CN117727773B - GaN-based HEMT epitaxial wafer, preparation method thereof and HEMT device - Google Patents
GaN-based HEMT epitaxial wafer, preparation method thereof and HEMT device Download PDFInfo
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- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 1
- 230000003446 memory effect Effects 0.000 description 1
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Abstract
The invention discloses a GaN-based HEMT epitaxial wafer, a preparation method thereof and an HEMT device, and relates to the field of semiconductor devices. The GaN-based HEMT epitaxial wafer comprises a substrate, and a high-resistance layer, a channel layer, a barrier layer and a cap layer which are sequentially laminated on the substrate; the high-resistance layer comprises a first sub-layer and a second sub-layer which are sequentially laminated on the substrate; the first sub-layer includes alternately stacked P-type AlGaN layers and Ga 2O3 layers, and the second sub-layer includes alternately stacked BGaN layers and (AlGa) 2O3 layers. By implementing the invention, the leakage channel can be effectively reduced, and the reliability of the device is improved.
Description
Technical Field
The invention relates to the technical field of photoelectricity, in particular to a GaN-based HEMT epitaxial wafer, a preparation method thereof and an HEMT device.
Background
The GaN-based HEMT device is an excellent solution for high-frequency and high-power switch application due to its excellent characteristics of high electron mobility, high critical breakdown field strength, high electron saturation velocity, and the like. One of the key links for realizing the high-quality GaN power device is to grow a high-resistance layer, wherein the high-resistance layer can reduce leakage current in the HEMT device, maintain the two-dimensional characteristic of electron gas, improve the working frequency of the device, inhibit the current collapse effect and improve the breakdown voltage of the HEMT device. The conventional high-resistance layer generally adopts a C or Fe doped GaN layer to realize the introduction of a deep energy level acceptor, thereby realizing a high-resistance state. But the following disadvantages exist: the Fe source has a memory effect and can affect the channel layer of the device so as to deteriorate the characteristics of the device; the C source requires additional cost and is difficult to control uniformly. In addition, doping also reduces the crystal quality of the high-resistance layer, which can cause the high-resistance layer to easily recombine hot electrons under certain specific scenes (high current, high voltage and high temperature), so that the concentration of two-dimensional electron gas in a channel is reduced, and the performance of the device is weakened or even fails.
Disclosure of Invention
The invention aims to solve the technical problem of providing a GaN-based HEMT epitaxial wafer, a preparation method thereof and an HEMT device, which can improve the resistivity of a high-resistance layer, reduce leakage current and improve the reliability of the HEMT epitaxial wafer.
In order to solve the technical problems, the invention provides a GaN-based HEMT epitaxial wafer, which comprises a substrate, a high-resistance layer, a channel layer, a barrier layer and a cap layer, wherein the high-resistance layer, the channel layer, the barrier layer and the cap layer are sequentially laminated on the substrate; the high-resistance layer comprises a first sub-layer and a second sub-layer which are sequentially laminated on the substrate;
The first sub-layer comprises a P-type AlGaN layer and a Ga 2O3 layer which are alternately laminated, and the cycle number of the first sub-layer is 5-15; the thickness of the P-type AlGaN layer is 10 nm-30 nm, the doping concentration is 1 multiplied by 10 15cm-3~1×1018cm-3, and the Al component accounts for 0.2-0.7; the thickness of the Ga 2O3 layer is 10 nm-30 nm;
The second sub-layer comprises alternately laminated BGaN layers and (AlGa) 2O3 layers, and the cycle number of the second sub-layer is 5-15; the thickness of the BGaN layer is 5 nm-20 nm, and the B component accounts for 0.1-0.3; the thickness of the (AlGa) 2O3 layer is 15-30 nm, and the Al component accounts for 0.2-0.7.
As an improvement of the technical scheme, the thickness of the P-type AlGaN layer is 10 nm-20 nm, the doping concentration is 8 multiplied by 10 15cm-3~1×1017cm-3, and the Al component accounts for 0.35-0.6;
The thickness of the Ga 2O3 layer is 15 nm-30 nm;
The thickness of the BGaN layer is 5 nm-12 nm, and the B component accounts for 0.15-0.25;
The thickness of the (AlGa) 2O3 layer is 20-30 nm, and the Al component accounts for 0.4-0.7.
As an improvement of the technical scheme, the Al component in the P-type AlGaN layer is changed in a decreasing manner along the growth direction of the GaN-based HEMT epitaxial wafer.
As an improvement of the technical scheme, the B component in the BGaN layer is changed in a descending way along the growth direction of the GaN-based HEMT epitaxial wafer.
As an improvement of the above technical solution, the Al composition in the (AlGa) 2O3 layer exhibits an increasing change along the growth direction of the GaN-based HEMT epitaxial wafer.
As improvement of the technical scheme, the proportion of the Al component in the P-type AlGaN layer is more than or equal to 0.4, and the proportion of the B component in the BGaN layer is less than or equal to 0.2, so that the lattice constant of the BGaN layer is larger than that of the P-type AlGaN layer.
As an improvement of the technical scheme, the Al component in the (AlGa) 2O3 layer is more than or equal to 0.6, so that the forbidden bandwidth is more than or equal to 6.5eV.
Correspondingly, the invention also discloses a preparation method of the GaN-based HEMT epitaxial wafer, which is used for preparing the GaN-based HEMT epitaxial wafer and comprises the following steps:
providing a substrate, and sequentially growing a high-resistance layer, a channel layer, a barrier layer and a cap layer on the substrate; the high-resistance layer comprises a first sub-layer and a second sub-layer which are sequentially laminated on the substrate;
the first sub-layer includes alternately stacked P-type AlGaN layers and Ga 2O3 layers, and the second sub-layer includes alternately stacked BGaN layers and (AlGa) 2O3 layers.
As an improvement of the technical scheme, the growth temperature of the high-resistance layer is 1000-1200 ℃, and the growth pressure is 50-500 torr.
Correspondingly, the invention also discloses a GaN-based HEMT device, which comprises the GaN-based HEMT epitaxial wafer.
The implementation of the invention has the following beneficial effects:
in the GaN-based HEMT epitaxial wafer, the high-resistance layer comprises a first sub-layer and a second sub-layer, wherein the first sub-layer comprises a P-type AlGaN layer and a Ga 2O3 layer which are alternately stacked, and the second sub-layer comprises a BGaN layer and an (AlGa) 2O3 layer which are alternately stacked. The holes generated by the P-type AlGaN layer can neutralize electrons brought by the substrate, so that a leakage channel is reduced; the gap width of the Ga 2O3 layer is large, the peak voltage is high, the peak voltage which can be born by the device is increased, the breakdown resistance is enhanced, and the reliability is improved; and the Ga 2O3 layer also provides a good foundation for the second sub-layer which grows subsequently, so that the crystal quality of the second sub-layer is effectively improved. The BGaN layer in the second sub-layer can be further filled with defects, so that the crystal quality of the second sub-layer is improved, and the breakdown resistance is improved. The band gap width of one (AlGa) 2O3 layer is very high, and the surface of the (AlGa) 2O3 layer can effectively block the migration of electrons due to the pinning effect of the Fermi level, so that the resistivity is greatly improved, the leakage channel is reduced, and the reliability of the device is improved.
Drawings
Fig. 1 is a schematic structural diagram of a GaN-based HEMT epitaxial wafer according to an embodiment of the present invention;
fig. 2 is a flowchart of a method for preparing a GaN-based HEMT epitaxial wafer according to an embodiment of the invention.
Detailed Description
The present invention will be described in further detail below in order to make the objects, technical solutions and advantages of the present invention more apparent.
Unless otherwise indicated or contradicted, terms or phrases used herein have the following meanings:
In the present invention, "preferred" is merely to describe embodiments or examples that are more effective, and it should be understood that they are not intended to limit the scope of the present invention.
