CN117157561A - 微透镜阵列及其制造方法 - Google Patents

微透镜阵列及其制造方法 Download PDF

Info

Publication number
CN117157561A
CN117157561A CN202280027086.XA CN202280027086A CN117157561A CN 117157561 A CN117157561 A CN 117157561A CN 202280027086 A CN202280027086 A CN 202280027086A CN 117157561 A CN117157561 A CN 117157561A
Authority
CN
China
Prior art keywords
microlens
pixel
base portion
microlens array
lens
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280027086.XA
Other languages
English (en)
Chinese (zh)
Inventor
岛崎智宽
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toppan Inc
Original Assignee
Toppan Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toppan Printing Co Ltd filed Critical Toppan Printing Co Ltd
Publication of CN117157561A publication Critical patent/CN117157561A/zh
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0037—Arrays characterized by the distribution or form of lenses
    • G02B3/0043—Inhomogeneous or irregular arrays, e.g. varying shape, size, height
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0037—Arrays characterized by the distribution or form of lenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0037—Arrays characterized by the distribution or form of lenses
    • G02B3/0056—Arrays characterized by the distribution or form of lenses arranged along two different directions in a plane, e.g. honeycomb arrangement of lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CN202280027086.XA 2021-04-14 2022-04-13 微透镜阵列及其制造方法 Pending CN117157561A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021-068397 2021-04-14
JP2021068397 2021-04-14
PCT/JP2022/017740 WO2022220271A1 (ja) 2021-04-14 2022-04-13 マイクロレンズアレイおよびその製造方法

Publications (1)

Publication Number Publication Date
CN117157561A true CN117157561A (zh) 2023-12-01

Family

ID=83640730

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280027086.XA Pending CN117157561A (zh) 2021-04-14 2022-04-13 微透镜阵列及其制造方法

Country Status (5)

Country Link
US (1) US20240036237A1 (https=)
JP (1) JPWO2022220271A1 (https=)
KR (1) KR20230169159A (https=)
CN (1) CN117157561A (https=)
WO (1) WO2022220271A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119403315A (zh) * 2023-07-25 2025-02-07 无锡晶湛半导体有限公司 一种发光器件结构及其制备方法
KR20250105747A (ko) 2023-12-29 2025-07-09 (주)애니캐스팅 마이크로 렌즈 어레이가 구비된 디스플레이 모듈 제조 방법
WO2026071148A1 (ja) * 2024-09-30 2026-04-02 ソニーセミコンダクタソリューションズ株式会社 光検出装置、撮像装置、および電子機器
US20260096273A1 (en) * 2024-09-30 2026-04-02 Seoul Semiconductor Co., Ltd. Light emitting device and display device including the same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7307788B2 (en) * 2004-12-03 2007-12-11 Micron Technology, Inc. Gapless microlens array and method of fabrication
US7068432B2 (en) * 2004-07-27 2006-06-27 Micron Technology, Inc. Controlling lens shape in a microlens array
JP5157436B2 (ja) 2007-10-11 2013-03-06 株式会社ニコン 固体撮像素子および撮像装置
JP2013021168A (ja) 2011-07-12 2013-01-31 Sony Corp 固体撮像装置、固体撮像装置の製造方法、電子機器
JP2014154662A (ja) * 2013-02-07 2014-08-25 Sony Corp 固体撮像素子、電子機器、および製造方法
JP2019091853A (ja) * 2017-11-16 2019-06-13 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子及び電子装置
WO2019220861A1 (ja) * 2018-05-16 2019-11-21 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および固体撮像素子の製造方法
CN109302565A (zh) * 2018-11-12 2019-02-01 德淮半导体有限公司 图像传感器及其制造方法

Also Published As

Publication number Publication date
US20240036237A1 (en) 2024-02-01
WO2022220271A1 (ja) 2022-10-20
JPWO2022220271A1 (https=) 2022-10-20
KR20230169159A (ko) 2023-12-15

Similar Documents

Publication Publication Date Title
CN117157561A (zh) 微透镜阵列及其制造方法
US6940654B1 (en) Lens array and method of making same
US20170077164A1 (en) Solid-state image sensor and image pickup apparatus
US8102460B2 (en) Solid-state imaging device
US8139131B2 (en) Solid state imaging device and fabrication method thereof, and camera incorporating the solid state imaging device
JP5022601B2 (ja) 固体撮像装置
JP4598680B2 (ja) 固体撮像装置及びカメラ
US9202833B2 (en) Imaging systems with baffle grids
KR20100005732A (ko) 시프트된 포토다이오드 위치를 픽셀 그룹 내에서 조정하기 위해 더 큰 렌즈의 어레이 위에 형성된 마이크로렌즈
US20070121212A1 (en) Controlling lens shape in a microlens array
US6495813B1 (en) Multi-microlens design for semiconductor imaging devices to increase light collection efficiency in the color filter process
JP2001160973A (ja) 固体撮像素子及び電子カメラ
US7656453B2 (en) Solid-state imaging device having characteristic color unit depending on color, manufacturing method thereof and camera
KR19980080644A (ko) 고체 촬상 소자
US7053952B2 (en) Image pickup apparatus
US20140375852A1 (en) Solid-state imaging apparatus, method of manufacturing the same, camera, imaging device, and imaging apparatus
KR20150141035A (ko) 이미지 센서
WO2020012860A1 (ja) 撮像素子および撮像素子の製造方法
JP2742185B2 (ja) 固体撮像装置
US7078258B2 (en) Image sensor and manufacturing method of image sensor
JP2018082002A (ja) 固体撮像素子および電子機器
JP3992713B2 (ja) Ｃｍｏｓイメージセンサー及びその製造方法
US8149322B2 (en) Image sensor with an improved sensitivity
JP6613648B2 (ja) 固体撮像素子および電子機器
CN115249723A (zh) 微透镜阵列及其形成方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination