CN117492336A - Alignment mark and pattern alignment method - Google Patents
Alignment mark and pattern alignment method Download PDFInfo
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- CN117492336A CN117492336A CN202410001827.8A CN202410001827A CN117492336A CN 117492336 A CN117492336 A CN 117492336A CN 202410001827 A CN202410001827 A CN 202410001827A CN 117492336 A CN117492336 A CN 117492336A
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- 238000000034 method Methods 0.000 title claims abstract description 24
- 239000003550 marker Substances 0.000 claims description 62
- 239000012780 transparent material Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 130
- 239000000463 material Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 238000001514 detection method Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 241001391944 Commicarpus scandens Species 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/708—Mark formation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/682—Mask-wafer alignment
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- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The application relates to the technical field of semiconductor processing, in particular to an alignment mark and a pattern alignment method. An alignment mark comprising: the alignment mark pattern, the first mark group, the second mark group, the third mark group, the fourth mark group, the first mark group, the second mark group, the third mark group and the fourth mark group form a ring pattern to enclose the alignment mark pattern in the middle, the alignment mark pattern, the first mark group, the second mark group, the third mark group and the fourth mark group are different. The alignment mark can be quickly found through the alignment mark in the embodiment of the application, and the alignment efficiency is greatly improved.
Description
Technical Field
The application relates to the technical field of semiconductor processing, in particular to an alignment mark and a pattern alignment method.
Background
In the prior art, some two-dimensional material transfer apparatuses have no special device for loading/unloading wafers/masks, and require manual loading/unloading of wafers/masks. Because the mask is inversely installed, the space is narrow, the manual loading/unloading is inconvenient, and the mask is easy to break by mistake. The two-dimensional material transfer apparatus needs to achieve alignment, that is, alignment of the wafer and the mask is achieved by alignment of the wafer and the alignment mark pattern on the mask. However, the positions of the wafer and the mask after manual loading are random, and the absolute position and the relative position of the wafer and the mask are different each time. The CCD field of view (observable position, area) for observing the alignment mark pattern is fixed, so that the alignment mark pattern on the mask is required to be searched each time by adjusting the CCD position, and then the wafer table is moved to search the alignment mark pattern of the wafer, the whole process is also random, and the alignment efficiency is very low.
Disclosure of Invention
The embodiment of the application provides an alignment mark and a graph alignment method which are beneficial to improving alignment efficiency.
In a first aspect, an embodiment of the present application provides an alignment mark, including:
the pattern of the alignment marks is aligned with the pattern of the marks,
a first mark group positioned in a first direction of the alignment mark pattern,
a second mark group positioned in a second direction of the alignment mark pattern,
a third mark group positioned in a third direction of the alignment mark pattern,
a fourth mark group positioned in a fourth direction of the alignment mark pattern,
the first mark group, the second mark group, the third mark group and the fourth mark group form an annular pattern together to enclose the alignment mark pattern in the middle,
the alignment mark pattern, the first mark group, the second mark group, the third mark group, and the fourth mark group are different from each other.
According to the foregoing embodiment of the first aspect of the present application,
the first marker group includes a plurality of first graphic elements arranged in an array,
the second marker group includes a plurality of second graphic elements arranged in an array,
the third marker group includes a plurality of third graphic elements arranged in an array,
the fourth population of indicia comprises a plurality of fourth graphic elements arranged in an array,
at least one of the first graphic element, the second graphic element, the fourth graphic element and the fourth graphic element is different from the other three in at least one of the following points:
The arrangement density of the plurality of graphic elements is different,
the direction of extension of the individual graphic elements is different,
the pattern size of the individual graphic elements varies,
the pattern shape of the individual graphic elements is different.
According to any of the foregoing embodiments of the first aspect of the present application, the alignment mark comprises
A first mark region located in a first direction of the alignment mark pattern, first graphic elements of the first mark group uniformly filling the first mark region,
a second mark region located in a second direction of the alignment mark pattern, the second pattern elements of the second mark group uniformly filling the second mark region,
a third mark region located in a third direction of the alignment mark pattern, third graphic elements of the third mark group uniformly filling the third mark region,
a fourth mark region located in a fourth direction of the alignment mark pattern, fourth graphic elements of the fourth mark group uniformly filling the fourth mark region,
the first mark area, the second mark area, the third mark area and the fourth mark area form a graph with a rectangular or square outline.
According to any of the foregoing embodiments of the first aspect of the present application,
the first mark region, the second mark region, the third mark region and the fourth mark region jointly enclose a central region, and the alignment mark pattern is positioned in the central region.
According to any of the preceding embodiments of the first aspect of the present application, the central region is rectangular or square in shape.
In a second aspect, an embodiment of the present application provides a pattern alignment method, including the following steps
S100, providing a mask, wherein the first surface of the mask is provided with the alignment mark;
s200, acquiring an image of a mask by using an image acquisition device, and if the acquired image of the mask belongs to a first mark group, controlling the mask to move a preset distance in a direction opposite to a first direction; if the acquired mask image belongs to the second mark group, controlling the mask to move a preset distance in a direction opposite to the second direction; if the acquired mask image belongs to the third mark group, controlling the mask to move a preset distance in the direction opposite to the third direction; if the acquired mask image belongs to the fourth mark group, controlling the mask to move a preset distance in the direction opposite to the fourth direction;
step S200 is repeated until the alignment mark pattern appears in the middle of the field of view of the image acquisition device.
According to the second aspect of the present application, in step S200, if the obtained mask image portion belongs to one of the first marker group, the second marker group, the third marker group and the fourth marker group and the other portion belongs to the other of the first marker group, the second marker group, the third marker group and the fourth marker group, the mask is controlled to move a preset distance in a direction opposite to the corresponding one of the first direction, the second direction, the third direction and the fourth direction, and then to move a preset distance in a direction opposite to the corresponding other one of the first direction, the second direction, the third direction and the fourth direction.
According to any of the foregoing embodiments of the second aspect of the present application: the first mark group, the second mark group, the third mark group and the fourth mark group are sequentially arranged along the clockwise direction;
if the obtained mask image part belongs to the first mark group and the other part belongs to the second mark group, then
The mask is controlled to move a preset distance in a direction opposite to the first direction and then to move a preset distance in a direction opposite to the second direction, or,
the mask is controlled to move a preset distance to the opposite direction of the second direction, and then to move a preset distance to the opposite direction of the first direction;
if the obtained mask image part belongs to the second mark group and the other part belongs to the third mark group, then
The mask is controlled to move a preset distance in the opposite direction of the second direction and then to move a preset distance in the opposite direction of the third direction, or,
the mask is controlled to move a preset distance to the opposite direction of the third direction, and then to move a preset distance to the opposite direction of the second direction;
if the obtained mask image part belongs to the third mark group and the other part belongs to the fourth mark group, then
The mask is controlled to move a preset distance in the direction opposite to the third direction and then to move a preset distance in the direction opposite to the fourth direction, or,
The mask is controlled to move a preset distance to the opposite direction of the fourth direction, and then to move a preset distance to the opposite direction of the third direction;
if the obtained mask image part belongs to the fourth mark group and the other part belongs to the first mark group, then
The mask is controlled to move a preset distance in the direction opposite to the fourth direction and then to move a preset distance in the direction opposite to the first direction, or,
the mask is controlled to move a preset distance in the opposite direction of the first direction and then to move a preset distance in the opposite direction of the fourth direction.
According to any one of the foregoing embodiments of the second aspect of the present application, the area of the alignment mark on the mask, which is not marked, is made of transparent material, and the pattern alignment method further includes the following steps
S300, providing a wafer, wherein a second surface of the wafer is provided with the alignment mark in the embodiment, and the first surface is adjacent to the second surface and is positioned above the second surface; the alignment mark pattern, the first mark group, the second mark group, the third mark group and the fourth mark group on the wafer are different from those on the mask;
s400, acquiring an image of a wafer by using an image acquisition device, and if the acquired image of the wafer belongs to a first mark group of the wafer, controlling the wafer to move a preset distance in a direction opposite to a first direction; if the acquired wafer image belongs to a second mark group of the wafer, the wafer is controlled to move a preset distance in a direction opposite to the second direction; if the acquired wafer image belongs to a third mark group of the wafer, the wafer is controlled to move a preset distance in the direction opposite to the third direction; if the acquired wafer image belongs to a fourth mark group of the wafer, the wafer is controlled to move a preset distance in a direction opposite to the fourth direction;
Step S400 is repeated until the alignment mark pattern of the wafer appears in the middle of the field of view of the image acquisition device.
According to any of the foregoing embodiments of the second aspect of the present application,
the first mark group on the mask and the first mark group on the wafer both comprise a plurality of graphic elements arranged in an array, the arrangement density of the plurality of graphic elements contained in the first mark group on the wafer is larger than that of the plurality of graphic elements contained in the first mark group on the mask, and the size of the single graphic element in the first mark group on the wafer is smaller than that of the single graphic element in the first mark group on the mask; and/or
The second mark group on the mask and the second mark group on the wafer both comprise a plurality of graphic elements arranged in an array, the arrangement density of the plurality of graphic elements contained in the second mark group on the wafer is greater than the arrangement density of the plurality of graphic elements contained in the second mark group on the mask, and the size of the single graphic element in the second mark group on the wafer is smaller than the size of the single graphic element in the second mark group on the mask; and/or
The third mark group on the mask and the third mark group on the wafer both comprise a plurality of graphic elements arranged in an array, the arrangement density of the plurality of graphic elements contained in the third mark group on the wafer is greater than the arrangement density of the plurality of graphic elements contained in the third mark group on the mask, and the size of the single graphic element in the third mark group on the wafer is smaller than the size of the single graphic element in the third mark group on the mask; and/or
The fourth mark group on the mask and the fourth mark group on the wafer both comprise a plurality of graphic elements arranged in an array, the arrangement density of the plurality of graphic elements contained in the fourth mark group on the wafer is larger than the arrangement density of the plurality of graphic elements contained in the fourth mark group on the mask, and the size of the single graphic element in the fourth mark group on the wafer is smaller than the size of the single graphic element in the fourth mark group on the mask.
In a third aspect, an embodiment of the present application provides a method for aligning a pattern, including the following steps
P100, providing a prealigned mask, wherein one surface of the mask is provided with the alignment mark;
p200, acquiring an image of the mask by using an image acquisition device, and if the acquired image of the mask belongs to a first mark group, controlling the mask to move a preset distance in a direction opposite to a first direction; if the acquired mask image belongs to the second mark group, controlling the mask to move a preset distance in a direction opposite to the second direction; if the acquired mask image belongs to the third mark group, controlling the mask to move a preset distance in the direction opposite to the third direction; if the acquired mask image belongs to the fourth mark group, controlling the mask to move a preset distance in the direction opposite to the fourth direction;
Step P200 is repeated until the alignment mark pattern appears in the middle of the field of view of the image acquisition device.
In the alignment mark of the embodiment of the application, since the alignment mark pattern, the first mark group, the second mark group, the third mark group and the fourth mark group are different from each other, and the relative position relationship between the first mark group, the second mark group, the third mark group and the fourth mark group and the alignment mark pattern is known, after the first mark group or the second mark group or the third mark group or the fourth mark group is observed, the direction of the alignment mark pattern can be predicted, and the alignment mark pattern can be quickly found through the alignment mark of the embodiment of the application, so that the alignment efficiency is greatly improved.
Drawings
FIG. 1 is a schematic diagram of an alignment mark according to an embodiment of the present disclosure;
FIG. 2a is a schematic diagram showing a first mark group in the alignment mark appearing in the field of view of the alignment detecting device according to an embodiment of the present application;
FIG. 2b is a schematic diagram showing a second mark group in the alignment mark appearing in the field of view of the alignment detecting device according to an embodiment of the present application;
FIG. 2c is a schematic diagram of an alignment mark pattern in an alignment mark appearing in a field of view of an alignment detection device according to an embodiment of the present application;
FIG. 3a is a schematic diagram of one embodiment of an alignment mark on a mask; FIG. 3b is a schematic diagram of one embodiment of alignment marks on a wafer;
fig. 4 is a schematic diagram of the partial coincidence of the alignment marks on the mask and the alignment marks on the wafer.
Detailed Description
Features and exemplary embodiments of various aspects of the present application are described in detail below to make the objects, technical solutions and advantages of the present application more apparent, and to further describe the present application in conjunction with the accompanying drawings and the detailed embodiments. It should be understood that the specific embodiments described herein are intended to be illustrative of the application and are not intended to be limiting. It will be apparent to one skilled in the art that the present application may be practiced without some of these specific details. The following description of the embodiments is merely intended to provide a better understanding of the present application by showing examples of the present application.
In the field of two-dimensional material transfer, it is desirable to transfer two-dimensional material from a growth substrate, also referred to as a mask, to a target substrate, also referred to as a wafer. In the process of transferring the two-dimensional material, the mask is generally positioned above, the wafer is positioned below, and the two-dimensional material is separated from the growth substrate through the transfer process and falls off to the wafer to be combined with the wafer. Therefore, during the transfer process, it is necessary to ensure that the mask is aligned with the wafer so that the two-dimensional material is released to a predetermined position on the wafer.
An alignment detection device (camera or the like) is generally used to detect whether the wafer or mask is aligned. How the inspection process of the alignment inspection device 320 is, depends on the alignment marks on the mask/wafer.
In order to further improve alignment efficiency, the embodiment of the application provides an alignment mark formed on the surface of the wafer/mask for pre-alignment of the wafer/mask.
As shown in fig. 1, the alignment marks provided herein include an alignment mark pattern 410, a first mark group 420, a second mark group 430, a third mark group 440, and a fourth mark group 450. The alignment mark pattern 410 is located at the center, the first mark group 420 is located at the first direction of the alignment mark pattern 410, the second mark group 430 is located at the second direction of the alignment mark pattern 410, the third mark group 440 is located at the third direction of the alignment mark pattern 410, the fourth mark group 450 is located at the fourth direction of the alignment mark pattern 410; as shown in fig. 1, in some embodiments, the first direction is to the left of the alignment mark pattern 410, the second direction is above the alignment mark pattern 410, the third direction is to the right of the alignment mark pattern 410, and the fourth direction is below the alignment mark pattern 410; the first mark group 420, the second mark group 430, the third mark group 440, and the fourth mark group 450 together form a ring pattern enclosing the alignment mark pattern 410 therebetween; the alignment mark pattern 410, the first mark group 420, the second mark group 430, the third mark group 440, and the fourth mark group 450 are different from one another.
In this embodiment, since the alignment mark pattern 410, the first mark group 420, the second mark group 430, the third mark group 440 and the fourth mark group 450 are different from each other, and the relative positional relationship between the first mark group 420, the second mark group 430, the third mark group 440 and the fourth mark group 450 and the alignment mark pattern 410 is known, after the first mark group 420, the second mark group 430, the third mark group 440 or the fourth mark group 450 are observed, the orientation of the alignment mark pattern 410 can be predicted, for example, taking the orientation shown in fig. 1 as an example, if the pattern currently observed by the alignment detecting device 320 belongs to the first mark group 420, the alignment mark pattern 410 can be determined to be located on the right side of the current field of view, and the wafer/mask can be controlled to move rightward. The alignment mark pattern 410 can be quickly found by the alignment mark in the embodiment of the application, and the alignment efficiency is greatly improved.
The alignment mark pattern 410, the first mark group 420, the second mark group 430, the third mark group 440, and the fourth mark group 450 may be different from each other, and may have various implementations, for example, different pattern shapes, different sizes, etc., based on the principle that the alignment mark pattern 410, the first mark group 420, the second mark group 430, the third mark group 440, and the fourth mark group 450 can be distinguished.
In some implementations, the first marker group 420 includes a plurality of first graphical elements 421 arranged in an array, the second marker group 430 includes a plurality of second graphical elements 431 arranged in an array, the third marker group 440 includes a plurality of third graphical elements 441 arranged in an array, the fourth marker group 450 includes a plurality of fourth graphical elements 451 arranged in an array, and at least one of the following differences exists between one of the first graphical elements 421, the second graphical elements 431, the third graphical elements 441, the fourth graphical elements 451 and the other three: a) The arrangement densities of the plurality of graphic elements are different; b) The extending directions of the single graphic elements are different; c) The pattern sizes of the individual graphic elements are different; d) The pattern shape of the individual graphic elements is different. If the shapes of the first graphic element 421, the second graphic element 431, the fourth graphic element 451 and the fourth graphic element 451 are different, it is possible to distinguish which of the first marker group 420, the second marker group 430, the third marker group 440 and the fourth marker group 450 the pattern in the current field belongs to by merely identifying the shapes. If the shapes of the first graphic element 421, the second graphic element 431, the fourth graphic element and the fourth graphic element 451 are the same, the first graphic element 421, the second graphic element 431, the fourth graphic element and the fourth graphic element 451 may be designed to be different sizes for distinction. Similarly, the four differences a to b can be arranged and combined to distinguish the first marker group 420, the second marker group 430, the third marker group 440 and the fourth marker group 450.
In some embodiments, to quickly determine the orientation of the alignment mark pattern 410, the alignment mark is divided into a plurality of regions, namely a first mark region Z1, a second mark region Z2, a third mark region Z3, and a fourth mark region; wherein the first mark region Z1 is located in the first direction of the alignment mark pattern 410, and the first graphic elements 421 of the first mark group 420 uniformly fill the first mark region Z1; the second mark region Z2 is located in the second direction of the alignment mark pattern 410, and the second graphic elements 431 of the second mark group 430 uniformly fill the second mark region Z2; the third marking region Z3 is located in the third direction of the alignment mark pattern 410, and the third graphic element 441 of the third marking group 440 uniformly fills the third marking region Z3; the fourth mark region is located in the fourth direction of the alignment mark pattern 410, and the fourth graphic elements 451 of the fourth mark group 450 uniformly fill the fourth mark region; the first marking area Z1, the second marking area Z2, the third marking area Z3 and the fourth marking area together form a figure with a rectangular or square outline. In this way, it is ensured that the alignment mark pattern 410 is surrounded by the graphic elements (including the first graphic element 421, the second graphic element 431, the third graphic element 441, and the fourth graphic element 451), and when the alignment detecting device 320 moves in a direction approaching the alignment mark pattern 410, the first mark group 420, the second mark group 430, the third mark group 440, or the fourth mark group 450 must be detected, so that the orientation of the alignment mark pattern 410 is determined.
Preferably, in order to further determine the direction in which the alignment mark pattern 410 is located, the first mark region Z1, the second mark region Z2, the third mark region Z3, and the fourth mark region are rectangular or square; thus, the first marking area Z1, the second marking area Z2, the third marking area Z3 and the fourth marking area together define a central area Z0 with a rectangular or square shape; and then the first direction, the second direction, the third direction and the fourth direction are reasonably arranged, so that the direction of the position alignment mark pattern 410 can be simply judged. For example, taking the orientation shown in fig. 1 as an example, the first direction is the-X direction, the third direction is the +x direction, the second direction is the +y direction, and the fourth direction is the-Y direction, so that after determining the orientation of the alignment mark pattern 410, the field of view of the alignment detection device 320 can be directly controlled to move along the X axis/Y axis to approach the alignment mark pattern 410.
In other embodiments, the first marking area Z1, the second marking area Z2, the third marking area Z3, and the fourth marking area together define a central area Z0, and the alignment mark pattern 410 is located in the central area Z0, and the central area Z0 is rectangular or square. The center area Z0 where the alignment mark pattern 410 is located is a regular rectangle or square, which may also facilitate identification of the orientation where the alignment mark pattern 410 is located.
In a fifth aspect, an embodiment of the present application provides a pattern alignment method, where the alignment mark is used to pre-align a mask. The pattern alignment method of the embodiment of the application comprises a step S100 and a step S200.
S100, providing a mask, wherein the whole mask is of a sheet-shaped structure and is provided with two surfaces which are oppositely arranged, one surface is a first surface, and the first surface of the mask is provided with the alignment mark.
In this embodiment of the present application, the mask further has a two-dimensional material or crystal particle to be transferred, and the area where the alignment mark is located is not overlapped with the area where the two-dimensional material or crystal particle to be transferred is located. The orientation of the mask can be judged by identifying the alignment marks on the mask, thereby adjusting the position of the mask.
S200, acquiring an image of a mask by using an image acquisition device, and if the acquired image of the mask belongs to a first mark group 420, controlling the mask to move a preset distance in a direction opposite to a first direction; if the acquired mask image belongs to the second mark group 430, the mask is controlled to move a preset distance in a direction opposite to the second direction; if the acquired mask image belongs to the third mark group 440, the mask is controlled to move a preset distance in a direction opposite to the third direction; if the acquired mask image belongs to the fourth marker group 450, the mask is controlled to move a predetermined distance in a direction opposite to the fourth direction.
In this embodiment, since the relative positional relationship between the first mark group 420, the second mark group 430, the third mark group 440, and the fourth mark group 450 and the alignment mark pattern 410 is known, when the mask image acquired by the image acquisition device belongs to one of the first mark group 420, the second mark group 430, the third mark group 440, and the fourth mark group 450, the orientation of the alignment mark pattern 410 can be determined, so that the mask is controlled to move a predetermined distance in the opposite direction of the first direction, the second direction, the third direction, or the fourth direction.
It is to be understood that, in the embodiment of the present application, since the positions and sizes of the first marker group 420, the second marker group 430, the third marker group 440 and the fourth marker group 450 are known, the distances between the first marker group 420, the second marker group 430, the third marker group 440 and the fourth marker group 450 and the alignment marker pattern 410 are also known, and thus, the preset distances herein are estimated according to the distances between the first marker group 420, the second marker group 430, the third marker group 440 and the fourth marker group 450 and the alignment marker pattern 410. The preset distance of each movement is determined according to the actual situation, and the preset distances between different movement times can be the same or different.
Step S200 is repeated until the alignment mark pattern 410 appears in the middle of the field of view of the image acquisition device.
As shown in fig. 1, the first direction is taken as the left side of the alignment mark pattern 410, the second direction is taken as the upper side of the alignment mark pattern 410, the third direction is taken as the right side of the alignment mark pattern 410, and the fourth direction is taken as the lower side of the alignment mark pattern 410 for illustration. If the first mark group 420 first appears in the field of view of the image capturing device (as shown in fig. 2 a), it can be determined that the alignment mark pattern 410 is located right of the first mark group 420 (+x direction), and thus the mask can be controlled to move a predetermined distance in the opposite direction of the first direction (right, i.e., +x direction); at this time, the mask pattern appearing in the field of view of the image capturing apparatus belongs to the second mark group 430 (as shown in fig. 2 b), it can be judged that the alignment mark pattern 410 is located below the second mark group 430 (-Y direction), and thus, the mask can be controlled to move a preset distance in the opposite direction of the second direction (lower, i.e., -Y direction); as shown in fig. 2c, the alignment mark pattern 410 appears in the middle of the field of view of the image acquisition device, and pre-alignment of the mask is completed.
In this embodiment, since the alignment mark pattern 410, the first mark group 420, the second mark group 430, the third mark group 440 and the fourth mark group 450 are different from each other, and the relative positional relationship between the first mark group 420, the second mark group 430, the third mark group 440 and the fourth mark group 450 and the alignment mark pattern 410 is known, the orientation of the alignment mark pattern 410 can be predicted after the first mark group 420, the second mark group 430, the third mark group 440 or the fourth mark group 450 is observed, and the alignment efficiency is greatly improved.
In some embodiments, in step S200, if the acquired mask image portion belongs to one of the first marker group 420, the second marker group 430, the third marker group 440 and the fourth marker group 450, and the other portion belongs to the other of the first marker group 420, the second marker group 430, the third marker group 440 and the fourth marker group 450, the mask is controlled to move a preset distance in a reverse direction of the corresponding one of the first direction, the second direction, the third direction and the fourth direction, and then to move a preset distance in a reverse direction of the corresponding other one of the first direction, the second direction, the third direction and the fourth direction.
For example, as shown in fig. 1, in some embodiments, the first marker group 420, the second marker group 430, the third marker group 440, and the fourth marker group 450 are disposed in sequence in a clockwise direction;
If the acquired mask image part belongs to the first mark group 420 and the other part belongs to the second mark group 430, the mask is controlled to move a preset distance in the opposite direction of the first direction, so that the first mark group 420 moves out of the view field of the image acquisition device, and then moves a preset distance in the opposite direction of the second direction, so that the second mark group 430 moves out of the view field of the image acquisition device; or, the mask is controlled to move a preset distance to the opposite direction of the second direction, so that the second mark group 430 moves out of the field of view of the image acquisition device, and then moves a preset distance to the opposite direction of the first direction;
if the acquired mask image portion belongs to the second mark group 430 and the other portion belongs to the third mark group 440, the mask is controlled to move a preset distance in the opposite direction of the second direction, so that the second mark group 430 moves out of the field of view of the image acquisition device, and then moves a preset distance in the opposite direction of the third direction, so that the third mark group 440 moves out of the field of view of the image acquisition device; or, the mask is controlled to move a preset distance to the opposite direction of the third direction, so that the third mark group 440 is moved out of the field of view of the image acquisition device, and then to move a preset distance to the opposite direction of the second direction, so that the second mark group 430 is moved out of the field of view of the image acquisition device;
If the acquired mask image part belongs to the third mark group 440 and the other part belongs to the fourth mark group 450, the mask is controlled to move a preset distance in the opposite direction of the third direction, so that the third mark group 440 moves out of the view field of the image acquisition device, and then moves a preset distance in the opposite direction of the fourth direction, so that the fourth mark group 450 moves out of the view field of the image acquisition device; or, the mask is controlled to move a preset distance to the opposite direction of the fourth direction, so that the fourth mark group 450 moves out of the field of view of the image acquisition device, and then to move a preset distance to the opposite direction of the third direction, so that the third mark group 440 moves out of the field of view of the image acquisition device;
if the acquired mask image part belongs to the fourth mark group 450 and the other part belongs to the first mark group 420, the mask is controlled to move a preset distance in the opposite direction of the fourth direction, so that the fourth mark group 450 moves out of the view field of the image acquisition device, and then moves a preset distance in the opposite direction of the first direction, so that the first mark group 420 moves out of the view field of the image acquisition device; or, the mask is controlled to move a predetermined distance in a direction opposite to the first direction, so that the first marker group 420 moves out of the field of view of the image capturing device, and then to move a predetermined distance in a direction opposite to the fourth direction, so that the fourth marker group 450 moves out of the field of view of the image capturing device.
The pattern alignment method of the embodiment of the application can also be used for pre-aligning the wafer. In some embodiments, the area of the alignment mark on the mask, which is not marked, is made of transparent material, and the pattern alignment method further includes step S300 and step S400.
S300, providing a wafer, wherein the whole wafer is of a lamellar structure and is provided with two surfaces which are oppositely arranged, one surface is a second surface, the second surface of the wafer is provided with the alignment mark, the first surface of the mask is adjacent to the second surface of the wafer, and the first surface of the mask is positioned above the second surface of the wafer, so that the alignment mark on the mask is ensured to be as close as possible to the alignment mark on the wafer, and the detection accuracy is improved; any one of the alignment mark pattern 410, the first mark group 420, the second mark group 430, the third mark group 440, and the fourth mark group 450 on the wafer is different from any one of the alignment mark pattern 410, the first mark group 420, the second mark group 430, the third mark group 440, and the fourth mark group 450 on the mask.
In some embodiments, the same image capturing device is required to capture images of the mask and the wafer to determine whether the mask and the wafer are aligned, and in a state in which the mask is aligned with the wafer, the alignment mark pattern 410 on the mask and the alignment mark pattern 410 on the wafer are both located in the middle of the field of view of the image capturing device; as shown in fig. 1, for convenience of distinction, the alignment mark pattern 410 on the mask is a wire frame, and the alignment mark pattern 410 on the wafer is a cross, so that the alignment mark pattern 410 on the wafer is not completely covered by the alignment mark pattern 410 on the mask in the case of alignment of the mask with the wafer, and the image acquisition device can still acquire and identify the alignment mark pattern 410 on the wafer.
Similarly, in order for the image capturing device to recognize the first mark group 420, the second mark group 430, the third mark group 440, and the fourth mark group 450 on the wafer while the mask is aligned with the wafer, the first mark group 420, the second mark group 430, the third mark group 440, and the fourth mark group 450 on the mask should leave blank areas without mark patterns, and the image capturing device can capture and recognize the images of the first mark group 420, the second mark group 430, the third mark group 440, and the fourth mark group 450 on the wafer while the mask is aligned with the wafer.
Of course, different image acquisition devices may be used to identify the alignment marks on the mask and the wafer, so that the alignment marks on the mask and the alignment marks on the wafer are staggered with each other in the state that the mask and the wafer are aligned.
S400, acquiring an image of the wafer by using an image acquisition device; if the acquired wafer image belongs to the first mark group 420 of the wafer, the wafer is controlled to move a preset distance in a direction opposite to the first direction; if the acquired wafer image belongs to the second mark group 430 of the wafer, the wafer is controlled to move a preset distance in a direction opposite to the second direction; if the acquired wafer image belongs to the third mark group 440 of the wafer, the wafer is controlled to move a preset distance in a direction opposite to the third direction; if the acquired wafer image belongs to the fourth marker group 450 of the wafer, the wafer is controlled to move a preset distance in a direction opposite to the fourth direction.
Repeating step S400 until the alignment mark pattern 410 of the wafer appears in the middle of the field of view of the image acquisition device; the pre-alignment of the mask to the wafer is completed.
In some embodiments, the first mark group 420 on the mask and the first mark group 420 on the wafer each include a plurality of graphic elements (the first graphic element 421 described above) arranged in an array, the first mark group 420 on the wafer includes a plurality of graphic elements having an arrangement density that is greater than an arrangement density of the plurality of graphic elements included in the first mark group 420 on the mask, and a size of a single graphic element within the first mark group 420 on the wafer is smaller than a size of a single graphic element within the first mark group 420 on the mask; as shown in fig. 3a (alignment mark on the mask) and fig. 3b (alignment mark on the wafer), the first graphic element 421 on the wafer and the mask are both thick straight lines, and the extending directions of the thick straight lines are the same (both extend along the Y-axis direction), but the thick straight lines in the first mark group 420 of the mask are shorter than the thick straight lines in the first mark group 420 of the wafer, and the thick straight line density in the first mark group 420 of the mask is smaller than the thick straight lines in the first mark group 420 of the wafer, so, when the mask is on the upper side and the wafer is on the lower side, the first graphic element 421 on the mask does not completely block the first graphic element 421 on the wafer, so that the image acquisition device can still acquire the pattern of the first graphic element 421 on the wafer, as shown in fig. 4.
Similarly, in some embodiments, the second mark group 430 on the mask and the second mark group 430 on the wafer each include a plurality of graphic elements (the second graphic elements 431 described above) arranged in an array, the second mark group 430 on the wafer includes a plurality of graphic elements arranged at a density greater than the second mark group 430 on the mask, and the size of the individual graphic elements within the second mark group 430 on the wafer is smaller than the size of the individual graphic elements within the second mark group 430 on the mask. As shown in fig. 3a and 3b, the second graphic element 431 on the wafer and the mask are both thick straight lines, and the extending directions of the thick straight lines are the same (both extend along the X-axis direction), but the thick straight lines in the second mark group 430 of the mask are shorter than the thick straight lines in the second mark group 430 of the wafer, and the thick straight line density in the second mark group 430 of the mask is smaller than the thick straight lines in the second mark group 430 of the wafer, so that when the mask is on, the wafer is under, the second graphic element 431 on the mask does not completely block the second graphic element 431 on the wafer, so that the image acquisition device can still acquire the pattern of the second graphic element 431 on the wafer.
Similarly, in some embodiments, the third group of marks 440 on the mask and the third group of marks 440 on the wafer each include a plurality of graphical elements (the third graphical element 441 described above) arranged in an array, the third group of marks 440 on the wafer includes a plurality of graphical elements arranged at a density greater than the third group of marks 440 on the mask, and the size of the individual graphical elements within the third group of marks 440 on the wafer is smaller than the size of the individual graphical elements within the third group of marks 440 on the mask. As shown in fig. 3a and 3b, the third graphic element 441 on the wafer and the mask are thick straight lines, and the extending directions of the thick straight lines are the same (both extend along the Y-axis direction), but the thick straight lines in the third mark group 440 of the mask are shorter than the thick straight lines in the third mark group 440 of the wafer, and the thick straight line density in the third mark group 440 of the mask is smaller than the thick straight lines in the third mark group 440 of the wafer, so that the third graphic element 441 on the mask does not completely block the third graphic element 441 on the wafer when the mask is on the wafer, so that the image acquisition apparatus can still acquire the pattern of the third graphic element 441 on the wafer.
Similarly, in some embodiments, the fourth marker group 450 on the mask and the fourth marker group 450 on the wafer each include a plurality of graphical elements (fourth graphical elements 451 as described above) arranged in an array, the fourth marker group 450 on the wafer includes a plurality of graphical elements having an arrangement density that is greater than an arrangement density of the plurality of graphical elements included in the fourth marker group 450 on the mask, and a size of a single graphical element within the fourth marker group 450 on the wafer is smaller than a size of a single graphical element within the fourth marker group 450 on the mask. As shown in fig. 3a and 3b, the fourth graphic element 451 on the wafer and the mask are both thick straight lines, and the extending directions of the thick straight lines are the same (both extend along the X-axis direction), but the thick straight lines in the fourth mark group 450 of the mask are shorter than the thick straight lines in the fourth mark group 450 of the wafer, and the thick straight line density in the fourth mark group 450 of the mask is smaller than the thick straight lines in the fourth mark group 450 of the wafer, so that the fourth graphic element 451 on the mask does not completely block the fourth graphic element 451 on the wafer when the mask is on the wafer and the wafer is under, so that the image acquisition apparatus can still acquire the pattern of the fourth graphic element 451 on the wafer.
In summary, in the pattern alignment method provided in the embodiment of the present application, the alignment mark on the mask may not completely cover the alignment mark on the wafer, although the mask is on the top and the wafer is on the bottom, the image acquisition device may still acquire the alignment mark on the wafer, so as to accurately determine the adjustment direction of the wafer.
Claims (10)
1. An alignment mark, comprising:
the pattern of the alignment marks is aligned with the pattern of the marks,
a first mark group positioned in a first direction of the alignment mark pattern,
a second mark group positioned in a second direction of the alignment mark pattern,
a third mark group positioned in a third direction of the alignment mark pattern,
a fourth mark group positioned in a fourth direction of the alignment mark pattern,
the first mark group, the second mark group, the third mark group and the fourth mark group form an annular pattern together to enclose the alignment mark pattern in the middle,
the alignment mark pattern, the first mark group, the second mark group, the third mark group, and the fourth mark group are different from each other.
2. The alignment mark of claim 1,
the first marker cluster includes a plurality of first graphic elements arranged in an array,
the second marker cluster includes a plurality of second graphic elements arranged in an array,
The third marker cluster includes a plurality of third graphic elements arranged in an array,
the fourth group of indicia includes a plurality of fourth graphic elements arranged in an array,
at least one of the first graphic element, the second graphic element, the fourth graphic element and the fourth graphic element is different from the other three:
the arrangement density of the plurality of graphic elements is different,
the direction of extension of the individual graphic elements is different,
the pattern size of the individual graphic elements varies,
the pattern shape of the individual graphic elements is different.
3. The alignment mark of claim 2, wherein: comprising
A first mark region located in a first direction of the alignment mark pattern, the first pattern elements of the first mark group uniformly filling the first mark region,
a second mark region located in a second direction of the alignment mark pattern, the second pattern elements of the second mark group uniformly filling the second mark region,
a third mark region located in a third direction of the alignment mark pattern, the third pattern elements of the third mark group uniformly filling the third mark region,
a fourth mark region located in a fourth direction of the alignment mark pattern, the fourth pattern elements of the fourth mark group uniformly filling the fourth mark region,
The first marking area, the second marking area, the third marking area and the fourth marking area jointly form a graph with a rectangular or square outline.
4. An alignment mark according to claim 3, wherein:
the first mark area, the second mark area, the third mark area and the fourth mark area jointly enclose a central area, and the alignment mark pattern is positioned in the central area.
5. The alignment mark of claim 4, wherein: the shape of the central region is rectangular or square.
6. A method of pattern alignment, characterized by: comprises the following steps of
S100, providing a mask, wherein a first surface of the mask has the alignment mark according to any one of claims 1 to 5;
s200, acquiring an image of the mask by using an image acquisition device, and if the acquired mask image belongs to a first mark group, controlling the mask to move a preset distance in a direction opposite to a first direction; if the acquired mask image belongs to the second mark group, controlling the mask to move a preset distance in a direction opposite to the second direction; if the acquired mask image belongs to the third mark group, controlling the mask to move a preset distance in the direction opposite to the third direction; if the acquired mask image belongs to the fourth mark group, controlling the mask to move a preset distance in the direction opposite to the fourth direction;
Step S200 is repeated until an alignment mark pattern appears in the middle of the field of view of the image acquisition device.
7. The pattern alignment method according to claim 6, wherein: in the step S200, if the obtained mask image portion belongs to one of the first mark group, the second mark group, the third mark group and the fourth mark group and the other portion belongs to the other of the first mark group, the second mark group, the third mark group and the fourth mark group, the mask is controlled to move a preset distance in a direction opposite to the corresponding one of the first direction, the second direction, the third direction and the fourth direction, and then to move a preset distance in a direction opposite to the corresponding other one of the first direction, the second direction, the third direction and the fourth direction.
8. The pattern alignment method according to claim 7, wherein: the first mark group, the second mark group, the third mark group and the fourth mark group are sequentially arranged along the clockwise direction;
if the obtained mask image part belongs to the first mark group and the other part belongs to the second mark group, then
The mask is controlled to move a preset distance in a direction opposite to the first direction and then to move a preset distance in a direction opposite to the second direction, or,
The mask is controlled to move a preset distance to the opposite direction of the second direction, and then to move a preset distance to the opposite direction of the first direction;
if the obtained mask image part belongs to the second mark group and the other part belongs to the third mark group, then
The mask is controlled to move a preset distance in the opposite direction of the second direction and then to move a preset distance in the opposite direction of the third direction, or,
the mask is controlled to move a preset distance to the opposite direction of the third direction, and then to move a preset distance to the opposite direction of the second direction;
if the obtained mask image part belongs to the third mark group and the other part belongs to the fourth mark group, then
The mask is controlled to move a preset distance in the direction opposite to the third direction and then to move a preset distance in the direction opposite to the fourth direction, or,
the mask is controlled to move a preset distance to the opposite direction of the fourth direction, and then to move a preset distance to the opposite direction of the third direction;
if the obtained mask image part belongs to the fourth mark group and the other part belongs to the first mark group, then
The mask is controlled to move a preset distance in the direction opposite to the fourth direction and then to move a preset distance in the direction opposite to the first direction, or,
The mask is controlled to move a preset distance in the opposite direction of the first direction and then to move a preset distance in the opposite direction of the fourth direction.
9. The pattern alignment method according to claim 8, wherein: the area without mark in the alignment mark on the mask is transparent material, and the pattern alignment method further comprises the following steps of
S300, providing a wafer, wherein a second surface of the wafer has the alignment mark according to any one of claims 1 to 5, and the first surface is adjacent to the second surface and is located above the second surface; the alignment mark pattern, the first mark group, the second mark group, the third mark group and the fourth mark group on the wafer are different from the alignment mark pattern, the first mark group, the second mark group, the third mark group and the fourth mark group on the mask;
s400, acquiring an image of the wafer by using an image acquisition device, and if the acquired image of the wafer belongs to a first mark group of the wafer, controlling the wafer to move a preset distance in a direction opposite to a first direction; if the acquired wafer image belongs to a second mark group of the wafer, the wafer is controlled to move a preset distance in a direction opposite to the second direction; if the acquired wafer image belongs to a third mark group of the wafer, the wafer is controlled to move a preset distance in the direction opposite to the third direction; if the acquired wafer image belongs to a fourth mark group of the wafer, the wafer is controlled to move a preset distance in a direction opposite to the fourth direction;
Step S400 is repeated until an alignment mark pattern of the wafer appears in the middle of the field of view of the image acquisition device.
10. The pattern alignment method according to claim 9, wherein:
the first mark group on the mask and the first mark group on the wafer both comprise a plurality of graphic elements arranged in an array, the arrangement density of the plurality of graphic elements contained in the first mark group on the wafer is greater than the arrangement density of the plurality of graphic elements contained in the first mark group on the mask, and the size of a single graphic element in the first mark group on the wafer is smaller than the size of a single graphic element in the first mark group on the mask; and/or
The second mark group on the mask and the second mark group on the wafer both comprise a plurality of graphic elements arranged in an array, the arrangement density of the plurality of graphic elements contained in the second mark group on the wafer is greater than the arrangement density of the plurality of graphic elements contained in the second mark group on the mask, and the size of a single graphic element in the second mark group on the wafer is smaller than the size of a single graphic element in the second mark group on the mask; and/or
The third mark group on the mask and the third mark group on the wafer both comprise a plurality of graphic elements arranged in an array, the arrangement density of the plurality of graphic elements contained in the third mark group on the wafer is greater than the arrangement density of the plurality of graphic elements contained in the third mark group on the mask, and the size of a single graphic element in the third mark group on the wafer is smaller than the size of a single graphic element in the third mark group on the mask; and/or
The fourth mark group on the mask and the fourth mark group on the wafer both comprise a plurality of graphic elements arranged in an array, the arrangement density of the plurality of graphic elements contained in the fourth mark group on the wafer is greater than the arrangement density of the plurality of graphic elements contained in the fourth mark group on the mask, and the size of the single graphic element in the fourth mark group on the wafer is smaller than the size of the single graphic element in the fourth mark group on the mask.
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