TW201239518A - Pattern formation apparatus and pattern formation method - Google Patents

Abstract

A pattern forming apparatus and a method for forming a pattern are provided, which are capable of forming an alignment mark on a film containing a liquid-repellent. A pattern forming apparatus for forming a predetermined pattern on a substrate includes: a mark exposure unit which exposes the film containing a liquid-repellent formed on the substrate to light to form a mark pattern which becomes an alignment mark; a mark printing unit which prints a visualization ink on the exposure area of the mark pattern to form the alignment mark, and further includes: a mark detecting unit which detects the alignment mark to obtain a position information of the alignment mark; an adjusting unit which changes the position of the pattern formed on the film or the position of the substrate according to the position information of the alignment mark so as to adjust the position on which a pattern is formed; and an image forming unit which forms a pattern on the film.

Description

201239518 wuu/pif VI. Description of the invention: [Technical field to which the invention pertains] = A good alignment mark and pattern formation method are formed on the film of the liquid repellent. [Prior Art] In recent years, the wiring of electronic circuits and the technique of forming an electric wiring pattern on a substrate have attracted attention. In the micro X brother: a liquid ejecting head (inkjet head) such as an ink jet method. A pattern of the metal particles or the resin particles is diffused by the droplets of the Erlo' inkjet head, and the pattern is formed by hardening it by adding the galvanized coatings to form electric wiring patterns. The liquid crystal: film ' can also be formed into a fine pattern such as an electric wiring pattern on the above electronic circuit on a flexible substrate (support) such as PET or qing. Proud work ❿ In order to form the wiring of the electronic circuit as described above, etc., it is necessary to: Γ 成 成 成 aligning with the alignment mark, τ or (4) ίίΙίί), the transparency is high, as described above (d) a method of forming a de-marking on a wire-wound plate, for example, in the day

Japanese Laid-Open Patent Publication No. 201-260 proposes a method of forming an L-secondary order (corresponding to an alignment mark) on a glass. In Japanese Patent Laid-Open No. Hei-1, it is formed on glass by using t-rays. A method of forming an alignment mark on a substrate having a high transparency such as a PEN or the like. In addition to the above-mentioned Japanese Patent Laid-Open Publication No. 2G111, a method of forming a alignment agent using a thermal transfer printer is described in the method of 201239518 HUUU/pif. A method of forming an alignment mark, a substrate having a high transparency such as a square PET or a PEN in which a through-hole is drilled on a substrate to form an alignment mark, and it is difficult to form an alignment mark using a laser. γ Using a thermal transfer printer, patterning is performed with the accuracy of the formation method of the alignment mark. In addition, in the case of using direct sunlight (10), it is necessary to provide a special layer on the substrate, and in the method of storing the through hole ( Punching "square === hole, so there are the following problems: alignment mark ^ ς plate ^ dust is generated during drilling, etc. μ is low, and [invention] The problem in the prior art for repelling Point 'lifting device and pattern forming method The pattern of the alignment mark is formed in order to achieve the above object 'the shape of the present invention; == base = coffee case 2; Figure = _ agent film ink exposure "shape = face: mark pattern of the exposed area printed visual oil Cheng Qing's paste visualizes the ink; the position of the position mark marked by the adjustment part is in play, changing the position of the pattern formed on the film 201239518 πυυυ/pif or changing the position of the substrate, thereby adjusting the formation a position of the pattern; and an image forming portion that forms a pattern on the film of the substrate. In this case, preferably, the image forming portion includes the pattern forming region in the film to be hydrophilic The exposed portion and the printing portion that prints in the hydrophilic pattern forming region. For example, the film is a film having a hydrophilic/hydrophobic conversion function (that is, a change in hydrophilicity and hydrophobicity due to light of a predetermined wavelength). The visual ink is an ink that absorbs or reflects light of a wavelength that does not change the hydrophilicity of the film. In this case, the visual ink may be, for example, a water-soluble ink or According to a second aspect of the present invention, there is provided a pattern forming method, wherein a pattern forming method for forming a predetermined pattern on a substrate is characterized in that: a film containing a liquid repellent formed on the substrate is exposed a step of forming a mark of the alignment mark; and a step of printing the visible ink in the exposed area of the mark to form the alignment mark. Preferably, the method further comprises: printing the visible ink The step of performing the detection, the domain obtaining the de-labeling (4) private step; changing the position formed on the film or changing the position of the base (4) based on the position information of the alignment mark, thereby adjusting the formation And the step of printing the pattern forming region of the 201239518 4UUU7pif water-based pattern formed on the film of the substrate. [Effects of the Invention] According to the present invention, it is possible to form a good alignment mark on a film containing a liquid repellent. Thereby, an alignment mark can be used to form a prescribed pattern on the substrate with high precision. [Embodiment] Hereinafter, a pattern forming apparatus and a pattern forming method of the present invention will be described in detail based on preferred embodiments shown in the drawings. Fig. 1 is a schematic view showing a pattern forming apparatus according to a first embodiment of the present invention. Fig. 2 (a) is a schematic cross-sectional view showing a substrate used in the pattern forming apparatus according to the first embodiment of the present invention, and Fig. 2 (b) is a view showing the pattern forming apparatus according to the first embodiment of the present invention. A schematic representation of the substrate used. The pattern forming apparatus 10 (hereinafter simply referred to as the forming apparatus 10) shown in Fig. 1 is, for example, a reel-to-reel type which performs various processes for transporting the substrate Z in the longitudinal direction. The forming apparatus 1A includes a mark forming portion 12, a detecting portion 14, an exposure portion 16, an image forming portion 18, and an image processing portion 2A. In the forming apparatus, the substrate Z is wound around the rotary shaft 40 and mounted in a wheel shape. The rotary vehicle 40 is a device for continuously feeding the substrate z, and a motor (not shown) is connected to the rotary shaft 40, for example. The substrate z is continuously fed in the transport direction D by the motor. Further, a winding shaft 42 that winds the substrate Z that has passed through the mark forming portion 12, the detecting portion 14, the exposure 201239518-twv/pix light portion 16, and the image forming portion 18 is provided. For example, a motor (not shown) is connected to the winding shaft 42. The winding shaft 42 is rotated by the motor. The substrate z is wound around the winding shaft 42 to have a roll shape. Thereby, the substrate z is transported in the transport direction D. In the present embodiment, the substrate Z is a substrate on which a film 8 is formed on the substrate Z as shown in Fig. 2(a). The membrane 8〇 contains a liquid repellent. The repellency agent is a compound having a hydrophilic-hydrophobic conversion function (i.e., a change in hydrophilicity and hydrophobicity by light of a predetermined wavelength such as ultraviolet light). That is, the membrane 8 has a hydrophilic-hydrophobic conversion. Hereinafter, the film 8 of the substrate z and the liquid repellent constituting the film 80 will be specifically described. Since the forming apparatus 1 of the present embodiment is a reel-to-reel method, a resin film is used as the substrate z from the viewpoint of productivity and flexibility. The resin is not particularly limited, and the (four), the impurity, the structure, the thickness, and the like can be appropriately selected from known materials, shapes, structures, thicknesses, and the like. Further, examples of the resin film include polyethylene terephthalate (ρΕτ), naphthalene diacetate, ethylene diacrylate, and polystyrene resin film, 树脂*ΡΕ) resin film, and polypropylene. Polyolefin resin film such as dilute (ρρ) resin film, polystyrene film, or cycloolefin resin, polyethylene resin film such as polystyrene, 匕 = vinylidene chloride, polyetheretherketone (ΡΕΕΚ) April /Special f, polysulfone (pSF) resin film, polyethersulfone (PES) resin thin film (Pc) resin thin film, polyamide resin film, polyfluorene 曰 station film, acrylic resin film, triacetic acid Cellulose (TAC) tree 201239518 40007pif A thin film transistor (TFT) is produced by using a forming device, and when it is used for a purpose such as ", employee benefit, etc., the substrate Z is preferably a transparent resin film j /, if The resin film having a light transmittance of a wavelength of the visible region of 8 〇% or more may be used. Among them, from the aspects of transparency, heat resistance, ease of handling, strength, and cost, it is preferably a biaxially-oriented polyethylene terephthalate thin) axis L-stranded naphthalate film, polyether. The stone wind film and the polycarbonate film are more preferably a biaxially stretched polyethylene terephthalate film or a biaxially stretched polyethylene naphthalate film. In addition, the forming apparatus 10 may be a sheet-by-sheet supply method as described later. In the case of 14 types of substrates, various substrates such as Si wafers, quartz glass, and «metal plates may be used as long as they are available on the substrate. Surface area 2 without a substrate such as a metal film, a dielectric film, or an organic film,

