CN208861996U - A kind of Schottky chip and Schottky diode of arbitrary structures - Google Patents

Abstract

A kind of Schottky chip and Schottky diode of arbitrary structures, belong to technical field of semiconductors.Epitaxial layer (7) including substrate (8) and substrate (8) surface, epitaxial layer (7) surface is provided with schottky interface (6), it is characterized by: any position on the outside of Schottky chip (3) cuts to form cut surface (10), cut surface (10) surface is provided with insulating layer.In the Schottky chip of this arbitrary structures and Schottky diode, by the way that insulating layer is arranged, instead of traditional pressure ring, therefore it avoids in pressure ring because of the defect of reduced performance pressure-resistant caused by crooked radian position, it can be cut at an arbitrary position when carrying out wafer cutting simultaneously, the flexibility for improving chip cutting reduces technology difficulty while ensure that compressive resistance.

Description

A kind of Schottky chip and Schottky diode of arbitrary structures

Technical field

A kind of Schottky chip and Schottky diode of arbitrary structures, belong to technical field of semiconductors.

Background technique

In recent years due to the low conducting pressure of Schottky barrier diode (Schottky Barrier Diode, abbreviation SBD) Drop and extremely short reverse recovery time cause people to the raising of circuit system efficiency and pay much attention to and be widely used.SBD has three A feature is more prominent: (1) because schottky barrier height is less than PN junction barrier height, the cut-in voltage and conduction voltage drop of SBD It is smaller than PIN diode, power loss in circuit can be reduced to reduced levels；(2) junction capacity of SBD is lower, its work Working frequency is up to 100GHz；(3) SBD is the injection there is no minority carrier, therefore switching speed is faster, itself Reverse recovery Time is the charge and discharge time of Schottky barrier capacitor.

Traditional Schottky diode equally exists following defect: when (1) due to reverse blocking capability close to 200V, Xiao Te The forward voltage drop VF of base rectifier is by close to the forward voltage drop of PIN rectifier, therefore traditional Schottky barrier diode is anti- It is generally below 200V to blocking voltage, the efficiency being allowed in the application is lower.(2) its reversed leakage current of traditional Schottky diode Larger and temperature sensitive, traditional Schottky diode junction temperature is between 125 DEG C to 175 DEG C.

Traditional Schottky chip is epitaxial layer 7 in the top of substrate 8, in epitaxial layer 7 as shown in figure 8, including substrate 8 Surface be provided with schottky interface 6, several pressure rings 12 are arranged at intervals in the outer ring of schottky interface 6, in pressure ring 12 Surface be covered with insulating layer 11, the surface of schottky interface 6 is provided with anode metal layer 5, is provided in the bottom surface of substrate 8 Cathode metal layer 9.

It can be seen from the above, there are following defects on product structure and technique for the Schottky diode of the prior art: (1) it in old process, needs to depict the specification in the region of Schottky chip by conventional means in wafer, then passes through The means of cutting wafer obtain each Schottky chip monomer, however are reduction process costs and increase in old process Working efficiency, convenient for cutting, the equal specification of Schottky chip in each piece of wafer is identical and regular array, if you need to obtain other rule The Schottky chip of lattice then needs in addition to make the delineation that photolithography plate carries out Schottky chip in wafer, and will cause in this way need not The loss wanted then needs to depict in wafer if necessary to obtain the Schottky chip of different size in same wafer The chip of dimension, when carrying out wafer cutting, process can be relatively complicated in this way.(2) it needs to set in the outer ring of schottky interface Pressure ring 12 is set to improve chip pressure resistance performance, therefore technology difficulty greatly increases.(3) side that pressure ring 12 passes through ion implanting Formula is formed, and is obtained in 7 diffusion into the surface P+ type semiconductor of epitaxial layer, therefore be formed with arcwall face in the bottom of pressure ring 12, and curved The bent bigger potential lines of radian are closeer, and electric field strength is bigger, this affects the pressure-resistant performance of chip.(4) it is at least needed in prior art It wants third photo etching technique: being that photoetching is carried out to oxide layer on the surface of epitaxial layer 7 for the first time, it is convenient to pass through the techniques such as ion implanting Form pressure ring 12；Second of photoetching process is to be allowed to form contact hole to 11 photoetching of insulating layer, to be further formed Xiao Te Base interface 6；Third time photoetching is to carry out photoetching to anode metal layer 5, is allowed to positioned at the inside of insulating layer 11, therefore the prior art Middle production technology and chip solve complex.

Summary of the invention

Technical problem to be solved by the utility model is: overcoming the deficiencies of the prior art and provide a kind of by setting insulation Layer, instead of traditional pressure ring, therefore can carry out cutting out arbitrary size when carrying out wafer cutting at an arbitrary position Chip, improve the flexibility of chip cutting, meanwhile, reduce technology difficulty while ensure that the arbitrary structures of compressive resistance Schottky chip and Schottky diode.

The technical scheme adopted by the utility model to solve the technical problem is as follows: the Schottky chip of the arbitrary structures, packet The epitaxial layer for including substrate and substrate surface is provided with schottky interface in epi-layer surface, it is characterised in that: in Schottky core Any position on the outside of piece cuts to form cut surface, and cleavage plane surface is provided with insulating layer.

Preferably, anode metal layer and cathode gold are respectively arranged on the surface of the schottky interface and the bottom surface of substrate Belong to layer.

Preferably, the insulating layer is phosphoric acid glass layer.

Preferably, the cut surface is the shiny surface of vertical direction.

A kind of Schottky diode, it is characterised in that: the Schottky chip of the arbitrary structures is Schottky chip, Xiao Te The cathode and anode of Schottky chip are drawn in the both ends of base chip by connecting terminal respectively, are additionally provided with glue-line, glue-line includes In the outer ring of Schottky chip and connecting terminal inner end.

Compared with prior art, beneficial effect possessed by the utility model is:

In the Schottky chip of this arbitrary structures and Schottky diode, by the way that insulating layer is arranged, instead of traditional Pressure ring, therefore can be cut at an arbitrary position when carrying out wafer cutting, the flexibility of chip cutting is improved, together When, it reduces technology difficulty while ensure that compressive resistance.

In this Schottky diode, it can be cut by the cutting for needing to carry out wafer arbitrary size of Schottky chip The defects of cut surface corrosion and passivation is eliminated to after cutting using pickling chipping burr caused by when cutting, and form phosphoric acid glass protection Layer, coats one layer of silicon white glue (glue-line) in its chip cutting face by dewatered drying and is protected, ensure that Schottky core side Insulate the effect of pressure resistance, eliminates pressure ring in the prior art, therefore avoid in pressure ring and cause because of crooked radian position Pressure-resistant reduced performance defect, while in the fabrication process do not need carry out lithography step, make complex process degree and life Cost is produced to substantially reduce.

Detailed description of the invention

Fig. 1 is the Schottky diode structure schematic diagram of arbitrary structures.

Fig. 2 is Schottky chip structural schematic diagram.

Fig. 3 ~ Fig. 7 is the Schottky diode manufacturing flow chart of arbitrary structures.

Fig. 8 is prior art Schottky chip structural schematic diagram.

Wherein: 1, connecting terminal 2, soldering-tin layer 3, Schottky chip 4, glue-line 5, anode metal layer 6, Schottky circle Face 7, epitaxial layer 8, substrate 9, cathode metal layer 10, cut surface 11, insulating layer 12, pressure ring.

Specific embodiment

The most preferred embodiment of the utility model of Fig. 1 ~ 7,1 ~ 8 pair of the utility model is described further with reference to the accompanying drawing.

As shown in Figure 1, in the Schottky diode (hereinafter referred to as Schottky diode) of this arbitrary structures, including Xiao Te Base chip 3 passes through soldering-tin layer 2 in the two sides of Schottky chip 3 respectively and is fixed with connecting terminal 1, by connecting terminal 1 by this Xiao The cathode and anode of special based diode are drawn.The glue-line 4 to play a protective role is additionally provided in the outer ring of this Schottky diode, Glue-line 4 wraps up Schottky chip 3, soldering-tin layer 2 and connecting terminal 1 inside fixed with Schottky chip 3.

As shown in Fig. 2, Schottky chip 3 is cut by Schottky diode wafer, including substrate 8, in the upper of substrate 8 Side is epitaxial layer 7, and the surface of epitaxial layer 7 is provided with schottky interface 6.It is additionally provided with anode metal layer 5 and cathode metal layer 9, wherein anode metal layer 5 is covered on the surface of schottky interface 6, for drawing the anode of this Schottky chip 3, cathodic metal Layer 9 is covered on the bottom surface of substrate 8, for drawing the cathode of this Schottky chip 3.

