CN117293129A - 双屏蔽的半导体器件和方法 - Google Patents
双屏蔽的半导体器件和方法 Download PDFInfo
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Abstract
本公开涉及双屏蔽的半导体器件和方法。半导体器件具有基板。在基板上设置第一电组件和第二电组件。在第一电组件和第二电组件之间的基板上形成导电柱。通过喷射印刷导电材料,在第一电组件和导电柱上形成第一屏蔽层。通过溅射、喷涂或电镀导电材料,在第一电组件和第二电组件上形成第二屏蔽层。可选地,通过在第一屏蔽层上喷射印刷绝缘材料,在第一屏蔽层和第二屏蔽层之间形成绝缘层。
Description
技术领域
本发明一般地涉及半导体制造,并且更特别地涉及半导体封装的双屏蔽的半导体器件和方法。
背景技术
半导体器件通常存在于现代电子产品中。半导体器件执行各种各样的功能,诸如信号处理、高速计算、发射和接收电磁信号、控制电子器件、将太阳光转换成电以及为电视显示器创建可视图像。半导体器件存在于通信、功率转换、网络、计算机、娱乐和消费产品的领域中。半导体器件也存在于军事应用、航空、汽车、工业控制器和办公设备中。
半导体器件通常易受可能干扰它们操作的电磁干扰(EMI)、射频干扰(RFI)、谐波失真或者其它器件间干扰诸如电容、电感或导电耦合(也称为串扰)的影响。高速模拟电路例如射频(RF)滤波器或数字电路也产生干扰。
导电层通常形成在半导体封装上以屏蔽封装内的电子部件以免受EMI和其它干扰的影响。屏蔽层在信号到达封装内的半导体管芯和分立组件之前吸收EMI,否则EMI可能导致器件的故障。屏蔽层也形成在具有预期产生EMI的组件的封装上以保护附近的器件。
半导体封装屏蔽的现有技术方法的一个问题是:共形屏蔽层没有防止EMI回路电流流过屏蔽层并且在相同半导体封装的敏感邻近组件中引发电场和磁场。仅在最敏感的管芯或组件上的选择性屏蔽有效地阻挡噪声源并且增强仅选择性屏蔽的组件的电性能。
然而,在敏感组件上形成选择性屏蔽以及在整个半导体封装上形成共形屏蔽是复杂且高成本的工艺。因此,存在对改进的、双屏蔽的半导体器件和方法的需要。
附图说明
图1a-1c示出具有由切道分开的多个半导体管芯的半导体晶片;
图2a-2g示出形成具有选择性屏蔽的双屏蔽层;
图3示出在屏蔽层之间没有隔离的双屏蔽的实施例;
图4a-4e示出在凹陷中形成选择性EMI屏蔽;以及
图5a和5b示出将双屏蔽的半导体封装集成到电子器件中。
具体实施方式
在以下描述中,参考附图以一个或多个实施例来描述本发明,其中,相同的附图标记表示相同或类似的元件。虽然根据用于实现本发明的目的的最佳模式描述本发明,但是本领域技术人员将会理解,本发明旨在覆盖可以包括在由所附权利要求以及它们的由以下公开和附图支持的等同物限定的本发明的精神和范围内的替代、修改和等同物。本文中所使用的术语“半导体管芯”指代单数形式和复数形式的词语两者,且因此可以指代单个半导体器件和多个半导体器件两者。术语“管芯”和“半导体管芯”可互换使用。
半导体器件通常是使用两种复杂的制造工艺来制造的:前端制造和后端制造。前端制造涉及在半导体晶片的表面上形成多个管芯。晶片上的每个管芯包含被电连接以形成功能电路的有源和无源电组件。诸如晶体管和二极管的有源电组件具有控制电流流动的能力。诸如电容器、电感器和电阻器的无源电组件创建执行电路功能所需的、电压和电流之间的关系。
后端制造指代将完成的晶片切割或单片化为个体半导体管芯并且封装该半导体管芯以用于结构支撑、电互连和环境隔离。为了单片化半导体管芯,晶片沿着称为切道或划线的晶片的非功能区来刻划和断开。使用激光切割工具或锯刀将晶片单片化。在单片化之后,将个体半导体管芯安装到封装基板,所述封装基板包括用于与其它系统组件互连的引脚或接触焊盘。然后将形成在半导体管芯上的接触焊盘连接到封装内的接触焊盘。可以用导电层、凸块、柱形凸块、导电膏、线接合或其它合适的互连结构来进行电连接。密封剂或其它模制化合物沉积在封装上以提供物理支撑和电隔离。然后将完成的封装插入到电系统中,并且使半导体器件的功能可用于其它系统组件。
图1a示出具有基底基板材料102的半导体晶片100,所述基底基板材料102诸如硅、锗、磷化铝、砷化铝、砷化镓、氮化镓、磷化铟、碳化硅或其它块体半导体材料。多个半导体管芯或组件104形成在晶片100上,由非有源、管芯间晶片区域或切道106分开,如上所述。切道106提供切割区域以将半导体晶片100单片化成单个半导体管芯104。在一个实施例中,半导体晶片100具有100-450毫米(mm)的宽度或直径。
图1b示出半导体晶片100的一部分的截面图。每个半导体管芯104具有背面或非有源表面108和有源表面110,所述有源表面110包含:模拟或数字电路,被实现为根据管芯的电设计和功能而形成在管芯内或管芯上并电互连的有源器件、无源器件、导电层和介电层。例如,电路可以包括一个或多个晶体管、二极管和形成在有源表面110内以实现模拟电路或数字电路的其它电路元件,诸如数字信号处理器(DSP)、ASIC、MEMS、存储器或其它信号处理电路。半导体管芯104也可以包含用于RF信号处理的集成无源器件(IPD),诸如电感器、电容器和电阻器。半导体晶片100的背表面108可以经历:可选的背面研磨操作,该操作利用机械研磨或蚀刻工艺来去除基底材料102的一部分并且减小半导体晶片100和半导体管芯104的厚度。
使用PVD、CVD、电解电镀、化学电镀工艺或其它合适的金属沉积工艺在有源表面110上形成导电层112。导电层112包括一层或多层铝(Al)、铜(Cu)、锡(Sn)、镍(Ni)、金(Au)、银(Ag)或其它合适的导电材料。导电层112作为电连接到有源表面110上的电路的接触焊盘操作。
导电层112可以形成为距半导体管芯104的边缘第一距离并排设置的接触焊盘,如图1b中所示。替选地,导电层112可以形成为接触焊盘,所述接触焊盘在多个行中偏移,使得第一行接触焊盘距管芯的边缘第一距离设置并且与第一行交替的第二行接触焊盘距管芯的边缘第二距离设置。导电层112表示形成在半导体管芯104上的最后导电层,所述最后导电层具有用于随后电互连到较大系统的接触焊盘。然而,可以存在形成在有源表面110上的实际半导体器件和接触焊盘112之间用于信号路由的一个或多个中间导电和绝缘层。
使用蒸发、电解电镀、化学电镀、球滴或丝网印刷工艺在导电层112上沉积导电凸块材料。凸块材料可以是具有可选的助焊剂溶液的Al、Sn、Ni、Au、Ag、铅(Pb)、铋(Bi)、Cu、焊料及其组合。例如,凸块材料可以是共晶Sn/Pb、高铅焊料或无铅焊料。使用合适的附着或接合工艺将凸块材料接合到导电层112。在一个实施例中,通过将凸块材料加热到其熔点以上来使该材料回流以形成导电球或凸块114。导电凸块114可选地形成在具有润湿层、阻挡层和粘合层的凸块下金属化层(UBM)上。导电凸块114也可以压紧接合或热压接合到导电层112。导电凸块114表示:一种类型的互连结构,其可以形成在导电层112上以电连接到基板。互连结构也可以使用接合线、导电膏、柱形凸块、微凸块或其它电互连。
在图1c中,使用锯刀或激光切割工具118通过切道106将半导体晶片100单片化成个体半导体管芯104。可以检查和电测试个体半导体管芯104,以识别单片化后的已知良好管芯(KGD)。
图2a-2g示出形成具有半导体管芯104的半导体封装150。在一些实施例中,封装150是系统级封装(SiP)模块。图2a示出基板152的局部截面图。虽然仅示出单个基板152,但是使用本文中针对单个单元描述但是一起执行的相同步骤,在共同载板上共同处理数百或数千基板。基板152也可以作为用于多个单元的单个大基板开始,所述多个单元在制造工艺期间或之后彼此单片化。
基板152包括与一个或多个导电层156交错的一个或多个绝缘层154。在一个实施例中,绝缘层154是在顶表面和底表面上图案化导电层156的芯绝缘板,例如覆铜层压基板。导电层156也包括通过绝缘层154电耦合的导电通孔。基板152可以包括任何数量的在彼此上交错的导电层和绝缘层。焊料掩模或钝化层可以形成在基板152的任一侧上。在其它实施例中,任何合适类型的基板或引线框架用于基板152。
图2a中的半导体封装150已具有安装于其上的半导体管芯104、分立组件160和导电柱162,以及任何其它分立有源或无源组件、半导体管芯或期望用于封装的预期功能的其它组件。焊料凸块114在导电层156和半导体管芯104之间回流,以将管芯机械和电连接到基板152。任何类型和数量的组件可以安装到基板152的顶表面(如图2a中所示)、底表面或两者上,并且也可以以任何合适的顺序和配置嵌入在基板内。
如图所示的分立组件160仅是代表性的。可以使用任何类型和数量以及组件。导电柱162提供对半导体管芯104与分立组件160之间的电磁干扰(EMI)的横向阻挡。导电柱162通常但不是必须通过基板152耦合到地以帮助EMI减小。导电柱162可以是分布在半导体管芯104周围的多个分立柱,或者是在半导体管芯周围一直连续延伸的单片材料。导电柱162由铝、铜、钢、钛、金、其它金属或者其组合或合金形成。导电柱162被单独形成,然后被拾取并放置到基板152上。在其它实施例中,使用光致抗蚀剂层作为被去除的掩模,导电柱162直接形成在基板152上。
在将半导体管芯104、分立组件160、导电柱162以及任何其它期望的电组件安装到基板152上之后,通过密封剂或模制化合物170来密封这些组件。使用膏印刷、压紧模制、传递模制、液体密封剂模制、真空层压、旋涂或另一合适的施加器将密封剂170沉积在基板152、半导体管芯104、分立组件160和导电柱162上。密封剂170可以是聚合物复合材料,诸如环氧树脂、环氧丙烯酸酯或具有或不具有填料的聚合物。密封剂170是不导电的,提供结构支撑,并且在环境上保护半导体器件以免受外部元件和污染物的影响。密封剂170完全覆盖半导体管芯104、分立组件160和导电柱162的顶表面和侧表面。密封剂170填充基板152和半导体管芯104或分立组件160之间的任何间隙,除非使用单独的底部填充。
在图2c中,通过用机械研磨器172进行背面研磨来去除密封剂170的一部分。在其它实施例中,使用化学蚀刻、化学机械平坦化(CMP)或另一合适的平坦化方法。研磨工艺暴露导电柱162并且使密封剂170的顶表面174与导电柱的顶表面176共面,如图2d中所示。在其它实施例中,在形成导电柱162之前沉积密封剂170。在这种情况下,通过钻穿密封剂170到基板152并用导电材料填充所得到的通孔或孔来形成导电柱162。在一个实施例中,使用喷射印刷在密封剂170中形成导电柱162。
在图2e中,通过金属油墨的喷射印刷在半导体管芯104和导电柱162上形成选择性屏蔽层180。喷射印刷在图2e中由喷嘴182表示。喷嘴182可以用于以任何任意图案形成选择性屏蔽层180。导电油墨印刷可以是电流体动力(EHD)喷射印刷,其中,在制造期间在喷嘴和用作封装150的载板的导电板之间的电场被用于引导正被印刷的导电油墨。在一些实施例中,使用激光转移印刷来形成选择性屏蔽层180。在激光转移印刷中,金属涂覆的透明膜设置在半导体封装150上,其中,金属朝向封装取向。通过将激光聚焦到期望印刷选择性屏蔽层180的膜上,将金属从膜转移到半导体封装150。在其它实施例中使用气溶胶喷射印刷或另一类型的导电材料印刷。印刷材料是铜、钢、铝、金、钛、其组合或任何其它合适的材料。
选择性屏蔽层180形成为延伸到每一导电柱162且填充导电柱之间的表面174的区域的材料片。选择性屏蔽层180直接形成在导电柱162的顶表面176上。选择性屏蔽层180与导电柱162组合形成了特别用于半导体管芯104或对EMI特别敏感的一个或多个其它组件的EMI屏蔽。选择性屏蔽层180可以完全填充导电柱162之间的占用空间(footprint)区域,或可以形成有孔、条带或其它间断。
选择性屏蔽层180仅形成在导电柱162之间的其中定位敏感组件的区域上,并且不形成在所讨论的区域外部。具有专用于半导体管芯104的屏蔽层的目的是减小EMI回路电流,所述EMI回路电流从封装150中的其它地方在选择性屏蔽层180中引发并且在半导体管芯中引起干扰,反之亦然。出于各种原因,选择性屏蔽层180可以延伸到导电柱162之间的区域外部,但在其它组件上延伸选择性屏蔽层180可能通过增加选择性屏蔽内和外的组件之间的EMI回路电流而减小选择性屏蔽层的功效。
在图2f中,在选择性屏蔽层180上形成绝缘层190。绝缘层190用喷嘴182或第二喷嘴喷射印刷以分开导电材料和绝缘材料的印刷。在其它实施例中,通过激光转移印刷或另一类型的绝缘层印刷来印刷绝缘层190。绝缘层190包含一层或多层二氧化硅(SiO2)、氮化硅(Si3N4)、氮氧化硅(SiON)、五氧化二钽(Ta2O5)、氧化铝(Al2O3)、阻焊剂、聚酰亚胺(PI)、苯并环丁烯(BCB)、聚苯并恶唑(PBO)或具有类似绝缘和结构属性的其它材料。绝缘层190完全覆盖选择性屏蔽层180,并且向下延伸以物理接触在选择性屏蔽层周围的密封剂170。
选择性屏蔽层180和绝缘层190通常形成在条带级,这意味着封装150保持为作为大的未单片化条带一起形成在基板152上的封装条带,或者保持为共同条带载板上的单片化封装。相对于用材料覆盖单元的整个面板并且然后使用光刻或另一合适机制来图案化各层的现有技术方法,喷射印刷减小了仅在导电柱162之间的区域上形成选择性屏蔽层180和绝缘层190的复杂性和成本。
如果半导体封装150形成为单元条带,则在图2g中在整个封装上形成共形屏蔽层200之前将所述条带单片化。使用任何合适的金属沉积技术,例如化学气相沉积、物理气相沉积、其它溅射方法、喷涂或电镀,形成共形屏蔽层200。溅射材料可以是铜、钢、铝、金、其组合或任何其它合适的材料。共形屏蔽层200完全覆盖密封剂170、基板152和绝缘层190的暴露表面。导电层156可以在基板152的侧面处暴露,以通过基板将屏蔽层200连接到地。
绝缘层190将选择性屏蔽层180与共形屏蔽层200物理和电隔离。保持选择性屏蔽层180与共形屏蔽200物理隔离减小了由在选择性屏蔽外部的分立组件160或其它组件创建的、共形屏蔽200中的EMI回路电流由于专用于半导体管芯的额外选择性屏蔽而对半导体管芯104具有的影响。相反,在选择性屏蔽层180中由半导体管芯104产生的EMI回路电流通过被直接分流到地而不是共形屏蔽层200而对分立组件160具有减小的影响。喷射印刷选择性屏蔽层180和绝缘层190减小了制造的成本和复杂性。
图3示出作为半导体封装210的另一实施例。半导体封装210以与半导体封装150基本相同的方法形成,除了在选择性屏蔽层180和共形屏蔽层200之间没有形成绝缘层190。在没有绝缘层190的情况下,共形屏蔽层200直接形成在选择性屏蔽层180上。在屏蔽层之间没有物理隔离的情况下,EMI回路电流在两者之间流动。然而,导电柱162的到地的额外路径仍然帮助在与仅具有共形屏蔽层200相比更大的程度上将EMI回路电流分流到地。特别即使在没有绝缘层190的物理隔离的情况下,选择性屏蔽层180与共形屏蔽层200组合的额外厚度也帮助屏蔽半导体管芯104。
图4a-4e示出形成凹入在半导体封装220内的选择性屏蔽层。在图4a中,密封剂170沉积在导电柱162上,如图2b中那样。在图4b中,通过激光烧蚀、化学蚀刻或另一合适的工艺在密封剂170中形成凹陷222。凹陷222形成下至导电柱162,使得每个导电柱的顶表面176在凹陷内暴露。凹陷222遵循与上面针对选择性屏蔽层180所讨论的占用空间相同的占用空间。
在图4c中,选择性屏蔽层230形成在凹陷222内。通过喷射印刷、通过溅射穿过光致抗蚀剂掩模、或通过另一合适的工艺来形成选择性屏蔽层230。选择性屏蔽层230可以使用上面针对选择性屏蔽层180所讨论的任何方法和材料来形成。在一个实施例中,选择性屏蔽层230填充凹陷222的占用空间,并且物理接触每个导电柱162的顶表面176。在其中选择性屏蔽层230不完全填充导电柱162之间的占用空间区域的实施例中,凹陷222仍然可以根据需要用形成有条带、孔或其它间断的选择性屏蔽层230来完全填充占用空间区域。替选地,凹陷222可以形成有用于选择性屏蔽层230的期望最终形状,然后使其占用空间被喷射印刷导电材料完全填充。选择性屏蔽层230凹入到密封剂170的顶表面232之下。
在图4d中,凹陷222的剩余体积用绝缘层240填充。绝缘层240以与上述绝缘层190类似的方式且由与上述绝缘层190类似的材料形成。绝缘层240可以被喷射印刷以将凹陷222填充成表面与密封剂170的顶表面232共面。在一些实施例中,凹陷222被绝缘层240过度填充,然后对封装222进行背面研磨以使密封剂170和绝缘层240共面。在其它实施例中,凹陷222没有被完全填充。
在图4e中,在封装220上形成共形屏蔽层250,该共形屏蔽层250完全覆盖封装的顶表面和侧表面。在其中封装220形成为器件面板的实施例中,将面板单片化以将封装彼此分离并暴露封装的侧表面以用于屏蔽。屏蔽层250以与上述共形屏蔽层200类似的方式且由与上述共形屏蔽层200类似的材料形成。封装220仅在半导体管芯104或其它敏感组件上提供选择性屏蔽层230,以及在整个封装上提供共形屏蔽层250。选择性屏蔽层230减小封装220的不同区域之间的EMI回路电流的影响。选择性屏蔽层230凹入在密封剂170内,使得封装220的顶表面横跨封装的整个占用空间是平坦的。在另一实施例中,不使用绝缘层240,并且共形屏蔽层250直接形成在选择性屏蔽层230上,类似于图3的实施例但是选择性屏蔽层凹入。如果期望保持封装220的顶表面平坦,则选择性屏蔽层230可以形成有与密封剂170共面的表面。
图5a和5b示出将上述半导体封装(例如半导体封装150)集成到较大电子器件340中。图5a示出了作为电子器件340的一部分安装到印刷电路板(PCB)或其它基板342上的半导体封装150的局部截面。在任何期望的制造阶段,与上述凸块114的描述类似地形成凸块346,并且将凸块346回流到PCB 342的导电层344上以将半导体封装150物理附着并电连接到PCB。在其它实施例中,使用热压或其它合适的附着和连接方法。在一些实施例中,在半导体封装150和PCB 342之间使用粘合剂或底部填充层。半导体管芯104通过基板152电耦合到导电层344。
图5b示出包括PCB 342的电子器件340,其中,在PCB的表面上安装多个半导体封装,包括半导体封装150。电子器件340可以具有一种类型的半导体封装,或者多种类型的半导体封装,这取决于应用。电子器件340可以是使用半导体封装来执行一个或多个电功能的独立系统。替选地,电子器件340可以是较大系统的子组件。例如,电子器件340可以是平板计算机、蜂窝电话、数码相机、通信系统或其它电子器件的部分。电子器件340也可以是图形卡、网络接口卡或插入到计算机中的另一信号处理卡。半导体封装可以包括微处理器、存储器、ASIC、逻辑电路、模拟电路、RF电路、分立有源或无源器件,或其它半导体管芯或电组件。
在图5b中,PCB 342提供用于安装在PCB上的半导体封装的结构支撑和电互连的通用基板。使用蒸发、电解电镀、化学电镀、丝网印刷或其它合适的金属沉积工艺在PCB 342的表面上或层内形成导电信号迹线344。信号迹线344在半导体封装、安装的组件和其它外部系统或组件之间提供电通信。迹线344也根据需要向半导体封装提供电源和地连接。
在一些实施例中,半导体器件具有两个封装级。第一级封装是用于将半导体管芯机械和电附着到中间基板的技术。第二级封装涉及将中间基板机械和电附着到PCB 342。在其它实施例中,半导体器件可以仅具有第一级封装,其中,管芯机械和电直接安装到PCB342。
出于说明的目的,在PCB 342上示出几种类型的第一级封装,包括接合线封装346和倒装芯片348。另外,几种类型的第二级封装,包括球栅阵列(BGA)350、凸块芯片载板(BCC)352、焊盘栅格阵列(LGA)356、多芯片模块(MCM)358、四方扁平无引线封装(QFN)360、四方扁平封装362和嵌入式晶片级球栅阵列(eWLB)364,被示出为与半导体封装150一起安装在PCB 342上。导电迹线344将设置在PCB 342上的各种封装和组件电耦合到半导体封装150,从而将半导体封装150内的组件的使用给予PCB上的其它组件。
根据系统要求,配置有第一和第二级封装样式的任何组合的半导体封装以及其它电子组件的任何组合可以连接到PCB 342。在一些实施例中,电子器件340包括单个附着的半导体封装,而其它实施例要求多个互连的封装。通过在单个基板上组合一个或多个半导体封装,制造商可以将预制组件并入到电子器件和系统中。由于半导体封装包括复杂的功能,所以可以使用不太昂贵的组件和流水线制造工艺来制造电子器件。所得到的器件不太可能失效,并且制造不太昂贵,从而导致消费者的更低成本。
尽管已经详细地示出本发明的一个或多个实施例,但是本领域技术人员将会理解:在不偏离所附权利要求中阐述的本发明的范围的情况下,可以进行对那些实施例的修改和适配。
Claims (15)
1.一种制造半导体器件的方法,包括:
提供基板;
在所述基板上设置第一电组件和第二电组件;
在所述第一电组件和所述第二电组件之间的所述基板上设置导电柱;
通过喷射印刷导电材料,在所述第一电组件和导电柱上形成第一屏蔽层;以及
通过溅射、喷涂或电镀导电材料,在所述第一电组件和第二电组件上形成第二屏蔽层。
2.根据权利要求1所述的方法,还包括在所述第一屏蔽层和第二屏蔽层之间形成绝缘层。
3.根据权利要求2所述的方法,还包括通过喷射印刷来形成所述绝缘层。
4.根据权利要求1所述的方法,还包括:
在所述基板、第一电组件和第二电组件上沉积密封剂;以及
在所述密封剂的凹陷中形成所述第一屏蔽层。
5.根据权利要求1所述的方法,还包括直接在所述第一屏蔽层上形成所述第二屏蔽层。
6.根据权利要求1所述的方法,还包括在形成所述第一屏蔽层之后且在形成所述第二屏蔽层之前单片化所述基板。
7.一种制造半导体器件的方法,包括:
提供基板;
在所述基板上设置电组件;
在所述基板上设置导电柱;
在所述电组件和导电柱上形成第一屏蔽层;以及
在所述第一屏蔽层上形成第二屏蔽层。
8.根据权利要求7所述的方法,还包括在所述第一屏蔽层和第二屏蔽层之间形成绝缘层。
9.根据权利要求7所述的方法,还包括通过喷射印刷来形成所述第一屏蔽层。
10.根据权利要求9所述的方法,还包括通过溅射、喷涂或电镀来形成所述第二屏蔽层。
11.一种半导体器件,包括:
基板;
设置在所述基板上的电组件;
设置在所述基板上的导电柱;
形成在所述电组件和导电柱上的第一屏蔽层;以及
形成在所述第一屏蔽层上的第二屏蔽层。
12.根据权利要求11所述的半导体器件,还包括形成在所述第一屏蔽层和第二屏蔽层之间的绝缘层。
13.根据权利要求11所述的半导体器件,其中,所述第一屏蔽层选择性地形成在所述电组件和导电柱上。
14.根据权利要求13所述的半导体器件,其中,所述第二屏蔽层是共形屏蔽层。
15.根据权利要求11所述的半导体器件,其中,所述第二屏蔽层在所述基板的侧表面上延伸。
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