CN112993068B - Photovoltaic cell piece and preparation method thereof, and measurement method of contact resistivity - Google Patents
Photovoltaic cell piece and preparation method thereof, and measurement method of contact resistivity Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 238000000691 measurement method Methods 0.000 title abstract description 4
- 239000004065 semiconductor Substances 0.000 claims abstract description 210
- 239000000758 substrate Substances 0.000 claims abstract description 94
- 229910052751 metal Inorganic materials 0.000 claims abstract description 85
- 239000002184 metal Substances 0.000 claims abstract description 85
- 238000002161 passivation Methods 0.000 claims abstract description 72
- 230000005641 tunneling Effects 0.000 claims abstract description 43
- 238000012360 testing method Methods 0.000 claims description 141
- 238000000034 method Methods 0.000 claims description 50
- 238000005520 cutting process Methods 0.000 claims description 34
- 238000005259 measurement Methods 0.000 claims description 28
- 239000000463 material Substances 0.000 claims description 20
- 239000007772 electrode material Substances 0.000 claims description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 11
- 238000007639 printing Methods 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 9
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 6
- 238000002844 melting Methods 0.000 claims description 5
- 230000008018 melting Effects 0.000 claims description 5
- 238000005245 sintering Methods 0.000 claims description 5
- 230000005540 biological transmission Effects 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000002210 silicon-based material Substances 0.000 claims description 4
- 239000000523 sample Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 5
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 3
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- 230000000694 effects Effects 0.000 description 3
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- 238000003698 laser cutting Methods 0.000 description 1
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- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Abstract
According to the photovoltaic cell piece and the preparation method thereof and the measurement method of contact resistivity provided by the embodiment of the invention, the first passivation layer is arranged on one side of the semiconductor substrate, and the electrode layer is arranged on the other side of the semiconductor substrate; the electrode layer comprises a plurality of metal electrode wires which extend along the first direction and are arranged along the second direction, and each metal electrode wire crosses the first measuring area and the second measuring area; the tunneling oxide layer, the semiconductor layer and the second passivation layer are sequentially arranged on one side, close to the electrode layer, of the semiconductor substrate; the metal electrode wire is in contact with the semiconductor layer, and the semiconductor layer is in contact with the tunneling oxide layer; the second passivation layer comprises an opening structure, and the semiconductor layers on two sides of the opening structure are not connected with each other; the opening structure is positioned between two adjacent metal electrode wires of the first measuring area; and the doping concentration of the semiconductor layer is greater than that of the semiconductor substrate. The photovoltaic cell piece disclosed by the embodiment of the invention is simple in structure and low in preparation cost.
Description
Technical Field
The embodiment of the invention relates to the technical field of device preparation, in particular to a photovoltaic cell and a preparation method thereof, and a measurement method of contact resistivity.
Background
Solar cells are devices that directly convert light energy into electrical energy through the photoelectric effect. The formation of the corresponding passivation layer on the surface of the solar cell can improve the conversion efficiency of the solar cell, and the formation of the passivation layer on the surface of the solar cell is also an important factor for further improving the conversion efficiency of the solar cell.
Currently, the front side of a passivated contact solar cell is typically provided with a passivation layer of silicon nitride and the back side is typically provided with a passivation layer of silicon nitride, aluminum oxide or the like. Although the passivation layer is arranged in the solar cell, the recombination rate of the upper surface in a local range is reduced to a certain extent, the contact area of the metal electrode wire of the solar cell and the semiconductor layer of the solar cell still has high recombination rate. In order to reduce the recombination rate of the contact area between the metal electrode wire and the semiconductor layer, in the prior art, an ultrathin tunneling silicon oxide layer is prepared on the back of a silicon substrate which is in passivation contact with a solar cell, then a doped polycrystalline silicon layer is deposited, and a metal material is printed on the polycrystalline silicon layer to serve as an electrode, so that the purpose of improving the open-circuit voltage advantage of the solar cell is achieved.
However, in the solar cell structure of the prior art, because one more tunneling oxide layer is disposed between the silicon substrate and the polysilicon layer, the back contact resistivity of the solar cell is formed by two parts, that is, the contact resistivity between the metal cell and the polysilicon layer and the contact resistivity between the tunneling oxide layer and the polysilicon layer and the silicon substrate. Thus, when the resistivity of the solar cell is tested, the contribution of each contact film layer of the solar cell to the contact resistivity cannot be known.
Disclosure of Invention
In view of this, embodiments of the present invention provide a photovoltaic cell, a method for manufacturing the same, and a method for measuring contact resistivity, which can respectively measure the contact resistivity of each contact film layer in a solar cell, so as to obtain the contribution of each contact film layer to the resistivity.
In a first aspect, an embodiment of the present invention provides a photovoltaic cell for measuring contact resistivity, including: a first measurement zone and a second measurement zone; a plurality of cutting lines are arranged between the first measuring area and the second measuring area, in the first measuring area and in the second measuring area, and the cutting lines are arranged along a first direction and extend along a second direction; wherein the first direction intersects the second direction;
the photovoltaic cell piece further comprises:
a semiconductor substrate;
the first passivation layer is positioned on one side of the semiconductor substrate;
the electrode layer is positioned on one side, away from the first passivation layer, of the semiconductor substrate; the electrode layer comprises a plurality of metal electrode wires which extend along the first direction and are arranged along the second direction, and each metal electrode wire crosses the first measuring area and the second measuring area;
the tunneling oxide layer, the semiconductor layer and the second passivation layer are sequentially arranged on one side, close to the electrode layer, of the semiconductor substrate; the metal electrode line is in contact with the semiconductor layer, and the semiconductor layer is in contact with the tunneling oxide layer; the second passivation layer comprises an opening structure, and the semiconductor layers on two sides of the opening structure are not connected with each other; the opening structure is positioned between two adjacent metal electrode wires of the first measuring area; and the doping concentration of the semiconductor layer is greater than that of the semiconductor substrate.
