CN112701039A - Method for realizing metal electrode structure - Google Patents
Method for realizing metal electrode structure Download PDFInfo
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- CN112701039A CN112701039A CN202011575601.7A CN202011575601A CN112701039A CN 112701039 A CN112701039 A CN 112701039A CN 202011575601 A CN202011575601 A CN 202011575601A CN 112701039 A CN112701039 A CN 112701039A
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 60
- 239000002184 metal Substances 0.000 title claims abstract description 60
- 238000000034 method Methods 0.000 title claims abstract description 38
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 47
- 238000005260 corrosion Methods 0.000 claims abstract description 34
- 230000007797 corrosion Effects 0.000 claims abstract description 34
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000010936 titanium Substances 0.000 claims abstract description 25
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 25
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 24
- 239000007788 liquid Substances 0.000 claims abstract description 22
- 238000005507 spraying Methods 0.000 claims abstract description 21
- 239000007921 spray Substances 0.000 claims abstract description 14
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 13
- 239000011248 coating agent Substances 0.000 claims abstract description 4
- 238000000576 coating method Methods 0.000 claims abstract description 4
- 238000001259 photo etching Methods 0.000 claims abstract description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 42
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 26
- 239000000243 solution Substances 0.000 claims description 20
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 18
- 239000008367 deionised water Substances 0.000 claims description 18
- 229910021641 deionized water Inorganic materials 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 11
- 238000005406 washing Methods 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 7
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 6
- 239000011259 mixed solution Substances 0.000 claims description 6
- 229910017604 nitric acid Inorganic materials 0.000 claims description 6
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 2
- 230000008569 process Effects 0.000 abstract description 20
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 abstract description 8
- 238000011109 contamination Methods 0.000 abstract description 6
- 239000000758 substrate Substances 0.000 abstract description 5
- 238000001312 dry etching Methods 0.000 abstract description 3
- 238000001465 metallisation Methods 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 33
- 238000001039 wet etching Methods 0.000 description 7
- 230000003749 cleanliness Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
Abstract
The invention discloses a method for realizing a metal electrode structure, which comprises the following steps: forming titanium-aluminum double-layer metal by a metallization method, wherein the titanium metal is arranged on the bottom layer and positioned on the surface of the substrate, and the aluminum metal is arranged on the top layer and positioned on the surface of the titanium metal; coating photoresist and photoetching a mask pattern; based on a single-chip wet spray corrosion system, using a specific corrosive liquid, controlling parameters such as the rotating speed, the spraying pressure, the spraying area, the spraying time and the like in the corrosion process, corroding aluminum metal and titanium metal layer by layer, then corroding the aluminum metal again to enable the side corrosion of the aluminum metal to continue to increase and expose the boundary of bottom titanium, and finally forming an electrode structure with the bottom titanium edge exceeding the top aluminum edge by at least 0.1 um; compared with the traditional groove type corrosion, better stability, uniformity and appearance are obtained; compared with the common multilayer metal corrosion result, the method avoids gaps caused by the side corrosion of the bottom metal, and eliminates the hidden trouble of reliability of the device; compared with dry etching, the method avoids the problems of cavity contamination, substrate damage, plasma damage and the like.
Description
Technical Field
The invention relates to the field of wet etching process in semiconductor device manufacturing, in particular to a method for realizing a metal electrode structure.
Background
On semiconductor devices, metallization processes are often used to deposit thin films of conductive metals on the chip for a variety of purposes. There are several main requirements to consider whether a metal material is qualified: conductivity, adhesion, deposition difficulty, planarization, reliability, corrosion resistance, and stress, all of which are well behaved by titanium and aluminum. Titanium metal is widely used in schottky contact, ohmic contact, barrier metal, metal interconnection, contact metal, alloy components and the like because of its characteristics of large work function, small contact resistance, good adhesion and the like. Aluminum metal is one of the most important materials in the semiconductor manufacturing industry at present due to its low resistivity, low cost and process compatibility, and is widely used in the fields of metal interconnection, electrode thickening, metal soldering, surface passivation, ohmic contact and the like. Titanium-aluminum double-layer metal is a common metal electrode structure as a barrier metal of a schottky diode, a thickened metal of the barrier metal, and a thickened metal of an MOSFET ohmic metal. Therefore, the patterning of the titanium-aluminum metal is a key technology with wide demand in the semiconductor process.
Wet etching is a widely used process in semiconductor device fabrication and plays an important role in metal or dielectric rinsing, residue removal, and large-scale pattern etching applications. Compared with dry etching, wet etching can have extremely high selection ratio for lower layer materials, does not bring plasma damage to devices, and has relatively simple basic conditions. The monolithic wet spray etching is an improved wet etching method with higher precision, and has several advantages over the conventional immersion etching, mainly the significant improvement of process uniformity and precision. The single-chip operation mode is characterized in that the equipment accurately controls the solution proportion, the temperature and the mechanical operation, and water is sprayed and washed in time after corrosion, so that the uniformity and controllability of the corrosion are guaranteed; the pollution degree from the corrosive liquid and the tank body is obviously reduced. Furthermore, spray erosion systems are often closed, increasing the safety of personnel operations.
In the established process, the titanium-aluminum metal lamination layer needs to be patterned layer by layer, and finally a structure with the edge of the bottom layer of titanium metal exceeding the edge of the top layer of aluminum metal by at least 0.1um is formed. The process requires good uniformity, controllability and cleanliness, and the uniformity in and among the chips is less than 5 percent; the corrosion of the width line of more than 20um can be realized; the metal edge is neat and has no undercutting; gaps caused by the fact that bottom layer metal is over-etched do not exist between layers, and therefore potential safety hazards of devices are introduced.
The conventional wet etching adopts a groove type soaking mode, the service life of a solution is often difficult to control along with the change of process conditions and the volatilization of a solvent, the process conditions cannot be solidified, the manual regulation is possibly extremely relied on, or the problems of incomplete corrosion, over corrosion and the like are easily caused, so that the product loss is caused; cleanliness of the tank-type equipment cannot be guaranteed, and contamination which is difficult to clean is easy to accumulate in the tank body or the pipeline for a long time and is attached to the surface of the wafer in the corrosion process, so that process abnormity is caused; on the other hand, due to the difference of solution exchange at different positions in the groove, the uniformity in the wafer, among the wafers and among batches is difficult to meet the requirement of 5%, corrosion in some thin lines even can not be realized, and the groove type corrosion mode is difficult to meet for the process with high stability requirement or high line precision requirement; the dry etching introduces the problems of cavity contamination, substrate damage, plasma damage and the like, and brings irreversible damage to the device. Therefore, the titanium-aluminum metal corrosion process with higher precision and good controllability is significant to be found.
Disclosure of Invention
The invention aims to provide a method for realizing a metal electrode structure, which can continuously corrode two layers of metal, simultaneously ensure better wet corrosion uniformity, controllability and cleanliness, present better metal side wall appearance and form a device structure with higher reliability.
In order to achieve the above object, the present invention provides a method for implementing a metal electrode structure, comprising the following steps:
step 1: coating photoresist on the surface of the metal electrode, and photoetching to form a mask;
step 2: transferring the photoetched wafer into a single-chip spray corrosion system, and sealing a cavity;
and step 3: spraying aluminum corrosive liquid to corrode aluminum metal;
and 4, step 4: washing the aluminum corrosive liquid remained on the surface of the wafer by using deionized water;
and 5: spraying diluted hydrofluoric acid to corrode titanium metal;
step 6: washing the diluted hydrofluoric acid remained on the surface of the wafer by using deionized water;
and 7: spraying aluminum corrosive liquid to corrode aluminum metal;
and 8: washing the aluminum corrosive liquid remained on the surface of the wafer by using deionized water;
and step 9: spin-drying and dehydrating the wafer;
step 10: opening the cavity and transferring the corroded wafer out;
step 11: and removing the photoresist on the surface of the wafer by using an organic solution.
Further, the metal electrode is composed of titanium metal and aluminum metal.
Furthermore, the titanium metal is arranged at the bottom layer, the thickness of the titanium metal is 50-500nm, and the aluminum metal is arranged at the top layer, and the thickness of the aluminum metal is 1-10 um.
Further, the finally obtained electrode structure is that the edge of the bottom layer titanium metal exceeds the edge of the top layer aluminum metal by at least 0.1 um.
Further, the photoresist is positive photoresist.
Further, the aluminum corrosive liquid is a mixed solution of phosphoric acid, nitric acid, acetic acid and deionized water, wherein the molar ratio of each component is as follows: nitric acid: acetic acid: water 1-60: 1-40: 1-30: 1-80.
The diluted hydrofluoric acid is a mixed solution of hydrofluoric acid and deionized water, wherein the molar ratio of each component is hydrofluoric acid: 1-30 parts of water: 170.
further, the liquid spraying time in the step 3 is 10-500 seconds, the liquid spraying time in the step 5 is 10-500 seconds, and the liquid spraying time in the step 7 is 1-300 seconds.
Further, the temperature of the aluminum corrosive liquid is controlled to be 40-90 ℃, and the temperature of the diluted hydrofluoric acid is controlled to be 10-50 ℃.
Further, the rotating speed of the wafer is 0-2500R/min.
Further, the nozzles for the solution, deionized water and nitrogen are positionable and operable.
Compared with the prior art, the invention has the beneficial effects that:
(1) the uniformity is good. The position of the solution nozzle in the corrosion process moves, and various corrosion uniformity can be controlled within 5% by matching with different rotating speeds of the wafer in solutions with different viscosities;
(2) the controllability is strong. The reaction of titanium with hydrofluoric acid is extremely severe, and the use of low-concentration hydrofluoric acid, coupled with a long etching time and the above-mentioned uniformity, allows to control the fluctuations in the etching result to a minimum. In addition, the spray corrosion system accurately controls the solution proportion, the temperature and the mechanical operation, and water is sprayed for washing in time after corrosion, so that the controllability of the corrosion process is improved; the fluctuation of the edge position of the aluminum metal, the fluctuation of the sheet inside and between sheets is within +/-2 um, and the fluctuation of the edge position of the titanium metal is within +/-1 um;
(3) the cleanliness is high. The trench etch tends to accumulate contamination and to stick back to the wafer surface, resulting in die loss. The single-chip spray corrosion mode ensures that the solution is used for one time, the loss amount is controllable, and the contamination is greatly reduced;
(4) no hidden trouble of reliability. After the bottom layer titanium metal is corroded, due to the existence of side corrosion, the edge of titanium can retract into the edge of aluminum metal to form a gap, and if solution or contamination enters the gap, great reliability hidden danger which cannot be detected is brought. Finally, aluminum corrosion is added, and titanium is exposed to at least 0.1um, so that the hidden danger of gap structure and reliability can be eliminated;
(5) the metal appearance is good. The aluminum metal is rough and has larger thickness, the appearance with irregular edges is very easy to appear in the longer corrosion process, the yield loss is brought, the higher corrosion temperature is used for controlling the higher corrosion rate, and the poor appearance of the metal edges caused by the factors such as photoresist deformation or uniformity and wettability in the corrosion process is avoided by matching the control of the spray flow and the rotating speed.
Drawings
Fig. 1 is a schematic flow chart of a method for implementing a metal electrode structure according to an embodiment of the present invention.
Fig. 2 is a schematic structural diagram of a metal electrode finally obtained according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer and more comprehensible, the technical solutions in the embodiments of the present invention are described in detail below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are not all embodiments of the present invention, but only some embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any inventive step, are within the scope of the present invention.
Fig. 1 is a schematic flow chart of a wet etching method for a titanium-aluminum double-layer metal electrode single sheet according to an embodiment of the present invention, and as shown in fig. 1, the wet etching method for a titanium-aluminum double-layer metal electrode single sheet according to the present invention includes the following steps:
in step 101, the surface of the substrate is already made into a titanium-aluminum double-layer metal by a metallization evaporation process: the titanium is positioned at the bottom layer and has the thickness of 180 nm; the aluminium is located the top layer, and thickness is 5 um. Coating AZ1500 photoresist on the surface of the aluminum, and photoetching positive photoresist to obtain square array glue blocks with the width of 50um and the interval of 20um, and exposing aluminum metal in a region to be corroded;
in step 102, the wafer is transferred into a single-chip spray etching system, the surface to be etched faces upwards, and a cavity door is closed;
in step 103, pre-spraying aluminum etching solution for 15 seconds;
in step 104, spraying and corroding aluminum metal by using aluminum corrosive liquid heated to 75 ℃ at the flow rate of 290mL/min, wherein the corrosion time is 300 seconds, and the rotating speed of a wafer is 200R/min;
in the step 105, deionized water with the flow rate of 700mL/min is used for washing for 80 seconds, aluminum corrosive liquid on the surface of the wafer is washed clean, and the rotating speed of the wafer is 100R/min;
in step 106, pre-spraying diluted hydrofluoric acid for 15 seconds;
in step 107, spraying and corroding titanium metal at a flow rate of 520mL/min by using diluted hydrofluoric acid with the temperature of 22 ℃, wherein the corrosion time is 150 seconds, the wafer rotating speed is 150R/min, and a titanium structure on the surface of the substrate 201 is formed, such as 202 in FIG. 2;
in step 108, deionized water with the flow rate of 700mL/min is used for washing for 40 seconds, and the diluted hydrofluoric acid on the surface of the wafer is washed clean, wherein the rotating speed of the wafer is 150R/min;
in step 109, aluminum metal is spray-etched by using an aluminum etching solution heated to 60 ℃ at a flow rate of 200mL/min, the etching time is 60 seconds, the wafer rotation speed is 150R/min, and an aluminum structure on the titanium surface is formed, as shown in 203 in FIG. 2;
in the step 110, deionized water with the flow rate of 700mL/min is used again for washing for 80 seconds, the aluminum corrosive liquid on the surface of the wafer is washed clean, and the rotating speed of the wafer is 100R/min;
in step 111, the wafer is rotated at a high speed at a rotating speed of 2000R/min for spin-drying for 120 seconds;
in step 112, hot nitrogen heated to 80 ℃ is sprayed on the surface of a wafer rotating at a low speed of 400R/min at a flow rate of 1L/min after passing through isopropanol, and the wafer is dehydrated;
in step 113, opening the cavity, and transferring the corroded and dehydrated wafer out of the single-chip corrosion system;
in step 114, the wafer is soaked with DMF solution heated to 60 deg.C for 20 minutes to remove the photoresist on the wafer surface.
In the above step, the aluminum etching solution is a mixed solution of phosphoric acid, nitric acid, acetic acid and deionized water, wherein the molar ratio of each component is as follows: nitric acid: acetic acid: water 1-60: 1-40: 1-30: 1-80; the diluted hydrofluoric acid is a mixed solution of hydrofluoric acid and deionized water, wherein the molar ratio of each component is hydrofluoric acid: 1-30 parts of water: 170; the spray nozzle for spraying the aluminum corrosive liquid, the spray nozzle for spraying the diluted hydrofluoric acid, the spray nozzle for spraying the deionized water and the spray nozzle for spraying the hot nitrogen have the movement tracks of reciprocating from the edge of the wafer to the radial 3/4 position of the wafer, the movement speed is 4 cm/s, in the pre-spraying in the step 103 and the step 106, the spray nozzle is far away from the wafer, and the solution cannot touch metal on the surface of the wafer.
The above description is only one specific example of the present invention and should not be construed as limiting the invention in any way. It will be apparent to persons skilled in the relevant art that various modifications and changes in form and detail can be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (10)
1. A method for realizing a metal electrode structure is characterized by comprising the following steps:
(1) coating photoresist on the surface of the metal, and photoetching to form a mask; the metal electrode is composed of titanium metal and aluminum metal;
(2) transferring the photoetched wafer into a single-chip spray corrosion system, and sealing a cavity;
(3) spraying aluminum corrosive liquid to corrode aluminum metal;
(4) washing the aluminum corrosive liquid remained on the surface of the wafer by using deionized water;
(5) spraying diluted hydrofluoric acid to corrode titanium metal;
(6) washing the diluted hydrofluoric acid remained on the surface of the wafer by using deionized water;
(7) spraying aluminum corrosive liquid to corrode aluminum metal again;
(8) washing the aluminum corrosive liquid remained on the surface of the wafer by using deionized water;
(9) spin-drying and dehydrating the wafer;
(10) opening the cavity and transferring the corroded wafer out;
(11) and removing the photoresist on the surface of the wafer by using an organic solution.
2. The method of claim 1, wherein the titanium metal is in the bottom layer and has a thickness of 50-500 nm; the aluminum metal is on the top layer, and the thickness is 1-10 um.
3. The method of claim 2, wherein the resulting electrode structure has a bottom titanium metal edge that extends at least 0.1um beyond a top aluminum metal edge.
4. The manufacturing method according to claim 1, wherein the photoresist is a positive photoresist.
5. The manufacturing method of claim 1, wherein the aluminum etching solution is a mixed solution of phosphoric acid, nitric acid, acetic acid and deionized water, wherein the molar ratio of the components is, phosphoric acid: nitric acid: acetic acid: water 1-60: 1-40: 1-30: 1-80.
6. The manufacturing method according to claim 1, wherein the diluted hydrofluoric acid is a mixed solution of hydrofluoric acid and deionized water, wherein the molar ratio of each component is hydrofluoric acid: 1-30 parts of water: 170.
7. the production method according to claim 1, wherein the liquid ejection time in the step (3) is 10 to 500 seconds, the liquid ejection time in the step (5) is 10 to 500 seconds, and the liquid ejection time in the step (7) is 1 to 300 seconds.
8. The manufacturing method according to claim 1, wherein the aluminum etchant temperature is controlled to 40-90 ℃ and the diluted hydrofluoric acid temperature is controlled to 10-50 ℃.
9. The method of claim 1, wherein the wafer rotation speed is 0 to 2500R/min.
10. The method of claim 1, wherein the nozzles for the solution, deionized water, and nitrogen are positionable and operable.
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| CN202011575601.7A CN112701039A (en) | 2020-12-28 | 2020-12-28 | Method for realizing metal electrode structure |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005215330A (en) * | 2004-01-29 | 2005-08-11 | Kyocera Corp | Liquid crystal display device and method for manufacturing the same |
| CN105702606A (en) * | 2016-03-03 | 2016-06-22 | 京东方科技集团股份有限公司 | Gas-liquid spray etching device and method |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005215330A (en) * | 2004-01-29 | 2005-08-11 | Kyocera Corp | Liquid crystal display device and method for manufacturing the same |
| CN105702606A (en) * | 2016-03-03 | 2016-06-22 | 京东方科技集团股份有限公司 | Gas-liquid spray etching device and method |
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