JP2024010348A - Semiconductor module and power conversion device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent a bonding material in a semiconductor module from melting due to heat at the time when an external terminal is connected with the other apparatus.

SOLUTION: A semiconductor module comprises: a heat spreader 70 that is a heat radiation member; a semiconductor element 20 mounted on the heat spreader 70; an electrode plate 61 connected with a main electrode of the semiconductor element 20; and an encapsulation resin 80 that encapsulates the heat spreader 70, the semiconductor element 20, and the electrode plate 61. A part of the electrode plate 61 is protruded from the encapsulation resin 80 to be an external terminal. A heat radiation path having a thermal resistivity lower than that of the encapsulation resin 80 and thermally connecting between the electrode plate 61 and the heat spreader 70 is formed between a portion to be the external terminal of the electrode plate 61 and a portion connected with the semiconductor element 20.

SELECTED DRAWING: Figure 1

COPYRIGHT: (C)2024,JPO&INPIT

Description

The present disclosure relates to the structure of a semiconductor module.

Semiconductor modules for power control are called power modules, and are used in all fields from power generation and transmission to efficient energy use and regeneration. For example, because power modules are used in many products such as industrial equipment, home appliances, and information terminals, high productivity is required of power modules.

Conventionally, the main circuits of semiconductor elements installed in power modules have been constructed using wire bonds, but in power modules that require high reliability, such as modules installed in electric vehicles, copper lead frames are used. A structure in which the main circuit is constructed by joining semiconductor elements with solder is becoming widespread.

In addition, silicon carbide (SiC) semiconductors, which have high operating temperatures and excellent efficiency, are likely to become mainstream in the future, so power modules are also required to have a package form that can be applied to SiC semiconductors. There is.

Patent Document 1 listed below describes a technology that thermally isolates semiconductor elements and suppresses thermal interference between semiconductor elements by providing grooves in the ceramic base material of an insulating substrate on which a plurality of semiconductor elements are mounted. Disclosed. Further, Patent Document 2 describes that in a power module having a configuration in which a lead frame is bonded to the top surface of a semiconductor element, sintered silver is used as a bonding material to prevent the bonding material from remelting after bonding. It is shown.

JP2013-016766A Patent No. 6877600

When connecting external terminals of a semiconductor module such as a power module to terminals of other equipment, connection by soldering is often used. However, if the heat from soldering is transmitted to the semiconductor module and the solder inside the semiconductor module melts, there are concerns that the reliability of the joint may be affected or that the expansion of the solder may cause cracks in the sealing resin.

The present disclosure has been made to solve the above-mentioned problems, and aims to prevent the bonding material inside the semiconductor module from melting due to heat when connecting external terminals to other devices. .

A semiconductor module according to the present disclosure includes a heat dissipating member, a semiconductor element mounted on the heat dissipating member, an electrode plate connected to a main electrode of the semiconductor element, and sealing the heat dissipating member, the semiconductor element, and the electrode plate. a sealing member for sealing, a portion of the electrode plate protruding from the sealing member to become an external terminal, and a portion of the electrode plate that becomes the external terminal and a portion connected to the semiconductor element. A heat radiation path having a thermal resistivity lower than that of the sealing member and thermally connecting the electrode plate and the heat radiation member is formed between the electrode plates and the heat radiation member.

According to the semiconductor module according to the present disclosure, a heat radiation path that thermally connects the electrode plate and the heat radiation member is provided between the portion of the electrode plate that becomes the external terminal and the portion connected to the semiconductor element. Therefore, the bonding material for bonding the electrode plate and the semiconductor element is prevented from melting due to the heat generated when the external terminals of the semiconductor module are soldered to the terminals of other equipment.

