CN110129056B - Etchant composition for integrated circuits - Google Patents
Etchant composition for integrated circuits Download PDFInfo
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- CN110129056B CN110129056B CN201910275879.3A CN201910275879A CN110129056B CN 110129056 B CN110129056 B CN 110129056B CN 201910275879 A CN201910275879 A CN 201910275879A CN 110129056 B CN110129056 B CN 110129056B
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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Abstract
The invention provides an etchant composition for integrated circuits, which belongs to the technical field of etching and comprises 3-10wt% of nitric acid based on the total weight of the etchant composition; 9-16wt% hydrochloric acid; 0.01-1wt% of mesona blume gum; and the balance water. The etching method by using the etchant composition comprises the following steps: forming a metal oxide layer on a substrate; selectively leaving a photoreactive material on the metal oxide layer to expose a portion of the metal oxide layer; and etching the exposed metal oxide layer using the etchant composition. The etchant composition has the advantages of controllable etching rate, good etching effect, accurate thickness etching and no etching residues, has better etching uniformity and stability, can provide excellent etching profile, shows excellent etching performance, is not easy to damage a metal electrode structure, and is not easy to leave residues causing electrical short circuit.
Description
Technical Field
The invention belongs to the technical field of etching, and particularly relates to an etchant composition for an integrated circuit.
Background
Since the end of the last century, the rapid development of integrated circuit technology, the integration level of which has increased rapidly, has doubled in a year and half, and it almost follows moore's law. This era created powerful and fast-operating semiconductor integrated circuits, which was one of the curiosities of the twentieth century. A Thin Film Transistor (TFT) for an integrated circuit is a field effect transistor, which is composed of different types of thin films such as a semiconductor active layer, an insulating layer, and a metal electrode. TFTs are mainly classified into amorphous silicon (a-Si: H) TFTs, Low Temperature Polysilicon (LTPS) TFTs, organic TFTs and oxide TFTs according to the kind of semiconductor active layer material, wherein the oxide TFTs have a high mobility of 10-100cm2and/Vs, the stability is good, the electrical uniformity is good, and the method is suitable for manufacturing large-size high-end display panels. One oxide semiconductor device that is currently of great interest is a zinc oxide-based thin film transistor. Zinc oxide-based materials (such as zinc oxide, In-Zn oxides, and In-Zn oxides doped with Ga, Mg, Al, Fe, etc.) have been introduced. The ZnO-based semiconductor device may be manufactured by a low-temperature process and in an amorphous phase, thereby having an advantage of easily increasing its area. In addition, the zinc oxide-based semiconductor film is a material having high mobility and has very favorable electrical properties (e.g., polysilicon). In recent years, studies have been conducted on the use of an oxide semiconductor material layer having high mobility (i.e., a zinc oxide-based material layer in a channel region of a thin film transistor).
The oxide material may be etched by a dry or wet process. Etching is carried out by chemical reaction or physical action to remove the exposed part of the lower material in the developed photoresist pattern, i.e. to copy the photoresist pattern onto the underlying material. The method is divided into dry etching and wet etching according to different etchants, and also can be divided into isotropic etching and anisotropic etching according to different etching rates of crystal faces. Several major factors affecting etch performance are: 1) etching rate: the thickness of the film is measured in candle-carving in unit time, and the production efficiency is greatly influenced; 2) etching uniformity: it includes uniformity within a silicon wafer or between multiple silicon wafers; 3) and (3) selectivity: the ratio of etch rates between different materials; 4) drilling and candle-making: the lateral decay candle under the mask is an important factor influencing the fidelity of the conversion from the photoresist pattern to the bottom material pattern. The wet etching is to decompose the film to be etched on the wafer by using a corresponding etching solution, and then to convert the film into a soluble compound and remove the compound. Of course, the portion that is not to be etched is covered with photoresist before etching because of the ability of the photoresist to resist etching. The wet etching mainly utilizes acid-base solution to react with the film on the wafer, so we can usually make corresponding selection and concentration matching to the chemical reagent and keep the etching solution at a specific temperature, etc. to achieve a specific etching selection ratio and a required etching speed. Wet etching is highly efficient and less contaminating to the chip and is widely used in semiconductor manufacturing, but wet etching also has disadvantages in that wet etching is isotropic and unwanted excess etching occurs in lateral areas on the wafer when it etches the desired pattern onto the wafer. Thus, the desired device may differ from the ideal device in shape, and the line width of the device may also differ from the ideal.
