CN117276300A - Magnetic conductive adhesive layer, chip bonding structure, chip transferring method and repairing method - Google Patents
Magnetic conductive adhesive layer, chip bonding structure, chip transferring method and repairing method Download PDFInfo
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- CN117276300A CN117276300A CN202210667093.8A CN202210667093A CN117276300A CN 117276300 A CN117276300 A CN 117276300A CN 202210667093 A CN202210667093 A CN 202210667093A CN 117276300 A CN117276300 A CN 117276300A
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- conductive adhesive
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- 239000012790 adhesive layer Substances 0.000 title claims abstract description 117
- 238000000034 method Methods 0.000 title claims abstract description 43
- 239000002245 particle Substances 0.000 claims abstract description 41
- 239000004005 microsphere Substances 0.000 claims abstract description 37
- 229910000679 solder Inorganic materials 0.000 claims abstract description 31
- 239000000463 material Substances 0.000 claims abstract description 24
- 239000000853 adhesive Substances 0.000 claims abstract description 21
- 230000001070 adhesive effect Effects 0.000 claims abstract description 21
- 239000003292 glue Substances 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims description 39
- 230000008439 repair process Effects 0.000 claims description 32
- 230000002159 abnormal effect Effects 0.000 claims description 26
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 23
- 230000004907 flux Effects 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 abstract description 20
- 238000003475 lamination Methods 0.000 abstract description 9
- 238000007711 solidification Methods 0.000 abstract description 5
- 230000008023 solidification Effects 0.000 abstract description 5
- 230000009471 action Effects 0.000 description 16
- 239000010410 layer Substances 0.000 description 11
- 238000004220 aggregation Methods 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000005476 soldering Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005424 photoluminescence Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Wire Bonding (AREA)
Abstract
The invention relates to a magnetic conductive adhesive layer, a chip bonding structure, a chip transferring method and a repairing method. A magnetic conductive adhesive layer comprising: a glue material; solder particles distributed in the glue material; the magnetic microspheres are distributed in the adhesive material. When the magnetic conductive adhesive layer is used for bonding the chip and the driving backboard, external heating or large pressure is not needed, the phenomenon of poor edge lamination of a bonding area caused by warp deformation and expansion coefficient difference is effectively avoided, and the bonding yield of the chip is improved. In addition, the magnetic microspheres generate heat, so that the problem of solidification of the adhesive material in the bonding surrounding area caused by heating is avoided, and the problem of bonding failure of a subsequent chip and a driving backboard is avoided.
Description
Technical Field
The invention relates to the technical field of mass transfer, in particular to a magnetic conductive adhesive layer, a chip bonding structure, a chip transfer method and a repair method.
Background
In the huge transfer scheme of the chip, the bonding of the chip and the driving backboard by using anisotropic conductive adhesive (Anisotropic Conductive Film, ACF) is a popular direct bonding scheme, on one hand, the process of manufacturing an Under Bump Metal (UBM) and evaporating solder on the driving backboard can be directly skipped by using the ACF, and meanwhile, the bonding of the chip and the driving backboard by using the ACF can be enhanced, so that the bonding stability of the chip and the driving backboard can be enhanced.
However, in the process of using the ACF in the chip display, because of the limitation of the pressure uniformity of the current pressing head, the warpage of the chip and the driving back plate, and the difference of thermal expansion coefficients (the larger the area is, the more uneven), when the pressure is too small, the bonding effect between the chip positioned at the edge of the bonding area and the ACF is not ideal, thereby causing the failure of ohmic contact with the driving back plate, and when the pressure is too large, the chip is broken; on the other hand, when three-color synthesis respectively representing Red Green Blue (RGB) is performed, the current ACF is easily cured after being subjected to multiple heating, and thus causes subsequent bonding failure.
Therefore, how to improve the bonding yield of the chip and further improve the transfer yield of the chip is a problem to be solved.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, an object of the present application is to provide a magnetic conductive adhesive layer, a chip bonding structure, a chip transferring method and a repairing method, which aim to improve the bonding yield of chips and further improve the transferring yield of chips.
The embodiment of the application provides a magnetism conductive adhesive layer, include: a glue material; solder particles distributed in the glue material; the magnetic microspheres are distributed in the adhesive material.
Compared with the common ACF, the magnetic conductive adhesive layer has the greatest advantage that the magnetic microspheres are arranged in the magnetic conductive adhesive layer. The magnetic microsphere can generate a large amount of heat under the alternating magnetic field with lower intensity, thereby realizing self-heating. Therefore, the magnetic conductive adhesive layer is used for bonding the chip and the driving backboard, the magnetic microspheres in the magnetic conductive adhesive layer can be quickly heated under the action of an alternating magnetic field, and the adhesive layer curing phenomenon in other areas caused by heat conduction can be reduced to a certain extent by a micron-sized heat source, so that the magnetic conductive adhesive layer in the bonding area is heated first, and solder particles around the chip electrode can be automatically gathered on the chip electrode under the action of interfacial tension, thereby realizing the electric connection between the chip and the driving backboard. Therefore, the electric connection between the chip and the driving backboard does not need to be heated or apply large pressure by the outside, the phenomenon of poor edge lamination of a bonding area caused by buckling deformation and expansion coefficient (Coefficient of Thermal Expansion, CTE) difference when the chip is bonded with the driving backboard is effectively avoided, and the bonding yield of the chip is improved. In addition, the magnetic microspheres generate heat, so that the problem of solidification of the adhesive material in the bonding surrounding area caused by heating is avoided, and the problem of bonding failure of a subsequent chip and a driving backboard is avoided.
Optionally, the solder particles have a particle size of 3 μm to 4 μm; the particle size of the magnetic microsphere is less than 1 μm.
Optionally, the magnetic conductive adhesive layer further comprises a soldering flux, and the soldering flux is positioned in the adhesive material.
The magnetic conductive adhesive layer can be quickly heated under the action of an alternating magnetic field, so that soldering flux in the magnetic conductive adhesive layer volatilizes, and meanwhile, solder particles are molten, and because of the micron particles suspended at a liquid-solid interface, the interfacial tension is far greater than the thermal movement force, and therefore, the solder particles around the chip electrode can be automatically gathered on the chip electrode under the action of the interfacial tension, so that the bonding between the chip and the driving backboard is realized. Therefore, the electric connection between the chip and the driving backboard is realized by self-aggregation of solder particles between the chip and the driving backboard, and external heating or large pressure application is not needed, so that the phenomenon of poor edge lamination of a bonding area caused by warp deformation and CTE difference when the chip is bonded with the driving backboard is effectively avoided, and the bonding yield of the chip is improved.
Optionally, the solder particles are uniformly distributed in at least a preset area of the glue material; the magnetic microspheres are uniformly distributed at least in a preset area of the adhesive material.
The solder particles and the magnetic microspheres are randomly and uniformly distributed in the adhesive material, and have good dispersibility and uniformity, so that the distribution states of the particles in a preset area (such as 50 μm or 50 μm range) are the same, and the stability of the electric connection between the chip and the driving backboard is further ensured.
Based on the same inventive concept, the application also provides a chip transfer method, which comprises the following steps: providing a growth substrate, wherein a chip is formed on one side surface of the growth substrate; providing a driving backboard; forming a magnetic conductive adhesive layer according to any one of the above schemes on one side surface of the driving back plate; bonding the growth substrate on the surface of the magnetic conductive adhesive layer far away from the driving backboard, and enabling the chip to be in contact with the magnetic conductive adhesive layer;
applying an alternating magnetic field at least in a bonding area where the chip is bonded with the magnetic conductive adhesive layer so as to electrically connect the chip in the bonding area with the driving backboard; the growth substrate is removed.
According to the chip transferring method, the chip is bonded with the driving backboard by utilizing the magnetic conductive adhesive layer, the magnetic microspheres in the magnetic conductive adhesive layer can be quickly heated under the action of an alternating magnetic field, and the adhesive layer curing phenomenon in other areas caused by heat conduction can be reduced to a certain extent by a micron-sized heat source, so that the magnetic conductive adhesive layer in the bonding area is heated first, and solder particles around the chip electrode can be automatically gathered on the chip electrode under the action of interfacial tension, so that the chip and the driving backboard are electrically connected. Therefore, the electric connection between the chip and the driving backboard is realized by self-aggregation of solder particles between the chip and the driving backboard, external heating or large pressure application is not needed, the phenomenon of poor edge lamination of a bonding area caused by buckling deformation and CTE difference when the chip is bonded with the driving backboard is effectively avoided, and the bonding yield of the chip is improved. In addition, as the magnetic microspheres heat themselves, the curing of the adhesive material in the surrounding area caused by heating of the pressure head on the traditional ACF is avoided, so that the problem of bonding failure of the follow-up chip and the driving backboard is avoided, and the transfer yield of the next batch of chips is ensured.
Optionally, a bonding pad is arranged on one side surface of the driving backboard; the magnetic conductive adhesive layer covers the surface of the driving backboard provided with the bonding pad and covers the bonding pad.
Optionally, a metal electrode is formed on a surface of the chip far away from the growth substrate, and after the chip is bonded on the surface of the magnetic conductive adhesive layer, the metal electrode is contacted with the magnetic conductive adhesive layer.
Optionally, after all the chips are bonded on the surface of the magnetic conductive adhesive layer away from the driving backboard and the chips are electrically connected with the driving backboard, the method further includes: and curing the magnetic conductive adhesive layer.
Based on the same inventive concept, the present application further provides a chip bonding structure, including: a drive back plate; the magnetic conductive adhesive layer according to any one of the above schemes, wherein the magnetic conductive adhesive layer covers one side surface of the driving back plate; and the chip is bonded on the surface of the magnetic conductive adhesive layer, which is far away from the driving backboard, and is electrically connected with the driving backboard through the magnetic conductive adhesive layer.
According to the chip bonding structure, the chip and the driving backboard are bonded by the magnetic conductive adhesive layer, and compared with a common ACF, the magnetic conductive adhesive layer is internally provided with the magnetic microspheres, and the magnetic microspheres can generate a large amount of heat under an alternating magnetic field with lower intensity, so that self-heating is realized. Therefore, in the chip bonding structure, the magnetic microspheres in the magnetic conductive adhesive layer can be quickly heated under the action of an alternating magnetic field, and the micro-scale heat source can reduce the solidification phenomenon of the adhesive layer in other areas caused by heat conduction to a certain extent, so that the magnetic conductive adhesive layer in the chip bonding area is heated first, and solder particles around the chip electrode can be automatically gathered on the chip electrode under the action of interfacial tension, thereby realizing the electric connection between the chip and the driving backboard. Therefore, in the chip bonding structure, the chip and the driving backboard are electrically connected without external heating or applying large pressure, so that the phenomenon of poor edge lamination of a bonding area caused by warp deformation and CTE difference when the chip is bonded with the driving backboard is effectively avoided, and the bonding yield of the chip is improved. In addition, the magnetic microspheres generate heat, so that the problem of solidification of the adhesive material in the bonding surrounding area caused by heating is avoided, and the problem of bonding failure of a subsequent chip and a driving backboard is avoided.
Based on the same inventive concept, the application also provides a chip repairing method, which comprises the following steps: providing the chip bonding structure according to any one of the above schemes, wherein in the chip bonding structure, the magnetic conductive adhesive layer bonds a plurality of chips away from the surface of the driving back plate; determining an abnormal chip existing in the plurality of chips, and removing the abnormal chip; bonding a repair chip to a chip repair area, wherein the chip repair area is an area formed after the abnormal chip is removed; and applying an alternating magnetic field at least in a bonding area where the repair chip is bonded with the magnetic conductive adhesive layer so as to electrically connect the repair chip with the driving backboard.
According to the chip repairing method, the chip is bonded with the driving backboard by utilizing the magnetic conductive adhesive layer, the magnetic microspheres are arranged in the magnetic conductive adhesive layer, a large amount of heat can be generated under the alternating magnetic field with lower intensity, so that the chip is bonded with the driving backboard, the chip is further tested, after the abnormal chip and the abnormal chip area where the abnormal chip is located are positioned, the abnormal chip is picked up and repaired, the repaired chip is bonded to the abnormal chip area, finally, the alternating magnetic field is applied in the bonding area where the repaired chip is bonded with the magnetic conductive adhesive layer, so that the repaired chip is electrically connected with the driving backboard, and the huge transfer repairing steps are reduced.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the description of the embodiments will be briefly introduced below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other embodiments of the drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a magnetic conductive adhesive layer according to an embodiment of the present application.
Fig. 2 is a flow chart of a chip transfer method according to another embodiment of the present application.
Fig. 3 is a schematic cross-sectional structure of a chip formed on a surface of a growth substrate in a chip transfer method according to another embodiment of the present application.
Fig. 4 is a schematic cross-sectional structure of a magnetic conductive adhesive layer formed on a surface of a side of a driving back plate in a chip transferring method according to another embodiment of the present application.
Fig. 5 is a schematic cross-sectional structure of a structure obtained after bonding a growth substrate and a magnetic conductive adhesive layer in a chip transfer method according to another embodiment of the present application.
Fig. 6 is a schematic cross-sectional structure of a structure obtained after a chip in a bonding area is electrically connected to a driving back plate in a chip transferring method according to another embodiment of the present application.
Fig. 7 is a schematic cross-sectional view of a structure obtained after removing a growth substrate in a chip transfer method according to another embodiment of the present application.
Fig. 8 is a flow chart of a method for repairing a chip according to another embodiment of the present application.
Fig. 9 is a schematic cross-sectional structure of a chip repairing method according to another embodiment of the present disclosure after a plurality of chips are bonded to a surface of a driving back plate.
Fig. 10 is a schematic cross-sectional view of a structure obtained after determining an abnormal chip existing in a plurality of chips in a chip repairing method according to another embodiment of the present application.
Fig. 11 is a schematic cross-sectional view of a structure obtained when an abnormal chip is removed in the method for repairing a chip according to another embodiment of the present application.
Fig. 12 is a schematic cross-sectional structure of a structure obtained by bonding a repair chip to a chip repair area and electrically connecting the repair chip to a driving back plate in a chip repair method according to another embodiment of the present disclosure.
Reference numerals illustrate:
010-a magnetic conductive adhesive layer; 011-glue material; 012-solder particles; 013-magnetic microspheres;
a growth substrate; 11-chip; 12-an exception chip; 13-repairing the chip; 130-chip repair area; a 111-epitaxial layer; 1121-a first metal electrode; 1122-a second metal electrode; 112-a metal electrode;
20-driving a backboard; 21-bonding pads;
30-alternating magnetic field;
40-transferring the substrate; 41-glue layer.
Detailed Description
In order to facilitate an understanding of the present application, a more complete description of the present application will now be provided with reference to the relevant figures. Preferred embodiments of the present application are shown in the accompanying drawings. This application may, however, be embodied in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment may be included in at least one embodiment of the present disclosure. The appearances of such phrases in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. Those of skill in the art will explicitly and implicitly appreciate that the embodiments described herein may be combined with other embodiments.
In the description of the embodiments of the present disclosure, the azimuth or positional relationship indicated by the technical terms "upper", "lower", "left", "right", etc., are based on the azimuth or positional relationship shown in the drawings, and are merely for convenience in describing the embodiments of the present disclosure and simplifying the description, rather than indicating or implying that the apparatus or element in question must have a specific azimuth, be configured and operated in a specific azimuth, and thus should not be construed as limiting the embodiments of the present disclosure.
In addition, the thickness of each layer and each region in the drawing are exaggerated for clarity in the drawing to clearly illustrate the relative positions between the layers and the distribution of the regions. When a portion expressed as a layer, film, region, plate, or the like is located "over" or "on" other portions, the expression includes not only the case where it is "directly over" the other portions but also the case where there is another layer in the middle.
In the huge transfer scheme of the chip, the bonding of the chip and the driving backboard by using anisotropic conductive adhesive (Anisotropic Conductive Film, ACF) is a popular direct bonding scheme, on one hand, the process of manufacturing an Under Bump Metal (UBM) and evaporating solder on the driving backboard can be directly skipped by using the ACF, and meanwhile, the bonding of the chip and the driving backboard by using the ACF can be enhanced, so that the bonding stability of the chip and the driving backboard can be enhanced.
But in ACF is used in the chip display process because of the current limitation of the downpress pressure uniformity, warpage of the growth substrate and the driving back plate, and thermal expansion coefficient difference (the larger the area, the more non-uniform); too small pressure, and the bonding effect of the chip positioned at the edge of the bonding area and the ACF is not ideal, so that ohmic contact failure with the driving backboard is caused, and the chip is broken due to too large pressure; on the other hand, when three-color synthesis respectively representing Red Green Blue (RGB) is performed, the current ACF is easily cured after being subjected to multiple heating, and thus causes subsequent bonding failure.
Therefore, how to improve the bonding yield of the chip and further improve the transfer yield of the chip is a problem to be solved.
Based on this, the present application intends to provide a solution to the above technical problem, the details of which will be explained in the following embodiments.
As shown in fig. 1, an embodiment of the present application provides a magnetic conductive adhesive layer 010, including: a glue material 011; solder particles 012 distributed in the paste 011; magnetic microspheres 013 are distributed in the gel 011.
Compared with the common ACF, the magnetic conductive adhesive layer 010 has the greatest advantage that the magnetic microspheres 013 are arranged in the magnetic conductive adhesive layer 010. The magnetic microsphere 013 is used for generating heat under an alternating magnetic field, thereby realizing self-heating.
Therefore, the magnetic conductive adhesive layer 010 is utilized to bond the chip and the driving backboard, the magnetic microsphere 013 in the magnetic conductive adhesive layer 010 can be quickly heated under the action of an alternating magnetic field, and the adhesive layer solidification phenomenon in other areas caused by heat conduction can be reduced to a certain extent by a micron-sized heat source, so that the magnetic conductive adhesive layer 010 in the bonding area is heated first, and solder particles 012 around the chip electrode can be automatically gathered on the chip electrode under the action of interfacial tension, thereby realizing the electric connection of the chip and the driving backboard. Therefore, the electric connection between the chip and the driving backboard does not need to be heated or apply large pressure by the outside, the phenomenon of poor edge lamination of a bonding area caused by buckling deformation and expansion coefficient (Coefficient of Thermal Expansion, CTE) difference when the chip is bonded with the driving backboard is effectively avoided, and the bonding yield of the chip is improved. In addition, as the magnetic microsphere 013 generates heat, the problem of curing the adhesive material in the bonding surrounding area caused by heating is avoided, and the problem of bonding failure of a subsequent chip and a driving backboard is avoided.
In some examples, the solder particles 012 have a particle size of 3 μm to 4 μm. The particle size of the magnetic microsphere 013 is less than 1 μm.
Alternatively, the solder particles 012 are irregularly spherical in shape.
Specifically, the particle diameter of the solder particles 012 may be 3 μm, 3.5 μm, 4 μm, or the like. The particle size of the magnetic microsphere 013 can be 0.25 μm, 0.5 μm, 0.75 μm or 1 μm, etc.
In some examples, the gel 011 may be an insulating resin.
Alternatively, the thickness of the gel 011 is 6 μm to 7 μm. For example, the thickness of the adhesive 011 may be 6 μm, 6.5 μm, 7 μm, or the like.
Optionally, the magnetically conductive adhesive layer further includes a flux (not shown) located within the adhesive 011.
The magnetic conductive adhesive layer 010 can be quickly heated under the action of an alternating magnetic field, so that soldering flux in the magnetic conductive adhesive layer volatilizes, and meanwhile, solder particles 012 are molten, and because of micron particles suspended at a liquid-solid interface, the interfacial tension is far greater than the thermal movement force, and therefore, the solder particles 012 around a chip electrode can be automatically gathered on the chip electrode under the action of the interfacial tension, so that the bonding between the chip and a driving backboard is realized. Therefore, the electric connection between the chip and the driving backboard is realized by self-aggregation of the solder particles 012 between the chip and the driving backboard, and no external heating or large pressure is needed, so that the phenomenon of poor edge lamination of a bonding area caused by warp deformation and CTE difference when the chip is bonded with the driving backboard is effectively avoided, and the bonding yield of the chip is improved.
In some examples, the solder particles 012 are uniformly distributed over at least a predetermined area of the paste 011; the magnetic microspheres 013 are uniformly distributed in at least a preset area of the adhesive 011.
Solder particles 012 and magnetic microspheres 013 are randomly and uniformly distributed in the adhesive 011, and have good dispersibility and uniformity, so that the distribution state of particles in a preset area (such as 50 μm or 50 μm range) is the same, and the stability of the electrical connection between the chip and the driving back plate is further ensured.
Referring to fig. 2, based on the same inventive concept, the present application further provides a chip transferring method, which includes the following steps:
s10: providing a growth substrate, wherein a chip is formed on one side surface of the growth substrate;
s20: providing a driving backboard;
s30: forming a magnetic conductive adhesive layer according to any one of the embodiments above on a side surface of the driving back plate;
s40: bonding the growth substrate on the surface of the magnetic conductive adhesive layer far away from the driving backboard, and enabling the chip to be in contact with the magnetic conductive adhesive layer;
s50: applying an alternating magnetic field at least in a bonding area where the chip is bonded with the magnetic conductive adhesive layer so as to electrically connect the chip in the bonding area with the driving backboard;
s60: the growth substrate is removed.
According to the chip transferring method, the chip is bonded with the driving backboard by utilizing the magnetic conductive adhesive layer, the magnetic microspheres in the magnetic conductive adhesive layer can be quickly heated under the action of an alternating magnetic field, and the adhesive layer curing phenomenon in other areas caused by heat conduction can be reduced to a certain extent by a micron-sized heat source, so that the magnetic conductive adhesive layer in the bonding area is heated first, and solder particles around the chip electrode can be automatically gathered on the chip electrode under the action of interfacial tension, so that the chip and the driving backboard are electrically connected. Therefore, the electric connection between the chip and the driving backboard is realized by self-aggregation of solder particles between the chip and the driving backboard, external heating or large pressure application is not needed, the phenomenon of poor edge lamination of a bonding area caused by buckling deformation and CTE difference when the chip is bonded with the driving backboard is effectively avoided, and the bonding yield of the chip is improved. In addition, as the magnetic microspheres heat themselves, the curing of the adhesive material in the surrounding area caused by heating of the pressure head on the traditional ACF is avoided, so that the problem of bonding failure of the follow-up chip and the driving backboard is avoided, and the transfer yield of the next batch of chips is ensured.
In step S10, referring to step S10 in fig. 2 and fig. 3, a growth substrate 10 is provided, and a chip 11 is formed on one side surface of the growth substrate 10.
In some examples, the growth substrate 10 includes a sapphire substrate, a gallium nitride substrate, or a silicon substrate.
In some examples, the chip 11 includes an epitaxial layer 111 and first and second metal electrodes 1121 and 1122 disposed on a side of the epitaxial layer 111 facing away from the growth substrate 10, the first and second metal electrodes 1121 and 1122 constituting the metal electrodes 112 of the chip 11.
In step S20, referring to step S20 in fig. 2 and fig. 4, a driving back plate 20 is provided.
In some examples, the drive backplate 20 comprises a sapphire substrate, a gallium nitride substrate, or a silicon substrate.
In step S30, referring to step S30 in fig. 2 and fig. 4, a magnetic conductive adhesive layer 010 is formed on a side surface of the driving back plate 20 according to any of the above embodiments.
In some examples, one side surface of the driving backplate 20 is provided with a pad 21; the magnetic conductive adhesive layer 010 covers the surface of the driving backplate provided with the bonding pad 21, and covers the bonding pad 21.
In step S40, referring to step S30 in fig. 2 and fig. 5, the growth substrate 10 is bonded to the surface of the magnetic conductive adhesive layer 010 away from the driving back plate 20, and the chip 11 is contacted with the magnetic conductive adhesive layer 010.
In some examples, the die 11 may be bonded to the drive backplate 20 using thermocompression bonding.
In some examples, the surface of the chip 11 remote from the growth substrate 10 is formed with a metal electrode 112, and after the chip 11 is bonded to the surface of the magnetic conductive adhesive layer 010, the metal electrode 112 is in contact with the magnetic conductive adhesive layer 010.
In some examples, after all the chips 11 are bonded to the surface of the magnetic conductive adhesive layer 010 away from the driving back plate 20 and the chips 11 are electrically connected to the driving back plate 20, the method further includes: and curing the magnetic conductive adhesive layer 010.
In step S50, referring to step S50 in fig. 2 and fig. 6, an alternating magnetic field 30 is applied at least in the bonding region where the chip 11 is bonded to the magnetic conductive adhesive layer 010, so that the chip 11 in the bonding region is electrically connected to the driving back plate 20.
In step S60, referring to step S60 in fig. 2 and fig. 6 and 7, the growth substrate 10 is removed. In some examples, the growth substrate 10 may be removed using a laser lift-off method to separate the growth substrate 10 from the chip 11.
Referring to fig. 7, based on the same inventive concept, the present application further provides a chip bonding structure, including: a drive back 20; the magnetic conductive adhesive layer 010 according to any of the foregoing embodiments, wherein the magnetic conductive adhesive layer 010 covers one side surface of the driving back plate 20; the chip 11 is bonded to the surface of the magnetic conductive adhesive layer 010 away from the driving back plate 20, and the chip 11 is electrically connected with the driving back plate 20 through the magnetic conductive adhesive layer 010.
In some examples, the surface of the chip 11 remote from the growth substrate 10 is formed with a metal electrode 112, and after the chip 11 is bonded to the surface of the magnetic conductive adhesive layer 010, the metal electrode 112 is in contact with the magnetic conductive adhesive layer 010.
In some examples, one side surface of the driving backplate 20 is provided with a pad 21; the magnetic conductive adhesive layer 010 covers the surface of the driving backplate provided with the bonding pad 21, and covers the bonding pad 21.
In the above-mentioned chip bonding structure, the chip 11 and the driving back plate 20 are bonded by using the magnetic conductive adhesive layer 010, and compared with the common ACF, the magnetic conductive adhesive layer 010 has magnetic microspheres therein, and the magnetic microspheres can generate a large amount of heat under the alternating magnetic field 30 with lower intensity, thereby realizing self-heating. Therefore, in the above-mentioned chip bonding structure, the magnetic microspheres in the magnetic conductive adhesive layer 010 can be rapidly heated under the action of the alternating magnetic field 30, and the adhesive layer curing phenomenon in other areas caused by heat conduction can be reduced to a certain extent by the micron-sized heat source, so that the magnetic conductive adhesive layer 010 in the bonding area of the chip 11 is heated first, and the solder particles around the metal electrode 112 of the chip can be automatically gathered on the metal electrode 112 under the action of interfacial tension, thereby realizing the electrical connection between the chip 11 and the driving back plate 20. Therefore, in the above-mentioned chip bonding structure, the electrical connection between the chip 11 and the driving back plate 20 does not need to use external heating or apply large pressure, so that the phenomenon of poor edge lamination of the bonding area caused by warp deformation and CTE difference between expansion coefficients when the chip 11 and the driving back plate 20 are bonded is effectively avoided, and the bonding yield of the chip 11 is improved. In addition, the magnetic microspheres heat themselves, so that the curing of the adhesive material in the surrounding area caused by heating of the pressure head on the traditional ACF is avoided, and the transfer yield of the chips in the next batch is ensured.
Referring to fig. 8, based on the same inventive concept, the present application further provides a chip repairing method, which includes the following steps:
s100: providing a chip bonding structure according to any of the foregoing embodiments, wherein the magnetic conductive adhesive layer bonds a plurality of chips away from the surface of the driving back plate;
s200: determining an abnormal chip existing in the plurality of chips, and removing the abnormal chip;
s300: bonding a repair chip to a chip repair area, wherein the chip repair area is an area formed after the abnormal chip is removed;
s400: and applying an alternating magnetic field at least in a bonding area where the repair chip is bonded with the magnetic conductive adhesive layer so as to electrically connect the repair chip with the driving backboard.
According to the chip repairing method, the chip is bonded with the driving backboard by utilizing the magnetic conductive adhesive layer, the magnetic microspheres are arranged in the magnetic conductive adhesive layer, a large amount of heat can be generated under the alternating magnetic field with lower intensity, so that the chip is bonded with the driving backboard, the chip is further tested, after the abnormal chip and the abnormal chip area where the abnormal chip is located are positioned, the abnormal chip is picked up and repaired, the repaired chip is bonded to the abnormal chip area, finally, the alternating magnetic field is applied in the bonding area where the repaired chip is bonded with the magnetic conductive adhesive layer, so that the repaired chip is electrically connected with the driving backboard, and the huge transfer repairing steps are reduced.
In step S100, referring to step S100 in fig. 8 and fig. 9, a chip bonding structure according to any of the foregoing embodiments is provided, in which a plurality of chips 11 are bonded on a surface of the magnetic conductive adhesive layer 010 away from the driving back plate 20.
In some examples, the surface of the chip 11 remote from the growth substrate 10 is formed with a metal electrode 112, and after the chip 11 is bonded to the surface of the magnetic conductive adhesive layer 010, the metal electrode 112 is in contact with the magnetic conductive adhesive layer 010.
In some examples, the chip 11 includes an epitaxial layer 111 and first and second metal electrodes 1121 and 1122 disposed on a side of the epitaxial layer 111 facing away from the growth substrate 10, the first and second metal electrodes 1121 and 1122 constituting the metal electrodes 112 of the chip 11.
In step S200, referring to step S200 in fig. 8 and fig. 10 and 11, the abnormal chips 12 existing in the plurality of chips 11 are determined, and the abnormal chips 12 are removed.
In some examples, the method of determining the abnormal chips 12 present in the plurality of chips 11 may employ optical detection or electrical detection.
Specifically, optical detection includes Photoluminescence (PL) test and automated optical detection (Automated Optical Inspection, AOI).
In some examples, removing the abnormal chip 12 may be accomplished by a pick-up device. The pick-up device comprises a transfer substrate 40 and a glue layer 41.
It should be noted that the tackiness of the adhesive layer 41 is greater than the tackiness of the magnetic conductive adhesive layer 010.
In step S300, referring to step S300 in fig. 8 and fig. 12, the repair chip 13 is bonded to the chip repair area 130, and the chip repair area 130 is an area formed after removing the abnormal chip.
It should be noted that, after the repair chip 13 is bonded to the chip repair area 130, the repair chip 13 cannot be completely electrically connected to the driving back plate 20.
That is, the repair chip 13 is adhered to the repair area 130, and then the electrical connection between the repair chip and the driving back plate 20 is achieved in step S400.
In step S400, referring to step S400 in fig. 8 and fig. 12, an alternating magnetic field 30 is applied at least in the bonding region where the repair chip 13 is bonded to the magnetic conductive adhesive layer 010, so as to electrically connect the repair chip 13 and the driving back plate 20.
In some examples, after all the chips 11 are bonded to the surface of the magnetic conductive adhesive layer 010 away from the driving back plate 20 and the chips 11 are electrically connected to the driving back plate 20, the method further includes: and curing the magnetic conductive adhesive layer 010.
In the description of the present specification, the technical features of the above-described embodiments may be arbitrarily combined, and for brevity of description, all possible combinations of the technical features of the above-described embodiments are not described, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description of the present specification.
The above examples merely represent a few embodiments of the present disclosure, which are described in more detail and are not to be construed as limiting the scope of the claims. It should be noted that variations and modifications can be made by those skilled in the art without departing from the spirit of the disclosure, which are within the scope of the disclosure. Accordingly, the scope of protection of the present disclosure should be determined by the following claims.
Claims (10)
1. A magnetic conductive adhesive layer, comprising:
a glue material;
solder particles distributed in the glue material;
and the magnetic microspheres are distributed in the adhesive material.
2. The magnetic conductive adhesive layer according to claim 1, wherein the solder particles have a particle diameter of 3 μm to 4 μm; the particle size of the magnetic microsphere is smaller than 1 mu m.
3. The magnetically conductive adhesive layer of claim 1, further comprising a flux, the flux being located within the adhesive material.
4. A magnetic conductive paste according to any one of claims 1 to 3, wherein said solder particles are uniformly distributed in at least a predetermined area of said paste; the magnetic microspheres are uniformly distributed in at least a preset area of the adhesive material.
5. A chip transfer method, comprising the steps of:
providing a growth substrate, wherein a chip is formed on one side surface of the growth substrate;
providing a driving backboard;
forming the magnetic conductive adhesive layer according to any one of claims 1 to 4 on a side surface of the driving back plate;
bonding the growth substrate to the surface of the magnetic conductive adhesive layer far away from the driving backboard, wherein the chip is contacted with the magnetic conductive adhesive layer;
applying an alternating magnetic field at least in a bonding area where the chip is bonded with the magnetic conductive adhesive layer, so that the chip in the bonding area is electrically connected with the driving backboard;
and removing the growth substrate.
6. The chip transfer method of claim 5, wherein a pad is provided on a side surface of the driving back plate; the magnetic conductive adhesive layer covers the surface of the driving backboard provided with the bonding pad and covers the bonding pad.
7. The method of claim 5, wherein a metal electrode is formed on a surface of the chip remote from the growth substrate, and the metal electrode is in contact with the magnetic conductive adhesive layer after the chip is bonded to the surface of the magnetic conductive adhesive layer.
8. The chip transfer method of any one of claims 5 to 7, further comprising, after bonding all the chips to a surface of the magnetic conductive adhesive layer remote from the drive back plate and electrically connecting the chips to the drive back plate:
and curing the magnetic conductive adhesive layer.
9. A die bonding structure, comprising:
a drive back plate;
the magnetic conductive adhesive layer according to any one of claims 1 to 4, which covers one side surface of the driving back plate;
and the chip is bonded on the surface, far away from the driving backboard, of the magnetic conductive adhesive layer, and is electrically connected with the driving backboard through the magnetic conductive adhesive layer.
10. The chip repairing method is characterized by comprising the following steps of:
providing a chip bonding structure according to claim 9, wherein a plurality of chips are bonded on the surface of the magnetic conductive adhesive layer, which is far away from the driving backboard;
determining abnormal chips existing in a plurality of chips, and removing the abnormal chips;
bonding a repair chip to a chip repair area, wherein the chip repair area is an area formed after the abnormal chip is removed;
and applying an alternating magnetic field at least in a bonding area where the repair chip is bonded with the magnetic conductive adhesive layer, so that the repair chip is electrically connected with the driving backboard.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210667093.8A CN117276300A (en) | 2022-06-14 | 2022-06-14 | Magnetic conductive adhesive layer, chip bonding structure, chip transferring method and repairing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210667093.8A CN117276300A (en) | 2022-06-14 | 2022-06-14 | Magnetic conductive adhesive layer, chip bonding structure, chip transferring method and repairing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117276300A true CN117276300A (en) | 2023-12-22 |
Family
ID=89199575
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210667093.8A Pending CN117276300A (en) | 2022-06-14 | 2022-06-14 | Magnetic conductive adhesive layer, chip bonding structure, chip transferring method and repairing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117276300A (en) |
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2022
- 2022-06-14 CN CN202210667093.8A patent/CN117276300A/en active Pending
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