CN117546101A - 用于光刻设备中的掩模版的热调节的系统、方法和装置 - Google Patents
用于光刻设备中的掩模版的热调节的系统、方法和装置 Download PDFInfo
- Publication number
- CN117546101A CN117546101A CN202280044880.5A CN202280044880A CN117546101A CN 117546101 A CN117546101 A CN 117546101A CN 202280044880 A CN202280044880 A CN 202280044880A CN 117546101 A CN117546101 A CN 117546101A
- Authority
- CN
- China
- Prior art keywords
- patterning device
- state
- adjustment
- lithographic apparatus
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003750 conditioning effect Effects 0.000 title claims abstract description 40
- 238000000034 method Methods 0.000 title claims abstract description 33
- 238000000059 patterning Methods 0.000 claims abstract description 339
- 238000004519 manufacturing process Methods 0.000 claims abstract description 55
- 238000001816 cooling Methods 0.000 claims abstract description 43
- 230000004044 response Effects 0.000 claims description 27
- 239000012530 fluid Substances 0.000 claims description 13
- 230000001143 conditioned effect Effects 0.000 claims description 8
- 230000001419 dependent effect Effects 0.000 claims description 5
- 239000000758 substrate Substances 0.000 description 50
- 230000005855 radiation Effects 0.000 description 46
- 238000012546 transfer Methods 0.000 description 19
- 238000007689 inspection Methods 0.000 description 11
- 238000001459 lithography Methods 0.000 description 8
- 238000009826 distribution Methods 0.000 description 7
- 238000005286 illumination Methods 0.000 description 7
- 239000010410 layer Substances 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 210000001747 pupil Anatomy 0.000 description 5
- 238000001514 detection method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000015654 memory Effects 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000005381 magnetic domain Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000010363 phase shift Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
- G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70783—Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Toxicology (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202163213898P | 2021-06-23 | 2021-06-23 | |
| US63/213,898 | 2021-06-23 | ||
| PCT/EP2022/066044 WO2022268560A1 (en) | 2021-06-23 | 2022-06-13 | Systems, methods, and devices for thermal conditioning of reticles in lithographic apparatuses |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117546101A true CN117546101A (zh) | 2024-02-09 |
Family
ID=82361203
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202280044880.5A Pending CN117546101A (zh) | 2021-06-23 | 2022-06-13 | 用于光刻设备中的掩模版的热调节的系统、方法和装置 |
Country Status (4)
| Country | Link |
|---|---|
| KR (1) | KR20240024837A (ko) |
| CN (1) | CN117546101A (ko) |
| TW (1) | TW202318106A (ko) |
| WO (1) | WO2022268560A1 (ko) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58159329A (ja) * | 1982-03-17 | 1983-09-21 | Canon Inc | 半導体焼付け装置及び焼付け方法 |
| JPH0276212A (ja) * | 1988-09-13 | 1990-03-15 | Canon Inc | 多重露光方法 |
| JP2006078673A (ja) * | 2004-09-08 | 2006-03-23 | Nsk Ltd | 近接露光装置 |
| CN112997117A (zh) * | 2018-11-05 | 2021-06-18 | Asml控股股份有限公司 | 测量光刻设备中的图案形成装置的变形的设备和方法 |
-
2022
- 2022-06-13 CN CN202280044880.5A patent/CN117546101A/zh active Pending
- 2022-06-13 WO PCT/EP2022/066044 patent/WO2022268560A1/en active Application Filing
- 2022-06-13 KR KR1020237044075A patent/KR20240024837A/ko unknown
- 2022-06-22 TW TW111123144A patent/TW202318106A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| KR20240024837A (ko) | 2024-02-26 |
| WO2022268560A1 (en) | 2022-12-29 |
| TW202318106A (zh) | 2023-05-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication |