CN102736437A - Pattern formation apparatus and pattern formation method - Google Patents
Pattern formation apparatus and pattern formation method Download PDFInfo
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- CN102736437A CN102736437A CN2012100446831A CN201210044683A CN102736437A CN 102736437 A CN102736437 A CN 102736437A CN 2012100446831 A CN2012100446831 A CN 2012100446831A CN 201210044683 A CN201210044683 A CN 201210044683A CN 102736437 A CN102736437 A CN 102736437A
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- pattern
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- alignment mark
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/002—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor using materials containing microcapsules; Preparing or processing such materials, e.g. by pressure; Devices or apparatus specially designed therefor
- G03F7/0022—Devices or apparatus
- G03F7/0025—Devices or apparatus characterised by means for coating the developer
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C9/00—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important
- B05C9/08—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material and performing an auxiliary operation
- B05C9/10—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material and performing an auxiliary operation the auxiliary operation being performed before the application
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
- B05D7/24—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials for applying particular liquids or other fluent materials
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/002—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor using materials containing microcapsules; Preparing or processing such materials, e.g. by pressure; Devices or apparatus specially designed therefor
- G03F7/0022—Devices or apparatus
- G03F7/0032—Devices or apparatus characterised by heat providing or glossing means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/101—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by casting or moulding of conductive material
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/105—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by conversion of non-conductive material on or in the support into conductive material, e.g. by using an energy beam
- H05K3/106—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by conversion of non-conductive material on or in the support into conductive material, e.g. by using an energy beam by photographic methods
Abstract
The invention provides a pattern formation apparatus and a pattern formation method, and the pattern formation apparatus and the pattern formation method are capable of forming an alignment mark on a film comprising a liquid repellent agent. A pattern formation apparatus forming a specified pattern on a substrate comprises: a mark exposure part exposing a mark pattern as an alignment mark for the film comprising the liquid repellent agent and formed on the substrate; a mark printing part printing visual oil ink on an exposure region of the mark pattern to form an alignment mark; the pattern formation apparatus also comprises: a mark detection part detecting the alignment mark to obtain position information of the alignment mark; a regulation part changing the position of the pattern formed on the film or the position of the substrate based on the position information of the alignment mark, thereby regulating the position of the pattern; and an image forming part forming an image on the film.
Description
Technical field
The present invention relates to a kind of pattern apparatus for converting and pattern formation method that on substrate, forms predetermined pattern, particularly relate to a kind of can be in formed pattern apparatus for converting and the pattern formation method that comprises the good alignment mark of formation on the film of scolding liquor on the substrate.
Background technology
In recent years, the distribution of electronic circuit, and the technology that on substrate, forms fine patterns such as electric wiring pattern receive publicity.In the formation of this fine pattern, for example use the fluid ejection head (ink gun) of ink-jetting style.In this case, dripping diffusion from the ink gun spray has the liquid of metallics or resin particle and describes pattern, waits through heating to make its sclerosis, forms the electric wiring pattern.
And, go up to form the film of scolding fluidity at deflection substrates (supporter) such as PET or PEN, can also on the distribution of above-mentioned electronic circuit and substrate, form fine patterns such as electric wiring pattern.
For the distribution that forms aforesaid electronic circuit etc., must carry out aligned position, must form alignment mark in order to aligned position.The transparency of deflection such as PET or PEN substrate (supporter) is high; As the method that on the high flexible base plate of transparency, forms alignment mark as described above, for example open the method that has proposed in the 2011-1260 communique at the permanent operation mark of formation on glass (being equivalent to alignment mark) in Japanese Patent Laid.Open in the 2011-1260 communique in Japanese Patent Laid, use laser and be formed on glass.
As the method that on the high substrate of transparencies such as PET or PEN, forms alignment mark; Except above-mentioned Japanese Patent Laid is opened the 2011-1260 communique, also have following method: use thermal transfer printer and form alignment mark method, use and directly shine agent and form the method for alignment mark, on substrate, get out through hole (punching) and form the method etc. of alignment mark.
Therefore the substrate that transparency such as PET or PEN is high is a resin, considers from viewpoints such as thermotolerances, is difficult to use laser and forms alignment mark.And if utilize thermal transfer printer, then the formation precision of alignment mark is low, can't carry out pattern with high precision and form.In addition, in the method for using straight solarization agent, special layer must be set on substrate, have the high problem of cost.As for the method that gets out through hole (punching) at substrate, owing to be on transparency carrier, to hole, therefore have following problem: the accuracy of identification of alignment mark is low, when boring, produces dust etc. in addition.
Summary of the invention
The objective of the invention is to remove the problem points in the said prior art, providing can be in the pattern apparatus for converting and the pattern formation method that comprise the good alignment mark of formation on the film of scolding liquor.
In order to reach above-mentioned purpose; The 1st form of the present invention provides a kind of pattern apparatus for converting; It is the pattern apparatus for converting that on substrate, forms predetermined pattern; It is characterized in that comprising: mark exposure portion, make public and to become the indicia patterns of alignment mark for the formed film of scolding liquor that comprises on the said substrate; And label print portion, print visual printing ink in the exposure area of said indicia patterns, form said alignment mark.
Preferably also comprise: marker detection portion, detect printing the said alignment mark that said visual printing ink forms, obtain the positional information of said alignment mark; The adjustment part, based on the positional information of said alignment mark, the position that changes formed pattern on the said film perhaps changes the position of said substrate, thus adjustment forms the position of said pattern; And image forming part, on the said film of said substrate, form pattern.
In this case, preferred said image forming part comprises and makes pattern form the zone to become hydrophilic exposure portion, form the Printing Department that print in the zone becoming hydrophilic said pattern in the said film.
For example, said film is the film with hydrophilic and hydrophobic translation function (that is, can produce owing to the light of provision wavelengths hydrophilic and hydrophobic change), and said visual printing ink is to absorb or reflection does not make the printing ink of the light of the wavelength that the hydrophilic and hydrophobic of said film changes.In this case, said visual printing ink for example can use water-based ink or metal ink.
The 2nd form of the present invention provides a kind of pattern formation method; It is the pattern formation method that on substrate, forms predetermined pattern, it is characterized in that comprising: for formed the make public step of the indicia patterns that to become alignment mark of the film of scolding liquor that comprises on the said substrate; And print visual printing ink in the exposure area of said indicia patterns, form the step of said alignment mark.
Preferably also comprise: detect printing the said alignment mark that said visual printing ink forms, obtain the step of the positional information of said alignment mark; Based on the positional information of said alignment mark, the position that changes formed pattern on the said film perhaps changes the position of said substrate, thereby adjustment forms the step of the position of said pattern; And the step that on the said film of said substrate, forms pattern.
In this case, the step that on said film, forms pattern preferably includes the pattern that makes in the said film and forms the zone and become hydrophilic step, form the step that print in the zone becoming hydrophilic said pattern.
[effect of invention]
Through the present invention, the good alignment mark of formation on the film of scolding liquor can comprised.Can use alignment mark thus, on substrate, form predetermined pattern with high precision.
Description of drawings
Fig. 1 is the mode chart of the pattern apparatus for converting of expression the 1st example of the present invention.
Fig. 2 (a) is the model utility sectional view of employed substrate in the pattern apparatus for converting of expression the 1st example of the present invention, and Fig. 2 (b) is the mode chart of employed substrate in the pattern apparatus for converting of expression the 1st example of the present invention.
Fig. 3 (a)～Fig. 3 (c) is the mode chart of formation step of alignment mark of representing to utilize the pattern apparatus for converting of the 1st example of the present invention according to sequence of steps, and Fig. 3 (d)～Fig. 3 (i) is other routine mode charts of expression alignment mark.
Fig. 4 (a) is that expression utilizes the pattern apparatus for converting of the 1st example of the present invention and the mode chart of the thin film transistor (TFT) that forms, and Fig. 4 (b) is the sectional view that is equivalent to the H-H line of Fig. 4 (a).
Fig. 5 is the mode chart of the pattern apparatus for converting of expression the 2nd example of the present invention.
[explanation of symbol]
10,10a: pattern apparatus for converting (formation device)
12: mark formation portion
14: test section
16: exposure portion
18: image forming part
20: image processing part
22: mark exposure portion
24: light source
26: mask
28: label print portion
30: printing portion
40: turning axle
42: wireline reel
60：TFT
62: gate
64: semiconductor layer
66a: source electrode
66b: drain electrode
68: passage area
80: film
80a: the surface of film 80
82: gate insulation layer
82a: the surface of gate insulation layer
84: protective seam
100: alignment mark forms the zone
102: the pattern exposure zone
104: the territory, non-exposed area
110: visual printing ink
D: conveyance direction
M: alignment mark
S: pattern forms the zone
Z: substrate
Embodiment
Below, based on the represented suitable example of accompanying drawing, pattern apparatus for converting of the present invention and pattern formation method are specified.
Fig. 1 is the mode chart of the pattern apparatus for converting of expression the 1st example of the present invention.
Fig. 2 (a) is the model utility sectional view of employed substrate in the pattern apparatus for converting of expression the 1st example of the present invention, and Fig. 2 (b) is the mode chart of employed substrate in the pattern apparatus for converting of expression the 1st example of the present invention.
Pattern apparatus for converting 10 shown in Fig. 1 (be designated hereinafter simply as and form device 10) for example is that one side conveyance substrate Z on length direction simultaneously carries out the device of the spool of various processing to spool (roll to roll) mode.This formation device 10 includes mark formation portion 12, test section 14, exposure portion 16, image forming part 18 and image processing part 20.
In forming device 10, substrate Z is wound on the turning axle 40 and is installed as the roller shape.This turning axle 40 is devices of seeing substrate Z continuously off, on turning axle 40, is connected with for example motor (not shown).On conveyance direction D, see substrate Z through this motor continuously off.
And, be provided with the wireline reel 42 that the substrate Z through mark formation portion 12, test section 14, exposure portion 16, image forming part 18 is reeled.Be connected with for example motor (not shown) on this wireline reel 42.Make wireline reel 42 rotation through this motor, substrate Z is wound on the wireline reel 42 and becomes the roller shape.Go up conveyance substrate Z in conveyance direction D therefrom.
In this example, substrate Z uses such substrate that on substrate Z, is formed with film 80 shown in Fig. 2 (a).Film 80 comprises scolds liquor.Scolding liquor is the compound with hydrophilic and hydrophobic translation function (that is light, the for example ultraviolet light through provision wavelengths changes hydrophilic and hydrophobic).That is film 80 has the hydrophilic and hydrophobic translation function.Below, film 80 that is utilized among the substrate Z and the liquor of scolding that constitutes film 80 are specified.
The formation device 10 of this example be spool to the spool mode, therefore consider from viewpoints such as productivity, flexibilities, use resin film as substrate Z.This resin film is not had special restriction,, can in material known, shape, structure, thickness etc., suit to select about its material, shape, structure, thickness etc.
Resin film for example can be enumerated polyester resin films such as polyethylene terephthalate (PET), PEN (PEN) modified poly ester; Polyolefin resin films such as tygon (PE) resin film, polypropylene (PP) resin film, polystyrene resin film, cycloolefin resinoid; Vinyl resins such as PVC, polyvinylidene chloride film, polyetheretherketone (PEEK) resin film, polysulfones (PSF) resin film, polyethersulfone (PES) resin film, polycarbonate (PC) resin film, polyamide resin membrane of lipoprotein, polyimide resin film, acryl resin film, cellulose triacetate (TAC) resin film etc.
Utilize to form device 10 and make thin film transistor (TFT) (TFT), when using it for the situation of purposes such as display, substrate Z is preferably transparent resin film, gets final product so long as the transmittance of the wavelength of visible range is a resin film more than 80%.Wherein, The aspect of self-induced transparency property, thermotolerance, processing ease property, intensity and cost; Be preferably twin shaft and extend polyethylene terephthalate thin film, twin shaft extension PEN film, polyethersulfone film, polycarbonate film, more preferably twin shaft extends polyethylene terephthalate thin film, twin shaft extends the PEN film.
In addition; Form device 10 and also can be supply mode piecewise said as the back is civilian; In this case; Substrate Z can use various substrates such as Si wafer, quartz glass, glass, plastics, sheet metal, so long as can then not have special qualification in the substrate of substrate surface lamination shaping semiconductor film, metal film, dielectric film, organic membrane etc.
Secondly, the concrete example of scolding liquor that constitutes film 80 is explained.Film 80 is such as stated brings into play function as the hydrophilic and hydrophobic converting function material, is to comprise the film of scolding the fluidity agent.The thickness of this film 80 (thickness) is preferably 0.001 μ m～1 μ m, is preferably 0.01 μ m～0.1 μ m especially.
Constituting the scolding in the fluidity agent of film 80, in not carrying out the part of energy exposure that is scold in the fluidity zone, be preferably more than 50 ° with the contact angle of coating fluid, wherein more preferably more than 90 °.
And, scold in the fluidity agent above-mentioned, in part of having carried out energy exposure that is lyophily zone, be preferably below 40 ° with the contact angle of coating fluid, wherein more preferably below 20 °, be preferably especially below 10 °.
In addition, scold the poor of the regional wetting state of fluidity zone and lyophily, be preferably more than the 10mN/m with surface tensiometer.
In scolding the fluidity agent, inorganic material can be enumerated titanium dioxide (TiO
2), zinc paste (ZnO), tin oxide (SnO
2), strontium titanates (SrTiO
3), tungsten oxide (WO
3), bismuth oxide (Bi
2O
3), and iron oxide (Fe
2O
3) wait oxide.Can in those oxides, select more than a kind or 2 kinds and use, for example if titania then has Detitanium-ore-type and rutile-type, can use any kind, but be preferably anatase titanium dioxide.
In scolding the fluidity agent; Bonding agent uses main framing to have not the bonding agent of the high bond energy that decomposes owing to the optical excitation of oxide usually; When making bonding agent have the situation that effect owing to oxide makes the function that wetting state changes; The main framing that is preferably bonding agent has described high bond energy that does not decompose owing to the optical excitation of oxide and the bonding agent with the organic substituent that decomposes owing to the effect of oxide, for example can enumerate through sol gel reaction etc. to make hydrolysis such as chlorine or alkoxy silane, polycondensation give play to the organopolysiloxane of big intensity, the crosslinked organopolysiloxane etc. that repellency is arranged or scold the excellent reactive silicone of oiliness.
And, also can stable organo-silicon compound that do not carry out cross-linking reaction and the said organopolysiloxane as dimethyl polysiloxane so together be mixed in the bonding agent.
And, contain in oxide and also can contain in the layer can be in energy exposure the time owing to the effect of oxide is decomposed, make oxide contain the decomposed substance that the wetting state on the layer changes therefrom.This kind decomposed substance can be enumerated the surfactant with following function: owing to the effect of oxide is decomposed, and owing to decomposing the wetting state that photocatalyst contains laminar surface is changed.
Particularly can enumerate the non-ionic surfactant of fluorine class or silicone, and also can use cationic surfactant, anionic species surfactant, amphoteric surfactant.Except that surfactant, also can enumerate oligomer, polymkeric substance etc. such as polyvinyl alcohol (PVA), unsaturated polyester (UP), acryl resin, tygon, polydiallyl phthalate, ethylene-propylene-diene rubber (ethylene propylene diene monomer), epoxy resin, phenol resin, polyurethane, melamine resin, polycarbonate, PVC, polyamide, polyimide, styrene butadiene ribber, chloroprene rubber, polypropylene, polybutylene, polystyrene, polyvinyl acetate, nylon, polyester, polybutadiene, polybenzimidazoles, polyacrylonitrile, Polyglycol 166-450, polysulfide, polyisoprene.
In addition; The compound of lyophilyization has salt such as diazo salt, sulfonium salt, salt compounded of iodine; Adjacent nitrobenzyl sulfonate esters compound, and sensitizer and usefulness to nitrobenzyl sulfonate esters compound, N-acid imide sulfonate compound, oxime sulfonates compound, α-ketosulfonic acid ester compounds, diazido naphthoquinone-4-sulfonate compound, diazonium two sulphones, two sulphones, ketone sulphones, adjacent nitrobenzyl ester compounds, an alkoxybenzyl ester compounds, adjacent nitrobenzyl amide compound, phenacyl ester compounds, 2; 4-dinitro benzene sulfonyl ester, 2-diazonium-1; 3-dione compounds, phenol ester compound, adjacent nitrobenzyl oxybenzene compound, 2,5-cyclohexadiene ketonic compound, sulfonated polyolefin, aryl diazosulfonic acid ester salt etc.
In this example, hydrophilic and hydrophobic converting function material (performance makes critical surface tension produce the material of big variation as the function of scolding the fluidity agent owing to giving energy) also can be recited in the macromolecular material that side chain comprises the hydrophobicity base.
Can enumerate polyimide or directly or via combining base key has the compound of the side chain with hydrophobicity base on the main chain with skeleton such as (methyl) acrylic ester.The hydrophobicity base can be enumerated end structure
2CH
3,-CF
2CF
3,-CF (CF
3)
2,-C (CF
3)
3,-CF
2H ,-CFH
2Deng base.The long base of preferred carbon chain lengths in order to make the easy each other orientation of strand, more preferably carbon number is the base more than 4.In addition, the Polyfluoroalkyl that is substituted by fluorine atom more than 2 of the hydrogen atom of preferred alkyl, preferred especially carbon number are 4～20 Rf base, and especially preferred carbon number is 6～12 Polyfluoroalkyl.In Polyfluoroalkyl, have linear chain structure or branched structure, be preferably linear chain structure.In addition, the hydrophobicity base hydrogen atom that is preferably alkyl is in fact all replaced the perfluoroalkyl that forms by fluorine atom.Perfluoroalkyl is preferably with C
nF
2n+1Said base when the represented base of-(wherein, n is 4～16 integer), preferred especially n are 6～12 integer.Perfluoroalkyl can be linear chain structure and also can be branched structure, is preferably linear chain structure.In addition, the hydrophobicity base can enumerate have contain fluorine atoms not-CH
2CH
3,-CH (CH
3)
2,-C (CH
3)
3Base Deng end structure.In this case, in order to make strand orientation easily each other, also preferred carbon chain lengths is the base of length, and more preferably carbon number is the base more than 4.The hydrophobicity base can be linear chain structure and also can be branched structure, is preferably linear chain structure.It is the alkyl or the substituted phenyl of alkoxy of 1～12 straight chain, branched chain or ring-type that abovementioned alkyl also can contain by halogen atom, cyanic acid, phenyl, hydroxyl, carboxyl or carbon number.The macromolecular material that has the hydrophobicity base at side chain can be enumerated the macromolecular material that comprises polyimide.
Employed solvent can be enumerated alcohols solvents such as ethanol, methyl alcohol, propyl alcohol in this example, glycolic solvents such as monoethylene glycol, propylene glycol, diethylene glycol, cellosolve kind solvents such as 2-methyl cellosolve, cellosolvo, butoxy ethanol etc.
In addition, as long as label print portion 28 can supply with visual printing ink to the exposure area of the indicia patterns of having made public, then be not particularly limited mode of printing.For example, can use ink-jet, serigraphy, letterpress, intaglio printing.And, when carrying out the situation of overall printing, also can use ± thick aligned position precision about 2mm with the mode in the whole zone of the exposure area that covers indicia patterns.
Employed in the label print portion 28 in order to form the visual printing ink of alignment mark M; Absorb or reflection does not make the printing ink of the light of the wavelength that the hydrophilic and hydrophobic of film 80 changes in order when detecting alignment mark M, on film 80, not produce unwanted close and distant water conversion, can to use.Therefore, the wavelength that produces close and distant water conversion according to film 80 suits to select visual printing ink, for example uses reflection or the absorbing wavelength printing ink as the light more than the 500nm.In addition, visual printing ink for example can use water-based ink or metal ink.Below, to specifying in order to the visual printing ink that forms alignment mark M.
Visual printing ink (marker material) in order to form alignment mark M can use the printing ink that comprises dyestuff or pigment.Pigment has the mordant pigment that the organic pigment that comprises the slightly solubility pigment, organic pigment and polyvalent metal ion key knot form etc., and the organic pigment part can be enumerated azopigment, anthraquinone dye, phthalocyanine dye etc.For example, (phthalocyanine dye: absorption maximum wavelength (molar absorptivity) Lionol Blue GS) is 639nm&660nm (35000) to have replaced 3 sulfonic acid persons' of forming sodium salt in the copper phthalocyanine.
Dyestuff has water-soluble dye, oil-soluble dyes, and water-soluble dye is used in the water-soluble dye of water wettability bases such as having sulfonic group or carboxylic acid group in the pigment molecular more.The basic framework of the molecular structure of dyestuff have azo dyes, anthraquinone dye, phthalocyanine dye, cyanine dye, oxygen dyestuff, styryl dye, triarylmethane dye etc.Cyanine dye, oxygen the absorptivity of dyestuff big, even therefore under low concentration visibility also high.Therefore, visual printing ink preferably uses water-based ink (water-soluble dye).
This kind dyestuff for example has the represented dyestuff 1～dyestuff 4 of following Chemical formula 1～chemical formula 4.Those dye solubles are in water, and the absorption maximum wavelength (molar absorptivity) of each dyestuff is as follows.Each dyestuff 1～dyestuff 4 (Chemical formula 1～chemical formula 4) is even also have the absorption intensity of about 50% degree of absorption peak in the front and back 25nm that absorbs maximum wavelength.
Dyestuff 1 (Chemical formula 1): 552nm (65000)
Dyestuff 2 (Chemical formula 2): 644nm (104000)
Dyestuff 3 (chemical formula 3): 550nm (63000)
Dyestuff 4 (chemical formula 4): 747nm (260000)
[changing 1]
Sum: 2506
Molecular formula: C27H24N4O12S2.2K1
Molecular weight: 699.753
[changing 2]
Sum: 53538
Molecular formula: C29H26N4O18S4.4K1
Molecular weight: 885.923
[changing 3]
Sum: 20673
Molecular formula: C19H24N4O12S2.2K1
Molecular weight: 603.665
[changing 4]
Sum: 36389
Molecular formula: C35H44N2O12S4.3K1
Molecular weight: 852.117
As for the mark formation portion 12 of this example, for example that kind is formed at alignment mark M on the surperficial 80a of film 80 shown in Fig. 3 (a)～Fig. 3 (c).
At first, the mask 26 of mark exposure portion 22 is contacted with the surperficial 80a of the film 80 of substrate Z.Thereafter, such shown in Fig. 3 (a) from light source 22 and irradiation can make the light of scolding fluidity to be changed to hydrophilic wavelength, the alignment mark of the surperficial 80a of film 80 is formed zone 100 carry out circular exposure, obtain hydrophilic pattern exposure zone 102.In addition, the territory, non-exposed area 104 beyond the pattern exposure zone 102 is still for scolding fluidity.
Secondly; Go up conveyance substrate Z in conveyance direction D; For example such shown in Fig. 3 (b), the alignment mark of water-soluble visual printing ink 110 overall printings in the surperficial 80a of film 80 formed on the zone 100 with the mode in the whole zone of overlay pattern exposure area 102 through label print portion 28.In water wettability pattern exposure area 102, visual printing ink attracts and integrated each other therefrom, and that kind forms zone 100 formation alignment mark M at the alignment mark of the surperficial 80a of film 80 shown in Fig. 3 (c).At this moment, form in the zone 100 at the alignment mark of film 80, territory, non-exposed area 104 is for scolding fluidity, so visual printing ink is integrated and do not form mark etc.In addition, as for the alignment mark M shown in Fig. 3 (c), for example external diameter is 1mm, and the width of annulus portion is 100 μ m.
In this example, make the zone (pattern exposure zone 102) that becomes alignment mark M be water wettability, but be not limited thereto.For example, also can make the exposing patterns counter-rotating of Fig. 3 (a) and make and become hydrophilic zone and scold the zone of fluidity opposite with becoming, thereby form alignment mark M.In this case, such shown in 3 (d), alignment mark M is become scold fluidity and and need not print by visual printing ink, print zone in addition with visual printing ink, thus formation alignment mark M.
In this example, the shape of alignment mark M is not limited to circular.For example; Can shown in Fig. 3 (e), that kind be toroidal, can that kind be the quadrilateral shape shown in Fig. 3 (f) also, can shown in Fig. 3 (g), that kind be the ring-type of rectangle also; Can shown in Fig. 3 (h), that kind be the right angle trigonometry shape also, can that kind be the ring-type of right-angle triangle shown in 3 (i) also.In addition, in becoming the exposure area of lyophily, visual printing ink attracts and integrated each other, thereby forms alignment mark, and the therefore preferred narrow shape of area preferably has the shape of thin cyclic form.
In the alignment mark of the form shown in above-mentioned Fig. 3 (e)～Fig. 3 (i), also can make the exposing patterns counter-rotating, with Fig. 3 (d) zone that becomes alignment mark is become and scold fluidity, thereby form alignment mark.
Strain transducer is to use film 80 not produce the light of the wavelength that hydrophilic and hydrophobic changes and detects the device of alignment mark M, for example use light sources such as comprising LED, with the optical profile type strain transducer of imaging apparatuss such as CMOS, CCD.In addition, be reflection or absorbing wavelength when being the situation of visual printing ink of the light more than the 500nm in visual printing ink, but in light source, use the light source of illumination wavelength as the light more than the 500nm.Particularly, the wavelength of light source for example can use 633nm, 660nm, 590nm, infrared (IR).
In strain transducer, going up illumination wavelength in alignment mark M is the light more than the 500nm, the pattern shown in Fig. 2 (b) is formed the alignment mark M that the 4 corners institute of the outer edge of region S is provided with in advance and makes a video recording, and acquisition is the view data of 4 alignment mark M for example.As one group, export the view data of 4 alignment mark M to the aligned position test section.
The aligned position test section is based on the view data of each alignment mark M of gained in the strain transducer; Calculate position, the alignment mark M of each alignment mark M for example size, towards, and alignment mark M between distance etc.; Compare with the design load of the size of alignment mark M, allocation position etc., make the device of the strain information (positional information of alignment mark M) of substrate Z therefrom.The strain information of substrate Z for example is the flexible direction of substrate Z, the stroke of substrate Z.Flexible direction, stroke, the pattern that the strain information of this substrate Z is particularly formed region S by pattern that 4 alignment mark M enclosed forms sense of rotation, the rotation amount of region S and departs from pattern and form region S both extensive magnitude or reductions, and the dependent variable of trapezoidal shape etc. of sizing.Export the strain information of this substrate Z to image processing part 20.In addition, as after state in image processing part 20, make exposure based on the strain information of substrate Z and drip with correction data and spray and use correction data.
In addition, the shooting mode of the alignment mark M of strain transducer does not have special qualification, for example has: one side moves strain transducer two-dimentionally, one face the substrate Z that is fixed the alignment mark M form of making a video recording; One side moves substrate Z, a mode of making a video recording in the face of the alignment mark M of substrate Z etc.
The exposure unit 16 is to implement the modified processing apparatus, the reforming process will be formed on the substrate Z in the film 80, is formed by the image forming unit 18 having a pattern to change the image formation area is hydrophilic.Be provided with exposing unit (not shown) and gas feed unit (not shown) in this exposure portion 16.Exposure portion 16 is connected with image processing part 20.
In addition, so-called " changing into water wettability " is meant the less relatively state of contact angle that becomes with respect to film 80 drops.
Exposing unit is in the surperficial 80a of the film 80 of substrate Z, for example can film 80 be converted into the device of hydrophilic light (exposure) to the image forming area irradiation that becomes pattern.In exposing unit, light source uses the identical light source of wavelength with the light source 24 of mark exposure portion 22, but for example the use illumination wavelength is the light source of the light of 300 (nm), 365 (nm), 405 ultraviolet ranges such as (nm).
In exposing unit, when light source used the situation of laser, the output of laser for example was 10～hundreds of (mJ/cm
2), the diameter of laser (beam spot diameter) for example is 1 μ m～2 μ m.In exposing unit, when light source uses the situation of laser, can use various laser such as semiconductor laser, Solid State Laser, liquid laser, gas laser.
Exposing unit can use: the exposing unit, and the exposing unit of mask exposure mode that use the numerical digit Exposure mode of laser.
In the numerical digit Exposure mode,,, make image forming area become lyophily to becoming the image forming area irradiating laser of pattern based on the pattern data of the formed pattern of being exported from image processing part 20.
When exposing unit uses the situation of exposing unit of numerical digit Exposure mode; Can use following a series of mode: exposing unit is scanned along the direction with the conveyance direction D quadrature of substrate Z; For example to the zone implementation upgrading processing that can carry out the upgrading processing through unidirectional single pass in the image forming area; When a upgrading processing of this direction of scanning finishes, substrate Z is gone up in conveyance direction D move ormal weight, likewise upgrading is carried out in the next zone of image forming area and handled; Carry out this operation repeatedly, therefrom entire image is formed the zone and implement the upgrading processing.
And, in exposing unit, also can be provided with the scan light department of the Chinese Academy of Sciences (not shown) that laser is scanned, when upgrading is handled, exposing unit is scanned but laser is scanned.
In addition, in exposing unit, about with the Width of the conveyance direction D quadrature of substrate Z, also can be the array type that can shine most laser.
The gas feed unit is when irradiates light, optionally to supply with to use so that the image forming area of substrate Z becomes the device of hydrophilic reacting gas.Through the gas feed unit adjust the reacting gas of substrate Z concentration (loading), supply with sequential etc.Reacting gas for example can use oxygen containing reacting gas or nitrogenous reacting gas.
In addition, as long as composition that can only make film 80 through rayed etc. converts water wettability into, then do not have necessity that the gas feed unit must be set.
Formed pattern is the formation portion of electronic components such as the distribution, thin film transistor (TFT) (below be called TFT) of electronic circuit.
Printing ink for example uses the printing ink of the formation portion of electronic components such as the distribution that constitutes electronic circuit, TFT.In addition, about employed liquid (printing ink) in the formation of each formation portion (gate, semiconductor layer, source/drain) of TFT, Yu Houwen specifies.
In image forming part 18, as long as can form pattern in the image forming area printing-ink of water wettabilityization, then the mode of printing does not have special qualification.The mode of printing for example can be used: the ink-jetting style of screen printing mode, use ink gun.
When using the situation of screen printing mode, prepare to have the silk screen of the image forming area shape peristome corresponding with the image forming area of water wettabilityization, use this silk screen and in the image forming area supply printing ink of water wettabilityization and form pattern.
When the situation of the ink-jetting style that use ink gun, drip pattern data according to the spray of the position of the image forming area that shows water wettabilityization, at the image forming area spray oil dripping ink droplet of water wettabilityization and form pattern.The size of spraying the droplets of ink of dripping from ink gun for example is 10 μ m～100 μ m.
The formation of ink gun can suit to utilize piezoelectric type, thermal etc.And ink gun can use tandem type or full line type.
In addition, when using the situation of ink-jetting style, drip pattern data according to spray and spray the oil dripping ink droplet, the position is dripped in the spray that therefore can easily change droplets of ink through changing this spray pattern data.
When image processing part 20 is the situation of numerical digit exposure machine in exposure portion 16, based on the strain information of substrate Z and make correction exposure pattern data (said correction exposure pattern data is proofreaied and correct the pattern data of the formation position of presentation graphs case).Export this correction exposure pattern data to exposure portion 16,, make the image forming area water wettabilityization through exposure portion 16 according to the correction exposure pattern data.Can make suitable position become water wettability thus.
And; When image forming part 18 is the situation of ink-jetting style; Therefore image processing part 20 drips the position according to the spray that droplets of ink is changed in the change of exposure position, does spray in pairs based on the strain information of substrate Z and drips the correction spray that pattern data proofreaies and correct and drip a pattern data.Should proofread and correct a spray pattern data and export image forming part 18 to, and drip a pattern data according to proofreading and correct spray, the image forming area through image forming part 18 in water wettabilityization forms pattern.Can form pattern in suitable position thus.
And when exposure portion 16 was the situation of silk screen Exposure mode, image processing part 20 made the degree of the strain that location change substrate Z is set of silk screen based on the strain information of substrate Z.Can make suitable position become water wettability thus.
And when image forming part 18 was the situation of screen printing mode, image processing part 20 made the degree of the strain that location change substrate Z is set of silk screen based on the strain information of substrate Z.Can form pattern in suitable position thus.
In addition, the formation device 10 of this example be spool to the spool mode, but be not limited thereto.Form device 10 and for example also can be the supply mode piecewise that substrate Z is pursued piece processing.In being this kind piecewise during the situation of supply mode, under any situation of silk screen Exposure mode, screen printing mode, all can make the degree of the strain that location change substrate Z is set of substrate Z based on the strain information of substrate Z.