1 is a cross-sectional view showing the structure of a semiconductor module according to Embodiment 1. FIG. 1 is a top view showing the structure of a semiconductor module according to Embodiment 1. FIG. 1 is a cross-sectional view showing a manufacturing process of a semiconductor module according to Embodiment 1. FIG. 1 is a cross-sectional view showing a manufacturing process of a semiconductor module according to Embodiment 1. FIG. 1 is a cross-sectional view showing a manufacturing process of a semiconductor module according to Embodiment 1. FIG. 1 is a cross-sectional view showing a manufacturing process of a semiconductor module according to Embodiment 1. FIG. FIG. 3 is a cross-sectional view showing the structure of a semiconductor module according to a modification of the first embodiment. FIG. 3 is a cross-sectional view showing the structure of a semiconductor module according to a modification of the first embodiment. FIG. 3 is a cross-sectional view showing the structure of a semiconductor module according to a second embodiment. FIG. 3 is a top view showing the structure of a semiconductor module according to a second embodiment. 7 is a cross-sectional view showing a manufacturing process of a semiconductor module according to a second embodiment. FIG. 7 is a cross-sectional view showing a manufacturing process of a semiconductor module according to a second embodiment. FIG. 7 is a cross-sectional view showing a manufacturing process of a semiconductor module according to a second embodiment. FIG. 7 is a cross-sectional view showing a manufacturing process of a semiconductor module according to a second embodiment. FIG. 7 is a cross-sectional view showing the structure of a semiconductor module according to a modification of the second embodiment. FIG. FIG. 3 is a cross-sectional view showing the structure of a semiconductor module according to a third embodiment. FIG. 3 is a cross-sectional view showing the structure of a semiconductor module according to a third embodiment. FIG. 3 is a block diagram showing the configuration of a power conversion system to which a power conversion device according to a fourth embodiment is applied.

<Embodiment 1>
1 and 2 are conceptual diagrams showing the structure of a semiconductor module according to the first embodiment. FIG. 1 is a sectional view of the semiconductor module, and FIG. 2 is a top view thereof.

The semiconductor module shown in FIGS. 1 and 2 is a so-called "2 in 1" type semiconductor module that includes two pairs (for two arms) of diodes and an IGBT (Insulated Gate Bipolar Transistor) as the semiconductor element 20. However, the semiconductor module is not limited to the "2in1" type, but may be of the "1in1" type, "6in1" type, or the like. Further, the switching element is not limited to an IGBT, but may be a MOSFET (Metal Oxide Semiconductor Field-Effect Transistor), for example.

The semiconductor element 20 is bonded using solder 30 onto a heat spreader 70 which is a heat dissipating member. A main electrode (not shown) is formed on the upper surface of the semiconductor element 20 , and the main electrode is connected to the electrode plate 61 using solder 31 . The IGBT of the semiconductor element 20 further has a signal electrode 20g, and the signal electrode 20g is connected to the signal terminal 62 using an aluminum wire 40.

A ceramic plate 25 is mounted on the heat spreader 70 together with the semiconductor element 20 . The bottom of the ceramic plate 25 is fitted into a recess 70h formed in the heat spreader 70 and is in contact with the heat spreader 70. The upper surface of the ceramic plate 25 is in contact with the electrode plate 61. The ceramic plate 25 is fixed to the heat spreader 70 using a heat-resistant adhesive 86 in a portion that does not overlap with the electrode plate 61. The ceramic plate 25 serves as a heat radiation path that thermally connects the electrode plate 61 and the heat spreader 70.

On the lower surface of the heat spreader 70, an insulating sheet 10 with copper foil made of a thermally conductive resin layer 11 and a copper foil 12 is provided. The thermally conductive resin layer 11 side surface of the copper foil-covered insulating sheet 10 is attached to the heat spreader 70 .

The above elements are sealed with a sealing resin 80 that is a sealing member (in FIG. 2, only the outline of the sealing resin 80 is shown by a broken line). However, the electrode plate 61 and the signal terminal 62 have a portion that protrudes from the sealing resin 80 to the outside, and that portion becomes an external terminal of the semiconductor module. Further, the copper foil 12 of the copper foil-covered insulating sheet 10 is exposed from the sealing resin 80, and the copper foil 12 is pasted on the base plate 71 using thermally conductive grease 81.

In this embodiment, the heat spreader 70 is made of copper and has a size of 25 mm x 40 mm and a thickness of 2 mm. Further, as the semiconductor element 20, a diode made of silicon and having a size of 13 mm x 10 mm and a thickness of 0.2 mm and an IGBT made of silicon and having a size of 13 mm x 13 mm and a thickness of 0.2 mm were used. Solders 30 and 31 used were 96.5% tin, 3% silver, 0.5% copper, and had a melting point of 217°C.

Further, as the electrode plate 61, one made of copper and having a plate thickness of 0.64 mm was used. The sealing resin 80 used was an epoxy resin in which silica filler was dispersed, and was formed by a transfer molding method. As the signal terminal 62, one made of copper and having a plate thickness of 0.64 mm was used. The wire 40 was made of pure aluminum and had a thickness of 0.15 mm. The insulating sheet 10 with copper foil used was made of a copper foil 12 with a thickness of 0.1 mm and a thermally conductive resin layer 11 with a thickness of 0.05 mm, and had a size of 62 mm x 44 mm. The ceramic plate 25 was made of aluminum nitride and had a size of 54 mm x 5 mm and a thickness of 1 mm.

However, the material of the ceramic plate 25 may be silicon nitride, alumina, or the like. The electrode plate 61, heat spreader 70, and base plate 71 may be made of copper alloy, aluminum whose surface is nickel plated, or the like. The semiconductor element 20 may be one using a wide bandgap semiconductor such as silicon carbide or gallium nitride.

The solders 30 and 31 may be made of 99.3% tin, 0.7% copper, and have a melting point of 224°C. Further, instead of the solders 30 and 31, a silver sintered material or a brazing material having better heat resistance than solder may be used.

The wire 40 may be made of aluminum alloy or copper containing a small amount of additives such as iron. The sealing resin 80 may be an epoxy resin in which filler such as alumina is dispersed, or may be a mixture of epoxy resin and silicone resin in which filler such as silica or alumina is dispersed.

According to the semiconductor module according to the first embodiment, the thermal resistivity is lower than that of the sealing resin 80 which is the sealing member between the part of the electrode plate 61 that becomes the external terminal and the part connected to the semiconductor element 20. A ceramic plate 25 that is low and serves as a heat dissipation path that thermally connects the electrode plate 61 and the heat spreader 70 is provided. Since the ceramic plate 25 serves as a heat bypass, the solder 31 that joins the electrode plate 61 and the semiconductor element 20 may melt due to the heat generated when the electrode plate 61 of the semiconductor module is soldered to the terminal 90 of another device. is prevented. Therefore, the reliability of the semiconductor module is improved.

Furthermore, in this embodiment, the ceramic plate 25 is fitted into the recess 70h of the heat spreader 70 to increase the contact area between the ceramic plate 25 and the heat spreader 70. Thereby, the thermal resistance of the heat radiation path can be lowered, contributing to efficient heat radiation.

3 to 6 are cross-sectional views showing the manufacturing process of the semiconductor module according to the first embodiment. Hereinafter, the manufacturing process of the semiconductor module according to the first embodiment will be described with reference to these figures.

First, as shown in FIG. 3, the ceramic plate 25 is placed in the recess 70h of the heat spreader 70, and then the plate-shaped solder 30, the semiconductor element 20, the plate-shaped solder 31, and the insulated lead are placed on the heat spreader 70. The electrode plates 61 attached to the frame frame 60 (hereinafter also referred to as "lead frame state") are stacked in this order. Then, the heat spreader 70 on which they are mounted is heated to 280° C. using a reflow oven to melt the solders 30 and 31, and the heat spreader 70, the semiconductor element 20, and the electrode plate 61 in a lead frame state are connected by solder.

Next, as shown in FIG. 4, the signal terminal 62 in the lead frame state and the IGBT of the semiconductor element 20 are connected using the wire 40. Then, as shown in FIG. 5, the insulating sheet 10 with copper foil is placed in the mold, and the heat spreader 70 on which the semiconductor element 20, the electrode plate 61 in the form of a lead frame, and the signal terminal 62 are mounted is placed thereon. The sealing resin 80 is formed by a transfer molding method. At this time, the insulating lead frame frame 60 is removed from the electrode plate 61 and the signal terminal 62, and further lead forming of the signal terminal 62 is performed.

Thereafter, as shown in FIG. 6, the copper foil 12 of the copper foil-covered insulating sheet 10 exposed at the bottom of the semiconductor module is bonded to the base plate 71 using thermally conductive grease 81, thereby completing the semiconductor module.

In actual use, the electrode plate 61 as an external terminal of the semiconductor module is connected to a terminal 90 of another device to which the semiconductor module is attached using solder 91.

[Modified example]
As described above, in the configuration of FIG. 1, the ceramic plate 25 is fitted into the recess 70h of the heat spreader 70 to increase the contact area between the ceramic plate 25 and the heat spreader 70, thereby lowering the thermal resistance of the heat radiation path. Here, an example of another method for lowering the thermal resistance of the heat dissipation path will be shown.

For example, as shown in FIG. 7, instead of the ceramic plate 25, a ceramic plate 25m that is metalized to be solderable is used, and the ceramic plate 25m and the heat spreader 70 are connected using a high melting point solder 32. Good too. By joining the ceramic plate 25m and the heat spreader 70 with the high melting point solder 32, the interface thermal resistance can be reduced, and the thermal resistance of the heat radiation path can be reduced.

Examples of solderable metallization include nickel plating and gold plating. As the high melting point solder 32, for example, 95% tin, 5% antimony, and a melting point of 240° C. can be used.

Alternatively, as shown in FIG. 8, a protrusion 70p may be formed on the upper surface of the heat spreader 70, and the ceramic plate 25 may be provided on the protrusion 70p. In this case, the thickness of the ceramic plate 25 can be reduced (for example, about 0.3 mm), thereby reducing the thermal resistance of the heat radiation path.

<Embodiment 2>
9 and 10 are conceptual diagrams showing the structure of a semiconductor module according to the second embodiment. FIG. 9 is a sectional view of the semiconductor module, and FIG. 10 is a top view thereof. In FIGS. 9 and 10, elements that are the same as or correspond to those shown in Embodiment 1 (FIGS. 1 and 2) are denoted by the same reference numerals, and detailed description thereof will be omitted. do.

In the second embodiment, as shown in FIG. 10, in addition to the heat spreader 70 (first heat dissipation member) on which the semiconductor element 20 is mounted, three small heat spreaders are provided, each corresponding to each of the three electrode plates 61 included in the semiconductor module. 70s (second heat dissipation member) is provided. The three small heat spreaders 70s are insulated from each other, and each of the small heat spreaders 70s is bonded to each of the three electrode plates 61 using high melting point solder 33.

According to the semiconductor module according to the second embodiment, a heat radiation path is formed that thermally connects the electrode plate 61 and the small heat spreader 70s. Since the small heat spreader 70s is insulated from the heat spreader 70, the electrode plate 61 can be directly bonded to the small heat spreader 70s using the high melting point solder 33, and a heat dissipation path with low thermal resistance is formed.

In this embodiment, the size of the heat spreader 70 is set to 25 mm x 35 mm, which is smaller than in the first embodiment, in order to secure a space for the small heat spreader 70s.

11 to 14 are cross-sectional views showing the manufacturing process of the semiconductor module according to the second embodiment. Hereinafter, the manufacturing process of the semiconductor module according to the second embodiment will be described with reference to these figures.

First, as shown in FIG. 11, a plate-shaped solder 30, a semiconductor element 20, a plate-shaped solder 31, and an electrode plate 61 in a lead frame state are stacked and arranged in this order on a heat spreader 70, and A plate-shaped high melting point solder 33 is placed on a small heat spreader 70s. Then, the heat spreader 70 on which they are mounted is heated to 280° C. using a reflow oven to melt the solders 30 and 31 and the high melting point solder 33, and the heat spreader 70, the small heat spreader 70s, the semiconductor element 20, and the lead frame state. The electrode plates 61 are connected by solder.

Next, as shown in FIG. 12, the signal terminal 62 in the lead frame state and the IGBT of the semiconductor element 20 are connected using the wire 40. Then, as shown in FIG. 13, an insulating sheet 10 with copper foil is placed in a mold, and a heat spreader 70 and a small heat spreader are placed on top of the insulating sheet 10 with copper foil mounted thereon. 70s, and a sealing resin 80 is formed by a transfer molding method. At this time, the insulating lead frame frame 60 is removed from the electrode plate 61 and the signal terminal 62, and further lead forming of the signal terminal 62 is performed.

Thereafter, as shown in FIG. 14, the copper foil 12 of the copper foil-covered insulating sheet 10 exposed at the bottom of the semiconductor module is bonded to the base plate 71 using thermally conductive grease 81, thereby completing the semiconductor module.

In actual use, the electrode plate 61 as an external terminal of the semiconductor module is connected to a terminal 90 of another device to which the semiconductor module is attached using solder 91.

[Modified example]
In the second embodiment, the thermal resistance of the heat dissipation path is lowered by directly bonding the electrode plate 61 to the small heat spreader 70s using the high melting point solder 33. For example, as shown in FIG. 15, a bent portion 61c is formed on the electrode plate 61 on the small heat spreader 70s to reduce the distance between the electrode plate 61 and the small heat spreader 70s, and the high melting point solder 33 By making it thinner, the thermal resistance of the heat dissipation path can be further lowered.

<Embodiment 3>
FIG. 16 is a cross-sectional view showing the structure of a semiconductor module according to the third embodiment. In FIG. 16, elements that are the same as or correspond to those shown in Embodiment 1 (FIGS. 1 and 2) are denoted by the same reference numerals, and therefore detailed description thereof will be omitted.

In the semiconductor module according to the third embodiment, a semiconductor element 20 is bonded onto a ceramic substrate 16, which is a heat dissipating member, using a solder 30. The ceramic substrate 16 is composed of a front conductor layer 13, a ceramic base material 14, and a back conductor layer 15, and the semiconductor element 20 is bonded to the surface of the ceramic substrate 16 on the front conductor layer 13 side. A main electrode (not shown) is formed on the upper surface of the semiconductor element 20 , and the main electrode is connected to the electrode plate 61 using solder 31 . The IGBT of the semiconductor element 20 further has a signal electrode (not shown), and the signal electrode is connected to the signal terminal 62 using an aluminum wire 40.

A ceramic plate 25 is mounted on the ceramic substrate 16 together with the semiconductor element 20 . The lower surface of the ceramic plate 25 is in contact with the surface conductor layer 13 of the ceramic substrate 16, and the upper surface of the ceramic plate 25 is in contact with the electrode plate 61. The ceramic plate 25 is fixed to the ceramic substrate 16 using a heat-resistant adhesive (not shown) in a portion that does not overlap with the electrode plate 61. The ceramic plate 25 serves as a heat radiation path that thermally connects the electrode plate 61 and the ceramic substrate 16.

The surface of the ceramic substrate 16 on the back conductor layer 15 side is attached to the base plate 71 using thermally conductive grease 81.

A case 82 that accommodates the above-mentioned elements is provided on the base plate 71, and the inside of the case 82 is filled with liquid sealing resin 83 and is insulated and sealed. Therefore, in this embodiment, case 82 and liquid sealing resin 83 serve as sealing members. The electrode plate 61 and the signal terminal 62 are insert molded into the case 82. Further, the electrode plate 61 and the signal terminal 62 have a portion protruding from the case 82 to the outside, and that portion serves as an external terminal of the semiconductor module.

In this embodiment, the ceramic substrate 16 includes a surface conductor layer 13 made of copper with a thickness of 0.8 mm, a ceramic base material 14 made of aluminum nitride with a thickness of 0.64 mm, and a ceramic substrate 14 made of copper with a thickness of 0.8 mm. A back conductor layer 15 was used. As the case 82, one made of PPS resin was used. The electrode plate 61 and signal terminal 62 which are insert-molded into the case 82 are made of copper and have a thickness of 0.64 mm. The ceramic plate 25 was made of aluminum nitride and had dimensions of 54 mm x 5 mm x 1 mm in thickness.

[Modified example]
The second embodiment may be applied to the semiconductor module of the third embodiment. That is, as shown in FIG. 17, a small surface conductor layer 13s is provided on the ceramic substrate 16 in addition to the surface conductor layer 13 on which the semiconductor element 20 is mounted, and the electrode plate 61 and the surface conductor layer 13s are bonded with high melting point solder. 33 may be used for direct bonding. When a semiconductor module has a plurality of electrode plates 61, a small surface conductor layer 13s is provided for each electrode plate 61.

<Embodiment 4>
In this embodiment, the semiconductor module according to any one of the first to third embodiments described above is applied to a power conversion device. Although the application of the semiconductor modules according to Embodiments 1 to 3 is not limited to a specific power conversion device, hereinafter, as Embodiment 4, any one of Embodiments 1 to 3 is applied to a three-phase inverter. A case where such a semiconductor module is applied will be explained.

FIG. 18 is a block diagram showing the configuration of a power conversion system to which the power conversion device according to the present embodiment is applied.

The power conversion system shown in FIG. 18 includes a power source 100, a power conversion device 200, and a load 300. Power supply 100 is a DC power supply and supplies DC power to power conversion device 200. The power source 100 can be composed of various things, for example, it can be composed of a DC system, a solar battery, a storage battery, or it can be composed of a rectifier circuit or an AC/DC converter connected to an AC system. Good too. Moreover, the power supply 100 may be configured with a DC/DC converter that converts DC power output from a DC system into predetermined power.

Power conversion device 200 is a three-phase inverter connected between power supply 100 and load 300, converts DC power supplied from power supply 100 into AC power, and supplies AC power to load 300. As shown in FIG. 18, the power conversion device 200 includes a main conversion circuit 201 that converts DC power into AC power and outputs it, and a control circuit 203 that outputs a control signal for controlling the main conversion circuit 201 to the main conversion circuit 201. It is equipped with

The load 300 is a three-phase electric motor driven by AC power supplied from the power converter 200. Note that the load 300 is not limited to a specific application, but is a motor installed in various electrical devices, and is used, for example, as a motor for a hybrid vehicle, an electric vehicle, a railway vehicle, an elevator, or an air conditioner.

The details of the power conversion device 200 will be explained below. The main conversion circuit 201 includes a switching element and a freewheeling diode (not shown), and when the switching element switches, it converts DC power supplied from the power supply 100 into AC power, and supplies the alternating current power to the load 300. Although there are various specific circuit configurations of the main conversion circuit 201, the main conversion circuit 201 according to the present embodiment is a two-level three-phase full bridge circuit, and has six switching elements and each switching element. It can be constructed from six freewheeling diodes arranged in antiparallel. Each switching element and each freewheeling diode of the main conversion circuit 201 are configured by a semiconductor module 202 corresponding to any one of the first to third embodiments described above. The six switching elements are connected in series every two switching elements to constitute upper and lower arms, and each upper and lower arm constitutes each phase (U phase, V phase, W phase) of the full bridge circuit. The output terminals of the upper and lower arms, that is, the three output terminals of the main conversion circuit 201, are connected to the load 300.

Further, the main conversion circuit 201 includes a drive circuit (not shown) that drives each switching element, but the drive circuit may be built in the semiconductor module 202 or may be provided separately from the semiconductor module 202. It may be a configuration in which it is provided. The drive circuit generates a drive signal for driving the switching element of the main conversion circuit 201 and supplies it to the control electrode of the switching element of the main conversion circuit 201. Specifically, according to a control signal from a control circuit 203, which will be described later, a drive signal that turns the switching element on and a drive signal that turns the switching element off are output to the control electrode of each switching element. When keeping the switching element in the on state, the drive signal is a voltage signal (on signal) that is greater than or equal to the threshold voltage of the switching element, and when the switching element is kept in the off state, the drive signal is a voltage signal that is less than or equal to the threshold voltage of the switching element. signal (off signal).

Control circuit 203 controls switching elements of main conversion circuit 201 so that desired power is supplied to load 300. Specifically, based on the power to be supplied to the load 300, the time (on time) during which each switching element of the main conversion circuit 201 should be in the on state is calculated. For example, the main conversion circuit 201 can be controlled by PWM control that modulates the on-time of the switching element according to the voltage to be output. Then, a control command (control signal) is given to the drive circuit included in the main conversion circuit 201 so that an on signal is output to the switching element that should be in the on state at each time, and an off signal is output to the switching element that should be in the off state. Output. The drive circuit outputs an on signal or an off signal as a drive signal to the control electrode of each switching element according to this control signal.

In the power conversion device according to this embodiment, since the semiconductor module according to any one of Embodiments 1 to 3 is applied as the switching element and the free wheel diode of the main conversion circuit 201, reliability can be improved.

In this embodiment, an example has been described in which the semiconductor module according to any one of Embodiments 1 to 3 is applied to a two-level three-phase inverter. The present invention is not limited to, and can be applied to various power conversion devices. In this embodiment, a two-level power converter is used, but a three-level or multi-level power converter may also be used, and in the case of supplying power to a single-phase load, a single-phase inverter is used. The semiconductor module according to any one of 1 to 3 may be applied. Furthermore, when power is supplied to a DC load or the like, the semiconductor module according to any one of Embodiments 1 to 3 can be applied to a DC/DC converter or an AC/DC converter.

Further, the power converter to which the semiconductor module according to any one of Embodiments 1 to 3 is applied is not limited to the case where the above-mentioned load is an electric motor, but is, for example, an electrical discharge machine, a laser machine, or an induction It can also be used as a power supply device for a heating cooker or a non-contact power supply system, and can also be used as a power conditioner for a solar power generation system, a power storage system, etc.

Note that it is possible to freely combine each embodiment, or to modify or omit each embodiment as appropriate.

Hereinafter, various aspects of the present disclosure will be collectively described as supplementary notes.

(Additional note 1)
a heat dissipation member;
a semiconductor element mounted on the heat dissipation member;
an electrode plate connected to the main electrode of the semiconductor element;
a sealing member that seals the heat dissipation member, the semiconductor element, and the electrode plate;
Equipped with
A portion of the electrode plate protrudes from the sealing member to become an external terminal,
A material having a lower thermal resistivity than the sealing member and thermally connects the electrode plate and the heat dissipation member between the part of the electrode plate that becomes the external terminal and the part connected to the semiconductor element. A heat dissipation path is formed,
semiconductor module.

(Additional note 2)
The heat dissipation path is formed of a ceramic plate.
The semiconductor module according to Supplementary Note 1.

(Additional note 3)
The heat radiating member includes a first heat radiating member on which the semiconductor element is mounted, and a second heat radiating member insulated from the first heat radiating member,
the heat radiation path thermally connects the electrode plate and the second heat radiation member;
The semiconductor module according to Supplementary Note 1.

(Additional note 4)
A main conversion circuit that includes the semiconductor module according to any one of Supplementary Notes 1 to 3, and converts and outputs input power;
a control circuit that outputs a control signal for controlling the main conversion circuit to the main conversion circuit;
A power converter equipped with

10 Insulating sheet with copper foil, 11 Heat conductive resin layer, 12 Copper foil, 13 Surface conductor layer, 13s Small surface conductor layer, 14 Ceramic base material, 15 Back conductor layer, 16 Ceramic substrate, 20 Semiconductor element, 20g Signal electrode , 25 Ceramic plate, 25m Metallized ceramic plate, 30, 31 Solder, 32, 33 High melting point solder, 40 Wire, 60 Insulated lead frame frame, 61 Electrode plate, 61c Bend part, 62 Signal terminal, 70 Heat spreader, 70s Small size heat spreader, 70h recess, 70p protrusion, 71 base plate, 80 sealing resin, 81 thermal conductive grease, 82 case, 83 liquid sealing resin, 86 heat-resistant adhesive, 90 terminals of other equipment, 91 solder, 100 power supply , 200 power conversion device, 201 main conversion circuit, 202 semiconductor module, 203 control circuit, 300 load.

Claims (4)

a heat dissipation member;
a semiconductor element mounted on the heat dissipation member;
an electrode plate connected to the main electrode of the semiconductor element;
a sealing member that seals the heat dissipation member, the semiconductor element, and the electrode plate;
Equipped with
A portion of the electrode plate protrudes from the sealing member to become an external terminal,
A material having a lower thermal resistivity than the sealing member and thermally connects the electrode plate and the heat dissipation member between the part of the electrode plate that becomes the external terminal and the part connected to the semiconductor element. A heat dissipation path is formed,
semiconductor module. The heat dissipation path is formed of a ceramic plate.
The semiconductor module according to claim 1. The heat radiating member includes a first heat radiating member on which the semiconductor element is mounted, and a second heat radiating member insulated from the first heat radiating member,
the heat radiation path thermally connects the electrode plate and the second heat radiation member;
The semiconductor module according to claim 1. A main conversion circuit that includes the semiconductor module according to any one of claims 1 to 3 and converts and outputs input power;
a control circuit that outputs a control signal for controlling the main conversion circuit to the main conversion circuit;
A power converter equipped with

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