CN117253830A - Spliced horizontal silicon boat for bearing silicon wafers and processing method - Google Patents
Spliced horizontal silicon boat for bearing silicon wafers and processing method Download PDFInfo
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- CN117253830A CN117253830A CN202311371131.6A CN202311371131A CN117253830A CN 117253830 A CN117253830 A CN 117253830A CN 202311371131 A CN202311371131 A CN 202311371131A CN 117253830 A CN117253830 A CN 117253830A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 162
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 162
- 239000010703 silicon Substances 0.000 title claims abstract description 162
- 235000012431 wafers Nutrition 0.000 title claims abstract description 102
- 238000003672 processing method Methods 0.000 title abstract description 8
- 238000000034 method Methods 0.000 claims abstract description 28
- 238000005520 cutting process Methods 0.000 claims description 95
- 238000003754 machining Methods 0.000 claims description 78
- 239000012188 paraffin wax Substances 0.000 claims description 28
- 239000010453 quartz Substances 0.000 claims description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 26
- 238000000227 grinding Methods 0.000 claims description 21
- 238000005488 sandblasting Methods 0.000 claims description 12
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 8
- 239000004576 sand Substances 0.000 claims description 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 7
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- 238000009835 boiling Methods 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 4
- 229910021645 metal ion Inorganic materials 0.000 claims description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 4
- 239000002210 silicon-based material Substances 0.000 claims description 4
- 238000002791 soaking Methods 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67326—Horizontal carrier comprising wall type elements whereby the substrates are vertically supported, e.g. comprising sidewalls
- H01L21/6733—Horizontal carrier comprising wall type elements whereby the substrates are vertically supported, e.g. comprising sidewalls characterized by a material, a roughness, a coating or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67326—Horizontal carrier comprising wall type elements whereby the substrates are vertically supported, e.g. comprising sidewalls
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The processing method of the spliced horizontal silicon boat for bearing the silicon wafers adopts sectional processing, and has the advantages of low processing difficulty, low material loss, low cost and high efficiency. The screw thread and the clamping groove are adopted for splicing and fixing, so that the cost is low, the strength is high, and the subsequent high-temperature environment is good in use adaptability and stability. Each splice part is a standard part and can be disassembled, and a certain part of the silicon boat can be singly replaced when damaged in the use process, so that the whole splice part is not required to be scrapped. Auxiliary processing is carried out without a matched tool. The invention also provides a spliced horizontal silicon boat for bearing the silicon wafers.
Description
Technical Field
The invention relates to the technical field of silicon boats, in particular to a spliced horizontal silicon boat for bearing silicon wafers and a processing method.
Background
Silicon wafers are the main substrate material of modern very large scale integrated circuits, and are generally integrated circuit-level semiconductor silicon wafers manufactured through the processes of crystal pulling, slicing, chamfering, lapping, etching, back sealing, polishing, cleaning and the like. Silicon wafer heat treatment is an important process in the processing of semiconductor devices or circuits, and comprises numerous processes such as cvd, oxidation, diffusion, annealing and the like, which occupy most of the integrated circuit manufacturing processes. There is a need for a carrier for loading semiconductor wafers, which is referred to in the industry as a boat, in which the semiconductor wafers are placed on the carrier and then placed in a heat treatment furnace for treatment.
The wafer boats currently on the market include quartz wafer boats, siliceous wafer boats and silicon carbide wafer boats. The quartz and silicon carbide materials have special defects, and under the condition of high temperature, the friction on the back surface of the wafer is caused by different thermal expansion coefficients, so that the defects of scratch, deformation and the like are generated, and the yield of products is further affected. Silicon as a fabrication material can effectively reduce this friction without damaging and contaminating the integrated circuit. The silicon wafer boat is divided into an integrated silicon boat and a welded silicon boat, the integrated silicon boat has high processing difficulty, various special tools and tools are needed, and the integrated silicon boat has high loss of processing materials and long processing time. The fusion type silicon boat adopts sectional processing, and the processing difficulty is low. However, the subsequent welding of the parts is required, the welding difficulty is high, the cost is high, and the welded part can be softened and broken when the device is used in a high-temperature environment in the later period.
Disclosure of Invention
In order to solve the technical problems in the prior art, in view of the foregoing, it is necessary to provide a method for processing a spliced horizontal silicon boat for carrying silicon wafers.
A method for processing a spliced horizontal silicon boat for bearing silicon wafers comprises the following steps,
s1: selecting a section of monocrystalline silicon rod with proper size, cutting the silicon rod by using a silicon carbide wire cutting machine to obtain four rectangular silicon wafers with the same thickness, and respectively carrying out flat grinding on each rectangular silicon wafer to ensure that the parallelism of the upper plane and the lower plane of each rectangular silicon wafer is kept within 0.05 mm;
s2: cutting 4 rectangular square bars on a rectangular silicon wafer, and carrying out finish machining on the outer contour and the outer R angle of each rectangular square bar;
s3: finishing positioning columns and end threaded holes at the two end parts of each rectangular square rod to obtain connecting rods;
s4: cutting 12 cylinders on a rectangular silicon wafer, and finishing the outer contour of the screw cap and the groove of the screw cap corresponding to the end part of each cylinder; fine machining external threads on the outer contour of each cylinder to obtain screws;
s5: finishing the outer contour of the residual rectangular silicon wafer, finishing an inner hole on the residual rectangular silicon wafer, and finishing the R angle of the outer contour of the residual rectangular silicon wafer to obtain a side plate;
s6: grinding step tool marks with the surfaces of the connecting rod, the side plates and the screws being larger than 0.01mm by utilizing a pneumatic grinder, and grinding burrs and broken edges of non-chamfered edges;
s7: removing threads of the connecting rod, the side plates and the screws by using a sand blasting kettle, and performing sand blasting treatment on the rest surfaces, wherein the sand blasting removal amount is ensured to be within 0.02 mm;
s8: four connecting rods are assembled on one side plate, the connecting positions are smeared with yellow paraffin after heating, and after cooling and bonding are stable, hooking and cutting are carried out by using a vertical machining center;
s9: and assembling each component, boiling and cleaning the assembled silicon boat, soaking and etching by using a hydrofluoric acid solution with a certain proportion, and taking out impurities and metal ions on the surface of the silicon boat.
