CN117497472A - Centering mechanism, wafer lifting system, mounting method of wafer lifting system and thin film deposition device - Google Patents

Centering mechanism, wafer lifting system, mounting method of wafer lifting system and thin film deposition device Download PDF

Info

Publication number
CN117497472A
CN117497472A CN202311469403.6A CN202311469403A CN117497472A CN 117497472 A CN117497472 A CN 117497472A CN 202311469403 A CN202311469403 A CN 202311469403A CN 117497472 A CN117497472 A CN 117497472A
Authority
CN
China
Prior art keywords
centering
wafer
process chamber
thimble
piece
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202311469403.6A
Other languages
Chinese (zh)
Inventor
张驰
李旭峰
黄明策
崔雨
陈新益
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Piotech Inc
Original Assignee
Piotech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Piotech Inc filed Critical Piotech Inc
Priority to CN202311469403.6A priority Critical patent/CN117497472A/en
Publication of CN117497472A publication Critical patent/CN117497472A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The invention provides a centering mechanism, a wafer lifting system, a thin film deposition device and a mounting method of the wafer lifting system. The centering mechanism includes: the annular first centering piece is arranged in a through hole of the bottom of the wafer lifting system, the thimble pin rod penetrates through the bottom of the process chamber, the outer diameter of the annular first centering piece is matched with the first diameter of the through hole, and the inner diameter of the annular first centering piece is matched with the second diameter of the thimble pin rod; and the first end of the second centering piece is clamped with the downward protruding part of the thimble supporting plate of the wafer lifting system, and the second end of the second centering piece is clamped with the handle part below the heating disc in the process chamber so as to match the first centering piece to realize the centering of the wafer lifting system and the heating disc.

Description

Centering mechanism, wafer lifting system, mounting method of wafer lifting system and thin film deposition device
Technical Field
The present invention relates to the field of thin film deposition, and more particularly, to a centering mechanism, a wafer lifting system, a thin film deposition apparatus, and a method for installing the wafer lifting system.
Background
In thin film deposition apparatus, a wafer lift is a critical component. The main function of the method is to move the wafer to be processed from a storage position (usually comprising a wafer box and a buffer zone) to a deposition chamber or other processing areas and to move the wafer back after processing is finished, so that external impurities are prevented from entering a deposition system, and the deposition quality of a film is ensured.
In the process of lifting the wafer by the existing wafer lifting system, the ejector pin supporting plate is firstly required to be jacked by the ejector pin rod, and then the ejector pin is supported by the ejector pin supporting plate, so that the lifting of the wafer is realized. Then, the thimble is lowered by the self gravity action of the heavy hammer below the thimble. However, in the actual operation process, if the equipment is slightly deviated from the neutral, the thimble and the heavy hammer are caused to slide down, so that the thimble is clamped in the thimble hole of the heating disc, and even the wafer fragments are caused.
In order to overcome the above-mentioned drawbacks of the prior art, there is a need in the art for a centering technique for centering a wafer lift system, so as to avoid risks of drop of a weight caused by a centering deviation of the wafer lift system, and so as to ensure that a wafer is not damaged during transportation.
Disclosure of Invention
The following presents a simplified summary of one or more aspects in order to provide a basic understanding of such aspects. This summary is not an extensive overview of all contemplated aspects, and is intended to neither identify key or critical elements of all aspects nor delineate the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed description that is presented later.
In order to overcome the above-mentioned drawbacks of the prior art, the present invention provides a centering mechanism, a wafer lifting system, a thin film deposition apparatus, and a method for installing a wafer lifting system, which are used for centering the wafer lifting system, so as to avoid risks of falling of a weight caused by centering deviation of the wafer lifting system, and ensure that a wafer is not damaged during transportation.
Specifically, the centering mechanism provided according to the first aspect of the present invention includes: the annular first centering piece is arranged in a through hole of the bottom of the wafer lifting system, the thimble pin rod penetrates through the bottom of the process chamber, the outer diameter of the annular first centering piece is matched with the first diameter of the through hole, and the inner diameter of the annular first centering piece is matched with the second diameter of the thimble pin rod; and the first end of the second centering piece is clamped with the downward protruding part of the thimble supporting plate of the wafer lifting system, and the second end of the second centering piece is clamped with the handle part below the heating disc in the process chamber so as to match the first centering piece to realize the centering of the wafer lifting system and the heating disc.
Further, in some embodiments of the present invention, the first centering member includes a first stop portion and/or a second stop portion, wherein the first stop portion is located above the via and has a third diameter greater than the via to limit downward displacement of the first centering member, and the second stop portion is located below the via and has a fourth diameter greater than the via to limit upward displacement of the first centering member.
Further, in some embodiments of the invention, the first centering element has a smooth inner sidewall, and/or the inner sidewall of the first centering element is coated with a lubricating medium.
Further, in some embodiments of the present invention, the first end of the second centering member has a first snap fit portion that conforms to the side shape of the projection of the ejector pin blade to laterally snap fit the projection, and/or the second end of the second centering member has a second snap fit portion that conforms to the side shape of the shank of the heating plate to laterally snap fit the shank.
Further, in some embodiments of the present invention, the outer edge of the second centering member conforms to the shape of and conforms to the inner wall of the process chamber to effect centering of the thimble plate and/or the heating plate with the process chamber.
Further, in some embodiments of the invention, the second snap-fit portion and/or the outer edge of the second centering member has smooth sides and/or is coated with a lubricating medium.
Further, in some embodiments of the present invention, the second centering member has a multi-layered structure, wherein the first clamping portion and/or the second clamping portion is located on the first layered structure below the second centering member, and the second layered structure above the second centering member is further provided with a third clamping portion adapted to a side shape of the body of the ejector pin supporting plate, so as to clamp the body of the ejector pin supporting plate from the side.
Further, a wafer lift system according to a second aspect of the present invention includes: a centering mechanism according to the first aspect of the present invention; the top end of the ejector pin rod extends into the process chamber through a first centering piece of a through hole arranged at the bottom of the process chamber; the lower surface of the downward protruding part of the thimble supporting plate is connected with the top end of the thimble pin rod, and the side surface of the protruding part is connected with the handle part below the heating disc in the process chamber through the second centering piece so as to realize the centering of the thimble supporting plate and the heating disc; and the heavy hammer at the lower end of the plurality of ejector pins is positioned on the upper surface of the ejector pin supporting plate, and the top ends of the heavy hammer penetrate through the plurality of ejector pin through holes on the heating plate to extend onto the heating plate so as to lift the wafer on the heating plate under the driving of the ejector pin rod and the ejector pin supporting plate, and when the ejector pin rod and the ejector pin supporting plate fall back, the wafer is driven to fall back onto the heating plate under the action of the gravity of the heavy hammer.
Further, a thin film deposition apparatus according to a third aspect of the present invention includes: a process chamber having a heating plate disposed therein; and the wafer lifting system according to the second aspect of the present invention is configured to lift the wafer on the heating plate during the wafer transfer process, and drive the wafer to fall back onto the heating plate during the process, so as to perform a thin film deposition process on the wafer.
Further, the method for installing the wafer lift system according to the fourth aspect of the present invention includes the steps of: mounting an annular first centering piece into a via hole in the bottom of a process chamber, wherein the outer diameter of the first centering piece is adapted to a first diameter of the via hole and the inner diameter thereof is adapted to a second diameter of a top pin; extending the top end of the thimble pin rod into the process chamber through the first centering piece and connecting the top end of the thimble pin rod to the lower surface of a downward protruding part of a thimble supporting plate positioned in the process chamber; and clamping the first end of the second centering piece to the protruding part, and clamping the second end of the second centering piece to a handle below the heating plate in the process chamber so as to match the first centering piece to realize the centering of the wafer lifting system and the heating plate.
Drawings
The above features and advantages of the present invention will be better understood after reading the detailed description of embodiments of the present disclosure in conjunction with the following drawings. In the drawings, the components are not necessarily to scale and components having similar related features or characteristics may have the same or similar reference numerals.
Fig. 1 illustrates a schematic structure of a thin film deposition apparatus provided according to some embodiments of the present invention.
Fig. 2 illustrates a schematic structural view of a first centering member provided in accordance with some embodiments of the present invention.
Fig. 3 illustrates a schematic structural view of a top pin provided in accordance with some embodiments of the present invention.
Fig. 4A illustrates a schematic structural view of a second centering member provided in accordance with some embodiments of the present invention.
Fig. 4B illustrates a schematic structural view of a second centering member provided in accordance with some embodiments of the present invention.
FIG. 5 illustrates a schematic view of a configuration of a thimble support plate provided in accordance with some embodiments of the present invention.
Fig. 6 illustrates a centering structure schematic of a second centering member provided in accordance with some embodiments of the invention.
Fig. 7 is a flow chart illustrating an installation method of a wafer lift system according to some embodiments of the present invention.
Reference numerals:
1. process chamber
11. Heating plate
111. Via hole
112. Handle portion
12. Wafer with a plurality of wafers
21. Pin rod of ejector pin
22. First centering piece
221. First limit part
222. Second limit part
23. Second centering piece
231. First clamping part
232. Second clamping part
233. Third clamping part
24. Thimble
25. Heavy hammer
26. Thimble supporting plate
261. Projection part
2611. Screw bolt
Detailed Description
Further advantages and effects of the present invention will become apparent to those skilled in the art from the disclosure of the present specification, by describing the embodiments of the present invention with specific examples. While the description of the invention will be presented in connection with a preferred embodiment, it is not intended to limit the inventive features to that embodiment. Rather, the purpose of the invention described in connection with the embodiments is to cover other alternatives or modifications, which may be extended by the claims based on the invention. The following description contains many specific details for the purpose of providing a thorough understanding of the present invention. The invention may be practiced without these specific details. Furthermore, some specific details are omitted from the description in order to avoid obscuring the invention.
In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
In addition, the terms "upper", "lower", "left", "right", "top", "bottom", "horizontal", "vertical" as used in the following description should be understood as referring to the orientation depicted in this paragraph and the associated drawings. This relative terminology is for convenience only and is not intended to be limiting of the invention as it is described in terms of the apparatus being manufactured or operated in a particular orientation.
It will be understood that, although the terms "first," "second," "third," etc. may be used herein to describe various elements, regions, layers and/or sections, these elements, regions, layers and/or sections should not be limited by these terms and these terms are merely used to distinguish between different elements, regions, layers and/or sections. Accordingly, a first component, region, layer, and/or section discussed below could be termed a second component, region, layer, and/or section without departing from some embodiments of the present invention.
As described above, in the process of lifting a wafer by the conventional wafer lifting system, the ejector pin supporting plate is firstly required to be lifted by the ejector pin rod, and then the ejector pin is lifted by the ejector pin supporting plate, so that the lifting of the wafer is realized. Then, the thimble is lowered by the self gravity action of the heavy hammer below the thimble. However, in the actual operation process, if the equipment is slightly deviated from the neutral, the thimble and the heavy hammer are caused to slide down, so that the thimble is clamped in the thimble hole of the heating disc, and even the wafer fragments are caused.
In order to overcome the above-mentioned drawbacks of the prior art, the present invention provides a centering mechanism, a wafer lifting system, a thin film deposition apparatus, and a method for installing a wafer lifting system, which are used for centering the wafer lifting system, so as to avoid risks of falling of a weight caused by centering deviation of the wafer lifting system, and ensure that a wafer is not damaged during transportation.
In some non-limiting embodiments, the centering mechanism provided in the first aspect of the present invention may be configured to be implemented in the wafer lift system provided in the second aspect of the present invention. The wafer lift system may be obtained by implementing the method for installing a wafer lift system provided in the fourth aspect of the present invention, and may be configured to be implemented in the thin film deposition apparatus provided in the third aspect of the present invention.
Please refer to fig. 1 to 6. Fig. 1 illustrates a schematic structure of a thin film deposition apparatus provided according to some embodiments of the present invention. Fig. 2 illustrates a schematic structural view of a first centering member provided in accordance with some embodiments of the present invention. Fig. 3 illustrates a schematic structural view of a top pin provided in accordance with some embodiments of the present invention. Fig. 4A illustrates a schematic structural view of a second centering member provided in accordance with some embodiments of the present invention. Fig. 4B illustrates a schematic structural view of a second centering member provided in accordance with some embodiments of the present invention.
FIG. 5 illustrates a schematic view of a configuration of a thimble support plate provided in accordance with some embodiments of the present invention. Fig. 6 illustrates a centering structure schematic of a second centering member provided in accordance with some embodiments of the invention.
As shown in fig. 1 to 6, the thin film deposition apparatus includes a heating plate 11 and a wafer lift system of a process chamber 1. Here, a heating plate 11 is disposed inside the process chamber 1 to heat a wafer 12 thereon. The wafer lifting system comprises a thimble pin rod 21, a thimble supporting plate 26, a plurality of thimbles 24 and a centering mechanism. The centering mechanism is used for lifting the wafer 12 on the heating plate 11 in the wafer conveying process and driving the wafer 12 to fall back onto the heating plate 11 in the process to perform a thin film deposition process on the wafer 12.
First centering member 22 second centering member 23 first centering member 22 the heater plate 11 further, the top end of the thimble pin rod 21 extends into the process chamber 1 via the first centering member 22 of the via 111 provided in the bottom of the process chamber 1. The downward projection 261 of the ejector pin support plate 26 has its lower surface connected to the top end of the ejector pin rod 21, and the side surface of the projection 261 is connected to the shank 112 below the heating plate 11 in the process chamber 1 via the second centering member 23 to center the ejector pin support plate 26 with the heating plate 11. The weights 25 at the lower ends of the plurality of ejector pins 24 are positioned on the upper surface of the ejector pin supporting plate 26, and the top ends of the weights extend to the upper part of the heating plate 11 through the plurality of ejector pin 24 through holes on the heating plate 11 so as to lift the wafer 12 on the heating plate 11 under the driving of the ejector pin rod 21 and the ejector pin supporting plate 26, and when the ejector pin rod 21 and the ejector pin supporting plate 26 fall back, the wafer 12 is driven to fall back onto the heating plate 11 under the action of the gravity of the weights 25.
Thus, the centering mechanism includes a first centering member 22 and a second centering member 23. The first centering piece 22 serves to center the top pin shaft 21 with the via hole 111. The second centering member 23 is configured to cooperate with the first centering member 22 to center the wafer lift system with the heating plate 11.
As shown in fig. 2 to 3, the first centering piece 22 is annular, and a pin 21 of the top needle provided on the wafer lift system passes through the through hole 111 at the bottom of the process chamber 1, and its outer diameter is adapted to the first diameter of the through hole 111 so as to pass through the through hole 111. The inner diameter of the first centering piece 22 is adapted to the second diameter of the ejector pin shaft 21 such that the ejector pin shaft 21 passes through its annular inner side wall. Here, the first centering piece 22 has a smooth inner side wall, and/or the inner side wall of the first centering piece 22 is coated with a lubricating medium, thereby reducing friction to smoothly displace the ejector pin shaft 21 up and down in the through hole 111.
Further, the first centering piece 22 includes a first limiting portion 221 and/or a second limiting portion 222. The first stopper 221 is located above the via 111 and has a third diameter larger than the via to restrict downward displacement of the first centering member 22. The second limiting portion 222 is located below the via hole and has a fourth diameter larger than the via hole to limit upward displacement of the first centering member 22.
Second centering member 23 as shown in fig. 4A-4B and fig. 5-6, the first end of the second centering member 23 is clamped to the downward projection 261 of the thimble supporting plate 26 of the wafer lift system, and the second end is clamped to the handle 112 below the heating plate 11 in the process chamber 1, so as to cooperate with the first centering member 22 to realize the centering of the wafer lift system and the heating plate 11.
Further, the first end of the second centering member 23 has a first engaging portion 231 adapted to the side shape of the protruding portion 261 of the ejector pin holder 26 to engage the protruding portion 261 from the side, thereby avoiding the influence of the ejector pin 21 being connected to the ejector pin holder 26 by a bolt.
Further, the second end of the second centering piece 23 has a second engagement portion 232 that accommodates the side shape of the shank 112 of the heating disk 11 to engage the shank 112 from the side. Here, the second clamping portion 232 has smooth sides and/or is coated with a lubricating medium to reduce friction so that the second clamping portion 232 is brought into close contact with the handle 112 and smoothly moves up and down along it.
Further, the outer edge of the second centering member 23 is adapted to the shape of the inner wall of the process chamber 1 and conforms to the inner wall of the process chamber 1 to achieve centering of the thimble support plate 26 and/or the heating plate 11 with the process chamber 1. The outer edge has smooth sides and/or is coated with a lubricating medium in order to reduce friction, so that the outer edge is brought into close contact with the inner wall of the process chamber 1 and is displaced smoothly up and down along it.
In addition, the second centering member 23 has a multi-layer structure, wherein the first clamping portion 231 and/or the second clamping portion 232 are located in the first layer structure below the second centering member 23, and the second layer structure above the second centering member 23 is further provided with a third clamping portion 233 adapted to the side shape of the body of the ejector pin support plate 26, so as to clamp the body of the ejector pin support plate 26 from the side, thereby avoiding affecting the connection of the ejector pin rod 21 to the ejector pin support plate 26 through the bolt.
The working principle of the above-described wafer lift system and its centering mechanism will be described below in connection with some embodiments of the method of installing the wafer lift system. Those skilled in the art will appreciate that these examples of the method of installing a wafer lift system are merely non-limiting embodiments of the present invention, and are intended to clearly illustrate the general concepts of the present invention and to provide some embodiments that are convenient for public implementation, and are not intended to limit the overall functionality or overall operation of the wafer lift system and its centering mechanism. Similarly, the method for installing the wafer lift system is only a non-limiting embodiment, and the execution subject or execution sequence of each step in the method for installing the wafer lift system is not limited.
Referring to fig. 7, fig. 7 is a flow chart illustrating an installation method of a wafer lift system according to some embodiments of the invention.
As shown in fig. 7, the wafer lift system may be installed by first installing the annular first centering member 22 into the via hole at the bottom of the process chamber 1, wherein the outer diameter of the first centering member 22 is adapted to the first diameter of the via hole and the inner diameter thereof is adapted to the second diameter of the pin shaft 21.
Thereafter, the tip of the ejector pin rod 21 is inserted into the process chamber 1 through the first centering piece 22 and is connected to the lower surface of the downward projection 261 of the ejector pin holder 26 located in the process chamber 1. Here, first, three screws 2611 connecting the ejector pin shaft 21 to the ejector pin holder 26 are pre-tightened, and then the screws 2611 are tightened to prepare for mounting the second centering member 23.
Finally, the first end of the second centering member 23 is clamped to the protrusion 261, and the second end of the second centering member 23 is clamped to the handle 112 below the heating plate 11 in the process chamber 1 to cooperate with the first centering member 22 to center the wafer lift system with the heating plate 11.
In summary, the centering mechanism, the wafer lifting system and the thin film deposition device provided by the invention, in combination with the installation method of the wafer lifting system, can be used for centering the wafer lifting system, thereby avoiding risks of sliding down of the heavy punch 25 and the like caused by centering deviation of the wafer lifting system, and ensuring that the wafer 12 is not damaged in the process of transportation.
While, for purposes of simplicity of explanation, the methodologies are shown and described as a series of acts, it is to be understood and appreciated that the methodologies are not limited by the order of acts, as some acts may, in accordance with one or more embodiments, occur in different orders and/or concurrently with other acts from that shown and described herein or not shown and described herein, as would be understood and appreciated by those skilled in the art.
The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (10)

1. A centering mechanism, comprising:
the annular first centering piece is arranged in a through hole of the bottom of the wafer lifting system, the thimble pin rod penetrates through the bottom of the process chamber, the outer diameter of the annular first centering piece is matched with the first diameter of the through hole, and the inner diameter of the annular first centering piece is matched with the second diameter of the thimble pin rod; and
and the first end of the second centering piece is clamped with the downward protruding part of the thimble supporting plate of the wafer lifting system, and the second end of the second centering piece is clamped with the handle part below the heating disc in the process chamber so as to match the first centering piece to realize the centering of the wafer lifting system and the heating disc.
2. The centering mechanism of claim 1, wherein the first centering member comprises a first stop portion and/or a second stop portion, wherein,
the first limiting part is positioned above the through hole and is provided with a third diameter larger than the through hole so as to limit the downward displacement of the first centering piece,
the second limiting part is positioned below the through hole and is provided with a fourth diameter larger than the through hole so as to limit the upward displacement of the first centering piece.
3. The centering mechanism of claim 2, wherein the first centering element has a smooth inner sidewall and/or the inner sidewall of the first centering element is coated with a lubricating medium.
4. The centering mechanism of claim 1, wherein the first end of the second centering member has a first snap-fit portion that conforms to the side shape of the projection of the ejector pin support plate to laterally snap-fit the projection, and/or
The second end of the second centering member has a second engagement portion adapted to the side shape of the shank portion of the heating plate to engage the shank portion from the side.
5. The centering mechanism of claim 4, wherein an outer edge of said second centering member conforms to and conforms to an inner wall of said process chamber to effect centering of said thimble carrier and/or said heating plate with said process chamber.
6. The centering mechanism of claim 5, wherein said second snap-fit portion and/or said outer edge of said second centering member has smooth sides and/or is coated with a lubricating medium.
7. The centering mechanism of claim 4, wherein said second centering member has a multi-layered structure, wherein said first and/or second clamping portions are located in a first layered structure below said second centering member,
the second layer structure above the second centering piece is also provided with a third clamping part which is suitable for the side shape of the body of the thimble supporting plate so as to clamp the body of the thimble supporting plate from the side.
8. A wafer lift system, comprising:
the centering mechanism of any one of claims 1-7;
the top end of the ejector pin rod extends into the process chamber through a first centering piece of a through hole arranged at the bottom of the process chamber;
the lower surface of the downward protruding part of the thimble supporting plate is connected with the top end of the thimble pin rod, and the side surface of the protruding part is connected with the handle part below the heating disc in the process chamber through the second centering piece so as to realize the centering of the thimble supporting plate and the heating disc; and
the heavy hammer at the lower end of the plurality of ejector pins is positioned on the upper surface of the ejector pin supporting plate, and the top ends of the plurality of ejector pins penetrate through the plurality of ejector pin through holes on the heating plate to extend onto the heating plate so as to lift the wafer on the heating plate under the driving of the ejector pin rod and the ejector pin supporting plate, and when the ejector pin rod and the ejector pin supporting plate fall back, the wafer is driven to fall back onto the heating plate under the action of the gravity of the heavy hammer.
9. A thin film deposition apparatus, comprising:
a process chamber having a heating plate disposed therein; and
the wafer lift system of claim 8, wherein the wafer lift system is configured to lift a wafer on the heating platen during a wafer transfer process and to drive the wafer back down the heating platen during a process to perform a thin film deposition process on the wafer.
10. The method for installing the wafer lifting system is characterized by comprising the following steps of:
mounting an annular first centering piece into a via hole in the bottom of a process chamber, wherein the outer diameter of the first centering piece is adapted to a first diameter of the via hole and the inner diameter thereof is adapted to a second diameter of a top pin;
extending the top end of the thimble pin rod into the process chamber through the first centering piece and connecting the top end of the thimble pin rod to the lower surface of a downward protruding part of a thimble supporting plate positioned in the process chamber; and
and clamping the first end of the second centering piece to the protruding part, and clamping the second end of the second centering piece to a handle part below the heating disc in the process chamber so as to match the first centering piece to realize the centering of the wafer lifting system and the heating disc.
CN202311469403.6A 2023-11-03 2023-11-03 Centering mechanism, wafer lifting system, mounting method of wafer lifting system and thin film deposition device Pending CN117497472A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202311469403.6A CN117497472A (en) 2023-11-03 2023-11-03 Centering mechanism, wafer lifting system, mounting method of wafer lifting system and thin film deposition device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202311469403.6A CN117497472A (en) 2023-11-03 2023-11-03 Centering mechanism, wafer lifting system, mounting method of wafer lifting system and thin film deposition device

Publications (1)

Publication Number Publication Date
CN117497472A true CN117497472A (en) 2024-02-02

Family

ID=89677698

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202311469403.6A Pending CN117497472A (en) 2023-11-03 2023-11-03 Centering mechanism, wafer lifting system, mounting method of wafer lifting system and thin film deposition device

Country Status (1)

Country Link
CN (1) CN117497472A (en)

Similar Documents

Publication Publication Date Title
KR101369702B1 (en) Method for pre-heating probe card
KR100491161B1 (en) Semiconductor manufacturing system for thermal process
WO2022095794A1 (en) Carrying device and semiconductor reaction chamber
KR20120010167A (en) Transferred object rotating device
JP4824588B2 (en) Substrate alignment device
CN107481955B (en) Assembling device applied to semiconductor equipment
TWI534946B (en) Plasma processing device
CN112133657A (en) Semiconductor processing equipment and method for transmitting wafer
KR20090086786A (en) Substrate processing apparatus
CN117174644B (en) Wafer heating bearing device, wafer heating production line and wafer heating method
CN117497472A (en) Centering mechanism, wafer lifting system, mounting method of wafer lifting system and thin film deposition device
CN105448785A (en) Semi-conductor film forming equipment, automatic positioning and clamping structures of wafer and clamping method
KR102094542B1 (en) Vision inspection apparatus
KR101145240B1 (en) Apparatus for supporting wafer
JP2009272362A (en) Wafer mounting device
CN109698155B (en) Substrate processing apparatus including elevating guide part
CN108987324B (en) Wafer bearing equipment
US10418264B2 (en) Assembling device used for semiconductor equipment
KR20090048202A (en) Apparatus for chucking a substrate and method of chucking the substrate
KR101873542B1 (en) Door lifting device for installing hinge
CN205452244U (en) Semiconductor film forming equipment, wafer automatic positioning clamping structure
KR102613640B1 (en) Solar cell wafer belt magazine
CN221486478U (en) Thimble support, wafer lifting mechanism and process chamber
KR20150014179A (en) Susceptor for chemical of vapor deposition apparatus
CN219336684U (en) Threading device

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination