CN106653912A - Grid line-free full-back contact solar cell module - Google Patents
Grid line-free full-back contact solar cell module Download PDFInfo
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- CN106653912A CN106653912A CN201710047512.7A CN201710047512A CN106653912A CN 106653912 A CN106653912 A CN 106653912A CN 201710047512 A CN201710047512 A CN 201710047512A CN 106653912 A CN106653912 A CN 106653912A
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 99
- 229910052802 copper Inorganic materials 0.000 claims abstract description 83
- 239000010949 copper Substances 0.000 claims abstract description 83
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 38
- 238000002161 passivation Methods 0.000 claims abstract description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 25
- 239000010703 silicon Substances 0.000 claims abstract description 25
- 238000005520 cutting process Methods 0.000 claims abstract description 8
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- 239000011159 matrix material Substances 0.000 claims description 14
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- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims description 2
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 2
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- OLXNZDBHNLWCNK-UHFFFAOYSA-N [Pb].[Sn].[Ag] Chemical compound [Pb].[Sn].[Ag] OLXNZDBHNLWCNK-UHFFFAOYSA-N 0.000 claims description 2
- 238000005275 alloying Methods 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 239000002923 metal particle Substances 0.000 claims description 2
- 239000005011 phenolic resin Substances 0.000 claims description 2
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- 229910000679 solder Inorganic materials 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 40
- 229910004205 SiNX Inorganic materials 0.000 description 21
- 229910052681 coesite Inorganic materials 0.000 description 21
- 229910052906 cristobalite Inorganic materials 0.000 description 21
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 11
- 229910052593 corundum Inorganic materials 0.000 description 11
- 229910001845 yogo sapphire Inorganic materials 0.000 description 11
- 230000005611 electricity Effects 0.000 description 9
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 7
- 239000004332 silver Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000003475 lamination Methods 0.000 description 6
- 230000008859 change Effects 0.000 description 5
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- 238000010276 construction Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
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- 238000003698 laser cutting Methods 0.000 description 1
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a grid line-free full-back contact solar cell module. The grid line-free full-back contact solar cell module comprises a plurality of back-contact solar small battery pieces which are connected in series, wherein the small battery pieces are obtained through cutting a back-contact solar battery piece; the back-contact solar battery piece comprises an n-type silicon substrate; a p+ doping area and an n+ doping area are arranged on the back of the n-type silicon substrate; a back passivation layer is arranged on the p+ doping area and the n+ doping area; a positive electrode contact part and a negative electrode contact part are arranged on the back passivation layer; soldering tin or conducting adhesive covers on the positive electrode contact parts and the negative electrode contact parts; when two adjacent small battery pieces are connected in series, a copper wire is arranged on the soldering tin or the conducting adhesive of the positive electrode contact part and a copper wire is arranged on the soldering tin or the conducting adhesive of the negative electrode contact part; and every two adjacent battery pieces are directly connected in series through the copper wires, or every two adjacent small battery pieces are connected in series through the copper wires or solder strips. The cell module not only ca enhance the reliability of the full-back contact battery module, but also can reduce the process difficulty and manufacturing cost of the full-back contact battery module.
Description
Technical field
The invention belongs to area of solar cell, and in particular to one kind is without the full back contact solar cell component of grid line.
Background technology
Solar cell is a kind of semiconductor devices for converting light energy into electric energy, relatively low production cost and higher energy
Amount transformation efficiency is always the target of solar cell industry pursuit.For current conventional solar cell, its positive electrode contact
Electrode and negative electrode contact electrode are respectively positioned at the tow sides of cell piece.The front of battery be sensitive surface, front metal positive electricity
The covering of pole contact electrode will cause the sunshine of a part of incidence to be reflected by metal electrode, cause a part of optics to damage
Lose.7% or so, the front for reducing metal electrode covers the area coverage of the front metal electrode of common crystal silicon solar batteries
The energy conversion efficiency of the battery that can directly improve.
Full back contact solar cell is that a kind of that positive electrode and negative electrode contact electrode are both placed in into cell backside is (non-to receive
Light face) battery, the sensitive surface of the battery is blocked without any metal electrode, so as to effectively increase the short circuit current of cell piece,
The energy conversion efficiency for making cell piece is improved.
The solar cell of full back contact structure is at present can energy in the crystal silicon solar batteries of industrialized mass production
A kind of battery of transformation efficiency highest, its high transformation efficiency, low component package cost is deep always to be favored by people.
