxial material is a bromomethanol solution or a bromoethanol solution.
As a preferable scheme of the preparation method of the Hall test sample of the tellurium-cadmium-mercury epitaxial material, the preparation method comprises the following steps: the etching solution adopted for the back etching treatment of the tellurium-cadmium-mercury epitaxial material is selected from bromomethanol solution, bromoethanol solution or hydrobromic acid solution.
As a preferable scheme of the preparation method of the Hall test sample of the tellurium-cadmium-mercury epitaxial material, the preparation method comprises the following steps: the dielectric film deposited on the surface of the silicon wafer is made of silicon oxide.
As a preferable scheme of the preparation method of the Hall test sample of the tellurium-cadmium-mercury epitaxial material, the preparation method comprises the following steps: the thickness of the silicon oxide dielectric film is 0.1-0.5 micrometers.
As a preferable scheme of the preparation method of the Hall test sample of the tellurium-cadmium-mercury epitaxial material, the preparation method comprises the following steps: the adhesion treatment is performed by using molten paraffin or epoxy resin as a material.
As a preferable scheme of the preparation method of the Hall test sample of the tellurium-cadmium-mercury epitaxial material, the preparation method comprises the following steps: the specific method of the step S1 is as follows: the method comprises the steps of firstly adopting a thinning machine to carry out thinning treatment on a substrate material, and then adopting corrosive liquid to completely remove the residual substrate material and the transition layer material.
As a preferable scheme of the preparation method of the Hall test sample of the tellurium-cadmium-mercury epitaxial material, the preparation method comprises the following steps: the thickness remaining after the thinning process of the substrate material is 20-30 microns.
The beneficial effects of the invention are as follows:
1. the method removes the substrate and the transition layer material on the back of the tellurium-cadmium-mercury epitaxial material, then connects with the Hall test board, and sets the metal electrode and the lead wire for Hall measurement on the back of the tellurium-cadmium-mercury epitaxial material, thereby effectively eliminating the influence of defects such as surface inversion of the tellurium-cadmium-mercury epitaxial material and mismatch dislocation in the interface transition layer on the Hall measurement, accurately measuring the electrical parameters of the tellurium-cadmium-mercury epitaxial material, and having very important significance for preparing tellurium-cadmium-mercury photovoltaic devices.
2. According to the invention, a layer of dielectric film is prepared by vapor deposition immediately after the front surface of the tellurium-cadmium-mercury epitaxial material is subjected to corrosion treatment, and then a silicon wafer with the deposited dielectric film on the surface and the dielectric film on the surface of the tellurium-cadmium-mercury epitaxial material are subjected to adhesion treatment, so that dangling bonds are avoided from being formed on the surface of the tellurium-cadmium-mercury epitaxial material, free charges and oxygen are not easy to adsorb on the tellurium-cadmium-mercury epitaxial material to cause charge accumulation, and the accuracy of the Hall test of the tellurium-cadmium-mercury epitaxial material is further improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to the structures shown in these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a process flow diagram of a Hall test sample of a mercury cadmium telluride epitaxial material of the present invention;
fig. 2 is a schematic structural diagram of the tellurium-cadmium-mercury epitaxial material of embodiment 3 of the present invention before the substrate and the transition layer are removed by hall test;
fig. 3 is a schematic structural diagram of the tellurium-cadmium-mercury epitaxial material of embodiment 3 after removing the substrate and the transition layer in the hall test;
fig. 4 is a schematic diagram of a back hall electrode of the mercury cadmium telluride epitaxial material of the present invention.
Reference numerals illustrate:
1-tellurium zinc cadmium substrate, 2-tellurium cadmium mercury epitaxial material transition layer, 3-tellurium cadmium mercury epitaxial material, 3-1-metal lead, 3-2-metal lead, 3-3-metal lead, 3-4-metal lead, 4-zinc sulfide dielectric film, 5-paraffin adhesion layer, 6-silicon oxide dielectric film and 7-silicon wafer.
The achievement of the objects, functional features and advantages of the present invention will be further described with reference to the accompanying drawings, in conjunction with the embodiments.
Detailed Description
The following description will be made clearly and fully with reference to the technical solutions in the embodiments, and it is apparent that the described embodiments are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that, if directional indications (such as up, down, left, right, front, and rear … …) are included in the embodiments of the present invention, the directional indications are merely used to explain the relative positional relationship, movement conditions, etc. between the components in a specific posture (as shown in the drawings), and if the specific posture is changed, the directional indications are correspondingly changed.
In addition, if there is a description of "first", "second", etc. in the embodiments of the present invention, the description of "first", "second", etc. is for descriptive purposes only and is not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In addition, the technical solutions of the embodiments may be combined with each other, but it is necessary to base that the technical solutions can be realized by those skilled in the art, and when the technical solutions are contradictory or cannot be realized, the combination of the technical solutions should be considered to be absent and not within the scope of protection claimed in the present invention.
According to the preparation process of the tellurium-cadmium-mercury material Hall test sample, a dielectric film is deposited on the front surface of the tellurium-cadmium-mercury epitaxial material for protection, and meanwhile, a substrate on the back surface of the tellurium-cadmium-mercury epitaxial material and a transition layer material are removed, so that accumulation of charges on the surface of the tellurium-cadmium-mercury epitaxial material and influence of mismatch dislocation defects on Hall measurement of the tellurium-cadmium-mercury epitaxial material can be avoided, and the accuracy of electrical measurement of the tellurium-cadmium-mercury epitaxial material is improved. The method is particularly suitable for preparing the tellurium-cadmium-mercury P-type material Hall test sample, and the accuracy of the test result obtained by carrying out Hall test on the tellurium-cadmium-mercury P-type material Hall test sample prepared by the method is greatly improved.
Example 1
A preparation method of a tellurium-cadmium-mercury epitaxial material Hall test sample adopts tellurium-zinc-cadmium as a substrate 1 material, and sequentially deposits and prepares a tellurium-cadmium-mercury epitaxial material transition layer 2 and a tellurium-cadmium-mercury epitaxial material 3 on the surface of the tellurium-zinc-cadmium substrate.
And thinning the tellurium-zinc-cadmium substrate 1 to the thickness of the rest 20 microns by adopting a thinning machine, and then completely corroding and removing the rest tellurium-zinc-cadmium substrate 1 and the tellurium-cadmium-mercury epitaxial material transition layer 2 by adopting corrosive liquid.
And (3) carrying out corrosion treatment on the back surface of the tellurium-cadmium-mercury epitaxial material 3 by using a bromomethanol solution, wherein the corrosion removal thickness is 2 microns, then placing the tellurium-cadmium-mercury epitaxial material 3 after the corrosion treatment in a nitrogen box, respectively welding metal electrodes, namely Hall electrodes, on four corners of the back surface of the tellurium-cadmium-mercury epitaxial material 3 to obtain a tellurium-cadmium-mercury epitaxial material Hall test sample, electrically connecting the Hall electrodes with a Hall test board through metal leads, and carrying out Hall parameter test on the tellurium-cadmium-mercury epitaxial material Hall test sample through Hall test equipment.
Example 2
A preparation method of a tellurium-cadmium-mercury epitaxial material Hall test sample adopts tellurium-zinc-cadmium as a substrate 1 material, and sequentially deposits and prepares a tellurium-cadmium-mercury epitaxial material transition layer 2 and a tellurium-cadmium-mercury epitaxial material 3 on the surface of the tellurium-zinc-cadmium substrate.
And (3) carrying out corrosion treatment on the front surface of the tellurium-cadmium-mercury epitaxial material 3 by using a bromomethanol solution, wherein the corrosion thickness is 0.1 micrometer, and then immediately preparing a layer of zinc sulfide dielectric film 4 on the surface of the tellurium-cadmium-mercury epitaxial material 3 by adopting an evaporation process.
And thinning the tellurium-zinc-cadmium substrate 1 to the thickness of the rest 25 micrometers by adopting a thinning machine, and then completely corroding and removing the rest tellurium-zinc-cadmium substrate 1 and the tellurium-cadmium-mercury epitaxial material transition layer 2 by adopting corrosive liquid.
And (3) carrying out corrosion treatment on the back surface of the tellurium-cadmium-mercury epitaxial material 3 by using a bromomethanol solution, wherein the corrosion removal thickness is 2.5 microns, then placing the tellurium-cadmium-mercury epitaxial material 3 after the corrosion treatment in a nitrogen box, respectively welding metal electrodes, namely Hall electrodes, on four corners of the back surface of the tellurium-cadmium-mercury epitaxial material 3, so as to obtain a tellurium-cadmium-mercury epitaxial material Hall test sample, electrically connecting the Hall electrodes with a Hall test board through metal leads, and carrying out Hall parameter test on the tellurium-cadmium-mercury epitaxial material Hall test sample through Hall test equipment.
Example 3
As shown in figures 1-4, in the preparation method of the tellurium-cadmium-mercury P-type epitaxial material Hall test sample, firstly, a silicon oxide dielectric film 6 is prepared on a silicon wafer 7 by adopting an evaporation process, the thickness of the silicon oxide dielectric film is 0.2 micrometer, and then the silicon wafer is cut into small blocks with the specification of 10 multiplied by 10mm for standby.
And sequentially depositing and preparing a tellurium-cadmium-mercury epitaxial material transition layer 2 and a tellurium-cadmium-mercury epitaxial material 3 on the surface of the tellurium-zinc-cadmium substrate by taking tellurium-zinc-cadmium as a substrate 1 material.
And (3) carrying out corrosion treatment on the front surface of the tellurium-cadmium-mercury epitaxial material 3 by using a bromoethanol solution, wherein the corrosion thickness is 0.2 microns, and then immediately preparing a layer of zinc sulfide dielectric film 4 on the surface of the tellurium-cadmium-mercury epitaxial material 3 by adopting an evaporation process.
And adhering the zinc sulfide dielectric film 4 on the front surface of the tellurium-cadmium-mercury epitaxial material 3 and the silicon oxide dielectric film 6 on the surface of the silicon wafer 7 by adopting 70 ℃ molten paraffin.
And thinning the tellurium-zinc-cadmium substrate 1 to the thickness of the rest 20 microns by adopting a thinning machine, and then completely corroding and removing the rest tellurium-zinc-cadmium substrate 1 and the tellurium-cadmium-mercury epitaxial material transition layer 2 by adopting corrosive liquid.
And (3) carrying out corrosion treatment on the back surface of the tellurium-cadmium-mercury epitaxial material 3 by using a bromoethanol solution, removing the corrosion thickness to be 2 microns, then placing the tellurium-cadmium-mercury epitaxial material 3 after the corrosion treatment in a nitrogen box, respectively welding metal electrodes, namely Hall electrodes, on four corners of the back surface of the tellurium-cadmium-mercury epitaxial material 3 to obtain a tellurium-cadmium-mercury epitaxial material Hall test sample, electrically connecting the Hall electrodes with a Hall test board through metal leads, and carrying out Hall parameter test on the tellurium-cadmium-mercury epitaxial material Hall test sample through Hall test equipment.
Example 4
A preparation method of a mercury cadmium telluride P-type epitaxial material Hall test sample comprises the steps of firstly preparing a silicon oxide dielectric film 6 on a silicon wafer 7 by adopting an evaporation process, wherein the thickness of the silicon oxide dielectric film is 0.4 micrometer, and then cutting the silicon wafer into small blocks with the specification of 10 multiplied by 10mm for later use.
And sequentially depositing and preparing a tellurium-cadmium-mercury epitaxial material transition layer 2 and a tellurium-cadmium-mercury epitaxial material 3 on the surface of the tellurium-zinc-cadmium substrate by taking tellurium-zinc-cadmium as a substrate 1 material.
And (3) carrying out corrosion treatment on the front surface of the tellurium-cadmium-mercury epitaxial material 3 by using a bromoethanol solution, wherein the corrosion thickness is 0.1 micrometer, and then immediately preparing a layer of cadmium telluride dielectric film 4 on the surface of the tellurium-cadmium-mercury epitaxial material 3 by adopting an evaporation process.
And adhering the zinc sulfide dielectric film 4 on the front surface of the tellurium-cadmium-mercury epitaxial material 3 and the silicon oxide dielectric film 6 on the surface of the silicon wafer 7 by adopting epoxy resin.
And thinning the tellurium-zinc-cadmium substrate 1 to the thickness of the rest 30 micrometers by adopting a thinning machine, and then completely corroding and removing the rest tellurium-zinc-cadmium substrate 1 and the tellurium-cadmium-mercury epitaxial material transition layer 2 by adopting corrosive liquid.
And (3) carrying out corrosion treatment on the back surface of the tellurium-cadmium-mercury epitaxial material 3 by using hydrobromic acid solution, wherein the corrosion removal thickness is 2.5 microns, then placing the tellurium-cadmium-mercury epitaxial material 3 after the corrosion treatment in a nitrogen box, respectively welding metal electrodes, namely Hall electrodes, on four corners of the back surface of the tellurium-cadmium-mercury epitaxial material 3, so as to obtain a Hall test sample of the tellurium-cadmium-mercury epitaxial material, electrically connecting the Hall electrodes with a Hall test board through metal leads, and carrying out Hall parameter test on the Hall test sample of the tellurium-cadmium-mercury epitaxial material through Hall test equipment.
The foregoing description is only of the preferred embodiments of the present invention and is not intended to limit the scope of the invention, and all equivalent structural changes made by the content of the present invention or direct/indirect application in other related technical fields are included in the scope of the present invention.

Claims (10)

1. The preparation method of the tellurium-cadmium-mercury epitaxial material Hall test sample is characterized by comprising the following steps of:
s1: removing the substrate and the transition layer material on the back of the tellurium-cadmium-mercury epitaxial material;
s2: and manufacturing a Hall electrode on the back of the tellurium-cadmium-mercury epitaxial material.
2. The method for preparing a hall test sample of a mercury cadmium telluride epitaxial material according to claim 1, further comprising the following steps before step S1:
s0: and (3) carrying out corrosion treatment on the front surface of the tellurium-cadmium-mercury epitaxial material and preparing a dielectric film.
3. The method for preparing a hall test sample of a mercury cadmium telluride epitaxial material according to claim 1, further comprising the step of etching the back surface of the mercury cadmium telluride epitaxial material prior to step S2.
4. The method for preparing a hall test sample of a mercury cadmium telluride epitaxial material according to claim 2, wherein after step S0, one surface of the dielectric film of the silicon wafer with the dielectric film deposited on the surface is adhered to the dielectric film on the surface of the mercury cadmium telluride epitaxial material.
5. The method for preparing the tellurium-cadmium-mercury epitaxial material hall test sample according to claim 2, which is characterized by comprising the following steps: the dielectric film material in the step S0 is selected from one of zinc sulfide, cadmium telluride or silicon oxide.
6. The method for preparing the tellurium-cadmium-mercury epitaxial material hall test sample according to claim 2, which is characterized by comprising the following steps: the etching solution adopted in the front etching treatment of the tellurium-cadmium-mercury epitaxial material is a bromomethanol solution or a bromoethanol solution.
7. The method for preparing a hall test sample of a mercury cadmium telluride epitaxial material according to claim 3, wherein the method comprises the following steps: the etching solution adopted for the back etching treatment of the tellurium-cadmium-mercury epitaxial material is selected from bromomethanol solution, bromoethanol solution or hydrobromic acid solution.
8. The method for preparing a tellurium-cadmium-mercury epitaxial material Hall test sample according to claim 4, wherein the dielectric film deposited on the surface of the silicon wafer is silicon oxide.
9. The method for preparing a hall test sample of mercury cadmium telluride epitaxial material according to claim 4 wherein the adhesion treatment is performed using molten paraffin or epoxy.
10. The method for preparing a hall test sample of a mercury cadmium telluride epitaxial material according to claim 1, wherein the specific method in step S1 is as follows: the method comprises the steps of firstly adopting a thinning machine to carry out thinning treatment on a substrate material, and then adopting corrosive liquid to completely remove the residual substrate material and the transition layer material.
CN202310174151.8A 2023-02-28 2023-02-28 Preparation method of tellurium-cadmium-mercury epitaxial material Hall test sample Pending CN116163011A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116482150A (en) * 2023-06-25 2023-07-25 浙江珏芯微电子有限公司 Tellurium-cadmium-mercury doping activation rate evaluation method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116482150A (en) * 2023-06-25 2023-07-25 浙江珏芯微电子有限公司 Tellurium-cadmium-mercury doping activation rate evaluation method
CN116482150B (en) * 2023-06-25 2023-09-12 浙江珏芯微电子有限公司 Tellurium-cadmium-mercury doping activation rate evaluation method

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