The chemical etching method of the oxide material which is disclosed at present mainly focuses on the use of various acid or alkali solutions, and the oxide device process is not mature, and the main reason is that the micro-processing process of the oxide-based transparent conductive film material is not solved. As known, Al, Ga, Zn and In-based oxide is an amphoteric oxide, and has the disadvantages of excessively strong reaction to acid and alkali, severe lateral corrosion, high etching rate and difficult control. For example, the lateral etching problem In the wet etching of the zinc oxide-based thin film is the bottleneck of the popularization and application of the Al, Ga, Zn and In-based oxide thin film. The chinese invention patent CN 103980905B provides an etching solution for an oxide material system, which comprises an oxide etching solution, a conditioner for adjusting consistency and water; the etching solution can be generally applicable to etching of Sn, Zn, Al, Ga, In base and alloy oxide thin film materials thereof, especially etching of ZnO, AZO, GZO, IGZO, IZO and other oxide materials, and can also be widely used for etching of oxide materials In preparation of fine electronic components, such as semiconductor photoelectric devices, solar cells, TFT thin film transistors, semiconductor integrated circuits, transparent electrodes and the like; compared with the traditional etching solution, the etching solution has the effects of inhibiting side etching, preventing uneven etching and preventing etching residues.
Disclosure of Invention
The present invention has been made in an effort to provide an etchant composition for integrated circuits having advantages of a controllable etching rate, a good etching effect, precise thickness etching, and no etching residues, having good etching uniformity and stability, providing an excellent etching profile, exhibiting excellent etching performance, being less susceptible to damage of a metal electrode structure, and being less susceptible to leave residues causing electrical short circuits.
The technical scheme adopted by the invention for realizing the purpose is as follows:
an etchant composition for integrated circuits comprising, based on the total weight of the etchant composition,
3-10wt% nitric acid;
9-16wt% hydrochloric acid;
0.01-1wt% of mesona blume gum;
and the balance water.
Nitric acid, which is a main oxidant for etching the metal oxide layer, can sufficiently etch at an appropriate etch rate without leaving residues, and nitric acid in this concentration range does not deform or lack the photoresist, the underlying gate wire, the source/drain wire, and the like due to chemical damage. Hydrochloric acid as a pro-oxidant may functionThe effect of controlling the etching rate together with nitric acid allows sufficient etching at an appropriate etching rate without leaving residues, and hydrochloric acid in this concentration range does not cause excessive etching, so that there is an advantage of not causing deformation or deficiency of the underlying gate wire and source/drain wires, etc. due to chemical damage. The mesona chinensis benth gum is characterized in that the main component of the mesona chinensis benth is mesona chinensis benth polysaccharide, and contains functional components such as polyphenol, flavonoid, terpenoids and the like, on one hand, the mesona chinensis benth gum has relatively extended and rigid molecular conformation, and a large number of hydrophilic groups (such as-OH) are contained on a molecular chain, so that more hydrogen bonds and water combination are caused, the viscosity of a water phase is increased, and H for ionizing an etching composition can be controlled+The motion range of the ions can control the etching rate and prevent H+Ions are etched along the weak positions such as a grain boundary, so that the uniformity of etching can be improved while side etching and over etching are inhibited, and the production interest rate is increased; on the other hand, the mesona blume gum has oxidation resistance, can solve the defects that the traditional oxidant damages the bottom wiring film and can have improved long-term storability, and the existence of the uronic acid structure in the mesona blume gum can solve the problem of re-adsorption of residues occurring when or after etching the oxide film; and finally, the corrosion of the metal material of the metal electrode can be inhibited, no metal preservative is required to be additionally added, and the metal electrode is non-toxic, harmless and safe to human bodies. The components in the etchant composition of the etchant composition play a gain role, and the etchant composition has the advantages of controllable etching rate, good etching effect, accurate thickness etching and no etching residues.
Preferably, the content of Mesona polysaccharide in Mesona chinensis Benth is higher than 83.25%.
Preferably, the etchant composition is used for etching a metal oxide single layer film or a multi-layer film composed of a single layer film.
Preferably, the oxide monolayer film includes a Ga-X-O layer, X being In, Zn, or In-Zn.
Preferably, the weight% ratio of nitric acid to hydrochloric acid in the etchant composition is 1: 0.3-2. If the content ratio (by weight) of nitric acid to hydrochloric acid satisfies the above range, etching can be performed quickly and uniformly.
Preferably, the etchant composition further comprises a surfactant. The addition of the surfactant to the etchant can ensure etching uniformity and etching rate by reducing surface tension, and the surfactant is not particularly limited as long as the surfactant is resistant to the etchant composition of the present invention and is compatible with the composition, however, the surfactant may include: for example, anionic surfactants, cationic surfactants, amphoteric surfactants, nonionic surfactants, and the like. These surfactants may be used alone or in combination of two or more thereof. Preferably, sodium p-toluenesulfonate, benzenesulfonic acid, alkylbenzenesulfonic acid containing an alkyl group having 1 to 6 carbon atoms, and the like can be exemplified. More specifically, sodium p-toluenesulfonate may be used in view of improvement in the ability to remove metal oxide residues.
Preferably, the etchant composition further comprises hydroxylamine nitrate. Hydroxylamine (NH) of hydroxylamine nitrate2OH) as NH in the etchant composition of the invention3OH+Form exists so when H+Diffusion to the oxide film does not effectively bond with hydroxylamine, which prevents more H from the solution+The migration to the interface of the solution-oxide film can selectively control the etching rate of the oxide film, and simultaneously, as the etching progresses, some metal ions can appear in the etchant composition, and the existence of the metal ions can promote the decomposition of hydroxylamine nitrate, increase the nitric acid concentration in the etchant composition, maintain the etching rate and finally ensure the uniformity and stability of the etching; and the Mesona gum can improve the initial stability of hydroxylamine nitrate, and two functions of gain are performed to promote the uniformity and stability of etching. Preferably, the effect is best when the content of hydroxylamine nitrate in the etchant composition is 0.27-0.35 wt%.
Preferably, the etchant composition includes, based on the total weight of the etchant composition, 5-8wt% nitric acid; 10-12wt% hydrochloric acid; 0.1-0.3wt% of mesona blume gum; 0.5-0.7wt% of a surfactant; 0.31-0.33wt% hydroxylamine nitrate and balance water.
The invention also discloses an etching method of the metal oxide layer, and the etchant composition is utilized.
Preferably, the etching method comprises the steps of:
forming a metal oxide layer on a substrate;
selectively leaving a photoreactive material on the metal oxide layer to expose a portion of the metal oxide layer;
and etching the exposed metal oxide layer using the etchant composition. The photoreactive material is preferably any conventional photoresist material that can be selectively retained by conventional exposure and development processes according to the etching method of the present invention.
Compared with the prior art, the invention has the beneficial effects that: the components in the etchant composition of the etchant composition play a gain role, and the etchant composition has the advantages of controllable etching rate, good etching effect, accurate thickness etching and no etching residues.
The technical scheme is adopted to provide the etchant composition for the integrated circuit, so that the defects of the prior art are overcome, the design is reasonable, and the operation is convenient.
Detailed Description
In order that the invention may be more fully understood, a more particular description of the invention will now be rendered by reference to specific embodiments thereof that are illustrated in the appended drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention.
The invention provides an etchant composition for integrated circuits, comprising, based on the total weight of the etchant composition,
3-10wt% nitric acid;
9-16wt% hydrochloric acid;
0.01-1wt% of mesona blume gum;
and the balance water.
For example, 4 wt% nitric acid, 9.5 wt% hydrochloric acid, 0.02 wt% Mesona gum, and the balance water; 5 wt% of nitric acid, 15 wt% of hydrochloric acid, 0.8 wt% of mesona blume and the balance of water; 6wt% of nitric acid, 14.6 wt% of hydrochloric acid, 0.75 wt% of mesona blume and the balance of water; 6.3 wt% of nitric acid, 13 wt% of hydrochloric acid, 0.6 wt% of mesona blume and the balance of water; 7wt% of nitric acid, 12wt% of hydrochloric acid, 0.1 wt% of mesona blume and the balance of water; 8wt% of nitric acid, 11 wt% of hydrochloric acid, 0.3wt% of mesona blume and the balance of water; 9.2 wt% of nitric acid, 10wt% of hydrochloric acid, 0.5 wt% of mesona blume and the balance of water; and so on.
Wherein nitric acid is a main oxidant for etching the metal oxide layer, the etching can be sufficiently performed at a proper etching rate without leaving residues, and the nitric acid within this concentration range does not deform or lack the photoresist, the underlying gate wire, the source/drain wire, and the like due to chemical damage. The hydrochloric acid as a co-oxidant may function to control an etching rate together with the nitric acid, may sufficiently etch at a proper etching rate without leaving a residue, and the hydrochloric acid in this concentration range does not cause excessive etching, so there is an advantage that it does not cause deformation or deficiency of the underlying gate wire and source/drain wires, etc. due to chemical damage. The Mesona chinensis Benth is prepared from Mesona chinensis Benth as main ingredient, and contains functional components such as polyphenol, flavonoid, and terpenoids, and has relatively extended and rigid molecular conformation, and large molecular chainAn amount of hydrophilic groups (e.g., -OH) that results in more hydrogen bonding and water binding, resulting in an increase in viscosity of the aqueous phase, can control H for ionization of the etching composition+The motion range of the ions can control the etching rate and prevent H+Ions are etched along the weak positions such as a grain boundary, so that the uniformity of etching can be improved while side etching and over etching are inhibited, and the production interest rate is increased; on the other hand, the mesona blume gum has oxidation resistance, can solve the defects that the traditional oxidant damages the bottom wiring film and can have improved long-term storability, and the existence of the uronic acid structure in the mesona blume gum can solve the problem of re-adsorption of residues occurring when or after etching the oxide film; and finally, the corrosion of the metal material of the metal electrode can be inhibited, no metal preservative is required to be additionally added, and the metal electrode is non-toxic, harmless and safe to human bodies. The components in the etchant composition of the etchant composition play a gain role, and the etchant composition has the advantages of controllable etching rate, good etching effect, accurate thickness etching and no etching residues.
Wherein the content of Mesona polysaccharide in Mesona procumbens gum is higher than 83.25%.
Wherein the etchant composition is used for etching a metal oxide single layer film or a multilayer film composed of the above single layer film.
Wherein the oxide single-layer film comprises a Ga-X-O layer, and X is In, Zn or In-Zn.
Wherein the weight percent ratio of the nitric acid to the hydrochloric acid in the etchant composition is 1: 0.3-2. If the content ratio (by weight) of nitric acid to hydrochloric acid satisfies the above range, etching can be performed quickly and uniformly.
Wherein the etchant composition further comprises a surfactant. The addition of the surfactant to the etchant can ensure etching uniformity and etching rate by reducing surface tension, and the surfactant is not particularly limited as long as the surfactant is resistant to the etchant composition of the present invention and is compatible with the composition, however, the surfactant may include: for example, anionic surfactants, cationic surfactants, amphoteric surfactants, nonionic surfactants, and the like. These surfactants may be used alone or in combination of two or more thereof. Preferably, sodium p-toluenesulfonate, benzenesulfonic acid, alkylbenzenesulfonic acid containing an alkyl group having 1 to 6 carbon atoms, and the like can be exemplified. More specifically, sodium p-toluenesulfonate may be used in view of improvement in the ability to remove metal oxide residues.
Wherein the etchant composition further comprises hydroxylamine nitrate. Hydroxylamine (NH) of hydroxylamine nitrate2OH) as NH in the etchant composition of the invention3OH+Form exists so when H+Diffusion to the oxide film does not effectively bond with hydroxylamine, which prevents more H from the solution+The migration to the interface of the solution-oxide film can selectively control the etching rate of the oxide film, and simultaneously, as the etching progresses, some metal ions can appear in the etchant composition, and the existence of the metal ions can promote the decomposition of hydroxylamine nitrate, increase the nitric acid concentration in the etchant composition, maintain the etching rate and finally ensure the uniformity and stability of the etching; and the Mesona gum can improve the initial stability of hydroxylamine nitrate, and two functions of gain are performed to promote the uniformity and stability of etching. Preferably, the effect is best when the content of hydroxylamine nitrate in the etchant composition is 0.27-0.35 wt%.
Wherein the etchant composition comprises, based on the total weight of the etchant composition, 5-8wt% of nitric acid; 10-12wt% hydrochloric acid; 0.1-0.3wt% of mesona blume gum; 0.5-0.7wt% of a surfactant; 0.31-0.33wt% hydroxylamine nitrate and balance water.
The invention also provides an etching method of the metal oxide layer, and the etchant composition is utilized.
The etching method comprises the following steps:
forming a metal oxide layer on a substrate;
selectively leaving a photoreactive material on the metal oxide layer to expose a portion of the metal oxide layer;
and etching the exposed metal oxide layer using the etchant composition. The photoreactive material is preferably any conventional photoresist material that can be selectively retained by conventional exposure and development processes according to the etching method of the present invention.
The following further describes embodiments of the present invention with reference to specific examples.
Example 1:
an etchant composition for integrated circuits comprising, based on the total weight of the etchant composition,
3wt% nitric acid;
16wt% hydrochloric acid;
0.01 wt% of Mesona gum;
and the balance water.
The content of Mesona polysaccharide in the Mesona chinensis Benth is higher than 83.25%.
Example 2:
an etchant composition for integrated circuits comprising, based on the total weight of the etchant composition,
10wt% nitric acid;
16wt% hydrochloric acid;
1wt% of mesona blume gum;
and the balance water.
The content of Mesona polysaccharide in the Mesona chinensis Benth is higher than 83.25%.
Example 3:
an etchant composition for integrated circuits comprising, based on the total weight of the etchant composition,
8wt% nitric acid;
12wt% hydrochloric acid;
0.2 wt% of Mesona gum;
and the balance water.
The content of Mesona polysaccharide in the Mesona chinensis Benth is higher than 83.25%.
Example 4:
an etchant composition for an integrated circuit comprising, based on the total weight of the etchant composition, 8wt% nitric acid; 12wt% hydrochloric acid; 0.2 wt% of Mesona gum; 0.6 wt% sodium toluenesulfonate and the balance water.
The content of Mesona polysaccharide in the Mesona chinensis Benth is higher than 83.25%.
Example 5:
an etchant composition for an integrated circuit comprising, based on the total weight of the etchant composition, 8wt% nitric acid; 12wt% hydrochloric acid; 0.2 wt% of Mesona gum; 0.6 wt% sodium toluenesulfonate; 0.32 wt% hydroxylamine nitrate and balance water.
Example 6:
a method for etching a metal oxide layer using the above etchant composition for etching a metal oxide single layer film or a multilayer film composed of single layer films, the etching method comprising the steps of:
forming a metal oxide layer on a substrate;
selectively leaving a photoreactive material on the metal oxide layer to expose a portion of the metal oxide layer;
and etching the exposed metal oxide layer using the etchant composition.
The oxide single-layer film comprises a Ga-X-O layer, wherein X is In, Zn or In-Zn.
Comparative example 1:
the technical scheme of the comparative example is different from that of the embodiment 3 in that: the comparative etchant composition contained no fennel gum.
Comparative example 2:
the technical scheme of the comparative example is different from that of the embodiment 3 in that: the content of Mesona polysaccharide in Mesona chinensis Benth in the etchant composition of the present comparative example was less than 83.25%.
Comparative example 3:
the technical scheme of the comparative example is different from that of the embodiment 4 in that: the etchant composition of this comparative example did not contain mesona blume gum.
Comparative example 4:
the technical scheme of the comparative example is different from that of the example 5 in that: the etchant composition of this comparative example did not contain mesona blume gum.
Test example 1:
evaluation of etching Performance
Substrates were manufactured by laminating a metal oxide layer (Ga-Zn-O layer or Ga-In-Zn-O layer) on a glass plate, and patterning the metal oxide layer with photoresist In a desired form, and the substrates were cut into samples having dimensions of 550mm × 650mm, respectively, with a diamond knife.
The prepared etchant composition was placed in a test instrument in an injection etching mode (etcher (TFT), SEMES corporation) and heated to a preset temperature of 30 ℃. Then, after the temperature reached 30 ℃ ± 0.1 ℃, an etching process was performed using the etchant compositions of example 1, example 2, example 3, example 4, example 5, comparative example 1, comparative example 2, comparative example 3, and comparative example 4. The etch was 60% performed during the total etch time referenced to the EPD (end point detector) time. Each sample was introduced into the testing instrument and injection was then initiated. After etching was complete, the treated sample was removed from the instrument, rinsed with deionized water, dried using a hot air blower, and then the photoresist was removed from the dried sample using a photoresist stripper. After cleaning and drying, the sample was evaluated for etching performance including change in side etching loss (critical dimension (CD) bias), taper angle, absence of metal oxide layer, and the like, using a Scanning Electron Microscope (SEM) (S-4700, HITACHI corporation).