In conventional full back contact solar cell manufacture craft, its metallization process is mostly using the complex plating of flow process come real
Existing, the method is reducing the series resistance of back contact battery, and improve the open-circuit voltage of battery has outstanding performance really, but should
Method complex process, the discarded object serious environment pollution of discharge, and with the main flow metal of current industrialized production solar cell
Change method is not compatible, therefore larger for the Industry Promotion difficulty of low cost.
If carrying out the metallization of back contact battery using conventional main gate line using the screen printing technique of current main flow
Two subject matters faced during design are：(1) between main gate line and the thin grid line of opposite electrode and main gate line and opposite electrode
Insulation between corresponding doped region；(2) because full back contact battery electric current is significantly higher than conventional batteries, in order to reduce main grid
The power attenuation that line resistance on line and thin grid line is caused needs to adopt wider grid line, more slurry consumptions to bring cost
Steeply rise.
One kind is solved between main gate line and the thin grid line of opposite electrode and main gate line and the corresponding doping of opposite electrode
The method of the insulation between region is that insulating barrier slurry, only positive-electrode fine are printed in the corresponding region of positive electrode main grid on silicon chip
Grid line and peripheral part p+ regions are not blocked.Likewise, insulating barrier slurry is printed in the corresponding region of negative electrode main grid, only
The superfine grid line of negative electricity and peripheral part n+ regions are not blocked.Patent CN103762253A disclose this battery production method and
Structure.But the method for this printing insulation paste there must be enough thickness, otherwise it is easy to generation tip and punctures.In addition by
High-temperature process is cannot pass through after the printing of this insulation paste, existing sintering process is incompatible with its.More than shortcoming and
The expensive price of insulation paste causes the method for printing insulating barrier slurry not adopted on a large scale.
Another kind of method is solved between main gate line and the thin grid line of opposite electrode and main gate line and opposite electrode is corresponding mixes
Insulation between miscellaneous region is that positive and negative electrode is designed using rich font, and the superfine grid line of negative electricity avoids positive electrode main gate line, positive electrode
Thin grid line avoids negative electrode main gate line.Where so the X-Y scheme of positive and negative electrode does not interlock, reverse leakage can be solved
Problem.Patent US20110041908A1 discloses this battery production method and structure.But the drawbacks of this method be by
It is difficult to be collected by negative electrode in the corresponding electronics in relation positive electrode main grid position of lateral transport distance, negative electrode main grid position pair
The hole answered is difficult to be collected by positive electrode.Thus, the fill factor, curve factor and electricity conversion that cause battery are a greater impact.
The content of the invention
It is an object of the invention to provide one kind is without the full back contact solar cell component of grid line, the battery component both can be with
Lifting the reliability of full back contact battery component can reduce its technology difficulty and manufacturing cost again.
The above-mentioned purpose of the present invention is achieved through the following technical solutions：It is a kind of electric without the full back contact solar of grid line
Pond component, including the back contact solar baby battery piece of multiple phases series winding, the back contact solar baby battery piece is by back contacts
Solar battery sheet cutting is formed, and the back contact solar cell piece includes n-type silicon matrix, the back side of the n-type silicon matrix
The p+ doped regions and n+ doped regions for being parallel to each other and being alternately arranged is provided with, is set on the p+ doped regions and n+ doped regions
There is backside passivation layer, the backside passivation layer is provided with positive electrode contact site and negative electrode contact site, wherein positive electrode contact site
Contact on the p+ doped regions correspondence position and with the p+ doped regions, the negative electrode contact site is in described
Contact on n+ doped region correspondence positions and with the n+ doped regions, the positive electrode contact site and the negative electrode are contacted
Scolding tin or conducting resinl are coated with portion, the back contact solar cell piece is along perpendicular to the p+ doped regions and n+ doped regions
The long side direction in domain cuts into some back contact solar baby battery pieces, when adjacent two baby batteries piece is mutually contacted, the positive electrode
Copper cash is provided with the scolding tin or conducting resinl of contact site, on the scolding tin or conducting resinl of the negative electrode contact site copper is also equipped with
Line, adjacent two baby batteries piece is directly mutually contacted by copper cash, or adjacent two baby batteries piece is mutually contacted by copper cash with welding.
The conventional full back contacts sun is thoroughly solved in the present invention without the full back contact solar cell modular construction of grid line
The problem that can insulate between battery main gate line and matrix, it is to avoid the long-term reliability of component is ensure that using insulation paste；Electricity
Grid line is not provided with pond so as to eliminate the expensive silver paste cost of main gate line and thin grid line；Simultaneously because cut multiple electricity
Pool unit, reduces the electric current of every a string of cell pieces group string, so as to reduce the impact of resistance loss on copper wire, therefore can adopt
With the both positive and negative polarity contact point on thinner copper cash connection battery unit, it is ensured that the fill factor, curve factor of component.
A kind of preferred embodiment in as the present invention, when adjacent two baby batteries piece is mutually contacted, will a wherein baby battery
Piece rotates 180 ° and obtains adjacent baby battery pieces, wherein the polarity phase of the electrode contact of a baby battery piece and adjacent baby battery piece
Anti- electrode contact flush, directly adopts copper cash by the electrode of a wherein baby battery piece when adjacent two baby batteries piece is mutually contacted
Scolding tin or conducting resinl on contact site and the welding or conducting resinl phase on the opposite polarity electrode contact of adjacent baby battery piece
Connection, forms series winding cell piece.
When i.e. adjacent two cell piece is contacted, the back contact solar baby battery back side can upward be placed, adjacent solar energy
Baby battery rotates 180 ° and finely tunes cell piece in the position of copper cash or so so that the opposite electrode of adjacent cell piece aligns, most
It is well on same straight line, then the copper wire that many stretch to be placed on scolding tin or conducting resinl, by way of heating
So that copper cash is solidificated on scolding tin or conducting resinl so as to the electrode with battery is connected.
As the present invention one kind preferred embodiment, the parallel setting of many copper cash and can connect simultaneously in the present invention
The both positive and negative polarity contact site of adjacent two baby batteries piece is cascaded these baby battery pieces, then again by unnecessary copper cash excision with
Ensure that these baby battery pieces form the circuit of series connection afterwards, become a group string of solar module.
Another kind of preferred embodiment in as the present invention, when adjacent two baby batteries piece is mutually contacted, adjacent two baby battery
Chip architecture identical (need not overturn 180 °), wherein the electrode contact of a baby battery piece is identical with the polarity of adjacent baby battery piece
Electrode contact flush, the copper cash on the positive electrode contact site is right with the copper cash two ends on the negative electrode contact site
Together, with jag and shortening end the jag of the copper cash on adjacent two baby batteries piece is connected using welding respectively, is formed
Series winding cell piece.
When i.e. adjacent two cell piece is contacted, structure identical back contact solar baby battery is disposed adjacent, without the need for rotation,
But the copper cash on the copper cash on positive electrode contact site and negative electrode contact site is not lined up for arranged in parallel and two ends, is had respectively
There is jag and shorten end, the copper cash on adjacent two baby batteries piece does not also contact with each other, when adjacent two cell piece is mutually contacted, adopts
The jag of the copper cash on adjacent two baby batteries piece is connected with welding, forms series winding cell piece.
Meanwhile, welding does not contact with the shortening end of the copper cash on adjacent two baby batteries piece.
As the present invention one kind preferred embodiment, the parallel setting of many copper cash and while connection two in the present invention
Adjacent solar energy baby battery piece, then, by unnecessary copper cash excision, contacts the positive and negative electrode on same baby battery piece by again
Copper cash in portion is arranged in parallel and two ends do not line up, and has jag in both sides respectively and shortens end, by adjacent two battery
When piece is mutually contacted, the jag of the copper cash on adjacent two baby batteries piece is connected (such as by the positive electricity of baby battery piece using welding
Copper cash jag on the contact site of pole is connected or by little electricity with the copper cash jag on the negative electrode contact site of adjacent cell piece
Copper cash jag on the negative electrode contact site of pond piece is connected with the copper cash jag on the positive electrode contact site of adjacent cell piece
Connect), form series winding cell piece.Meanwhile, welding does not contact with the shortening end of the copper cash on adjacent two baby batteries piece.
By arranging scolding tin or conducting resinl on positive and negative electrode contact site, and using copper cash or copper cash and welding connection scolding tin
Or conduction band glue, any main gate line and thin grid line can be not provided with back contact solar baby battery piece, all of electric current is all from just
Negative electrode contact site is pooled on copper cash through scolding tin or conducting resinl.
As a modification of the present invention：Copper cash and the negative electricity on the scolding tin or conducting resinl of the positive electrode contact site
The parallel setting of copper cash on the scolding tin or conducting resinl of pole contact site, and the copper cash is along the p+ doped regions and the n+
The long side direction of doped region is arranged.
So design, be easy to make copper cash with the doped region of neighboring area opposite polarity and on these doped regions
The electrode contact of opposite polarity keep at a distance, so as to avoid the generation of electric leakage.
Main gate line and thin grid line are substituted come collected current by copper cash, and copper cash adulterates along p+ doped regions or n+
The long side direction in region, it is to avoid that what is brought when conventional back contact battery main gate line is across p+ doped regions and n+ doped regions is exhausted
Edge hardly possible problem.
The present invention does not make special restriction for the shape of copper cash, but the copper cash section is preferably circular or ellipse
Shape, wherein the sectional area of single copper cash is preferably 100～9000 μm2。
The present invention does not make special restriction, but the shape of the positive electrode contact site for the shape of positive and negative electrode contact site
Point-like or wire can be preferably, the area of wherein a single point or single hop line is preferably 100～9000 μm2, adjacent 2 points or phase
Spacing between adjacent two sections of lines is preferably 30～2000 μm.
Scolding tin of the present invention or conducting resinl all cover the positive electrode contact using serigraphy or mode for dispensing glue
Portion and the negative electrode contact site, and partially or fully cover the p+ doped regions and n+ doped regions, the scolding tin or lead
Electric glue is shaped as strip, and the scolding tin or conducting resinl be 30 in the size of p+ doped regions and n+ doped region short side directions
～1500 μm, and less than the p+ doped regions and the size of n+ doped region minor faces.
Back contact solar baby battery piece of the present invention is formed by the cutting of back contact solar cell piece, the back of the body after cutting
Contact solar baby battery piece is similar to that full back contact battery (IBC), and difference is that this back contact solar is little
Cell piece does not have any grid line, only both positive and negative polarity contact site.Because the scolding tin or conducting resinl size on positive and negative electrode contact site
More than the size of positive and negative electrode contact site, the contraposition of scolding tin or conducting resinl and copper cash and not shadow so can be easily realized
Battery efficiency is rung, does not also increase silver paste cost.
The material of scolding tin of the present invention is preferably tin, leypewter, sn-bi alloy or tin-lead silver alloy, the conducting resinl
The conductive particle that preferably binding agent includes, the conductive particle is preferably silver, gold, copper or alloying metal particle, the bonding
Agent is preferably epoxy resin, phenolic resin, polyurethane, thermoplastic resin or polyimides.
Back contact solar cell piece of the present invention is preferably along perpendicular to the p+ doped regions and n+ doped regions
Long side direction cuts into 2～20 back contact solar baby battery pieces.
So design causes the electric current of battery pack string to greatly reduce, such that it is able to reduce the loss on copper wire.
N-type silicon matrix of the present invention is processed using front preferred first Jing surface wool manufacturings, then using diffusion, laser boring,
The technical combinations such as the annealing of ion implanting ＆, mask, etching silicon substrate back surface make the p+ doped regions that are arranged alternately with each other and
N+ doped regions, and make the n+FSF of low surface dopant concentration in silicon substrate body front surface.
Front-surface field and antireflective passivation layer are additionally provided with the front surface of n-type silicon matrix of the present invention.Antireflective is passivated
The material of layer can be Al2O3/ SiNx, SiO2/ SiNx, SiO2/Al2O3/SiNxDeng further preferred SiO2/ SiNx is used as front table
Face antireflective passivation layer, its thickness is preferably 60～200nm.
It is that passivation layer carries out n+, P+ doped region subregion passivation or while blunt that backside deposition increases reflective stacks passivating film
Change, overlayer passivation film can select Al2O3/SiNx、SiO2/SiNx、SiO2/SiCN、SiO2/SiON etc., further preferred SiO2/
Al2O3/ SiNx is preferably 45～600nm as backside passivation film, thickness.
After the completion of prepared by every a string of battery packs string, it is follow-up conflux, module encapsulation techniques and the routine group such as lamination, lamination
Part production method is similar to.
Compared with prior art, the invention has the advantages that：
(1) sense of current is along the long side direction of strip doped region on each battery pack string in the present invention,
Different from the construction of the main gate line of conventional one parallel doped region short side direction of setting, so as to avoid full back contact battery
The loss in efficiency that brings of main gate line or process complexity are set and the expensive silver paste cost of main gate line is eliminated, without grid line
Full back contact solar cell modular construction thoroughly solves conventional complete exhausted between back contact solar cell main gate line and matrix
The problem of edge, it is to avoid ensure that using insulation paste the long-term reliability of component；
(2) thin grid line connection Spot electrodes are not provided with battery but Spot electrodes is directly connected to so as to again using copper cash
Eliminate the silver paste cost of thin grid line；
(3) simultaneously because cut multiple battery units, the electric current of every a string of cell pieces group string is reduced, so as to reduce
The impact of resistance loss on copper wire, therefore the both positive and negative polarity contact point on thinner copper wire connection battery unit can be adopted, it is ensured that
The fill factor, curve factor of component；
3 points based on more than, battery component of the present invention can not only lift the efficiency of full back contact battery component but also substantially reduce
Its technology difficulty and manufacturing cost.
Description of the drawings
Fig. 1 is when not printing conducting resinl without the full back contact solar cell of grid line in embodiment 1-2 or during scolding tin half
Finished product structure schematic diagram；
Fig. 2 is without the finished product structure schematic diagram of the full back contact solar cell of grid line in embodiment 1-2
Fig. 3 is without the structural representation after the full back contact solar cell laser cutting of grid line in embodiment 1-2；
Fig. 4 is without the postrotational schematic diagram of baby battery piece of the full back contact solar cell cutting of grid line in embodiment 1-2；
Fig. 5 is without the schematic diagram after the full back contact solar baby battery copper cash connection of grid line in embodiment 1-2；
Fig. 6 is that the battery pack string schematic diagram without the full back contact solar baby battery of grid line after copper cash is cut in embodiment 1；
Fig. 7 be cut in embodiment 2 it is after copper cash and little without the full back contact solar of grid line after copper wire is connected with welding
The battery pack string schematic diagram of battery；
1 is n-type silicon matrix, and 2 is front-surface field n+FSF, and 3 is p+ doped regions, and 4 is n+ doped regions, and 5 are front passivation
Layer, 6 is backside passivation layer, and 7 is positive electrode contact site, and 8 is negative electrode contact site, and 9 is the conducting resinls of positive electrode contact site or weldering
Tin, 10 is the conducting resinl or scolding tin of negative electrode contact site, and 11 is copper cash, and 12 is welding.
Specific embodiment
Embodiment 1
As shown in figures 1 to 6, what the present embodiment was provided contacts without the full back contact solar cell component of main grid, including multiple phases
Back contact solar baby battery piece, back contact solar baby battery piece by back contact solar cell piece cutting form, the back of the body connects
Tactile solar battery sheet includes n-type silicon matrix 1, and the back side of n-type silicon matrix is provided with the p+ doped regions for being parallel to each other and being alternately arranged
Domain 3 and n+ doped regions 4, p+ doped regions 3 and n+ doped regions 4 are provided with backside passivation layer 6, and backside passivation layer 6 is provided with
Positive electrode contact site 7 and negative electrode contact site 8, wherein positive electrode contact site 7 are located on the correspondence position of p+ doped regions 3 and and p+
Doped region 3 contacts, and negative electrode contact site 8 is located on the correspondence position of n+ doped regions 4 and with n+ doped regions 4 and contacts,
Conducting resinl is coated with positive electrode contact site 7 and negative electrode contact site 8, back contact solar cell piece is along perpendicular to p+ doped regions
The direction of domain 3 and n+ doped regions 4 cuts into some back contact solar baby battery pieces, when adjacent two baby batteries piece is mutually contacted,
Copper cash 11 is provided with the conducting resinl 9 of positive electrode contact site 7, on the conducting resinl 10 of negative electrode contact site 8 copper cash 11 is also equipped with,
Adjacent two baby batteries piece is directly mutually contacted by copper cash 11, or adjacent two baby batteries piece is mutually contacted by copper cash 11 with welding 12.
As seen in figs. 5-6, when adjacent two baby batteries piece is mutually contacted, a wherein baby battery piece is rotated into 180 ° of acquisitions adjacent
Baby battery piece, wherein the electrode contact of a baby battery piece is equal with the opposite polarity electrode contact of adjacent baby battery piece
Together, when adjacent two baby batteries piece is mutually contacted directly using copper cash by the conducting resinl on the wherein electrode contact of a baby battery piece with
Conducting resinl on the opposite polarity electrode contact of adjacent baby battery piece is connected, and forms series winding cell piece.
And the copper cash on the conducting resinl 10 of the copper cash 11 on the conducting resinl 9 of positive electrode contact site 7 and negative electrode contact site 8
11 parallel settings, and copper cash 11 is along the long side direction setting of p+ doped regions 3 and n+ doped regions 4.
The section of copper cash is circle, and its sectional area is 100～9000 μm2。
Positive electrode contact site is shaped as point-like, and wherein the area of a single point is 100～9000 μm2, between adjacent 2 points
Spacing be 30～2000 μm.
Conducting resinl all covers positive electrode contact site and negative electrode contact site, and local complexity by the way of serigraphy
P+ doped regions and n+ doped regions, conducting resinl is shaped as strip, and conducting resinl is short in p+ doped regions and n+ doped regions
The size of edge direction is 30～1500 μm, and less than p+ doped regions and the size of n+ doped region minor faces.
The conductive particle that conducting resinl includes for binding agent, conductive particle is silver, and binding agent is epoxide resin conductive adhesive.
Back contact solar cell piece cuts into 2 back ofs the body along the long side direction perpendicular to p+ doped regions and n+ doped regions
Contact solar baby battery piece.The structure of this 2 back contact solar baby batteries is identical with size.As shown in Figure 3.
When adjacent two baby batteries piece is mutually contacted, a wherein baby battery piece is rotated into 180 ° and obtains adjacent baby battery piece, such as
Shown in Fig. 4, wherein the opposite polarity electrode contact flush of the electrode contact of a baby battery piece and adjacent baby battery piece,
Copper cash is directly adopted when adjacent two baby batteries piece is mutually contacted by the conducting resinl and phase on the wherein electrode contact of a baby battery piece
Conducting resinl on the opposite polarity electrode contact of adjacent baby battery piece is connected, and forms series winding cell piece.As shown in Figure 5.
In the present embodiment copper cash is first arranged, and first piece baby battery piece is aligned with it, second baby battery piece rotation
It is aligned with copper cash after 180 °, it is ensured that and first piece baby battery piece forms series connection, baby battery piece below is arranged successively by this rule
Row, form a battery pack string.To ensure that these baby battery pieces form the circuit of series connection after unnecessary copper wire excision again, become
One group string of solar module, the electric current on cell piece is led along the long side direction of strip n+ or p+ doped region
Go out.
Main gate line and thin grid line are substituted come collected current by copper cash in the present embodiment, and copper cash is along doped region
Long side direction, it is to avoid the insulation hardly possible problem brought when conventional back contact battery main gate line is across n+ and p+ doped regions.And
Because battery cuts into fritter, electric current is reduced, conducting resinl size is larger to be allowed to using thinner copper wire connection battery list
Conducting resinl in unit, it is ensured that the fill factor, curve factor of component.
As shown in Figure 1-2, the n-type silicon matrix 1 of back contact solar cell piece is processed using front first Jing surface wool manufacturings, then
Made in silicon substrate back surface using technical combinations such as diffusion, laser boring, the annealing of ion implanting ＆, mask, etchings and alternateed
The p+ doped regions 3 and n+ doped regions 4 of arrangement, and make the front-surface field n+ of low surface dopant concentration in silicon substrate body front surface
FSF 2。
Also deposition has antireflective overlayer passivation film to be passivated n+FSF5, such as Al on front surface of the present invention2O3/ SiNx, SiO2/
SiNx, SiO2/Al2O3/SiNxDeng further preferred SiO2Used as front passivating film, thickness is 60～200nm to/SiNx.
Backside deposition increases reflective stacks passivating film passivation layer 6 and carries out n+, P+ doped region subregion passivation or while blunt
Change, overlayer passivation film can select Al2O3/SiNx、SiO2/SiNx、SiO2/SiCN、SiO2/SiON etc., further preferred SiO2/
Al2O3/ SiNx is preferably 45～600nm as backside passivation film, thickness.
After the completion of prepared by every a string of batteries, it is follow-up conflux, module encapsulation techniques and the general components system such as lamination, lamination
Make mode to be similar to.
The above-mentioned preparation method without the full back contact solar cell component of main grid is as follows：
(1) from N-shaped single crystal silicon substrate 1, its resistivity is 1～30 Ω cm, and thickness is 50～300 μm, the silicon substrate
Processed using front first Jing surface wool manufacturings, then using technology groups such as diffusion, laser boring, the annealing of ion implanting ＆, mask, etchings
The p+ doped regions 3 and n+ doped regions 4 being arranged alternately with each other in the making of silicon substrate back surface is closed, is made in silicon substrate body front surface
The n+FSF 2 of low surface dopant concentration.
(2) front surface deposition antireflective overlayer passivation film 5 is passivated n+FSF, such as Al2O3/ SiNx, SiO2/ SiNx, SiO2/
Al2O3/ SiNx etc., selects here SiO2Used as front passivating film, thickness is 60～200nm to/SiNx, and it is folded that rear surface deposition increases reflection
Layer passivating film 6 is carried out n+ doped regions, P+ doped regions subregion passivation or while is passivated, overlayer passivation film can be selected
Al2O3/SiNx、SiO2/SiNx、SiO2/SiCN、SiO2/ SiON etc., selects here SiO2/Al2O3/ SiNx as backside passivation film,
Thickness is 45～600nm.
(3) positive electrode contact point 7 is made on p+ doped regions 3, negative electrode contact point 8 is made on n+ doped regions 4,
Contact point can with using printing silver paste directly burn by the way of backside passivation film can also be republished using first laser opening or
The mode of plating metal, so as to form the Ohmic contact of contact point and silicon substrate, contact point shape is not limited, single contact point
Area is 100 μm2～90000 μm2。
(4) anneal or sinter and cause contact point and silicon substrate to form good Ohmic contact, in n+ doped regions and p+
Doped region surface printing conducting resinl connection electrode contact point is used to derive in electric current, and conducting resinl is in doped region short side direction
Length be 20～1500 μm and less than the length of doped region minor face to ensure between conducting resinl and adjacent doped areas matrix
Insulating properties.
(5) above-mentioned back contact solar cell piece is cut, the back contact solar of said structure is formed after cutting
Baby battery piece.
(6) when adjacent two back contact solars baby battery piece is in series, using many copper wires being parallel to each other one is connected to
Conducting resinl on the electrode of back contact solar baby battery piece is while these copper wires are connected to the pole of adjacent solar energy baby battery piece
Conducting resinl on the contrary electrode of property, the electric current on cell piece is led along the long side direction of strip n+ or p+ doped region
Go out.Ensure that the electrode on each strip n+ and p+ doped regions on baby battery piece passes through conducting resinl when copper wire is connected up
It is connected with a copper wire.The back contact solar baby battery back side can upward be placed in series welding, adjacent solar energy baby battery
Rotation 180 ° and finely tune cell piece in the position of copper cash or so so that the opposite electrode of adjacent cell piece point-blank, so
The copper wire that many stretch is placed on scolding tin or conducting resinl afterwards, heating by way of cause copper cash be solidificated in scolding tin or
So as to the electrode with battery is connected on conducting resinl.To ensure that these baby battery pieces are formed after unnecessary copper wire line segment excision again
The circuit of series connection, becomes a group string of solar cell module, and each group string includes 6～200 solar energy baby batteries.
(7) after the completion of prepared by every a string of batteries, it is follow-up conflux, module encapsulation techniques and the general components such as lamination, lamination
Production method is similar to.
Embodiment 2
As shown in fig. 7, as different from Example 1：When adjacent two baby batteries piece is mutually contacted, adjacent two baby batteries chip architecture
Identical (need not overturn 180 °), wherein the polarity identical electrode of the electrode contact of a baby battery piece and adjacent baby battery piece
Contact site flush, the copper cash on positive electrode contact site is not lined up with the copper cash two ends on negative electrode contact site, respectively with prominent
Go out end and shorten end, the jag of the copper cash on adjacent two baby batteries piece is connected using welding, form series winding cell piece.And
The welding does not contact with the shortening end of the copper cash on adjacent two baby batteries piece.
I.e. using welding and the jag phase for being connected to the wherein copper wire of the negative electrode of a back contact solar baby battery piece
Welding, while this welding is mutually welded with the jag of the copper wire of the positive electrode for being connected to adjacent back contact solar baby battery piece.
The width of welding is 0.2～2mm, and length is close with baby battery leaf length.
So compare embodiment 1 and easily test battery efficiency, probe is contacted into the welding that both positive and negative polarity is connected.
Although the present invention is disclosed as above with embodiment, it is not limited to protection scope of the present invention, for example, lead
The material of electric adhesive tape or scolding tin can also be the other materials that Summary is enumerated, and be only herein to enumerate, and be not construed as limiting,
The graphic structure of point contact can also carry out exchange adjustment, for example, can adjust the position of p+ doped regions and n+ doped regions
Change, while the position of adaptive adjustment positive electrode contact site and negative electrode contact site, can also be by back contact solar cell
Piece is cut into more than 2, preferably 2～20, any to be familiar with those skilled in the art, in the design without departing from the present invention and
In the range of the change made and retouching, protection scope of the present invention all should be belonged to.
Claims (10)
1. one kind is without the full back contact solar cell component of grid line, including the back contact solar baby battery piece of multiple phases series winding,
The back contact solar baby battery piece is formed by the cutting of back contact solar cell piece, the back contact solar cell piece bag
N-type silicon matrix is included, the back side of the n-type silicon matrix is provided with the p+ doped regions and n+ doped regions for being parallel to each other and being alternately arranged
Domain, the p+ doped regions and n+ doped regions are provided with backside passivation layer, and the backside passivation layer is provided with positive electrode contact
Portion and negative electrode contact site, wherein positive electrode contact site on the p+ doped regions correspondence position and with the p+ doped regions
Domain contacts, and the negative electrode contact site connects on the n+ doped regions correspondence position and with the n+ doped regions
Touch, it is characterized in that：Scolding tin or conducting resinl, the back contacts are coated with the positive electrode contact site and the negative electrode contact site
Solar battery sheet cuts into some back contacts sun along the long side direction perpendicular to the p+ doped regions and n+ doped regions
Energy baby battery piece, when adjacent two baby batteries piece is mutually contacted, on the scolding tin or conducting resinl of the positive electrode contact site copper cash is provided with,
Copper cash is also equipped with the scolding tin or conducting resinl of the negative electrode contact site, adjacent two baby batteries piece is directly mutually gone here and there by copper cash
Connect, or adjacent two baby batteries piece is mutually contacted by copper cash with welding.
2. according to claim 1 without the full back contact solar cell component of grid line, it is characterized in that：Adjacent two baby batteries piece
When mutually contacting, a wherein baby battery piece is rotated into 180 ° and obtains adjacent baby battery piece, wherein the electrode contact of a baby battery piece
The opposite polarity electrode contact flush of portion and adjacent baby battery piece, adjacent two baby batteries piece directly adopts copper when mutually contacting
Line is by the opposite polarity electrode of the scolding tin or conducting resinl on the wherein electrode contact of a baby battery piece and adjacent baby battery piece
Welding or conducting resinl on contact site is connected, and forms series winding cell piece.
3. according to claim 1 without the full back contact solar cell component of grid line, it is characterized in that：Adjacent two baby batteries piece
When mutually contacting, adjacent two baby batteries chip architecture is identical, wherein the pole of the electrode contact of a baby battery piece and adjacent baby battery piece
Copper cash two on property identical electrode contact flush, the copper cash on the positive electrode contact site and the negative electrode contact site
End does not line up, and respectively with jag and shortening end, the copper cash jag on adjacent two baby batteries piece is connected using welding,
Form series winding cell piece.
4. according to any one of claim 1-3 without the full back contact solar cell component of grid line, it is characterized in that：It is described just
Copper cash on the scolding tin or conducting resinl of electrode contact is equal with the copper cash on the scolding tin or conducting resinl of the negative electrode contact site
Row is arranged, and the copper cash is arranged along the long side direction of the p+ doped regions and the n+ doped regions.
5. according to claim 4 without the full back contact solar cell component of grid line, it is characterized in that：The section of the copper cash
For circular or ellipse, its sectional area is 100～9000 μm2。
6. according to claim 4 without the full back contact solar cell component of grid line, it is characterized in that：The positive electrode contact
Portion is shaped as point-like or wire, and the wherein area of a single point or single hop line is 100～9000 μm2, adjacent 2 points or adjacent two
Spacing between section line is 30～2000 μm.
7. according to claim 4 without the full back contact solar cell component of grid line, it is characterized in that：The scolding tin or conduction
Glue all covers the positive electrode contact site and the negative electrode contact site using serigraphy or mode for dispensing glue, and local or
All cover the strip that is shaped as of the p+ doped regions and n+ doped regions, the scolding tin or conducting resinl, the scolding tin or
Conducting resinl is 30～1500 μm in the short side dimension of p+ doped regions and n+ doped regions, and less than the p+ doped regions and n+
The size of doped region minor face.
8. according to claim 4 or 7 without the full back contact solar cell component of grid line, it is characterized in that：The scolding tin
Material is tin, leypewter, sn-bi alloy or tin-lead silver alloy, and the conductive particle that the conducting resinl includes for binding agent is described
Conductive particle is silver-colored, gold, copper or alloying metal particle, and the binding agent is epoxy resin, phenolic resin, polyurethane, thermoplasticity
Resin or polyimides.
9. according to claim 4 without the full back contact solar cell component of grid line, it is characterized in that：The back contacts sun
Energy cell piece cuts into 2～20 back contact solars along the long side direction perpendicular to the p+ doped regions and n+ doped regions
Baby battery piece.
10. according to claim 4 without the full back contact solar cell component of grid line, it is characterized in that：The n-type silicon matrix
Front surface on be additionally provided with front-surface field and antireflective passivation layer.
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| CN201710047512.7A CN106653912B (en) | 2017-01-22 | 2017-01-22 | Grid-line-free full back contact solar cell module |
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|---|---|---|---|
| CN201710047512.7A CN106653912B (en) | 2017-01-22 | 2017-01-22 | Grid-line-free full back contact solar cell module |
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