Preferably, in step S2, the outer contour of the rectangular square bar is processed by the following steps,
a: the rectangular silicon wafer is adhered to a quartz plate by adopting yellow paraffin, clamped on a working platform, and subjected to contour roughing by utilizing a cutter with the diameter of 6mm, the sharpening thickness of 8mm and 80-120 meshes; the cutter adopts a contour spiral feeding mode, radially feeds 580-620 mm/min, axially feeds 480-520 mm/min, and has a lower cutting step distance of 0.1mm and a rotating speed of 8450-8550 r/min;
b: carrying out appearance finish machining by using a cutter with the diameter of 10mm, the sharpening thickness of 10mm and the 180-220 meshes; the cutter adopts a contour spiral feeding mode, radially feeds 980-1020 mm/min, axially feeds 480-520 mm/min, and has a lower cutting step distance of 0.03-0.05 mm and a rotating speed of 7450-7550 r/min.
Preferably, in the step S2, the outer R angle of the rectangular square rod is processed by adopting the following mode that a rectangular silicon rod is stuck on a quartz plate by adopting yellow paraffin to be clamped on a working platform, and R angle finish machining is carried out by utilizing a cutter with the diameter of 10mm, the sharpening thickness of 10mm and 180-220 meshes; the cutter adopts a contour spiral feeding mode, radially feeds 980-1020 mm/min, axially feeds 480-520 mm/min, and has a lower cutting step distance of 0.03-0.05 mm and a rotating speed of 7450-7550 r/min.
Preferably, in step S3, the threaded hole for processing the end of the rectangular square bar is formed by the following steps,
a: the rectangular silicon rod is erected, a yellow paraffin matched tool is adopted to bond the rectangular silicon rod on a quartz plate and is clamped on a working platform, and a cutter with the diameter of 30mm, the sharpening thickness of 8mm and 160-180 meshes is utilized to carry out positioning column appearance finish machining; the cutter adopts a contour spiral feeding mode, radial feeding is 780-820 mm/min, axial feeding is 480-520 mm/min, lower cutting step distance is 0.05-0.07 mm, and rotating speed is 6450-6550 r/min;
b: the diameter is 6mm, the sharpening thickness is 8mm, a cutter with 190-210 meshes is used for carrying out the bottom hole finish machining of the threaded hole, the cutter adopts a contour screw feeding mode, the radial feeding is 290-310 mm/min, the axial feeding is 190-210 mm/min, the lower cutting step distance is 0.02-0.04 mm, and the rotating speed is 8450-8550 r/min;
c: the internal thread finish machining is carried out by using a thread cutter with the diameter of 9.68mm and the tooth spacing of 3.5mm and 300 meshes, the cutter adopts a bottom-up screw feeding mode, the radial feeding is 30mm/min, the axial feeding is 30mm/min, the transverse cutting step distance is 0.3-0.4 mm, and the rotating speed is 8450-8550 r/min.
Preferably, in step S4, the machining of the screw takes place by means of the following steps,
a: the rectangular silicon wafer is adhered to a quartz plate by adopting yellow paraffin and clamped on a working platform, and the outline is coarsened by utilizing a cutter with the diameter of 6mm, the sharpening thickness of 8mm and the size of 90-110 meshes; the cutter adopts a contour spiral feeding mode, radial feeding is 380-420 mm/min, axial feeding is 290-310 mm/min, lower cutting step distance is 0.05mm, rotating speed is 8450-8550 r/min, and 12 cylinders are cut out on a rectangular silicon wafer;
b: carrying out appearance finish machining by using a cutter with the diameter of 30mm, the sharpening thickness of 10mm and 160-180 meshes; the cutter adopts a contour spiral feeding mode, radially feeds 480-520 mm/min, axially feeds 290-310 mm/min, has a lower cutting step distance of 0.03-0.05 mm and has a rotating speed of 6450-6550 r/min, and the outer contour of the end part of the cylinder is finished;
c: the cutter with the diameter of 2mm and the sharpening thickness of 5mm and 260-280 meshes is used for carrying out finish machining on the screw cap groove; the cutter adopts a straight line reciprocating feeding mode, radial feeding is 190-210 mm/min, axial feeding is 100mm/min, the lower cutting step distance is 0.03-0.05 mm, the rotating speed is 8450-8550 r/min, and a screw cap groove is finely machined on the end part of the cylinder;
d: the screw rod appearance finish machining is carried out by using a cutter with the diameter of 30mm, the sharpening thickness of 10mm and 160-180 meshes; the cutter adopts a contour spiral feeding mode, radial feeding is 490-510 mm/min, axial feeding is 290-310 mm/min, the lower cutting step distance is 0.03-0.05 mm, the rotating speed is 6450-6550 r/min, and the appearance of the cylinder is finished;
e: external thread finish machining is carried out by using a thread cutter with the diameter of 9.68mm and the tooth spacing of 3.5mm and 300 meshes; the cutter adopts a bottom-up spiral feeding mode, radial feeding is 30mm/min, axial feeding is 30mm/min, transverse cutting steps are 0.3-0.4 mm, the rotating speed is 8450-8550 r/min, and thread finish machining is carried out on the shape of the cylinder.
Preferably, in step S5, the machining side plate adopts the following steps,
a: the rectangular silicon wafer is adhered to a quartz plate by adopting yellow paraffin and clamped on a working platform, and the outer contour finish machining is carried out by utilizing a cutter with the diameter of 60mm, the sharpening thickness of 10mm and the granularity of 260-280 meshes, the cutter adopts a contour spiral feeding mode, the radial feeding speed is 980-1020 mm/min, the axial feeding speed is 290-310 mm/min, the lower cutting step distance is 0.05mm, and the rotating speed is 4450-4550 r/min;
b: the inner hole rough machining is carried out by using a cutter with the diameter of 10mm, the sharpening thickness of 8mm and the mesh of 190-210, the cutter adopts a contour spiral feeding mode, the radial feeding is 580-620 mm/min, the axial feeding is 290-310 mm/min, the lower cutting step distance is 0.05mm, and the rotating speed is 7450-7550 r/min;
c: the inner hole finish machining is carried out by using a cutter with the diameter of 6mm, the sharpening thickness of 8mm and the mesh of 190-210, the cutter adopts a contour spiral feeding mode, the radial feeding is 780-820 mm/min, the axial feeding is 290-310 mm/min, the lower cutting step distance is 0.03mm, and the rotating speed is 8450-8550 r/min;
d: the outer contour R angle finish machining is carried out by using a cutter with the diameter of 60mm, the sharpening thickness of 10mm and the diameter of 260-280 meshes, the cutter adopts a contour spiral feeding mode, the radial feeding speed is 980-1020 mm/min, the axial feeding speed is 290-310 mm/min, the lower cutting step distance is 0.05mm, and the rotating speed is 4450-4550R/min.
Preferably, in step S8, the hooking and cutting by the vertical machining center is performed by the following steps,
a: the assembled workpiece is stuck on a quartz plate by adopting yellow paraffin and clamped on a working platform, a cutter with the diameter of 100-120 mm, the sharpening thickness of 4mm and the mesh of 380-420 is used for carrying out the finish machining of a silicon wafer placing groove, the cutter adopts a contour circular arc feeding mode, the radial feeding is 30mm/min, the axial feeding is 20mm/min, the radial cutting step distance is 3-6 mm, and the rotating speed is 2450-2550 r/min;
b: the method comprises the steps of (1) carrying out finish machining on a silicon wafer placing groove by using a cutter with the diameter of 110mm and the sharpening thickness of 2mm and 390-410 meshes, wherein the cutter adopts a contour circular arc feeding mode, and is radially fed for 30mm/min, axially fed for 20mm/min, and radially fed for 3-6 mm in the cutting step distance and rotated for 2450-2550 r/min;
c: chamfering and finishing the silicon wafer placing groove by using a cutter with the diameter of 100-120 mm, the sharpening thickness of 4mm, the sharpening angle of 60 degrees and 380-420 meshes, wherein the cutter adopts a contour circular arc feeding mode, the radial feeding is 30mm/min, the axial feeding is 20mm/min, the radial cutting step distance is 2-4 mm, and the rotating speed is 2450-2550 r/min.
Preferably, in step S8, the screw is mounted by injecting 480-520 mesh grinding sand and water into the threaded hole of the connecting rod after a certain proportion, then slightly rotating the screw to make the internal and external threads generate friction through rotation, and under the action of the grinding sand, the redundant silicon material will be worn out and flow out, and gradually screwing the screw into the threaded hole of the connecting rod through continuous reciprocating rotation.
It is also necessary to provide a tiled horizontal silicon boat for carrying silicon wafers.
The spliced horizontal silicon boat for carrying the silicon wafers is manufactured by the method for manufacturing the spliced horizontal silicon boat for carrying the silicon wafers.
Preferably, the spliced horizontal silicon boat comprises a connecting rod and side plates symmetrically arranged at two ends of the connecting rod; positioning columns are arranged at the two ends of the connecting rod, threaded holes are formed in the ends of the positioning columns, silicon wafer placing grooves are formed in the connecting rod, and the silicon wafer placing grooves are uniformly distributed along the connecting rod at equal intervals; the side plate is provided with a positioning hole matched with the positioning column, the side plate is provided with a screw cap counter bore concentric with the positioning hole, a screw capable of fixing the connecting rod and the side plate together is arranged in the screw cap counter bore, and the side plate is provided with a T-shaped through hole.
Compared with the prior art, the processing method of the spliced horizontal silicon boat for bearing the silicon wafers provided by the invention adopts sectional processing, and has the advantages of low processing difficulty, low material loss, low cost and high efficiency. The screw thread and the clamping groove are adopted for splicing and fixing, so that the cost is low, the strength is high, and the subsequent high-temperature environment is good in use adaptability and stability. Each splice part is a standard part and can be disassembled, and a certain part of the silicon boat can be singly replaced when damaged in the use process, so that the whole splice part is not required to be scrapped. Auxiliary processing is carried out without a matched tool.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed for the description of the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic view of a structure of a spliced horizontal silicon boat of the present invention.
Fig. 2 is a schematic structural view of the connecting rod of the present invention.
Fig. 3 is a schematic structural view of a side plate of the present invention.
FIG. 4 is a schematic processing diagram of the connecting rod of the present invention.
Fig. 5 is a schematic view of the processing of the screw of the present invention.
Fig. 6 is a schematic processing view of a side plate according to the present invention.
Fig. 7 is a schematic illustration of the assembly of the present invention.
In the figure: connecting rod 01, curb plate 02, reference column 03, screw hole 04, silicon chip standing groove 05, locating hole 06, screw cap counter bore 07, T type through-hole 08.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the description of the present invention, it should be understood that the terms "upper," "middle," "outer," "inner," "lower," and the like are used for indicating orientations or positional relationships, merely to facilitate the description of the present invention and simplify the description, and do not indicate or imply that the components or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and are not to be construed as limiting the present invention.
Example 1
The invention provides a processing method of a spliced horizontal silicon boat for bearing silicon wafers, which comprises the following steps,
s1: and selecting a section of monocrystalline silicon rod with proper size, cutting the silicon rod by using a silicon carbide wire cutting machine to obtain four rectangular silicon wafers with the same thickness, and respectively carrying out flat grinding processing on each rectangular silicon wafer to ensure that the parallelism of the upper plane and the lower plane of each rectangular silicon wafer is kept within 0.05 mm.
S2: 4 rectangular square bars are cut out of a rectangular silicon wafer, and the outer contour and the outer R angle of each rectangular square bar are subjected to finish machining.
S3: positioning columns 03 and end threaded holes 04 are finished at the two end parts of each rectangular square rod, and a connecting rod 01 is obtained.
S4: cutting 12 cylinders on a rectangular silicon wafer, and finishing the outer contour of the screw cap and the groove of the screw cap corresponding to the end part of each cylinder; and finishing external threads on the outer contour of each cylinder to obtain the screw.
S5: and (3) finishing the outer contour of the residual rectangular silicon wafer, finishing an inner hole on the residual rectangular silicon wafer, and finishing the R angle of the outer contour of the residual rectangular silicon wafer to obtain the side plate 02.
S6: and (3) grinding the step tool marks of which the surfaces are larger than 0.01mm on the connecting rod 01, the side plate 02 and the screw by utilizing a pneumatic grinder, and grinding burrs and broken edges of the non-chamfered edges.
S7: and (3) performing sand blasting treatment on the screw thread removing parts of the connecting rod 01, the side plates 02 and the screws by using a sand blasting kettle, wherein the sand blasting removal amount is ensured to be within 0.02 mm.
S8: four connecting rods 01 are assembled on one side plate 02, the joints are smeared with yellow paraffin after heating, and after cooling and bonding are stable, hooking and cutting are carried out by using a vertical machining center.
S9: and assembling each component, boiling and cleaning the assembled silicon boat, soaking and etching by using a hydrofluoric acid solution with a certain proportion, and taking out impurities and metal ions on the surface of the silicon boat.
In a specific implementation step, the outer contour of the rectangular square bar is processed by adopting the following steps,
a: the rectangular silicon wafer is adhered to a quartz plate by adopting yellow paraffin, clamped on a working platform, and subjected to contour cutting by utilizing a cutter with the diameter of 6mm, the sharpening thickness of 8mm and 120 meshes; the cutter adopts a contour spiral feeding mode, radially feeds 620mm/min, axially feeds 520mm/min, and has a lower cutting step distance of 0.1mm and a rotating speed of 8550 r/min;
b: carrying out appearance finish machining by using a cutter with the diameter of 10mm, the sharpening thickness of 10mm and 220 meshes; the cutter adopts a contour spiral feeding mode, is fed in the radial direction by 1020mm/min, is fed in the axial direction by 520mm/min, has a lower cutting step distance of 0.03-0.05 mm and has a rotating speed of 7550 revolutions/min.
In the specific implementation steps, the outer R angle of a rectangular square rod is processed by adopting the following mode that a rectangular silicon rod is bonded on a quartz plate by adopting yellow paraffin and clamped on a working platform, and R angle finish machining is carried out by utilizing a cutter with the diameter of 10mm, the sharpening thickness of 10mm and 220 meshes; the cutter adopts a contour spiral feeding mode, is fed in the radial direction by 1020mm/min, is fed in the axial direction by 520mm/min, has a lower cutting step distance of 0.03-0.05 mm and has a rotating speed of 7550 revolutions/min.
In a specific implementation step, the processing of the threaded hole 04 at the end of the rectangular square bar adopts the following steps,
a: the rectangular silicon rod is erected, a yellow paraffin matched tool is adopted to bond the rectangular silicon rod on a quartz plate and is clamped on a working platform, and a cutter with the diameter of 30mm, the sharpening thickness of 8mm and 180 meshes is utilized to carry out appearance finish machining on the positioning column 03; the cutter adopts a contour spiral feeding mode, the radial feeding is 820mm/min, the axial feeding is 520mm/min, the lower cutting step distance is 0.05-0.07 mm, and the rotating speed is 6550 revolutions/min;
b: the diameter of the cutter is 6mm, the sharpening thickness of the cutter is 8mm, the bottom hole of the threaded hole 04 is finished by a 210-mesh cutter, the cutter adopts a contour screw feeding mode, the radial feeding is 310mm/min, the axial feeding is 210mm/min, the lower cutting step distance is 0.02-0.04 mm, and the rotating speed is 8550 r/min;
c: the internal thread finish machining is carried out by using a thread cutter with the diameter of 9.68mm and the tooth spacing of 3.5mm and 300 meshes, the cutter adopts a bottom-up screw feeding mode, the radial feeding is 30mm/min, the axial feeding is 30mm/min, the transverse cutting step distance is 0.3-0.4 mm, and the rotating speed is 8550 r/min.
In a specific implementation, the machining of the screw takes place by means of the following steps,
a: the rectangular silicon wafer is adhered to a quartz plate by adopting yellow paraffin and clamped on a working platform, and the outline is coarsened by utilizing a cutter with the diameter of 6mm, the sharpening thickness of 8mm and 110 meshes; the cutter adopts a contour spiral feeding mode, radial feeding is 420mm/min, axial feeding is 310mm/min, the lower cutting step distance is 0.05mm, the rotating speed is 8550 r/min, and 12 cylinders are cut out on a rectangular silicon wafer;
b: carrying out appearance finish machining by using a cutter with the diameter of 30mm, the sharpening thickness of 10mm and the 180 meshes; the cutter adopts a contour spiral feeding mode, radially feeds 520mm/min, axially feeds 310mm/min, and has a lower cutting step distance of 0.03-0.05 mm and a rotating speed of 6550 revolutions/min, and the outer contour of the end part of the cylinder is subjected to finish machining;
c: carrying out finish machining on the screw cap groove by using a cutter with the diameter of 2mm, the sharpening thickness of 5mm and 280 meshes; the cutter adopts a straight line reciprocating feeding mode, radially feeds 210mm/min, axially feeds 100mm/min, and has a lower cutting step distance of 0.03-0.05 mm and a rotating speed of 8550 r/min, and finish-machines a screw cap groove on the end part of the cylinder;
d: the appearance finish machining of the screw rod is carried out by using a cutter with the diameter of 30mm, the sharpening thickness of 10mm and the 180 meshes; the cutter adopts a contour spiral feeding mode, radial feeding is 510mm/min, axial feeding is 310mm/min, the lower cutting step distance is 0.03-0.05 mm, the rotating speed is 6550 revolutions/min, and the appearance of the cylinder is finished;
e: external thread finish machining is carried out by using a thread cutter with the diameter of 9.68mm and the tooth spacing of 3.5mm and 300 meshes; the cutter adopts a bottom-up spiral feeding mode, radial feeding is 30mm/min, axial feeding is 30mm/min, transverse cutting steps are 0.3-0.4 mm, the rotating speed is 8550 r/min, and thread finish machining is carried out on the shape of the cylinder.
In a specific implementation step, the machining of the side plate 02 takes place by means of the following steps,
a: the rectangular silicon wafer is adhered to a quartz plate by adopting yellow paraffin and clamped on a working platform, and the outer contour finish machining is carried out by utilizing a cutter with the diameter of 60mm, the sharpening thickness of 10mm and 280 meshes, wherein the cutter adopts a contour spiral feeding mode, the radial feeding is 1020mm/min, the axial feeding is 310mm/min, the lower cutting step distance is 0.05mm, and the rotating speed is 4550 r/min;
b: the inner hole rough machining is carried out by using a cutter with the diameter of 10mm, the sharpening thickness of 8mm and 210 meshes, the cutter adopts a contour spiral feeding mode, the radial feeding is 620mm/min, the axial feeding is 310mm/min, the lower cutting step distance is 0.05mm, and the rotating speed is 7550 r/min;
c: the diameter is 6mm, the sharpening thickness is 8mm, the internal hole finish machining is carried out by a 210 mesh cutter, the cutter adopts a contour spiral feeding mode, the radial feeding is 820mm/min, the axial feeding is 310mm/min, the lower cutting step distance is 0.03mm, and the rotating speed is 8550 r/min;
d: the diameter of the cutter is 60mm, the sharpening thickness of the cutter is 10mm, the outer contour R angle finish machining is carried out by a 280-mesh cutter, the cutter adopts a contour spiral feeding mode, the radial feeding is 1020mm/min, the axial feeding is 310mm/min, the lower cutting step distance is 0.05mm, and the rotating speed is 4550R/min.
In a specific implementation step, the hooking and cutting by using the vertical machining center adopts the following steps,
a: the assembled workpiece is adhered to a quartz plate by adopting yellow paraffin and clamped on a working platform, a cutter with the diameter of 120mm, the sharpening thickness of 4mm and the mesh of 420 is used for carrying out the fine machining of a silicon wafer placing groove 05, the cutter adopts a contour circular arc feeding mode, the radial feeding is 30mm/min, the axial feeding is 20mm/min, the radial cutting step distance is 3-6 mm, and the rotating speed is 2550 r/min;
b: the diameter of the cutter is 110mm, the sharpening thickness is 2mm, the cutter with 410 meshes carries out the finish machining of the silicon wafer placing groove 05, the cutter adopts a contour circular arc feeding mode, the radial feeding is 30mm/min, the axial feeding is 20mm/min, the radial cutting step distance is 3-6 mm, and the rotating speed is 2550 r/min;
c: the diameter of 120mm, the sharpening thickness of 4mm, the sharpening angle of 60 degrees and the chamfering finish machining of the silicon wafer placing groove 05 are carried out by a 420-mesh cutter, the cutter adopts a contour circular arc feeding mode, the radial feeding is 30mm/min, the axial feeding is 20mm/min, the radial cutting step distance is 2-4 mm, and the rotating speed is 2550 r/min.
In the concrete implementation steps, the screw is installed by adopting the following mode, after grinding sand with 520 meshes is used for carrying out certain proportion with water, the screw is injected into the connecting rod 01 threaded hole 04, then the screw is slightly rotated, the internal and external threads generate friction through rotation, under the action of the grinding sand, the redundant silicon material is worn and flows out, and the screw is gradually screwed into the connecting rod 01 threaded hole 04 through continuous reciprocating rotation.
Example 2
The invention provides a processing method of a spliced horizontal silicon boat for bearing silicon wafers, which comprises the following steps,
s1: and selecting a section of monocrystalline silicon rod with proper size, cutting the silicon rod by using a silicon carbide wire cutting machine to obtain four rectangular silicon wafers with the same thickness, and respectively carrying out flat grinding processing on each rectangular silicon wafer to ensure that the parallelism of the upper plane and the lower plane of each rectangular silicon wafer is kept within 0.05 mm.
S2: 4 rectangular square bars are cut out of a rectangular silicon wafer, and the outer contour and the outer R angle of each rectangular square bar are subjected to finish machining.
S3: positioning columns 03 and end threaded holes 04 are finished at the two end parts of each rectangular square rod, and a connecting rod 01 is obtained.
S4: cutting 12 cylinders on a rectangular silicon wafer, and finishing the outer contour of the screw cap and the groove of the screw cap corresponding to the end part of each cylinder; and finishing external threads on the outer contour of each cylinder to obtain the screw.
S5: and (3) finishing the outer contour of the residual rectangular silicon wafer, finishing an inner hole on the residual rectangular silicon wafer, and finishing the R angle of the outer contour of the residual rectangular silicon wafer to obtain the side plate 02.
S6: and (3) grinding the step tool marks of which the surfaces are larger than 0.01mm on the connecting rod 01, the side plate 02 and the screw by utilizing a pneumatic grinder, and grinding burrs and broken edges of the non-chamfered edges.
S7: and (3) performing sand blasting treatment on the screw thread removing parts of the connecting rod 01, the side plates 02 and the screws by using a sand blasting kettle, wherein the sand blasting removal amount is ensured to be within 0.02 mm.
S8: four connecting rods 01 are assembled on one side plate 02, the joints are smeared with yellow paraffin after heating, and after cooling and bonding are stable, hooking and cutting are carried out by using a vertical machining center.
S9: and assembling each component, boiling and cleaning the assembled silicon boat, soaking and etching by using a hydrofluoric acid solution with a certain proportion, and taking out impurities and metal ions on the surface of the silicon boat.
In a specific implementation step, the outer contour of the rectangular square bar is processed by adopting the following steps,
a: the rectangular silicon wafer is adhered to a quartz plate by adopting yellow paraffin, clamped on a working platform, and subjected to contour roughing by utilizing a cutter with the diameter of 6mm, the sharpening thickness of 8mm and the size of 100 meshes; the cutter adopts a contour spiral feeding mode, radial feeding is 600mm/min, axial feeding is 500mm/min, the lower cutting step distance is 0.1mm, and the rotating speed is 8500 revolutions/min;
b: carrying out appearance finish machining by using a cutter with the diameter of 10mm, the sharpening thickness of 10mm and the mesh of 200; the cutter adopts a contour spiral feeding mode, radial feeding is 1000mm/min, axial feeding is 500mm/min, the lower cutting step distance is 0.03-0.05 mm, and the rotating speed is 7500 r/min.
In the specific implementation steps, the outer R angle of a rectangular square rod is processed by adopting the following mode that a rectangular silicon rod is bonded on a quartz plate by adopting yellow paraffin and clamped on a working platform, and R angle finish machining is carried out by utilizing a cutter with the diameter of 10mm, the sharpening thickness of 10mm and the mesh of 200; the cutter adopts a contour spiral feeding mode, radial feeding is 1000mm/min, axial feeding is 500mm/min, the lower cutting step distance is 0.03-0.05 mm, and the rotating speed is 7500 r/min.
In a specific implementation step, the processing of the threaded hole 04 at the end of the rectangular square bar adopts the following steps,
a: the rectangular silicon rod is erected, a yellow paraffin matched tool is adopted to bond the rectangular silicon rod on a quartz plate and clamped on a working platform, and a cutter with the diameter of 30mm, the sharpening thickness of 8mm and 170 meshes is utilized to carry out appearance finish machining on the positioning column 03; the cutter adopts a contour spiral feeding mode, radially feeds 800mm/min, axially feeds 500mm/min, and has a lower cutting step distance of 0.05-0.07 mm and a rotating speed of 6500 revolutions/min;
b: the diameter of the cutter is 6mm, the sharpening thickness of the cutter is 8mm, the cutter with 200 meshes carries out the finish machining of the bottom hole of the threaded hole 04, the cutter adopts a contour screw feeding mode, the radial feeding is 300mm/min, the axial feeding is 200mm/min, the lower cutting step distance is 0.02-0.04 mm, and the rotating speed is 8500 r/min;
c: the internal thread finish machining is carried out by using a thread cutter with the diameter of 9.68mm and the tooth spacing of 3.5mm and 300 meshes, the cutter adopts a bottom-up screw feeding mode, the radial feeding is 30mm/min, the axial feeding is 30mm/min, the transverse cutting step distance is 0.3-0.4 mm, and the rotating speed is 8500 r/min.
In a specific implementation, the machining of the screw takes place by means of the following steps,
a: the rectangular silicon wafer is adhered to a quartz plate by adopting yellow paraffin and clamped on a working platform, and the outline is formed and coarsened by utilizing a cutter with the diameter of 6mm, the sharpening thickness of 8mm and the size of 100 meshes; the cutter adopts a contour spiral feeding mode, radial feeding is 400mm/min, axial feeding is 300mm/min, the lower cutting step distance is 0.05mm, the rotating speed is 8500 revolutions/min, and 12 cylinders are cut out on a rectangular silicon wafer;
b: carrying out appearance finish machining by using a cutter with the diameter of 30mm, the sharpening thickness of 10mm and 170 meshes; the cutter adopts a contour spiral feeding mode, radially feeds 500mm/min, axially feeds 300mm/min, and has a lower cutting step distance of 0.03-0.05 mm and a rotating speed of 6500 r/min, and the outer contour of the end part of the cylinder is subjected to finish machining;
c: the cutter with the diameter of 2mm and the sharpening thickness of 5mm and 270 meshes is used for carrying out finish machining on the screw cap groove; the cutter adopts a straight line reciprocating feeding mode, radially feeds 200mm/min, axially feeds 100mm/min, and has a lower cutting step distance of 0.03-0.05 mm and a rotating speed of 8500 r/min, and finish-machines a screw cap groove on the end part of the cylinder;
d: the screw rod appearance finish machining is carried out by using a cutter with the diameter of 30mm, the sharpening thickness of 10mm and 170 meshes; the cutter adopts a contour spiral feeding mode, radially feeds 500mm/min, axially feeds 300mm/min, and has a lower cutting step distance of 0.03-0.05 mm and a rotating speed of 6500 r/min, and the appearance of the cylinder is finely machined;
e: external thread finish machining is carried out by using a thread cutter with the diameter of 9.68mm and the tooth spacing of 3.5mm and 300 meshes; the cutter adopts a bottom-up spiral feeding mode, radial feeding is 30mm/min, axial feeding is 30mm/min, transverse cutting steps are 0.3-0.4 mm, the rotating speed is 8500 revolutions/min, and thread finish machining is carried out on the shape of the cylinder.
In a specific implementation step, the machining of the side plate 02 takes place by means of the following steps,
a: the rectangular silicon wafer is adhered to a quartz plate by adopting yellow paraffin and clamped on a working platform, and outer contour finish machining is carried out by utilizing a cutter with the diameter of 60mm, the sharpening thickness of 10mm and 270 meshes, wherein the cutter adopts a contour spiral feeding mode, and is radially fed by 1000mm/min, axially fed by 300mm/min and has a lower cutting step distance of 0.05mm and a rotating speed of 4500 r/min;
b: the internal hole rough machining is carried out by using a cutter with the diameter of 10mm, the sharpening thickness of 8mm and 200 meshes, the cutter adopts a contour spiral feeding mode, the radial feeding is 580-620 mm/min, the axial feeding is 300mm/min, the lower cutting step distance is 0.05mm, and the rotating speed is 7500 r/min;
c: the inner hole finish machining is carried out by using a cutter with the diameter of 6mm, the sharpening thickness of 8mm and 200 meshes, the cutter adopts a contour spiral feeding mode, the radial feeding speed is 800mm/min, the axial feeding speed is 300mm/min, the lower cutting step distance is 0.03mm, and the rotating speed is 8500 revolutions/min;
d: the outer contour R angle finish machining is carried out by using a cutter with the diameter of 60mm, the sharpening thickness of 10mm and 270 meshes, the cutter adopts a contour spiral feeding mode, the radial feeding speed is 1000mm/min, the axial feeding speed is 300mm/min, the lower cutting step distance is 0.05mm, and the rotating speed is 4500R/min.
In a specific implementation step, the hooking and cutting by using the vertical machining center adopts the following steps,
a: the assembled workpiece is adhered to a quartz plate by adopting yellow paraffin and clamped on a working platform, a cutter with the diameter of 110mm, the sharpening thickness of 4mm and the granularity of 400 meshes is used for carrying out the fine machining of a silicon wafer placing groove 05, the cutter adopts a contour circular arc feeding mode, the radial feeding is carried out for 30mm/min, the axial feeding is carried out for 20mm/min, the radial cutting step distance is 3-6 mm, and the rotating speed is 2500 r/min;
b: the silicon wafer placing groove 05 is finished by a cutter with the diameter of 110mm, the sharpening thickness of 2mm and 400 meshes, the cutter adopts a contour circular arc feeding mode, the radial feeding is 30mm/min, the axial feeding is 20mm/min, the radial cutting step distance is 3-6 mm, and the rotating speed is 2500 rpm;
c: the chamfering and finishing of the silicon wafer placing groove 05 is carried out by using a cutter with the diameter of 110mm, the sharpening thickness of 4mm, the sharpening angle of 60 degrees and 400 meshes, the cutter adopts a contour circular arc feeding mode, the radial feeding is 30mm/min, the axial feeding is 20mm/min, the radial cutting step distance is 2-4 mm, and the rotating speed is 2500 r/min.
In the concrete implementation steps, the following mode is adopted when the screw is installed, after grinding sand with 500 meshes is used for carrying out certain proportion with water, the screw is injected into the connecting rod 01 threaded hole 04, then the screw is slightly rotated, the internal and external threads generate friction through rotation, under the action of the grinding sand, the redundant silicon material is worn and flows out, and the screw is gradually screwed into the connecting rod 01 threaded hole 04 through continuous reciprocating rotation.
The processing cutters used in the invention are grinding cutters formed by mixing and bonding metal and silicon carbide.
The spliced horizontal silicon boat for carrying the silicon wafers is processed by adopting a processing method of the spliced horizontal silicon boat for carrying the silicon wafers.
Specifically, the spliced horizontal silicon boat comprises a connecting rod 01 and side plates 02 symmetrically arranged at two ends of the connecting rod 01; positioning columns 03 are arranged at two ends of the connecting rod 01, threaded holes 04 are formed in the ends of the positioning columns 03, silicon wafer placing grooves 05 are formed in the connecting rod 01, and the silicon wafer placing grooves 05 are uniformly distributed along the connecting rod 01 at equal intervals; the side plate 02 is provided with a positioning hole 06 matched with the positioning column 03, the positioning hole 06 is used for fixing the connecting rod 01, so that the connecting rod 01 is vertical and stable, and the positioning hole 06 is slightly larger than the positioning column 03 on the connecting rod 01, so that the connecting rod is convenient to install and detach. The side plate 02 is provided with a screw cap counter bore 07 concentric with the positioning hole 06, and a screw capable of fixing the connecting rod 01 and the side plate 02 together is arranged in the screw cap counter bore 07. The screw cap counter bore 07 is in order to guarantee that the screw does not expose in the outside, bumps into the screw when preventing to transport the taking, leads to the screw to become loose and the screw fracture. The side plate 02 is provided with a T-shaped through hole 08. The T-shaped through holes 08 not only can facilitate the gas flow of the silicon boat in the use process, but also can be used as a hand holding position when the silicon boat is taken.
The foregoing disclosure is illustrative of the preferred embodiments of the present invention, and is not to be construed as limiting the scope of the invention, as it is understood by those skilled in the art that all or part of the above-described embodiments may be practiced with equivalents thereof, which fall within the scope of the invention as defined by the appended claims.
Claims (10)
1. A method for processing a spliced horizontal silicon boat for bearing silicon wafers is characterized by comprising the following steps of: comprises the steps of,
s1: selecting a section of monocrystalline silicon rod with proper size, cutting the silicon rod by using a silicon carbide wire cutting machine to obtain four rectangular silicon wafers with the same thickness, and respectively carrying out flat grinding on each rectangular silicon wafer to ensure that the parallelism of the upper plane and the lower plane of each rectangular silicon wafer is kept within 0.05 mm;
s2: cutting 4 rectangular square bars on a rectangular silicon wafer, and carrying out finish machining on the outer contour and the outer R angle of each rectangular square bar;
s3: finishing positioning columns and end threaded holes at the two end parts of each rectangular square rod to obtain connecting rods;
s4: cutting 12 cylinders on a rectangular silicon wafer, and finishing the outer contour of the screw cap and the groove of the screw cap corresponding to the end part of each cylinder; fine machining external threads on the outer contour of each cylinder to obtain screws;
s5: finishing the outer contour of the residual rectangular silicon wafer, finishing an inner hole on the residual rectangular silicon wafer, and finishing the R angle of the outer contour of the residual rectangular silicon wafer to obtain a side plate;
s6: grinding step tool marks with the surfaces of the connecting rod, the side plates and the screws being larger than 0.01mm by utilizing a pneumatic grinder, and grinding burrs and broken edges of non-chamfered edges;
s7: removing threads of the connecting rod, the side plates and the screws by using a sand blasting kettle, and performing sand blasting treatment on the rest surfaces, wherein the sand blasting removal amount is ensured to be within 0.02 mm;
s8: four connecting rods are assembled on one side plate, the connecting positions are smeared with yellow paraffin after heating, and after cooling and bonding are stable, hooking and cutting are carried out by using a vertical machining center;
s9: and assembling each component, boiling and cleaning the assembled silicon boat, soaking and etching by using a hydrofluoric acid solution with a certain proportion, and taking out impurities and metal ions on the surface of the silicon boat.
2. The method for processing a spliced horizontal silicon boat for carrying silicon wafers according to claim 1, wherein the method comprises the steps of: in the step S2, the outer contour of the rectangular square bar is processed by adopting the following steps,
a: the rectangular silicon wafer is adhered to a quartz plate by adopting yellow paraffin, clamped on a working platform, and subjected to contour roughing by utilizing a cutter with the diameter of 6mm, the sharpening thickness of 8mm and 80-120 meshes; the cutter adopts a contour spiral feeding mode, radially feeds 580-620 mm/min, axially feeds 480-520 mm/min, and has a lower cutting step distance of 0.1mm and a rotating speed of 8450-8550 r/min;
b: carrying out appearance finish machining by using a cutter with the diameter of 10mm, the sharpening thickness of 10mm and the 180-220 meshes; the cutter adopts a contour spiral feeding mode, radially feeds 980-1020 mm/min, axially feeds 480-520 mm/min, and has a lower cutting step distance of 0.03-0.05 mm and a rotating speed of 7450-7550 r/min.
3. The method for processing a spliced horizontal silicon boat for carrying silicon wafers according to claim 2, wherein the method comprises the steps of: in the step S2, the outer R angle of a rectangular square rod is processed by adopting the following mode that a rectangular silicon rod is bonded on a quartz plate by adopting yellow paraffin and clamped on a working platform, and R angle finish machining is carried out by utilizing a cutter with the diameter of 10mm, the sharpening thickness of 10mm and the 180-220 meshes; the cutter adopts a contour spiral feeding mode, radially feeds 980-1020 mm/min, axially feeds 480-520 mm/min, and has a lower cutting step distance of 0.03-0.05 mm and a rotating speed of 7450-7550 r/min.
4. The method for processing a spliced horizontal silicon boat for carrying silicon wafers according to claim 1, wherein the method comprises the steps of: in step S3, the step of machining the threaded hole at the end of the rectangular square bar is performed,
a: the rectangular silicon rod is erected, a yellow paraffin matched tool is adopted to bond the rectangular silicon rod on a quartz plate and is clamped on a working platform, and a cutter with the diameter of 30mm, the sharpening thickness of 8mm and 160-180 meshes is utilized to carry out positioning column appearance finish machining; the cutter adopts a contour spiral feeding mode, radial feeding is 780-820 mm/min, axial feeding is 480-520 mm/min, lower cutting step distance is 0.05-0.07 mm, and rotating speed is 6450-6550 r/min;
b: the diameter is 6mm, the sharpening thickness is 8mm, a cutter with 190-210 meshes is used for carrying out the bottom hole finish machining of the threaded hole, the cutter adopts a contour screw feeding mode, the radial feeding is 290-310 mm/min, the axial feeding is 190-210 mm/min, the lower cutting step distance is 0.02-0.04 mm, and the rotating speed is 8450-8550 r/min;
c: the internal thread finish machining is carried out by using a thread cutter with the diameter of 9.68mm and the tooth spacing of 3.5mm and 300 meshes, the cutter adopts a bottom-up screw feeding mode, the radial feeding is 30mm/min, the axial feeding is 30mm/min, the transverse cutting step distance is 0.3-0.4 mm, and the rotating speed is 8450-8550 r/min.
5. The method for processing a spliced horizontal silicon boat for carrying silicon wafers according to claim 1, wherein the method comprises the steps of: in step S4, the screw is processed by the following steps,
a: the rectangular silicon wafer is adhered to a quartz plate by adopting yellow paraffin and clamped on a working platform, and the outline is coarsened by utilizing a cutter with the diameter of 6mm, the sharpening thickness of 8mm and the size of 90-110 meshes; the cutter adopts a contour spiral feeding mode, radial feeding is 380-420 mm/min, axial feeding is 290-310 mm/min, lower cutting step distance is 0.05mm, rotating speed is 8450-8550 r/min, and 12 cylinders are cut out on a rectangular silicon wafer;
b: carrying out appearance finish machining by using a cutter with the diameter of 30mm, the sharpening thickness of 10mm and 160-180 meshes; the cutter adopts a contour spiral feeding mode, radially feeds 480-520 mm/min, axially feeds 290-310 mm/min, has a lower cutting step distance of 0.03-0.05 mm and has a rotating speed of 6450-6550 r/min, and the outer contour of the end part of the cylinder is finished;
c: the cutter with the diameter of 2mm and the sharpening thickness of 5mm and 260-280 meshes is used for carrying out finish machining on the screw cap groove; the cutter adopts a straight line reciprocating feeding mode, radial feeding is 190-210 mm/min, axial feeding is 100mm/min, the lower cutting step distance is 0.03-0.05 mm, the rotating speed is 8450-8550 r/min, and a screw cap groove is finely machined on the end part of the cylinder;
d: the screw rod appearance finish machining is carried out by using a cutter with the diameter of 30mm, the sharpening thickness of 10mm and 160-180 meshes; the cutter adopts a contour spiral feeding mode, radial feeding is 490-510 mm/min, axial feeding is 290-310 mm/min, the lower cutting step distance is 0.03-0.05 mm, the rotating speed is 6450-6550 r/min, and the appearance of the cylinder is finished;
e: external thread finish machining is carried out by using a thread cutter with the diameter of 9.68mm and the tooth spacing of 3.5mm and 300 meshes; the cutter adopts a bottom-up spiral feeding mode, radial feeding is 30mm/min, axial feeding is 30mm/min, transverse cutting steps are 0.3-0.4 mm, the rotating speed is 8450-8550 r/min, and thread finish machining is carried out on the shape of the cylinder.
6. The method for processing a spliced horizontal silicon boat for carrying silicon wafers according to claim 1, wherein the method comprises the steps of: in step S5, the process side plate adopts the following steps,
a: the rectangular silicon wafer is adhered to a quartz plate by adopting yellow paraffin and clamped on a working platform, and the outer contour finish machining is carried out by utilizing a cutter with the diameter of 60mm, the sharpening thickness of 10mm and the granularity of 260-280 meshes, the cutter adopts a contour spiral feeding mode, the radial feeding speed is 980-1020 mm/min, the axial feeding speed is 290-310 mm/min, the lower cutting step distance is 0.05mm, and the rotating speed is 4450-4550 r/min;
b: the inner hole rough machining is carried out by using a cutter with the diameter of 10mm, the sharpening thickness of 8mm and the mesh of 190-210, the cutter adopts a contour spiral feeding mode, the radial feeding is 580-620 mm/min, the axial feeding is 290-310 mm/min, the lower cutting step distance is 0.05mm, and the rotating speed is 7450-7550 r/min;
c: the inner hole finish machining is carried out by using a cutter with the diameter of 6mm, the sharpening thickness of 8mm and the mesh of 190-210, the cutter adopts a contour spiral feeding mode, the radial feeding is 780-820 mm/min, the axial feeding is 290-310 mm/min, the lower cutting step distance is 0.03mm, and the rotating speed is 8450-8550 r/min;
d: the outer contour R angle finish machining is carried out by using a cutter with the diameter of 60mm, the sharpening thickness of 10mm and the diameter of 260-280 meshes, the cutter adopts a contour spiral feeding mode, the radial feeding speed is 980-1020 mm/min, the axial feeding speed is 290-310 mm/min, the lower cutting step distance is 0.05mm, and the rotating speed is 4450-4550R/min.
7. The method for processing a spliced horizontal silicon boat for carrying silicon wafers according to claim 1, wherein the method comprises the steps of: in step S8, the hooking and cutting by the vertical machining center is performed by the following steps,
a: the assembled workpiece is stuck on a quartz plate by adopting yellow paraffin and clamped on a working platform, a cutter with the diameter of 100-120 mm, the sharpening thickness of 4mm and the mesh of 380-420 is used for carrying out the finish machining of a silicon wafer placing groove, the cutter adopts a contour circular arc feeding mode, the radial feeding is 30mm/min, the axial feeding is 20mm/min, the radial cutting step distance is 3-6 mm, and the rotating speed is 2450-2550 r/min;
b: the method comprises the steps of (1) carrying out finish machining on a silicon wafer placing groove by using a cutter with the diameter of 110mm and the sharpening thickness of 2mm and 390-410 meshes, wherein the cutter adopts a contour circular arc feeding mode, and is radially fed for 30mm/min, axially fed for 20mm/min, and radially fed for 3-6 mm in the cutting step distance and rotated for 2450-2550 r/min;
c: chamfering and finishing the silicon wafer placing groove by using a cutter with the diameter of 100-120 mm, the sharpening thickness of 4mm, the sharpening angle of 60 degrees and 380-420 meshes, wherein the cutter adopts a contour circular arc feeding mode, the radial feeding is 30mm/min, the axial feeding is 20mm/min, the radial cutting step distance is 2-4 mm, and the rotating speed is 2450-2550 r/min.
8. The method for processing a spliced horizontal silicon boat for carrying silicon wafers according to claim 1, wherein the method comprises the steps of: in step S8, the screw is installed by adopting the following mode that 480-520 mesh grinding sand and water are used for a certain proportion, then the mixture is injected into the threaded hole of the connecting rod, then the screw is slightly rotated, the internal and external threads generate friction through rotation, and under the action of the grinding sand, the redundant silicon material is worn and flows out, and the screw is gradually screwed into the threaded hole of the connecting rod through continuous reciprocating rotation.
9. A concatenation horizontal silicon boat for bearing silicon chip, its characterized in that: the method for processing the spliced horizontal silicon boat for carrying the silicon wafers according to any one of claims 1 to 8.
10. The tiled, horizontal silicon boat for carrying silicon wafers of claim 9 wherein: the spliced horizontal silicon boat comprises a connecting rod and side plates symmetrically arranged at two ends of the connecting rod; positioning columns are arranged at the two ends of the connecting rod, threaded holes are formed in the ends of the positioning columns, silicon wafer placing grooves are formed in the connecting rod, and the silicon wafer placing grooves are uniformly distributed along the connecting rod at equal intervals; the side plate is provided with a positioning hole matched with the positioning column, the side plate is provided with a screw cap counter bore concentric with the positioning hole, a screw capable of fixing the connecting rod and the side plate together is arranged in the screw cap counter bore, and the side plate is provided with a T-shaped through hole.
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