JPWO2022220271A1 - - Google Patents

Info

Publication number
JPWO2022220271A1
JPWO2022220271A1 JP2023514673A JP2023514673A JPWO2022220271A1 JP WO2022220271 A1 JPWO2022220271 A1 JP WO2022220271A1 JP 2023514673 A JP2023514673 A JP 2023514673A JP 2023514673 A JP2023514673 A JP 2023514673A JP WO2022220271 A1 JPWO2022220271 A1 JP WO2022220271A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023514673A
Other languages
Japanese (ja)
Other versions
JPWO2022220271A5 (https=
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2022220271A1 publication Critical patent/JPWO2022220271A1/ja
Publication of JPWO2022220271A5 publication Critical patent/JPWO2022220271A5/ja
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00Simple or compound lenses
    • G02B3/0006Arrays
    • G02B3/0037Arrays characterized by the distribution or form of lenses
    • G02B3/0043Inhomogeneous or irregular arrays, e.g. varying shape, size, height
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/806Optical elements or arrangements associated with the image sensors
    • H10F39/8063Microlenses
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00Simple or compound lenses
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00Simple or compound lenses
    • G02B3/0006Arrays
    • G02B3/0037Arrays characterized by the distribution or form of lenses
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00Simple or compound lenses
    • G02B3/0006Arrays
    • G02B3/0037Arrays characterized by the distribution or form of lenses
    • G02B3/0056Arrays characterized by the distribution or form of lenses arranged along two different directions in a plane, e.g. honeycomb arrangement of lenses
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/805Coatings
    • H10F39/8053Colour filters
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/855Optical field-shaping means, e.g. lenses
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142Two-dimensional arrangements, e.g. asymmetric LED layout
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/036Manufacture or treatment of packages
    • H10H20/0363Manufacture or treatment of packages of optical field-shaping means

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2023514673A 2021-04-14 2022-04-13 Pending JPWO2022220271A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021068397 2021-04-14
PCT/JP2022/017740 WO2022220271A1 (ja) 2021-04-14 2022-04-13 マイクロレンズアレイおよびその製造方法

Publications (2)

Publication Number Publication Date
JPWO2022220271A1 true JPWO2022220271A1 (https=) 2022-10-20
JPWO2022220271A5 JPWO2022220271A5 (https=) 2024-01-25

Family

ID=83640730

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023514673A Pending JPWO2022220271A1 (https=) 2021-04-14 2022-04-13

Country Status (5)

Country Link
US (1) US20240036237A1 (https=)
JP (1) JPWO2022220271A1 (https=)
KR (1) KR20230169159A (https=)
CN (1) CN117157561A (https=)
WO (1) WO2022220271A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119403315A (zh) * 2023-07-25 2025-02-07 无锡晶湛半导体有限公司 一种发光器件结构及其制备方法
KR20250105747A (ko) 2023-12-29 2025-07-09 (주)애니캐스팅 마이크로 렌즈 어레이가 구비된 디스플레이 모듈 제조 방법
WO2026071148A1 (ja) * 2024-09-30 2026-04-02 ソニーセミコンダクタソリューションズ株式会社 光検出装置、撮像装置、および電子機器
US20260096273A1 (en) * 2024-09-30 2026-04-02 Seoul Semiconductor Co., Ltd. Light emitting device and display device including the same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7307788B2 (en) * 2004-12-03 2007-12-11 Micron Technology, Inc. Gapless microlens array and method of fabrication
US7068432B2 (en) * 2004-07-27 2006-06-27 Micron Technology, Inc. Controlling lens shape in a microlens array
JP5157436B2 (ja) 2007-10-11 2013-03-06 株式会社ニコン 固体撮像素子および撮像装置
JP2013021168A (ja) 2011-07-12 2013-01-31 Sony Corp 固体撮像装置、固体撮像装置の製造方法、電子機器
JP2014154662A (ja) * 2013-02-07 2014-08-25 Sony Corp 固体撮像素子、電子機器、および製造方法
JP2019091853A (ja) * 2017-11-16 2019-06-13 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子及び電子装置
WO2019220861A1 (ja) * 2018-05-16 2019-11-21 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および固体撮像素子の製造方法
CN109302565A (zh) * 2018-11-12 2019-02-01 德淮半导体有限公司 图像传感器及其制造方法

Also Published As

Publication number Publication date
US20240036237A1 (en) 2024-02-01
WO2022220271A1 (ja) 2022-10-20
CN117157561A (zh) 2023-12-01
KR20230169159A (ko) 2023-12-15

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