Optionally, in the second direction, the value range of the width W1 of the metal electrode line is: w1 is more than or equal to 30 mu m;
in the second direction, the value range of the width W2 of the opening structure is: w2 is more than or equal to 0.9mm and less than or equal to 1.8 mm.
Optionally, in the first direction, a value range of a distance L1 between two adjacent cutting lines is 0cm < L1 ≤ 1 cm.
Optionally, in a direction perpendicular to a plane of the semiconductor substrate, a depth of the opening structure is Δ T, a thickness of the semiconductor substrate is T1, a thickness of the tunneling oxide layer is T2, a thickness of the semiconductor layer is T3, and a thickness of the second passivation layer is T4;
wherein T3+ T4 is not less than delta T < T1+ T2+ T3+ T4.
Optionally, the value range of the thickness T1 of the semiconductor substrate is T1 less than or equal to 120nm and less than or equal to 1000 nm;
the thickness T2 of the tunneling oxide layer ranges from 0nm to 2nm, wherein T2 is more than or equal to 0 nm;
the value range of the thickness T3 of the semiconductor layer is more than or equal to 30nm and less than or equal to T3 and less than or equal to 500 nm;
the value range of the thickness T4 of the second passivation layer is more than or equal to 50nm and less than or equal to T4 and less than or equal to 200 nm.
Optionally, the photovoltaic cell further includes: aligning and marking;
the alignment mark is used for aligning the forming position of the metal electrode wire when the metal electrode wire is prepared.
Optionally, the material of the first passivation layer includes silicon nitride and aluminum oxide; the material of the second passivation layer comprises silicon nitride; the material of the tunneling oxide layer comprises silicon dioxide;
the material of the semiconductor layer comprises polycrystalline silicon; the value range of the sheet resistance R of the semiconductor layer is 10 omega/sq-R < 200 omega/sq, and the value range of the doping concentration C1 of the semiconductor layer is 1018cm-3≤C1≤5×1021cm-3；
The material of the semiconductor substrate comprises a silicon material; the value range of the bulk resistivity rho of the semiconductor substrate is that rho is more than or equal to 0.3 omega cm.
In a second aspect, an embodiment of the present invention further provides a method for preparing a photovoltaic cell sheet, where the method for preparing the photovoltaic cell sheet includes:
providing a process sheet of a photovoltaic cell sheet; the process sheet includes a first measurement zone and a second measurement zone; cutting lines are arranged between the first measuring area and the second measuring area, in the first measuring area and in the second measuring area, and the cutting lines are arranged along a first direction and extend along a second direction; the process sheet further comprises a semiconductor substrate, a first passivation layer positioned on one side of a semiconductor substrate base plate, and a tunneling oxide layer, a semiconductor layer and a second passivation layer which are sequentially arranged on one side of the semiconductor substrate, which is far away from the first passivation layer; wherein the doping concentration of the semiconductor layer is greater than the doping concentration of the semiconductor substrate; the first direction intersects the second direction;
melting a preset position of the second passivation layer by using laser to form a plurality of opening structures in the first measurement region and expose the semiconductor layer;
corroding the semiconductor layer in the opening structure by adopting alkaline corrosive liquid at a preset temperature so as to ensure that the semiconductor layers on two sides of the opening structure are not connected with each other;
printing an electrode material on one side of the second passivation layer, which faces away from the semiconductor substrate, so as to form a plurality of metal electrode wires extending along the first direction and arranged along the second direction, wherein the metal electrode wires cross the first measurement area and the second measurement area; the metal electrode line is located between two adjacent opening structures, and the metal electrode line is in contact with the semiconductor layer, and the semiconductor layer is in contact with the tunneling oxide layer.
Optionally, the alkaline etching solution includes a potassium hydroxide solution, and the concentration C3 of the potassium hydroxide solution is in the range: c3 is more than or equal to 3.5 percent and less than or equal to 20 percent;
the value range of the preset temperature H is more than or equal to 70 ℃ and less than or equal to 85 ℃.
Optionally, the preparation method further comprises: melting the alignment position of the second passivation layer by adopting laser to form an alignment mark;
the printing of the electrode material on the side of the second passivation layer away from the semiconductor substrate to form a plurality of metal electrode lines extending along the first direction and arranged along the second direction includes:
the printing equipment grabs the alignment mark to print the electrode material between two adjacent opening structures;
sintering the process sheet printed with the electrode material to form the metal electrode line in contact with the semiconductor layer.
In a third aspect, an embodiment of the present invention further provides a method for measuring contact resistivity, where the method for measuring contact resistivity includes:
cutting the photovoltaic cell sheet along a cutting line of the photovoltaic cell sheet so that a plurality of first test pieces are formed in a first measuring area of the photovoltaic cell sheet, and a plurality of second test pieces are formed in a second measuring area of the photovoltaic cell sheet; the first test piece comprises an opening structure, and the semiconductor layers on two sides of the opening structure are not connected with each other; the second test piece is not provided with an opening structure;
measuring the resistivity of the first test piece and the second test piece respectively to obtain a first contact resistivity of the first test piece and a second contact resistivity of the second test piece; the first contact resistivity is the sum of the contact resistivity between a metal electrode wire of the photovoltaic cell and a semiconductor layer of the photovoltaic cell and the contact resistivity between the semiconductor layer and a tunneling oxide layer of the photovoltaic cell and a semiconductor substrate of the photovoltaic cell; the second contact resistivity is the contact resistivity between the metal electrode wire and the semiconductor layer;
and acquiring the contact resistivity between the semiconductor layer and the tunneling oxide layer and the semiconductor substrate according to the difference between the first contact resistivity and the second contact resistivity.
Optionally, the measuring the resistivity of the first test piece and the resistivity of the second test piece respectively includes:
and respectively measuring the resistivity of the first test piece and the second test piece by adopting a transmission model method.
The embodiment of the invention provides a photovoltaic cell piece, a preparation method thereof and a contact resistivity measuring method, wherein a first measuring area of the photovoltaic cell piece is provided with an opening area, a second measuring area is not provided with the opening area, so that when the photovoltaic cell piece of the first measuring area is cut into a first test piece along a cutting line of the first measuring area of the photovoltaic cell piece, and the photovoltaic cell piece of the second measuring area is cut into a second test piece along a cutting line of the second measuring area of the photovoltaic cell piece, the resistivity of the first test piece and the resistivity of the second test piece can be respectively measured, and the doping concentration of a semiconductor layer is far greater than that of a semiconductor substrate, so that the measured first resistivity of the first test piece is the sum of the resistivity between a metal electrode wire and the semiconductor layer and the resistivity between the semiconductor layer and the semiconductor substrate as well as the resistivity between the semiconductor layer and a tunneling oxide layer and the semiconductor substrate, the measured second resistivity of the second test piece is the resistivity between the metal electrode wire and the semiconductor layer, so that the resistivity between the semiconductor layer and the tunneling oxide layer and the semiconductor substrate can be calculated according to the difference between the first resistivity and the second contact resistivity, and the contribution of each contact film layer of the photovoltaic cell piece to the resistivity can be further obtained. The photovoltaic cell piece disclosed by the embodiment of the invention is simple in structure and preparation method, so that the cost can be reduced; meanwhile, when the photovoltaic cell provided by the embodiment of the invention is used for resistivity test, the test steps are simple, so that the test efficiency can be improved.
Drawings
Fig. 1 is a schematic top view of a photovoltaic cell provided in an embodiment of the present invention;
FIG. 2 is a schematic cross-sectional view taken along section A-A of FIG. 1;
FIG. 3 is a schematic cross-sectional view taken along section B-B of FIG. 1;
FIG. 4 is a schematic structural diagram of a test strip according to an embodiment of the present invention;
fig. 5 is a schematic top view of another photovoltaic cell provided by an embodiment of the present invention;
fig. 6 is a flowchart of a method for manufacturing a photovoltaic cell provided by an embodiment of the present invention;
FIG. 7 is a schematic diagram of a photovoltaic cell sheet manufacturing process corresponding to FIG. 6;
FIG. 8 is a flow chart of a method for measuring contact resistivity provided by an embodiment of the invention;
FIG. 9 is a schematic diagram of a contact resistivity distribution structure of a plurality of test strips according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not to be construed as limiting the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
The embodiment of the invention provides a photovoltaic cell piece, which can be used for testing the contact resistivity of each contact film layer in the photovoltaic cell piece. Fig. 1 is a schematic top view of a photovoltaic cell according to an embodiment of the present invention, fig. 2 is a schematic cross-sectional view taken along a-a section in fig. 1, and fig. 3 is a schematic cross-sectional view taken along a-B section in fig. 1. With combined reference to fig. 1, 2 and 3, the photovoltaic cell sheet 100 includes a first measurement region 110 and a second measurement region 120; a plurality of cutting lines 130 are arranged between the first measuring region 110 and the second measuring region 120, and in the first measuring region 110 and the second measuring region 120, and the cutting lines 130 are arranged along a first direction X and extend along a second direction Y; wherein the first direction X intersects the second direction Y. Thus, when the photovoltaic cell 100 is used to measure the contact resistivity, the photovoltaic cell 100 can be cut into a plurality of test pieces along the cutting line 130, for example, a plurality of first test pieces can be cut along the cutting line 130 of the first measurement region 110, and a plurality of second test pieces can be cut along the cutting line 130 of the second measurement region 120. Wherein, the opening structure of the first measurement region 110 can be formed by laser windowing in combination with the top view of the alkaline etching solution; meanwhile, the photovoltaic cell piece can be cut into corresponding test pieces in a laser cutting mode.
The photovoltaic cell piece 100 further comprises a semiconductor substrate 10, a first passivation layer 20 positioned on one side of the semiconductor substrate 10, and an electrode layer 30 positioned on one side of the semiconductor substrate 10, which is far away from the first passivation layer 20; the electrode layer 30 includes a plurality of metal electrode lines 31 extending along the first direction X and arranged along the second direction Y, and each metal electrode line 31 crosses the first measurement region 110 and the second measurement region 120; a tunneling oxide layer 40, a semiconductor layer 50 and a second passivation layer 60, which are sequentially disposed on one side of the semiconductor substrate 10 close to the electrode layer 30; metal electrode lines 31 are in contact with semiconductor layer 50, semiconductor layer 50 is in contact with tunneling oxide layer 40, and tunneling oxide layer 40 is in contact with semiconductor substrate 10; wherein, the second passivation layer 60 includes an opening structure 140, and the semiconductor layers 50 at two sides of the opening structure 140 are not connected to each other; the opening structure 140 is located between two adjacent metal electrode lines 31 of the first measurement region 110; and the doping concentration of the semiconductor layer 50 is greater than the doping concentration of the semiconductor substrate 10.
Specifically, ohmic contact is formed between the metal electrode line 31 and the semiconductor layer 50 of the photovoltaic cell 100, a tunneling oxide layer 40 is disposed between the semiconductor layer 50 and the semiconductor substrate 10, and the thickness of the tunneling oxide layer 40 is very thin, so that most carriers can pass through the tunneling oxide layer 40 to reach the semiconductor substrate 10, and minority carriers are blocked, so that the semiconductor layer 50 and the tunneling oxide layer 40 are combined to form a passivation structure, thereby facilitating reduction of a surface recombination rate of a contact area between the metal electrode line 31 and the semiconductor layer 50. Thus, the back contact resistivity of the photovoltaic cell 100 is composed of two parts, i.e., the first part is the contact resistivity of the metal electrode line 31 and the semiconductor layer 50, and the second part is the contact resistivity of the semiconductor layer 50 plus the tunnel oxide layer 40 and the semiconductor substrate.
For example, fig. 4 is a schematic structural diagram of a test strip provided in an embodiment of the present invention. As shown in fig. 4, in conjunction with fig. 1, 2, 3 and 4, the photovoltaic cell sheet 100 is cut into a plurality of first test patches 111 along the cutting lines 130 of the first test zones 110 of the photovoltaic cell sheet 100, and the photovoltaic cell sheet 100 is cut into a plurality of second test patches 121 along the cutting lines 130 of the second test zones 120 of the photovoltaic cell sheet 100.
When a resistivity tester is used to test the contact resistivity of the first test piece 111, the opening structure 140 is provided between two adjacent metal electrode lines 31 of the first test piece 111, and the semiconductor layers 50 on both sides of the opening structure 140 are not connected to each other, so that the current generated after the test probe of the resistivity tester is contacted with the metal electrode lines 31 can only be transmitted through the semiconductor substrate 10, that is, the current flows through the first interface between the metal electrode lines 31 and the semiconductor layer 50 and the second interface between the semiconductor layer 50 and the tunneling oxide layer 40 and the semiconductor substrate 10, and the measured contact resistivity ρ 1 of the first test piece 111 is the sum of the contact resistivity contributed by the first interface and the contact resistivity contributed by the second interface.
Because the doping concentration of the semiconductor layer 50 is greater than the doping concentration of the semiconductor substrate 10, and the region 141 between two adjacent metal electrode lines 31 in the second test strip 121 is not provided with an opening structure, that is, the semiconductor layers 50 of two adjacent metal electrode lines 31 in the second test strip 121 are connected with each other; when the doping concentration of the semiconductor layer 50 is much greater than the doping concentration of the semiconductor substrate 10, a resistivity tester is used to test the contact resistivity of the second test piece 121, and after a test probe of the resistivity tester is contacted with the metal electrode line 31, most of the generated current can only be transmitted through the semiconductor layer 50, that is, the current only flows through the first interface between the metal electrode line 31 and the semiconductor layer 50, but not through the semiconductor layer 50 and the second interface between the tunneling oxide layer 40 and the semiconductor substrate 10, and at this time, the measured contact resistivity ρ 2 of the second test piece 121 is the contact resistivity contributed by the first interface. After the contact resistivity ρ 1 of the first test piece 111 and the contact resistivity ρ 2 of the second test piece 121 are measured, the contact resistivity ρ 3 contributed by the semiconductor layer 50 and the second interface between the tunneling oxide layer 40 and the semiconductor substrate 10 can be obtained by calculating the difference between the contact resistivity ρ 1 of the first test piece 111 and the contact resistivity ρ 2 of the second test piece 121. When the resistivity of the first test piece 111 and the second test piece 121 is tested, the contact resistivity can be tested by using a transmission model method.
Wherein, the material of the first passivation layer 20 may include silicon nitride and aluminum oxide; the material of the second passivation layer 60 may include silicon nitride; tunnel oxide layer 40 may comprise silicon dioxide, and tunnel oxide layer 40 may be a dense silicon dioxide material; the material of the semiconductor layer 50 comprises polysilicon, the sheet resistance R of the semiconductor layer 50 is within a range of 10 Ω/sq to 200 Ω/sq, and the doping concentration C1 of the semiconductor layer 50 is within a range of 1018cm-3≤C1≤5×1021cm-3(ii) a The material of the semiconductor substrate 10 comprises a silicon material, the value range of the bulk resistivity ρ of the semiconductor substrate 10 is ρ ≧ 0.3 Ω · cm, and the doping concentration C2 of the semiconductor substrate 10 can be selected to be 1 × 1015cm-3I.e., the doping concentration C1 of semiconductor layer 50 is much greater than the doping of semiconductor substrate 10Concentration C2.
The photovoltaic cell piece disclosed by the embodiment of the invention is simple in structure and preparation method, so that the cost can be reduced; meanwhile, when the photovoltaic cell provided by the embodiment of the invention is used for resistivity test, the test steps are simple, so that the test efficiency can be improved.
Optionally, referring to fig. 1 and fig. 4 in combination, in the second direction Y, the value range of the width W1 of the metal electrode line 31 is: w1 is more than or equal to 30 mu m; in the second direction Y, the width W2 of the opening structure 140 has a value range of: w2 is more than or equal to 0.9mm and less than or equal to 1.8 mm.
In this way, the width W1 of the metal electrode line 31 is set to be greater than or equal to 30 μm, so that when a resistivity tester is used for testing the contact resistivity of the test piece, a test probe in the resistivity tester can test the metal electrode line 31; meanwhile, the maximum size of the metal electrode wire 31 cannot exceed the maximum size of the metal electrode wire that can be disposed in the photovoltaic cell sheet 100. The width of the opening structure 140 between two adjacent metal electrode lines 31 should be smaller than the width of the area between the metal electrode lines, and preferably the width W2 of the opening structure 140 is set to be 0.9mm ≦ W2 ≦ 1.8 mm.
Optionally, with reference to fig. 1, in the first direction X, a value range of a distance L2 between two adjacent cutting lines 130 is 0cm < L2 ≦ 1 cm. In this way, the width of the test piece obtained after cutting along the cutting line 130 of the photovoltaic cell piece 100 can meet the test requirements of the current resistivity tester, and is beneficial to testing the contact resistivity of the test piece.
Optionally, referring to fig. 1 and fig. 2, in a direction perpendicular to a plane of the semiconductor substrate 10, a depth of the opening structure 140 in the first test area 110 is Δ T, a thickness of the semiconductor substrate 10 is T1, a thickness of the tunnel oxide layer 40 is T2, a thickness of the semiconductor layer 50 is T3, and a thickness of the second passivation layer 60 is T4; wherein, T3+ T4 is not less than delta T < T1+ T2+ T3+ T4.
In this way, when the first test strip formed in the first test area 110 is used to test the contact resistivity, the current can be prevented from being transmitted through the semiconductor layer 50, and the current can be ensured to be transmitted between the two metal electrode lines 31 contacted by the test probe through the semiconductor substrate 10.
Wherein, the thickness T1 of the semiconductor substrate 10 can be in a range of T1 not more than 120nm not more than 1000 nm; the thickness T2 of tunnel oxide layer 40 may range from 0nm to T2 to 2 nm; the thickness T3 of the semiconductor layer 40 can be in a range of T3 to 500nm from 30nm to 500 nm; the thickness T4 of the second passivation layer 60 can range from 50nm to T4 to 200 nm. Due to the thin thickness of tunnel oxide layer 40, when etching semiconductor layer 50 in opening structure 140, tunnel oxide layer 40 is usually etched away together, so that the surface of semiconductor substrate 10 in opening structure 140 is exposed.
Optionally, fig. 5 is a schematic top-view structural diagram of another photovoltaic cell provided in an embodiment of the present invention. As shown in fig. 5, the photovoltaic cell 100 is further provided with an alignment mark 160; the alignment mark 160 is used for aligning the formation position of the metal electrode line 31 when the metal electrode line 31 is prepared.
For example, the metal electrode wire 31 is generally printed by using a screen printing method, and in order to set the position of the printed metal electrode wire 31 on the photovoltaic cell 100, a position mark 160 may be aligned on the photovoltaic cell 100 by using a laser. When the metal electrode wire 31 is printed subsequently, the printing equipment can acquire the setting position of the metal electrode wire 31 by grabbing the alignment mark 160, so that the production efficiency and the product yield can be improved. The alignment mark can be arranged at four corner positions of the rectangular photovoltaic cell piece 100, so that the printing of the metal electrode wire 31 in the photovoltaic cell piece 100 is not affected on the premise of ensuring alignment.
The embodiment of the invention also provides a preparation method of the photovoltaic cell piece, which is used for preparing the photovoltaic cell piece provided by the embodiment of the invention and can be used for measuring the contact resistivity. Fig. 6 is a flowchart of a method for manufacturing a photovoltaic cell provided in an embodiment of the present invention, and fig. 7 is a schematic structural diagram of a photovoltaic cell manufacturing process corresponding to fig. 6. With reference to fig. 1, fig. 6, and fig. 7, a method for manufacturing a photovoltaic cell provided by an embodiment of the present invention includes:
s610, providing a process sheet of a photovoltaic cell sheet; the process sheet includes a first measurement zone and a second measurement zone; cutting lines are arranged between the first measuring area and the second measuring area, in the first measuring area and in the second measuring area, and the cutting lines are arranged along a first direction and extend along a second direction; the process sheet further comprises a semiconductor substrate, a first passivation layer positioned on one side of a semiconductor substrate base plate, and a tunneling oxide layer, a semiconductor layer and a second passivation layer which are sequentially arranged on one side of the semiconductor substrate, which is far away from the first passivation layer; wherein the doping concentration of the semiconductor layer is greater than the doping concentration of the semiconductor substrate; the first direction intersects the second direction.
Illustratively, a process sheet of the photovoltaic cell sheet 100 is taken from a production line of the photovoltaic cell sheet 100, and passivation layers are formed on both the front and back surfaces of the process sheet of the photovoltaic cell sheet 100, that is, the process sheet may include a semiconductor substrate 10, a first passivation layer 20 on a side of the semiconductor substrate 10, and a tunnel oxide layer 40, a semiconductor layer 50 and a second passivation layer 60 sequentially disposed on a side of the semiconductor substrate away from the first passivation layer 20. Therefore, a special sample preparation process is not required, and the preparation steps of the photovoltaic cell 100 can be simplified, thereby being beneficial to reducing the preparation cost of the photovoltaic cell 100. The material of the semiconductor layer 50 in the process sheet may be polysilicon, the thickness of the semiconductor layer 50 may be 200nm, the sheet resistance of the semiconductor layer 50 may be 30 Ω/sq, and the doping concentration at the side of the semiconductor layer 50 is about 1020cm-3(ii) a The material of the semiconductor substrate 10 may be a silicon material, the thickness of the semiconductor substrate 10 may be 180um, the bulk resistivity of the semiconductor substrate 10 may be 2 Ω · cm, and the doping concentration of the semiconductor substrate 10 is about 1015cm-3(ii) a The first passivation layer 20 may include a silicon nitride film and an aluminum oxide film, wherein the silicon nitride film may have a thickness of 50nm to 200nm, and the aluminum oxide film should have a thickness of not more than 5 nm; the material of the second passivation layer 60 may include silicon nitride, and the thickness of the second passivation layer may be 40 to 100 nm; the thickness of tunnel oxide layer 40 may be 1.2nm, that is, the thickness of tunnel oxide layer 40 is very thin; the process piece can be a rectangular process piece, the rectangular processThe dimensions of the sheet may be 156mm by 156 mm.
And S620, melting the preset position of the second passivation layer by using laser to form a plurality of opening structures in the first measurement region and expose the semiconductor layer.
Illustratively, the predetermined position of the second passivation layer 60 is melted using a laser having a wavelength of 523 nm. The energy of the laser with the wavelength of 523nm is low, and when the laser passes through the preset position of the second passivation layer, it can be ensured that the opening structure is formed only at the preset position of the second passivation layer 60, and the semiconductor substrate 10 sent by the second passivation layer 60 is not damaged. Wherein, in the second direction, the width of the opening structure 140 of the first test region 110 of the second passivation layer 60 may be 1.4mm, and the width between two adjacent opening structures 140 may be greater than 30 μm; in the first direction, the length of the opening structure 140 may be half the length of the process piece, for example, when the length of the process piece is 156mm, the length of the opening structure 140 may be 78 mm.
In addition, while the opening structure 140 is formed in the first test region 110 of the second passivation layer 60, the alignment position of the second passivation layer 60 may be melted by using laser to align the mark, and the alignment mark may play a role in aligning when the metal electrode line is printed. The alignment marks can be arranged at four corners of the rectangular process sheet.
And S630, corroding the semiconductor layer in the opening structure by adopting alkaline corrosive liquid at a preset temperature so as to ensure that the semiconductor layers on two sides of the opening structure are not connected with each other.
Illustratively, the process piece after the opening of the second passivation layer 60 is soaked in an alkaline etchant, which may be a KOH solution, and the mass concentration of the alkaline etchant, C3, may range from 3.5% to C3% to 20%. Since the high-concentration alkaline etchant has an etching effect only on the exposed semiconductor layer 50, and does not corrode the second passivation layer 60, the semiconductor layer 50 in the opening structure 140 is corroded by the alkaline etchant; meanwhile, tunnel oxide layer 40 is also etched away in opening structure 140 due to the thin thickness of tunnel oxide layer 40. To ensure that the alkaline etchant completely etches the semiconductor layer 50 within the opening structure 140 without etching the semiconductor substrate 10, the process piece can be immersed for 10s to 200s at a predetermined temperature of 70 ℃ to 85 ℃.
S640, printing an electrode material on one side, away from the semiconductor substrate, of the second passivation layer to form a plurality of metal electrode lines extending along a first direction and arranged along a second direction, wherein the metal electrode lines cross the first measurement area and the second measurement area; and the metal electrode wire is positioned between two adjacent opening structures, is in contact with the semiconductor layer, and is in contact with the tunneling oxide layer.
For example, when the alignment mark is provided at the alignment mark of the process sheet, the alignment mark may be grasped by a printing apparatus to print the electrode material between two adjacent opening structures 140; then sintering the process sheet printed with the electrode material; since the electrode material is usually a metallic silver material with a small amount of lead attached, the lead material corrodes the second passivation layer 60 during the sintering process, and thus the metal electrode line 31 formed after sintering contacts the semiconductor layer 50. Wherein, in the second direction Y, the width of the formed metal electrode line 31 should be greater than 30 μm.
Therefore, the photovoltaic cell piece used for testing the contact resistivity is formed by adopting the process piece of the photovoltaic cell piece, so that a special sample preparation flow is not needed, the preparation steps of the photovoltaic cell piece can be simplified, and the preparation cost of the photovoltaic cell piece is reduced; meanwhile, when the photovoltaic cell is prepared, the opening structure of the second passivation layer is formed by adopting low-energy laser, and the semiconductor layer in the opening structure is overlooked by adopting alkaline corrosive liquid, compared with a plasma etching mode adopted in the prior art, the preparation cost of the embodiment of the invention is low, and the operation is simple; in addition, a metal electrode wire is printed between two adjacent opening structures, a special electrode for testing contact resistivity is not required to be prepared, and the test on the contact resistivity can be realized after subsequent cutting, so that the process steps can be further simplified, and the preparation cost can be reduced; the prepared photovoltaic cell piece can be used for representing the contact resistivity of the process piece in a production line, so that the production efficiency and the product yield are improved.
The embodiment of the invention also provides a method for measuring the contact resistivity, and the photovoltaic cell provided by the embodiment of the invention is adopted to measure the contact resistivity. Fig. 8 is a flowchart of a method for measuring contact resistivity according to an embodiment of the present invention. As shown in fig. 8, the method for measuring contact resistivity includes:
s810, cutting the photovoltaic cell sheet along a cutting line of the photovoltaic cell sheet so as to enable a plurality of first test pieces to be formed in a first measuring area of the photovoltaic cell sheet and a plurality of second test pieces to be formed in a second measuring area of the photovoltaic cell sheet; the first test piece comprises an opening structure, and the semiconductor layers on two sides of the opening structure are not connected with each other; the second test piece is not provided with an opening structure.
Specifically, cutting lines are arranged in a first measuring area and a second measuring area on the photovoltaic cell piece and between the first measuring area and the second measuring area, and the photovoltaic cell piece can be cut into long strips by adopting a high-power laser along the cutting lines of the photovoltaic cell piece, so that a first testing piece and a second testing piece for testing contact resistivity are formed. Wherein, the width of the first test piece and the second test piece should be less than 1cm so as to meet the test requirement of the current resistivity tester.
S820, measuring the resistivity of the first test piece and the resistivity of the second test piece respectively to obtain a first contact resistivity of the first test piece and a second contact resistivity of the second test piece; the first contact resistivity is the sum of the contact resistivity between a metal electrode wire of the photovoltaic cell and a semiconductor layer of the photovoltaic cell and the contact resistivity between the semiconductor layer and a tunneling oxide layer of the photovoltaic cell and a semiconductor substrate of the photovoltaic cell; the second contact resistivity is a contact resistivity between the metal electrode line and the semiconductor layer.
Specifically, the resistivity of the first test piece and the resistivity of the second test piece are respectively measured by a resistivity tester. As shown in fig. 4, the first test strip 111 has ten metal electrode lines 311, and the second test strip 121 also has ten metal electrode lines 312, so that the resistivity of the first test strip 111 and the resistivity of the second test strip 121 can be measured by a transmission model method.
For example, when the first test piece 111 is tested for the contact resistivity, one test probe of the resistivity tester may be brought into contact with the metal electrode line 3110 of the first test piece 111, and the other test probe may be brought into contact with the metal electrode lines 3111, 3112, 3113, 3114, 3115, 3116, 3117, 3118 and 3119 of the first test piece 111 in sequence to measure a plurality of contact resistivities, and the first contact resistivity ρ 1 of the first test piece 111 may be obtained by calculation. The semiconductor layers on two sides of the opening structure of the first test piece 111 are not connected, so that the measured first contact resistivity ρ 1 is the sum of the contact resistivity between the metal electrode wire of the photovoltaic cell and the semiconductor layer of the photovoltaic cell and the contact resistivity between the semiconductor layer and the tunneling oxide layer of the photovoltaic cell and the semiconductor substrate of the photovoltaic cell.
