JP2020072094A - Power unit, method of manufacturing the same, and electric device having power unit - Google Patents

Power unit, method of manufacturing the same, and electric device having power unit Download PDF

Info

Publication number
JP2020072094A
JP2020072094A JP2018202394A JP2018202394A JP2020072094A JP 2020072094 A JP2020072094 A JP 2020072094A JP 2018202394 A JP2018202394 A JP 2018202394A JP 2018202394 A JP2018202394 A JP 2018202394A JP 2020072094 A JP2020072094 A JP 2020072094A
Authority
JP
Japan
Prior art keywords
heat sink
recess
power
sealing resin
power unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2018202394A
Other languages
Japanese (ja)
Inventor
航太郎 中村
Kotaro Nakamura
航太郎 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP2018202394A priority Critical patent/JP2020072094A/en
Publication of JP2020072094A publication Critical patent/JP2020072094A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

Abstract

To improve heat dissipation, manufacturing accuracy, and assemblability in a power unit formed by assembling a power module to a heat sink.SOLUTION: A power unit 1 includes a power module 10 and a heat sink 20. The power module includes: a sealing resin 11; a metal plate 12 whose one surface 12a is exposed to the sealing resin; a circuit unit 14, installed on an opposite surface 12b side to the one side of the metal plate, including a power semiconductor switching element 13, sealed with the sealing resin; and an electrode terminal 15 with an inner end portion sealed with the sealing resin, for extracting an electrode of the circuit unit. The heat sink has a recess 21 and a bottom surface 21a of the recess is thermally and mechanically connected to the one surface of the metal plate so that heat from the power semiconductor switching element is conducted to the heat sink through the metal plate. An external protruding portion of the electrode terminal protruding from the side surface of the sealing resin is arranged above an upper end opening of the recess.SELECTED DRAWING: Figure 1

Description

本開示は、パワーユニット、パワーユニットの製造方法及びパワーユニットを有する電気装置に関する。   The present disclosure relates to a power unit, a method for manufacturing the power unit, and an electric device having the power unit.

大電力の変換に用いられるパワーユニットでは、ヒートシンクが用いられることがある。パワーユニットの駆動時の発熱部品であるパワー半導体スイッチング素子からヒートシンクへの熱伝導性は良好である必要がある。特にヒートシンクのモジュール搭載面と逆側の放熱面への熱伝導性が良好であることが好ましい。
特許文献１に記載の発明にあっては、ヒートシンクのモジュール搭載面に凹部を設け、絶縁放熱シート又は放熱グリスを介して発熱部品であるパワー半導体スイッチング素子を当該凹部に配置する。
パワー半導体スイッチング素子の配置部に凹部が設けられることによって、半導体チップ（スイッチング素子）をヒートシンクの放熱面に近づけることができ、当該放熱面への熱伝導性が良好になる。 A heat sink may be used in a power unit used for high-power conversion. It is necessary that the heat conductivity from the power semiconductor switching element, which is a heat-generating component when the power unit is driven, to the heat sink is good. In particular, it is preferable that the heat conduction to the heat radiation surface on the side opposite to the module mounting surface of the heat sink is good.
In the invention described in Patent Document 1, a concave portion is provided on the module mounting surface of the heat sink, and the power semiconductor switching element, which is a heat-generating component, is arranged in the concave portion via an insulating heat dissipation sheet or heat dissipation grease.
By providing the concave portion in the arrangement portion of the power semiconductor switching element, the semiconductor chip (switching element) can be brought close to the heat radiation surface of the heat sink, and the thermal conductivity to the heat radiation surface becomes good.

特許第６１１５４６５号公報Patent No. 6115465

しかしながら、特許文献１にあっては、異なる凹部に配置されるパワー半導体スイッチング素子が共通の回路基板に実装されており、ヒートシンクの凹部の位置精度、回路基板上のスイッチング素子の位置精度が求められるほか、ヒートシンクと回路基板との間に大きな熱応力が発生し得る。
また一般に、ヒートシンクに設けた凹部に半導体チップやその実装基板を配置した場合、その後に半導体チップや電気回路の樹脂封止を行う必要がある。この場合、封止樹脂を硬化させるための熱処理により、ヒートシンクが加熱されることとなる。モジュール搭載用の凹部を設けることによって薄肉化したヒートシンクが加熱により変形するおそれがあり、製造精度が劣化するおそれがある。 However, in Patent Document 1, the power semiconductor switching elements arranged in different recesses are mounted on a common circuit board, and the position accuracy of the recess of the heat sink and the position accuracy of the switching elements on the circuit board are required. In addition, a large thermal stress may occur between the heat sink and the circuit board.
Further, in general, when the semiconductor chip and its mounting substrate are arranged in the recess provided in the heat sink, it is necessary to subsequently perform resin sealing of the semiconductor chip and the electric circuit. In this case, the heat sink is heated by the heat treatment for hardening the sealing resin. The heat sink thinned by providing the module mounting recess may be deformed by heating, which may deteriorate the manufacturing accuracy.

本開示は、パワーモジュールをヒートシンクに組み付けたパワーユニットにおいて、放熱性を向上しつつ、製造精度を向上し、さらに組立性を向上する。   The present disclosure, in a power unit in which a power module is assembled to a heat sink, improves heat dissipation, improves manufacturing accuracy, and further improves assemblability.

本開示の１つの態様のパワーユニットは、パワーモジュールと、ヒートシンクとを備えるパワーユニットであって、前記パワーモジュールは、封止樹脂と、前記封止樹脂に一面を露出させた金属板と、前記金属板の前記一面の反対面側に設置され、パワー半導体スイッチング素子を含み、前記封止樹脂に封止された回路部と、前記回路部の電極を外部に取り出し、内端部が前記封止樹脂に封止された電極端子とを有し、
前記ヒートシンクは、凹部を有し、前記凹部の底面に前記金属板の前記一面が熱的及び機械的に接続され、前記パワー半導体スイッチング素子からの熱が前記金属板を介して前記ヒートシンクに伝導するようにされ、前記金属板が露出する面に隣接する前記封止樹脂の側面から突出した前記電極端子の外部突出部が、前記凹部の上端開口より上位置に配置されている。 A power unit according to one aspect of the present disclosure is a power unit including a power module and a heat sink, wherein the power module includes a sealing resin, a metal plate whose one surface is exposed to the sealing resin, and the metal plate. Of the circuit part, which is installed on the opposite side of the one side, includes a power semiconductor switching element, and is encapsulated in the encapsulation resin, and the electrode of the circuit part is taken out to the outside, and the inner end part is encased in the encapsulation resin. Having a sealed electrode terminal,
The heat sink has a recess, the one surface of the metal plate is thermally and mechanically connected to a bottom surface of the recess, and heat from the power semiconductor switching element is conducted to the heat sink via the metal plate. Thus, the external protruding portion of the electrode terminal protruding from the side surface of the sealing resin adjacent to the surface where the metal plate is exposed is arranged at a position higher than the upper end opening of the recess.

本開示の１つの態様のパワーユニットの製造方法は、前記パワーモジュールの前記封止樹脂を硬化させるための熱処理を含めた樹脂封止工程を実施した後、前記ヒートシンクの前記凹部に前記パワーモジュールを配置し、前記凹部の底面に前記金属板の前記一面を接合するモジュール実装工程を実施する。   In the method for manufacturing a power unit according to one aspect of the present disclosure, after performing a resin sealing process including a heat treatment for curing the sealing resin of the power module, the power module is arranged in the recess of the heat sink. Then, a module mounting step of joining the one surface of the metal plate to the bottom surface of the recess is performed.

本開示のパワーユニットによれば、パワーモジュールの金属板による放熱面がヒートシンクの薄肉化した凹部に熱的に接続するので放熱性が向上し、また封止樹脂まで含めてモジュール化されているので、パワーモジュールの封止樹脂を硬化させるための熱処理工程による熱負荷をヒートシンクに与えることもなく、凹部による薄肉部を有するヒートシンクを樹脂封止工程の加熱により変形させることが避けられ、製造精度を向上することができる。
また、電極端子の外部突出部が凹部の上端開口より上位置に配置されているから、パワーモジュールの底部を凹部に配置する作業において、凹部の縁や周囲上面に電極端子を接触させることが防がれ、組立性が向上する。 According to the power unit of the present disclosure, since the heat dissipation surface of the metal plate of the power module is thermally connected to the thinned recess of the heat sink, the heat dissipation is improved, and since the sealing resin is included, it is modularized. The heat load due to the heat treatment process to cure the sealing resin of the power module is not applied to the heat sink, and it is possible to avoid deforming the heat sink having a thin portion due to the recess due to the heating in the resin sealing process, improving manufacturing accuracy. can do.
In addition, since the external protruding portion of the electrode terminal is located above the upper end opening of the recess, it is possible to prevent the electrode terminal from contacting the edge of the recess or the surrounding upper surface when the bottom of the power module is placed in the recess. It comes off and the assemblability is improved.

本開示のパワーユニットの製造方法によれば、凹部による薄肉部を有するヒートシンクを樹脂封止工程時の加熱により変形させることが避けられ、製造精度を向上することができる。   According to the manufacturing method of the power unit of the present disclosure, it is possible to avoid deforming the heat sink having the thin portion due to the concave portion by heating during the resin sealing step, and it is possible to improve the manufacturing accuracy.

本開示の一実施形態に係るパワーユニットの要部断面模式図である。FIG. 3 is a schematic cross-sectional view of a main part of a power unit according to an embodiment of the present disclosure. 本開示の一実施形態に係るパワーモジュールの上面側斜視図である。It is a top side perspective view of the power module concerning one embodiment of this indication. 本開示の一実施形態に係るパワーモジュールの下面側斜視図である。It is a lower surface side perspective view of the power module which concerns on one Embodiment of this indication. 本開示の一実施形態に係るパワーユニットの断面模式図である。It is a cross-sectional schematic diagram of the power unit which concerns on one Embodiment of this indication. 本開示の一実施形態に係るヒートシンクの上面側斜視図である。FIG. 3 is a top side perspective view of a heat sink according to an embodiment of the present disclosure. 本開示の一実施形態に係るヒートシンクの下面側斜視図である。It is a lower surface side perspective view of the heat sink which concerns on one Embodiment of this indication. 本開示の一実施形態に係るヒートシンクの上面図である。FIG. 3 is a top view of a heat sink according to an embodiment of the present disclosure.

以下に本開示の一実施形態につき図面を参照して説明する。   An embodiment of the present disclosure will be described below with reference to the drawings.

図１の断面図に本パワーユニットの概要を示す。
本パワーユニット１は、パワーモジュール１０と、ヒートシンク２０とを備える。
パワーモジュール１０は、樹脂封止型のパッケージでモジュール化されたものである。パワーモジュール１０の斜視図を図２、図３に示す。
パワーモジュール１０は、封止樹脂１１と、封止樹脂１１に一面である下面１２ａを露出させた金属板１２と、金属板１２の下面１２ａの反対面である上面１２ｂ側に設置され、パワー半導体スイッチング素子１３を含み、封止樹脂１１に封止された回路部１４と、回路部１４の電極を外部に取り出し、内端部が封止樹脂１１に封止された電極端子１５とを有する。
例えば、パワーモジュール１０は、導体パターンを表裏に有した回路基板の上面にパワー半導体スイッチング素子１３及び電極端子１５を実装し、必要な配線接続をボンディングワイヤ等で行って回路部１４を構成し、回路基板の下面の導体ベタパターンを金属板１２の上面１２ｂにはんだ等の熱伝導性接合剤３０により接合して構成される。金属板１２の上面１２ｂにセラミック等による絶縁層を形成し、その上にパワー半導体スイッチング素子１３等を接続する導体パターンを形成してもよい。
その後、封止樹脂１１による樹脂封止工程を実施する。
封止樹脂１１は、金属板１２の下面１２ａ以外の面、パワー半導体スイッチング素子１３を含む回路部１４、電極端子１５の内端部を覆い、封止する。 The cross-sectional view of FIG. 1 shows an outline of this power unit.
The power unit 1 includes a power module 10 and a heat sink 20.
The power module 10 is modularized with a resin-sealed package. 2 and 3 are perspective views of the power module 10.
The power module 10 is installed on a sealing resin 11, a metal plate 12 having a lower surface 12a exposed on the sealing resin 11, and an upper surface 12b side opposite to the lower surface 12a of the metal plate 12, and a power semiconductor. It has a circuit portion 14 including the switching element 13 and sealed with the sealing resin 11, and an electrode terminal 15 in which an electrode of the circuit portion 14 is taken out to the outside and an inner end portion is sealed with the sealing resin 11.
For example, in the power module 10, the power semiconductor switching element 13 and the electrode terminals 15 are mounted on the upper surface of a circuit board having conductor patterns on the front and back sides, and necessary wiring connections are made with bonding wires or the like to form the circuit section 14. The conductive solid pattern on the lower surface of the circuit board is bonded to the upper surface 12b of the metal plate 12 with a heat conductive bonding agent 30 such as solder. An insulating layer made of ceramic or the like may be formed on the upper surface 12b of the metal plate 12, and a conductor pattern for connecting the power semiconductor switching element 13 or the like may be formed thereon.
After that, a resin sealing process using the sealing resin 11 is performed.
The sealing resin 11 covers and seals the surface of the metal plate 12 other than the lower surface 12a, the circuit portion 14 including the power semiconductor switching element 13, and the inner ends of the electrode terminals 15.

ヒートシンク２０は、凹部２１を有する。凹部２１を設けられた面を上面とする。ヒートシンク２０の下面には放熱突起２２が形成されている。
凹部２１の底面２１ａに金属板１２の下面１２ａがはんだ等の熱伝導性接合剤３０により接合されることで、熱的及び機械的に接続されている。
以上により、パワー半導体スイッチング素子１３からの熱が金属板１２を介してヒートシンク２０に伝導するようにされている。 The heat sink 20 has a recess 21. The surface provided with the concave portion 21 is referred to as an upper surface. A heat dissipation protrusion 22 is formed on the lower surface of the heat sink 20.
The bottom surface 21a of the recess 21 is joined to the bottom surface 12a of the metal plate 12 with a heat conductive adhesive 30 such as solder, so that the bottom surface 21a is thermally and mechanically connected.
As described above, the heat from the power semiconductor switching element 13 is conducted to the heat sink 20 via the metal plate 12.

図１に示すように、金属板１２が露出する面に隣接する封止樹脂１１の側面１１ｓから電極端子１５が突出している。電極端子１５の封止樹脂１１の外に突出した部分を外部突出部とする。電極端子１５の外部突出部は、凹部２１の上端開口より上位置に配置されている。すなわち、電極端子１５の外部突出部の最下端位置Ｇ１と、凹部２１の上端開口位置Ｇ２との間にギャップＧＡが設けられる。凹部２１の上端開口の周囲のヒートシンク２０の上面は、上端開口位置Ｇ２と同じ位置でフラットに形成されている。
したがって、パワーモジュール１０の底部を凹部２１に配置する作業において、凹部２１の縁や周囲上面に電極端子１５を接触させることが防がれる。したがって、組立性が向上する。また、電極端子１５を凹部２１の縁等への衝突によって損傷させることなく組み立てることができ、電極端子１５をヒートシンク２０に接触させた状態で組み立てることもなく、パワーユニット１の品質が向上する。
電極端子１５の外部突出部は、図１の右側に示すようにストレートに形成してもよい。また、電極端子１５の外部突出部を、下に曲げた後に上に曲げても、電極端子１５の外部突出部の最下端位置Ｇ１が、凹部２１の上端開口位置Ｇ２より上になるようにギャップＧＡを設ければ同様の効果が得られる。
また、図１の左側に示すように電極端子１５の外部突出部を曲げ形成する場合は、外部突出部の先端部１５ａが、封止樹脂１１の側面１１ｓから突出する根元端部１５ｂより上位置に配置された構成を実施することが好ましい。これにより、パワーモジュール１０の底部を凹部２１に配置する作業において、パワーモジュール１０が傾くことがあっても、凹部２１の周囲上面に電極端子１５の先端部１５ａを接触させることがより確実に防がれる。 As shown in FIG. 1, the electrode terminal 15 projects from the side surface 11s of the sealing resin 11 adjacent to the surface where the metal plate 12 is exposed. A portion of the electrode terminal 15 protruding outside the sealing resin 11 is referred to as an external protruding portion. The external protruding portion of the electrode terminal 15 is arranged above the upper end opening of the recess 21. That is, the gap GA is provided between the lowermost end position G1 of the external protruding portion of the electrode terminal 15 and the upper end opening position G2 of the recess 21. The upper surface of the heat sink 20 around the upper end opening of the recess 21 is formed flat at the same position as the upper end opening position G2.
Therefore, in the work of disposing the bottom portion of the power module 10 in the recess 21, it is possible to prevent the electrode terminal 15 from coming into contact with the edge of the recess 21 or the upper surface of the periphery thereof. Therefore, the assemblability is improved. Further, the electrode terminal 15 can be assembled without being damaged by collision with the edge of the recess 21 and the like, and the quality of the power unit 1 is improved without assembling the electrode terminal 15 in contact with the heat sink 20.
The external protruding portion of the electrode terminal 15 may be formed straight as shown on the right side of FIG. Further, even if the external protruding portion of the electrode terminal 15 is bent downward and then bent upward, the bottom end position G1 of the external protruding portion of the electrode terminal 15 is positioned above the upper end opening position G2 of the recess 21. The same effect can be obtained by providing GA.
When the external protruding portion of the electrode terminal 15 is formed by bending as shown on the left side of FIG. 1, the tip portion 15a of the external protruding portion is located above the root end portion 15b protruding from the side surface 11s of the sealing resin 11. It is preferred to implement the arrangement arranged in. Thereby, in the work of disposing the bottom portion of the power module 10 in the recess 21, even if the power module 10 is inclined, it is more reliably prevented that the tip portion 15a of the electrode terminal 15 is brought into contact with the upper surface around the recess 21. Get off.

図４は、３つのパワーモジュール１０を搭載し、液冷式に構成したパワーユニット１の断面図である。ヒートシンク２０の斜視図を図５、図６に、上面図を図７に示す。
図４に示すようにパワーユニット１は、パワーモジュール１０を複数備え、ヒートシンク２０には、凹部２１が複数設けられる。本実施形態ではパワーモジュール１０及び凹部２１が３ずつである。パワーユニット１は、一の凹部２１に対して一のパワーモジュール１０がそれぞれ、図１に示した接合構造で配設されたものである。
ヒートシンク２０の下面にジャケット３１が、放熱突起２２を内部に収めるようにパッキン３３で周囲を水密されて取り付けられ、冷媒液が流通する流路空間３２が形成される。図７に示すように、ヒートシンク２０は、ジャケット３１との間でパッキン３３を圧着状態で固定するボルトを挿通する複数の取付孔２３、及びパッキン３３の取付部３３Ｇを有する。複数の取付孔２３とパッキン３３の取付部３３Ｇは、凹部２１の周囲の厚みのある部分とされ、パッキン３３、ジャケット３１の取り付けによるヒートシンク２０の変形は避けられる。 FIG. 4 is a cross-sectional view of a power unit 1 that is equipped with three power modules 10 and is liquid-cooled. 5 and 6 are perspective views of the heat sink 20, and FIG. 7 is a top view thereof.
As shown in FIG. 4, the power unit 1 includes a plurality of power modules 10, and the heat sink 20 has a plurality of recesses 21. In this embodiment, there are three power modules 10 and three recesses 21. The power unit 1 is one in which one power module 10 is arranged in one recess 21 with the joint structure shown in FIG.
A jacket 31 is attached to the lower surface of the heat sink 20 in a watertight manner by a packing 33 so that the heat dissipation protrusions 22 are housed therein, and a flow passage space 32 through which a refrigerant liquid flows is formed. As shown in FIG. 7, the heat sink 20 has a plurality of mounting holes 23 through which bolts for fixing the packing 33 in a crimped state with the jacket 31 are inserted, and a mounting portion 33G of the packing 33. The plurality of mounting holes 23 and the mounting portion 33G of the packing 33 are thick portions around the recess 21, and deformation of the heat sink 20 due to mounting of the packing 33 and the jacket 31 is avoided.

３つのパワーモジュール１０，１０，１０は、個々に独立してモジュール化されており、共通の回路基板等で一体化されていない。したがって、ヒートシンク２０の凹部２１，２１，２１の位置精度は厳しく求められず、ヒートシンク２０と３つのパワーモジュール１０，１０，１０との間に大きな熱応力の発生は避けられる。   The three power modules 10, 10, 10 are individually modularized and are not integrated by a common circuit board or the like. Therefore, the positional accuracy of the recesses 21, 21, 21 of the heat sink 20 is not strictly required, and the occurrence of large thermal stress between the heat sink 20 and the three power modules 10, 10, 10 can be avoided.

次に、改めて本パワーユニットの製造方法につき説明する。
パワーモジュール１０の製造工程を実施しパワーモジュール１０を完成させる。そのパワーモジュール１０の製造工程の中に、樹脂封止工程が含まれる。樹脂封止工程では、パワーモジュール１０のうち封止樹脂１１以外の構成による組立体を成形型に設置し、成形型に樹脂を充填するなどの方法により同組立体の封止箇所を樹脂で覆うとともに、成形型の成形面で封止樹脂１１の外面を成形し、封止樹脂１１を硬化させるための熱処理を実行する。
上記のような凹部２１を有したヒートシンク２０を別途、準備しておく。
以上のように樹脂封止工程を実施した後、ヒートシンク２０の凹部２１にパワーモジュール１０を配置し、凹部２１の底面２１ａに金属板１２の下面１２ａを接合するモジュール実装工程を実施する。 Next, a method for manufacturing the power unit will be described again.
The manufacturing process of the power module 10 is performed to complete the power module 10. A resin sealing process is included in the manufacturing process of the power module 10. In the resin sealing step, an assembly having a configuration other than the sealing resin 11 of the power module 10 is installed in a molding die, and the sealing place of the assembly is covered with the resin by a method such as filling the molding die with resin. At the same time, the outer surface of the sealing resin 11 is molded with the molding surface of the molding die, and heat treatment for curing the sealing resin 11 is performed.
The heat sink 20 having the recess 21 as described above is separately prepared.
After the resin sealing step is performed as described above, the power module 10 is placed in the recess 21 of the heat sink 20 and the module mounting step of joining the lower surface 12a of the metal plate 12 to the bottom surface 21a of the recess 21 is performed.

以上の実施形態のパワーユニット１によれば、パワーモジュール１０の金属板１２の下面１２ａがヒートシンク２０の薄肉化した凹部２１に熱的に接続するので放熱性が向上する。また封止樹脂１１まで含めてモジュール化されているので、パワーモジュール１０の封止樹脂１１を硬化させるための熱処理工程による熱負荷をヒートシンク２０に与えることがない。凹部２１による薄肉部を有するヒートシンク２０が樹脂封止工程の加熱により変形すること避けられ、製造精度を向上することができる。ヒートシンク２０に変形（歪み）が生じていないから、パッキン３３、ジャケット３１の取り付け後の水冷構造の水密性が向上する。
また、電極端子１５の外部突出部が凹部２１の上端開口より上位置に配置されているから、パワーモジュール１０の底部を凹部２１に配置する作業において、凹部２１の縁や周囲上面に電極端子１５を接触させることが防がれ、組立性が向上する。
以上の実施形態の製造方法によれば、凹部２１による薄肉部を有するヒートシンク２０を、パワーモジュール１０の樹脂封止工程時の加熱により変形させることが避けられ、パワーユニット１の製造精度を向上することができる。 According to the power unit 1 of the above embodiment, the lower surface 12a of the metal plate 12 of the power module 10 is thermally connected to the thinned recess 21 of the heat sink 20, so that the heat dissipation is improved. Further, since the encapsulating resin 11 is also included in the module, the heat sink 20 is not subjected to a heat load due to the heat treatment process for curing the encapsulating resin 11 of the power module 10. It is possible to prevent the heat sink 20 having the thin portion by the recess 21 from being deformed by the heating in the resin sealing step, and it is possible to improve the manufacturing accuracy. Since the heat sink 20 is not deformed (distorted), the water tightness of the water cooling structure after the packing 33 and the jacket 31 are attached is improved.
Further, since the external protruding portion of the electrode terminal 15 is disposed above the upper end opening of the recess 21, the electrode terminal 15 is disposed on the edge of the recess 21 and the surrounding upper surface in the work of disposing the bottom of the power module 10 in the recess 21. Are prevented from being brought into contact with each other and the assembling property is improved.
According to the manufacturing method of the above-described embodiment, it is possible to avoid deforming the heat sink 20 having the thin portion by the recess 21 by heating during the resin sealing process of the power module 10, and improve the manufacturing accuracy of the power unit 1. You can

なお、本開示は上述の実施形態に限定されるものでなく、本開示の要旨を逸脱しない範囲で種々の変更を施してよいことは勿論である。
パワー半導体スイッチング素子１３は、例えばＩＧＢＴ（Ｉｎｓｕｌａｔｅｄ Ｇａｔｅ Ｂｉｐｏｌａｒ Ｔｒａｎｓｉｓｔｏｒ）、ＭＯＳＦＥＴ（Ｍｅｔａｌ Ｏｘｉｄｅ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｆｉｅｌｄ Ｅｆｆｅｃｔ Ｔｒａｎｓｉｓｔｏｒ）、サイリスタなどが適用されるがこれらに限定されるものではない。
３つのパワーモジュールを組み込んだ１つのパワーユニットを開示したが、１つのパワーユニットへのパワーモジュールの組込み数は、１つでもよいし、３つ以外の複数でもよい。
また、ヒートシンク２０に放熱突起を設けること、液冷式にすること等は任意である。
本開示に記載のパワーユニット１は、電気自動車等の種々の電気装置に用いられてもよい。 It should be noted that the present disclosure is not limited to the above-described embodiment, and various modifications may be made without departing from the gist of the present disclosure.
As the power semiconductor switching element 13, for example, an IGBT (Insulated Gate Bipolar Transistor), a MOSFET (Metal Oxide Semiconductor Field Effect Transistor), a thyristor, or the like is applied, but the invention is not limited thereto.
Although one power unit incorporating three power modules has been disclosed, the number of power modules incorporated into one power unit may be one or may be a plurality other than three.
Further, it is optional to provide the heat sink 20 with a heat radiating projection, to use a liquid cooling type, or the like.
The power unit 1 described in the present disclosure may be used in various electric devices such as an electric vehicle.

１ パワーユニット
１０ パワーモジュール
１１ 封止樹脂
１２ 金属板
１２ａ 下面
１３ パワー半導体スイッチング素子
１４ 回路部
１５ 電極端子
２０ ヒートシンク
２１ 凹部 1 Power Unit 10 Power Module 11 Sealing Resin 12 Metal Plate 12a Lower Surface 13 Power Semiconductor Switching Element 14 Circuit Section 15 Electrode Terminal 20 Heat Sink 21 Recess

Claims (5)

パワーモジュールと、ヒートシンクとを備えるパワーユニットであって、
前記パワーモジュールは、
封止樹脂と、
前記封止樹脂に一面を露出させた金属板と、
前記金属板の前記一面の反対面側に設置され、パワー半導体スイッチング素子を含み、前記封止樹脂に封止された回路部と、
前記回路部の電極を外部に取り出し、内端部が前記封止樹脂に封止された電極端子と
を有し、
前記ヒートシンクは、凹部を有し、
前記凹部の底面に前記金属板の前記一面が熱的及び機械的に接続され、前記パワー半導体スイッチング素子からの熱が前記金属板を介して前記ヒートシンクに伝導するようにされ、
前記金属板が露出する面に隣接する前記封止樹脂の側面から突出した前記電極端子の外部突出部が、前記凹部の上端開口より上位置に配置されたパワーユニット。 A power unit including a power module and a heat sink,
The power module is
Sealing resin,
A metal plate having one surface exposed to the sealing resin,
A circuit part installed on the opposite side of the one surface of the metal plate, including a power semiconductor switching element, and sealed with the sealing resin,
The electrode of the circuit portion is taken out to the outside, and the inner end portion has an electrode terminal sealed with the sealing resin,
The heat sink has a recess,
The one surface of the metal plate is thermally and mechanically connected to the bottom surface of the recess, and heat from the power semiconductor switching element is conducted to the heat sink via the metal plate.
A power unit in which an external projecting portion of the electrode terminal projecting from a side surface of the sealing resin adjacent to a surface on which the metal plate is exposed is disposed above an upper end opening of the recess. 前記外部突出部の先端部が、前記封止樹脂の側面から突出する根元端部より上位置に配置された請求項１に記載のパワーユニット。 The power unit according to claim 1, wherein a tip portion of the external protruding portion is arranged at a position higher than a root end portion protruding from a side surface of the sealing resin. 前記パワーモジュールを複数備え、
前記ヒートシンクには、前記凹部が複数設けられ、
一の前記凹部に対して一の前記パワーモジュールが配設された請求項１又は請求項２に記載のパワーユニット。 A plurality of the power modules,
The heat sink is provided with a plurality of the recesses,
The power unit according to claim 1 or claim 2, wherein one power module is arranged for one recess. 請求項１から請求項３のうちいずれか一に記載のパワーユニットの製造方法であって、
前記パワーモジュールの前記封止樹脂を硬化させるための熱処理を含めた樹脂封止工程を実施した後、
前記ヒートシンクの前記凹部に前記パワーモジュールを配置し、前記凹部の底面に前記金属板の前記一面を接合するモジュール実装工程を実施するパワーユニットの製造方法。 A method of manufacturing a power unit according to any one of claims 1 to 3,
After performing a resin sealing process including a heat treatment for curing the sealing resin of the power module,
A method of manufacturing a power unit, comprising: disposing the power module in the recess of the heat sink and performing a module mounting step of bonding the one surface of the metal plate to a bottom surface of the recess. 請求項１から請求項３のうちいずれか一に記載のパワーユニットを有する、
電気装置。 A power unit according to any one of claims 1 to 3,
Electrical equipment.
JP2018202394A 2018-10-29 2018-10-29 Power unit, method of manufacturing the same, and electric device having power unit Pending JP2020072094A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2018202394A JP2020072094A (en) 2018-10-29 2018-10-29 Power unit, method of manufacturing the same, and electric device having power unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018202394A JP2020072094A (en) 2018-10-29 2018-10-29 Power unit, method of manufacturing the same, and electric device having power unit

Publications (1)

Publication Number Publication Date
JP2020072094A true JP2020072094A (en) 2020-05-07

Family

ID=70549613

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018202394A Pending JP2020072094A (en) 2018-10-29 2018-10-29 Power unit, method of manufacturing the same, and electric device having power unit

Country Status (1)

Country Link
JP (1) JP2020072094A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023022001A1 (en) * 2021-08-20 2023-02-23 三菱電機株式会社 Power module and power conversion device

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0499360A (en) * 1990-08-18 1992-03-31 Mitsubishi Electric Corp Manufacture of heatsink for semiconductor device
JPH05206343A (en) * 1991-09-25 1993-08-13 Intel Corp Heat sink, electronic assembly and its assembly method
JP2013115297A (en) * 2011-11-30 2013-06-10 Hitachi Ltd Power semiconductor device
JP2014099504A (en) * 2012-11-14 2014-05-29 Nittoshinko Corp Heat dissipation member with adhesive layer and semiconductor device
WO2016002846A1 (en) * 2014-07-02 2016-01-07 住友ベークライト株式会社 Semiconductor device
JP2017168570A (en) * 2016-03-15 2017-09-21 富士電機株式会社 Semiconductor module and manufacturing method of semiconductor module
JP2017199829A (en) * 2016-04-28 2017-11-02 日産自動車株式会社 Power module structure
JP2018085858A (en) * 2016-11-24 2018-05-31 富士電機株式会社 Electric power conversion system

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0499360A (en) * 1990-08-18 1992-03-31 Mitsubishi Electric Corp Manufacture of heatsink for semiconductor device
JPH05206343A (en) * 1991-09-25 1993-08-13 Intel Corp Heat sink, electronic assembly and its assembly method
JP2013115297A (en) * 2011-11-30 2013-06-10 Hitachi Ltd Power semiconductor device
JP2014099504A (en) * 2012-11-14 2014-05-29 Nittoshinko Corp Heat dissipation member with adhesive layer and semiconductor device
WO2016002846A1 (en) * 2014-07-02 2016-01-07 住友ベークライト株式会社 Semiconductor device
JP2017168570A (en) * 2016-03-15 2017-09-21 富士電機株式会社 Semiconductor module and manufacturing method of semiconductor module
JP2017199829A (en) * 2016-04-28 2017-11-02 日産自動車株式会社 Power module structure
JP2018085858A (en) * 2016-11-24 2018-05-31 富士電機株式会社 Electric power conversion system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023022001A1 (en) * 2021-08-20 2023-02-23 三菱電機株式会社 Power module and power conversion device

Similar Documents

Publication Publication Date Title
US10770380B2 (en) Semiconductor device and method for manufacturing semiconductor device
US8183094B2 (en) Method of manufacturing a semiconductor device having a semiconductor chip and resin sealing portion
JP5661183B2 (en) Semiconductor device and manufacturing method thereof
US8981552B2 (en) Power converter, semiconductor device, and method for manufacturing power converter
JP4899481B2 (en) Manufacturing method of resin-encapsulated semiconductor device having a heat radiator exposed outside
JP5936310B2 (en) Power semiconductor module and its mounting structure
US9837338B2 (en) Semiconductor module with mounting case and method for manufacturing the same
JP5328645B2 (en) Power semiconductor module
US20140167237A1 (en) Power module package
KR20080038180A (en) Reversible-multiple footprint package and method of manufacturing
JP2011155088A (en) Semiconductor device module
JP2006066813A (en) Semiconductor device
JP4967701B2 (en) Power semiconductor device
EP3649671B1 (en) Power semiconductor module with a housing connected onto a mould compound and corresponding manufacturing method
CN106298700B (en) Semiconductor device with a plurality of semiconductor chips
JP2020136369A (en) Semiconductor module and manufacturing method thereof
WO2019038876A1 (en) Semiconductor device
JP2020072094A (en) Power unit, method of manufacturing the same, and electric device having power unit
JP2013183022A (en) Semiconductor device and manufacturing apparatus of the same
JP2015023226A (en) Wide gap semiconductor device
JP2020072095A (en) Power unit, method of manufacturing the same, electric device having power unit, and heat sink
JP7118839B2 (en) POWER UNIT, POWER UNIT MANUFACTURING METHOD AND ELECTRICAL DEVICE HAVING POWER UNIT
JP2020072101A (en) Power unit, method of manufacturing the same, electric device having power unit, and heat sink
JP2020072102A (en) Power unit, method of manufacturing the same, and electric device having power unit
JP2012238737A (en) Semiconductor module and manufacturing method therefor

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20210112

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20211021

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20211102

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20211221

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20220517

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20221115