In this Schottky chip, the pressure ring 12(for eliminating Schottky diode side in the prior art is shown in Fig. 8), because This is not necessarily to can according to need cutting arbitrary area with pressure ring 12 for boundary when cutting Schottky diode wafer, Therefore flexibility greatly improves, simultaneously because no setting is required pressure ring 12, therefore do not need the complexity of lithographic process steps It substantially reduces, after completing cutting, forms cut surface 10 in the outside of Schottky chip 3.

As shown in Fig. 3 ~ 7, Schottky diode as shown in Figure 1 is made, includes the following steps:

Step 1, epitaxial layer 7 is formed in the top of substrate 8, as shown in Figure 3.

Step 2, schottky interface 6 is formed on the surface of epitaxial layer 7, as shown in Figure 4.

Step 3, anode metal layer 5 and cathodic metal are respectively formed in the bottom surface on the surface of schottky interface 6 and substrate 8 Layer 9, as shown in Figure 5.

Step 4, Schottky diode wafer is cut, Schottky chip as shown in Figure 2 is obtained after the completion of cutting 3。

Step 5, one is fixed respectively by soldering-tin layer 2 at the anode metal layer 5 of Schottky chip 3 and cathode metal layer 9 A connecting terminal 1 draws the anode and cathode of Schottky chip 3, as shown in Figure 6.

Step 6, nitration mixture, phosphoric acid hydrogen peroxide, ammonia are successively used after completing the welding of Schottky chip 3 and connecting terminal 1 Water is successively handled the cut surface 10 of Schottky chip 3.It is handled by the bite of nitration mixture, makes Schottky chip 3 Cut surface 10 is smooth；By phosphoric acid dioxygen water process, so that forming the phosphoric acid glass (figure of one layer of protective effect at cut surface 10 In be not drawn into)；By the processing of ammonium hydroxide, the impurity chemically reacted before is rinsed well using the complexing of ammonium hydroxide, such as Fig. 7 It is shown.

Step 7, after dewatered drying, one layer of silicon white glue is applied in 10 outer ring of cut surface of Schottky chip 3 and is protected, Glue-line 4 is formed, Schottky diode as shown in Figure 1 is ultimately formed.

It can be seen from the above, in this Schottky diode, can by Schottky chip 3 need to carry out wafer it is arbitrarily large Small cutting, after cutting using pickling by 10 corrosion and passivation of cut surface eliminate cut when caused by chipping burr the defects of and formed Phosphoric acid glass protective layer is coated one layer of silicon white glue (glue-line 4) in its chip cutting face 10 by dewatered drying and is protected, and guarantees The effect of Schottky chip 3 side insulation pressure resistance, eliminates pressure ring 12 in the prior art, therefore avoid in pressure ring 12 Because of the defect of reduced performance pressure-resistant caused by crooked radian position, while not needing to carry out lithography step in the fabrication process, Substantially reduce complex process degree and production cost.

The above descriptions are merely preferred embodiments of the present invention, is not to make other forms to the utility model Limitation, any person skilled in the art is changed or is modified as possibly also with the technology contents of the disclosure above equivalent The equivalent embodiment of variation.But it is all without departing from the content of the technical scheme of the utility model, the technology according to the utility model is real Matter any simple modification, equivalent variations and remodeling to the above embodiments, still fall within the guarantor of technical solutions of the utility model Protect range.

Claims (4)

1. a kind of Schottky chip of arbitrary structures, the epitaxial layer (7) including substrate (8) and substrate (8) surface, in epitaxial layer (7) surface is provided with schottky interface (6), it is characterised in that: any position on the outside of Schottky chip (3), which cuts to be formed, cuts Face (10) is provided with insulating layer (11) on cut surface (10) surface；

The insulating layer (11) is phosphoric acid glass layer.

2. the Schottky chip of arbitrary structures according to claim 1, it is characterised in that: in the schottky interface (6) Surface and the bottom surface of substrate (8) be respectively arranged with anode metal layer (5) and cathode metal layer (9).

3. the Schottky chip of arbitrary structures according to claim 1, it is characterised in that: the cut surface (10) is perpendicular Histogram to shiny surface.

4. Schottky diode made of a kind of Schottky chip using the described in any item arbitrary structures of claim 1 ~ 3, It is characterized by: the Schottky chip of the arbitrary structures is Schottky chip (3), the both ends of Schottky chip (3) lead to respectively Cathode and anode that connecting terminal (1) draws Schottky chip (3) are crossed, is additionally provided with glue-line (4), glue-line (4) is included in Xiao Te The outer ring of base chip (3) and connecting terminal (1) inner end.