< criteria for evaluation >
Very good: excellent (CD deflection is less than or equal to 1 μm, cone angle is 40-60 degree);
o: good (1 μm < CD skew ≦ 1.5 μm, cone angle 30-60 °);
and (delta): good (1.5 μm < CD skew. ltoreq.2 μm, cone angle: 30 DEG to 60 DEG).
X: defects (absence of oxide layer or presence of residue). The results are shown in Table 1.
TABLE 1 evaluation results of etching Properties
As shown in table 1, it was confirmed that: the etchant compositions prepared in examples 1 to 5 can provide excellent etching profile and exhibit excellent etching properties (including, in particular, no damage to a glass substrate, no defect of a metal layer, no occurrence of residue, etc.). Comparing example 3, example 4 and example 5, it can be seen that the etching performance of example 5 is the best, that of example 4, and that of example 3 is the worst, which shows that the existence of hydroxylamine nitrate and surfactant sodium toluene sulfonate can improve the etching performance; comparing example 3 with comparative examples 1 and 2, it can be seen that example 3 has better etching performance than comparative examples 1 and 2, which indicates that the cactus gum can improve the uniformity of etching while inhibiting lateral etching and over-etching, can solve the disadvantages of the conventional oxidizer damaging the wiring film and can have improved long-term storability, and the presence of uronic acid structure in the cactus gum can solve the re-adsorption problem of residue occurring when or after etching the oxide film, and furthermore, the content of cactus polysaccharide in the cactus gum is higher than 83.25%, and the etching performance of the etching composition is superior; comparing example 4 and comparative example 3, and comparing example 5 and comparative example 4, it can be seen that the etching performance of example 4 is better than that of comparative example 3, and the etching performance of example 5 is better than that of comparative example 4, which indicates that the presence of mesona blume can improve the etching performance of the etching composition.
Conventional techniques in the above embodiments are known to those skilled in the art, and therefore, will not be described in detail herein.
The above embodiments are merely illustrative, and not restrictive, and those skilled in the art can make various changes and modifications without departing from the spirit and scope of the invention. Therefore, all equivalent technical solutions also belong to the scope of the present invention, and the protection scope of the present invention should be defined by the claims.
Claims (8)
1. An etchant composition for integrated circuits, characterized in that: comprising, based on the total weight of the etchant composition,
3-10wt% nitric acid;
9-16wt% hydrochloric acid;
0.01-1wt% of mesona blume gum;
and the balance water;
wherein the weight percent ratio of the nitric acid to the hydrochloric acid is 1:0.3-2, and the content of Mesona polysaccharide in the Mesona chinensis Benth is higher than 83.25%.
2. The etchant composition for integrated circuits of claim 1 wherein: the etchant composition is used for etching a metal oxide single layer film or a multi-layer film composed of the single layer film.
3. The etchant composition for integrated circuits of claim 2 wherein: the oxide single-layer film comprises a Ga-X-O layer, and X is In, Zn or In-Zn.
4. The etchant composition for integrated circuits of claim 1 wherein: the etchant composition also includes a surfactant.
5. The etchant composition for integrated circuits of claim 1 wherein: the etchant composition also includes hydroxylamine nitrate.
6. The etchant composition for integrated circuits of claim 5 wherein: the etchant composition includes, based on the total weight of the etchant composition, 5-8wt% nitric acid; 10-12wt% hydrochloric acid; 0.1-0.3wt% of mesona blume gum; 0.5-0.7wt% of a surfactant; 0.31-0.33wt% hydroxylamine nitrate and balance water.
7. The etching method of the metal oxide layer is characterized in that: use of the etchant composition of any one of claims 1 to 6.
8. The method for etching a metal oxide layer according to claim 7, wherein: the etching method comprises the following steps:
forming a metal oxide layer on a substrate;
selectively leaving a photoreactive material on the metal oxide layer to expose a portion of the metal oxide layer;
and etching the exposed metal oxide layer using the etchant composition.
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| KR101294968B1 (en) * | 2006-11-20 | 2013-08-09 | 동우 화인켐 주식회사 | Etching solution composition and method of etching using the etching solution composition |
| KR20140086666A (en) * | 2012-12-28 | 2014-07-08 | 동우 화인켐 주식회사 | Etchant composition for metal oxide layer |
| TWI488943B (en) * | 2013-04-29 | 2015-06-21 | Chi Mei Corp | Etching paste composition and the application thereof |
| JP2017216444A (en) * | 2016-05-31 | 2017-12-07 | ナガセケムテックス株式会社 | Etchant |
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