Rn a and Γ' will be described as specific examples of the liquid repellent constituting the film 80. As described in the film Ah, as a hydrophilic-hydrophobic conversion functional material, a membrane containing a liquid-repellent agent is widely used. The thickness (film thickness) of the film 80 is preferably preferably 1 to 0 μm to 0. In the liquid repellency agent of the first embodiment, the contact angle with the coating liquid is preferably 5 Å in the liquid repellency region of the second or second liquid which is not irradiated with energy. More preferably, the upper eight is 90. the above. In the liquid repellency agent, the contact angle with the coating liquid in the region where the energy is irradiated is preferably 40. It is ', more preferably 20. Hereinafter, it is especially preferable that it is 1 inch. the following. Further, the difference in wettability between the liquid-repellent region and the lyophilic region is preferably 1 〇 mN/m or more in the table 201239518 wuu /pif surface tension meter. In the liquid-repellent agent's domain material, brittle titanium oxide (Ti〇2), & zinc (ZnO), tin oxide (Sn〇2), acid acid, :匕嫣(w〇3), oxidation (5) 2〇3), and iron oxide, oxide: y Select one or more of these oxides so that, for example, as long as the titanium oxide is present, there are sharp-min and rutile types. Any species, but preferably anatase titanium dioxide. 'A high-key bond that can be decomposed by photoexcitation of the main bone oxide in a liquid-repellent shot-bonding ship, so as to have a function of changing wettability due to the action of an oxide. ^剂== The main skeleton of the agent has the above-mentioned bond energy which is not due to the second solution of the knife solution, and has a bond which is excited by the action of the oxide, for example, by a sol-gel reaction; : Hydrolysis, shrinkage (4) to play A_ degree c. Or the reactivity of the oil-repellent property is excellent, and the organic anti-shore is determined such that the monomethyl oxime is not cross-linked to the organic stone compound and the organic poly-stone is mixed with the second two. ΐ: ΐΠΓ contains the ability to illuminate when energy is applied. Such a decomposing substance may be exemplified by a function of decomposing due to the action of an oxide, and also because the decomposing agent contains a change in wettability of the surface of the layer. 201239518 40007pif Specifically, a fluorine-based or anthrone-based nonionic interface W can be cited, and a cationic surfactant or an anionic surfactant: an amphoteric surfactant can also be used. In addition to the surfactant, it can also be listed as ethyl alcohol, unsaturated polyester, acrylic resin, polyethylene, poly(phthalic acid), ethylene propylene vinegar, EPDM (her jia: propyl: bribe) , epoxy resin, _ fat, polyamine brewing, melamine resin, polycarbonate, polyethylene, polyamine, polyimine, styrene rubber, gas butadiene rubber, poly _, polybutan, poly Styrene, ethyl acetate, vinegar, nylon, poly, polybutadiene, polybenzazole, polynitrile, poly-form, weiwei, (4) pentane filament, polymer, etc. In addition to the lyophilic compounds, there are diazonium salts, dredging, mothium salts, etc., HM shaws, and sensitizers. Amine sulphate compound, fatty acid ester compound, α__ acid vinegar compound, diazide naphthalene iced acid vinegar compound, diazo two stone compound, two stone compound, spray compound, o-nitro group Self-designed compound, oxyalkylene suture, _ decylamine compound, benzamidine methyl vinegar compound, 2, 'dinitro hydrazine vinegar, 2-heavy rat-1,3_dione compound, benzene compound , Orthogonal Schiff base phenyl age compound, 2,5-cyclohexadiene compound, continuous polyfluorite and the like. 7 soil 虱 虱 本 , , 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲 亲Polymer-based polymer material 11 201239518 40007pif material. The polyimine or a compound having a side bond having a hydrophobic group directly on the main chain having a skeleton such as (meth) acrylate or via a bonding group may be mentioned. Examples of the hydrophobic group include a group having a terminal structure of _CF2CH3, _CF2CF3, -CF(CF3)2, -C(CF3)3, -CF2H, -CFH2, and the like. In order to make the molecules = easy to align with each other, a group having a long carbon chain length is preferable, and a group having a stone inverse of 4 or more is more preferable. Further, a polyfluoroalkyl group in which two or more hydrogen atoms of the alkyl group are substituted with a fluorine atom is preferable, and an Rf group having a carbon number of 4 to 20 is particularly preferable, and a polyfluoroalkyl group having a carbon number of 6 to 12 is particularly preferable. There are a linear structure or a branched structure in the polyfluoroalkyl group, and a linear structure is preferred. Further, the hydrophobic group is preferably a wholly-IL alkyl group in which substantially all hydrogen atoms of the alkyl group are substituted by fluorine atoms. The perfluoroalkyl group is preferably a group represented by CnF2n+1- (wherein n is an integer of 4 to 16), and particularly preferably a group in which η is an integer of 6 to 12. The perfluoroalkyl group may be a linear structure or a branched structure, and is preferably a linear structure. Further, the 'hydrophobic group' may include a terminal structure having a terminal structure such as •CHWH3, -CH(CH3)2, or -C(CH3)3 which does not contain a fluorine atom. In this case, in order to facilitate the alignment of the molecular chains with each other, a group having a longer carbon chain length is preferable, and a group having a carbon number of 4 or more is more preferable. The hydrophobic group may be a linear structure or a branched structure, and is preferably a linear structure. The above alkyl group may also contain a phenyl group substituted with a halogen atom, a cyano group, a phenyl group, a hydroxyl group, a carboxyl group or a linear, branched or cyclic alkyl group or an alkoxy group having a carbon number of -12. The polymer material having a hydrophobic group in the side chain may, for example, be a polymer material containing polyimine. The solvent used in the present embodiment may, for example, be ethanol, methanol or propanol.

12 201239518 40007pif and other alcohol solvents, n-n-alcohol, diethylene glycol and other n-volume agents, 2-methoxy E-Sf, 2 · ethoxyethanol, 2 - butoxyethanol and other cellosolve solvents . The mark forming portion η is formed on the film 80 having the above-described hydrophilic/hydrophobic conversion function, for example, as shown in FIG. 2(b) on the film 8 of the substrate ,, on the outer edge of the rectangular pattern forming region S. The four corners are formed with an alignment mark (marker pattern). The τ mark forming portion 12 includes the mark exposure portion 22 and the mark printing portion 28, and the mark exposure portion 22 is provided on the upstream side in the conveyance direction D. The mark exposure unit 22 includes a light source 24 and a mask 26 in which an opening of a predetermined mark pattern is formed. The light source 24 is a light source that can illuminate the film 80 with light of a wavelength that can change from liquid repellency to hydrophilicity. The light having a wavelength which is changeable from the liquid repellency to the hydrophilicity varies depending on the composition of the film 80, and for example, light which can irradiate an ultraviolet region having a wavelength of 300 (nm), 365 (mn), 405 (nm) or the like is used. Light source. The mask 26 is formed with, for example, an annular opening. Thereby, the film (10) is subjected to annular exposure. The shape of the opening of the mask 26 is the shape (marker pattern) of the alignment mark m. In the mark exposure portion 22, in order to adhere the mask 26 to the surface 8〇a (see FIG. 2, (4)) of the film 80 of the substrate Z during exposure, it is provided to be in contact with or away from the substrate z; (not shown). The mark printing unit 28 is an exposure area in which the mark pattern to be the alignment mark M is exposed. In the present embodiment, the visualized ink is printed in the ring-shaped exposure area, and the alignment ink is printed to form an alignment. A device that marks M. Further, the mark printing unit 28 does not particularly limit the printing method as long as it can supply the visible ink to the exposed region where the mark pattern is exposed. For example, inkjet, screen printing, letterpress printing, gravure printing can be used. Further, in the case of performing overall printing so as to cover the entire area of the exposure region of the mark pattern, a coarse alignment accuracy of about ±2 mm can be used. The visualizing ink used in the marking printing portion 28 to form the alignment mark M may be used to absorb or reflect the film (10) in order to prevent unwanted hydrophobic-hydrophobic conversion on the film 8〇 when detecting the alignment mark Μ. The pro-hydrophobicity produces an ink of varying wavelengths of light. Therefore, the visible ink is suitably selected depending on the wavelength at which the film 8〇 produces a hydrophilic-hydrophobic conversion, for example, an ink that reflects or absorbs light having a wavelength of 500 nm or more. Further, the visual ink may be, for example, a water-soluble ink or a metal ink. Hereinafter, the visual ink used to form the alignment mark 具体 will be specifically described. The visual ink (marking material) used to form the alignment mark 可使 can use an ink containing a dye or a pigment. The pigment may be an organic pigment containing a poorly soluble pigment, or a lake pigment in which an organic pigment and a polyvalent metal ion are bonded. #, and the organic dye portion may, for example, be an azo dye, a wake dye, or a phthalocyanine dye. For example, the maximum absorption wavelength (mole absorption coefficient) of the sodium salt (the phthalocyanine dye. Lionol Blue GS) in which three sulfonic acids are substituted in copper phthalocyanine is 639 11111 & 66 〇 11111 (35000). The dye contains a water-soluble dye or an oil-soluble dye, and the water-soluble dye is often used as a water-soluble dye having a hydrophilic group such as a sulfonic acid group or a carboxylic acid group in the dye molecule. The basic skeleton of the molecular structure of the dye is azo dye, 蒽 201239518 40007pif awake dye, phthalocyanine dye, cyanine dye, oxonium dye, styryl dye, triaryl decane dye, and the like. The cyanine dye and the oxonium dye have a large absorption coefficient, so that the visibility is high even at a low concentration. Therefore, it is preferred to use a water-soluble ink (water-soluble dye) for visualizing inks. Such a dye is, for example, dyes 1 to 4 represented by the following Chemical Formulas 1 to 4; These dyes are soluble in water, and the maximum absorption wavelength (mole absorption coefficient) of each dye is as follows. Each of the dyes 1 to 4 (chemical formula 1 to chemical formula 4) has an absorption intensity of about 50% of the absorption peak even at 25 nm before and after the absorption maximum wavelength. Dye 1 (Chemical Formula 1): 552 nm (65000) Dye 2 (Chemical Formula 2): 644 nm (104000) Dye 3 (Chemical Formula 3): 550 nm (63000) Dye 4 (Chemical Formula 4): 747 nm (260000) 1]

0 CH3-CH2-. -C

0

II C-0——CH2-CH3 Total: 2506 Molecular formula: C27H24N4 012S2.2K1 15 201239518 4UUU7pif Molecular weight: 699.753 [Chemical 2]

Total: 53538 Molecular formula: C29 H26 N4 018 S4.4K1 Molecular weight: 885.923 [Chemical 3] HSC2—0—OC C0—0-C2H5

Total: 20673 201239518 4UUU7pif Molecular formula: C19H24N4 012S2.2K1 Molecular weight: 603.665 [Chemical 4]

Total number: 36389 Molecular formula. C35 H44 N2 012 S4.3K1 Molecular weight: 852.117 As for the mark forming portion 12 of the present embodiment, for example, as shown in FIG. 3(a), the alignment mark river is formed on the surface of the film 80. t' causes the mask 26 of the mark exposure unit 22 and the film 8 of the substrate Z to be degraded/source 22, and the liquid repellency can be made 8 〇 as shown in Fig. 3 (4), and the surface 80a of the film is aligned. ;b ^ Get hi a early 5 形成 formation area 100 for circular exposure, exposure area 1 〇 2. In addition, the pattern exposure area 1 〇 2 ^ exposure area 104 is still liquid repellency. "Person transports the substrate in the transport direction 13, for example, ® 3(b) 17 201239518 tww/plf as shown by 'marking the 28 parts of the printing unit to water-soluble commercial ink 11G=domain 1 (32 The alignment mark forming area of the entire surface plate is formed on the surface of the film. The body is printed on the film 80. The pattern is exposed to the image, and the ink is visually attracted to each other. The hydrophilicity is shown on the surface of the film 8 as shown in (c) of FIG. The 8 ^ open ^ area has just formed the alignment mark M. At this time, 100 μm is formed into the region (10), and the non-exposed region is repelled in the H-marked ink, which is not formed, and no mark is formed. = The alignment mark shown is, for example, an outer diameter of lmm:= The area (the pattern of the alignment mark f&M) is hydrophilic, but is not limited thereto. For example, it can also be ^

When the light pattern is reversed and the hydrophilic region is opposite to the liquid-repellent region, the alignment mark Μ is repelled as shown in (4), and the alignment ink is printed. An area other than this is printed with a visual ink to form an alignment mark Μ. In the present embodiment, the shape of the alignment mark 并不 is not limited to the annular shape. For example, it may have a circular shape as shown in (4) of FIG. 3, or may have a quadrangular shape as shown in FIG. 3(7), or may be a matrix as shown in FIG. 3(g), or may be The sample (h) of Fig. 3 has a right-angled triangular shape, and may have a right-angled triangular shape as shown in Fig. 3 (1). Further, in the case of the miscellaneous exposed d-zone towel, the visualized inks are attracted to each other to form an alignment mark, and therefore a shape having a narrow area is preferable.

18 201239518 40007pif is preferably in the shape of a thin annular shape. In the alignment mark of the form shown in (e) to (3) of FIG. 3 described above, the exposure® mosquito can be rotated, and the region to be the alignment mark is made liquid-repellent as in the case of (4) of FIG. 3 . Thereby an alignment mark is formed. The detecting unit Μ is a device that detects the alignment mark M and obtains a positional message of the alignment mark M, and the detecting unit 14 is connected to the image processing unit. The detecting unit 14 includes a strain sensor (not shown) and a position alignment detecting unit (not shown). And the sensation of 疋 ( ( 四 四 四 四 四 四 四 四 四 四 8 四 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 检测 检测 检测 检测 检测 检测 检测 检测 检测 检测Sensor. In the case where the visualizing ink is a visible ink that reflects or absorbs light having a wavelength of 500 mn or more, a light source that can illuminate light having a wavelength of 500 nm or more is used as the light source. Specifically, the wavelength of the light source can be, for example, 633 coffee, 66 〇 11111, 59 〇 11111, infrared (111). In the "worry sensor", the light having a wavelength of 5 〇〇 nm or more is irradiated on the alignment mark M, and the outer edge portion of the pattern forming region s indicated by (b) of gj 2 is f-f/kg in advance. The set alignment mark μ is imaged to obtain, for example, image data of four alignments 'am. The image data of the four alignment marks 轮 is taken as a -stage' to the position alignment detecting portion. The a position alignment detecting portion is based on the respective alignment centers obtained in the strain sensor. The image data of the image data is calculated by, for example, comparing the position of each alignment mark μ, the size and orientation of the alignment mark, and the distance between the alignment marks, and the like, and comparing with the design values of the size and arrangement position of the alignment mark 等. Thus, 19 201239518 -TV/V7V/ is used as the device for the strain message of the substrate z (alignment position information of the mark M). The strain information of the substrate Z is, for example, the direction in which the substrate z is stretched and the amount of expansion and contraction of the substrate Z. The strain information of the substrate Z is specifically the expansion and contraction direction of the ugly formation region S surrounded by the four alignment marks 、, the amount of expansion and contraction, the rotation direction of the pattern formation region S, the amount of rotation, and the predetermined size of the deviation pattern formation region S. The amount of expansion or reduction, and the amount of deformation of the ladder shape. The strain information of the substrate is output to the image processing unit 2A. Further, in the image processing unit 20, the correction data for the substrate 曝光 exposure and the correction data for the droplets are used. There is no special way to make the simple image of the text center, and the strain sensor is moved two-dimensionally, and the surface of the surface is imaged, and the image is moved while facing the alignment mark of the substrate 2. The exposure unit 16 is a film 8 that is formed on the substrate Z, and the image forming region of the image is changed to hydrophilic by the modification process. The core f portion 18 is formed with a saponin (not shown) and is provided in the gas supply unit 16 to be connected to the image processing unit 2A. , clothing map does not). The exposure unit 16 is light (exposure). In the exposure unit, the light source=== 201239518 4UU07pif The light source having the same wavelength of the light source 24 of the portion 22 is, for example, a light source that can irradiate light of an ultraviolet region such as wavelengths of 300 (nm), 365 (nm), or 405 (nm). In the case where the light source uses a laser in the exposure unit, the output of the laser light is, for example, 10 to several hundreds (mj/cm2). The diameter of the laser light (beam spot diameter) is, for example, 1 μm to 2 μm. In the exposure unit, when the light source uses a laser, various lasers such as a semiconductor laser, a solid laser, a liquid laser, and a gas laser can be used. As the exposure unit, an exposure unit using a digital exposure method using laser light and an exposure unit using a mask exposure method can be used. In the digital exposure method, the image forming region is made lyophilic based on the image data of the formed image forming area from the image pattern obtained by the image processing unit 2A. When the exposure unit uses the exposure unit of the digital exposure mode, the following can be used: a series of ways: for example, scanning the direction in which the exposure single plane is orthogonal to the transport direction D of the panel, for example, in the area of the ^ The same amount of material can be processed by the same material [reading the fine-grained price f processing], and the processing of the scanning direction shifts the predetermined amount in the transport direction 0, the same as: the lower region of the region The reforming process is carried out, and the fall is performed repeatedly: Image = The entire image forming area is subjected to a reforming process. Further, in the exposure unit, an optical portion (not shown) may be provided, and when the processing is changed, the laser scanning is performed without sweeping the scanning. W Exposure unit advance 21 201239518 π υυυ / pif 六 。 In the exposure unit, the direction θ with respect to the transport direction D of the substrate Z may be an array type in which a plurality of lasers can be irradiated. The gas supply unit is a device for supplying the substrate 2 as needed when the light is irradiated, and forming a hydrophilic reaction gas in the field. The concentration (filling amount), supply, and ' of the reaction gas of the substrate 2 are adjusted by the gas 2 to the unit. Win the machine and so on. As the reaction gas, for example, an oxygen-containing reaction gas or a reaction gas can be used. Further, as long as the composition of the film 80 or the like can be converted into hydrophilicity by only light irradiation, it is not necessary to provide a gas supply unit. The image forming unit 18 is a device that forms a pattern by printing ink in a pattern formed by the hydrophilicity of the image forming region, that is, the image forming region after the reforming process. The pattern formed is a component of an electronic component such as a wiring of an electronic circuit or a thin germanium transistor (referred to as a TFT). For the ink, for example, an ink constituting a wiring portion of an electronic circuit or an electronic component such as a TFT is used. Further, the liquid (oil black) * soil ^' used in the formation of each constituent portion (gate, semiconductor layer, source/drain) of the TFT will be described in detail later. In the image forming unit 18, as long as the ink 'forming pattern' can be printed on the hydrophilic image forming area, the printing method is not particularly limited. For example, a screen printing method or an ink jet head can be used. Inkjet method. When a screen printing method is used, a screen having an image forming area-shaped opening corresponding to the hydrophilic image forming area is prepared, so that

22 201239518 40007pif This screen is used to supply ink in a hydrophilic image forming area to form a pattern. When an ink jet method using an ink jet head is used, a pattern is formed by dropping an ink droplet in a hydrophilic image forming region based on the droplet pattern data showing the position of the water-imposed image forming region. The size of the ink droplets ejected from the ink jet head is, for example, 1 〇 pm 〜 1 (8) μιη. The piezoelectric head, the thermal type, and the like can be suitably used for the configuration of the ink jet head. Moreover, the ink jet head can be of a tandem type or a full line (full_Hne) type. Further, when the ink jet method is used, the ink droplets are ejected based on the droplet pattern data. Therefore, the droplet position of the ink droplets can be easily changed by changing the droplet map. The device for changing the formation position of the pattern formed on the film 8G based on the strain information of the substrate 输出 outputted from the detecting unit 14 is used as the adjustment portion for forming the pattern. s installation. In the case of the Ministry of Science and Technology 2, when the exposure unit 16 is a digital exposure machine, based on the substrate Ζ #缝讯“for the positive exposure exposure meter recording table _ _ _ heart j The data is calibrated - the data of the positive/exposure pattern is rotated to the exposure exposure pattern data, and is re-formed by the exposure portion 16. Thereby, the appropriate position can be made into a hydrophilic image) and the region is hydrophilic and The forming portion 18 is the jet processing unit 2. When the image is set in accordance with the change of the exposure position, the corrected droplet pattern data for the droplet position correction of the H ink droplet is based on the strain information of the substrate z. Data input and positive drop pattern data output 23 201239518 4UUU/pif The image forming unit 18 forms a pattern in the hydrophilic image forming region by the image forming unit 18 based on the corrected droplet pattern data. Thus, the pattern can be formed at an appropriate position. When the exposure unit 16 is in the screen exposure mode, the image processing unit 20 changes the degree of strain of the substrate Z by the installation position of the screen based on the strain information of the substrate z. Thereby making the proper position into Further, when the image forming unit 18 is a screen printing method, the image processing unit 20 changes the installation position of the screen to the degree of strain of the substrate Z based on the strain information of the substrate z. The forming apparatus 1 of the present embodiment is a reel-to-reel method, but is not limited thereto. The forming apparatus 1 may be, for example, a sheet-by-piece feeding method for performing the substrate-by-grazing processing on the substrate Z. In the case of such a film-by-piece supply method, the strain position of the substrate 2 can be changed according to the strain information of the substrate Z in any case of the screen exposure method or the screen printing method. The film 80 contains, for example, a tablet having a hydrophilic-hydrophobic residual function (i.e., a change in hydrophilicity due to ultraviolet light). The forming device 10 can be used in such a film 8 containing a liquid repellent. The mark mark is formed on the crucible. For example, by making the alignment mark M into an annular shape, the formation is formed on the surface 80a of the film 80 containing the liquid repellent, and the alignment mark is also easily used. of ! Into the apparatus of FIG. 4 may be (a) as shown in the pattern-forming region to Japan ^ (b)) 2 is formed of a plurality of TFT 60. > '

24 201239518 4_7pif On the soil plate Z, 7 is formed into a film, and τρτ 6〇 is formed on the film 8〇. In the following manner, the film 8Q is formed in the following manner: a predetermined flatness is obtained in order to form a gate electrode, and electrical insulation is improved. In the film 80, the forming device 1A is used to form the outer edge of the pattern S as shown in Fig. 2 (8) by the steps shown in Figs. 3(a) to 3, (c). The alignment marks M are formed at the four corners of the portion (not shown in (a) of FIG. 4 and (b) of FIG. 4). In the TFT 60, a gate electrode 62 is formed on the surface 80a of the film 8A, and a gate insulating layer 82 is formed to cover the gate electrode 62 and the film 80. A semiconductor layer 64 that functions as an active layer is formed on the surface 82a of the gate insulating layer 82. A predetermined gap is formed in the semiconductor layer 64 as a channel region 68, and a source 66a and a drain 66b are formed. Further, the protective layer 84 is formed to cover the source 66a and the drain 66b. Further, the gate insulating layer 82 and the protective layer 84 include the same liquid repellent as the film 80, and the thickness thereof is, for example, the same as the thickness (film thickness) of the film 80, and is preferably 0.001 μηι to 1 μηη, particularly preferably 〇. .〇1 μπι~0.1 μιη. The TFT 60 is made hydrophilic by forming the formation region of the gate 62 on the surface 80a of the film 80 by forming the exposure portion 16 of the device 10, and forms a gate in the hydrophilic formation region by the image forming portion 18. Extreme 62. Since the forming device 10 does not have a function of forming an insulating layer, the gate insulating layer 82 is formed using another device. The gate insulating layer 82 also contains, for example, a liquid repellent having a hydrophilic-hydrophobic conversion function (i.e., a change in hydrophilicity due to ultraviolet light), as well as the film 80. Thereafter, on the surface 82a of the gate insulating layer 82, the shape of the semiconductor layer 64 is formed by the exposure portion 16 of the device 10 to be hydrophilicized. The hydrophilicity is formed by the image forming portion 18. The area forms a conductor layer 64. Next, the formation region where the source electrode 66a and the gate electrode 66b are formed is made hydrophilic by the exposure portion 16 of the device 1A, and the source (6) is formed in the hydrophilic region by the image forming portion 18. Disparity _. Next, a protective layer 84 made of, for example, resin is formed by using another device. As for the protective layer 84, no element is formed thereon, and it is not necessary to have a liquid repellent such as a film which has a Wei-poor conversion (i.e., a change in hydrophilicity due to ultraviolet light) as in the case of the film 8?. When the TFT 1G is formed in the forming apparatus 1G, the registration mark M is formed on the surface, and the ridge electrode 61 is used to define the body layer 64 and the source 66a and the drain 66b. However, when the alignment mark M of the surface 8Ga of the film 8G cannot be detected by the detecting portion 由于 due to the gate insulating layer 82',

Si? 2 forms an alignment mark at the same position or other position as the film 8 () in the form of <RTI ID=0.0>>>> Thereby, even in the other layers such as the alignment mark ^, it becomes impossible to detect the alignment of the alignment marks by the alignment marks. J. In the forming apparatus 10 of the present embodiment, the mark forming portion 12 is provided to form the alignment mark 201239518 40007pif M, but the present invention is not limited thereto. For example, as in the forming apparatus 10a of the second embodiment shown in FIG. 5, the printing unit 30 is provided between the exposure unit 16 and the image forming unit 18 instead of the mark forming unit 12', and the printing can be performed in this manner. The detecting unit 14 is disposed between the portion 30 and the image forming unit 18. In the wire setting l〇a, the mark forming portion 12 can be realized by the exposure portion 16 and the printing portion 30. In the forming apparatus 10a, the same components as those of the forming apparatus 10 of the second embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted. The printing unit 30 of the liver forming apparatus 10a includes the marking unit 28 of the forming apparatus ίο of the first embodiment. Therefore, the detailed description of the mark printing portion 28 will be omitted. * In the forming apparatus 10a of the present embodiment, the mark pattern is exposed on the surface 80a of the film 80 by the exposure portion 16. Next, the visualized ink is printed on the exposed area of the mark pattern by the mark print portion 28 of the printing portion 30 to form the alignment mark M. The alignment mark M is detected by the detecting unit 14 in the same manner as the seventh unit 10 of the second embodiment, and the position is determined, and the substrate Z is 35 sfL. The image of the substrate z is used by the image forming portion 18 in pattern formation. In the forming apparatus of the present embodiment, the TFT 60 shown in Fig. 4(a) and Fig. 4(b) can be formed in the same manner as in the case of forming I1G in the first embodiment. Further, in the forming apparatus 10a of the present embodiment, the alignment rod recording can be formed even on the surface 80a of the film 80 containing the liquid repellent, similarly to the forming apparatus of the second embodiment. Further, it is easy to detect, and the effect of the forming apparatus J of the first embodiment is 27 201239518 ^WU/pif. Further, in the mark exposure portion which is also used as the alignment mark 本 in the present embodiment, the exposure portion 16 in Ga is exposed by the exposure portion 16 on the surface sn of the film 80, so that the exposure is performed by the region _ The image to be brewed is formed as a mark pattern of the alignment mark 。. In the strain information state of the surface light, the composition of the TFT 60, the gate 62, and the semiconductor layer 66a/^66b^; (ink) will be specifically described below. The conductive material for forming the gate electrode 62 and the source electrode 66a/dip pole 6 includes conductive fine particles. The particle diameter of the conductive fine particles is preferably i kiss or more and 100 nm or less. The reason for this is that if the grain size of the conductive fine particles is larger than 100 nm, clogging of the nozzle is likely to occur. The spraying by the ink jet method is difficult. Further, when the particle diameter of the conductive fine particles is less than j nm, the volume ratio of the coating agent to the conductive fine particles becomes large, and the ratio of the organic matter in the obtained film becomes excessive. ' 4 The dispersoid concentration is 1 wt% or more and 80 wt% or less, and can be adjusted according to the desired film thickness of the electroconductive film. If the dispersoid concentration exceeds 8 〇 wt%, = becomes agglomerated easily, and it is difficult to obtain a uniform film. The surface tension of the dispersion of the conductive fine particles is preferably in the range of mN/m or more and 70 mN/m or less. The reason for this is that when the liquid is ejected by the inkjet method, if the surface tension is less than 20 mN/m, the wettability of the ink composition with respect to the nozzle surface is increased, so that it becomes easy to generate the fly 28 201239518 40007pif line Bending; if it exceeds 7 〇 mN/m, the shape of the meniscus at the tip end of the nozzle is unstable, so that the discharge amount and the timing of the discharge timing become difficult. The viscosity of the dispersion is preferably 1 mpa.s or more and 5 〇mPa.s or less. The reason for this is that when the viscosity is less than ImPa·= when the ink is ejected by the inkjet method, the peripheral portion of the nozzle is easily handled by the outflow of the ink, and when the viscosity is more than 5 〇 mPa·s. In this case, the frequency of clogging in the nozzle hole becomes high*, making it difficult to eject the droplets of the paste. The kAA^ material is, for example, a conductive material containing silver particles. Silver can be used as: /, two metal particles such as gold m, money, iron, ^ = iron, tin, zinc, abundance, nickel, Luo, Qin, group, crane, steel, any two U can also use any 42 An alloy of the above combinations. It takes you: rice particles. In addition to the metal fine particles, fine particles of a conductive polymer or a superconductor or the like can be used. The coating material of the surface of the microparticles is, for example, an organic solvent such as a carbamide or a sputum, or citric acid. The sub-division; ===1: If it is possible to disperse the above-mentioned conductive microparticles, such as gamma-burning, simmering, sputum, and a; alcohols such as ethanol, propanol, and butanol, all of them are stupid, knotted, and double^ Ben, 4, isopropyl carbene, and other hydrocarbon compounds, or bismuth naphthalene, decalin, cyclohexyl phenyl fluorenyl ethane methine, 7 _ — humiliation test, ethylene glycol diethyl ether, Ethylene sulphate monoethylene glycol dimethyl ether, -B-sina-r pure diol decyl ethyl ether, 12_ field:: one ethyl hydrazine to diethyl ether, diethyl ether, p-. Sub-milk-ethyl bromide, bis(2-methoxyethyl)-p-alkylene ether compound, 29 201239518 πυυυ/pif K methyl-2 ruthenium ketone, dimethyl ketone, dimethyl Polar compounds such as sub-stone and cycloheximide. Among these dispersion media, water, an alcohol, a hydrocarbon compound, and an ether compound are preferable from the viewpoints of dispersibility of fine particles, stability of a dispersion, and easiness in application to an inkjet method. Preferred knives; I can be exemplified by water and smog compounds. These dispersion media may be used singly or as a mixture of two or more kinds. Further, as the binder, one type of the following binders may be used or two or more types may be used in combination. Alkyd resin, modified alkyd resin, modified epoxy resin, amine acetated oil, polyurethane resin, rosin resin, rosin oil , maleic acid resin, maleic anhydride resin, polybutene resin, diallyl phthalate resin, polyester resin, polyester oligomer, mineral oil, vegetable oil, amine ester oligomer, A copolymer of allyl ether and maleic anhydride (the copolymer may be added with another monomer (for example, styrene or the like) as a copolymerization component). Further, in the metal paste of the present invention, a dispersing agent, a wetting agent, a thickener, a leveling agent, a scum inhibitor, a gelling agent, a stone oil, an organic resin, an antifoaming agent, and the like may be appropriately selected and added. A plasticizer or the like is used as an additive. Further, as the conductive material, a conductive organic material may be used. For example, a polymer-based soluble material such as polyaniline, polythiophene or polyphenylacetylene may be contained. An organometallic compound may also be included in place of the metal microparticles. The term "organometallic compound" as used herein refers to a compound which can precipitate a metal by thermal decomposition. Such organometallic compounds are: gas (triethylphosphine) gold, gas (trimethylphosphine) gold, gas (triphenylphosphine) gold, acetoacetone silver, tridecylphosphine (hexafluoroacetone acetone) Silver complex, hexafluoroacetic acid-cyclooctane di-bright copper complex, and the like. As for the semiconductor material constituting the semiconductor layer 64, the 201239518 40007pif viscosity of the dispersion is preferably! mPa · s or more, 5GmPa · s or less. When the ink is ejected by the inkjet method, when the viscosity is less than lmPa.s, the peripheral portion of the nozzle is easily subjected to m by the outflow of the ink, and if the viscosity exceeds 5 〇 mPa · s' The clogging is so high that it becomes difficult to eject the smooth droplets. As the conductor layer for constituting the semiconductor layer 64, an inorganic semiconductor such as C10, GaAsj InP, Si, Ge, carbon nanotube, ruthenium or Zn ruthenium can be used, and organic materials such as 蒽 蒽, 四, and phthalocyanine can be used. Low molecular weight, = sub, poly(p-phenylene) and its derivatives, polypyrene bromide and == Benxi conductive host molecules, poly-transfer and its contacts, phenanthrene and its derivatives, polypyran and its derivatives, etc. High-heterocyclic organic conductivity is generally high. The high-boiling organic solvent is usually used for the coating of the fluorene-conducting polymer such as a derivative thereof. For example, usually H benzene 'p-terpene benzene, tetralin, ethoxybenzene, 1,3,5-dimercaptobenzene, 1,5-dimethylnaphthyl, 4-methyl cumene ether dibenzene Wait. In addition, the following materials are not used for the electric layer of the interlayer insulating film such as the protective layer 84 or the material having a large margin.具·十= can be listed as "imine, poly-bonded imine, epoxy resin = sesquitergic oxygen =, polyethylation, polycarbon _, fluorine resin, parylene, polyethylene butyl, etc. , Poly-B- or polyvinyl alcohol can also use a suitable cross-linking agent's can be exemplified by polyfluorinated dimethyl benzene, air-impacted imine, chaotic (4), polytetrafluoroethylene, polystyrene, poly (4) Office 31 201239518 40007pif four il-p-terpene benzene), poly(ethylene/tetrafluoroethylene), poly(ethylene/tri-chloroethylene), fluorinated polymer of ethylene/propylene copolymer, polythene Tobacco polymer, as well as polystyrene, poly(α-methyl stupid), poly(01 vinyl), polyvinyltoluene, polybutene, polyisoprene, poly (4 Pentylpentene), poly(2-mercapto-; 1,3-butadiene), poly(p-dimethyl phenyl), poly ρ, 卜(2_mercaptopropene) bis(4-phenyl) carbonated vinegar ], polyfluorene-based dilute acid cyclohexanol, polychlorostyrene, poly(2,6.dimethyl), 4·extension base, polyvinylcyclohexane, polypropene ether, 1 benzene, poly Styrene · altogether _α•methyl phenylethylene, ethylene/acrylic acid acetaminophen, poly (stupid) Ethylene/butadiene), poly(p-ethyl dimethyl styrene), etc. The porous insulating film can be exemplified by the addition of a filled stone in the evening of the sulphur dioxide, and the addition of a dish in the oxidized 7 And; lion's lion (tetra) acid glass, water isk imine, polyacrylic acid and other porous insulating film. Moreover, it can form a ruthenium thiol-containing oxygen, porous hydrogen sesqui can be burned, porous sulfhydryl hydrogen The present invention is basically configured as described above. In the above, the pattern 成v assembly 1 and the pattern forming method of the present invention have been described in detail, but the present invention is The present invention is not limited to the above-described embodiments, and various modifications and changes can be made without departing from the spirit and scope of the invention. FIG. 1 is a view showing a pattern forming apparatus according to a first embodiment of the present invention. Fig. 2(a) is a schematic cross-sectional view showing a substrate used in the pattern forming apparatus according to the first embodiment of the present invention, and Fig. 2(e) is a table 32 201239518 4UUU/plf showing the first aspect of the present invention. Used in the pattern forming apparatus of the embodiment 3(a) to 3(C) are schematic diagrams showing the steps of forming an alignment mark by the pattern forming apparatus according to the first embodiment of the present invention, in the order of steps, (d) of FIG. (a) is a schematic view showing another example of the alignment mark. Fig. 4 (a) is a schematic view showing a thin film transistor formed by the pattern forming apparatus according to the first embodiment of the present invention, and Fig. 4 (b) is a cross-sectional view corresponding to the HH line of Fig. 4(a). Fig. 5 is a schematic view showing a pattern forming apparatus according to a second embodiment of the present invention. [Description of Main Element Symbols] 10, 10a: Pattern Formation Device (forming device) 12: mark forming portion 14: detecting portion 16: exposure portion 18: image forming portion 20: image processing portion 22: mark exposure portion 24: light source 26: mask 28: mark printing portion 30: printing Portion 40: Rotary shaft 33 201239518 ^υυυ/pif 42 : Winding shaft 60 : TFT 62 : Gate 64 : Semiconductor layer 66a : Source 66b : Drain pole 68 : Channel region 80 : Film 80 a : Surface 82 of film 80 : Gate insulating layer 82a: surface 84 of gate insulating layer: protective layer 100: alignment mark Forming region 102: a pattern exposed region 104: 110 non-exposed regions: Visualization Ink D: [mu] conveyance direction: the alignment marks S: pattern forming region [zeta]: the substrate 34

Claims (1)

201239518 4UUU/pif VII. Patent application scope: "Pattern:: a film formed on a substrate to form a predetermined pattern; a repulsion _ 'two hex: brush portion, an exposure ink in the mark pattern, forming the Alignment mark 2. The pattern according to item ith of the patent scope further includes: II mark detecting portion that detects the alignment of the printed ink to obtain the alignment mark Position information; an adjustment unit that changes a position of a pattern formed on the film or changes a position of the substrate based on a positional message of the alignment mark, thereby adjusting a position at which the pattern is formed; and image formation The pattern forming device according to the second aspect of the invention, wherein the image forming portion includes the pattern forming region in the film And a patterning device according to any one of the items of the present invention, wherein the pattern forming device according to any one of the items of the present invention, wherein The visualizing ink is an ink that absorbs or reflects light of a wavelength that does not change the hydrophilicity of the film. 35 201239518 HUUU/pif 5. The pattern forming apparatus of claim 4, wherein The visual ink is a water-soluble ink or a metal ink. The method of forming a pattern is a method for forming a pattern of a mosquito, which is characterized by: U-shaped ?:== formation, film containing a liquid repellent Exposing a mark pattern that becomes an alignment mark: and printing a step ink that visualizes an oil-based alignment mark in an exposed area of the mark pattern, and forming a pattern forming method for printing the visible ink And the step of obtaining the position information of the target (4) is based on the position information of the alignment mark, changing::=== the position of the substrate, and adjusting the step of forming a pattern on the film of the substrate. a method, wherein the step of forming a pattern on the film by forming a pattern as described in claim 6 or 7 includes a step of making the surface forming region hydrophilic, And forming region becomes, the step of printing text ^. The FIG. 36 _