CN117146973B - Spherical aberration eliminating large area array detector, spherical aberration eliminating method and detector manufacturing method - Google Patents
Spherical aberration eliminating large area array detector, spherical aberration eliminating method and detector manufacturing method Download PDFInfo
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- CN117146973B CN117146973B CN202311434782.5A CN202311434782A CN117146973B CN 117146973 B CN117146973 B CN 117146973B CN 202311434782 A CN202311434782 A CN 202311434782A CN 117146973 B CN117146973 B CN 117146973B
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- 230000004075 alteration Effects 0.000 title claims abstract description 101
- 238000000034 method Methods 0.000 title claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 230000008030 elimination Effects 0.000 claims abstract description 45
- 238000003379 elimination reaction Methods 0.000 claims abstract description 45
- 238000002955 isolation Methods 0.000 claims abstract description 41
- 230000003287 optical effect Effects 0.000 claims abstract description 11
- 239000002086 nanomaterial Substances 0.000 claims abstract description 9
- 239000010410 layer Substances 0.000 claims description 77
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 15
- 238000003384 imaging method Methods 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 9
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 8
- 239000011241 protective layer Substances 0.000 claims description 7
- 238000004364 calculation method Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 239000002052 molecular layer Substances 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 238000012545 processing Methods 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 239000011574 phosphorus Substances 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
Abstract
The invention relates to the technical field of lasers, in particular to a large spherical aberration elimination area array detector, a spherical aberration elimination method and a detector manufacturing method, wherein the detector comprises a large area array detector main body, an isolation layer, a micro-nano structure and a protection layer, the micro-nano structure comprises a micro-nano spherical aberration elimination layer and a micro-nano spherical aberration elimination lens, one end of the isolation layer is connected with the surface of the large area array detector main body, and the other end of the isolation layer is connected with one end of the micro-nano spherical aberration elimination layer; the invention reduces the weight and the volume of an optical system, is convenient to install and adjust, and improves the capability of resisting mechanical vibration and the temperature stability.
Description
Technical Field
The invention relates to the technical field of lasers, in particular to an anti-spherical-aberration large-area-array detector, an anti-spherical-aberration method and a detector manufacturing method.
Background
The imaging quality of the detector is affected by an optical lens, and spherical aberration generated by the imaging lens directly affects the imaging quality, wherein the spherical aberration is an imaging defect caused by the lens surface shape, and once the spherical aberration exists, image points become dispersed spots with gradually weakened energy from the center to the edge, so that the imaging definition and resolution of the detector are affected. Currently, there are two general methods for eliminating spherical aberration, one is to correct spherical aberration by using a positive and negative lens combination, and the other is to eliminate spherical aberration by using an aspherical lens. The imaging lens is increased in number and weight, so that the volume of the detector is increased, the detector is greatly influenced by vibration, and the temperature stability is poor; the latter lens is difficult to process, high in cost, obvious in influence of temperature and vibration and not easy to integrate. Meanwhile, both methods are difficult to eliminate the influence of chromatic dispersion existing in the material on the imaging quality.
Disclosure of Invention
Therefore, the technical problem to be solved by the invention is to overcome the defects in the prior art, so as to provide an anti-spherical-aberration large-area-array detector, an anti-spherical-aberration method and a detector manufacturing method.
The spherical aberration eliminating large area array detector comprises a large area array detector main body, an isolation layer, a micro-nano structure and a protection layer;
the micro-nano structure comprises a micro-nano anti-spherical aberration layer and a micro-nano anti-spherical aberration lens, one end of the isolation layer is connected with the surface of the large area array detector main body, and the other end of the isolation layer is connected with one end of the micro-nano anti-spherical aberration layer; the other end of the micro-nano spherical aberration elimination layer is provided with a plurality of isolation grooves, the positions of the isolation grooves correspond to the positions of pixels in the large-area array detector main body, the micro-nano spherical aberration elimination lenses corresponding to the pixels are etched on the convex portions between the two isolation grooves, the curvature radiuses of the micro-nano spherical aberration elimination lenses at the positions of different aperture angles are different, and the protection layer is connected with the micro-nano spherical aberration elimination layer and the micro-nano spherical aberration elimination lenses.
Further, the isolation layer is a SiC layer, and the thickness of the SiC layer is 300nm.
Further, the micro-nano anti-spherical aberration layer is made of N-type silicon, and the thickness of the micro-nano anti-spherical aberration layer is 100 mu m.
Further, the N-type silicon is specifically: phosphorus was doped in silicon at a concentration higher than 2X 1020/cm 3.
Further, the isolation trench has a width of 10 μm and a depth of 50 μm.
Further, the protective layer is Al 2 O 3 The thickness of the Al2O3 layer is 1/4 of the center wavelength.
The invention also comprises an anti-spherical aberration method based on the anti-spherical aberration large area array detector, which specifically comprises the following steps: light rays with different aperture angles emitted by imaging object points are incident to the micro-nano spherical aberration elimination lens through the protective layer, and as the curvatures of the micro-nano spherical aberration elimination lens at pixel positions corresponding to different aperture angles are different, the deflection angles of the micro-lens at the pixel positions corresponding to different aperture angles to the incident light are different, so that spherical aberration is eliminated, and in the process, the micro-nano spherical aberration elimination lens can be adjusted in an electric modulation mode according to actual conditions.
The invention also comprises a manufacturing method of the spherical aberration elimination large area array detector, which comprises the following steps:
step one: an SiC layer with the epitaxial thickness of 300nm is used as an isolation layer at the working end of the large area array detector main body;
step two: depositing an N-type silicon layer with the thickness of 100 mu m on the basis of the isolation layer by adopting a PECVD technology;
step three: etching an isolation groove with the width of 10 mu m and the depth of 50 mu m on the N-type silicon layer at a position corresponding to the pixel in the large area array detector main body for positioning the micro-nano anti-spherical aberration lens;
step four: determining the spherical aberration of the detector at the pixel positions of different aperture angles according to the incident light of different aperture angles and through light path calculation, designing the surface of a plurality of micro-nano spherical aberration elimination lenses according to the spherical aberration of the pixel positions of different aperture angles, and etching and processing a plurality of micro-nano spherical aberration elimination lenses on the convex parts between two isolation grooves on the micro-nano spherical aberration elimination layer;
step five: etching different curvature radiuses on the outer surface of each micro-nano spherical aberration eliminating lens according to the position deviating from the optical axis;
step six: plating Al with thickness of 1/4 central wavelength outside the micro-nano layer of the micro-nano spherical aberration eliminating lens 2 O 3 Layer of Al 2 O 3 The layer is also connected with the micro-nano anti-spherical aberration layer.
According to the technical scheme, the micro-nano structure is integrated on the detector, the surface shapes of imaging lenses at different units are designed through optical path calculation according to incident light with different aperture angles, micro-nano layers with different curvatures are etched on the outer surface of each imaging lens according to the position deviating from an optical axis, so that deflection angles of the incident light at different pixels are different, deflection angle deviations of the light at different projection heights of a focusing lens are counteracted, spherical aberration is eliminated, the weight and the volume of an optical system are reduced, system integration is facilitated, installation and adjustment are facilitated, and mechanical vibration resistance and temperature stability are improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic view of the structure of the present invention
Fig. 2 is a schematic diagram of a micronano layer on an imaging lens.
Reference numerals illustrate:
1-a large area array detector body; 2-isolating layer; 3-a micro-nano spherical aberration eliminating layer;
4-isolation trenches; 5-a micro-nano spherical aberration eliminating lens; 6-a protective layer;
7-section of micro-nano aplanatic lens.
Detailed Description
The following description of the embodiments of the present invention will be made apparent and fully in view of the accompanying drawings, in which some, but not all embodiments of the invention are shown. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the description of the present invention, it should be noted that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
In addition, the technical features of the different embodiments of the present invention described below may be combined with each other as long as they do not collide with each other.
Referring to fig. 1 and 2, an anti-spherical aberration large area array detector includes a large area array detector main body 1, an isolation layer 2, a micro-nano structure and a protection layer 6;
the micro-nano structure comprises a micro-nano spherical aberration elimination layer 3 and a micro-nano spherical aberration elimination lens 5, one end of the isolation layer 2 is connected with the surface of the large area array detector main body 1, the other end of the isolation layer 2 is connected with one end of the micro-nano spherical aberration elimination layer 3, a plurality of isolation grooves 4 are formed in the other end of the micro-nano spherical aberration elimination layer 3, the positions of the isolation grooves 4 correspond to the positions of pixels in the large area array detector main body 1, the positions of the isolation grooves 4 correspond to the positions of the pixels in the large area array detector main body 1, the micro-nano spherical aberration elimination lens 5 corresponding to each pixel is etched on a protruding portion between the two isolation grooves 4, the curvature radiuses of the surfaces of the micro-nano spherical aberration elimination lenses 5 at different aperture angle positions are different, so that spherical aberration of incident light at different positions of the spherical surface of the imaging lenses is eliminated, and the protection layer 6 is connected with the micro-nano spherical aberration elimination layer 3 and the micro-nano spherical aberration elimination lenses 5 to protect the elements.
In this embodiment, the isolation layer 2 is a SiC layer, the thickness of the SiC layer is 300nm, and SiC has very high resistivity, so that the conductivity is very weak, and electrical isolation can be achieved; and SiC can not deform, degrade and the like under a strong electric field and high temperature, so that the anti-interference capability of the detector can be improved.
In this embodiment, the micro-nano anti-spherical aberration layer 3 is made of N-type silicon, specifically: doping concentration in silicon higher than 2×10 20 /cm 3 The thickness of the micro-nano anti-spherical aberration layer 3 is 100 mu m, so that enough optical machining allowance is provided for correcting spherical aberration, meanwhile, the high doping can realize the electric modulation of optical constants, and the dispersion of the material can be eliminated.
In this embodiment, the isolation trench 4 has a width of 10 μm and a depth of 50 μm.
In this embodiment, the protective layer 6 is Al 2 O 3 Layer of Al 2 O 3 The thickness of the layer is 1/4 of the central wavelength, al 2 O 3 Refractive index of 1.63, plating single-layer Al with optical thickness of 1/4 central wavelength 2 O 3 Can play an anti-reflection role on light rays, and the Al2O3 has high hardness and can play a protection role on elements at the same time.
The invention also comprises an anti-spherical aberration method based on the anti-spherical aberration large area array detector, which specifically comprises the following steps: light rays with different aperture angles emitted by imaging object points are incident to the micro-nano spherical aberration elimination lens 5 through the protective layer 6, and as the curvatures of the micro-nano spherical aberration elimination lens 5 at pixel positions corresponding to different aperture angles are different, the deflection angles of the micro-lenses at the pixel positions corresponding to different aperture angles to the incident light are different, so that spherical aberration is eliminated, in the process, the micro-nano spherical aberration elimination lens 5 can be regulated in an electric modulation mode according to actual conditions, the stability of a system in various environmental changes is improved, the environmental adaptability is enhanced, and meanwhile, the imaging quality of a detector is improved.
The invention also comprises a manufacturing method of the spherical aberration elimination large area array detector, which comprises the following steps:
step one: an SiC layer with the epitaxial thickness of 300nm is used as an isolation layer 2 at the working end of the large area array detector main body 1;
step two: depositing an N-type silicon layer with the thickness of 100 mu m on the basis of the isolation layer 2 by adopting a PECVD technology;
step three: etching an isolation groove 4 with the width of 10 mu m and the depth of 50 mu m on the N-type silicon layer at a position corresponding to the pixel in the large area array detector main body 1 for positioning the micro-nano anti-spherical aberration lens 5;
step four: determining the spherical aberration of the detector at the pixel positions of different aperture angles according to the incident light of different aperture angles and through light path calculation, designing the surface of a plurality of micro-nano spherical aberration elimination lenses 5 according to the spherical aberration of the pixel positions of different aperture angles, and etching and processing the convex parts between two isolation grooves 4 on the micro-nano spherical aberration elimination layer 3 to form a plurality of micro-nano spherical aberration elimination lenses 5;
step five: etching different curvature radiuses on the outer surface of each micro-nano spherical aberration eliminating lens 5 according to the position deviating from the optical axis;
step six: al with thickness of 1/4 central wavelength is plated outside the micro-nano layer of the micro-nano spherical aberration eliminating lens 5 2 O 3 Layer of Al 2 O 3 The layer is also connected with the micro-nano anti-spherical aberration layer 3.
It is apparent that the above examples are given by way of illustration only and are not limiting of the embodiments. Other variations or modifications of the above teachings will be apparent to those of ordinary skill in the art. It is not necessary here nor is it exhaustive of all embodiments. While still being apparent from variations or modifications that may be made by those skilled in the art are within the scope of the invention.
Claims (8)
1. The spherical aberration elimination large area array detector is characterized by comprising a large area array detector main body (1), an isolation layer (2), a micro-nano structure and a protection layer (6);
the micro-nano structure comprises a micro-nano spherical aberration elimination layer (3) and a micro-nano spherical aberration elimination lens (5), one end of the isolation layer (2) is connected with the surface of the large area array detector main body (1), and the other end of the isolation layer (2) is connected with one end of the micro-nano spherical aberration elimination layer (3); the other end of the micro-nano spherical aberration elimination layer (3) is provided with a plurality of isolation grooves (4), the positions of the isolation grooves (4) correspond to the positions of pixels in the large-area array detector main body (1), the micro-nano spherical aberration elimination lenses (5) corresponding to each pixel are etched and processed on the convex parts between the two isolation grooves (4), the curvature radiuses of the surfaces of the micro-nano spherical aberration elimination lenses (5) at the positions of different aperture angles are different, and the protection layer (6) is connected with the micro-nano spherical aberration elimination layer (3) and the micro-nano spherical aberration elimination lenses (5).
2. The large-area-array detector for eliminating spherical aberration according to claim 1, wherein the isolating layer (2) is a SiC layer, and the thickness of the SiC layer is 300nm.
3. The large-area-array aplanatic detector according to claim 1, wherein the material of the micro-nano aplanatic layer (3) is N-type silicon, and the thickness of the N-type silicon is 100 μm.
4. The large area array detector for eliminating spherical aberration according to claim 3, wherein the N-type silicon is specifically: doping concentration in silicon higher than 2×10 20 /cm 3 Is a phosphorus of (3).
5. The large area array of aplanatic detectors according to claim 1, wherein the isolation trenches (4) have a width of 10 μm and a depth of 50 μm.
6. The large area array detector for eliminating spherical aberration according to claim 5, wherein the protective layer (6) is Al 2 O 3 Layer of Al 2 O 3 The thickness of the layer was 1/4 of the center wavelength.
7. An anti-spherical aberration method based on the anti-spherical aberration large area array detector according to any one of claims 1 to 6, which is characterized by specifically comprising the following steps: light rays with different aperture angles emitted by imaging object points are incident to the micro-nano anti-spherical aberration lens (5) through the protective layer (6), and as the curvatures of the micro-nano anti-spherical aberration lens (5) at pixel positions corresponding to different aperture angles are different, the deflection angles of the micro-lenses at the pixel positions corresponding to different aperture angles to the incident light are different, so that spherical aberration is eliminated, and in the process, the micro-nano anti-spherical aberration lens (5) can be adjusted in an electric modulation mode according to actual conditions.
8. A method of manufacturing an aplanatic large area array detector as defined in claim 6, comprising the steps of:
step one: an SiC layer with the epitaxial thickness of 300nm is used as an isolation layer (2) at the working end of the large area array detector main body (1);
step two: depositing an N-type silicon layer with the thickness of 100 mu m on the basis of the isolation layer (2) by adopting a PECVD technology;
step three: etching an isolation groove (4) with the width of 10 mu m and the depth of 50 mu m on the N-type silicon layer at a position corresponding to the pixel in the large area array detector main body (1) for positioning the micro-nano anti-spherical aberration lens (5);
step four: determining the spherical aberration of the detector at the pixel positions of different aperture angles according to the incident light of different aperture angles and through light path calculation, designing the surface type of a plurality of micro-nano spherical aberration elimination lenses (5) according to the spherical aberration of the pixel positions of different aperture angles, and etching and processing the convex parts between two isolation grooves (4) on the micro-nano spherical aberration elimination layer (3) to form a plurality of micro-nano spherical aberration elimination lenses (5);
step five: etching different curvature radiuses on the outer surface of each micro-nano spherical aberration elimination lens (5) according to the position deviating from the optical axis;
step six: plating Al with thickness of 1/4 central wavelength outside the micro-nano layer of the micro-nano spherical aberration eliminating lens (5) 2 O 3 Layer of Al 2 O 3 The layer is also connected with a micro-nano anti-spherical aberration layer (3).
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