JP2005129757A - Method of connecting semiconductor device - Google Patents

Method of connecting semiconductor device Download PDF

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JP2005129757A
JP2005129757A JP2003364276A JP2003364276A JP2005129757A JP 2005129757 A JP2005129757 A JP 2005129757A JP 2003364276 A JP2003364276 A JP 2003364276A JP 2003364276 A JP2003364276 A JP 2003364276A JP 2005129757 A JP2005129757 A JP 2005129757A
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semiconductor device
circuit board
acf
conductive film
anisotropic conductive
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Chiharu Wakamatsu
千春 若松
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector

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Abstract

<P>PROBLEM TO BE SOLVED: To provide a method by which a semiconductor device having projecting electrodes can be thermocompression bonded surely to a circuit board through an anisotropic conductive film. <P>SOLUTION: In the method of connecting the semiconductor device, the semiconductor device is thermocompression bonded to the circuit board by only transferring the anisotropic conductive film (ACF) 6 to bumps 3 which are the projecting electrodes of a display driver element 1 by pressing the bumps 3 against the ACF 6 and placing the driver element 1 on glass 2 serving as the circuit board, and then, curing the ACF 6 by pressurizing and heating the element 1. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、突起状電極であるバンプを有する半導体装置を回路基板に形成された電極板に、異方性導電フィルムを介して接続させる半導体装置の接続方法に関する。   The present invention relates to a method for connecting a semiconductor device in which a semiconductor device having bumps that are protruding electrodes is connected to an electrode plate formed on a circuit board via an anisotropic conductive film.

従来より、半導体装置を異方性導電フィルム（以下、「ＡＣＦ」と称す。）を介して基板上に形成した電極に直接接続する接続方法が知られている。   Conventionally, there has been known a connection method in which a semiconductor device is directly connected to an electrode formed on a substrate through an anisotropic conductive film (hereinafter referred to as “ACF”).

ＡＣＦは、一般に、熱硬化性又は紫外線硬化性等といった特性を有する樹脂の内部に多数の導電粒子を分散させることによって形成される。   ACF is generally formed by dispersing a large number of conductive particles in a resin having characteristics such as thermosetting or ultraviolet curable.

ＡＣＦを使用することで、半導体装置の接続処理を確実に行え製品の低コスト化を達成することができる。   By using the ACF, the connection process of the semiconductor device can be reliably performed, and the cost of the product can be reduced.

例えば、液晶パネルにＩＣチップを接続する方法が特許文献１に記載されている。   For example, Patent Document 1 discloses a method for connecting an IC chip to a liquid crystal panel.

その接続方法は、以下のとおりである。   The connection method is as follows.

導電性およびゴム弾性を有する導電粒子を含んだＡＣＦを、ガラス面上に形成された透明電極（Indium Tin Oxide、インジウム錫酸化物、以下ＩＴＯと称す。）へ転写する。転写されたＡＣＦは、ＩＴＯの上面およびＩＴＯが形成されていないガラス面上に均一な層を形成する。そして、突起状電極であるバンプを有するＩＣチップを所定のＩＴＯとバンプが接続するよう載置し、ＩＣチップを加圧、加熱することで、ＡＣＦが硬化し、ＩＣチップのバンプと液晶パネルのＩＴＯが熱圧着する。
特開昭６２−２４４１４２号公報（第２−４頁、第１図） The ACF containing conductive particles having conductivity and rubber elasticity is transferred to a transparent electrode (indium tin oxide, hereinafter referred to as ITO) formed on the glass surface. The transferred ACF forms a uniform layer on the top surface of ITO and the glass surface on which ITO is not formed. Then, an IC chip having bumps as projecting electrodes is placed so that the predetermined ITO and bumps are connected, and by pressing and heating the IC chip, the ACF is cured, and the bumps of the IC chip and the liquid crystal panel ITO is thermocompression bonded.
JP 62-244142 A (page 2-4, FIG. 1)

従来の半導体装置の接続方法においては、予め回路基板上にＡＣＦによる層を形成し、半導体装置の突起状電極であるバンプを回路基板上に形成した電極にＡＣＦを介して載置し加熱および加圧を行う。そのため、バンプの圧力により、ＡＣＦに含まれる導電粒子がＡＣＦを形成する樹脂内を流動し、バンプと接続する電極板との間から、隣接するバンプの間に流れ込むことがある。半導体装置のバンプは多ピン化に伴い、隣接するバンプの間隔が狭くなってきており、高機能、高密度を実現した半導体装置では、バンプの間隔も１５μｍ程度しかない。従って、導電粒子の直径が３〜５μｍであるため、ＡＣＦに含まれる導電粒子が、バンプ間に３個〜５個直列に並ぶと、隣接するバンプを短絡させるという問題が生じる。   In a conventional method for connecting a semiconductor device, a layer made of ACF is previously formed on a circuit board, and bumps, which are projecting electrodes of the semiconductor device, are placed on the electrode formed on the circuit board via the ACF, and heated and heated. Apply pressure. For this reason, the conductive particles contained in the ACF may flow in the resin forming the ACF due to the pressure of the bumps, and may flow from between the electrode plates connected to the bumps to between the adjacent bumps. As bumps of semiconductor devices increase in number of pins, the interval between adjacent bumps has become narrower, and in a semiconductor device that realizes high functionality and high density, the interval between bumps is only about 15 μm. Accordingly, since the diameter of the conductive particles is 3 to 5 μm, when 3 to 5 conductive particles included in the ACF are arranged in series between the bumps, there is a problem that the adjacent bumps are short-circuited.

隣接するバンプが短絡すると、半導体装置は正常に動作しないため不良品と判断される。不良と判断された半導体装置を交換するには、硬化したＡＣＦにより回路基板に接続されている半導体装置を回路基板から離反させ、回路基板に貼りついた状態で残ったＡＣＦを取り除く等のリペア作業に多大な工数を要する。   When adjacent bumps are short-circuited, the semiconductor device does not operate normally, so that it is determined as a defective product. To replace a semiconductor device that has been determined to be defective, repair work such as removing the ACF that remains attached to the circuit board by separating the semiconductor device connected to the circuit board with the cured ACF from the circuit board. Enormous man-hours.

そこで本発明においては、突起状電極を有する半導体装置を、異方性導電フィルムを介して回路基板に確実に熱圧着する半導体装置の接続方法を提供することを目的とする。   Accordingly, an object of the present invention is to provide a method for connecting a semiconductor device, in which a semiconductor device having a protruding electrode is reliably thermocompression bonded to a circuit board via an anisotropic conductive film.

この課題を解決するために本発明は、半導体装置の突起状電極を異方性導電フィルムへ押圧し、異方性導電フィルムをバンプのみに転写させ、半導体装置を回路基板に載置し、半導体装置を加圧および加熱して異方性導電フィルムを硬化させることで熱圧着する半導体装置の接続方法である。   In order to solve this problem, the present invention presses a protruding electrode of a semiconductor device onto an anisotropic conductive film, transfers the anisotropic conductive film only to a bump, and places the semiconductor device on a circuit board. This is a method of connecting a semiconductor device that is thermocompression bonded by pressurizing and heating the device to cure the anisotropic conductive film.

これにより、バンプ以外に異方性導電フィルムが転写されていないため、半導体装置と回路基板を接続する際に、異方性導電フィルムに含まれる導電粒子が広がらず、バンプ間の短絡を防止できる。   Thereby, since the anisotropic conductive film is not transferred except for the bumps, the conductive particles contained in the anisotropic conductive film do not spread when the semiconductor device and the circuit board are connected, and a short circuit between the bumps can be prevented. .

本発明により、以下の効果を奏することができる。
（１）請求項１に記載の発明によれば、ＡＣＦをバンプのみに転写させるので、接続する際に、導電粒子が隣接するバンプの間に直列に並び短絡することがないため、確実な半導体装置と回路基板との接続が図れ、隣接するバンプ間の短絡による半導体装置の動作不良を防止できる。
（２）請求項２に記載の発明によれば、非導電性フィルム（以下、ＮＣＦと称す。）を予め回路基板に転写しておくことにより、半導体装置と回路基板の密着度を高め、半導体装置への応力に対しての耐久度を増加させることができる。
（３）請求項３に記載の発明によれば、ＡＣＦをバンプのみに転写させた半導体装置を回路基板に載置した後に、半導体装置と回路基板の間に熱硬化性の樹脂を注入することにより、半導体装置と回路基板の密着度を高め、半導体装置への応力に対しての耐久度を増加させることができる。
（４）請求項４に記載の発明によれば、ＡＣＦをバンプのみに転写させた半導体装置を回路基板に載置した後に、半導体装置と回路基板の間に熱硬化性の樹脂を注入することにより、ＡＣＦと樹脂を同時に加熱することができるので、１回の加熱工程とすることができる。よって、製造工程の簡略化が図れる。また、半導体装置と回路基板の間に樹脂を硬化させることにより、半導体装置と回路基板の密着度を高め、半導体装置への応力に対しての耐久度を増加させることができる。
（５）請求項５に記載の発明によれば、回路基板に形成した電極板のみにＡＣＦを転写するので、接続する際に、導電粒子が隣接するバンプの間に直列に並び短絡することがないため、確実な半導体装置と回路基板との接続が図れ、隣接するバンプ間の短絡による半導体装置の動作不良を防止できる。
（６）請求項６に記載の発明によれば、半導体装置を回路基板に載置し、半導体回路を加圧、加熱した後、半導体装置と回路基板の間に熱硬化性の樹脂を注入することにより、半導体装置と回路基板の密着度を高め、半導体装置への応力に対しての耐久度を増加させることができる。
（７）請求項７に記載の発明によれば、半導体装置をＡＣＦを電極板に転写した回路基板に載置した後に、半導体装置と回路基板の間に熱硬化性の樹脂を注入することにより、ＡＣＦと樹脂を同時に加熱することができるので、１回の加熱工程とすることができる。よって、製造工程の簡略化が図れる。また、半導体装置と回路基板の間に樹脂を硬化させることにより、半導体装置と回路基板の密着度を高め、半導体装置への応力に対しての耐久度を増加させることができる。 According to the present invention, the following effects can be obtained.
(1) According to the first aspect of the present invention, since the ACF is transferred only to the bumps, the conductive particles are not arranged in series between adjacent bumps and short-circuited when connecting. The device can be connected to the circuit board, and malfunction of the semiconductor device due to a short circuit between adjacent bumps can be prevented.
(2) According to the second aspect of the present invention, the non-conductive film (hereinafter referred to as NCF) is transferred to the circuit board in advance, thereby increasing the adhesion between the semiconductor device and the circuit board. The durability against the stress to the device can be increased.
(3) According to the invention described in claim 3, after the semiconductor device having the ACF transferred only to the bumps is placed on the circuit board, a thermosetting resin is injected between the semiconductor device and the circuit board. As a result, the degree of adhesion between the semiconductor device and the circuit board can be increased, and the durability against stress on the semiconductor device can be increased.
(4) According to the invention described in claim 4, after the semiconductor device having the ACF transferred only to the bumps is placed on the circuit board, a thermosetting resin is injected between the semiconductor device and the circuit board. Thus, the ACF and the resin can be heated at the same time, so that one heating step can be performed. Therefore, the manufacturing process can be simplified. Further, by curing the resin between the semiconductor device and the circuit board, the degree of adhesion between the semiconductor device and the circuit board can be increased, and the durability against stress on the semiconductor device can be increased.
(5) According to the invention described in claim 5, since the ACF is transferred only to the electrode plate formed on the circuit board, when connecting, the conductive particles may be arranged in series between adjacent bumps and short-circuited. Therefore, a reliable connection between the semiconductor device and the circuit board can be achieved, and malfunction of the semiconductor device due to a short circuit between adjacent bumps can be prevented.
(6) According to the invention described in claim 6, after placing the semiconductor device on the circuit board and pressurizing and heating the semiconductor circuit, a thermosetting resin is injected between the semiconductor device and the circuit board. As a result, the adhesion between the semiconductor device and the circuit board can be increased, and the durability against stress on the semiconductor device can be increased.
(7) According to the invention described in claim 7, after the semiconductor device is placed on the circuit board on which the ACF is transferred to the electrode plate, a thermosetting resin is injected between the semiconductor device and the circuit board. Since ACF and the resin can be heated at the same time, a single heating step can be performed. Therefore, the manufacturing process can be simplified. Further, by curing the resin between the semiconductor device and the circuit board, the degree of adhesion between the semiconductor device and the circuit board can be increased, and the durability against stress on the semiconductor device can be increased.

本願の請求項１に記載の発明は、突起状電極であるバンプを形成した半導体装置を、導電粒子を含む異方性導電フィルムを介し、回路基板に形成した電極板へ接続させる接続方法であって、前記半導体装置の前記バンプを前記異方性導電フィルムへ押圧し、前記異方性導電フィルムを前記バンプのみに転写し、前記バンプと前記電極板が接続するよう前記半導体装置を前記回路基板に載置し、前記半導体装置を加圧および加熱して前記異方性導電フィルムを硬化させることを特徴とする半導体装置の接続方法としたものであり、これにより、バンプ以外に異方性導電フィルムが転写されていないため、半導体装置と回路基板を接続する際に、異方性導電フィルムに含まれる電導粒子が広がらない。   The invention according to claim 1 of the present application is a connection method in which a semiconductor device on which bumps that are protruding electrodes are formed is connected to an electrode plate formed on a circuit board via an anisotropic conductive film containing conductive particles. The bumps of the semiconductor device are pressed against the anisotropic conductive film, the anisotropic conductive film is transferred only to the bumps, and the semiconductor device is connected to the circuit board so that the bumps and the electrode plates are connected. The semiconductor device connection method is characterized in that the anisotropic conductive film is cured by pressurizing and heating the semiconductor device. Since the film is not transferred, the conductive particles contained in the anisotropic conductive film do not spread when connecting the semiconductor device and the circuit board.

請求項２に記載の発明は、前記半導体装置を前記回路基板へ載置する前に、予め前記回路基板面に非導電性フィルムを転写し、前記バンプと前記電極板が接続するよう前記半導体装置を前記回路基板に載置し、前記半導体装置を加圧および加熱して非導電性フィルムおよび前記異方性導電フィルムを硬化させることを特徴とする請求項１記載の半導体装置の接続方法としたものであり、予め非電導性フィルムを回路基板に転写することにより、半導体装置と回路基板との密着度を高めることができる。   According to a second aspect of the present invention, before placing the semiconductor device on the circuit board, a non-conductive film is transferred to the surface of the circuit board in advance, so that the bump and the electrode plate are connected. 2. The semiconductor device connection method according to claim 1, wherein the semiconductor device is placed on the circuit board, and the semiconductor device is pressurized and heated to cure the non-conductive film and the anisotropic conductive film. Therefore, the degree of adhesion between the semiconductor device and the circuit board can be increased by transferring the nonconductive film to the circuit board in advance.

請求項３に記載の発明は、前記半導体装置を前記回路基板へ載置し、前記半導体装置を加圧および加熱し、前記異方性導電フィルムを硬化させた後、前記半導体装置と前記回路基板の間に熱硬化性の樹脂を注入し、前記半導体装置と前記回路基板を加熱して前記樹脂を硬化させることを特徴とする請求項１記載の半導体装置の接続方法としたものであり、半導体装置と回路基板を接続した後に、熱硬化性樹脂を隙間に充填することにより、半導体装置と回路基板の密着度を高めることができる。   According to a third aspect of the present invention, the semiconductor device is placed on the circuit board, the semiconductor device is pressurized and heated, and the anisotropic conductive film is cured, and then the semiconductor device and the circuit board A method for connecting a semiconductor device according to claim 1, wherein a thermosetting resin is injected between the semiconductor device and the semiconductor device and the circuit board are heated to cure the resin. After the device and the circuit board are connected, the adhesion between the semiconductor device and the circuit board can be increased by filling the gap with a thermosetting resin.

請求項４に記載の発明は、前記半導体装置を前記回路基板へ載置した後に、前記半導体装置と前記回路基板の間に熱硬化性の樹脂を注入し、前記半導体装置を加圧および加熱して前記樹脂および前記異方性導電フィルムを硬化させることを特徴とする請求項１記載の半導体装置の接続方法としたものであり、バンプに転写した異方性導電フィルムと半導体装置と回路基板の間に注入した樹脂を同時に加熱することができる。また半導体装置と回路基板の間に注入した樹脂により半導体装置と回路基板の密着度を高めることができる。   According to a fourth aspect of the present invention, after the semiconductor device is placed on the circuit board, a thermosetting resin is injected between the semiconductor device and the circuit board, and the semiconductor device is pressurized and heated. The resin and the anisotropic conductive film are cured, and the semiconductor device connection method according to claim 1, wherein the anisotropic conductive film transferred to the bump, the semiconductor device, and the circuit board The resin poured in between can be heated at the same time. Further, the adhesion between the semiconductor device and the circuit board can be increased by the resin injected between the semiconductor device and the circuit board.

請求項５に記載の発明は、突起状電極であるバンプを形成した半導体装置を、導電粒子を含む異方性導電フィルムを介し、回路基板に形成した電極板へ圧着させる接続方法であって、前記回路基板に前記異方性導電フィルムを押圧し、前記電極板のみに前記異方性導電フィルムを転写し、前記半導体装置を前記回路基板に前記バンプと前記電極板が接続するよう載置し、前記半導体装置を加圧および加熱して異方性導電フィルムを硬化させることを特徴とする半導体装置の接続方法としたものであり、これにより、電極板以外に異方性導電フィルムが転写されていないため、半導体装置と回路基板を接続する際に、異方性導電フィルムに含まれる導電粒子が広がらない。   The invention according to claim 5 is a connection method in which a semiconductor device in which a bump which is a protruding electrode is formed is pressure-bonded to an electrode plate formed on a circuit board through an anisotropic conductive film containing conductive particles. The anisotropic conductive film is pressed against the circuit board, the anisotropic conductive film is transferred only to the electrode plate, and the semiconductor device is placed on the circuit board so that the bump and the electrode plate are connected. The method for connecting a semiconductor device is characterized in that the semiconductor device is pressurized and heated to cure the anisotropic conductive film, whereby the anisotropic conductive film is transferred in addition to the electrode plate. Therefore, when the semiconductor device and the circuit board are connected, the conductive particles contained in the anisotropic conductive film do not spread.

請求項６に記載の発明は、前記半導体装置を前記回路基板へ載置し、前記半導体装置を加圧および加熱した後、前記半導体装置と前記回路基板の間に熱硬化性の樹脂を注入し、前記半導体装置と前記回路基板を加熱して前記樹脂を硬化させることを特徴とする請求項５記載の半導体装置の接続方法としたものであり、半導体装置と回路基板を結合した後に、熱硬化性樹脂を隙間に充填することにより、半導体装置と回路基板の密着度を高めることができる。   According to a sixth aspect of the present invention, after placing the semiconductor device on the circuit board, pressurizing and heating the semiconductor device, and then injecting a thermosetting resin between the semiconductor device and the circuit board. 6. The method of connecting a semiconductor device according to claim 5, wherein the resin is cured by heating the semiconductor device and the circuit board, and the thermosetting is performed after the semiconductor device and the circuit board are combined. By filling the gap with the conductive resin, the adhesion between the semiconductor device and the circuit board can be increased.

請求項７に記載の発明は、前記半導体装置を前記回路基板へ載置した後に、前記半導体装置と前記回路基板の間に熱硬化性の樹脂を注入し、前記半導体装置を加圧および加熱し、前記樹脂および前記異方性導電フィルムを硬化させることを特徴とする請求項５記載の半導体装置の接続方法としたものであり、回路基板に形成した電極に転写した異方性導電フィルムと半導体装置と回路基板の間に注入した樹脂を同時に加熱することができる。また半導体装置と回路基板の間に注入した樹脂により半導体装置と回路基板の密着度を高めることができる。   According to a seventh aspect of the present invention, after the semiconductor device is placed on the circuit board, a thermosetting resin is injected between the semiconductor device and the circuit board, and the semiconductor device is pressurized and heated. 6. The method of connecting a semiconductor device according to claim 5, wherein the resin and the anisotropic conductive film are cured, and the anisotropic conductive film and the semiconductor transferred to an electrode formed on a circuit board. The resin injected between the device and the circuit board can be heated simultaneously. Further, the adhesion between the semiconductor device and the circuit board can be increased by the resin injected between the semiconductor device and the circuit board.

以下に、本発明の一実施の形態について図面を参照しながら説明する。   Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

（実施の形態１）
図１は、本発明の実施の形態１に係る半導体装置の接続方法を示す図である。 (Embodiment 1)
FIG. 1 is a diagram illustrating a semiconductor device connection method according to the first embodiment of the present invention.

半導体装置の一例である、液晶パネルに表示する表示ドライバ素子１を、液晶パネルの回路基板を構成するガラス２に接続する構成を説明する。   A configuration in which a display driver element 1 that is displayed on a liquid crystal panel, which is an example of a semiconductor device, is connected to glass 2 that forms a circuit board of the liquid crystal panel will be described.

液晶ドライバ素子１は、突起状電極であるバンプ３を有している。バンプ３の表面はＡｕで形成され、隣接するバンプとの間隔は１５μｍである。   The liquid crystal driver element 1 has bumps 3 that are protruding electrodes. The surface of the bump 3 is made of Au, and the distance between adjacent bumps is 15 μm.

ガラス２は、電極板であるＩＴＯ４が形成されている。   The glass 2 is formed with ITO4 which is an electrode plate.

接続部材５は、ＡＣＦ６とベースフィルム７から構成される。   The connection member 5 includes an ACF 6 and a base film 7.

また、ＡＣＦ６は、熱硬化性樹脂から形成され、厚みは１５〜２０μｍある。ＡＣＦ６は、導電性を有する導電粒子８を含んでおり、この導電粒子８は、粒径がそろった球形をしており、金メッキしたポリマー等であれば、粒径が３〜５μｍある。   Moreover, ACF6 is formed from a thermosetting resin, and thickness is 15-20 micrometers. The ACF 6 includes conductive particles 8 having conductivity, and the conductive particles 8 have a spherical shape with a uniform particle diameter. If the polymer is a gold-plated polymer or the like, the particle diameter is 3 to 5 μm.

次に、図１に基づいて、表示ドライバ素子１をガラス２に接続する方法を説明する。   Next, a method of connecting the display driver element 1 to the glass 2 will be described with reference to FIG.

まず、接続部材５のＡＣＦ６側へ表示ドライバ素子１のバンプ３を押圧する（同図（ａ））。   First, the bump 3 of the display driver element 1 is pressed to the ACF 6 side of the connecting member 5 (FIG. 1A).

次に、バンプ３をＡＣＦ６へ押圧することで、ＡＣＦ６はベースフィルム７から剥がれるように、バンプ３の底面に転写しＡＣＦ接続材９が形成される（同図（ｂ））。   Next, by pressing the bump 3 against the ACF 6, the ACF 6 is transferred to the bottom surface of the bump 3 so that the ACF 6 is peeled off from the base film 7, thereby forming the ACF connecting material 9 (FIG. 5B).

そして、ＡＣＦ接続材９がバンプ３に転写した表示ドライバ素子１をガラス２に形成された所定のＩＴＯ４へ載置する（同図（ｃ））。   Then, the display driver element 1 having the ACF connecting material 9 transferred to the bumps 3 is placed on a predetermined ITO 4 formed on the glass 2 ((c) in the figure).

最後に、表示ドライバ素子１を上面からヒータブロック等（図示せず）で加圧、加熱する。   Finally, the display driver element 1 is pressurized and heated from above by a heater block or the like (not shown).

表示ドライバ素子１を加圧することで、ＡＣＦ接続材９は、バンプ３の底面とＩＴＯ４に挟まれ変形し押圧とともにバンプ３の外周方向へ広がる。   By pressing the display driver element 1, the ACF connecting material 9 is sandwiched and deformed between the bottom surface of the bump 3 and the ITO 4, and spreads in the outer circumferential direction of the bump 3 with pressing.

バンプ３の底面とＩＴＯ４に挟まれたＡＣＦ接続材９は、そのままバンプ３の底面とＩＴＯ４に挟まれた状態となり、挟まれたＡＣＦ接続材９に含まれる導電粒子８は、バンプ３の底面とＩＴＯ４を導通する。   The ACF connecting material 9 sandwiched between the bottom surface of the bump 3 and the ITO 4 is in a state sandwiched between the bottom surface of the bump 3 and the ITO 4 as it is, and the conductive particles 8 included in the sandwiched ACF connecting material 9 Conduct the ITO4.

余分なＡＣＦ接続材９を形成する樹脂はバンプ３を覆うように広がり、隣接するバンプ３の間にＡＣＦ接続材９の樹脂が付着することがない。   The resin forming the excess ACF connection material 9 spreads so as to cover the bumps 3, and the resin of the ACF connection material 9 does not adhere between the adjacent bumps 3.

また、表示ドライバ素子１を加熱することで、ＡＣＦ接続材９が硬化し、バンプ３とＩＴＯ４の接続が強固なものとなり、表示ドライバ素子１がガラス２に固定し接続する（同図（ｄ））。   Further, by heating the display driver element 1, the ACF connecting material 9 is cured, the connection between the bump 3 and the ITO 4 becomes strong, and the display driver element 1 is fixed and connected to the glass 2 ((d) in the figure). ).

（実施の形態２）
図２は、本発明の実施の形態２に係る半導体装置の接続方法を示す図である。 (Embodiment 2)
FIG. 2 is a diagram illustrating a semiconductor device connection method according to the second embodiment of the present invention.

なお、図２においては、表示ドライバ素子１、ガラス２、バンプ３、ＩＴＯ４、ＡＣＦ接続材９は図１と同様のものであるため、同符号を付して説明は省略する。   In FIG. 2, the display driver element 1, the glass 2, the bump 3, the ITO 4, and the ACF connection material 9 are the same as those in FIG.

本発明の実施の形態２に係る半導体装置の接続方法は、アンダーフィル材として非導電性フィルム（以下、ＮＣＦと称す。）を使用するものであり、実施の形態１にてバンプの底面にＡＣＦを転写させた表示ドライバ素子を、予めＮＣＦを転写したガラス上面に載置し接続する方法である。   The method for connecting a semiconductor device according to the second embodiment of the present invention uses a non-conductive film (hereinafter referred to as NCF) as the underfill material, and the ACF is formed on the bottom surface of the bump in the first embodiment. In this method, the display driver element to which is transferred is placed and connected to the upper surface of the glass to which NCF has been transferred in advance.

以下、図２に基づいて接続方法を説明する。   Hereinafter, a connection method will be described with reference to FIG.

ＮＣＦ１０は、非導電性であり、熱硬化性樹脂にて形成されている。   The NCF 10 is non-conductive and is made of a thermosetting resin.

バンプ３の底面にＡＣＦ接続材９を転写させた表示ドライバ素子１を、ガラス２に転写させたＮＣＦ１０の上面からＩＴＯ４へ載置する（同図（ａ））。   The display driver element 1 having the ACF connecting material 9 transferred to the bottom surface of the bump 3 is placed on the ITO 4 from the upper surface of the NCF 10 transferred to the glass 2 (FIG. 1A).

表示ドライバ素子１を上面からヒータブロック等（図示せず）で加圧、加熱する。表示ドライバ素子１を加圧すると、ＡＣＦ接続材９は、バンプ３の底面とＩＴＯ４に挟まれ変形し、押圧とともにバンプ３の外周方向へ広がる。   The display driver element 1 is pressurized and heated from above with a heater block or the like (not shown). When the display driver element 1 is pressurized, the ACF connecting material 9 is deformed by being sandwiched between the bottom surface of the bump 3 and the ITO 4, and spreads in the outer peripheral direction of the bump 3 with pressing.

バンプ３の底面とＩＴＯ４に挟まれたＡＣＦ接続材９は、そのままバンプ３の底面とＩＴＯ４に挟まれ、挟まれたＡＣＦ接続材９に含まれる導電粒子８は、バンプ３の底面とＩＴＯ４を導通する。   The ACF connecting material 9 sandwiched between the bottom surface of the bump 3 and the ITO 4 is sandwiched between the bottom surface of the bump 3 and the ITO 4 as it is. To do.

ＮＣＦ１０は、表示ドライバ素子１とガラス２の隙間を充填し密着する。   The NCF 10 fills and closes the gap between the display driver element 1 and the glass 2.

表示ドライバ素子１を加熱することで、ＡＣＦ接続材９およびＮＣＦ１０が硬化し、バンプ３とＩＴＯ４の接続が強固なものとなり、表示ドライバ素子１がガラス２に固定し接続する（同図（ｂ））。   By heating the display driver element 1, the ACF connecting material 9 and the NCF 10 are cured, the connection between the bump 3 and the ITO 4 becomes strong, and the display driver element 1 is fixed and connected to the glass 2 ((b) in the figure). ).

（実施の形態３）
図３は、本発明の実施の形態３に係る半導体装置の接続方法を示す図である。 (Embodiment 3)
FIG. 3 is a diagram illustrating a semiconductor device connection method according to the third embodiment of the present invention.

なお、図３においては、表示ドライバ素子１、ガラス２、バンプ３、ＩＴＯ４、ＡＣＦ接続材９は図１と同様のものであるため、同符号を付して説明は省略する。   In FIG. 3, the display driver element 1, the glass 2, the bump 3, the ITO 4, and the ACF connecting material 9 are the same as those in FIG.

本発明の実施の形態３に係る半導体装置の接続方法は、アンダーフィル材として熱硬化性の樹脂を使用するものであり、実施の形態１にてバンプの底面にＡＣＦを転写させた表示ドライバ素子を、ガラス上面へ載置し、加圧および加熱した後、熱硬化性樹脂をガラスと表示ドライバ素子との間に充填し接続する方法である。   The semiconductor device connection method according to the third embodiment of the present invention uses a thermosetting resin as the underfill material, and the display driver element in which the ACF is transferred to the bottom surface of the bump in the first embodiment. Is placed on the upper surface of the glass, pressed and heated, and then filled with a thermosetting resin between the glass and the display driver element.

以下、図３に基づいて接続方法を説明する。   Hereinafter, the connection method will be described with reference to FIG.

樹脂１１は、非導電性であり、熱硬化する特性を有している。   The resin 11 is non-conductive and has a property of thermosetting.

バンプ３の底面にＡＣＦ接続材９を転写させ表示ドライバ素子１を、ガラス２の所定のＩＴＯ４へ載置する（同図（ａ））。   The ACF connecting material 9 is transferred to the bottom surface of the bump 3 and the display driver element 1 is placed on the predetermined ITO 4 of the glass 2 (FIG. 1A).

表示ドライバ素子１を上面からヒータブロック等（図示せず）で加圧する。   The display driver element 1 is pressurized from above with a heater block or the like (not shown).

表示ドライバ素子１を加圧すると、ＡＣＦ接続材９は、バンプ３の底面とＩＴＯ４に挟まれ変形し圧力とともにバンプ３の外周方向へ広がる。   When the display driver element 1 is pressurized, the ACF connecting material 9 is sandwiched and deformed between the bottom surface of the bump 3 and the ITO 4 and spreads in the outer circumferential direction of the bump 3 together with the pressure.

バンプ３の底面とＩＴＯ４に挟まれたＡＣＦ接続材９は、そのままバンプ３の底面とＩＴＯ４に挟まれ、挟まれたＡＣＦ接続材９に含まれる導電粒子８は、バンプ３の底面とＩＴＯ４を導通する。   The ACF connecting material 9 sandwiched between the bottom surface of the bump 3 and the ITO 4 is sandwiched between the bottom surface of the bump 3 and the ITO 4 as it is. To do.

表示ドライバ素子１を加熱することで、ＡＣＦ接続材９が硬化し、バンプ３とＩＴＯ４の接続が強固なものとなり、表示ドライバ素子１がガラス２に固定し接続する（同図（ｂ））。   By heating the display driver element 1, the ACF connecting material 9 is cured, the connection between the bump 3 and the ITO 4 becomes strong, and the display driver element 1 is fixed and connected to the glass 2 ((b) in the figure).

次に、樹脂１１を表示ドライバ素子１とガラス２の隙間に充填する。最後に、表示ドライバ素子１およびガラス２を硬化炉へ入れ加熱することで、樹脂１１が硬化し、バンプ３とＩＴＯ４の接続が強固なものとなり、表示ドライバ素子１がガラス２に固定し接続する（同図（ｃ））。   Next, the resin 11 is filled in the gap between the display driver element 1 and the glass 2. Finally, the display driver element 1 and the glass 2 are put into a curing furnace and heated, whereby the resin 11 is cured, the connection between the bump 3 and the ITO 4 becomes strong, and the display driver element 1 is fixed and connected to the glass 2. (FIG. (C)).

以上説明したように、本発明の実施の形態３に係る半導体装置の接続方法は、表示ドライバ素子１をガラス２へ載置し、表示ドライバ素子１を加圧および加熱した後、表示ドライバ素子１とガラス２の間に熱硬化性の樹脂１１を注入し、表示ドライバ素子１とガラス２を加熱して樹脂１１を硬化させる方法である。別な接続方法として、表示ドライバ素子１をガラス２へ載置した状態で、表示ドライバ素子１とガラス２の間に熱硬化性の樹脂１１を注入し、表示ドライバ素子１とガラス２を加熱して樹脂１１を硬化させても、表示ドライバ素子１とガラス２の接続が可能である。そうすることで、ＡＣＦ接合部材９と樹脂１１との加熱による硬化を、１度で完了できるので、製造工程の簡略化が図れる。   As described above, in the method for connecting a semiconductor device according to the third embodiment of the present invention, the display driver element 1 is placed on the glass 2, the display driver element 1 is pressurized and heated, and then the display driver element 1. In this method, a thermosetting resin 11 is injected between the glass 2 and the display driver element 1 and the glass 2 are heated to cure the resin 11. As another connection method, with the display driver element 1 placed on the glass 2, a thermosetting resin 11 is injected between the display driver element 1 and the glass 2, and the display driver element 1 and the glass 2 are heated. Even if the resin 11 is cured, the display driver element 1 and the glass 2 can be connected. By doing so, curing by heating the ACF bonding member 9 and the resin 11 can be completed at once, so that the manufacturing process can be simplified.

（実施の形態４）
図４は、本発明の実施の形態４に係る半導体装置の接続方法を示す図である。 (Embodiment 4)
FIG. 4 is a diagram illustrating a semiconductor device connection method according to the fourth embodiment of the present invention.

なお、図４においては、表示ドライバ素子１、ガラス２、バンプ３、ＩＴＯ４、接続部材５は図１と同様のものであるため、同符号を付して説明は省略する。   In FIG. 4, the display driver element 1, the glass 2, the bump 3, the ITO 4, and the connecting member 5 are the same as those in FIG.

実施の形態１ではＡＣＦをバンプに転写させて接続する方法であるが、本発明の実施の形態４は、ＡＣＦをガラス上面に転写させて接続する方法である。   In the first embodiment, the ACF is transferred to the bump and connected, but in the fourth embodiment of the present invention, the ACF is transferred to the upper surface of the glass and connected.

以下、図４に基づいて説明する。   Hereinafter, a description will be given with reference to FIG.

まず、ガラス２のＩＴＯ４に、接続部材５のＡＣＦ６側、つまり接着面を向けて載せ、ベースフィルム７を押圧する（同図（ａ））。   First, the ACF 6 side of the connection member 5, that is, the adhesive surface is placed on the ITO 4 of the glass 2, and the base film 7 is pressed (FIG. 1A).

ベースフィルム７を剥がすと、ＡＣＦ６がＩＴＯ４の上面の部分のみ転写して残り、ＡＣＦ接続材１２が形成される（同図（ｂ））。   When the base film 7 is peeled off, only the upper surface portion of the ITO 4 is transferred and the ACF 6 remains, and the ACF connecting material 12 is formed (FIG. 5B).

ＡＣＦ接続材１２が転写したＩＴＯ４に表示ドライバ素子１を所定の位置に載置する（同図（ｃ））。   The display driver element 1 is placed at a predetermined position on the ITO 4 transferred by the ACF connecting material 12 ((c) in the figure).

表示ドライバ素子１を上面からヒータブロック等（図示せず）で加圧および加熱する。   The display driver element 1 is pressurized and heated from above with a heater block or the like (not shown).

表示ドライバ素子１を加圧することで、ＡＣＦ接続材１２は、バンプ３の底面とＩＴＯ４に挟まれ変形し圧力とともにバンプ３の外周方向へ広がる。   By pressurizing the display driver element 1, the ACF connecting material 12 is sandwiched and deformed between the bottom surface of the bump 3 and the ITO 4 and spreads in the outer peripheral direction of the bump 3 together with the pressure.

バンプ３の底面とＩＴＯ４に挟まれたＡＣＦ接続材１２は、そのままバンプ３の底面とＩＴＯ４に挟まれた状態となり、挟まれたＡＣＦ接続材１２に含まれる導電粒子８は、バンプ３の底面とＩＴＯ４を導通する。   The ACF connecting material 12 sandwiched between the bottom surface of the bump 3 and the ITO 4 is sandwiched between the bottom surface of the bump 3 and the ITO 4 as it is, and the conductive particles 8 contained in the sandwiched ACF connecting material 12 Conduct the ITO4.

余分なＡＣＦ接続材１２を形成する樹脂が、バンプ３を覆うように広がり、隣接するバンプ３の間にＡＣＦ接続材１２が付着することがない。   The resin forming the excess ACF connection material 12 spreads so as to cover the bump 3, and the ACF connection material 12 does not adhere between the adjacent bumps 3.

また、表示ドライバ素子１を加熱することで、ＡＣＦ接続材１２が硬化し、バンプ３とＩＴＯ４の接続が強固なものとなり、表示ドライバ素子１がガラス２に固定し接続する（同図（ｄ））。   Further, by heating the display driver element 1, the ACF connecting material 12 is cured, the connection between the bump 3 and the ITO 4 becomes strong, and the display driver element 1 is fixed and connected to the glass 2 ((d) in the figure). ).

（実施の形態５）
図５は、本発明の実施の形態５に係る半導体装置の接続方法を示す図である。 (Embodiment 5)
FIG. 5 is a diagram illustrating a semiconductor device connection method according to the fifth embodiment of the present invention.

なお、図５においては、表示ドライバ素子１、ガラス２、バンプ３、ＩＴＯ４は図１と同様のものであるため、同符号を付して説明は省略する。   In FIG. 5, the display driver element 1, the glass 2, the bump 3, and the ITO 4 are the same as those in FIG.

本発明の実施の形態５に係る半導体装置の接続方法は、アンダーフィル材として熱硬化性の樹脂を使用するものであり、実施の形態４にてＡＣＦをＩＴＯ上面に転写させ、表示ドライバ素子を載置し、加圧および加熱した後、非導電性の熱硬化性樹脂をドライバ素子とガラスの隙間に充填する接続方法である。   The semiconductor device connection method according to the fifth embodiment of the present invention uses a thermosetting resin as the underfill material. In the fourth embodiment, the ACF is transferred to the upper surface of the ITO, and the display driver element is mounted. This is a connection method in which a non-conductive thermosetting resin is filled in a gap between a driver element and glass after being placed, pressurized and heated.

以下、図５に基づいて説明する。   Hereinafter, a description will be given based on FIG.

樹脂１３は、非導電性であり、熱硬化する特性を有している。   The resin 13 is non-conductive and has a property of thermosetting.

まず、ＩＴＯ４の上面にＡＣＦ接続材１２を転写させ表示ドライバ素子１を、所定の位置へ載置する（同図（ａ））。   First, the ACF connecting material 12 is transferred onto the upper surface of the ITO 4 and the display driver element 1 is placed at a predetermined position ((a) in the figure).

次に、表示ドライバ素子１を上面からヒータブロック等（図示せず）で、まず加圧する。   Next, the display driver element 1 is first pressurized from above with a heater block or the like (not shown).

表示ドライバ素子１を加圧すると、ＡＣＦ接続材１２は、バンプ３の底面とＩＴＯ４に挟まれ変形し圧力とともにバンプ３の外周方向へ広がる。   When the display driver element 1 is pressurized, the ACF connecting material 12 is sandwiched and deformed between the bottom surface of the bump 3 and the ITO 4 and spreads in the outer circumferential direction of the bump 3 together with the pressure.

バンプ３の底面とＩＴＯ４に挟まれたＡＣＦ接続材１２は、そのままバンプ３の底面とＩＴＯ４に挟まれ、挟まれたＡＣＦ接続材１２に含まれる導電粒子８は、バンプ３の底面とＩＴＯ４を導通する。   The ACF connection material 12 sandwiched between the bottom surface of the bump 3 and the ITO 4 is directly sandwiched between the bottom surface of the bump 3 and the ITO 4. To do.

表示ドライバ素子１を加熱することで、ＡＣＦ接続材１２が硬化し、バンプ３とＩＴＯ４の接続が強固なものとなり、表示ドライバ素子１がガラス２に固定し接続する。   By heating the display driver element 1, the ACF connecting material 12 is cured, the connection between the bump 3 and the ITO 4 becomes strong, and the display driver element 1 is fixed and connected to the glass 2.

そして、樹脂１３を表示ドライバ素子１とガラス２の隙間に充填する。   Then, the resin 13 is filled in the gap between the display driver element 1 and the glass 2.

最後に、表示ドライバ素子１およびガラス２を硬化炉へ入れ加熱することで、樹脂１３が硬化し、バンプ３とＩＴＯ４の接続が強固なものとなり、表示ドライバ素子１がガラス２に固定し接続する（同図（ｂ））。   Finally, the display driver element 1 and the glass 2 are put into a curing furnace and heated, whereby the resin 13 is cured, the bump 3 and the ITO 4 are firmly connected, and the display driver element 1 is fixed and connected to the glass 2. ((B) in the figure).

以上説明したように、本発明の実施の形態５に係る半導体装置の接続方法は、表示ドライバ素子１をガラス２へ載置し、表示ドライバ素子１を加圧および加熱した後、表示ドライバ素子１とガラス２の間に熱硬化性の樹脂１３を注入し、表示ドライバ素子１とガラス２を加熱して樹脂１３を硬化させる方法である。別な接続方法として、表示ドライバ素子１をガラス２へ載置した状態で、表示ドライバ素子１とガラス２の間に熱硬化性の樹脂１３を注入し、表示ドライバ素子１とガラス２を加熱して樹脂１３を硬化させても、表示ドライバ素子１とガラス２の接続が可能である。そうすることで、ＡＣＦ接続材１２と樹脂１１との加熱による硬化を、１度で完了できるので、製造工程の簡略化が図れる。   As described above, in the method for connecting a semiconductor device according to the fifth embodiment of the present invention, the display driver element 1 is placed on the glass 2, the display driver element 1 is pressurized and heated, and then the display driver element 1. In this method, a thermosetting resin 13 is injected between the glass 2 and the display driver element 1 and the glass 2 are heated to cure the resin 13. As another connection method, with the display driver element 1 placed on the glass 2, a thermosetting resin 13 is injected between the display driver element 1 and the glass 2, and the display driver element 1 and the glass 2 are heated. Even if the resin 13 is cured, the display driver element 1 and the glass 2 can be connected. By doing so, curing by heating the ACF connecting material 12 and the resin 11 can be completed at once, so that the manufacturing process can be simplified.

半導体装置の突起状電極を異方性導電フィルムへ押圧し、異方性導電フィルムをバンプのみに転写させることによって確実な半導体装置と回路基板との接続が必要な用途にも適用できる。   By pressing the protruding electrode of the semiconductor device against the anisotropic conductive film and transferring the anisotropic conductive film only to the bumps, it can also be applied to applications that require a reliable connection between the semiconductor device and the circuit board.

本発明の実施の形態１に係る半導体装置の接続方法を示す図The figure which shows the connection method of the semiconductor device which concerns on Embodiment 1 of this invention. 本発明の実施の形態２に係る半導体装置の接続方法を示す図The figure which shows the connection method of the semiconductor device which concerns on Embodiment 2 of this invention. 本発明の実施の形態３に係る半導体装置の接続方法を示す図The figure which shows the connection method of the semiconductor device which concerns on Embodiment 3 of this invention. 本発明の実施の形態４に係る半導体装置の接続方法を示す図The figure which shows the connection method of the semiconductor device which concerns on Embodiment 4 of this invention. 本発明の実施の形態５に係る半導体装置の接続方法を示す図The figure which shows the connection method of the semiconductor device which concerns on Embodiment 5 of this invention.

符号の説明Explanation of symbols

１ 表示ドライバ素子
２ ガラス
３ バンプ
４ ＩＴＯ
５ 接続部材
６ ＡＣＦ
７ ベースフィルム
８ 導電粒子
９、１２ ＡＣＦ接続材
１０ ＮＣＦ
１１、１３ 樹脂 1 Display driver element 2 Glass 3 Bump 4 ITO
5 Connecting member 6 ACF
7 Base film 8 Conductive particles 9, 12 ACF connection material 10 NCF
11, 13 resin

Claims (7)

突起状電極であるバンプを形成した半導体装置を、導電粒子を含む異方性導電フィルムを介し、回路基板に形成した電極板へ接続させる接続方法であって、前記半導体装置の前記バンプを前記異方性導電フィルムへ押圧し、前記異方性導電フィルムを前記バンプのみに転写し、前記バンプと前記電極板が接続するよう前記半導体装置を前記回路基板に載置し、前記半導体装置を加圧および加熱して前記異方性導電フィルムを硬化させることを特徴とする半導体装置の接続方法。 A method of connecting a semiconductor device having bumps, which are projecting electrodes, to an electrode plate formed on a circuit board through an anisotropic conductive film containing conductive particles, wherein the bumps of the semiconductor device are Pressing the anisotropic conductive film, transferring the anisotropic conductive film only to the bumps, placing the semiconductor device on the circuit board so that the bumps and the electrode plate are connected, and pressurizing the semiconductor device And a method of connecting a semiconductor device, wherein the anisotropic conductive film is cured by heating. 前記半導体装置を前記回路基板へ載置する前に、予め前記回路基板面に非導電性フィルムを転写し、前記バンプと前記電極板が接続するよう前記半導体装置を前記回路基板に載置し、前記半導体装置を加圧および加熱して非導電性フィルムおよび前記異方性導電フィルムを硬化させることを特徴とする請求項１記載の半導体装置の接続方法。 Before placing the semiconductor device on the circuit board, a non-conductive film is transferred to the circuit board surface in advance, and the semiconductor device is placed on the circuit board so that the bump and the electrode plate are connected, 2. The method of connecting semiconductor devices according to claim 1, wherein the semiconductor device is pressurized and heated to cure the non-conductive film and the anisotropic conductive film. 前記半導体装置を前記回路基板へ載置し、前記半導体装置を加圧および加熱し、前記異方性導電フィルムを硬化させた後、前記半導体装置と前記回路基板の間に熱硬化性の樹脂を注入し、前記半導体装置と前記回路基板を加熱して前記樹脂を硬化させることを特徴とする請求項１記載の半導体装置の接続方法。 The semiconductor device is placed on the circuit board, and the semiconductor device is pressurized and heated to cure the anisotropic conductive film, and then a thermosetting resin is placed between the semiconductor device and the circuit board. 2. The method for connecting a semiconductor device according to claim 1, wherein the resin is cured by pouring and heating the semiconductor device and the circuit board. 前記半導体装置を前記回路基板へ載置した後に、前記半導体装置と前記回路基板の間に熱硬化性の樹脂を注入し、前記半導体装置を加圧および加熱して前記樹脂および前記異方性導電フィルムを硬化させることを特徴とする請求項１記載の半導体装置の接続方法。 After mounting the semiconductor device on the circuit board, a thermosetting resin is injected between the semiconductor device and the circuit board, and the semiconductor device is pressurized and heated to apply the resin and the anisotropic conductive material. 2. The method of connecting semiconductor devices according to claim 1, wherein the film is cured. 突起状電極であるバンプを形成した半導体装置を、導電粒子を含む異方性導電フィルムを介し、回路基板に形成した電極板へ圧着させる接続方法であって、前記回路基板に前記異方性導電フィルムを押圧し、前記電極板のみに前記異方性導電フィルムを転写し、前記半導体装置を前記回路基板に前記バンプと前記電極板が接続するよう載置し、前記半導体装置を加圧および加熱して異方性導電フィルムを硬化させることを特徴とする半導体装置の接続方法。 A method of connecting a semiconductor device having bumps, which are projecting electrodes, to an electrode plate formed on a circuit board via an anisotropic conductive film containing conductive particles, wherein the anisotropic conductive material is applied to the circuit board. The film is pressed, the anisotropic conductive film is transferred only to the electrode plate, the semiconductor device is placed on the circuit board so that the bump and the electrode plate are connected, and the semiconductor device is pressurized and heated. Then, the anisotropic conductive film is cured, and a method for connecting a semiconductor device is provided. 前記半導体装置を前記回路基板へ載置し、前記半導体装置を加圧および加熱した後、前記半導体装置と前記回路基板の間に熱硬化性の樹脂を注入し、前記半導体装置と前記回路基板を加熱して前記樹脂を硬化させることを特徴とする請求項５記載の半導体装置の接続方法。 After placing the semiconductor device on the circuit board and pressurizing and heating the semiconductor device, a thermosetting resin is injected between the semiconductor device and the circuit board, and the semiconductor device and the circuit board are mounted. 6. The method for connecting a semiconductor device according to claim 5, wherein the resin is cured by heating. 前記半導体装置を前記回路基板へ載置した後に、前記半導体装置と前記回路基板の間に熱硬化性の樹脂を注入し、前記半導体装置を加圧および加熱し、前記樹脂および前記異方性導電フィルムを硬化させることを特徴とする請求項５記載の半導体装置の接続方法。 After the semiconductor device is placed on the circuit board, a thermosetting resin is injected between the semiconductor device and the circuit board, the semiconductor device is pressurized and heated, and the resin and the anisotropic conductive material are injected. 6. The method of connecting semiconductor devices according to claim 5, wherein the film is cured.
JP2003364276A 2003-10-24 2003-10-24 Method of connecting semiconductor device Pending JP2005129757A (en)

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