In this example, film 80 for example comprises and has the hydrophilic and hydrophobic translation function liquor of scolding of (that is, the variation that produces hydrophilic and hydrophobic owing to ultraviolet light).Form device 10 and can comprise formation alignment mark M on the film 80 of scolding liquor at this kind.For example, circular through alignment mark M is become, can easily be formed on the surperficial 80a that comprises the film 80 of scolding liquor, and also be easy to detect.
Use this alignment mark M, the formation device 10 of this example for example can form a plurality of TFT 60 by such formation in 1 pattern in the region S (with reference to Fig. 2 (b)) shown in Fig. 4 (a).
On substrate Z, form film 80, on this film 80, form TFT 60.Film 80 for example is set as follows: obtain the flatness of regulation in order to form gate 62, and electric insulating quality is improved.
In film 80, utilization forms device 10, and such 4 corners that form the outer edge of region S in pattern form alignment mark M (also not shown in Fig. 4 (a), Fig. 4 (b)) shown in Fig. 2 (b) through the step shown in above-mentioned Fig. 3 (a)～Fig. 3 (c).
In TFT 60, be formed with gate 62 at the surperficial 80a of film 80, be formed with gate insulation layer 82 with the mode that covers this gate 62 and film 80.Be formed with the semiconductor layer 64 of performance in the surperficial 82a of this gate insulation layer 82 as the function of active layer.Open predetermined gap in these semiconductor layer 64 sky and, form source electrode 66a and drain electrode 66b as passage area 68.In addition, form protective seam 84 to cover source electrode 66a with the mode of drain electrode 66b.
In addition, comprise that gate insulation layer 82 and protective seam 84 comprise the situation of scolding liquor identical with film 80, its thickness for example thickness (thickness) with film 80 is identical, is preferably 0.001 μ m～1 μ m, is preferably 0.01 μ m～0.1 μ m especially.
Water wettabilityization carry out in TFT 60 is formed with gate 62 on the surperficial 80a to film 80 through the exposure portion 16 that forms device 10 formation zone, and the formation zone through image forming part 18 in this water wettabilityization forms gate 62.
Thereafter, in the surperficial 82a of gate insulation layer 82, to carry out water wettabilityization in the formation zone that is formed with semiconductor layer 64, the zone through image forming part 18 in this water wettabilityization forms semiconductor layer 64 through the exposure portion 16 that forms device 10.
Secondly,, carry out water wettabilityization with the formation zone of drain electrode 66b, form the source electrode 66a and the 66b that drains in the zone of this water wettabilityization through image forming part 18 to being formed with source electrode 66a through the exposure portion 16 of formation device 10.
Secondly, use other devices, form for example resinous protective seam 84.As for protective seam 84, do not form any element on it, need not as film 80, for example to comprise and have the hydrophilic and hydrophobic translation function liquor of scolding of (that is, the variation that produces hydrophilic and hydrophobic owing to ultraviolet light).
When in forming device 10, forming the situation of TFT 60, use the surperficial 80a of film 80 to go up formed alignment mark M and form gate 62, semiconductor layer 64 and source electrode 66a and drain electrode 66b.
Yet; When because gate insulation layer 82; And can't detect the situation of alignment mark M of surperficial 80a of membranes 80 through test section 14 time; Through mark formation portion 12, at the surperficial 82a of utilization, in forming alignment mark with film 80 identical position or other positions with the formed gate insulation layer 82 of film 80 identical materials.Thus, wait other layers, become and to detect alignment mark M, also can utilize the aligned position of alignment mark even go up formation gate insulation layer 82 in alignment mark M.
In the formation device 10 of this example, in order to form alignment mark M mark formation portion 12 is set, but the present invention is not limited thereto.For example; The formation device 10a of the 2nd example as shown in Figure 5 is such; Printing portion 30 is set between exposure portion 16 and image forming part 18 and replaces mark formation portion 12, and also further configuration detection portion 14 between this printing portion 30 and image forming part 18.In forming device 10a,, can realize the function of mark formation portion 12 through exposure portion 16 and printing portion 30.
In addition, in forming device 10a,, omit its detailed description to attaching with identical symbol with the formation device 10 identical formation things of the 1st example.
The printing portion 30 that forms device 10a comprises the label print portion 28 of the formation device 10 of the 1st example.Therefore, about label print portion 28, omit its detailed description.
In the formation device 10a of this example, go up the exposure indicia patterns in the surperficial 80a of film 80 through exposure portion 16.Secondly, print visual printing ink in the exposure area of indicia patterns, form alignment mark M through the label print portion 28 of printing portion 30.The formation device 10 of this alignment mark M and the 1st example is likewise detected by test section 14, confirms its position, obtains the strain information of substrate Z.The strain information of this substrate Z is used in during pattern forms by image forming part 18.In the formation device 10a of this example, also can likewise form the TFT 60 shown in Fig. 4 (a), Fig. 4 (b) with the formation device 10 of the 1st example.In addition; In the formation device 10a of this example; Even also the formation device 10 with the 1st example likewise also can form alignment mark M at the surperficial 80a that comprises the film 80 of scolding liquor, and be easy to detect, can obtain the effect same with the formation device of the 1st example 10.
In addition; In the formation device 10a of this example; Exposure portion 16 is also used as the mark exposure portion 22 (with reference to Fig. 1) of alignment mark M; During the situation of therefore image forming area that forms pattern being made public at the surperficial 80a of film 80 through exposure portion 16, this moment can be in the indicia patterns of surperficial 80a exposure the becoming alignment mark M of film 80.In this case, under the state of the strain information of no substrate Z, image forming area is made public.
Below, to each formations of TFT 60, gate 62, semiconductor layer 64, and source electrode 66a/ drain electrode 66b, reach that employed material (printing ink) specifies in the manufacturing of each insulation course.
In order to form gate 62, and the conductive material of source electrode 66a/ drain electrode 66b comprise conductive particle, the particle diameter of this conductive particle be preferably 1nm above, below the 100nm.Its reason is: if the particle diameter of conductive particle then is easy to generate the obstruction of ozzle greater than 100nm, utilize the ejection of ink-jet method to become difficulty.And if the not enough 1nm of the particle diameter of conductive particle, then the smears becomes big with respect to the volume ratio of conductive particle, and the organic ratio in the film of gained becomes too much.
Dispersed substance concentration is more than the 1wt%, below the 80wt%, can adjusts according to the thickness of desired conducting film.If dispersed substance concentration surpasses 80wt%, then becoming is easy to generate cohesion, is difficult to obtain the film of homogeneous.
The surface tension of the dispersion liquid of conductive particle preferably gets into the scope that 20mN/m is above, 70mN/m is following.Its reason is: when spraying liquid in utilizing ink-jet method, if the not enough 20mN/m of surface tension, then ink component increases with respect to the wetting state of ozzle face, and therefore becoming, it is crooked to be easy to generate flight; If surpass 70mN/m, then unstable in the shape of the meniscus of ozzle front end, so spray volume, ejection time sequence control become difficulty.
The viscosity of dispersion liquid is preferably more than the 1mPas, below the 50mPas.Its reason is: when spraying in utilizing ink-jet method; When viscosity during less than the situation of 1mPas; The ozzle periphery becomes easily owing to the outflow of printing ink is polluted, and when viscosity during greater than the situation of 50mPas, makes the change of drop ejection smoothly difficult in the obstruction frequency gets higher in ozzle hole.
Conductive material for example is the conductive material that comprises fine silver particle.Other metal microparticle gold for example capable of using, platinum beyond the silver, copper, palladium, rhodium, osmium, ruthenium, iridium, iron, tin, zinc, cobalt, nickel, chromium, titanium, tantalum, tungsten, indium any a kind, any alloy that combines more than 2 kinds perhaps also capable of using.Wherein preferred Nano silver grain.Except that metal microparticle, also can use the particulate of electric conductive polymer or superconductor etc.
For example can enumerate organic solvents such as xylene, toluene or citric acid etc. at the coating material that the electrically conductive microparticle sub-surface was coated with.
Employed dispersion medium is so long as can disperse the dispersion medium of above-mentioned conductive particle; Thereby the dispersion medium that does not produce cohesion does not then have special qualification; Except water; Can enumerate alcohols such as methyl alcohol, ethanol, propyl alcohol, butanols; Hydrocarbon compounds such as normal heptane, normal octane, decane, toluene, xylene, cymene, durene, indenes, bipentene, tetralin, decahydronaphthalenes, cyclohexyl benzene; Perhaps glycol dimethyl ether, ethylene glycol diethyl ether, Ethylene Glycol Methyl ethylether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol methyl ethyl ether, 1; Ether compounds such as 2-dimethoxy-ethane, two (2-methoxy ethyl) ether, Dui diox, and propylene carbonate, gamma-butyrolacton, N-N-methyl-2-2-pyrrolidone N-, dimethyl formamide, dimethyl sulfoxide (DMSO), cyclohexanone isopolarity compound.In those dispersion medium; From the stability of atomic dispersiveness and dispersion liquid and the aspect that is applicable to the easy property in the ink-jet method; Be preferably water, alcohols, hydrocarbon compound, ether compound, preferred dispersion medium can be enumerated water, hydrocarbon compound.Those dispersion medium can use separately, perhaps also can be made into the potpourri more than 2 kinds and use.
And bonding agent can use a kind of following bonding agent or combination more than 2 kinds used: the multipolymer of alkyd resin, modified alkyd resin, modified epoxy, ammonia esterised oil, urethane resin, abietic resin, rosin carburetion, maleic acid resin, maleic anhydride resin, polybutene resin, diallyl phthalate resin, vibrin, polyester oligomers, mineral oil, vegetable oil, ammonia oligomer ester, (methyl) allyl ether and maleic anhydride (this multipolymer also can add other monomer (for example styrene etc.) as copolymer composition) etc.And, in metal paste of the present invention, also can suit to select to add spreading agent, wetting agent, thickening agent, levelling agent, scum silica frost suppressant, jelling agent, silicone oil, organic siliconresin, foam-breaking agent, plastifier etc. as adjuvant.
And conductive material also can use the electric conductivity organic material, for example also can contain high score subclass soluble materials such as polyaniline, polythiophene, polyphenylacetylene.
Also can comprise organometallics and replace metal microparticle.So-called here organometallics be meant can be owing to heating and decomposition the compound of precipitating metal.This kind organometallics has: chlorine (triethyl phosphine) gold, chlorine (trimethyl-phosphine) gold, chlorine (triphenylphosphine) gold, diacetone are silver-colored, the silver-colored misfit thing of trimethyl-phosphine (hexafluoroacetylacetone), hexafluoroacetylacetone cyclo-octadiene copper misfit thing etc.
As for the semiconductor material in order to formation semiconductor layer 64, the viscosity of dispersion liquid is preferably more than the 1mPas, below the 50mPas.When spraying in utilizing ink-jet method, when the situation of the not enough 1mPas of viscosity, the ozzle periphery is easily owing to the outflow of printing ink is polluted; And, if viscosity surpasses 50mPas, then make drop ejection smoothly become difficulty in the obstruction frequency gets higher in ozzle hole.
Conductor layer in order to constitute semiconductor layer 64 can use inorganic semiconductors such as CdSe, CdTe, GaAs, InP, Si, Ge, CNT, silicon, ZnO; Organic low moleculars such as pentacene, anthracene, aphthacene, phthalocyanine; Polyacetylene class electroconductive polymer; Gather polyphenyl class electroconductive polymers such as benzene and derivant, polyphenylacetylene and derivants thereof; Polypyrrole and derivant thereof, polythiophene and derivant thereof, gather heterocyclic electroconductive polymers such as furans and derivant thereof, organic semiconductors such as polyaniline and derivant isoiony electroconductive polymer thereof.
Usually use high boiling organic solvent in the semi-conductive coating.For example use toluene, m-xylene, P-xylene, tetralin, ethoxybenzene, 1,3 usually, 5-trimethylbenzene, 1,5-dimethyltetralin, 4-methylbenzene methyl ether, 1-methylnaphthalene, 1,2-dichloro-benzenes etc.
In addition, as not making gate insulation layer 82, can use following material for the situation of the same composition of film 80 or constitute the big material of electric insulating quality of the interlayer dielectric as protective seam 84.Particularly; Organic material can be enumerated polyimide, polyamidoimide, epoxy resin, silsesquioxane, tygon phenol, polycarbonate, fluorine-type resin, Parylene, tygon butyraldehyde etc., and tygon phenol or polyvinyl alcohol (PVA) also can utilize the proper crosslinking agent to carry out crosslinked and use.Can enumerate to gather and fluoridize xylene, fluorinated polyimide, fluoridize the polyene propyl ether, teflon, polychlorotrifluoroethylene, gather (α; α; α '; α '-tetrafluoro-P-xylene), gather (ethylene/tetrafluoroethylene), gather various macromolecule, the polyolefins macromolecules fluoridized of (ethene/CTFE), ethylene fluoride/propylene copolymer; And polystyrene, gather (AMS), gather (α-vinyl naphthalene), polyvinyl toluene, polybutadiene, polyisoprene, gather (4-methyl-1-pentene), gather (2-methyl isophthalic acid; The 3-butadiene), Parylene, gather [1,1-(2-methylpropane) two (4-phenyl) carbonic ester], polycyclohexyl methacrylate, polychlorostyrene, gather (2,6-dimethyl-1; 4-stretches phenyl ether), polyvinyl eyclohexane, gather propine ether, polyphenyl, polystyrene-altogether-AMS, ethylene/ethyl acrylate multipolymer, gather (phenylethylene/butadiene), gather (styrene/2,4-dimethyl styrene) etc.
Porous insulating film can be recited in porous insulating films such as the phosphosilicate glass that has added phosphorus in the silicon dioxide, the boron phosphorus silicate glass that in silicon dioxide, has added phosphorus and boron, polyimide, polyacrylic acid.And, can form the porous insulating film that porous matter methyl silsesquioxane, porous matter hydrogen silsesquioxane, porous matter methyl hydrogen silsesquioxane etc. have silicon oxygen bond.
The present invention constitutes basically as described above.More than, pattern apparatus for converting of the present invention and pattern formation method are specified, but the present invention is not limited to above-mentioned example, certainly in the scope that does not break away from purport of the present invention, carry out various improvement or change.
Claims (8)
1. pattern apparatus for converting, it is the pattern apparatus for converting that on substrate, forms predetermined pattern, it is characterized in that comprising:
Mark exposure portion makes public and to become the indicia patterns of alignment mark for the formed film of scolding liquor that comprises on the said substrate; And
Visual printing ink prints in the exposure area of said indicia patterns in label print portion, forms said alignment mark.
2. pattern apparatus for converting according to claim 1 is characterized in that also comprising:
Marker detection portion is detected printing the said alignment mark that said visual printing ink forms, and obtains the positional information of said alignment mark;
The adjustment part, based on the positional information of said alignment mark, the position that changes formed pattern on the said film perhaps changes the position of said substrate, thus adjustment forms the position of said pattern; And
Image forming part forms pattern on the said film of said substrate.
3. pattern apparatus for converting according to claim 2 is characterized in that,
Said image forming part comprises to be made pattern form the zone to become hydrophilic exposure portion and form the Printing Department that print in the zone becoming hydrophilic said pattern in the said film.
4. according to each described pattern apparatus for converting in the claim 1 to 3, it is characterized in that,
Said visual printing ink is the printing ink of the light of absorption or the wavelength that reflects the hydrophilic and hydrophobic variation that does not make said film.
5. pattern apparatus for converting according to claim 4 is characterized in that,
Said visual printing ink is water-based ink or metal ink.
6. pattern formation method, it is the pattern formation method that on substrate, forms predetermined pattern, it is characterized in that comprising:
For formed the make public step of the indicia patterns that to become alignment mark of the film of scolding liquor that comprises on the said substrate; And
Print visual printing ink in the exposure area of said indicia patterns, form the step of said alignment mark.
7. pattern formation method according to claim 6 is characterized in that also comprising:
Detect printing the said alignment mark that said visual printing ink forms, obtain the step of the positional information of said alignment mark;
Based on the positional information of said alignment mark, the position that changes formed pattern on the said film perhaps changes the position of said substrate, thereby adjustment forms the step of the position of said pattern; And
On the said film of said substrate, form the step of pattern.
8. according to claim 6 or 7 described pattern formation methods, it is characterized in that,
The step that on said film, forms pattern comprises that the pattern that makes in the said film forms the zone and becomes hydrophilic step and form the step that print in the zone becoming hydrophilic said pattern.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011-077923 | 2011-03-31 | ||
| JP2011077923A JP2012210594A (en) | 2011-03-31 | 2011-03-31 | Pattern forming device and pattern forming method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102736437A true CN102736437A (en) | 2012-10-17 |
Family
ID=46992161
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012100446831A Pending CN102736437A (en) | 2011-03-31 | 2012-02-24 | Pattern formation apparatus and pattern formation method |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2012210594A (en) |
| KR (1) | KR20120112005A (en) |
| CN (1) | CN102736437A (en) |
| TW (1) | TW201239518A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014067148A1 (en) * | 2012-11-03 | 2014-05-08 | Feng Lin | Method and apparatus for post-printing processing of post-printing transfer or composite sheet cutting |
| US8981615B2 (en) | 2012-10-19 | 2015-03-17 | Industrial Technology Research Institute | Wound stator core |
| CN117492336A (en) * | 2024-01-02 | 2024-02-02 | 天府兴隆湖实验室 | Alignment mark and pattern alignment method |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6287121B2 (en) * | 2013-11-28 | 2018-03-07 | 株式会社リコー | Electro-mechanical conversion film manufacturing method, electro-mechanical conversion element, liquid discharge head, ink jet recording apparatus |
| JP6942654B2 (en) * | 2018-02-23 | 2021-09-29 | 株式会社Ｓｃｒｅｅｎホールディングス | Coating equipment and coating method |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4244686B2 (en) * | 2003-04-18 | 2009-03-25 | セイコーエプソン株式会社 | Pattern formation method |
| JP2005093799A (en) * | 2003-09-18 | 2005-04-07 | Seiko Epson Corp | Method of forming thin film pattern, electrooptic device, and electronic equipment |
| JP4161964B2 (en) * | 2004-03-09 | 2008-10-08 | セイコーエプソン株式会社 | PATTERN FORMING METHOD, PATTERN FORMING SYSTEM, AND ELECTRONIC DEVICE |
-
2011
- 2011-03-31 JP JP2011077923A patent/JP2012210594A/en not_active Abandoned
-
2012
- 2012-02-23 TW TW101106040A patent/TW201239518A/en unknown
- 2012-02-24 CN CN2012100446831A patent/CN102736437A/en active Pending
- 2012-02-28 KR KR1020120020179A patent/KR20120112005A/en not_active Application Discontinuation
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8981615B2 (en) | 2012-10-19 | 2015-03-17 | Industrial Technology Research Institute | Wound stator core |
| WO2014067148A1 (en) * | 2012-11-03 | 2014-05-08 | Feng Lin | Method and apparatus for post-printing processing of post-printing transfer or composite sheet cutting |
| CN103958212A (en) * | 2012-11-03 | 2014-07-30 | 冯林 | Method and apparatus for post-printing processing of post-printing transfer or composite sheet cutting |
| CN117492336A (en) * | 2024-01-02 | 2024-02-02 | 天府兴隆湖实验室 | Alignment mark and pattern alignment method |
| CN117492336B (en) * | 2024-01-02 | 2024-04-09 | 天府兴隆湖实验室 | Alignment mark and pattern alignment method |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20120112005A (en) | 2012-10-11 |
| TW201239518A (en) | 2012-10-01 |
| JP2012210594A (en) | 2012-11-01 |
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