In the invention, the technical characteristics described in an open mode comprise a closed technical scheme composed of the listed characteristics and also comprise an open technical scheme comprising the listed characteristics.
In the present invention, the numerical range is referred to, and both ends of the numerical range are included unless otherwise specified.
In order to solve the above problems, the present invention provides a GaN-based HEMT epitaxial wafer, as shown in fig. 1, comprising a substrate 1, a high-resistance layer 2, a channel layer 3, a barrier layer 4 and a cap layer 5 sequentially stacked on the substrate 1; wherein the high-resistance layer 2 comprises a first sub-layer 21 and a second sub-layer 22 which are sequentially laminated on the substrate 1; the first sub-layer 21 includes P-type AlGaN layers 211 and Ga 2O3 layers 212 alternately stacked, and the second sub-layer 22 includes BGaN layers 221 and (AlGa) 2O3 layers 222 alternately stacked.
In the high-resistance layer 2, holes generated by the P-type AlGaN layer 211 can neutralize electrons brought by the substrate 1, so that leakage channels are reduced; the Ga 2O3 layer 212 has large forbidden bandwidth, large electron transition potential and high peak voltage, so that the peak voltage which can be born by the device is increased, the breakdown resistance is enhanced, and the reliability is improved. Meanwhile, since the lattice constant of the Ga 2O3 layer 212 is larger than that of the P-type AlGaN layer 211, compressive stress can be accumulated during periodic growth, so that tensile stress brought by the substrate 1 is buffered, and the crystal quality of each subsequent layer is improved. The BGaN layer 221 in the second sub-layer 22 may further fill the defect, improve the crystal quality, and improve the breakdown resistance. The band gap width of one (AlGa) 2O3 layer is very high, and the surface of the (AlGa) 2O3 layer can effectively block the migration of electrons due to the pinning effect of the Fermi level, so that the resistivity is greatly improved, the leakage channel is reduced, and the reliability of the device is improved. Meanwhile, the difference of lattice constants of the BGaN layer and the (AlGa) 2O3 layer also enables the growth of the BGaN layer to accumulate compressive stress and further buffer tensile stress. In addition, through the growth of the high-resistance layer, charges can not be stored at the top of the high-resistance layer, the concentration of two-dimensional electron gas in a channel can not be influenced, too much two-dimensional electron gas in the channel layer can not be captured, the device is invalid, and the device based on the HEMT epitaxial wafer can be suitable for severe application scenes such as high pressure, high temperature and the like.
The number of cycles of the first sub-layer 21 is 5 to 15, and is exemplified by 5, 8, 10, 12 or 14, but not limited thereto.
The thickness of the P-type AlGaN layer 211 is 10nm to 30nm, and is exemplified by 11nm, 14nm, 17nm, 21nm, 24nm, or 28nm, but not limited thereto. Preferably, the thickness of the P-type AlGaN layer 221 is 10nm to 20nm.
The doping element in the P-type AlGaN layer 211 is Mg, the doping concentration is 1×10 15cm-3~1×1018cm-3, and when the doping concentration is too low, electrons from the bottom layer are difficult to be effectively consumed; too high a doping concentration results in poor lattice quality of the layer. The doping concentration of the P-type AlGaN layer 211 is 3×1015cm-3、7×1015cm-3、9×1015cm-3、3×1016cm-3、8×1016cm-3、4×1017cm-3 or 8×10 17cm-3, for example, but not limited thereto. Preferably 8X 10 15cm-3~1×1017cm-3.
The P-type AlGaN layer 211 has an Al composition of 0.2 to 0.7, and exemplary ratios are, but not limited to, 0.24, 0.29, 0.35, 0.4, 0.46, 0.57, 0.6, or 0.68. Preferably 0.35 to 0.6. The ratio of the Al component in the P-type AlGaN layer 211 means a ratio of the number of Al atoms to the total number of Al atoms and Ga atoms.
The thickness of the Ga 2O3 layer 212 is 10 nm-30 nm, and if the thickness is too large, the compressive stress is easily relaxed. Illustratively, the Ga 2O3 layer 212 has a thickness of 12nm, 14nm, 18nm, 20nm, 21nm, 24nm, or 27nm, but is not limited thereto. Preferably, the thickness of Ga 2O3 layer 212 is 15nm to 30nm, more preferably 18nm to 24nm.
The number of cycles of the second sub-layer 22 is 5 to 15, and is exemplified by, but not limited to, 5, 8, 10, 12 or 14.
The thickness of the BGaN layer 221 is 5nm to 20nm, and is exemplified by 8nm, 11nm, 14nm, or 17nm, but not limited thereto. Preferably 5nm to 12nm.
The B component in the BGaN layer 221 has a ratio of 0.1 to 0.3, and exemplary values are 0.12, 0.16, 0.22, or 0.28, but not limited thereto. Preferably, the B component in the BGaN layer 221 accounts for 0.15 to 0.25. The ratio of the B component is the ratio of the B atoms to the total number of B atoms and Ga atoms.
Wherein the thickness of the (AlGa) 2O3 layer 222 is 15nm to 30nm, and is exemplified by 18nm, 22nm, 25nm or 28nm, but not limited thereto. Preferably 20nm to 30nm.
Wherein the Al component in the (AlGa) 2O3 layer 222 is 0.2-0.7, and exemplary is 0.22, 0.31, 0.44, 0.55, 0.64 or 0.68, but not limited thereto. Preferably 0.4 to 0.7. The ratio of the Al component in the (AlGa) 2O3 layer 222 means the ratio of the number of Al atoms to the total number of Al atoms and Ga atoms.
Preferably, in one embodiment of the present invention, the Al component of the P-type AlGaN layer 211 is equal to or greater than 0.4 and the B component of the BGaN layer 221 is equal to or less than 0.2, so that the lattice constant of the BGaN layer 221 is greater than that of the P-type AlGaN layer 211. Based on the above ratio, the compressive stress accumulated in the first sub-layer 21 and the second sub-layer 22 can be controlled, and the defects of cracking and the like of the high-resistance layer 2 in the growth process caused by overlarge stress can be avoided. But simultaneously, the compressive stress is maintained to a relatively large level, so that the tensile stress caused by the cooling of the substrate is buffered, and the crystal quality of the whole epitaxial wafer is improved; furthermore, the reasonable compressive stress level can compensate the tensile stress generated by the electric field of part of the barrier layer, so that leakage current generated by damage of the device is avoided.
Preferably, in one embodiment of the present invention, the ratio of the Al component in the (AlGa) 2O3 layer 222 is greater than or equal to 0.6, so that the forbidden band width is greater than or equal to 6.5eV, and when the forbidden band width is greater, the electric charge accumulated on the surface of the high-resistance layer 2 is greatly reduced, and is basically neutral, so that the two-dimensional electron gas concentration of the channel region is increased, and various performances of the device are improved. Meanwhile, the hot electrons are difficult to form traps on the high-resistance layer, so that the saturated drain-source current is reduced, and the device is invalid.
Preferably, in one embodiment of the present invention, along the growth direction of the GaN-based HEMT epitaxial wafer, the Al composition in the (AlGa) 2O3 layer 222 is increasingly changed, and based on the above control, not only the concentration of the two-dimensional electron gas in the hook channel region but also the leakage current is improved, and the device reliability is improved.
Preferably, in one embodiment, the Al composition in the P-type AlGaN layer 211 is progressively changed along the growth direction of the GaN-based HEMT epitaxial wafer; and/or the B component in the BGaN layer is in a decreasing change along the growth direction of the GaN-based HEMT epitaxial wafer. Based on this control, compressive stress can be accumulated, improving device reliability.
Among them, the substrate 1 is a silicon substrate, a sapphire substrate, or a silicon carbide substrate, but is not limited thereto. Preferably a silicon substrate.
The channel layer 3 is an undoped GaN layer, and the thickness of the undoped GaN layer is 200 nm-500 nm.
The barrier layer 4 is an AlGaN layer, the Al component of the AlGaN layer accounts for 0.15-0.35, and the thickness of the AlGaN layer is 20-35 nm.
The cap layer 5 is a GaN layer or a SiN x layer, but is not limited thereto. Preferably a GaN layer. The thickness is 2 nm-6 nm.
Correspondingly, referring to fig. 2, the invention also discloses a preparation method of the GaN-based HEMT epitaxial wafer, which is used for preparing the GaN-based HEMT epitaxial wafer and comprises the following steps:
S1: providing a substrate;
s2: sequentially growing a high-resistance layer, a channel layer, a barrier layer and a cap layer on a substrate;
Preferably, in one embodiment of the present invention, step S2 includes the steps of:
s21: growing a high-resistance layer on the epitaxial layer;
Specifically, in one embodiment, a first sub-layer is obtained by periodically growing a P-type AlGaN layer and a Ga 2O3 layer through MOCVD; and then periodically growing a BGaN layer and an (AlGa) 2O3 layer through MOCVD to obtain a second sub-layer, namely the high-resistance layer.
Specifically, the growth temperature of the high-resistance layer is 1000-1200 ℃, and the growth pressure is 50-500 torr.
S22: growing a channel layer on the high-resistance layer;
specifically, in one embodiment, an undoped GaN layer is grown by MOCVD as a channel layer. The growth temperature is 1030-1100 ℃, and the growth pressure is 100-300 torr.
S23: growing a barrier layer on the channel layer;
specifically, in one embodiment, an AlGaN layer is grown by MOCVD as a barrier layer. The growth temperature is 1050-1200 ℃, and the growth pressure is 100-300 torr.
S24: growing a cap layer on the barrier layer;
wherein in one embodiment, the GaN layer is grown by MOCVD as a cap layer. The growth temperature is 1020-1100 ℃, and the growth pressure is 100-300 torr.
Correspondingly, the invention also discloses a GaN-based HEMT device, which comprises the GaN-based HEMT epitaxial wafer, a grid electrode, a drain electrode and a source electrode.
The invention is further illustrated by the following examples:
example 1
The embodiment provides a GaN-based HEMT epitaxial wafer, which comprises a substrate, a high-resistance layer, a channel layer, a barrier layer and a cap layer, wherein the high-resistance layer, the channel layer, the barrier layer and the cap layer are sequentially laminated on the substrate.
Wherein the substrate is a silicon substrate. The high-resistance layer comprises a first sub-layer and a second sub-layer which are sequentially laminated on the substrate. The first sub-layer is of a periodic structure, the period number is 12, each period comprises a P-type AlGaN layer and a Ga 2O3 layer which are sequentially stacked, the thickness of the P-type AlGaN layer is 15nm, the Al component ratio of the P-type AlGaN layer is 0.3, the Al component ratio is kept constant, and the thickness of the Mg doping concentration layer is 3 multiplied by 10 16cm-3,Ga2O3 and is 20nm. The second sub-layer is of a periodic structure, the period number is 14, and each period comprises a BGaN layer and an (AlGa) 2O3 layer which are sequentially stacked. The thickness of the BGaN layer was 12nm, and the B component ratio thereof was 0.25, and was maintained constant. The thickness of the (AlGa) 2O3 layer was 24nm, and its Al component ratio was 0.45, and was maintained constant.
The channel layer is an unintentionally doped GaN layer, and the thickness of the channel layer is 300nm. The barrier layer is an AlGaN layer with a thickness of 30nm and an Al composition ratio of 0.25. The cap layer is a GaN layer with a thickness of 4nm.
The preparation method of the GaN-based HEMT epitaxial wafer in the embodiment comprises the following steps:
(1) A silicon substrate is provided, loaded into MOCVD and treated in an atmosphere of H 2 at 1120 ℃ for 10min.
(2) Growing a high-resistance layer on a silicon substrate;
Specifically, a P-type AlGaN layer and a Ga 2O3 layer are grown periodically to obtain a first sub-layer; and then periodically growing a BGaN layer and an (AlGa) 2O3 layer to obtain a second sub-layer, namely the high-resistance layer.
Specifically, the growth temperature of the high-resistance layer is 1120 ℃, and the growth pressure is 300torr.
(3) Growing a channel layer on the high-resistance layer;
wherein the growth temperature is 1080 ℃, and the growth pressure is 200torr.
(4) Growing a barrier layer on the channel layer;
Wherein the growth temperature is 1140 ℃, and the growth pressure is 200torr.
(5) Growing a cap layer on the barrier layer;
Wherein, the growth temperature is 1040 ℃, and the growth pressure is 200torr.
Example 2
The present embodiment provides a GaN-based HEMT epitaxial wafer, which differs from embodiment 1 in that:
in the first sub-layer, the Al component in each P-type AlGaN layer is gradually changed along the growth direction of the epitaxial wafer, specifically gradually changed from 0.35 to 0.2, and the average Al component ratio is still maintained to be 0.3.
In the second sub-layer, the B component in each BGaN layer is gradually reduced along the growth direction of the epitaxial wafer, specifically, 0.3 is gradually reduced to 0.2, and the average B component ratio is maintained to be 0.25.
Correspondingly, the Al source and the B source are controlled to be changed in a descending way in the process of growing the two layers.
The remainder was the same as in example 1.
Example 3
The present embodiment provides a GaN-based HEMT epitaxial wafer, which differs from embodiment 2 in that:
In the second sub-layer, the Al composition in the (AlGa) 2O3 layer all showed increasing variation along the epitaxial wafer growth direction, specifically increasing from 0.4 to 0.6, with the average Al composition ratio still maintained at 0.45.
Accordingly, the flow rate of the Al source is controlled to be changed incrementally during the growth of the layer.
The remainder was the same as in example 2.
Example 4
The present embodiment provides a GaN-based HEMT epitaxial wafer, which differs from embodiment 3 in that:
in the first sub-layer, the Al component in each P-type AlGaN layer is gradually changed along the growth direction of the epitaxial wafer, specifically from 0.6 to 0.45, and the average Al component ratio is 0.5.
In the second sub-layer, the B component in each BGaN layer is gradually decreased along the growth direction of the epitaxial wafer, specifically from 0.2 to 0.1, and the average B component ratio is 0.15.
The remainder was the same as in example 3.
Example 5
The present embodiment provides a GaN-based HEMT epitaxial wafer, which differs from embodiment 4 in that:
In the second sub-layer, the Al composition in the (AlGa) 2O3 layer all showed increasing variation along the epitaxial wafer growth direction, specifically increasing from 0.7 to 0.8, with the average Al composition ratio still maintained at 0.75.
The remainder was the same as in example 4.
Comparative example 1
This comparative example provides a GaN-based HEMT epitaxial wafer, which differs from example 1 in that:
The high-resistance layer is a C-doped GaN layer, the C doping concentration is 4 multiplied by 10 18cm-3, and the thickness is 1.5 mu m. It is grown by MOCVD at 1080 ℃ and 200torr.
Comparative example 2
This comparative example provides a GaN-based HEMT epitaxial wafer, which differs from example 1 in that:
the high-resistance layer does not comprise the first sub-layer and, correspondingly, does not comprise the preparation step of this layer.
The remainder was the same as in example 1.
Comparative example 3
This comparative example provides a GaN-based HEMT epitaxial wafer, which differs from example 1 in that:
the high-resistance layer does not comprise the second sub-layer and accordingly does not comprise the step of preparing the layer.
The remainder was the same as in example 1.
The GaN-based HEMT epitaxial wafers obtained in examples 1-5 and comparative examples 1-3 were fabricated into HEMT devices, and leakage current of high-resistance layers and two-dimensional electron gas concentration of channel layers of the devices were tested, with the following specific results:
As can be seen from the comparison between the embodiment and the comparative example, by adopting the high-resistance layer provided by the invention, the leakage current can be effectively reduced, and the concentration of the two-dimensional electron gas in the channel region can be improved, so that the performances of the device can be improved.
While the foregoing is directed to the preferred embodiments of the present invention, it will be appreciated by those skilled in the art that changes and modifications may be made without departing from the principles of the invention, such changes and modifications are also intended to be within the scope of the invention.
Claims (10)
1. A GaN-based HEMT epitaxial wafer comprises a substrate, a high-resistance layer, a channel layer, a barrier layer and a cap layer which are sequentially laminated on the substrate; the high-resistance layer is characterized by comprising a first sub-layer and a second sub-layer which are sequentially laminated on the substrate;
The first sub-layer comprises a P-type AlGaN layer and a Ga 2O3 layer which are alternately laminated, and the cycle number of the first sub-layer is 5-15; the thickness of the P-type AlGaN layer is 10 nm-30 nm, the doping concentration is 1 multiplied by 10 15cm-3~1×1018cm-3, and the Al component accounts for 0.2-0.7; the thickness of the Ga 2O3 layer is 10 nm-30 nm;
The second sub-layer comprises alternately laminated BGaN layers and (AlGa) 2O3 layers, and the cycle number of the second sub-layer is 5-15; the thickness of the BGaN layer is 5 nm-20 nm, and the B component accounts for 0.1-0.3; the thickness of the (AlGa) 2O3 layer is 15-30 nm, and the Al component accounts for 0.2-0.7.
2. The GaN-based HEMT epitaxial wafer of claim 1, wherein the P-type AlGaN layer has a thickness of 10nm to 20nm, a doping concentration of 8 x 10 15cm-3~1×1017cm-3, and an Al composition ratio of 0.35 to 0.6;
The thickness of the Ga 2O3 layer is 15 nm-30 nm;
The thickness of the BGaN layer is 5 nm-12 nm, and the B component accounts for 0.15-0.25;
The thickness of the (AlGa) 2O3 layer is 20-30 nm, and the Al component accounts for 0.4-0.7.
3. The GaN based HEMT epitaxial wafer of claim 1, wherein the Al composition in said P-type AlGaN layer is progressively varied along the growth direction of said GaN based HEMT epitaxial wafer.
4. A GaN-based HEMT epitaxial wafer according to claim 1 or 3, wherein the B component of said BGaN layer is progressively changed in the growth direction of said GaN-based HEMT epitaxial wafer.
5. The GaN-based HEMT epitaxial wafer of claim 1, wherein the Al composition in said (AlGa) 2O3 layer exhibits an increasing variation along the growth direction of said GaN-based HEMT epitaxial wafer.
6. The GaN-based HEMT epitaxial wafer of claim 1, wherein the P-type AlGaN layer has an Al composition ratio of 0.4 or more and the BGaN layer has a B composition ratio of 0.2 or less, such that the BGaN layer has a lattice constant greater than that of the P-type AlGaN layer.
7. The GaN-based HEMT epitaxial wafer according to claim 1, wherein the Al composition in the (AlGa) 2O3 layer is at least 0.6 in proportion to have a forbidden band width of at least 6.5eV.
8. A method for preparing a GaN-based HEMT epitaxial wafer, for preparing the GaN-based HEMT epitaxial wafer according to any one of claims 1 to 7, comprising:
providing a substrate, and sequentially growing a high-resistance layer, a channel layer, a barrier layer and a cap layer on the substrate; the high-resistance layer comprises a first sub-layer and a second sub-layer which are sequentially laminated on the substrate;
the first sub-layer includes alternately stacked P-type AlGaN layers and Ga 2O3 layers, and the second sub-layer includes alternately stacked BGaN layers and (AlGa) 2O3 layers.
9. The method for preparing the GaN-based HEMT epitaxial wafer according to claim 8, wherein the growth temperature of the high-resistance layer is 1000-1200 ℃ and the growth pressure is 50-500 torr.
10. A GaN-based HEMT device comprising the GaN-based HEMT epitaxial wafer of any one of claims 1-7.
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