When the second test strip 121 is tested for contact resistivity, one test probe of the resistivity tester may be brought into contact with the metal electrode line 3120 of the second test strip 121, and the other test probe may be brought into contact with the metal electrode lines 3121, 3122, 3123, 3124, 3125, 3126, 3127, 3128, and 3129 of the second test strip 121 in sequence, thereby measuring a plurality of contact resistivities, and the second contact resistivity ρ 2 of the second test strip 121 may be obtained through calculation. Since the second test strip 121 is not provided with an opening structure and the doping concentration of the semiconductor layer is much greater than that of the semiconductor substrate, most of the current can be transmitted between the two test probes through the semiconductor layer, and the current transmitted in the semiconductor substrate is negligible. At this time, the measured second contact resistivity ρ 2 is a contact resistivity between the metal electrode line of the photovoltaic cell sheet and the semiconductor layer of the photovoltaic cell sheet.
Because the first test zone and the second test zone of photovoltaic cell piece all are provided with a plurality of line of cut, consequently can obtain a plurality of first test pieces and a plurality of second test piece after cutting along the line of cut, for the test accuracy who improves contact resistivity. The contact resistivity of the plurality of first test strips and the plurality of second test strips may be measured separately.
For example, fig. 9 is a schematic diagram of a contact resistivity distribution structure of a plurality of test strips according to an embodiment of the present invention. As shown in fig. 9, the contact resistivity of the plurality of first test strips 111 is distributed in a first range, and the contact resistivity of the plurality of second test strips 121 is distributed in a second range. In this manner, the first contact resistivity ρ 1 of the first test piece 111 can be defined as the middle value of the contact resistivities of the plurality of first test pieces 111, and the first contact resistivity ρ 1 can be, for example, 4.55m Ω · cm2(ii) a And the second contact resistivity ρ 2 of the second test piece 121 is defined as the middle value of the contact resistivity of the plurality of second test pieces 121, for example, the second contact resistivity ρ 12 is 3.32m Ω · cm2。
And S830, acquiring the contact resistivity between the semiconductor layer and the tunneling oxide layer and the semiconductor substrate according to the difference between the first contact resistivity and the second contact resistivity.
Specifically, after obtaining the first contact resistivity ρ 1 of the first test piece and the second contact resistivity ρ 2 of the second test piece 121, the contact resistivity between the semiconductor layer and the tunneling oxide layer and the semiconductor substrate can be obtained by calculating the difference between the first contact resistivity ρ 1 and the second contact resistivity ρ 2. For example, when the first contact resistivity ρ 1 is 4.55m Ω · cm2And a second contact resistivity rho 12 of 3.32m omega cm2The contact resistivity between the semiconductor layer and the tunneling oxide layer and the semiconductor substrate is 1.23m Ω · cm2。
In this way, the contact resistivity between the semiconductor layer and the tunnel oxide layer and the semiconductor substrate can be obtained by testing the contact resistivity of the first test piece and the second test piece respectively, and the contact resistivity is influenced by the thickness and compactness of the tunnel oxide layer, so the contact resistivity is an important parameter for characterizing the performance of the tunnel oxide layer. The smaller the contact resistivity between the semiconductor layer and the tunneling oxide layer and the semiconductor substrate is, the more beneficial the passivation contact is, and the smaller the string resistance of the photovoltaic cell is. The method for testing the contact resistivity provided by the embodiment of the invention is simple and convenient to operate, and the photovoltaic cell provided by the embodiment of the invention has higher test effect and test accuracy when being used for testing the contact resistivity.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. Those skilled in the art will appreciate that the present invention is not limited to the particular embodiments described herein, and that various obvious changes, rearrangements and substitutions will now be apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims (12)
1. A photovoltaic cell for measuring contact resistivity, comprising: a first measurement zone and a second measurement zone; a plurality of cutting lines are arranged between the first measuring area and the second measuring area, in the first measuring area and in the second measuring area, and the cutting lines are arranged along a first direction and extend along a second direction; wherein the first direction intersects the second direction;
the photovoltaic cell piece further comprises:
a semiconductor substrate;
a first passivation layer on one side of the semiconductor substrate;
the electrode layer is positioned on one side, away from the first passivation layer, of the semiconductor substrate; the electrode layer comprises a plurality of metal electrode wires which extend along the first direction and are arranged along the second direction, and each metal electrode wire crosses the first measuring area and the second measuring area;
the tunneling oxide layer, the semiconductor layer and the second passivation layer are sequentially arranged on one side, close to the electrode layer, of the semiconductor substrate; the metal electrode line is in contact with the semiconductor layer, and the semiconductor layer is in contact with the tunneling oxide layer; the second passivation layer comprises an opening structure, and the semiconductor layers on two sides of the opening structure are not connected with each other; the opening structure is positioned between two adjacent metal electrode wires of the first measuring area; and the doping concentration of the semiconductor layer is greater than that of the semiconductor substrate.
2. The photovoltaic cell sheet according to claim 1, wherein in the second direction, the width W1 of the metal electrode wire has a value in a range of: w1 is more than or equal to 30 mu m;
in the second direction, the width W2 of the opening structure has a value range of: w2 is more than or equal to 0.9mm and less than or equal to 1.8 mm.
3. The photovoltaic cell sheet according to claim 1, wherein the distance L1 between two adjacent cutting lines in the first direction is in a range of 0cm < L1 ≦ 1 cm.
4. The photovoltaic cell of claim 1, wherein, in a direction perpendicular to a plane of the semiconductor substrate, the opening structure has a depth Δ T, the semiconductor substrate has a thickness T1, the tunneling oxide layer has a thickness T2, the semiconductor layer has a thickness T3, and the second passivation layer has a thickness T4;
wherein, T3+ T4 is not less than delta T < T1+ T2+ T3+ T4.
5. The photovoltaic cell sheet according to claim 4,
the value range of the thickness T1 of the semiconductor substrate is more than or equal to 120nm and less than or equal to T1 and less than or equal to 1000 nm;
the thickness T2 of the tunneling oxide layer is in a value range of 0nm to T2 to 2 nm;
the value range of the thickness T3 of the semiconductor layer is more than or equal to 30nm and less than or equal to T3 and less than or equal to 500 nm;
the value range of the thickness T4 of the second passivation layer is more than or equal to 50nm and less than or equal to T4 and less than or equal to 200 nm.
6. The photovoltaic cell sheet according to any one of claims 1 to 5, further comprising: aligning and marking;
the alignment mark is used for aligning the forming position of the metal electrode wire when the metal electrode wire is prepared.
7. The photovoltaic cell sheet according to any one of claims 1-5, wherein the material of the first passivation layer comprises silicon nitride and aluminum oxide; the material of the second passivation layer comprises silicon nitride; the material of the tunneling oxide layer comprises silicon dioxide;
the material of the semiconductor layer comprises polycrystalline silicon; the value range of the sheet resistance R of the semiconductor layer is 10 omega/sq-R < 200 omega/sq, and the value range of the doping concentration C1 of the semiconductor layer is 1018cm-3≤C1≤5×1021cm-3；
The material of the semiconductor substrate comprises a silicon material; the value range of the bulk resistivity rho of the semiconductor substrate is that rho is more than or equal to 0.3 omega cm.
8. A preparation method of a photovoltaic cell for preparing the photovoltaic cell of any one of claims 1 to 7, comprising:
providing a process sheet of a photovoltaic cell sheet; the process sheet includes a first measurement zone and a second measurement zone; cutting lines are arranged between the first measuring area and the second measuring area, in the first measuring area and in the second measuring area, and the cutting lines are arranged along a first direction and extend along a second direction; the process sheet further comprises a semiconductor substrate, a first passivation layer positioned on one side of a semiconductor substrate base plate, and a tunneling oxide layer, a semiconductor layer and a second passivation layer which are sequentially arranged on one side of the semiconductor substrate, which is far away from the first passivation layer; wherein the doping concentration of the semiconductor layer is greater than the doping concentration of the semiconductor substrate; the first direction intersects the second direction;
melting preset positions of the second passivation layer by using laser to form a plurality of opening structures in the first measurement area and expose the semiconductor layer;
corroding the semiconductor layer in the opening structure by adopting alkaline corrosive liquid at a preset temperature so as to ensure that the semiconductor layers on two sides of the opening structure are not connected with each other;
printing an electrode material on one side of the second passivation layer, which faces away from the semiconductor substrate, so as to form a plurality of metal electrode wires extending along the first direction and arranged along the second direction, wherein the metal electrode wires cross the first measurement area and the second measurement area; the metal electrode line is located between two adjacent opening structures, and the metal electrode line is in contact with the semiconductor layer, and the semiconductor layer is in contact with the tunneling oxide layer.
9. The preparation method of claim 8, wherein the alkaline etching solution comprises a potassium hydroxide solution, and the concentration C3 of the potassium hydroxide solution is in the range of: c3 is more than or equal to 3.5 percent and less than or equal to 20 percent;
the value range of the preset temperature H is more than or equal to 70 ℃ and less than or equal to 85 ℃.
10. The method of manufacturing according to claim 8, further comprising:
melting the alignment position of the second passivation layer by using laser to form an alignment mark;
the printing of the electrode material on the side of the second passivation layer away from the semiconductor substrate to form a plurality of metal electrode lines extending along the first direction and arranged along the second direction includes:
the printing equipment grabs the alignment mark to print the electrode material between two adjacent opening structures;
sintering the process sheet printed with the electrode material to form the metal electrode line in contact with the semiconductor layer.
11. A method for measuring contact resistivity by using the photovoltaic cell of any one of claims 1 to 7, comprising:
cutting the photovoltaic cell piece along a cutting line of the photovoltaic cell piece so that a plurality of first test pieces are formed in a first measuring area of the photovoltaic cell piece, and a plurality of second test pieces are formed in a second measuring area of the photovoltaic cell piece; the first test piece comprises an opening structure, and the semiconductor layers on two sides of the opening structure are not connected with each other; the second test piece is not provided with an opening structure;
measuring the resistivity of the first test piece and the second test piece respectively to obtain a first contact resistivity of the first test piece and a second contact resistivity of the second test piece; the first contact resistivity is the sum of the contact resistivity between a metal electrode wire of the photovoltaic cell and a semiconductor layer of the photovoltaic cell and the contact resistivity between the semiconductor layer and a tunneling oxide layer of the photovoltaic cell and a semiconductor substrate of the photovoltaic cell; the second contact resistivity is the contact resistivity between the metal electrode wire and the semiconductor layer;
and acquiring the contact resistivity between the semiconductor layer and the tunneling oxide layer and the semiconductor substrate according to the difference between the first contact resistivity and the second contact resistivity.
12. The method of measurement according to claim 11, wherein measuring the resistivity of the first test strip and the second test strip, respectively, comprises:
and respectively measuring the resistivity of the first test piece and the second test piece by adopting a transmission model method.
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| CN106531816A (en) * | 2016-12-30 | 2017-03-22 | 中国科学院微电子研究所 | Back-junction back-contact solar cell |
| CN206864484U (en) * | 2017-07-12 | 2018-01-09 | 泰州中来光电科技有限公司 | One kind passivation contact solar cell |
| CN109713065A (en) * | 2018-12-28 | 2019-05-03 | 泰州中来光电科技有限公司 | A kind of passivation solar battery of type metal electrode and preparation method thereof |
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| CN106531816A (en) * | 2016-12-30 | 2017-03-22 | 中国科学院微电子研究所 | Back-junction back-contact solar cell |
| CN206864484U (en) * | 2017-07-12 | 2018-01-09 | 泰州中来光电科技有限公司 | One kind passivation contact solar cell |
| CN109713065A (en) * | 2018-12-28 | 2019-05-03 | 泰州中来光电科技有限公司 | A kind of passivation solar battery of type metal electrode and preparation method thereof |
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