CN114551647A - Method for manufacturing large-diameter pixel-level refractive micro-lens for infrared photoelectric device - Google Patents
Method for manufacturing large-diameter pixel-level refractive micro-lens for infrared photoelectric device Download PDFInfo
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- 239000004642 Polyimide Substances 0.000 claims abstract description 31
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- 239000011248 coating agent Substances 0.000 claims abstract description 23
- 238000000576 coating method Methods 0.000 claims abstract description 23
- 238000001259 photo etching Methods 0.000 claims abstract description 19
- 230000008569 process Effects 0.000 claims abstract description 9
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- 238000000465 moulding Methods 0.000 claims abstract description 6
- 238000001465 metallisation Methods 0.000 claims abstract description 5
- 229920001486 SU-8 photoresist Polymers 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
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- 238000013461 design Methods 0.000 description 4
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- 238000005516 engineering process Methods 0.000 description 3
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- G—PHYSICS
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
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Abstract
The invention belongs to the field of semiconductor photoelectric device process manufacturing, and particularly relates to a method for manufacturing a large-diameter pixel-level refraction micro-lens for an infrared photoelectric device, namely an APD (avalanche photo diode) device is manufactured, the back surface of the APD device is thinned and polished to 300 mu m, and a micro-lens is manufactured on the back surface, wherein the method for manufacturing the micro-lens comprises the following steps: coating a SU8 cushion layer with the thickness of 50 μm on the surface of the back surface of the APD device, and curing the cushion layer at 200 ℃; performing polyimide coating on the cushion layer for the first time, wherein the thickness of the coated polyimide is 15 mu m, and performing photoetching after the coating is finished; performing secondary polyimide coating on the first polyimide after photoetching, wherein the thickness of the coated polyimide is 15 mu m, photoetching is performed after the coating is completed, and photoetching is performed on a PAD area; carrying out hot melting molding at 260 ℃, and carrying out metal deposition on the back of the reflector to finish the manufacturing of the micro lens; the invention improves the responsivity of the device and increases the incident angle of light.
Description
Technical Field
The invention belongs to the field of semiconductor photoelectric device process manufacturing, and particularly relates to a method for manufacturing a large-diameter pixel-level refraction micro-lens for an infrared photoelectric device.
Background
For the refractive microlens, the methods for manufacturing the microlens array reported at present mainly include a plane process ion exchange method, a photosensitive glass method, a holographic method, a fresnel zone lens method, a sol-gel method, a photoresist melting method, a PMMAX light irradiation and melting method. The secondary forming manufacturing method of the micro lens comprises a reactive ion etching method, an electron beam etching method and a laser etching method.
The larger patch glass type lens has inherent disadvantages in the aspects of focus offset, focal depth, incident angle and the like, and cannot meet the requirement of manufacturing devices with pixel sizes of about 200 mu m. In summary, the device faces the following problems that the prior art can not solve:
1. the device is an infrared pixel array, and in consideration of the isolation effect of an APD (avalanche photo diode) device, a 150-micron pixel can only design a photosensitive area with the thickness of about 120 microns at most, the filling factor of the device is only about 64%, and the design requirement that the filling factor is more than 90% cannot be met.
2. The sensitivity requirement is very high, and the detection threshold optical power at the wavelength of 905nm is less than 10 nW.
3. The incident angle is 30 degrees, and the pixel crosstalk is less than 5 percent. The thickness of the photosensitive element of the infrared device is generally far higher than that of a common detector, and the purpose of small pixel crosstalk cannot be achieved simultaneously under the condition of meeting a certain incident angle.
Disclosure of Invention
Aiming at the defects of insufficient curvature of a canopy, insufficient filling factor, difficult crosstalk inhibition, difficult arraying and the like in the existing microlens manufacturing technology, and the problems of overlarge focus offset, overlarge pixel crosstalk and the like of a chip glass microlens, the invention provides a method for manufacturing a large-diameter pixel-level refraction microlens for an infrared photoelectric device, which is used for preparing an APD device, thinning and polishing the back surface of the device to 300 mu m, manufacturing a microlens array on the back surface, and arranging each line of microlenses in the microlens array in a staggered way, wherein the process for manufacturing the microlens comprises the following steps:
coating a SU8 cushion layer with the thickness of 50 μm on the surface of the back surface of the APD device, and curing the cushion layer at 200 ℃;
performing polyimide coating on the cushion layer for the first time, wherein the thickness of the coated polyimide is 15 mu m, and performing photoetching after the coating is finished;
performing secondary polyimide coating on the first polyimide after photoetching, wherein the thickness of the coated polyimide is 15 mu m, photoetching is performed after the coating is completed, and photoetching is performed on a PAD area;
and carrying out hot melting molding at 260 ℃, and carrying out metal deposition on the back of the reflector to finish the manufacturing of the micro lens.
Further, the process of fabricating the APD device includes: and selecting a high-resistance epitaxial silicon wafer, and sequentially preparing a stop ring, a protection ring, a dielectric layer, an avalanche region, a photosensitive region, a contact hole and front metal on the high-resistance epitaxial silicon wafer.
Further, during the preparation process, the distance between the first polyimides of two adjacent microlenses is 5 μm.
Further, the diameter or maximum diagonal distance of the microlenses is greater than 200 microns.
Furthermore, the viscosity value of the SU8 photoresist is 7800-8200, and the viscosity value (cp value) of the polyimide is 800-1200.
Compared with the prior art, the lens generated by the invention has the advantages of improving the responsivity of the device, increasing the incident angle of light, improving the time resolution of the device, reducing the crosstalk of adjacent units, improving the effective pixel rate, reducing the optical power of the detection threshold, along with high duty ratio and low process cost.
Drawings
FIG. 1 is a schematic diagram of pixel crosstalk;
FIG. 2 transmittance test;
FIG. 3 is a diagram of a SEM measurement in accordance with an embodiment of the present invention;
FIG. 4 is a schematic diagram of the longitudinal structure of the absorption layer of an APD device of the present invention;
FIG. 5 is a schematic of the back reflector of the present invention;
FIG. 6 is a schematic diagram of a microlens of the present invention after completion of photolithography;
FIG. 7 is a schematic diagram of a microlens of the present invention after completion of thermal melting.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention provides a method for manufacturing a large-diameter pixel-level refraction micro-lens for an infrared photoelectric device, which comprises the following steps of preparing an APD device, thinning and polishing the back surface of the APD device to 300 mu m, manufacturing a micro-lens array on the back surface, wherein each row of micro-lenses in the micro-lens array are arranged in a staggered manner, and manufacturing the micro-lenses by the following steps:
coating a SU8 cushion layer with the thickness of 50 μm on the surface of the back surface of the APD device, and curing the cushion layer at 200 ℃;
performing polyimide coating on the cushion layer for the first time, wherein the thickness of the coated polyimide is 15 mu m, and performing photoetching after the coating is finished;
performing secondary polyimide coating on the first polyimide after photoetching, wherein the thickness of the coated polyimide is 15 mu m, photoetching is performed after the coating is completed, and photoetching is performed on a PAD area;
and carrying out hot melting molding at 260 ℃, and carrying out metal deposition on the back of the reflector to finish the manufacturing of the micro lens.
The micro-lens prepared by the method meets the requirement of more than 200 microns, the array manufacturing can be achieved, the center error is less than 2 microns, and the distance between the prepared micro-lens and the light entrance surface is less than 50 microns.
Aiming at the defects of insufficient curvature of a canopy layer, insufficient filling factor, difficult crosstalk inhibition, difficult arraying and the like in the existing microlens manufacturing technology and the problems of overlarge focus offset, overlarge pixel crosstalk and the like of a patch glass microlens, the embodiment provides a specific implementation process of a large-diameter pixel-level refraction microlens manufacturing method for an infrared photoelectric device.
First, in the aspect of material selection, the final underlayer of the present embodiment is selected from SU8 photoresist of a certain type, and the cap layer is selected from polyimide of a certain type. The cp value of selected SU8 is 8000 and the cp value of selected polyimide is 1000.
In the aspect of transmittance, after curing at 300 ℃, the transmittance of the two materials after integration is shown in fig. 2, wherein the upper part is glass, and the other curve is glue. At the target wavelength of 905nm of the device, the transmittance of the optical sheet is 92.76%, the transmittance of the test piece is 86.29%, and 86.29/92.76 is 93%, which meets the requirement of the project.
In terms of curvature, the lens crown needs to be high enough to meet the large curvature. The microlens thickness h was tested to be 73 μm, the cell aperture D was 147 μm, and the rise S was 33 μm. The curvature radius of the lens is 98.35 mu m through formula calculation, and the curvature radius is similar to the design parameters, so that the parameter requirements of the device can be met.
In terms of effective filling factor, the geometric dimension of the micro lens and the optical filling factor eta of the micro lens are measured1The equal parameter calculates the area ratio eta of the light passing through the micro lens and then entering the photosensitive area by the focusing light plate2The effective fill factor η is expressed as:
η＝η1×η2；
in the formula, eta is an effective filling factor and is dimensionless; eta 1 is the optical filling factor of the micro lens and has no dimension; eta 2 is the area ratio of the focused light spot entering the photosensitive surface, and is dimensionless.
The microlens cell actual size D1 was tested by SEM and its actual area SD1 was calculated, the microlens optical fill factor is expressed as:
η1＝SD1/SD；
in the formula: s. theD1Is the actual area of the microlens unit, in μm2；SDIs the area of the pixel, mum2。
Tests show that the microlens interval is 3 +/-2 mu m, namely the actual area of the microlens unit is more than or equal to 21025 mu m2. The pixel area is 22500 μm2. By calculating lightThe chemical filling factor eta 1 is more than or equal to 93.4 percent.
The method comprises the steps of adopting international ZEMAX optical design software to calculate, substituting parameters such as a refractive index of a micro-lens material, a curvature radius R of the micro-lens, a lens aperture D1, a lens thickness H, a working wavelength lambda, a distance H from the lens to a photosensitive surface, an incidence angle theta and the like into the software, and calculating to obtain a focusing spot radius R2. The working wavelength is 905nm, the incident angle is 0 degree, 30 degrees and 45 degrees, and the refractive index is 1.7481 after imidization of the polyimide material.
The radius R2 of the focusing light spot is calculated to be 58 μm, and the incident angle can meet the requirements of the device.
Half of the length and width of the photosensitive region is 60 μm larger than the radius of the focused light spot by 58 μm, and the alignment precision is only 40 nm. So that the focused spot is totally incident on the photosurface, i.e.. eta2The value is 1.
Therefore, the calculated effective filling factor of the detector is more than or equal to 93.4%, and the design requirement can be met.
The visible micro lens can collect light to the center of the device, and crosstalk among pixels is inhibited. Test results show that the response width of the pixel of the device without the integrated microlens is 118 μm, the response width of the pixel after the integrated microlens is 104 μm, namely the response range of the photosensitive area is reduced by 14 μm towards the center after the integrated microlens is manufactured. The test result shows that the pixel optical crosstalk is about 3.5% after the micro lens is integrated.
In this embodiment, because the product requires too high index requirements in terms of fill factor (greater than or equal to 90%), responsivity (greater than or equal to 55A/W @ M ═ 100), response non-uniformity (less than or equal to 8%), it is necessary to break through key technologies such as high fill factor, high pixel crosstalk suppression, dark current and noise suppression, response enhancement, uniformity improvement, and the like. To meet the project requirements, a high-resistance epitaxial material is needed, the longitudinal structure of the absorption layer of the APD device selected in this embodiment is schematically shown in fig. 4, and the structure needs a wide protection ring and a stop ring for pixel isolation, which limits the area size of a photosensitive region. If the pixel size is 150 μm, the width of the pixel isolation regions, guard and cut-off rings, will be up to 20 μm, which results in a photosensor width of only 110 μm, which results in a photosensitive area of only 53.78% of the total pixel area per pixel.
In order to achieve the filling factor and the high pixel crosstalk inhibition, only the micro-lens is still insufficient, the silicon wafer needs to be thinned after the front device is completed, then the micro-lens is manufactured, and then the back metal reflecting layer is manufactured. This configuration is shown in fig. 5. The front side APD device fabrication process includes:
selecting high-resistance epitaxial silicon wafers → manufacturing a stop ring → manufacturing a protection ring → manufacturing a dielectric layer → manufacturing an avalanche region → manufacturing a photosensitive region → manufacturing a contact hole → manufacturing front metal → thinning and polishing the back to 300 mu m.
The manufacturing process of the micro-lens structure comprises the following steps:
SU8 PAD coating 50 μm thick → 200 deg.C PAD curing → 15 μm first polyimide coating → first polyimide photo-etching → 15 μm second polyimide coating → second polyimide photo-etching plus PAD area photo-etching → 260 deg.C micro-lens hot melt molding → back side mirror metal deposition.
The microlens molding structure is shown in fig. 6, and the structure after heat fusion is shown in fig. 7.
In the description of the present invention, it is to be understood that the terms "coaxial", "bottom", "one end", "top", "middle", "other end", "upper", "one side", "top", "inner", "outer", "front", "center", "both ends", and the like, indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, are not to be construed as limiting the present invention.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "disposed," "connected," "fixed," "rotated," and the like are to be construed broadly, e.g., as meaning fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; the terms may be directly connected or indirectly connected through an intermediate, and may be communication between two elements or interaction relationship between two elements, unless otherwise specifically limited, and the specific meaning of the terms in the present invention will be understood by those skilled in the art according to specific situations.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (5)
1. A method for manufacturing a large-diameter pixel-level refraction micro lens for an infrared photoelectric device is characterized in that an APD device is manufactured, the back surface of the APD device is thinned and polished to 300 mu m, a micro lens array is manufactured on the back surface, each row of micro lenses in the micro lens array are arranged in a staggered mode, and the process for manufacturing the micro lenses comprises the following steps:
coating a SU8 photoresist cushion layer with the thickness of 50 μm on the surface of the back surface of the APD device, and curing the cushion layer at 200 ℃;
performing polyimide coating on the cushion layer for the first time, wherein the thickness of the coated polyimide is 15 mu m, and performing photoetching after the coating is finished;
performing secondary polyimide coating on the first polyimide after photoetching, wherein the thickness of the coated polyimide is 15 mu m, photoetching is performed after the coating is completed, and photoetching is performed on a PAD area;
and carrying out hot melting molding at 260 ℃, and carrying out metal deposition on the back of the reflector to finish the manufacturing of the micro lens.
2. The method of claim 1, wherein the fabricating the APD device comprises: and selecting a high-resistance epitaxial silicon wafer, and sequentially preparing a stop ring, a protection ring, a dielectric layer, an avalanche region, a photosensitive region, a contact hole and front metal on the high-resistance epitaxial silicon wafer.
3. The method as claimed in claim 1, wherein the distance between the polyimides of the first time of two adjacent microlenses is 5 μm during the manufacturing process.
4. A method of fabricating a large diameter pixel-level refractive microlens for an infrared optoelectronic device as claimed in claim 1, wherein the diameter or maximum diagonal distance of the microlens is greater than 200 μm.
5. The method for manufacturing a large-diameter pixel-level refractive microlens used for an infrared photoelectric device as claimed in claim 1, wherein the viscosity value of SU8 photoresist is 7800-8200, and the cp value of polyimide is 800-1200.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115421229A (en) * | 2022-09-19 | 2022-12-02 | 上海交通大学 | Photoetching-polishing direct forming manufacturing method of SU-8 micro lens array |
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- 2022-02-24 CN CN202210175592.5A patent/CN114551647A/en active Pending
Non-Patent Citations (2)
| Title |
|---|
| 郭安然 等: ""硅基线性模式APD焦平面研制"", 《半导体光电》, vol. 43, no. 05, pages 854 - 860 * |
| 金一敏: ""用于探测器的聚光微透镜阵列研究"", 《中国优秀硕士学位论文全文数据库信息科技辑》, pages 135 - 101 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115421229A (en) * | 2022-09-19 | 2022-12-02 | 上海交通大学 | Photoetching-polishing direct forming manufacturing method of SU-8 micro lens array |
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