CN117718888A - Polishing pad cleaning device and polishing pad cleaning method - Google Patents
Polishing pad cleaning device and polishing pad cleaning method Download PDFInfo
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- CN117718888A CN117718888A CN202311749491.5A CN202311749491A CN117718888A CN 117718888 A CN117718888 A CN 117718888A CN 202311749491 A CN202311749491 A CN 202311749491A CN 117718888 A CN117718888 A CN 117718888A
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- 238000005498 polishing Methods 0.000 title claims abstract description 214
- 238000004140 cleaning Methods 0.000 title claims abstract description 158
- 238000000034 method Methods 0.000 title claims abstract description 24
- 238000001514 detection method Methods 0.000 claims abstract description 181
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 90
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 90
- 239000010703 silicon Substances 0.000 claims abstract description 90
- 239000007788 liquid Substances 0.000 claims abstract description 42
- 238000005507 spraying Methods 0.000 claims abstract description 19
- 230000005540 biological transmission Effects 0.000 claims description 18
- 239000007921 spray Substances 0.000 claims description 13
- 230000000712 assembly Effects 0.000 claims description 6
- 238000000429 assembly Methods 0.000 claims description 6
- 230000000694 effects Effects 0.000 abstract description 10
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 239000012498 ultrapure water Substances 0.000 description 8
- 230000033001 locomotion Effects 0.000 description 5
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 230000009471 action Effects 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 229910021642 ultra pure water Inorganic materials 0.000 description 2
- 230000004308 accommodation Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention provides a polishing pad cleaning device and a polishing pad cleaning method, and relates to the technical field of semiconductors, wherein the polishing pad cleaning device comprises: a fixed bracket; the cleaning nozzle is connected with the fixed support through the connecting arm, can rotate around the fixed support, and is used for spraying cleaning liquid to the upper polishing pad and the lower polishing pad when rotating between the upper polishing pad and the lower polishing pad; the detection assembly is fixedly connected with the cleaning nozzle and comprises a transmitting assembly and a receiving assembly, the transmitting assembly is used for transmitting detection signals to the lower polishing pad, and the receiving assembly is used for receiving the detection signals reflected by the lower polishing pad or the silicon wafer carrier disc; and the processor is used for acquiring the reflection result of the detection signal and determining whether the detection signal is reflected by the lower polishing pad or the silicon wafer carrier according to the reflection result. According to the scheme of the invention, the cleaning liquid can be sprayed onto the upper polishing pad and the lower polishing pad completely, so that the cleaning effect is ensured.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a polishing pad cleaning device and a polishing pad cleaning method.
Background
In the existing double-sided polishing process, silicon is driven by double-sided polishing equipmentThe wafer rotates, and the alkaline additive in the polishing solution is used for etching the surface of the silicon wafer to form silicate, and the silicate passes through the polishing pad and SiO in the polishing solution 2 The friction effect of the particles removes silicate on the surface of the silicon wafer, so that the damaged layer on the surface of the silicon wafer is removed, and the silicon wafer is in a highly flat mirror surface state. Thus, after each polishing is completed, silicate generated during polishing, minute debris falling from the surface of the silicon wafer, or SiO in the polishing liquid 2 Particles and the like are extremely prone to form a residue of the bond that remains on the polishing pad.
After polishing, high-purity water is used for spraying and cleaning or high-pressure cleaning on the surface of the polishing pad, when the high-purity water is sprayed and cleaned or high-pressure cleaned, the polishing pad rotates, and residues of the combination flushed out by the high-purity water are thrown out through centrifugal motion, so that no residues remain on the surface of the polishing pad, and the next polishing process is performed.
However, since the carrier plate for placing the silicon wafer in the double-sided polishing device is manually placed on the polishing pad by an operator, when each operator places the carrier plate, the operator has a slight difference in the method, so that the position of the carrier plate on the polishing pad is deviated, or the carrier plate is also deviated on the polishing pad due to the autorotation generated by the inner pin ring and the outer pin ring, in conclusion, the water column sprayed by the cleaning nozzle is sprayed on the carrier plate due to the deviation of the position of the carrier plate on the polishing pad, and a circle of annular glazed layer appears in the polishing pad area blocked by the carrier plate, so that the product processed later is scratched and bad.
Disclosure of Invention
The embodiment of the invention provides a polishing pad cleaning device and a polishing pad cleaning method, which are used for solving the problem of poor cleaning effect caused by high-purity water blocked by a bearing disc when a polishing pad is cleaned in the prior art.
In order to solve the technical problems, the embodiment of the invention provides the following technical scheme:
in a first aspect, an embodiment of the present invention provides a polishing pad cleaning device, which is applied to a double-sided polishing apparatus, where the double-sided polishing apparatus includes an upper surface plate and a lower surface plate that are disposed opposite to each other, an upper polishing pad is disposed on a side of the upper surface plate facing the lower surface plate, a lower polishing pad is disposed on a side of the lower surface plate facing the upper surface plate, and a plurality of silicon wafer carrier plates are disposed on the lower polishing pad, and the polishing pad cleaning device includes:
a fixed bracket arranged at one side of the lower polishing pad;
a cleaning nozzle connected to the fixed support through a connection arm, the cleaning nozzle being rotatable about the fixed support, the cleaning nozzle being configured to spray a cleaning liquid toward the upper polishing pad and the lower polishing pad when the cleaning nozzle is rotated between the upper polishing pad and the lower polishing pad;
the detection assembly is fixedly connected with the cleaning nozzle and comprises an emission assembly and a receiving assembly, the emission assembly is used for emitting detection signals to the lower polishing pad, and the receiving assembly is used for receiving the detection signals reflected by the lower polishing pad or the silicon wafer carrier plate;
and the processor is used for acquiring the reflection result of the detection signal and determining whether the detection signal is reflected by the lower polishing pad or the silicon wafer carrier according to the reflection result.
In some embodiments, the connecting arm is connected to a side of the cleaning nozzle;
the detection assemblies are arranged on the side face of the cleaning nozzle, and the number of the detection assemblies is two;
the first detection component of the two detection components is arranged at the position farthest from the connecting arm on the side surface of the cleaning nozzle, and the second detection component of the two detection components is arranged between the connecting arm and the first detection component.
In some embodiments, the distance between the second detection component and the connecting arm is equal to the distance between the second detection component and the first detection component.
In some embodiments, the first detection assembly and the second detection assembly are located at the same level.
In some embodiments, the transmitting assembly comprises at least one of:
a radar signal transmitter;
an ultrasonic signal emitter;
a laser signal emitter;
the receiving assembly includes at least one of:
a radar signal receiver;
an ultrasonic signal receiver;
a laser signal receiver.
In a second aspect, embodiments of the present invention also provide a double-sided polishing apparatus including a polishing pad cleaning device according to any one of the first aspects.
In a third aspect, an embodiment of the present invention further provides a polishing pad cleaning method applied to the polishing pad cleaning device according to any one of the first aspect, the method including:
transmitting a detection signal to the lower polishing pad through a transmitting assembly while the cleaning nozzle is rotated between the upper polishing pad and the lower polishing pad, and receiving the detection signal reflected through the lower polishing pad or the silicon wafer carrier by a receiving assembly;
obtaining a reflection result of the detection signal;
controlling the cleaning nozzle to stop or start spraying cleaning liquid according to the reflection result;
the reflection result is used for indicating whether the detection signal is reflected by the lower polishing pad or the silicon wafer carrier.
In some embodiments, the reflection result includes a time difference between the transmission of the detection signal by the transmission component and the reception of the detection signal by the reception component, and a phase difference between the transmission of the detection signal by the transmission component and the reception of the detection signal by the reception component;
controlling the cleaning nozzle to stop or start spraying cleaning liquid according to the reflection result, including:
determining a target distance between the transmitting assembly and a signal reflection point according to the time difference and the phase difference;
determining the thickness of the silicon wafer carrier according to the target distance;
determining that the detection signal is reflected by the lower polishing pad when the target distance is a first distance, and determining that the detection signal is reflected by the silicon wafer carrier when the target distance is a second distance, wherein the first distance is greater than the second distance;
and controlling the cleaning nozzle to spray the cleaning liquid under the condition that the detection signal is reflected by the lower polishing pad, and controlling the cleaning nozzle to stop spraying the cleaning liquid under the condition that the detection signal is reflected by the silicon wafer carrier.
In some embodiments, the reflection result includes a signal strength of the detection signal;
controlling the cleaning nozzle to stop or start spraying cleaning liquid according to the reflection result, including:
determining whether the detection signal is reflected by the lower polishing pad or the silicon wafer carrier according to the signal intensity of the detection signal;
and controlling the cleaning nozzle to spray the cleaning liquid under the condition that the detection signal is reflected by the lower polishing pad, and controlling the cleaning nozzle to stop spraying the cleaning liquid under the condition that the detection signal is reflected by the silicon wafer carrier.
In some embodiments, the method further comprises:
and generating warning information under the condition that the detection signal is reflected by the silicon wafer carrier.
The embodiment of the invention has the following beneficial effects:
according to the polishing pad cleaning device provided by the embodiment of the invention, the emission component in the detection component emits the detection signal to the lower polishing pad, the detection signal reflected by the lower polishing pad or the silicon wafer carrier disc is received by the receiving component, the detection signal is reflected by the lower polishing pad or the silicon wafer carrier disc according to the reflection result of the detection signal, if the detection signal is emitted by the lower polishing pad, the transmission path of the detection signal is not transmitted by the silicon wafer carrier disc, at the moment, the cleaning nozzle is controlled to rotate between the upper polishing pad and the lower polishing pad, and the cleaning liquid (such as high-purity water) is sprayed to the upper polishing pad and the lower polishing pad, so that the cleaning liquid is prevented from being blocked by the silicon wafer carrier disc, the cleaning effect is ensured, and if the detection signal is determined to be reflected by the silicon wafer carrier disc according to the detection result, the transmission path of the detection signal is indicated to pass through the silicon wafer carrier disc, and the cleaning nozzle is controlled to stop spraying the cleaning liquid to the silicon wafer carrier disc to cause glazing layer.
Drawings
FIG. 1 is a schematic view showing a structure of a polishing pad cleaning apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic diagram showing a second embodiment of a polishing pad cleaning apparatus according to the present invention;
fig. 3 is a flowchart of a method for cleaning a polishing pad according to an embodiment of the present invention.
Reference numerals:
1: an upper fixed disc; 2: a lower fixed disc; 3: a top polishing pad; 4: a lower polishing pad; 5: a silicon wafer carrying disc; 51: an accommodation hole; 6: a connecting arm; 7: cleaning the nozzle; 8, a first movement track; 9: a first detection assembly; 10: a second detection assembly; 11: a second action track; 301-303: and (3) step (c).
Detailed Description
In order to make the technical problems, technical solutions and advantages to be solved by the embodiments of the present invention more apparent, the following detailed description will be given with reference to the accompanying drawings and the specific embodiments.
In order to make the objects, technical solutions and advantages of the embodiments of the present invention more clear, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. It will be apparent that the described embodiments are some, but not all, embodiments of the invention. All other embodiments, which are obtained by a person skilled in the art based on the described embodiments of the invention, fall within the scope of protection of the invention.
In order to solve the problem of poor cleaning effect caused by high-purity water blocked by a bearing disc when a polishing pad is cleaned in the prior art, the embodiment of the invention provides a polishing pad cleaning device and a polishing pad cleaning method.
As shown in fig. 1 and 2, an embodiment of the present invention provides a polishing pad cleaning device, which is applied to a double-sided polishing apparatus, where the double-sided polishing apparatus includes an upper fixed disk 1 and a lower fixed disk 2 that are disposed opposite to each other, an upper polishing pad 3 is disposed on a side of the upper fixed disk 1 facing the lower fixed disk 2, a lower polishing pad 4 is disposed on a side of the lower fixed disk 2 facing the upper fixed disk 1, and a plurality of silicon wafer carriers 5 are disposed on the lower polishing pad 4.
The polishing pad cleaning device includes:
a fixed bracket arranged at one side of the lower polishing pad 4;
a cleaning nozzle 7 connected to the fixed support through a connecting arm 6, the cleaning nozzle 7 being rotatable around the fixed support, the cleaning nozzle 7 being configured to spray a cleaning liquid toward the upper polishing pad 3 and the lower polishing pad 4 when the cleaning nozzle 7 is rotated between the upper polishing pad 3 and the lower polishing pad 4;
the detection assembly is fixedly connected with the cleaning nozzle 7 and comprises an emission assembly and a receiving assembly, wherein the emission assembly is used for emitting detection signals to the lower polishing pad 4, and the receiving assembly is used for receiving the detection signals reflected by the lower polishing pad 4 or the silicon wafer carrier 5;
and the processor is used for acquiring the reflection result of the detection signal and determining whether the detection signal is reflected by the lower polishing pad 4 or the silicon wafer carrier 5 according to the reflection result.
It should be noted that, since the lower polishing pad 4 is provided with the plurality of silicon wafer carriers 5, and a gap exists between every two adjacent silicon wafer carriers 5, the polishing pad cleaning device provided by the embodiment of the invention has the effects that the connecting arm 6 drives the cleaning nozzle 7 to rotate in the gap between the adjacent silicon wafer carriers 5, and sprays the cleaning liquid to the gap. In this state, as shown in fig. 1, the first movement locus 8 of the cleaning nozzle 7 is shown in fig. 2.
Illustratively, the cleaning fluid is ultrapure water. It should be noted that other liquids having a cleaning effect than ultrapure water may be used as the cleaning liquid provided in the embodiment of the present invention, and the embodiment of the present invention is not limited thereto.
Because the materials of the lower polishing pad 4 and the silicon wafer carrier 5 are different, after the detection signal is reflected by the lower polishing pad 4 and the silicon wafer carrier 5, the reflection intensity of the detection signal received by the receiving component is different, and by utilizing the characteristic, whether the detection signal is reflected by the lower polishing pad 4 or the silicon wafer carrier 5 can be determined. Alternatively, since the heights of the lower polishing pad 4 and the silicon wafer carrier 5 are different in the vertical direction, the reflection result indicates that the transmission distance of the detection signal is different after the detection signal is reflected by the lower polishing pad 4 and the silicon wafer carrier 5, and depending on this characteristic, it is also possible to determine whether the detection signal is reflected by the lower polishing pad 4 or by the silicon wafer carrier 5.
In addition, since the accommodating hole 51 for accommodating the silicon wafer is formed in the silicon wafer carrier 5, the accommodating hole 51 is a through hole, in order to avoid the situation that the detection signal is reflected by the lower polishing pad 4 corresponding to the accommodating hole 51 as a result of reflection, preferably, during detection, the cleaning nozzle 7 is controlled to drive the detection component to gradually rotate from the edge of the lower polishing pad 4 to the center of the lower polishing pad 4, after the cleaning nozzle 7 rotates between the upper polishing pad 3 and the lower polishing pad 4, the emission component emits the detection signal to the direction of the lower polishing pad 4 in real time, the receiving component receives the detection signal in real time, if the detection signal is reflected by the lower polishing pad 4 as a result of reflection of the detection signal, the cleaning nozzle 7 is controlled to spray the cleaning liquid to the upper polishing pad 3 and the lower polishing pad 4, and if the detection signal is reflected by the silicon wafer carrier 5 as a result of reflection of the detection signal is indicated, the cleaning nozzle 7 is controlled to stop spraying the cleaning liquid to the upper polishing pad 3 and the lower polishing pad 4.
If the cleaning liquid is sprayed onto the silicon wafer carrier 5, the polishing liquid residue on the portion of the lower polishing pad 4 covered by the silicon wafer carrier 5 cannot be cleaned, and a ring-shaped polishing liquid glazing layer is formed on the portion of the lower polishing pad, so that a scratch or ring-shaped Pattern (Pattern) is formed on a product to be processed later, and a large number of product defects occur. Therefore, the polishing pad cleaning device provided by the embodiment of the invention can reduce the problems of annular glazing and bad products caused by the fact that the polishing pad is not cleaned in place.
As an alternative embodiment, the detection assembly is arranged on the side of the cleaning nozzle 7;
the number of the detection assemblies is at least two, and the at least two detection assemblies are uniformly distributed along the circumferential direction of the cleaning nozzle 7.
In order to ensure the detection effect of the detection signals, at least two detection components are uniformly distributed in the circumferential direction of the cleaning nozzle 7, the detection signals are emitted to the lower polishing pad 4 through the emission component in each detection component, the corresponding receiving components receive the detection signals, and under the condition that the reflection results of the detection signals corresponding to each detection component indicate that the detection signals are reflected by the lower polishing pad 4, the cleaning nozzle 7 is controlled to spray cleaning liquid to the upper polishing pad 3 and the lower polishing pad 4, so that the detection accuracy can be increased.
As a further alternative embodiment, the connecting arm 6 is connected to the side of the cleaning nozzle 7;
the detection components are arranged on the side face of the cleaning nozzle 7, the number of the detection components is two, the first detection components 9 in the two detection components are arranged on the side face of the cleaning nozzle 7 at the position farthest from the connecting arm 6, and the second detection components 10 in the two detection components are arranged between the connecting arm 6 and the first detection components 9.
In this alternative embodiment, the first detecting component 9 is disposed furthest from the connecting arm 6, the reflection result corresponding to the detecting signal emitted by the first detecting component 9 can determine whether the silicon wafer carrier 5 is covered at the position furthest from the connecting arm 6 on the cleaning nozzle 7, the second detecting component 10 is disposed between the connecting arm 6 and the first detecting component 9, the reflection result corresponding to the detecting signal emitted by the second detecting component can determine whether the silicon wafer carrier 5 is covered at the position between the connecting arm 6 and the first detecting component 9 on the cleaning nozzle 7, and if the reflection results corresponding to the detecting signal emitted by the first detecting component 9 and the detecting signal emitted by the second detecting component 10 are both indicative that the detecting signal is reflected by the lower polishing pad 4, the cleaning nozzle 7 is controlled to spray the cleaning liquid onto the polishing pad 3 and the lower polishing pad 4, so that the accuracy of detection can be increased.
In addition, in this alternative embodiment, if the transmission distance of the detection signal is different based on the characteristic that the reflection result indicates that the transmission distance of the detection signal is different after the detection signal is reflected by the lower polishing pad 4 and the silicon wafer carrier 5, if the detection result corresponding to the detection signal emitted by the first detection component 9 indicates that the continuously emitted detection signal is reflected by the lower polishing pad 4, then reflected by the silicon wafer carrier 5, and then reflected by the lower polishing pad 4, the second action track 11 of the signal is as shown in fig. 2, and the indication detection signal in the reflection result corresponding to the continuously detected signal emitted by the second detection component 10 is reflected by the lower polishing pad 4, then the thickness of the silicon wafer carrier 5 can be determined according to the reflection result of the detection signal emitted by the first detection component 9 and the second detection component 10. Therefore, the thickness of the silicon wafer carrier 5 can be detected in the alternative embodiment, and the situation that the thickness of the silicon wafer does not reach the standard due to the fact that the silicon wafer carrier is too thin is reduced.
The distance between the second detecting element 10 and the connecting arm 6 and the distance between the second detecting element 10 and the first detecting element 9 are equal, that is, the second detecting element 10 is disposed between the connecting arm 6 and the first detecting element 9, and then the movement track of the second detecting element 10 is shown as the first movement track 8.
The first detecting assembly 9 and the second detecting assembly 10 are located at the same level. In the case of detecting the thickness of the silicon wafer carrier 5 based on the above principle, or based on the characteristic that the transmission distance of the detection signal is different as indicated by the reflection result after the detection signal is reflected by the lower polishing pad 4 and the silicon wafer carrier 5, and determining whether the detection signal is reflected by the lower polishing pad 4 or the silicon wafer carrier 5, the first detection assembly 9 and the second detection assembly 10 are disposed at the same height, it is possible to determine more simply and quickly whether the thickness of the silicon wafer carrier 5 or the detection signal is reflected by the lower polishing pad 4 or the silicon wafer carrier 5.
In some embodiments, the transmitting assembly comprises at least one of:
a radar signal transmitter;
an ultrasonic signal emitter;
a laser signal emitter;
the receiving assembly includes at least one of:
a radar signal receiver;
an ultrasonic signal receiver;
a laser signal receiver.
It should be noted that, the types of the transmitting component and the receiving component belonging to the same detecting component need to be identical, and according to the requirement, the types of the transmitting component and the receiving component between different detecting components may be different, which is not limited in this embodiment.
The embodiment of the invention also provides double-sided polishing equipment, which comprises the polishing pad cleaning device.
It should be noted that, if the double-sided polishing apparatus provided by the embodiment of the present invention includes the polishing pad cleaning device as described in any one of the above, all embodiments of the polishing pad cleaning device described above are applicable to the double-sided polishing apparatus, and the same or similar technical effects can be achieved.
As shown in fig. 3, an embodiment of the present invention further provides a polishing pad cleaning method, which is applied to the polishing pad cleaning device described in any one of the above, the method including:
step 301: and transmitting a detection signal to the lower polishing pad through a transmitting assembly when the cleaning nozzle rotates between the upper polishing pad and the lower polishing pad, and receiving the detection signal reflected by the lower polishing pad or the silicon wafer carrier through a receiving assembly.
Preferably, in the step, a detection signal is emitted from the edge of the lower polishing pad to the center of the lower polishing pad through the emitting assembly while the cleaning nozzle is rotated between the upper polishing pad and the lower polishing pad, and the detection signal is continuously emitted and continuously received as the cleaning nozzle is rotated.
Step 302: and obtaining a reflection result of the detection signal.
Wherein the reflection result includes the reflection intensity of the detection signal, or the reflection result includes the transmission distance of the detection signal.
Step 303: controlling the cleaning nozzle to stop or start spraying cleaning liquid according to the reflection result;
the reflection result is used for indicating whether the detection signal is reflected by the lower polishing pad or the silicon wafer carrier.
It should be noted that, because the materials of the lower polishing pad 4 and the silicon wafer carrier 5 are different, the reflection intensity of the detection signal received by the receiving component is different after the detection signal is reflected by the lower polishing pad 4 and the silicon wafer carrier 5, and according to the reflection result, whether the detection signal is reflected by the lower polishing pad or the silicon wafer carrier can be determined. Alternatively, since the heights of the lower polishing pad 4 and the silicon wafer carrier 5 are different in the vertical direction, the reflection result indicates that the transmission distance of the detection signal is different after the detection signal is reflected by the lower polishing pad 4 and the silicon wafer carrier 5, and it can be determined whether the detection signal is reflected by the lower polishing pad or the silicon wafer carrier according to the reflection result.
As an alternative embodiment, the reflection result includes a time difference between the transmission of the detection signal by the transmitting component and the reception of the detection signal by the receiving component, and a phase difference between the transmission of the detection signal by the transmitting component and the reception of the detection signal by the receiving component;
controlling the cleaning nozzle to stop or start spraying cleaning liquid according to the reflection result, including:
determining a target distance between the transmitting component and the signal reflection point according to the time difference and the phase difference, specifically, the transmission speeds of different detection signals are different, and calculating the target distance between the transmitting component and the signal reflection point according to the transmission speeds, the time difference and the phase difference of the detection signals;
determining that the detection signal is reflected by the lower polishing pad when the target distance is a first distance, determining that the detection signal is reflected by the silicon wafer carrier when the target distance is a second distance, wherein the first distance is larger than the second distance, the first distance and the second distance can be calibrated in advance, the first distance can be understood as the distance between the transmitting component and the lower polishing pad, the second distance can be understood as the distance between the transmitting component and the lower polishing pad, or the transmitting component can continuously transmit the detection signal from the edge of the lower polishing pad to the center of the lower polishing pad, determining that the target distance starts to be the first distance according to the reflection result of the detection signal, if the first distance is kept, the detection signal always reflects by the lower polishing pad, if the target distance starts to be the first distance according to the reflection result of the detection signal, and then the target distance is reduced to be the second distance, the detection signal starts to reflect by the lower polishing pad, and then the silicon wafer carrier reflects;
and under the condition that the detection signal is reflected by the lower polishing pad, controlling the cleaning nozzle to spray the cleaning liquid, and under the condition that the detection signal is reflected by the silicon wafer carrier, controlling the cleaning nozzle to stop spraying the cleaning liquid, so that the cleaning liquid is sprayed on the lower polishing pad, and the problems of annular glazing and bad products caused by the fact that the polishing pad is not cleaned in place can be reduced.
Further, the method further comprises:
and determining the thickness of the silicon wafer carrier according to the target distance.
Specifically, the emission component is controlled to continuously emit detection signals from the edge of the lower polishing pad to the center of the lower polishing pad, if the target distance is determined to be a first distance according to the reflection result of the detection signals, and then the target distance is reduced to a second distance, the detection signals are reflected by the lower polishing pad, then reflected by the silicon wafer carrier disc, the thickness of the silicon wafer carrier disc can be determined according to the change condition of the target distance, and reminding is carried out under the condition that the thickness of the silicon wafer carrier disc is too thin, so that the condition that the thickness of the silicon wafer is not up to standard due to the fact that the thickness of the silicon wafer carrier disc is too thin is reduced.
As another alternative embodiment, the reflection result includes a signal strength of the detection signal;
controlling the cleaning nozzle to stop or start spraying cleaning liquid according to the reflection result, including:
according to the signal intensity of the detection signal, whether the detection signal is reflected by the polishing pad or the silicon wafer carrier is determined, the cleaning nozzle is controlled to spray the cleaning liquid under the condition that the detection signal is reflected by the polishing pad, and the cleaning nozzle is controlled to stop spraying the cleaning liquid under the condition that the detection signal is reflected by the silicon wafer carrier, so that the cleaning liquid is sprayed on the lower polishing pad, and the problems of annular glazing and bad products caused by the fact that the polishing pad is not cleaned in place can be reduced.
In some embodiments, the method further comprises:
and under the condition that the detection signal is reflected by the silicon wafer carrier, generating warning information, wherein the warning information is used for reminding a worker, and the position of the silicon wafer carrier on the lower polishing pad is incorrect, so that the worker can determine whether adjustment is needed.
It should be noted that, the polishing pad cleaning method provided in the embodiment of the present invention is a method applied to any one of the polishing pad cleaning devices described above, and all embodiments of the polishing pad cleaning device described above are applicable to the method, and the same or similar technical effects can be achieved.
While the foregoing is directed to the preferred embodiments of the present invention, it will be appreciated by those skilled in the art that various modifications and adaptations can be made without departing from the principles of the present invention, and such modifications and adaptations are intended to be comprehended within the scope of the present invention.
Claims (10)
1. The utility model provides a polishing pad belt cleaning device, is applied to two-sided polishing equipment, two-sided polishing equipment includes the upper fixed disk and the lower fixed disk of relative setting, upper fixed disk orientation one side of lower fixed disk is provided with the polishing pad, lower fixed disk orientation one side of upper fixed disk is provided with the polishing pad down, set up a plurality of silicon chip carrier plates on the polishing pad down, its characterized in that, polishing pad belt cleaning device includes:
a fixed bracket arranged at one side of the lower polishing pad;
a cleaning nozzle connected to the fixed support through a connection arm, the cleaning nozzle being rotatable about the fixed support, the cleaning nozzle being configured to spray a cleaning liquid toward the upper polishing pad and the lower polishing pad when the cleaning nozzle is rotated between the upper polishing pad and the lower polishing pad;
the detection assembly is fixedly connected with the cleaning nozzle and comprises an emission assembly and a receiving assembly, the emission assembly is used for emitting detection signals to the lower polishing pad, and the receiving assembly is used for receiving the detection signals reflected by the lower polishing pad or the silicon wafer carrier plate;
and the processor is used for acquiring the reflection result of the detection signal and determining whether the detection signal is reflected by the lower polishing pad or the silicon wafer carrier according to the reflection result.
2. The polishing pad cleaning apparatus according to claim 1, wherein the connecting arm is connected to a side surface of the cleaning nozzle;
the detection assemblies are arranged on the side face of the cleaning nozzle, and the number of the detection assemblies is two;
the first detection component of the two detection components is arranged at the position farthest from the connecting arm on the side surface of the cleaning nozzle, and the second detection component of the two detection components is arranged between the connecting arm and the first detection component.
3. The polishing pad cleaning apparatus according to claim 2, wherein a distance between the second detecting member and the connecting arm and a distance between the second detecting member and the first detecting member are equal.
4. The polishing pad cleaning apparatus according to claim 2, wherein the first detection assembly and the second detection assembly are located at the same level.
5. The polishing pad cleaning apparatus according to claim 1, wherein the emission assembly comprises at least one of:
a radar signal transmitter;
an ultrasonic signal emitter;
a laser signal emitter;
the receiving assembly includes at least one of:
a radar signal receiver;
an ultrasonic signal receiver;
a laser signal receiver.
6. A double-sided polishing apparatus comprising the polishing pad cleaning device according to any one of claims 1 to 5.
7. A polishing pad cleaning method applied to the polishing pad cleaning apparatus according to any one of claims 1 to 5, the method comprising:
transmitting a detection signal to the lower polishing pad through a transmitting assembly while the cleaning nozzle is rotated between the upper polishing pad and the lower polishing pad, and receiving the detection signal reflected through the lower polishing pad or the silicon wafer carrier by a receiving assembly;
obtaining a reflection result of the detection signal;
controlling the cleaning nozzle to stop or start spraying cleaning liquid according to the reflection result;
the reflection result is used for indicating whether the detection signal is reflected by the lower polishing pad or the silicon wafer carrier.
8. The method of claim 7, wherein the reflection result comprises a time difference between transmission of the detection signal by a transmitting component and reception of the detection signal by the receiving component and a phase difference between transmission of the detection signal by the transmitting component and reception of the detection signal by the receiving component;
controlling the cleaning nozzle to stop or start spraying cleaning liquid according to the reflection result, including:
determining a target distance between the transmitting assembly and a signal reflection point according to the time difference and the phase difference;
determining the thickness of the silicon wafer carrier according to the target distance;
determining that the detection signal is reflected by the lower polishing pad when the target distance is a first distance, and determining that the detection signal is reflected by the silicon wafer carrier when the target distance is a second distance, wherein the first distance is greater than the second distance;
and controlling the cleaning nozzle to spray the cleaning liquid under the condition that the detection signal is reflected by the lower polishing pad, and controlling the cleaning nozzle to stop spraying the cleaning liquid under the condition that the detection signal is reflected by the silicon wafer carrier.
9. The method of claim 7, wherein the reflection result comprises a signal strength of the detection signal;
controlling the cleaning nozzle to stop or start spraying cleaning liquid according to the reflection result, including:
determining whether the detection signal is reflected by the lower polishing pad or the silicon wafer carrier according to the signal intensity of the detection signal;
and controlling the cleaning nozzle to spray the cleaning liquid under the condition that the detection signal is reflected by the lower polishing pad, and controlling the cleaning nozzle to stop spraying the cleaning liquid under the condition that the detection signal is reflected by the silicon wafer carrier.
10. The method of claim 7, wherein the method further comprises:
and generating warning information under the condition that the detection signal is reflected by the silicon wafer carrier.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311749491.5A CN117718888A (en) | 2023-12-19 | 2023-12-19 | Polishing pad cleaning device and polishing pad cleaning method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311749491.5A CN117718888A (en) | 2023-12-19 | 2023-12-19 | Polishing pad cleaning device and polishing pad cleaning method |
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| Publication Number | Publication Date |
|---|---|
| CN117718888A true CN117718888A (en) | 2024-03-19 |
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|---|---|---|---|
| CN202311749491.5A Pending CN117718888A (en) | 2023-12-19 | 2023-12-19 | Polishing pad cleaning device and polishing pad cleaning method |
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| Country | Link |
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| CN (1) | CN117718888A (en) |
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