CN117637470A - Etching method of double-layer metal of silicon carbide device - Google Patents
Etching method of double-layer metal of silicon carbide device Download PDFInfo
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- CN117637470A CN117637470A CN202311623560.8A CN202311623560A CN117637470A CN 117637470 A CN117637470 A CN 117637470A CN 202311623560 A CN202311623560 A CN 202311623560A CN 117637470 A CN117637470 A CN 117637470A
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 86
- 239000002184 metal Substances 0.000 title claims abstract description 86
- 238000005530 etching Methods 0.000 title claims abstract description 42
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 31
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 31
- 238000000034 method Methods 0.000 title claims abstract description 28
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 30
- 230000004888 barrier function Effects 0.000 claims abstract description 22
- 238000001312 dry etching Methods 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000001039 wet etching Methods 0.000 claims abstract description 11
- 238000000151 deposition Methods 0.000 claims abstract description 5
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims abstract description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 4
- 238000004528 spin coating Methods 0.000 claims abstract description 4
- 238000005260 corrosion Methods 0.000 claims description 10
- 230000007797 corrosion Effects 0.000 claims description 10
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 150000002739 metals Chemical class 0.000 claims description 5
- 238000005240 physical vapour deposition Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 4
- 239000011259 mixed solution Substances 0.000 claims description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 238000009616 inductively coupled plasma Methods 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 claims description 2
- 238000001636 atomic emission spectroscopy Methods 0.000 claims description 2
- 238000003486 chemical etching Methods 0.000 claims description 2
- 238000001035 drying Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 3
- 230000002411 adverse Effects 0.000 abstract description 2
- 238000004377 microelectronic Methods 0.000 abstract description 2
- 239000000047 product Substances 0.000 description 11
- 239000006227 byproduct Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910004349 Ti-Al Inorganic materials 0.000 description 1
- 229910004692 Ti—Al Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000012864 cross contamination Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- Drying Of Semiconductors (AREA)
Abstract
The invention relates to a method for etching double-layer metal of a silicon carbide device, and belongs to the technical field of microelectronic manufacturing. The method comprises the following steps: s1: depositing a bilayer of the desired metal on a silicon carbide substrate; s2: spin coating photoresist on the metal layer to prepare a photoresist barrier layer; s3: wet etching is carried out on the upper metal to form an upper metal groove; s4: removing the photoresist barrier layer by pure oxygen plasma dry method; s5: growing an oxide layer by adopting a plasma chemical vapor deposition mode; s6: performing overlay with the same pattern in the step S2 to form a new photoresist barrier layer; s7: carrying out dry etching on the lower metal layer; s8: and removing the surface photoresist barrier layer. The method is simple and easy to operate, ensures stable metal etching precision and reduces line width loss on the premise of reducing production cost, does not further amplify adverse effects caused by wet etching, can also improve the interface quality of a metal layer and a substrate, obtains good etching morphology and reduces electric leakage, thereby improving the electrical property of the device.
Description
Technical Field
The invention relates to a method for etching double-layer metal of a silicon carbide device, and belongs to the technical field of microelectronic manufacturing.
Background
Silicon carbide materials become the third generation semiconductor materials with the most development activity and prospect at present due to the excellent physical and chemical properties such as high thermal conductivity, high breakdown voltage, high temperature resistance and the like. Compared with the traditional silicon-based substrate, the silicon carbide material has obvious advantages in the fields of high power, high frequency and high temperature, and has huge market space. With the current vigorous rise of the field of new energy automobiles, silicon carbide replaces silicon base to form a mainstream development direction in the aspects of inverter modules and high-power charging equipment.
The formation and corrosion of metal films plays a critical role in device performance from the aspect of silicon carbide devices. At present, there are two main methods for corroding metal films: one is wet etching by proportioning solutions of certain composition and concentration, and the other is dry etching of metals by plasma. The former has low production cost, but the accuracy is difficult to control due to isotropy of solvent corrosion, and metal residues at interfaces after corrosion affect device performance. The latter has high etching precision, ensures clean interface, but has higher cost, and has the problems of cross contamination, machine maintenance, low service life and the like when etching various metals.
In silicon carbide semiconductor device applications, metal selection has been currently advanced from the use of only one metal to multi-metal or alloy studies, such as the use of multi-layer metal structures to improve the non-uniformity of the schottky barrier or multi-layer metals to improve the adhesion of the ohmic contact. Thus, the quality of bilayer or even multilayer metal corrosion has a significant impact on the final device product performance. For this purpose, the present invention is proposed.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides the double-layer metal etching method for the silicon carbide device, which is simple and easy to operate, ensures that the metal etching precision is stable and the line width loss is reduced on the premise of reducing the production cost, does not further amplify the adverse effect caused by wet etching, can also improve the interface quality of a metal layer and a substrate, obtains good etching morphology and reduces electric leakage, thereby improving the electrical property of the device.
The technical scheme of the invention is as follows:
the double-layer metal etching process of silicon carbide device includes the following steps:
s1: physical vapor deposition of bilayer desired metals on silicon carbide substrates;
s2: observing after deposition, spin-coating photoresist on the metal layer, exposing, developing and hard drying to form a photoresist barrier layer;
s3: preparing an upper metal corrosion mixed solution, and carrying out wet etching on the upper metal to form an upper metal groove;
s4: removing the photoresist barrier layer by pure oxygen plasma dry method;
s5: growing an oxide layer by adopting a plasma chemical vapor deposition mode;
s6: step S4, photoresist is removed completely, after the oxide layer in step S5 is grown, the same graph as that in step S2 is used for alignment, and a new photoresist barrier layer is formed again;
s7: carrying out dry etching on the lower metal by adopting an inductively coupled plasma etching machine;
s8: and after the etching is monitored by an optical emission spectrometry, removing the surface photoresist barrier layer.
In the step S1, the upper metal in the double-layer metal is Al, and the lower metal is Ti; or the upper metal is Ni, and the lower metal is Ti; or the upper metal is Ni, and the lower metal is W.
According to the invention, the photoresist barrier layer in the step S2 and the step S6 have the same thickness, and the thicknesses are 1000 nm-3000 nm.
In a preferred embodiment of the present invention, in step S3, phosphoric acid in the metal etching mixture: acetic acid: nitric acid: water volume ratio = 4:4:1:1, the corrosion temperature was 40 ℃.
According to a preferred embodiment of the present invention, in step S7, the underlying metal is dry etched in the lithographically exposed regions until the substrate is exposed.
In step S7, the dry etching is specifically physical etching, chemical etching or physicochemical etching.
In step S7, the power of the upper electrode is 600-1000W and the power of the lower electrode is 60-200W.
According to the present invention, preferably, in step S7, the etching gas is HCl and Ar, or CHF3 and Ar, and the flow ratio of HCl and Ar is 3:1, SF6 and Ar flow ratio of 4:1, chf3 and Ar flow ratio of 3:1.
according to a preferred embodiment of the present invention, in step S8, the photoresist barrier layer is removed using oxygen plasma at a temperature ranging from 100 to 250 ℃.
According to the invention, the oxide layer is preferably a silicon oxide layer, and the thickness of the oxide layer is 50-500 nm.
The invention has the beneficial effects that:
the invention provides a double-layer metal etching method for preparing a silicon carbide device, which can reduce cost to a certain extent compared with all dry etching and ensure the neatness of the interface between a metal layer and a substrate compared with all wet etching, and reduce metal residues so as to improve the electrical property of the device. In the wet etching and dry etching combined etching, due to isotropy of wet etching, side etching can occur after the metal layer is corroded to form an inclined section, and the inclined section is easy to cause accumulation of byproducts in dry etching. Meanwhile, the invention is not only applicable to the silicon carbide substrate, but also can be expanded to other semiconductor materials and multilayer metal conditions on the basis of the silicon carbide substrate; the method is simple and easy to understand in theory, and can effectively improve the production efficiency of the silicon carbide device.
Drawings
Fig. 1 is a flow chart of the method of the present invention.
FIG. 2 is a schematic representation of the product of step S1 of the present invention.
FIG. 3 is a schematic representation of the product of step S2 of the present invention.
FIG. 4 is a schematic representation of the product of step S3 of the present invention.
FIG. 5 is a schematic representation of the product of step S4 of the present invention.
FIG. 6 is a schematic representation of the product of step S5 of the present invention.
FIG. 7 is a schematic representation of the product of step S6 of the present invention.
FIG. 8 is a schematic representation of the product of step S7 of the present invention.
FIG. 9 is a schematic representation of the product of step S8 of the present invention.
Fig. 10 is a schematic of the product of the comparative example, wherein Byproduct particles is a byproduct particle.
Wherein: 1. an upper layer metal; 2. a lower layer metal; 3. a silicon carbide substrate; 4. a photoresist barrier layer; 5. and a silicon oxide layer.
Detailed Description
The invention will now be further illustrated by way of example, but not by way of limitation, with reference to the accompanying drawings.
Example 1:
as shown in fig. 1-9, the embodiment provides a method for etching double-layer metal of a silicon carbide device, which comprises the following steps:
s1: performing PVD (Physical Vapor Deposition) physical vapor deposition on the silicon carbide substrate 3 to form a Ti-Al bimetallic layer, wherein the thickness of Ti is 40-100nm, and the thickness of Al is 2-5um;
s2: observing without error after deposition, spin-coating photoresist with the thickness of 1-3um on the metal layer, and exposing, developing and hard baking according to the design layout to form a photoresist barrier layer 4;
s3: preparing an upper metal corrosion mixed solution, wherein phosphoric acid is contained in the metal corrosion mixed solution: acetic acid: nitric acid: water volume ratio = 4:4:1: the upper metal 1 is subjected to wet etching at the constant temperature of 1 and 40 ℃ until the surface color of the wafer is completely changed to expose the lower metal 2, so that an upper metal groove is formed, the shape of the etched metal is in a slope shape due to the anisotropy of wet etching, and the line width loss of 1-5um is observed compared with that of dry etching;
s4: the pure oxygen plasma dry method removes the photoresist barrier layer 4, and the surface is clean and has no residue;
s5: growing a silicon oxide layer 5 by adopting a plasma chemical vapor deposition mode, wherein the thickness is 50-500nm;
TABLE 1 silica deposition parameter table
| Pressure (mT) | SiH 4 (sccm) | N 2 O(sccm) | N 2 (sccm) | Power (W) | Time (min) |
| 50--200 | 50--150 | 100--300 | 500--1500 | 50--300 | 4--10 |
S6: step S4, photoresist is removed completely, after the oxide layer in step S5 is grown, the same graph as that in step S2 is used for alignment, and a new photoresist barrier layer is formed again;
s7: carrying out dry etching on the exposed silicon oxide layer 5 and the lower metal layer 2 by adopting an inductively coupled plasma etching machine until the substrate is exposed, wherein etching gas is HCl and Ar, and the flow ratio of the HCl to the Ar is 3:1, adopting HCl and Ar mixed gas, generating volatile compounds by physical bombardment of Ar plasma and chemical reaction of Cl ions and metal ions, and pumping out in time along with a molecular pump;
table 2: HCl and Ar etching parameter table
| Pressure (mT) | HCl(sccm) | Ar(sccm) | Power supply (W) | Platform power (W) | Time(s) |
| 2--12 | 60--120 | 20--40 | 500--1500 | 50--300 | 15--50 |
The photoresist barrier layer is a first layer mask, the silicon oxide layer is a transition layer mask, and the dry etching firstly obtains the shape of the oxide layer with a relatively vertical inclination angle, so that the shape of the oxide layer is better transferred to the lower metal layer;
s8: removing the residual photoresist on the surface by adopting oxygen plasma after dry etching, wherein the temperature is 200 ℃; or only wet photoresist stripping is adopted, NMP is used as photoresist stripping liquid, and the temperature is 50 ℃.
Comparative example:
the comparative example provides an etching method of a double-layered metal without metal bevel protection, which is different from example 1 in that step S3 is followed by directly performing step S7 to dry etch the underlying metal, and the product is shown in fig. 10, which is a by-product generated on the metal bevel after dry etching.
The foregoing description is only of a preferred embodiment of the invention and is not intended to be limiting in form or in nature. It should be noted that it will be apparent to those skilled in the art that several modifications and additions can be made without departing from the basic principles of the invention, which are also considered to be within the scope of the invention as claimed.
Claims (10)
1. The etching method of the double-layer metal of the silicon carbide device is characterized by comprising the following steps of:
s1: physical vapor deposition of bilayer desired metals on silicon carbide substrates;
s2: observing after deposition, spin-coating photoresist on the metal layer, exposing, developing and hard drying to form a photoresist barrier layer;
s3: preparing an upper metal corrosion mixed solution, and carrying out wet etching on the upper metal to form an upper metal groove;
s4: removing the photoresist barrier layer by pure oxygen plasma dry method;
s5: growing an oxide layer by adopting a plasma chemical vapor deposition mode;
s6: step S4, photoresist is removed completely, after the oxide layer in step S5 is grown, the same graph as that in step S2 is used for alignment, and a new photoresist barrier layer is formed again;
s7: carrying out dry etching on the lower metal by adopting an inductively coupled plasma etching machine;
s8: and after the etching is monitored by an optical emission spectrometry, removing the surface photoresist barrier layer.
2. The method for etching a double-layer metal of a silicon carbide device according to claim 1, wherein in the step S1, the upper layer metal in the double-layer metal is Al, and the lower layer metal is Ti; or the upper metal is Ni, and the lower metal is Ti; or the upper metal is Ni, and the lower metal is W.
3. The method of etching a double-layer metal of a silicon carbide device according to claim 1, wherein the photoresist barrier layer in step S2 and step S6 have the same thickness, and each thickness is 1000 nm-3000 nm.
4. The method for etching a double-layer metal of a silicon carbide device according to claim 1, wherein in step S3, phosphoric acid in the metal etching mixture: acetic acid: nitric acid: water volume ratio = 4:4:1:1, the corrosion temperature was 40 ℃.
5. The method of etching a double-layer metal of a silicon carbide device according to claim 1, wherein in step S7, the underlying metal is dry etched in the lithographically exposed regions until the substrate is exposed.
6. The method of etching a silicon carbide device according to claim 1, wherein in step S7, the dry etching is physical etching, chemical etching or physicochemical etching.
7. The method of etching a double-layer metal of a silicon carbide device according to claim 1, wherein in step S7, the power of the upper electrode is 600-1000W and the power of the lower electrode is 60-200W.
8. The method of etching a double-layer metal of a silicon carbide device according to claim 1, wherein in step S7, the etching gas is HCl and Ar, or CHF3 and Ar, and the flow ratio of HCl and Ar is 3:1, SF6 and Ar flow ratio of 4:1, chf3 and Ar flow ratio of 3:1.
9. the method of etching a double-layer metal of a silicon carbide device according to claim 1, wherein in step S8, the resist barrier layer is removed by oxygen plasma at a temperature ranging from 100 to 250 ℃.
10. The method for etching a double-layer metal of a silicon carbide device according to claim 1, wherein the oxide layer is a silicon oxide layer, and the thickness of the oxide layer is 50-500 nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311623560.8A CN117637470A (en) | 2023-11-30 | 2023-11-30 | Etching method of double-layer metal of silicon carbide device |
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| CN202311623560.8A CN117637470A (en) | 2023-11-30 | 2023-11-30 | Etching method of double-layer metal of silicon carbide device |
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Citations (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0456254A (en) * | 1990-06-25 | 1992-02-24 | Matsushita Electron Corp | Manufacture of semiconductor device |
| US5132745A (en) * | 1990-10-05 | 1992-07-21 | General Electric Company | Thin film transistor having an improved gate structure and gate coverage by the gate dielectric |
| US5449639A (en) * | 1994-10-24 | 1995-09-12 | Taiwan Semiconductor Manufacturing Company Ltd. | Disposable metal anti-reflection coating process used together with metal dry/wet etch |
| JP2005236151A (en) * | 2004-02-23 | 2005-09-02 | Shindengen Electric Mfg Co Ltd | Manufacturing method of semiconductor device |
| CN101656210A (en) * | 2008-08-21 | 2010-02-24 | 索尼株式会社 | Semiconductor light-emitting element and convex part |
| CN106847690A (en) * | 2017-04-01 | 2017-06-13 | 深圳市华星光电技术有限公司 | A kind of engraving method of more metal layers |
| CN111415865A (en) * | 2020-04-08 | 2020-07-14 | Tcl华星光电技术有限公司 | Substrate metal structure etching method, TFT preparation method, TFT and display device |
| CN112701039A (en) * | 2020-12-28 | 2021-04-23 | 中国电子科技集团公司第五十五研究所 | Method for realizing metal electrode structure |
| CN113421825A (en) * | 2021-06-17 | 2021-09-21 | 北京航空航天大学杭州创新研究院 | Silicon wet etching method based on Cr/Cu double-layer metal mask |
| CN114203544A (en) * | 2021-10-31 | 2022-03-18 | 苏州焜原光电有限公司 | Etching method capable of reducing lateral corrosion degree of wafer |
| CN114792627A (en) * | 2021-01-25 | 2022-07-26 | 英飞凌科技奥地利有限公司 | Method for manufacturing semiconductor device using wet etching and dry etching, and semiconductor device |
| CN115064487A (en) * | 2022-07-01 | 2022-09-16 | Tcl华星光电技术有限公司 | Manufacturing method of array substrate, array substrate and display panel |
| WO2023035628A1 (en) * | 2021-09-09 | 2023-03-16 | 无锡华润上华科技有限公司 | Forming method for floating contact hole, and semiconductor device |
| TW202316523A (en) * | 2021-10-12 | 2023-04-16 | 聯華電子股份有限公司 | Hemt and method of fabricating the same |
| CN116666443A (en) * | 2023-04-10 | 2023-08-29 | 湖南三安半导体有限责任公司 | Gate structure, transistor device and preparation method thereof |
-
2023
- 2023-11-30 CN CN202311623560.8A patent/CN117637470A/en active Pending
Patent Citations (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0456254A (en) * | 1990-06-25 | 1992-02-24 | Matsushita Electron Corp | Manufacture of semiconductor device |
| US5132745A (en) * | 1990-10-05 | 1992-07-21 | General Electric Company | Thin film transistor having an improved gate structure and gate coverage by the gate dielectric |
| US5449639A (en) * | 1994-10-24 | 1995-09-12 | Taiwan Semiconductor Manufacturing Company Ltd. | Disposable metal anti-reflection coating process used together with metal dry/wet etch |
| JP2005236151A (en) * | 2004-02-23 | 2005-09-02 | Shindengen Electric Mfg Co Ltd | Manufacturing method of semiconductor device |
| CN101656210A (en) * | 2008-08-21 | 2010-02-24 | 索尼株式会社 | Semiconductor light-emitting element and convex part |
| CN106847690A (en) * | 2017-04-01 | 2017-06-13 | 深圳市华星光电技术有限公司 | A kind of engraving method of more metal layers |
| CN111415865A (en) * | 2020-04-08 | 2020-07-14 | Tcl华星光电技术有限公司 | Substrate metal structure etching method, TFT preparation method, TFT and display device |
| CN112701039A (en) * | 2020-12-28 | 2021-04-23 | 中国电子科技集团公司第五十五研究所 | Method for realizing metal electrode structure |
| CN114792627A (en) * | 2021-01-25 | 2022-07-26 | 英飞凌科技奥地利有限公司 | Method for manufacturing semiconductor device using wet etching and dry etching, and semiconductor device |
| CN113421825A (en) * | 2021-06-17 | 2021-09-21 | 北京航空航天大学杭州创新研究院 | Silicon wet etching method based on Cr/Cu double-layer metal mask |
| WO2023035628A1 (en) * | 2021-09-09 | 2023-03-16 | 无锡华润上华科技有限公司 | Forming method for floating contact hole, and semiconductor device |
| TW202316523A (en) * | 2021-10-12 | 2023-04-16 | 聯華電子股份有限公司 | Hemt and method of fabricating the same |
| CN114203544A (en) * | 2021-10-31 | 2022-03-18 | 苏州焜原光电有限公司 | Etching method capable of reducing lateral corrosion degree of wafer |
| CN115064487A (en) * | 2022-07-01 | 2022-09-16 | Tcl华星光电技术有限公司 | Manufacturing method of array substrate, array substrate and display panel |
| CN116666443A (en) * | 2023-04-10 | 2023-08-29 | 湖南三安半导体有限责任公司 | Gate structure, transistor device and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 方圆;: "双层金属布线中隔离介质淀积工艺研究", 微电子学, vol. 39, no. 02, 20 April 2009 (2009-04-20), pages 272 - 275 * |
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