CN117278004A - Comparison circuit - Google Patents
Comparison circuit Download PDFInfo
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- CN117278004A CN117278004A CN202311551061.2A CN202311551061A CN117278004A CN 117278004 A CN117278004 A CN 117278004A CN 202311551061 A CN202311551061 A CN 202311551061A CN 117278004 A CN117278004 A CN 117278004A
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- 230000010076 replication Effects 0.000 claims abstract description 65
- 238000000034 method Methods 0.000 abstract description 13
- 230000008569 process Effects 0.000 abstract description 11
- 230000008570 general process Effects 0.000 abstract description 7
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- 238000010586 diagram Methods 0.000 description 8
- 238000010276 construction Methods 0.000 description 4
- 238000012938 design process Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/22—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral
- H03K5/24—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude
- H03K5/2472—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude using field effect transistors
- H03K5/2481—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude using field effect transistors with at least one differential stage
Abstract
The invention provides a comparison circuit, and relates to the technical field of circuits. The comparison circuit includes: the device comprises a first current replication module, a first low-voltage power device, a second low-voltage power device, a first high-voltage power device, a second high-voltage power device, a third high-voltage power device, a fourth high-voltage power device, a first voltage output module, a second voltage output module and a comparator; the input end of the third high-voltage power device and the input end of the fourth high-voltage power device are both connected with a preset high-voltage power supply, and the output end of the third high-voltage power device and the output end of the fourth high-voltage power device are respectively connected with the control end of the first high-voltage power device and the control end of the second high-voltage power device through a first resistor and a second resistor. The first high-voltage power device and the second high-voltage power device are all designed by adopting a general process, special process design is not needed, and the comparison circuit is more convenient and flexible to construct by adding the third high-voltage power device and the fourth high-voltage power device.
Description
Technical Field
The invention relates to the technical field of circuits, in particular to a comparison circuit.
Background
In high voltage systems, it is necessary to implement the voltage comparison function over a very wide voltage range, so the comparator needs to implement a very wide common mode input range and high voltage input. Research into high voltage comparators has also received extensive attention.
In the related art, among a plurality of transistors in a comparison circuit, a part of transistors need to be manufactured by a special process to ensure that a target transistor connected with the part of transistors in the comparison circuit works in a saturation region, and then the comparison circuit can work normally.
However, in the related art, a part of transistors needs to be manufactured by a special process, which is inconvenient for the construction of the comparison circuit.
Disclosure of Invention
The present invention is directed to providing a comparator circuit for solving the above-mentioned problems of the related art.
In order to achieve the above purpose, the technical scheme adopted by the embodiment of the invention is as follows:
in a first aspect, an embodiment of the present invention provides a comparison circuit, including: the device comprises a first current replication module, a first low-voltage power device, a second low-voltage power device, a first high-voltage power device, a second high-voltage power device, a third high-voltage power device, a fourth high-voltage power device, a first voltage output module, a second voltage output module and a comparator;
the input end of the first current replication module is connected with a preset high-voltage power supply, the first output end of the first current replication module is grounded through a preset current source, and the second output end of the first current replication module is respectively connected with the input end of the first low-voltage power device and the input end of the second low-voltage power device;
the control end of the first low-voltage power device and the control end of the second low-voltage power device are two input ends of the comparison circuit and are respectively used for receiving a first input voltage and a second input voltage; the output end of the first low-voltage power device and the output end of the second low-voltage power device are respectively connected with the input end of the first high-voltage power device and the input end of the second high-voltage power device, and the output end of the first high-voltage power device and the output end of the second high-voltage power device are respectively connected with the input end of the first voltage output module and the input end of the second voltage output module; the output end of the first voltage output module and the output end of the second voltage output module are respectively connected with two input ends of the comparator, and the output end of the comparator is the output end of the comparison circuit so as to output a comparison result; the control end of the first voltage output module and the control end of the second voltage output module are respectively connected with a preset low-voltage power supply;
the input end of the third high-voltage power device and the input end of the fourth high-voltage power device are both connected with the preset high-voltage power supply, the output end of the third high-voltage power device and the output end of the fourth high-voltage power device are respectively connected with the control end of the first high-voltage power device and the control end of the second high-voltage power device through a first resistor and a second resistor, and the control end of the third high-voltage power device and the control end of the fourth high-voltage power device are respectively used for receiving the first input voltage and the second input voltage.
Optionally, the first current replication module includes: the input end of the first current mirror is the input end of the first current replication module; the output end of the fifth high-voltage power device and the output end of the sixth high-voltage power device in the first current mirror are respectively a first output end and a second output end of the first current replication module.
Optionally, the comparing circuit further includes: a third resistor and a fourth resistor;
the control end of the first high-voltage power device is grounded through the third resistor, and the control end of the second high-voltage power device is grounded through the fourth resistor.
Optionally, the comparing circuit further includes: a second current replication module; the three input ends of the second current replication module are all connected with the third output end of the first current replication module, the three first output ends of the second current replication module are respectively connected with the third output end of the first current replication module, the control end of the first high-voltage power device and the control end of the second high-voltage power device, and the three second output ends of the second current replication module are all grounded.
Optionally, the first current replication module further includes: a fifth high-voltage power device, a sixth high-voltage power device and a seventh high-voltage power device, wherein the fifth high-voltage power device and the sixth high-voltage power device form a first current mirror, and the fifth high-voltage power device and the seventh high-voltage power device form a second current mirror;
the input end of the second current mirror and the input end of the first current mirror are both input ends of the first current replication module, the output end of the fifth high-voltage power device and the output end of the sixth high-voltage power device in the first current mirror are respectively a first output end and a second output end of the first current replication module, and the output end of the seventh high-voltage power device in the second current mirror is a third output end of the first current replication module.
Optionally, the first voltage output module includes: an eighth high voltage power device and a fifth resistor;
the input end of the eighth high-voltage power device is the input end of the first voltage output module, the control end of the eighth high-voltage power device is the control end of the first voltage output module, the output end of the eighth high-voltage power device is the output end of the first voltage output module, and the output end of the eighth high-voltage power device is grounded through the fifth resistor.
Optionally, the second voltage output module includes: a ninth high voltage power device and a sixth resistor;
the input end of the ninth high-voltage power device is the input end of the second voltage output module, the control end of the ninth high-voltage power device is the control end of the second voltage output module, the output end of the ninth high-voltage power device is the output end of the second voltage output module, and the output end of the ninth high-voltage power device is grounded through the sixth resistor.
Optionally, the comparing circuit further includes: a first diode and a second diode;
the positive electrode of the first diode and the positive electrode of the second diode are connected with the second output end of the first current replication module, and the negative electrode of the first diode and the negative electrode of the second diode are respectively connected with the input end of the first low-voltage power device and the input end of the second low-voltage power device.
Optionally, the comparing circuit further includes: a third diode and a fourth diode;
the cathode of the third diode and the cathode of the fourth diode are respectively connected with the cathode of the first diode and the cathode of the second diode, and the anode of the third diode and the anode of the fourth diode are respectively connected with the input end of the first low-voltage power device and the input end of the second low-voltage power device.
Optionally, the comparing circuit further includes: a seventh resistor and an eighth resistor;
the control end of the third high-voltage power device is connected with the first input voltage through the seventh resistor; and the control end of the fourth high-voltage power device is connected with the second input voltage through the eighth resistor.
The beneficial effects of the invention are as follows: an embodiment of the present application provides a comparison circuit, including: the device comprises a first current replication module, a first low-voltage power device, a second low-voltage power device, a first high-voltage power device, a second high-voltage power device, a third high-voltage power device, a fourth high-voltage power device, a first voltage output module, a second voltage output module and a comparator; the input end of the third high-voltage power device and the input end of the fourth high-voltage power device are both connected with a preset high-voltage power supply, and the output end of the third high-voltage power device and the output end of the fourth high-voltage power device are respectively connected with the control end of the first high-voltage power device and the control end of the second high-voltage power device through a first resistor and a second resistor. The first high-voltage power device and the second high-voltage power device are all of a general process design, special process design is not needed, and the first low-voltage power device and the second low-voltage power device can work in a saturation region by adding the third high-voltage power device and the fourth high-voltage power device, so that the construction of a comparison circuit is more convenient and flexible.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic diagram of a comparison circuit according to an embodiment of the present application;
fig. 2 is a schematic diagram of a second structure of a comparison circuit according to an embodiment of the present application;
fig. 3 is a schematic diagram III of a comparison circuit according to an embodiment of the present application;
fig. 4 is a schematic diagram of a comparison circuit according to an embodiment of the present application.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention.
Thus, the following detailed description of the embodiments of the present application, as provided in the accompanying drawings, is not intended to limit the scope of the application, as claimed, but is merely representative of selected embodiments of the application. All other embodiments, which can be made by one of ordinary skill in the art based on the embodiments herein without making any inventive effort, are intended to be within the scope of the present application.
In the description of the present application, it should be noted that, if the azimuth or positional relationship indicated by the terms "upper", "lower", etc. appears, the azimuth or positional relationship is based on that shown in the drawings, or is the azimuth or positional relationship that is commonly put when the product of the application is used, it is merely for convenience of describing the present application and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific azimuth, be configured and operated in a specific azimuth, and therefore should not be construed as limiting the present application.
Furthermore, the terms first, second and the like in the description and in the claims and in the above-described figures, are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that the embodiments of the invention described herein may be implemented in sequences other than those illustrated or otherwise described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
It should be noted that, without conflict, features in embodiments of the present application may be combined with each other.
Fig. 1 is a schematic diagram of a comparison circuit according to an embodiment of the present application, as shown in fig. 1, the comparison circuit includes: a first current replication module 10, a first low voltage power device 11, a second low voltage power device 12, a first high voltage power device 13, a second high voltage power device 14, a third high voltage power device 15, a fourth high voltage power device 16, a first voltage output module 17, a second voltage output module 18, and a comparator 19;
the input end of the first current replication module 10 is connected with a preset high-voltage power supply 20, the first output end of the first current replication module 10 is grounded through a preset current source 21, and the second output end of the first current replication module 10 is respectively connected with the input end of the first low-voltage power device 11 and the input end of the second low-voltage power device 12;
the control end of the first low-voltage power device 11 and the control end of the second low-voltage power device 12 are two input ends of a comparison circuit and are respectively used for receiving a first input voltage Vin1 and a second input voltage Vin2; the output end of the first low-voltage power device 11 and the output end of the second low-voltage power device 12 are respectively connected with the input end of the first high-voltage power device 13 and the input end of the second high-voltage power device 14, and the output end of the first high-voltage power device 13 and the output end of the second high-voltage power device 14 are respectively connected with the input end of the first voltage output module 17 and the input end of the second voltage output module 18; the output end of the first voltage output module 17 and the output end of the second voltage output module 18 are respectively connected with two input ends of the comparator 19, and the output end of the comparator 19 is the output end of the comparison circuit so as to output a comparison result; the control end of the first voltage output module 17 and the control end of the second voltage output module 18 are respectively connected with a preset low-voltage power supply;
the input end of the third high-voltage power device 15 and the input end of the fourth high-voltage power device 16 are both connected with a preset high-voltage power supply, the output end of the third high-voltage power device 15 and the output end of the fourth high-voltage power device 16 are respectively connected with the control end of the first high-voltage power device 13 and the control end of the second high-voltage power device 14 through a first resistor R1 and a second resistor R2, and the control end of the third high-voltage power device 15 and the control end of the fourth high-voltage power device 16 are respectively used for receiving a first input voltage Vin1 and a second input voltage Vin2.
The power devices in the embodiments of the present application may be MOS (Metal-Oxide-Semiconductor Field-Effect Transistor, MOSFET, metal-Oxide semiconductor field effect transistor) tubes, where the first low-voltage power device 11, the second low-voltage power device 12, the first high-voltage power device 13, and the second high-voltage power device 14 may be P-type MOS tubes; the third high-voltage power device 15 and the fourth high-voltage power device 16 may be N-type MOS transistors.
In order to make the comparison circuit operate normally, the first low-voltage power device 11 and the second low-voltage power device 12 need to operate in a saturation region. In the related art, the third high-voltage power device 15 and the fourth high-voltage power device 16 are not present in the comparison circuit, and the first high-voltage power device 13 and the second high-voltage power device 14 need to be designed by using a special process, so that the characteristic that the threshold voltage is close to 0V (volt) is realized, and the first low-voltage power device 11 and the second low-voltage power device 12 are ensured to work in a saturation region, so that the comparison circuit works normally.
For example, the first low-voltage power device 11 is operated in the saturation region, and needs to meet the requirement VGS-VTH < VDS, where VGS is the voltage of the gate with respect to the source, VTH is the threshold voltage, and VDS is the voltage of the drain with respect to the source. That is, vin1+|vth13| < Vin1+|vth11|, where Vin1 is the first input voltage, |vth13| is the threshold voltage of the first high-voltage power device 13, and|vth 11| is the threshold voltage of the first low-voltage power device 11. If the first high-voltage power device 13 is designed by adopting a general process, the requirements of vjn+|vjn+|vjn11| cannot be met, and the first low-voltage power device 11 cannot work in a saturation region. Based on similar principles, if the second high voltage power device 14 is designed using a common process, the second low voltage power device 12 cannot operate in the saturation region. That is, the related art needs to design the first high voltage power device 13 and the second high voltage power device 14 by using a special process, which is inconvenient for the construction of the comparator 19 circuit.
It should be noted that, in the embodiments of the present application, all high-voltage power devices and low-voltage power devices are all designed by a common design process, and no special process design is required. The embodiment of the application provides a comparison circuit which is a comparator based on an integrated circuit and a general process design.
In the embodiment of the present application, the third high voltage power device 15 and the fourth high voltage power device 16 are added compared to the prior art. By adopting the third high voltage power device 15 and the first resistor, and reducing the first input voltage, the gate voltage of the third high voltage power device 15 is:
Vin1-VTH15-ibias×R1；
where Vin1 is a first input voltage, VTH15 is a threshold voltage of the third high-voltage power device 15, R1 is a first resistor, and ibias is a bias current. The gate voltage of the third high voltage power device 15 provides a bias voltage for the third high voltage power device 15; for example, the first low-voltage power device 11 operates in the saturation region, and the requirements are as follows:
VGS-VTH < VDS, equivalent is: VG-VS-VTH < VD-VS;
where VG is the gate voltage, VS is the source voltage, VTH is the threshold voltage, and VD is the drain voltage;
VS is simultaneously cancelled for both sides of the above equation:
VG-VTH<VD；
that is, vin1-VTH15-ibias R1+|VTH13| < Vin1+|VTH11|;
where Vin1 is a first input voltage, VTH15 is a threshold voltage of the third high-voltage power device 15, R1 is a first resistor, ibias is a bias current, VTH13 is a threshold voltage of the first high-voltage power device 13, and VTH11 is a threshold voltage of the first low-voltage power device 11.
As can be seen from the above, even if the first high voltage power device 13 is designed by a general process, the requirement VGS-VTH < VDS can be satisfied after the third high voltage power device 15 is added, so that the first low voltage power device 11 operates in the saturation region. Based on a similar principle, after adding the fourth high voltage power device 16, even if the second high voltage power device 14 is designed by a general process, the requirement VGS-VTH < VDS can be satisfied, so that the second low voltage power device 12 operates in the saturation region.
In summary, the embodiment of the present application provides a comparison circuit, including: a first current replication module 10, a first low voltage power device 11, a second low voltage power device 12, a first high voltage power device 13, a second high voltage power device 14, a third high voltage power device 15, a fourth high voltage power device 16, a first voltage output module 17, a second voltage output module 18, and a comparator 19; the input end of the third high-voltage power device 15 and the input end of the fourth high-voltage power device 16 are both connected with a preset high-voltage power supply, and the output end of the third high-voltage power device 15 and the output end of the fourth high-voltage power device 16 are respectively connected with the control end of the first high-voltage power device 13 and the control end of the second high-voltage power device 14 through a first resistor and a second resistor. The first high-voltage power device 13 and the second high-voltage power device 14 are all designed by adopting a general process, special process design is not needed, and the first low-voltage power device 11 and the second low-voltage power device 12 can work in a saturation region by adding the third high-voltage power device 15 and the fourth high-voltage power device 16, so that the construction of a comparison circuit is more convenient and flexible.
In the embodiment of the present application, the input end of the first low-voltage power device 11, the input end of the second low-voltage power device 12, the input end of the first high-voltage power device 13, and the input end of the second high-voltage power device 14 are all sources; the input end of the third high-voltage power device 15 and the input end of the fourth high-voltage power device 16 are drain electrodes;
the control end of the first low-voltage power device 11, the control end of the second low-voltage power device 12, the control end of the first high-voltage power device 13, the control end of the second high-voltage power device 14, the control end of the third high-voltage power device 15 and the control end of the fourth high-voltage power device 16 are all grid electrodes;
the output end of the first low-voltage power device 11, the output end of the second low-voltage power device 12, the output end of the first high-voltage power device 13 and the output end of the second high-voltage power device 14 are drain electrodes; the output terminal of the third high voltage power device 15 and the output terminal of the fourth high voltage power device 16 are both sources.
The first low-voltage power device 11 and the second low-voltage power device 12 both adopt low-voltage P-type MOS transistors to optimize the matching characteristics of the comparator 19, and the low-voltage transistors generally have better matching characteristics than the high-voltage transistors to reduce the input offset voltage of the comparator 19.
Fig. 2 is a schematic diagram of a second comparing circuit according to the embodiment of the present application, as shown in fig. 2, the first current replication module 10 includes: a first current mirror composed of a fifth high-voltage power device 22 and a sixth high-voltage power device 23, wherein the input end of the first current mirror is the input end of the first current replication module 10; the output terminal of the fifth high voltage power device 22 and the output terminal of the sixth high voltage power device 23 in the first current mirror are the first output terminal and the second output terminal of the first current replication module 10, respectively.
The fifth high-voltage power device 22 and the sixth high-voltage power device 23 may be P-type MOS transistors; the drain electrode of the fifth high-voltage power device 22 is grounded through a preset current source, the gate electrode of the fifth high-voltage power device 22 is connected with the drain electrode, the gate electrode of the fifth high-voltage power device 22 is connected with the gate electrode of the sixth high-voltage power device 23, and the source electrode of the fifth high-voltage power device 22 and the source electrode of the sixth high-voltage power device 23 are both connected with the preset high-voltage power.
The drain electrode of the fifth high voltage power device 22 is the output end of the fifth high voltage power device 22, i.e. the first output end of the first current replication module 10; the drain of the sixth high voltage power device 23 is the output terminal of the sixth high voltage power device 23, i.e. the second output terminal of the first current replication module 10.
Optionally, as shown in fig. 2, the comparing circuit further includes: a third resistor R3 and a fourth resistor R4;
the control terminal of the first high-voltage power device 13 is grounded through a third resistor, and the control terminal of the second high-voltage power device 14 is grounded through a fourth resistor.
Optionally, the comparing circuit further includes: a second current replication module; the three input ends of the second current replication module are all connected with the third output end of the first current replication module 10, the three first output ends of the second current replication module are respectively connected with the third output end of the first current replication module 10, the control end of the first high-voltage power device 13 and the control end of the second high-voltage power device 14, and the three second output ends of the second current replication module are all grounded.
Wherein, the fifth high voltage power device 22, the sixth high voltage power device 23 and the seventh high voltage power device have duplicated currents. In the embodiment of the present application, both the first current replication module 10 and the second current replication module may perform current replication.
Optionally, the first current replication module 10 further includes: the fifth high-voltage power device 22, the sixth high-voltage power device 23 and the seventh high-voltage power device, wherein the fifth high-voltage power device 22 and the sixth high-voltage power device 23 form a first current mirror, and the fifth high-voltage power device 22 and the seventh high-voltage power device form a second current mirror;
the input end of the second current mirror and the input end of the first current mirror are both the input end of the first current replication module 10, the output end of the fifth high-voltage power device 22 and the output end of the sixth high-voltage power device 23 in the first current mirror are respectively the first output end and the second output end of the first current replication module 10, and the output end of the seventh high-voltage power device in the second current mirror is the third output end of the first current replication module 10.
Fig. 3 is a schematic diagram III of a structure of a comparison circuit according to an embodiment of the present application, as shown in fig. 3, where the comparison circuit further includes: a seventh high-voltage power device 24, a tenth high-voltage power device 25, an eleventh high-voltage power device 26, and a twelfth high-voltage power device 27;
the seventh high-voltage power device 24 may be a P-type MOS transistor, and the tenth high-voltage power device 25, the eleventh high-voltage power device 26, and the twelfth high-voltage power device 27 may be N-type MOS transistors. The drain of the seventh high voltage power device 24 may be the output terminal of the seventh high voltage power device 24.
As shown in fig. 3, the gate of the seventh high-voltage power device 24 is connected to the gate of the fifth high-voltage power device 22, the source of the seventh high-voltage power device 24 is connected to the preset high-voltage power device, and the drain of the seventh high-voltage power device 24 is connected to the gate of the tenth high-voltage power device 25, the gate of the eleventh high-voltage power device 26, and the gate of the twelfth high-voltage power device 27, respectively; the drain electrode of the tenth high-voltage power device 25 is connected with the drain electrode of the seventh high-voltage power device 24; the drain electrode of the eleventh high-voltage power device 26 is connected with the gate electrode of the first high-voltage power device 13, and the drain electrode of the twelfth high-voltage power device 27 is connected with the gate electrode of the second high-voltage power device 14; the source of the tenth high voltage power device 25, the source of the eleventh high voltage power device 26, and the source of the twelfth high voltage power device 27 are all grounded.
It should be noted that, the three input terminals of the second current replication module include: a gate of the tenth high voltage power device 25, a gate of the eleventh high voltage power device 26, and a gate of the twelfth high voltage power device 27; three first outputs of the second current replica module, comprising: a drain of the tenth high voltage power device 25, a drain of the eleventh high voltage power device 26, and a drain of the twelfth high voltage power device 27; the three second output terminals of the second current replication module include: a source of the tenth high voltage power device 25, a source of the eleventh high voltage power device 26, and a source of the twelfth high voltage power device 27.
Optionally, the first voltage output module 17 includes: an eighth high voltage power device 28 and a fifth resistor R5;
the input end of the eighth high-voltage power device 28 is the input end of the first voltage output module 17, the control end of the eighth high-voltage power device 28 is the control end of the first voltage output module 17, the output end of the eighth high-voltage power device 28 is the output end of the first voltage output module 17, and the output end of the eighth high-voltage power device 28 is grounded through the fifth resistor R5.
The eighth high-voltage power device 28 may be an N-type MOS transistor, the input end of the eighth high-voltage power device 28 is a drain, the control end of the eighth high-voltage power device 28 is a gate, and the output end of the eighth high-voltage power device 28 is a source.
As shown in fig. 2 and 3, the drain of the eighth high voltage power device 28 is connected to the drain of the first high voltage power device 13, the gate of the eighth high voltage power device 28 is connected to the preset low voltage power source 30, and the source of the eighth high voltage power device 28 is grounded through the fifth resistor R5.
Optionally, the second voltage output module 18 includes: a ninth high voltage power device 29 and a sixth resistor R6;
the input end of the ninth high-voltage power device 29 is the input end of the second voltage output module 18, the control end of the ninth high-voltage power device 29 is the control end of the second voltage output module 18, the output end of the ninth high-voltage power device 29 is the output end of the second voltage output module 18, and the output end of the ninth high-voltage power device 29 is grounded through a sixth resistor.
The ninth high-voltage power device 29 may be an N-type MOS transistor, the input end of the ninth high-voltage power device 29 is a drain, the control end of the ninth high-voltage power device 29 is a gate, and the output end of the ninth high-voltage power device 29 is a source.
As shown in fig. 2 and 3, the drain of the ninth high-voltage power device 29 is connected to the drain of the second high-voltage power device 14, the gate of the ninth high-voltage power device 29 is connected to the preset low-voltage power source 30, and the source of the ninth high-voltage power device 29 is grounded through the sixth resistor R6.
In the embodiment of the present application, the source of the ninth high-voltage power device 29 and the source of the eighth high-voltage power device 28 may output a differential current, which is converted into a differential voltage through the fifth resistor R5 and the sixth resistor R6, the differential voltage is used as an input of the comparator 19, and the comparator 19 may output a comparison result.
Optionally, the comparing circuit further includes: a first diode D1 and a second diode D2;
the positive pole of the first diode D1 and the positive pole of the second diode D2 are both connected with the second output end of the first current replication module 10, and the negative pole of the first diode D1 and the negative pole of the second diode D2 are respectively connected with the input end of the first low-voltage power device 11 and the input end of the second low-voltage power device 12.
Fig. 4 is a schematic diagram of a structure of a comparison circuit provided in this embodiment, in some embodiments, the second output end of the first current replication module 10 is a drain electrode of the sixth high voltage power device 23, as shown in fig. 3 and 4, the positive electrode of the first diode D1 and the positive electrode of the second diode D2 are both connected with the drain electrode of the sixth high voltage power device 23, and the negative electrode of the first diode D1 and the negative electrode of the second diode D2 are respectively connected with the source electrode of the first low voltage power device 11 and the source electrode of the second low voltage power device 12.
Optionally, the comparing circuit further includes: a third diode D3 and a fourth diode D4;
as shown in fig. 3 and 4, the cathode of the third diode D3 and the cathode of the fourth diode D4 are respectively connected to the cathode of the first diode D1 and the cathode of the second diode D2, and the anode of the third diode D3 and the anode of the fourth diode D4 are respectively connected to the input terminal of the first low-voltage power device 11 and the input terminal of the second low-voltage power device 12.
The input end of the first low-voltage power device 11 is a source electrode of the first low-voltage power device 11, and the input end of the second low-voltage power device 12 is a source electrode of the second low-voltage power device 12.
Optionally, the comparing circuit further includes: a seventh resistor R7 and an eighth resistor R8;
as shown in fig. 3 and 4, the control terminal of the third high voltage power device 15 is connected to the first input voltage Vin1 through a seventh resistor R7; the control terminal of the fourth high-voltage power device 16 is connected to the second input voltage Vin2 through an eighth resistor R8.
The control end of the third high-voltage power device 15 is a gate of the third high-voltage power device 15, and the control end of the fourth high-voltage power device 16 is a gate of the fourth high-voltage power device 16.
As shown in fig. 3 and 4, the comparison circuit further includes: a ninth resistor R9 and a tenth resistor R10;
the drain electrode of the third high-voltage power device 15 is connected with a preset high-voltage power supply through a ninth resistor R9, and the drain electrode of the fourth high-voltage power device 16 is connected with the preset high-voltage power supply through a tenth resistor R10.
The embodiment of the application provides a comparison circuit, which is based on a general integrated circuit design process, is convenient to construct and has the characteristics of high voltage, high precision and wide comparison range.
The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention, but various modifications and variations can be made to the present invention by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A comparison circuit, comprising: the device comprises a first current replication module, a first low-voltage power device, a second low-voltage power device, a first high-voltage power device, a second high-voltage power device, a third high-voltage power device, a fourth high-voltage power device, a first voltage output module, a second voltage output module and a comparator;
the input end of the first current replication module is connected with a preset high-voltage power supply, the first output end of the first current replication module is grounded through a preset current source, and the second output end of the first current replication module is respectively connected with the input end of the first low-voltage power device and the input end of the second low-voltage power device;
the control end of the first low-voltage power device and the control end of the second low-voltage power device are two input ends of the comparison circuit and are respectively used for receiving a first input voltage and a second input voltage; the output end of the first low-voltage power device and the output end of the second low-voltage power device are respectively connected with the input end of the first high-voltage power device and the input end of the second high-voltage power device, and the output end of the first high-voltage power device and the output end of the second high-voltage power device are respectively connected with the input end of the first voltage output module and the input end of the second voltage output module; the output end of the first voltage output module and the output end of the second voltage output module are respectively connected with two input ends of the comparator, and the output end of the comparator is the output end of the comparison circuit so as to output a comparison result; the control end of the first voltage output module and the control end of the second voltage output module are respectively connected with a preset low-voltage power supply;
the input end of the third high-voltage power device and the input end of the fourth high-voltage power device are both connected with the preset high-voltage power supply, the output end of the third high-voltage power device and the output end of the fourth high-voltage power device are respectively connected with the control end of the first high-voltage power device and the control end of the second high-voltage power device through a first resistor and a second resistor, and the control end of the third high-voltage power device and the control end of the fourth high-voltage power device are respectively used for receiving the first input voltage and the second input voltage.
2. The circuit of claim 1, wherein the first current replication module comprises: the input end of the first current mirror is the input end of the first current replication module; the output end of the fifth high-voltage power device and the output end of the sixth high-voltage power device in the first current mirror are respectively a first output end and a second output end of the first current replication module.
3. The circuit according to claim 1 or 2, wherein the comparison circuit further comprises: a third resistor and a fourth resistor;
the control end of the first high-voltage power device is grounded through the third resistor, and the control end of the second high-voltage power device is grounded through the fourth resistor.
4. The circuit of claim 1, wherein the comparison circuit further comprises: a second current replication module; the three input ends of the second current replication module are all connected with the third output end of the first current replication module, the three first output ends of the second current replication module are respectively connected with the third output end of the first current replication module, the control end of the first high-voltage power device and the control end of the second high-voltage power device, and the three second output ends of the second current replication module are all grounded.
5. The circuit of claim 4, wherein the first current replication module further comprises: a fifth high-voltage power device, a sixth high-voltage power device and a seventh high-voltage power device, wherein the fifth high-voltage power device and the sixth high-voltage power device form a first current mirror, and the fifth high-voltage power device and the seventh high-voltage power device form a second current mirror;
the input end of the second current mirror and the input end of the first current mirror are both input ends of the first current replication module, the output end of the fifth high-voltage power device and the output end of the sixth high-voltage power device in the first current mirror are respectively a first output end and a second output end of the first current replication module, and the output end of the seventh high-voltage power device in the second current mirror is a third output end of the first current replication module.
6. The circuit of claim 1, wherein the first voltage output module comprises: an eighth high voltage power device and a fifth resistor;
the input end of the eighth high-voltage power device is the input end of the first voltage output module, the control end of the eighth high-voltage power device is the control end of the first voltage output module, the output end of the eighth high-voltage power device is the output end of the first voltage output module, and the output end of the eighth high-voltage power device is grounded through the fifth resistor.
7. The circuit of claim 1, wherein the second voltage output module comprises: a ninth high voltage power device and a sixth resistor;
the input end of the ninth high-voltage power device is the input end of the second voltage output module, the control end of the ninth high-voltage power device is the control end of the second voltage output module, the output end of the ninth high-voltage power device is the output end of the second voltage output module, and the output end of the ninth high-voltage power device is grounded through the sixth resistor.
8. The circuit of claim 1, wherein the comparison circuit further comprises: a first diode and a second diode;
the positive electrode of the first diode and the positive electrode of the second diode are connected with the second output end of the first current replication module, and the negative electrode of the first diode and the negative electrode of the second diode are respectively connected with the input end of the first low-voltage power device and the input end of the second low-voltage power device.
9. The circuit of claim 8, wherein the comparison circuit further comprises: a third diode and a fourth diode;
the cathode of the third diode and the cathode of the fourth diode are respectively connected with the cathode of the first diode and the cathode of the second diode, and the anode of the third diode and the anode of the fourth diode are respectively connected with the input end of the first low-voltage power device and the input end of the second low-voltage power device.
10. The circuit of claim 1, wherein the comparison circuit further comprises: a seventh resistor and an eighth resistor;
the control end of the third high-voltage power device is connected with the first input voltage through the seventh resistor; and the control end of the fourth high-voltage power device is connected with the second input voltage through the eighth resistor.
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