CN117769761A - Power module and power conversion device - Google Patents
Power module and power conversion device Download PDFInfo
- Publication number
- CN117769761A CN117769761A CN202280053221.8A CN202280053221A CN117769761A CN 117769761 A CN117769761 A CN 117769761A CN 202280053221 A CN202280053221 A CN 202280053221A CN 117769761 A CN117769761 A CN 117769761A
- Authority
- CN
- China
- Prior art keywords
- power module
- circuit
- wall portion
- axis direction
- spacer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 title claims description 40
- 239000000758 substrate Substances 0.000 claims abstract description 69
- 230000002093 peripheral effect Effects 0.000 claims abstract description 36
- 239000004065 semiconductor Substances 0.000 claims abstract description 20
- 230000017525 heat dissipation Effects 0.000 claims abstract description 12
- 230000005855 radiation Effects 0.000 claims abstract description 5
- 125000006850 spacer group Chemical group 0.000 claims description 64
- 229910000679 solder Inorganic materials 0.000 claims description 39
- 239000000463 material Substances 0.000 claims description 17
- 238000002844 melting Methods 0.000 claims description 9
- 230000008018 melting Effects 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 5
- 239000003566 sealing material Substances 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 abstract description 49
- 238000007789 sealing Methods 0.000 abstract description 17
- 229920005989 resin Polymers 0.000 abstract description 16
- 239000011347 resin Substances 0.000 abstract description 16
- 230000008646 thermal stress Effects 0.000 abstract description 12
- 238000000034 method Methods 0.000 abstract description 9
- 239000004020 conductor Substances 0.000 description 25
- 230000004048 modification Effects 0.000 description 22
- 238000012986 modification Methods 0.000 description 22
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 16
- 229910052802 copper Inorganic materials 0.000 description 16
- 239000010949 copper Substances 0.000 description 16
- 230000000694 effects Effects 0.000 description 16
- 239000000853 adhesive Substances 0.000 description 12
- 230000001070 adhesive effect Effects 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 229910000838 Al alloy Inorganic materials 0.000 description 4
- 239000004734 Polyphenylene sulfide Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 238000005219 brazing Methods 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 238000005304 joining Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000005192 partition Methods 0.000 description 4
- 229920000069 polyphenylene sulfide Polymers 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 239000000945 filler Substances 0.000 description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229920001707 polybutylene terephthalate Polymers 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229920000106 Liquid crystal polymer Polymers 0.000 description 2
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 2
- -1 Poly Butylene Terephthalate Polymers 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 229910000570 Cupronickel Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- IZJSTXINDUKPRP-UHFFFAOYSA-N aluminum lead Chemical compound [Al].[Pb] IZJSTXINDUKPRP-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 229920006332 epoxy adhesive Polymers 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Provided is a technique capable of reducing thermal stress caused by bonding of a heat dissipation member and an insulating substrate and suppressing warpage of the heat dissipation member due to the thermal stress. The power module (202) is provided with: a heat radiation member (14) having a peripheral wall portion (15) and a recess (19), wherein the recess (19) is formed on the inner peripheral side of the peripheral wall portion (15) and is recessed downward; at least one ceramic substrate (10) bonded into the recess (19); a plurality of semiconductor elements mounted on at least one ceramic substrate (10); a case (5) fixed along the upper end of the peripheral wall (15) and filled with a sealing resin (7); and a circuit forming member including electrode plates (63, 64, 65), wherein the electrode plates (63, 64, 65) connect the plurality of semiconductor elements and the semiconductor element to at least one ceramic substrate (10), and the thickness of the peripheral wall portion (15) of the heat dissipating member (14) in the up-down direction (Z-axis direction) is thicker than the thickness of the bottom wall portion (16) forming the bottom surface of the recess (19) in the up-down direction (Z-axis direction).
Description
Technical Field
The present disclosure relates to a power module and a power conversion device.
Background
Power modules are mounted on all products ranging from industrial equipment to home appliances and information terminals, and are becoming popular in all situations of power generation, power transmission and power regeneration with the development of environmental problems. Among them, a power module mounted in an electric vehicle is required to have high heat radiation performance and high flatness in order to reliably fasten the power module to a cooling water jacket.
Further, a power module is also required to be applicable to a packaging form of SiC semiconductor which is highly likely to become a mainstream in the future in terms of high operating temperature and excellent efficiency.
For example, patent document 1 discloses a power module including a metal base (corresponding to a heat radiating member) having heat radiating fins.
Prior art literature
Patent literature
Patent document 1: international publication No. 2013/141154
Disclosure of Invention
Problems to be solved by the invention
In the power module, since a large current and a high voltage are to be handled, a ceramic substrate having high insulation performance and high heat dissipation performance is used as an insulation substrate, but aluminum nitride and silicon nitride, which are raw materials of a base material constituting the ceramic substrate, have significantly small linear expansion coefficients compared with copper and aluminum, which are used as raw materials of a heat dissipation member. Therefore, when the heat dissipation member is bonded to the insulating substrate, a large thermal stress is generated in the bonded portion, and warpage of the heat dissipation member and cracks during temperature cycling are likely to occur.
In the technique described in patent document 1, the following structure is formed: v-shaped grooves are formed in a metal base on which a plurality of ceramic substrates are mounted, and heat generated in semiconductor elements on the respective ceramic substrates does not interfere with each other. Therefore, although the effect of reducing the thermal stress by the reduction of the rigidity of the metal base can be expected, on the contrary, there is a concern that the warpage of the metal base becomes large.
Accordingly, an object of the present disclosure is to provide a technique capable of reducing thermal stress caused by joining of a heat dissipating member and an insulating substrate and suppressing warpage of the heat dissipating member due to the thermal stress.
Means for solving the problems
The power module of the present disclosure is provided with: a heat radiation member having a peripheral wall portion and a recess portion formed on an inner peripheral side of the peripheral wall portion and recessed downward; at least one insulating substrate bonded into the recess; a plurality of semiconductor elements mounted on at least one of the insulating substrates; a case fixed along an upper end of the peripheral wall portion, the case being filled with a sealing material; and a circuit forming member including electrode plates that connect the plurality of semiconductor elements and the semiconductor element to at least one of the insulating substrates, wherein a thickness of the peripheral wall portion of the heat dissipating member in a vertical direction is thicker than a thickness of a bottom wall portion forming a bottom surface of the recess in the vertical direction.
