CN117810216A - 用于制造电子封装的方法 - Google Patents

用于制造电子封装的方法 Download PDF

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Publication number
CN117810216A
CN117810216A CN202211159326.XA CN202211159326A CN117810216A CN 117810216 A CN117810216 A CN 117810216A CN 202211159326 A CN202211159326 A CN 202211159326A CN 117810216 A CN117810216 A CN 117810216A
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China
Prior art keywords
region
electronic
roughness
electronic package
molding
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Inventor
宋相镐
卓铉洙
申东澈
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Jcet Xingke Jinpeng Korea Co ltd
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Jcet Xingke Jinpeng Korea Co ltd
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Application filed by Jcet Xingke Jinpeng Korea Co ltd filed Critical Jcet Xingke Jinpeng Korea Co ltd
Priority to CN202211159326.XA priority Critical patent/CN117810216A/zh
Priority to TW112131518A priority patent/TW202414718A/zh
Priority to KR1020230116323A priority patent/KR20240041233A/ko
Priority to US18/469,536 priority patent/US20240105538A1/en
Publication of CN117810216A publication Critical patent/CN117810216A/zh
Pending legal-status Critical Current

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Abstract

本申请提供了一种电子封装和用于制作电子封装的方法。电子封装包括基底;多个电子部件,所述多个电子部件安装在所述基底上;以及密封盖,所述密封盖用于密封所述基底和所述多个电子部件,其中,所述密封盖包括上表面,所述上表面具有第一区域和第二区域;并且其中所述第一区域具有第一粗糙度,所述第二区域具有大于所述第一粗糙度的第二粗糙度。

Description

用于制造电子封装的方法
技术领域
本申请总体上涉及半导体技术,更具体地,涉及一种半导体封装和用于制造电子封装的方法。
背景技术
系统级封装(SiP)是一种功能性电子系统或子系统,包括两个或更多个异质半导体管芯,例如逻辑芯片、存储器、集成无源器件(IPD)、RF滤波器、传感器、散热器或天线。模制底部填充(MUF)工艺用于制造底部填充和模制半导体器件的SiP。然而,在传统的MUF工艺中,当半导体封装件从模具中脱模时,半导体封装经常会出现裂纹和破损。
因此,需要一种用于制造具有提高产量的电子封装的方法。
发明内容
本申请的一个目的是提供一种用于制造电子封装的方法。
根据本申请实施例的一个方面,提供了一种电子封装,该电子封装包括基底;多个电子部件,安装在基底上;以及密封盖,用于密封基底和多个电子部件,其中,密封盖包括上表面,上表面具有第一区域和第二区域;并且其中第一区域具有第一粗糙度,第二区域具有大于第一粗糙度的第二粗糙度。
根据本申请实施例的另一个方面,提供了一种电子封装条,该电子封装条包括多个电子封装,每个电子封装包括基底;安装在所述基底上的多个电子部件;以及密封盖,用于密封所述基底和多个电子部件,其中,密封盖包括上表面,上表面具有第一区域和第二区域;并且其中第一区域具有第一粗糙度,第二区域具有大于第一粗糙度的第二粗糙度。
根据本申请实施例的一个方面,提供了一种用于制造电子封装的方法,该方法包括:将具有多个电子封装的基底条放置于底部模具上,其中每个所述电子封装包括基底及设置于所述基底上的多个电子部件;在所述电子封装上放置顶部模具,其中所述顶部模具具有用于容纳所述电子封装的模制腔,并且所述模制腔具有面向所述电子封装的模制表面,并且其中所述模制表面具有第一模制区域和第二模制区域,所述第一模制区域具有第一粗糙度,所述第二模制区域具有大于所述第一粗糙度的第二粗糙度;将密封材料注入所述模制腔内以形成封装所述基底和每个所述电子封装的所述多个电子部件的密封盖,其中所述密封盖包括具有对应于所述第一模制区域的第一区域和所述第二模制区域的第二区域;将每个用所述密封盖密封的所述电子封装从所述顶部模具和所述底部模具中分离;和通过分割将所述多个电子封装彼此分开,使得每个所述电子封装都被所述密封盖密封。
应当理解,前面的一般描述和下面的详细描述都只是示例性和说明性的,而不是对本发明的限制。此外,并入并构成本说明书一部分的附图说明了本发明的实施例并且与说明书一起用于解释本发明的原理。
附图说明
本文引用的附图构成说明书的一部分。附图中所示的特征仅图示了本申请的一些实施例,而不是本申请的所有实施例,除非详细描述另有明确说明,并且说明书的读者不应做出相反的暗示。
图1示出了根据本申请实施例的电子封装100的剖视图;
图2示出了图1具有多个电子封装100的电子封装条的俯视图;
图3示出了根据本申请实施例的电子封装200的剖视图;
图4A至4G示出了根据本申请实施例的制造一种电子封装方法的各个步骤;
图5示出了根据本申请实施例的用于电子封装制造方法的流程图。
在整个附图中将使用相同的附图标记来表示相同或相似的部分。
具体实施方式
本申请示例性实施例的以下详细描述参考了形成描述的一部分的附图。附图示出了其中可以实践本申请的具体示例性实施例。包括附图在内的详细描述足够详细地描述了这些实施例,以使本领域技术人员能够实践本申请。本领域技术人员可以进一步利用本申请的其他实施例,并在不脱离本申请的精神或范围的情况下进行逻辑、机械等变化。因此,以下详细描述的读者不应以限制性的方式解释该描述,并且仅以所附权利要求限定本申请的实施例的范围。
在本申请中,除非另有明确说明,否则使用单数包括了复数。在本申请中,除非另有说明,否则使用“或”是指“和/或”。此外,使用术语“包括”以及诸如“包含”和“含有”的其他形式的不是限制性的。此外,除非另有明确说明,诸如“元件”或“部件”之类的术语覆盖了包括一个单元的元件和部件,以及包括多于一个子单元的元件和部件。此外,本文使用的章节标题仅用于组织目的,不应解释为限制所描述的主题。
如本文所用,空间上相对的术语,例如“下方”、“下面”、“上方”、“上面”、“上”、“上侧”、“下侧”、“左侧”、“右侧”、“水平”、“竖直”、“侧边”等等,可以在本文中使用,以便于描述如附图中所示的一个元件或特征与另一元件或特征的关系。除了图中描绘的方向之外,空间相对术语旨在涵盖设备在使用或操作中的不同方向。该器件可以以其他方式定向(旋转90度或在其他方向),并且本文使用的空间相关描述符同样可以相应地解释。应该理解,当一个元件被称为“连接到”或“耦接到”另一个元件时,它可以直接连接到或耦接到另一个元件,或者可以存在中间元件。
如前所述,当半导体封装从用于模制工艺的模具中脱模时,半导体封装经常发生裂缝和破损。本申请的发明人已经发现,半导体封装与模具之间的界面粗糙度低,因此将半导体封装(尤其是用于半导体封装的密封盖)从模具中分离时可能需要很大的力,这可能导致半导体封装产生裂缝和破损问题。具体地,当密封盖从模具中脱模时,密封盖的两端可以从模具上脱离,但密封盖的中间部分仍会紧紧地粘在模具上,从而使电子封装在中间部分或靠近中间部分的产生裂缝或断裂。然而,激光打标通常需要在半导体封装的低粗糙度密封表面,因为光滑的表面可以提高激光打标的分辨率。通常,实施激光打标的表面需要相对较低的粗糙度,例如小于0.8μm。
为了解决上述问题,本申请的发明人构思了一种具有两种粗糙度的密封盖的新型电子封装,以及一种用于制作电子封装的方法,如下文更详细地阐述。
图1示出了根据本申请实施例的电子封装100的剖视图。
如图1所示,电子封装100包括具有上表面101a和下表面101b的基底101。在一些实施例中,基底101可以是印刷电路板(PCB),并且可以包括具有一个或多个介电层和一个或多个位于介电层之间并穿过介电层的导电层的再分布结构(RDS)。导电层可以定义焊盘、迹线和插座,电信号或电压可以通过它们在RDS上水平和垂直分布。在一些实施例中,RDS可以包括形成在基底101的上表面和下表面两者或任一者上的多个导电图案。
多个电子部件102可以设置在基底101的上表面101a上,其中至少一部分被密封盖105密封。此外,可以将多个凸块104附接到基底101以促进电子封装100与外部电子器件和系统的集成。具体地,多个电子部件102安装在基底101的上表面101a上,并由密封盖105密封。密封后,电子封装100可以通过激光打标而标记电子封装100的某些信息。例如,该信息可以标记在密封盖105的上表面上,包括电子封装100的规格和/或制造信息。
在实施例中,密封盖105的上表面具有第一区域1051和第二区域1052。第一区域1051具有第一粗糙度,第二区域1052具有大于第一粗糙度的第二粗糙度。具有两种不同粗糙度的密封盖105可以带来很多好处。例如,在MUF过程中,由于第一粗糙度低于第二粗糙度,因此当密封盖105从模具中脱模时,具有第二粗糙度的第二区域比第一区域更不容易粘附到模具上。以这种方式,更容易从模具中取出密封盖105和电子封装100,从而避免电子封装的破裂。需要说明的是,由于密封盖105的两种粗糙上表面是为了解决脱模时的开裂问题,因此该上表面应在一次成型和脱模过程中形成,而不是在两次或多次成型和脱模过程中单独形成。
在一些实施例中,如图1所示,第一区域1051相对于基底101高于第二区域1052,并且可选地,第一区域1051中密封第一电子部件102a的密封盖105的厚度可以大于在第二区域1052中密封第二电子部件102b的密封盖105的厚度。具有这种厚度变化的密封盖105的电子封装可以进一步补偿电子封装100的翘曲效应。在一些实施例中,密封盖105的上表面可以包括两个以上具有各自厚度的区域。
在一些实施例中,第一电子部件102a和/或第二电子部件102b可以包括多个半导体裸片、半导体器件和/或分立器件。例如,电子部件可以包括数字信号处理器(DSP)、微控制器、微处理器、网络处理器、电源管理处理器、音频处理器、视频处理器、RF电路、无线基带系统。芯片(SoC)处理器、传感器、存储器控制器、存储器装置、专用集成电路等。电子部件102也可以是无源器件,例如电容器、电感器或电阻器。在图1所示的例子中,第一电子部件102a可以包括两个具有较大外形尺寸的有源器件,而第二电子部件102b可以包括三个外形尺寸较小的无源器件,但本申请的范围不限于此。仅限于此。可以使用任何合适的表面安装技术将第一电子部件102a和第二电子部件102b安装在基底101的上表面101a上。
在一些实施例中,密封盖105通过诸如MUF工艺的注塑工艺形成,这可以减少或防止湿气和其他污染物影响电子封装的功能性和可靠性。在一些实施例中,密封盖105的密封材料可以由液态的一般模塑料树脂制成,例如环氧基树脂,但本申请的范围不限于此。在一些实施例中,密封材料是非导电材料并且提供结构支撑。
一个或多个激光标记可以形成在密封盖105的上表面的第一区域1051中,其可以具有小于0.8μm的第一粗糙度。在一些实施例中,第一粗糙度在0.2μm至0.4μm的范围内、在0.4μm至0.6μm的范围内或在0.6μm至0.8μm的范围内。在一些其他实施例中,第一粗糙度小于0.4μm。在一些实施例中,第二粗糙度大于1.8μm。相反,第二区域1052的第二粗糙度在1.8μm至3.2μm的范围内、在3.2μm至6.3μm的范围内或在6.3μm至12.5μm的范围内。在一些其他实施例中,第二粗糙度大于12.5μm。
在一些优选实施例中,在第一区域1051和第二区域1051之间的边界处,过渡区域106可以形成在密封盖105的上表面处。过渡区域106可以是例如圆形台阶等,其提供了从较高的第一区域1051到较低的第二区域1052的平滑过渡。这种平滑过渡可以减少或避免在第一区域1051和第二区域1051之间的边界处的应力集中,从而降低在过渡区域开裂的风险。
图2示出了具有图1所示的多个电子封装100的电子封装条的俯视图。
如图2所示,由于电子封装在电子封装条上排列成一排并连接在一起,所以密封盖105可以包括多个第一区域1051和多个第二区域1052。每个第一区域1051为矩形,每个第二区域1052与第一区域1051相邻并围绕第一区域1051。在一些实施例中,第一区域和第二区域可以以其他的排列方式布置。例如,第一区域和第二区域可以以具有多行和多列的阵列的形式彼此相交。可以理解的是,第一区域和第二区域的布置可以通过用于形成电子封装的密封盖的模具来配置。这些集成的电子封装以后可以相互分离。
图3示出了根据本申请另一实施例的电子封装200的剖面图。
如图3所示,与图1所示的电子封装100不同,电子封装200包括具有大致平坦的上表面的密封盖205。上表面具有第一粗糙度的第一区域2051和具有大于第一粗糙度的第二粗糙度的第二区域2052。在本实施例中,第一区域2051和第二区域2052具有大致相同的高度,即密封盖205在基底201上方具有均匀的厚度。
应当注意,尽管在图3中示出了两个区域2051和2052,但是可以在密封盖205的上表面上形成更多具有各自粗糙度的区域。此外,每个区域可以具有彼此不相邻的子区域。例如,当从电子封装200的顶部观察时,第二区域可以具有十字形状,并且十字形状的第二区域可以将第一区域分成四个子区域,每个子区域靠近电子封装200的上表面的角部。在一些其他实施例中,第二区域可以具有网格形状,其可以将第一区域分成多个块。从模具中分离具有这种分离或断开的第一区域的电子封装要容易得多。
在一些实施例中,第一区域2051可以比第二区域2052占据密封盖205的上表面的更小的区域,只要能够满足激光标记或其他类似目的所需的表面积即可。例如,第一区域2051可以占据密封盖205的顶表面的小于50%。在一些示例中,第一区域2051可以占据密封盖205的上表面的小于40%、小于30%、小于20%或小于10%。在一些实施例中,第一区域2051的面积可以小于密封盖205的上表面的5cm2,或者小于1cm2的密封盖205的上表面,甚至更小。
参照图4A至图4G,其示出了根据本发明的实施例的电子封装的制作方法的各个步骤。例如,该方法可用于制造图1所示的电子封装100或如图3所示的电子封装200。在下文中,将参照图4A至4G更详细地描述该方法。
如图4A所示,具有多个电子封装的基底条被放置在底部模具306上。在一些其他实施例中,每个多个电子封装可以占据基底条的一部分并且可以在之后对基底条执行分割工艺时,在相应的分割通道,例如锯道,与相邻的电子封装分开。可同时处理组装成条状的多个电子封装,以提升制造过程的生产效率。每个电子封装包括基底301和多个电子部件,包括第一电子部件302和第二电子部件303。
底部模具306可以是用于模制的模具的一部分,并且与作为模具的另一部分的顶部模具307相配合。在本申请的实施例中,底部模具306通常是平坦的以支撑同样平坦的基底条。在一些实施例中,底部模具可以是具有合适支撑和放置基底条的另一形状的载台。
之后,如图4B所示,顶部模具307置于底部模具307的上方并覆盖电子封装。顶部模具307和基底条形成通常密封的腔室,从而在该腔室中执行模制工艺。具体地,顶部模具307可以通过夹紧来压靠底部模具306,以避免顶部模具307和底部模具306之间基底条的相对移动。在实施例中,顶部模具307包括用于容纳电子封装的模制腔3071,并且模制腔3071的深度应大于电子封装的高度以确保整个模制腔3071内的流体连通。具体地,模制腔3071具有面向电子封装的模制表面。模制表面具有第一粗糙度的第一模制区域3072和第二粗糙度的第二模制区域3073,其中,第二粗糙度大于第一粗糙度。对于每个电子封装,第一模制区域3072对齐第一电子部件302,第二模制区域3073对齐第二电子部件303。此外,顶部模具307在第一模制区域3072中具有第一深度,其大于第二模制区域3073中的第二深度。在一些实施例中,顶部模具307可以是专门用于某些电子封装的整体结构。在一些其他实施例中,顶部模具307可以是允许改变模制区域3072和3073的组装结构。这样,第一模制区域3072的粗糙度/深度和第二模制区域3072的粗糙度/深度区域3073可以通过改变组装在模制腔3071内的模制表面来改变,使得符合不同因素形式标准或要求的各种类型的电子封装可以被顶部模具307密封而无需对整个顶部模具307进行重大改变.
在一些实施例中,模具包括顶部模具307和底部模具306,其可以由不锈钢、陶瓷、铜、铝或其他类型的材料形成。在一些实施例中,包括其配置和布局的模具的设计可以根据要设置在模具内的电子封装的尺寸和数量进行修改。
之后,如图4C所示,顶部模具307的侧壁设有进料口309,密封材料308可通过进料口309注入模制腔3071中。而且,顶部模具307上包括排气孔,用于在注入密封材料308期间释放空气,可以理解的是,顶部模具307的进料口和/或排气孔的配置可以根据一些实施例进行修改。具体地,密封材料308通过分配器通过进料口309注入模制腔3071中以在适当的温度和压力下密封基底301和其上的多个电子部件。由于所有电子封装可以同时模制在单独模制过程中,通过进料口309注入模制腔3071的密封材料308可以流动并完全填充模制腔3071。如图4D所示,密封材料308然后被烘烤和固化以形成用于每个电子封装的密封盖305,例如在热固化过程中。如此一来,每一密封盖305的上表面的粗糙度实质上等于模制腔3071的对应模制面的粗糙度,因为它们在注塑过程中彼此紧密地粘附。
如图4E所示,可以将具有各自被密封盖305覆盖的电子封装的基底条从模具中分离。具体地,顶部模具307还包括顶针311,顶针311插入顶部模具307的一侧。当密封盖305与顶部模具307分离时,顶针311可从模具307中突出并压靠在基底条的边缘部分上。这样,电子封装连同形成在其上的相应密封盖305一起从顶部模具307中被推离,从而从顶部模具307上脱模。在一些实施例中,模具307可以包括两个或多个顶针,它们插入顶部模具307的两端或顶部模具307的多个位置,用于同时将密封盖305从顶部模具307分离。例如,顶针311可以被压靠在基底条上形成的密封材料而不是压靠在基底条本身。
之后,如图4F所示,在将基底301与顶部模具307和底部模具306分离后,在每个基底301下方形成多个凸块,用于后续的半导体封装。在一些实施例中,可以使用以下工艺中的一种或任意组合来形成多个凸块304:蒸发、电解电镀、化学镀、球滴或丝网印刷工艺。
之后,具有电子封装的基底条可以被分割成单独的电子封装,如图4G所示,具体而言,例如,可以使用锯片或激光切割工具310在分割通道处对电子封装进行分割。此外,可以根据某些应用的需要,将激光标记添加到具有较低粗糙度的电子封装的相应表面上。
参照图5,其为根据本申请的一个实施例的电子封装的制作方法400的流程图。如图5所示,方法400可以从框410开始,将多个电子封装放置在底部模具上。然后,在方框420,将顶部模具放置在电子封装上以形成模制腔。模制腔具有朝向电子封装的模制表面,且模制表面具有第一粗糙度的第一模制区域和具有大于第一粗糙度的第二粗糙度的第二模制区域。在方框430处,将密封材料注入模具的模制腔中以在每个电子封装上形成密封盖。密封盖包括具有第一区域和第二区域的上表面,第一区域和第二区域分别对应于模制表面的第一模制区域和第二模制区域。在方框440,将具有相应密封盖的电子封装从顶部模具和底部模具中分离。可选地,电子封装可以通过分割而彼此分离,使得每个电子封装都被密封从而具有密封盖。可选地,在形成所述密封盖之后,还可以在所述密封该上形成电磁屏蔽干扰层(EMI)。
本文的讨论包括许多说明性的附图,这些附图显示了半导体器件的各个部分及其制造方法。为了说明清楚起见,这些图并未显示每个示例组件的所有方面。本文提供的任何示例器件和/或方法可以与本文提供的任何或所有其他器件和/或方法共享任何或所有特征。可以理解,在器件或方法中一者的上下文中描述的实施例对于其他器件或方法类似地有效。类似地,在器件的上下文中描述的实施例对于方法同样有效,反之亦然。在一个实施例的上下文中描述的特征可以相应地适用于其他实施例中相同或相似的特征。在一个实施例的上下文中描述的特征可以相应地适用于其他实施例,即使在这些其他实施例中没有明确描述。此外,在一个实施例的上下文中针对一个特征描述的增加和/或组合和/或替代可以相应地适用于其他实施例中的相同或相似特征。
本文已经参照附图描述了各种实施例。然而,显然可以对其进行各种修改和改变,并且可以实施另外的实施例,而不背离如所附权利要求中阐述的本发明的更广泛范围。此外,通过考虑说明书和本文公开的本发明的一个或多个实施例的实践,其他实施例对于本领域技术人员将是明显的。因此,本申请和本文中的实施例旨在仅被认为是示例性的,本发明的真实范围和精神由所附示例性权利要求的列表指示。

Claims (11)

1.一种电子封装,其特征在于,所述电子封装包括:
基底;
多个电子部件,所述多个电子部件安装在所述基底上;以及
密封盖,所述密封盖用于密封所述基底和所述多个电子部件,其中,所述密封盖包括上表面,所述上表面具有第一区域和第二区域;并且其中所述第一区域具有第一粗糙度,所述第二区域具有大于所述第一粗糙度的第二粗糙度。
2.根据权利要求1所述的电子封装,其特征在于,所述密封盖的所述上表面在所述第一区域具有激光标记。
3.根据权利要求1所述的电子封装,其特征在于,所述密封盖采用注塑成型。
4.根据权利要求1所述的电子封装,其特征在于,所述第一区域相对于所述基底高于所述第二区域。
5.根据权利要求1所述的电子封装,其特征在于,所述第一粗糙度小于0.8μm,所述第二粗糙度大于1.8μm。
6.一种电子封装条,所述电子封装条包括多个电子封装,每个所述电子封装包括:
基底;
多个电子部件,所述多个电子部件安装在所述基底上;以及
密封盖,所述密封盖用于密封所述基底和所述多个电子部件,其中,所述密封盖包括上表面,所述上表面具有第一区域和第二区域;并且其中所述第一区域具有第一粗糙度,所述第二区域具有大于所述第一粗糙度的第二粗糙度。
7.根据权利要求6所述的电子封装条,其特征在于,所述密封盖的所述上表面在所述第一区域具有激光标记,所述密封盖采用注塑成型。
8.一种用于制造电子封装的方法,所述方法包括:
将具有多个电子封装的基底条放置于底部模具上,其中每个所述电子封装包括基底及设置于所述基底上的多个电子部件;
在所述电子封装上放置顶部模具,其中所述顶部模具具有用于容纳所述电子封装的模制腔,所述模制腔具有面向所述电子封装的模制表面,并且其中所述模制表面具有第一模制区域和第二模制区域,所述第一模制区域具有第一粗糙度,所述第二模制区域具有大于所述第一粗糙度的第二粗糙度;
将密封材料注入所述模制腔内以形成封装所述基底和每个所述电子封装的所述多个电子部件的密封盖,其中所述密封盖包括具有对应于所述第一模制区域的第一区域和所述第二模制区域的第二区域;
将每个用所述密封盖密封的所述电子封装从所述顶部模具和所述底部模具中分离;和
通过分割将所述多个电子封装彼此分开,使得每个所述电子封装都被对应的密封盖密封。
9.根据权利要求8所述的方法,其特征在于,所述顶部模具在所述第一模制区域具有第一深度,并且,所述第一深度大于在所述第二模制区域的第二深度。
10.根据权利要求8所述的方法,其特征在于,所述第一粗糙度小于0.8μm,所述第二粗糙度大于1.8μm。
11.根据权利要求8所述的方法,其特征在于,所述方法还包括:在所述密封盖的所述上表面的所述第一区域形成激光标记。
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