Effects of the invention
According to the present disclosure, since the bottom wall portion of the heat radiating member, which forms the bottom surface of the recess to which the insulating substrate is bonded, has a thickness in the up-down direction smaller than that of the peripheral wall portion, thermal stress caused by bonding the heat radiating member and the insulating substrate can be reduced. On the other hand, the thickness of the peripheral wall portion of the heat radiating member in the up-down direction is thicker than the thickness of the bottom wall portion in the up-down direction, so that the rigidity of the heat radiating member can be ensured. This can suppress warpage of the heat sink member due to thermal stress caused by bonding of the heat sink member and the insulating substrate.
The objects, features, aspects and advantages of the present disclosure will become more apparent from the following detailed description and the accompanying drawings.
Drawings
Fig. 1 is a cross-sectional view of a power module (6 in 1) according to embodiment 1.
Fig. 2 is a plan view of the power module (6 in 1) according to embodiment 1.
Fig. 3 is a schematic diagram showing a manufacturing process of the power module (6 in 1) of embodiment 1.
Fig. 4 is a schematic diagram showing another example of the manufacturing process of the power module (6 in 1) according to embodiment 1.
Fig. 5 is a plan view of a power module (6 in 1) and a cross-sectional view of a spacer according to modification 1 of embodiment 1.
Fig. 6 is a cross-sectional view of a power module (6 in 1) according to modification 2 of embodiment 1.
Fig. 7 is a plan view of a power module (6-1) according to modification 2 of embodiment 1.
Fig. 8 is a cross-sectional view of the power module (6 in 1) according to embodiment 2.
Fig. 9 is a plan view of the power module (6 in 1) according to embodiment 2.
Fig. 10 is a cross-sectional view of a power module (6 in 1) according to a modification of embodiment 2.
Fig. 11 is a plan view of a power module (6 in 1) according to embodiment 3.
Fig. 12 is a block diagram showing the configuration of a power conversion system to which the power conversion device of embodiment 4 is applied.
Detailed Description
Embodiment 1 >
Structure
Hereinafter, embodiment 1 will be described with reference to the drawings. Fig. 1 is a cross-sectional view of a power module 202 (6 in 1) according to embodiment 1. Fig. 2 is a plan view of a power module 202 (6 in 1) according to embodiment 1. In fig. 2, the sealing resin 7 is omitted for easy viewing of the drawing.
In fig. 1, the X direction, the Y direction, and the Z direction are perpendicular to each other. The X direction, Y direction, and Z direction shown in the following figures are also perpendicular to each other. In the following, a direction including an X direction and an-X direction which is a direction opposite to the X direction is also referred to as an "X-axis direction". In the following, a direction including the Y direction and the-Y direction which is a direction opposite to the Y direction is also referred to as "Y axis direction". In the following, a direction including the Z direction and the-Z direction which is a direction opposite to the Z direction is also referred to as "Z-axis direction".
As shown in fig. 1 and 2, the power module 202 includes the heat dissipation member 14, two ceramic substrates 10, six IGBTs (Insulated Gate Bipolar Transistor: insulated gate bipolar transistors) 21, six diodes 22, a case 5, a signal terminal 61, an external terminal 62, an electrode plate 63, an N-side electrode plate 64, and a P-side electrode plate 65. Here, the ceramic substrate 10 corresponds to an insulating substrate, and the IGBT21 and the diode 22 correspond to semiconductor elements.
The heat radiating member 14 is formed of an aluminum alloy, and includes a peripheral wall portion 15, a bottom wall portion 16, a spacer portion 17, a plurality of cooling pins 18, and a recess 19.
The bottom wall portion 16 is formed in a rectangular shape when viewed from the Z direction. The peripheral wall portion 15 is formed in a rectangular frame shape as viewed from the Z direction, and surrounds the outer peripheral side of the bottom wall portion 16. The length of the peripheral wall 15 in the front-rear direction (Y-axis direction) was 90mm, the length in the left-right direction (X-axis direction) was 70mm, and the thickness in the up-down direction (Z-axis direction) was 4mm.
The recess 19 is formed on the inner peripheral side of the peripheral wall 15, and is formed in a shape recessed downward (-Z direction). Specifically, the recess 19 is formed by the inner peripheral surface of the peripheral wall portion 15 and the upper surface (Z-direction surface) of the bottom wall portion 16.
The spacer 17 extends in the front-rear direction (Y-axis direction) and is provided at the center of the recess 19 in the left-right direction (X-axis direction). The spacer 17 is formed integrally with the bottom wall 16 from an aluminum alloy. The thickness of the spacer 17 in the up-down direction (Z-axis direction) is formed uniformly. A gap is formed between the spacer 17 and the electrode plate 63 so that the upper end (end in the Z direction) of the spacer 17 is not in contact with the electrode plate 63 located above the spacer 17.
The recess 19 is divided into two in the left-right direction (X-axis direction) by the partition 17. The length of the left portion (-X-direction portion) of the recess 19 in the front-rear direction (Y-axis direction) was 61mm, the length in the left-right direction (X-axis direction) was 31mm, and the depth in the up-down direction (Z-axis direction) was 3mm. On the other hand, the length of the right portion (portion in the X-direction) of the concave portion 19 in the front-rear direction (Y-axis direction) was 61mm, the length in the left-right direction (X-axis direction) was 34mm, and the depth in the up-down direction (Z-axis direction) was 3mm.
A P-side electrode plate 65 is disposed in a left portion (-X-direction portion) of the recess 19, and an N-side electrode plate 64 is disposed in a right portion (X-direction portion) of the recess 19. Hereinafter, the left portion (-X-direction portion) of the concave portion 19 is referred to as P-side, and the right portion (X-direction portion) of the concave portion 19 is referred to as N-side.
The thickness of the spacer 17 in the up-down direction (Z-axis direction) was 4mm, which is the same as the thickness of the peripheral wall 15 in the up-down direction (Z-axis direction). The spacer 17 is not necessarily required, and the spacer 17 may be omitted when the recess 19 is not required to be divided into two. In this case, only one ceramic substrate 10 may be provided. Further, two or more spacers 17 may be provided to divide the recess 19 into three or more.
180 cooling pins 18 protruding downward (-Z direction) are disposed on the lower surface (-Z direction surface) of the bottom wall portion 16. The diameter of the cooling pin 18 was 2mm, and the length in the up-down direction (Z-axis direction) was 5mm.
The entire surface of the heat sink 14 is plated with nickel. The upper surface (Z-direction surface) of the bottom wall portion 16 is divided into two by the spacer 17, and the two ceramic substrates 10 are bonded to the portions formed by dividing into two by the solder 30.
Each ceramic substrate 10 includes a base material 11 made of aluminum nitride, a back surface conductor layer 12 made of copper, and a front surface conductor layer 13 made of copper. The back surface conductor layer 12 is formed by brazing film on the back surface (-Z-direction surface) of the base material 11, and the front surface conductor layer 13 is formed by brazing film on the front surface (Z-direction surface) of the base material 11.
The length of the base material 11 disposed on the P side in the front-rear direction (Y-axis direction) was 60mm, the length in the left-right direction (X-axis direction) was 30mm, and the thickness in the up-down direction (Z-axis direction) was 0.64mm. The length of the base material 11 disposed on the N side in the front-rear direction (Y-axis direction) was 60mm, the length in the left-right direction (X-axis direction) was 33mm, and the thickness in the up-down direction (Z-axis direction) was 0.64mm.
The back surface conductor layer 12 disposed on the P side had a length of 56mm in the front-back direction (Y-axis direction), a length of 26mm in the left-right direction (X-axis direction), and a thickness of 0.8mm in the up-down direction (Z-axis direction). The back surface conductor layer 12 arranged on the N side had a length of 56mm in the front-back direction (Y-axis direction), a length of 29mm in the left-right direction (X-axis direction), and a thickness of 0.8mm in the up-down direction (Z-axis direction).
The front conductor layer 13 disposed on the P side had a length of 56mm in the front-rear direction (Y-axis direction), a length of 26mm in the left-right direction (X-axis direction), and a thickness of 0.8mm in the up-down direction (Z-axis direction). On the N side, three front surface conductor layers 13 are formed in an aligned manner in the Y axis direction. The front conductor layer 13 disposed on the N side had a length of 17mm in the front-rear direction (Y-axis direction), a length of 29mm in the left-right direction (X-axis direction), and a thickness of 0.8mm in the up-down direction (Z-axis direction).
Three sets of IGBTs 21 and diodes 22 are mounted on the upper surface (Z-direction surface) of the front conductor layer 13 disposed on the P side via solder 30. The content of the solder 30 was 96.5% tin, 3% silver, and 0.5% copper, and the melting point of the solder 30 was 217 ℃.
The IGBT21 is made of silicon, the length of the IGBT21 in the front-rear direction (Y-axis direction) is 15mm, the length in the left-right direction (X-axis direction) is 15mm, and the thickness in the up-down direction (Z-axis direction) is 0.2mm.
The diode 22 is made of silicon, the length of the diode 22 in the front-rear direction (Y-axis direction) is 15mm, the length in the left-right direction (X-axis direction) is 10mm, and the thickness in the up-down direction (Z-axis direction) is 0.2mm.
The front electrodes (not shown) of the three groups of IGBTs 21 and diodes 22 are bonded to three electrode plates 63 made of copper using solder 30. The thickness of the electrode plate 63 in the up-down direction (Z-axis direction) was 0.5mm.
The case 5 is formed of PPS (Poly Phenylene Sulfide (polyphenylene sulfide) resin having a heat-resistant temperature of 280 ℃) in a rectangular frame shape when viewed from the Z direction, and is bonded along the upper end (Z-direction end) of the peripheral wall portion 15 of the heat radiating member 14 with an adhesive (not shown). The length of the housing 5 in the front-rear direction (Y-axis direction) was 90mm, the length in the left-right direction (X-axis direction) was 70mm, and the thickness in the up-down direction (Z-axis direction) was 6mm.
Three external terminals 62 made of copper are insert-molded at portions of the housing 5 corresponding to the P side, and a P-side electrode plate 65 made of copper is formed for each external terminal insert. The three external terminals 62 correspond to the U-phase circuit, the V-phase circuit, and the W-phase circuit, respectively. The three electrode plates 63 are disposed so as to span the adjacent ceramic substrates 10, and one ends of the three electrode plates 63 are joined to the three external terminals 62 using the solder 30, respectively.
The other end portions of the three electrode plates 63 intersect the spacer 17 and extend to one side of the ceramic substrate 10 disposed on the N side. Specifically, the other end portions of the three electrode plates 63 pass above the spacer 17 (in the Z direction), and are bonded to the three front surface conductor layers 13 arranged on the N side using the solder 30. The thicknesses of the external terminal 62 and the P-side electrode plate 65 in the up-down direction (Z-axis direction) were 0.5mm.
The P-side common drain is bonded to the copper P-side electrode plate 65 using solder (not shown). The thickness of the P-side electrode plate 65 in the up-down direction (Z-axis direction) was 0.5mm.
On the other hand, a set of the IGBT21 and the diode 22 is mounted on each of the upper surfaces (Z-direction surfaces) of the three front conductor layers 13 disposed on the N side by the solder 30.
At a portion of the housing 5 corresponding to the N side, an N-side electrode plate 64 made of copper is formed for each external terminal insert. The front electrodes (not shown) of the three groups of IGBTs 21 and diodes 22 are bonded to the N-side electrode plate 64 using solder 30. The thickness of the N-side electrode plate 64 in the up-down direction (Z-axis direction) was 0.5mm.
Further, six copper signal terminals 61 are insert-molded for each external terminal in the portions of the housing 5 corresponding to the P-side and the N-side. The signal electrode 211 of the IGBT21 is connected to the signal terminal 61 via the lead 41 made of aluminum. The thickness of the signal terminal 61 in the up-down direction (Z-axis direction) was 0.5mm, and the diameter of the lead 41 was 0.15mm.
Here, the electrode plate 63, the N-side electrode plate 64, and the P-side electrode plate 65 correspond to circuit forming means for connecting the plurality of semiconductor elements and the semiconductor element to the ceramic substrate 10, respectively. On the P-side and N-side, the IGBT21 and the diode 22 are connected to form a U-phase circuit, a V-phase circuit, and a W-phase circuit.
The recess 19 of the heat radiating member 14 and the inside of the case 5 are insulated and sealed by filling with the sealing resin 7. The sealing resin 7 is an epoxy resin in which a silica filler is dispersed. Here, the sealing resin 7 corresponds to a sealing material.
< manufacturing Process >)
Next, a process for manufacturing the power module 202 will be described with reference to fig. 3 (a) to (d). Fig. 3 (a) to (d) are schematic diagrams showing the manufacturing process of the power module 202 (6 in 1) according to embodiment 1.
As shown in fig. 3 a, a sheet-like solder 30 having a thickness of 0.3mm in the up-down direction (Z-axis direction) and a ceramic substrate 10 are disposed on the upper surface (Z-direction surface) of the bottom wall portion 16 of the heat sink 14, a sheet-like solder 30 having a thickness of 0.2mm in the up-down direction (Z-axis direction) and IBGT21 and diode 22 are disposed on the front surface conductor layer 13 of the ceramic substrate 10 (Z-direction), and a sheet-like solder 30 having a thickness of 0.2mm in the up-down direction (Z-axis direction) is disposed on each front surface electrode (not shown) in a positioning manner.
The assembly was heated to 260 c in a reflow oven to melt the solder 30, thereby performing solder bonding as shown in fig. 3 (b).
Next, as shown in fig. 3 (c), the case 5 having the signal terminals 61, the external terminals 62, and the like embedded therein is bonded to the heat sink 14 using an adhesive (not shown). After the electrode plates 63 are positioned and arranged, the assembly is heated to 260 ℃ in a reflow oven to melt and join the solder 30 on the IBGT21 and the diode 22. In this case, the raw material of the case 5 is PPS, and the heat-resistant temperature thereof is 280 ℃, so that the case 5 has heat resistance to the highest temperature of 260 ℃ of the reflow oven. When the melting point of the solder 30 is higher than that described in the above description and the raw material of the case 5 is PBT (Poly Butylene Terephthalate (polybutylene terephthalate): heat resistant temperature is 220 ℃ or lower) such that the content of the solder 30 is 95% tin, 5% antimony, and 240 ℃ or higher, there is a concern that the case 5 is deformed by heat at the time of soldering, and therefore, the heat resistant temperature of the case 5 needs to be at least the melting point of the solder 30 or higher.
Next, as shown in fig. 3 (d), the signal electrode 211 (see fig. 2) of the IGBT21 is bonded to the signal terminal 61 using the lead 41. Then, the sealing resin 7 in a liquid state was injected into the inside of the case 5, and was cured by heating in an oven at 150 ℃ for one hour, thereby completing the sealing. Thereby completing the power module 202.
Alternatively, the power module 202 may be manufactured by using the methods (a) to (c) of fig. 4 instead of the methods (a) to (d) of fig. 3. Fig. 4 (a) to (c) are schematic diagrams showing another example of the manufacturing process of the power module 202 (6 in 1) according to embodiment 1.
As shown in fig. 4a, a sheet-like solder 30 having a thickness of 0.3mm in the up-down direction (Z-axis direction) and a ceramic substrate 10 are disposed on the upper surface (Z-direction surface) of the bottom wall portion 16 of the heat sink 14, a sheet-like solder 30 having a thickness of 0.2mm in the up-down direction (Z-axis direction) and IBGT21 and diode 22 are disposed on the front surface conductor layer 13 of the ceramic substrate 10 (Z-direction), and a sheet-like solder 30 having a thickness of 0.2mm in the up-down direction (Z-axis direction) is disposed on each front surface electrode (not shown) in a positioning manner. Further, the mounting electrode plate 63 and the N-side electrode plate 64 are positioned thereon (Z direction).
The assembly was heated to 260 c in a reflow oven to melt the solder 30, thereby performing solder bonding as shown in fig. 4 (b).
Next, as shown in fig. 4 (c), the case 5 having the signal terminals 61, the external terminals 62, and the like embedded therein is bonded to the heat sink 14 using an adhesive (not shown). The electrode plate 63 was bonded to the external terminal 62 using the conductive adhesive 31 (curing condition 180 ℃ C., 1 h).
The signal electrode 211 (see fig. 2) of the IGBT21 is bonded to the signal terminal 61 using the lead 41. Then, the sealing resin 7 in a liquid state was injected into the inside of the case 5, and was cured by heating in an oven at 150 ℃ for one hour, thereby completing the sealing. Thereby completing the power module 202.
The electrode plate 63 and the N-side electrode plate 64 are mounted and solder-bonded before the case 5 is mounted on the assembly, and the assembly may be placed in the reflow oven once. Further, by joining the electrode plate 63 and the external terminal 62 using the conductive adhesive 31, a case raw material having a low heat-resistant temperature can be used. Here, the conductive adhesive 31 is used for bonding the electrode plate 63 and the external terminal 62, but a low-temperature solder such as bi—sn (melting point 139 ℃) or a room-temperature bonding process such as TIG welding or ultrasonic bonding may be used.
< Effect >
As described above, the power module 202 of embodiment 1 includes: a heat radiation member 14 having a peripheral wall portion 15 and a recess 19, the recess 19 being formed on the inner peripheral side of the peripheral wall portion 15 and recessed downward; at least one ceramic substrate 10 bonded into the recess 19; a plurality of semiconductor elements mounted on at least one ceramic substrate 10; a case 5 fixed along the upper end of the peripheral wall 15 and filled with a sealing resin 7; and a circuit forming member including electrode plates 63, 64, 65, wherein the electrode plates 63, 64, 65 connect the plurality of semiconductor elements and the semiconductor element to the at least one ceramic substrate 10, respectively, and the thickness of the peripheral wall portion 15 of the heat dissipating member 14 in the up-down direction (Z-axis direction) is thicker than the thickness of the bottom wall portion 16 forming the bottom surface of the recess 19 in the up-down direction (Z-axis direction).
Therefore, since the bottom wall portion 16 of the heat radiating member 14, which forms the bottom surface of the recess 19 to which the ceramic substrate 10 is joined, has a thickness in the up-down direction (Z-axis direction) that is thinner than the thickness in the up-down direction (Z-axis direction) of the peripheral wall portion 15, thermal stress caused by joining the heat radiating member 14 and the ceramic substrate 10 can be reduced. On the other hand, since the thickness of the peripheral wall portion 15 of the heat radiating member 14 in the up-down direction (Z-axis direction) is thicker than the thickness of the bottom wall portion 16 in the up-down direction (Z-axis direction), the rigidity of the heat radiating member 14 can be ensured. This can suppress warpage of the heat sink 14 due to thermal stress caused by joining the heat sink 14 and the ceramic substrate 10.
As described above, by suppressing the warpage of the heat sink 14, the power module 202 can be used for a long period of time, and reduction in the energy consumption and reduction in the environmental load in the production process can be achieved.
Further, since the at least one ceramic substrate 10 and the heat radiating member 14 are joined by the solder 30 having a melting point lower than the heat resistant temperature of the case 5, deformation of the case 5 due to heat at the time of soldering can be suppressed.
Further, since the electrode plate 63 and the external terminal 62 formed in the case 5 are bonded by the conductive adhesive 31 having a lower heating temperature than the solder 30, a material having a lower heat resistance temperature can be used as a material of the case 5.
At least one ceramic substrate 10 is provided with a plurality of ceramic substrates 10, and a spacer 17 is provided on the heat dissipation member 14, and the spacer 17 is disposed between adjacent ceramic substrates 10 to divide the recess 19 into a plurality of sections.
Therefore, by providing the spacer 17 in the recess 19, the rigidity of the bottom wall portion 16 of the heat sink 14 can be improved, and therefore, the warpage of the heat sink 14 can be further suppressed.
Modification of embodiment 1
Next, a modification of embodiment 1 will be described. Fig. 5 (a) is a plan view of a power module 202 (6-1) according to modification 1 of embodiment 1, and fig. 5 (b) is a cross-sectional view of a spacer 171.
As shown in fig. 5 (a), the power module 202 includes a spacer 171 instead of the spacer 17. The shape of the upper end (end in the Z direction) of the spacer 171 is different from the shape of the upper end (end in the Z direction) of the spacer 17.
The vertical direction (Z-axis direction) of the spacer 17 is uniform, whereas the vertical direction (Z-axis direction) of the portion of the spacer 171 intersecting the electrode plate 63 is formed to be thinner than the vertical direction (Z-axis direction) of the other portions. Specifically, the height position (Z-axis direction position) of the upper end (Z-direction end) of the portion of the spacer 171 intersecting the electrode plate 63 is formed lower than the height position (Z-axis direction position) of the upper end (Z-direction end) of the other portion.
Here, the portions of the partition 171 intersecting the electrode plate 63 are portions 171b of the partition 171 other than the two end portions 171a in the extending direction, and the other portions are the two end portions 171a in the extending direction of the partition 171.
In modification 1 of embodiment 1, the circuit forming members are arranged so as to span the adjacent ceramic substrates 10, and the vertical (Z-direction) thickness of the portions of the spacers 171 intersecting the circuit forming members is smaller than the vertical (Z-direction) thickness of the other portions.
Therefore, the rigidity of the heat sink 14 can be ensured by minimizing the portion of the spacer 171 where the thickness in the up-down direction (Z direction) is reduced to only the required portion while sufficiently securing the insulation distance between the spacer 171 and the electrode plate 63.
Fig. 6 is a cross-sectional view of a power module 202 (6 in 1) according to modification 2 of embodiment 1. Fig. 7 is a plan view of a power module 202 (6 in 1) according to modification 2 of embodiment 1. In fig. 7, the sealing resin 7 is omitted for easy viewing of the drawing.
In embodiment 1, the electrode plate 63, the N-side electrode plate 64, and the P-side electrode plate 65 are used as the circuit forming members, but as shown in fig. 6 and 7, the lead wire 42 made of aluminum may be used as the circuit forming members. The diameter of the lead 42 is 0.4mm.
In this case, an N-side terminal 64a and a P-side terminal 65a are provided instead of the N-side electrode plate 64 and the P-side electrode plate 65. A conductor layer 131 is formed on the front conductor layer 13 of the ceramic substrate 10 disposed on the N side, and the conductor layer 131 is concentrated on the leads 42 connected to the front electrodes of the IGBT21 and the diode 22, and the conductor layer 131 and the N side terminal 64a are connected by the leads 42. The front conductor layer 13 of the ceramic substrate 10 disposed on the P side is connected to the P side terminal 65a by the lead 42.
When a circuit is formed using the lead 42, even if the shape or size of the IGBT21 and the diode 22 to be mounted changes, the circuit can be handled by changing the program of a wire bonder (wire bonder). In addition, in the case where the circuit is formed using the lead wire 42, the stress at the joint portion is lower than in the case where the circuit is formed using the electrode plate 63, the N-side electrode plate 64, and the P-side electrode plate 65, and therefore, the circuit forming member can be sealed with soft silicone rubber as the sealing resin 7.
Embodiment 2 >
Next, the power module 202 of embodiment 2 will be described. Fig. 8 is a cross-sectional view of power module 202 (6 in 1) according to embodiment 2. Fig. 9 is a plan view of a power module 202 (6 in 1) according to embodiment 2. In fig. 9, the sealing resin 7 is omitted for easy viewing of the drawing. In embodiment 2, the same components as those described in embodiment 1 are denoted by the same reference numerals, and description thereof is omitted.
As shown in fig. 8 and 9, in embodiment 2, the power module 202 includes a spacer 51 instead of the spacer 17, and the spacer 51 is integrally formed with the housing 5. Specifically, the spacer 51 is formed to connect the front wall (-Y-direction wall) and the rear wall (Y-direction wall) of the interior of the housing 5 to each other at the center in the left-right direction (X-axis direction).
As in the case of modification 1 of embodiment 1, in order to ensure both the insulation distance between the spacer 51 and the electrode plate 63 and the rigidity of the spacer 51, the height position (Z-axis position) of the upper end (Z-direction end) of the portion of the spacer 51 intersecting the electrode plate 63 is formed lower than the height position (Z-axis position) of the upper end (Z-direction end) of the other portion. The height position (Z-axis direction position) of the upper ends (Z-direction ends) of the both end portions of the spacer 51 in the extending direction is the same as the height position (Z-axis direction position) of the upper end (Z-direction end) of the housing 5.
Further, three electrode plates 63 are integrated with three external terminals 62, respectively, and are insert-formed in the housing 5. The case 5 is bonded to the heat sink 14 with an adhesive (not shown), and the spacer 51 is bonded to the bottom surface of the recess 19.
As described above, in the power module 202 according to embodiment 2, since the spacer 51 is integrally formed with the case 5, a part of the case 5 functions as a spacer for the recess 19 of the heat sink 14, and the case 5 is bonded to the heat sink 14 by using an adhesive (not shown), so that the rigidity of the heat sink 14 can be ensured by a part of the case 5.
Modification example of embodiment 2
Fig. 10 is a cross-sectional view of a power module 202 (6 in 1) according to a modification of embodiment 2. As shown in fig. 10, the spacer 51 integrally formed with the case 5 and the spacer 17 integrally formed with the heat radiating member 14 may be combined. Specifically, the spacer 51 is formed at a portion corresponding to both end portions in the extending direction of the spacer 51 shown in fig. 8 and 9, and the spacer 17 is formed at a portion corresponding to a portion of the spacer 51 shown in fig. 8 and 9 other than both end portions in the extending direction. The case 5 is bonded to the heat sink 14 by an adhesive (not shown), so that the spacer 51 and the spacer 17 are bonded. In this case as well, the same effects as in the case of embodiment 2 can be obtained.
Embodiment 3 >
Next, the power module 202 of embodiment 3 will be described. Fig. 11 is a plan view of a power module (6 in 1) according to embodiment 3. In fig. 11, the sealing resin 7 is omitted for easy viewing of the drawing. In embodiment 3, the same components as those described in embodiment 1 and embodiment 2 are denoted by the same reference numerals, and description thereof is omitted.
In embodiment 1 and embodiment 2, the number of the ceramic substrates 10 arranged on the N side is one, and three front conductor layers 13 constituting the ceramic substrate 10 are formed, but as shown in fig. 11, in embodiment 3, the ceramic substrate 10 arranged on the N side is divided into three so as to correspond to the U-phase circuit, the V-phase circuit, and the W-phase circuit, respectively. Specifically, on the N side, three ceramic substrates 10 are arranged in the Y-axis direction.
On the P side of the common drain front conductor layer 13, a U-phase circuit, a V-phase circuit, and a W-phase circuit are arranged on one ceramic substrate 10. On the other hand, on the N side to be insulated from the front surface conductor layer 13, a U-phase circuit, a V-phase circuit, and a W-phase circuit are respectively arranged on the three ceramic substrates 10.
As described above, in the power module 202 according to embodiment 3, the circuit forming means includes the N-side electrode plate 64, the IGBTs 21 and the diodes 22 are connected to form the U-phase circuit, the V-phase circuit, and the W-phase circuit, and the ceramic substrate 10 on which the IGBTs 21 and the diodes 22 connected to the N-side electrode plate 64 are mounted among the plurality of ceramic substrates 10 is divided into three parts so as to correspond to the U-phase circuit, the V-phase circuit, and the W-phase circuit, respectively.
As the size of the ceramic substrate 10 increases, the thermal stress generated in the ceramic substrate 10 and the heat sink 14 increases, but since the X-axis direction and the Y-axis direction of each ceramic substrate 10 disposed on the N side are smaller than the X-axis direction and the Y-axis direction of each ceramic substrate 10 disposed on the P side, the thermal stress generated in the ceramic substrate 10 and the heat sink 14 can be reduced as compared with the cases of embodiment 1 and embodiment 2. As a result, compared with the cases of embodiment 1 and embodiment 2, warpage of the heat radiating member 14 can be suppressed.
Modification examples of embodiments 1 to 3
In the above, aluminum nitride is used as a material of the base material 11 of the ceramic substrate 10, but even if silicon nitride or aluminum oxide is used, the same effects as those in the above case can be obtained.
In the above, the conductive layers made of copper are used as the back surface conductive layer 12 and the front surface conductive layer 13, but even if the back surface conductive layer 12 and the front surface conductive layer 13 are made of aluminum, the same effects as those in the above case can be obtained by modifying the surfaces thereof by solder dipping with nickel plating or the like.
In the above, an aluminum alloy is used as a material of the heat radiating member 14, but even if copper or a copper alloy is used, the same effects as in the above case can be obtained.
In the above description, although silicon IGBTs and diodes are used as the IGBTs 21 and diodes 22, the same effects as those in the above case can be obtained even if silicon carbide, gallium nitride, or other wide-bandgap semiconductors are used.
In the above, although solder having a content of 96.5% tin, 3% silver, 0.5% copper and a melting point of 217 ℃ is used as the solder 30, the same effects as those in the above case can be obtained even if solder having a content of 99.3% tin, 0.7% copper and a melting point of 224 ℃ or solder having a content of 95% tin, 5% antimony and a melting point of 240 ℃ is used. In addition, even if a part of the solder is replaced with a silver epoxy adhesive, a silver sintered material, or a brazing material as a bonding material other than solder, the same effects as those in the above-described case can be obtained.
In the above, although an aluminum lead is used as the lead 41, the same effects as those in the above case can be obtained even if an aluminum alloy or copper lead containing an additive such as iron in a small amount is used.
In the above, PPS-made case is used as the case 5, but heat resistance can be improved by substitution with LCP (Liquid Crystal Polymer ).
In the above description, the electrode plate made of copper is used as the various electrode plates, but even if nickel plating is suitably performed or the electrode plate made of copper alloy or nickel-plated aluminum is replaced, the same effects as those in the above case can be obtained.
In the above, the epoxy resin in which the silica filler is dispersed is used as the sealing resin 7, but may be a filler such as alumina, and even if a resin in which a silicone resin is mixed with an epoxy resin is used, the same effects as those in the above case can be obtained. In addition, even in the method of sealing with only silicone, the same effects as in the case described above can be obtained.
In addition, in the spacer 17, the thickness in the up-down direction (Z-axis direction) of at least both end portions in the extending direction is preferably the same as the thickness in the up-down direction (Z-axis direction) of the peripheral wall portion 15, but even if it is only slightly thick, there is an effect of increasing the rigidity. Further, if the thickness of the solder 30 for bonding in the up-down direction (Z-axis direction) is 0.3mm or more, there is an effect of suppressing the outflow of the solder 30.
When the thickness of the back surface conductor layer 12 in the up-down direction (Z-axis direction) and the thickness of the base material 11 in the up-down direction (Z-axis direction) are added to each other to obtain a value of less than 1.1mm, the back surface conductor layer 12 can function as a positioning of the ceramic substrate 10, and warpage can be suppressed without increasing the size of the power module 202 due to overlapping the back surface conductor layer 12 and the base material 11.
In addition, when it is difficult to form the spacer 17 on the heat dissipation member 14, if the ceramic substrates 10 of different specifications or different sizes are likely to be arranged, in the brazing process of fig. 3 (a), the heat dissipation member 14 may be fixed by attaching a pressing jig to a portion corresponding to the spacer 17, and heated or cooled, thereby suppressing warpage and bonding. Even in the case where the heat radiating member 14 is formed with the spacer 17, a pressing aid for suppressing warpage is considered to be effective.
In addition, as for embodiment 2, the modification of embodiment 2, and embodiment 3, the lead 42 may be used as a circuit forming member as in modification 2 of embodiment 1. In addition, in the case of the electrode plate 63 and the external terminal 62 in the modification 1, the modification 2, and the modification 3 of the embodiment 1, the conductive adhesive 31 may be used as shown in fig. 4 (c).
In embodiment 3, the spacer 171 may be provided instead of the spacer 17 as in modification 1 of embodiment 1, or the spacer 51 may be provided instead of the spacer 17 as in embodiment 2. In embodiment 3, the spacer 51 and the spacer 17 may be combined as in the modification of embodiment 2.
Embodiment 4 >
The present embodiment applies the power modules of embodiments 1 to 3 described above to a power conversion device. The application of the power modules of embodiments 1 to 3 is not limited to a specific power conversion device, and the case where the power modules of embodiments 1 to 3 are applied to a three-phase inverter will be described below as embodiment 4.
Fig. 12 is a block diagram showing the configuration of a power conversion system to which the power conversion device of embodiment 4 is applied.
The power conversion system shown in fig. 12 includes a power source 100, a power conversion device 200, and a load 300. The power supply 100 is a dc power supply, and supplies dc power to the power conversion device 200. The power supply 100 may be configured by various power supplies, for example, a direct current system, a solar cell, a battery, a rectifier circuit connected to an alternating current system, or an AC/DC converter. The power supply 100 may be configured by a DC/DC converter that converts direct-current power output from a direct-current system into predetermined power.
The power conversion device 200 is a three-phase inverter connected between the power supply 100 and the load 300, and converts dc power supplied from the power supply 100 into ac power to supply the ac power to the load 300. As shown in fig. 12, the power conversion device 200 includes: a main conversion circuit 201 that converts direct-current power into alternating-current power and outputs the same; and a control circuit 203 that outputs a control signal that controls the main conversion circuit 201 to the main conversion circuit 201.
The load 300 is a three-phase motor driven by ac power supplied from the power conversion device 200. The load 300 is not limited to a specific application, and is used as a motor mounted on various electric devices, for example, a motor for a hybrid car, an electric car, a railway car, an elevator, or an air conditioner.
The details of the power conversion device 200 will be described below. The main conversion circuit 201 includes a switching element (not shown) and a flywheel diode (not shown), and the switching element switches to convert dc power supplied from the power supply 100 into ac power and supplies the ac power to the load 300. The main converter circuit 201 of the present embodiment has various specific circuit configurations, but the main converter circuit 201 of the present embodiment is a two-level three-phase full-bridge circuit, and may be configured of six switching elements and six freewheeling diodes connected in anti-parallel to the respective switching elements. Each switching element and each flywheel diode of the main converter circuit 201 are configured by a power module 202 corresponding to any one of embodiments 1 to 3 described above. The six switching elements are connected in series to form upper and lower arms, and each of the upper and lower arms forms each phase (U-phase, V-phase, W-phase) of the full bridge circuit. The output terminals of the upper and lower arms, that is, the three output terminals of the main conversion circuit 201 are connected to the load 300.
The main converter circuit 201 includes a driving circuit (not shown) for driving each switching element, and the driving circuit may be incorporated in the power module 202 or may be provided separately from the power module 202. The driving circuit generates a driving signal for driving the switching element of the main conversion circuit 201, and supplies the driving signal to the control electrode of the switching element of the main conversion circuit 201. Specifically, in accordance with a control signal from the control circuit 203 described later, a drive signal for turning on the switching element and a drive signal for turning off the switching element are output to the control electrode of each switching element. The drive signal is a voltage signal (on signal) equal to or higher than the threshold voltage of the switching element when the switching element is maintained in the on state, and is a voltage signal (off signal) equal to or lower than the threshold voltage of the switching element when the switching element is maintained in the off state.
The control circuit 203 controls the switching elements of the main conversion circuit 201 to supply desired power to the load 300. Specifically, the time (on time) for which each switching element of the main conversion circuit 201 should be in the on state is calculated from the electric power to be supplied to the load 300. For example, the main conversion circuit 201 can be controlled by PWM control in which the on time of the switching element is modulated according to the voltage to be output. Then, a control command (control signal) is output to the driving circuit provided in the main conversion circuit 201, so that an on signal is output to the switching element to be turned on at each timing, and an off signal is output to the switching element to be turned off. The drive circuit outputs an on signal or an off signal as a drive signal to the control electrode of each switching element based on the control signal.
In the power conversion device 200 of the present embodiment, the power modules 202 of embodiments 1 to 3 are applied as the switching elements and the flywheel diodes of the main conversion circuit 201, and thus durability can be improved.
In the present embodiment, an example was described in which the power modules 202 of embodiments 1 to 3 are applied to a two-level three-phase inverter, but the application of the power modules 202 of embodiments 1 to 3 is not limited to this, and can be applied to various power conversion devices. In the present embodiment, the power conversion device is provided with two levels, but may be a three-level or multi-level power conversion device, and the power modules 202 of embodiments 1 to 3 may be applied to a single-phase inverter when power is supplied to a single-phase load. In addition, when power is supplied to a DC load or the like, the power module 202 of embodiments 1 to 3 may be applied to a DC/DC converter or an AC/DC converter.
The power conversion device to which the power module 202 of embodiments 1 to 3 is applied is not limited to the case where the load is an electric motor, and may be used as a power supply device for an electric discharge machine, a laser machine, an induction heating cooker, or a non-contact power supply system, or may be used as a power conditioner for a solar power generation system, a power storage system, or the like, for example.
The present disclosure has been described in detail, but the above description is in all aspects illustrative and not restrictive. It is understood that numerous modifications not illustrated can be envisaged.
The embodiments may be freely combined, or may be modified or omitted as appropriate.
Description of the reference numerals
5: a housing; 7: sealing resin; 10: a ceramic substrate; 14: a heat radiating member; 15: a peripheral wall portion; 16: a bottom wall portion; 17: a spacer; 19: a concave portion; 21: an IGBT;22: a diode; 30: solder; 31: a conductive adhesive; 42: a lead wire; 51: a spacer; 62: an external terminal; 63: an electrode plate; 64: an N-side electrode plate; 65: a P-side electrode plate; 171: a spacer; 200: a power conversion device; 201: a main conversion circuit; 202: a power module; 203: and a control circuit.
Claims (8)
1. A power module, wherein the power module comprises:
a heat radiation member having a peripheral wall portion and a recess portion formed on an inner peripheral side of the peripheral wall portion and recessed downward;
at least one insulating substrate bonded into the recess;
a plurality of semiconductor elements mounted on at least one of the insulating substrates;
a case fixed along an upper end of the peripheral wall portion, the case being filled with a sealing material; and
a circuit forming member including electrode plates connecting the plurality of semiconductor elements and the semiconductor element to at least one of the insulating substrates,
the heat radiating member has a thickness in the vertical direction of the peripheral wall portion that is thicker than a thickness in the vertical direction of a bottom wall portion that forms a bottom surface of the recess.
2. The power module of claim 1, wherein,
at least one of the insulating substrates and the heat dissipation member are bonded with solder having a melting point lower than the heat-resistant temperature of the case.
3. The power module of claim 2, wherein,
the electrode plate is bonded to an external terminal formed in the case by a bonding material having a lower heating temperature than the solder.
4. A power module according to any one of claims 1 to 3, wherein,
at least one of the insulating substrates is provided with a plurality of the insulating substrates,
the heat dissipation member is provided with a spacer portion disposed between adjacent ones of the insulating substrates, and the recess portion is divided into a plurality of portions.
5. The power module of claim 4, wherein,
the circuit forming members are disposed so as to span each of the adjacent insulating substrates,
the vertical thickness of the portion of the spacer intersecting the circuit forming member is smaller than the vertical thickness of the other portion.
6. The power module of claim 4 or 5, wherein,
the spacer is integrally formed with the housing.
7. The power module according to any one of claims 4 to 6, wherein,
the circuit forming part includes an N-side electrode plate,
the plurality of semiconductor elements are connected in such a manner as to constitute a U-phase circuit, a V-phase circuit, and a W-phase circuit,
the insulating substrate on which the semiconductor element connected to the N-side electrode plate is mounted is divided into three parts so as to correspond to the U-phase circuit, the V-phase circuit, and the W-phase circuit, respectively.
8. A power conversion device, wherein the power conversion device includes:
a main conversion circuit having the power module according to any one of claims 1 to 7, converting and outputting the input electric power; and
and a control circuit that outputs a control signal for controlling the main conversion circuit to the main conversion circuit.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021134819 | 2021-08-20 | ||
| JP2021-134819 | 2021-08-20 | ||
| PCT/JP2022/029905 WO2023022001A1 (en) | 2021-08-20 | 2022-08-04 | Power module and power conversion device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117769761A true CN117769761A (en) | 2024-03-26 |
Family
ID=85239512
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202280053221.8A Pending CN117769761A (en) | 2021-08-20 | 2022-08-04 | Power module and power conversion device |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPWO2023022001A1 (en) |
| CN (1) | CN117769761A (en) |
| WO (1) | WO2023022001A1 (en) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5050633B2 (en) * | 2007-05-02 | 2012-10-17 | 三菱マテリアル株式会社 | Power module substrate with heat sink and power module |
| JP5863602B2 (en) * | 2011-08-31 | 2016-02-16 | 三菱電機株式会社 | Power semiconductor device |
| JP2020072094A (en) * | 2018-10-29 | 2020-05-07 | 京セラ株式会社 | Power unit, method of manufacturing the same, and electric device having power unit |
-
2022
- 2022-08-04 JP JP2023542323A patent/JPWO2023022001A1/ja active Pending
- 2022-08-04 CN CN202280053221.8A patent/CN117769761A/en active Pending
- 2022-08-04 WO PCT/JP2022/029905 patent/WO2023022001A1/en active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2023022001A1 (en) | 2023-02-23 |
| WO2023022001A1 (en) | 2023-02-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10515863B2 (en) | Power module and power conversion apparatus including case and elastic member | |
| CN110828409B (en) | Semiconductor device, power conversion device, and method for manufacturing the same | |
| US10546800B2 (en) | Semiconductor module, method for manufacturing the same and electric power conversion device | |
| US11322432B2 (en) | Semiconductor module and power conversion apparatus | |
| JP7091878B2 (en) | Power modules, power converters, and methods for manufacturing power modules | |
| CN110574159A (en) | Power module, power conversion device, and method for manufacturing power module | |
| JP2019179828A (en) | Semiconductor device and manufacturing method therefor, and power conversion apparatus | |
| JP6575739B1 (en) | Semiconductor device, semiconductor device manufacturing method, and power conversion device | |
| JP7103279B2 (en) | Semiconductor equipment | |
| WO2020245880A1 (en) | Semiconductor module and power conversion device | |
| US11127603B2 (en) | Semiconductor module and power conversion device | |
| WO2019049400A1 (en) | Power module, production method therefor, and power conversion device | |
| CN112997297A (en) | Semiconductor device, power conversion device, and method for manufacturing semiconductor device | |
| WO2022049660A1 (en) | Semiconductor device, power conversion device, and mobile body | |
| US20220108941A1 (en) | Semiconductor device, semiconductor device manufacturing method, and power converter | |
| CN117769761A (en) | Power module and power conversion device | |
| WO2023195325A1 (en) | Power module and power conversion device | |
| CN114981956A (en) | Power module and power conversion device | |
| US11887903B2 (en) | Power semiconductor device, method for manufacturing power semiconductor device, and power conversion apparatus | |
| CN111788676A (en) | Semiconductor device and power conversion device | |
| JP2023169589A (en) | Power module and power converter | |
| JP2024010348A (en) | Semiconductor module and power conversion device | |
| WO2021193587A1 (en) | Semiconductor device, power conversion device, and method for manufacturing semiconductor device | |
| WO2023175854A1 (en) | Semiconductor device, power converter, and method for manufacturing semiconductor device | |
| WO2021100199A1 (en) | Semiconductor device, method for producing same, and electric power conversion device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |