CN113964214A - Micro-black silicon APD photoelectric detector and manufacturing method thereof - Google Patents
Micro-black silicon APD photoelectric detector and manufacturing method thereof Download PDFInfo
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- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
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Abstract
The invention discloses a micro-black silicon APD photoelectric detector and a manufacturing method thereof, wherein the detector comprises a detector body, the detector body comprises a micro-black array and a light transmission area which are sequentially arranged from bottom to top, the micro-black array comprises a plurality of micro-black body pixels distributed in an array manner, each micro-black body pixel comprises an absorption area, a front reflection area and a back reflection area which are oppositely arranged on the upper side and the lower side of the absorption area, and a side reflection area which is arranged between the front reflection area and the back reflection area and surrounds the absorption area; be equipped with a logical unthreaded hole on the front reflection district for near-infrared light passes through the light trap polymerization and by after the logical unthreaded hole jets into the absorption region, can make a round trip to reflect between front reflection district, back reflection district and side reflection district, realize the absorption region is to absorbing the absorption of near-infrared light repeatedly, increases the absorptivity of incident light, compromises breakdown voltage temperature coefficient and response time when improving photoelectric detector's sensitivity.
Description
Technical Field
The invention relates to the technical field of photoelectric detectors and manufacturing thereof, in particular to a micro-black silicon APD photoelectric detector and a manufacturing method thereof.
Background
The near-infrared silicon APD photoelectric detector has the advantages of high sensitivity, large gain, small dark current, low cost and the like, and is widely applied to the fields of three-dimensional imaging, laser ranging, low-light detection and the like. The near-infrared silicon APD photodetector generally adopts a pull-through (reach through) N + -P-pi-P + device structure, has the advantage of relatively small breakdown voltage compared with a common PN or PIN type APD, is the most device configuration adopted by the existing silicon APD, and mainly comprises a highly doped charge layer (N +), an avalanche multiplication region (P), an intrinsic absorption layer (pi), an anode contact layer (P +), a protection ring, a stop ring, an antireflection film and electrodes.
In order to obtain higher quantum efficiency (namely responsivity and sensitivity) in a near infrared band, the conventional near infrared silicon APD photoelectric detector generally increases the thickness of an absorption layer, but as the thickness of the absorption layer increases, the breakdown voltage temperature coefficient and the response time of the photoelectric detector also increase; and in order to reduce the temperature coefficient of breakdown voltage and response time, the thickness of the absorption layer is inevitably reduced, but the quantum efficiency is synchronously reduced along with the reduction of the thickness of the absorption layer, so that the performance improvement and the application range of the device are limited, and the near-infrared silicon APD photoelectric detector cannot simultaneously meet the performance requirements of high response rate, low temperature coefficient of breakdown voltage and small response time.
Disclosure of Invention
The invention aims to provide a micro-black silicon APD photoelectric detector and a manufacturing method thereof, and aims to solve the problem that quantum efficiency, breakdown voltage temperature coefficient and response time of a near-infrared silicon APD photoelectric detector in the prior art are optimized and contradictory.
In order to solve the above problems, a first aspect of the present invention provides a micro black silicon APD photodetector, including a detector body, where the detector body includes a micro black body array and a light transmission region, which are sequentially arranged from bottom to top, the micro black body array includes a plurality of micro black body pixels distributed in an array, each of the micro black body pixels includes an absorption region, a front reflection region and a back reflection region oppositely arranged on the upper and lower sides of the absorption region, and a side reflection region arranged between the front reflection region and the back reflection region and surrounding the absorption region; the front reflection area is provided with a light through hole, near infrared light is converged in the light through hole and enters the absorption area through the light through hole, and the front reflection area, the back reflection area and the side reflection area reflect back and forth to realize repeated absorption of the near infrared light by the absorption area.
Further, the micro black body pixel further comprises an avalanche multiplication region formed at the upper part of the absorption region, a high charge-doped layer formed on the upper surface of the avalanche multiplication region and contacting with the lower surface of the front reflection region, and a protection ring annularly arranged at the outer edge of the high charge-doped layer, wherein the diameter of the high charge-doped layer on the horizontal projection plane is larger than that of the avalanche multiplication region on the horizontal projection plane, so that the protection ring is annularly surrounded around the avalanche multiplication region at intervals; the avalanche multiplication region, the highly doped charge layer and the guard ring are all formed on the upper part of the absorption region in an injection or diffusion mode.
Furthermore, the micro black body pixel further comprises an anode contact layer which is formed at the bottom of the absorption region and corresponds to the upper surface of the back reflection region, a back electrode hole is formed in the back reflection region, and an anode electrode connected with the anode contact layer is formed in the back electrode hole; and a front electrode hole is formed in the front reflection region, and a cathode electrode connected with the high-doping charge layer is formed in the front electrode hole.
Further, the detector body includes from supreme back reflection stratum, absorbed layer and the front reflection stratum that sets gradually down, be formed with in the absorbed layer and be a plurality of isolation grooves of array distribution, isolation groove is along vertical link up the absorbed layer in order to incite somebody to action the absorbed layer separates the formation the absorbed area, it is provided with the encirclement to keep apart the ditch side reflection stratum that is provided with the absorbed area in order to form the side reflection district, the front reflection stratum and the back reflection stratum in the corresponding region in upper and lower both sides of absorbed area form respectively the front reflection district and the back reflection district of little black body pixel.
Further, the front reflection layer comprises a front passivation layer deposited on the upper surface of the absorption layer and a front reflection mirror deposited on the upper surface of the front passivation layer; the back reflection layer comprises a back passivation layer deposited below the absorption layer and a back reflection mirror deposited on the lower surface of the back passivation layer; the side reflective layer includes side passivation layers deposited on both sidewalls of the isolation trench and a side mirror deposited between the side passivation layers on both sides.
Further, the light-transmitting area comprises a micro-lens cushion layer formed on the upper surface of the front reflector and micro-lenses formed on the micro-lens cushion layer in one-to-one correspondence with the micro-black pixels, and the micro-lenses are coaxially arranged with the light-transmitting holes; the micro lens is a convex lens, and the thickness of the micro lens cushion layer is matched with the focal length of the convex lens.
Furthermore, the detector body further comprises a stop ring formed on the upper portion of the absorption layer, the stop ring is arranged around the micro black body array in a spacing ring mode, a front electrode groove is arranged on the front reflection layer in a position corresponding to the stop ring in a surrounding mode, and a stop ring electrode connected with the stop ring is formed in the front electrode groove.
Furthermore, the front reflector and the back reflector are formed by one or more of metal medium, oxide medium and non-oxide medium through combined deposition; the side reflector is formed by depositing a metal medium or by depositing a combination of a metal medium and an oxide medium.
Furthermore, an antireflection film is formed in the light through hole.
The second aspect of the present invention provides a method for manufacturing a micro black silicon APD photodetector, which is used for manufacturing the micro black silicon APD photodetector, and comprises the following steps:
s1: using high-resistance monocrystalline silicon material as an absorption layer;
s2: injecting or diffusing on the upper surface of the absorption layer to form a stop ring;
s3: forming a plurality of protective rings distributed in an array in the area, corresponding to the inner side of the stop ring, on the upper surface of the absorption layer; implanting or diffusing the upper surface of the absorption layer into the region corresponding to the inner side of each guard ring to form an avalanche multiplication region; and injecting the upper surface of the absorption layer into a region corresponding to the inner side of the guard ring to form a highly doped charge layer with an overlapped part with the guard ring;
s4: etching an isolation trench downwards in the peripheral area of the absorption layer corresponding to each protection ring to form a plurality of absorption areas distributed in an array mode, oxidizing or depositing the surface of the isolation trench to form a side passivation layer, and depositing filling materials on the surface of the side passivation layer in the isolation trench; removing the redundant filling material on the surface of the absorption layer to form a side reflector;
s5: depositing a front passivation layer and a front reflector on the upper surface of the absorption layer in sequence;
s6: etching downwards in the areas corresponding to each high-charge-doped layer on the front reflector and the front passivation layer to form light through holes corresponding to the high-charge-doped layers one by one, and depositing an antireflection film in the light through holes;
s7: etching downwards in the regions of the front reflector and the front passivation layer corresponding to each high-charge-doped layer to form front electrode holes corresponding to the high-charge-doped layers one by one, and depositing cathode electrodes in the front electrode holes; etching downwards in the regions corresponding to the stop rings on the front reflector and the front passivation layer to form a front electrode groove, and depositing a stop ring electrode in the front electrode groove;
s8: thinning the lower surface of the absorption layer;
s9: injecting an anode contact layer on the lower surface of the absorption layer;
s10: depositing a back passivation layer on the lower surface of the anode contact layer, and depositing a back reflector on the lower surface of the back passivation layer;
s11: etching upwards in the area corresponding to each absorption area on the back reflector and the back passivation layer to form back electrode holes corresponding to the absorption areas one by one, and depositing in the back electrode holes to form an anode electrode;
s12: and depositing a micro-lens cushion layer on the upper surface of the front reflector, and forming a micro-lens array on the surface of the micro-lens cushion layer to finish the manufacture of the micro black silicon APD photoelectric detector.
The invention gathers the incident near infrared light to the position of the light through hole by arranging the light transmission area, and the incident near infrared light is emitted into the micro black body pixel and absorbed by the absorption area, and the incompletely absorbed near infrared light is reflected back and forth among the front reflector, the side reflector and the back reflector, so that the absorption area can repeatedly absorb the incompletely absorbed near infrared light, thereby improving the absorptivity of the near infrared light and further improving the response rate of the photoelectric detector. In addition, the breakdown voltage temperature coefficient and the response time of the photoelectric detector can be further reduced by reducing the thickness of the absorption region, so that the comprehensive performance of the photoelectric detector is greatly improved.
Drawings
Fig. 1 is a schematic structural diagram of a micro black silicon APD photodetector according to a first embodiment of the present invention.
Fig. 2 is a schematic structural diagram of the micro blackbody pixel in fig. 1.
Fig. 3 is a schematic diagram of near infrared light absorption enhancement of the micro-blackbody pixel of fig. 2.
Fig. 4 is a flowchart of a method for manufacturing a micro black silicon APD photodetector according to a second embodiment of the present invention.
The reference numbers of the specification are as follows:
the detector comprises a detector body 100, a micro-black body array 1, a micro-black body pixel 11, an absorption region 11a, a front reflection region 11b, a back reflection region 11c, a side reflection region 11d, a light through hole 12, an antireflection film 13, an avalanche multiplication region 14, a high charge-doped layer 15, a guard ring 16, a light transmission region 2, a micro-lens array 21, a micro-lens 211, a micro-lens pad layer 22, an anode contact layer 3, a back electrode hole 41, an anode electrode 42, a front electrode hole 43, a cathode electrode 44, a front electrode groove 45, a stop ring electrode 46, a back reflection layer 5, a back passivation layer 51, a back reflection mirror 52, an absorption layer 6, a front reflection layer 7, a front passivation layer 71, a front reflection mirror 72, a side reflection layer 8, a side passivation layer 81, a side reflection mirror 82 and a stop ring 9.
Detailed Description
The invention will be further explained with reference to the drawings.
Example one
As shown in fig. 1, the micro black silicon APD photodetector of the embodiment includes a detector body 100, the detector body 100 includes a micro black body array 1 and a light transmission area 2 which are sequentially arranged from bottom to top, the light transmission area 2 is used for converging incident near infrared light, and the micro black body array 1 is used for detecting the near infrared light. The micro blackbody array 1 comprises a plurality of micro blackbody pixels 11 distributed in an array, and the micro blackbody pixels 11 repeatedly absorb near infrared light to increase the absorptivity of the near infrared light, so that the response rate (namely the sensitivity) of the photoelectric detector is improved.
As shown in fig. 2 and 3, the micro blackbody pixel 11 includes an absorption region 11a, a front reflection region 11b, a back reflection region 11c, and a side reflection region 11d, where the absorption region 11a is used for absorbing incident near-infrared light. The front reflection region 11b and the back reflection region 11c are oppositely disposed on the upper and lower sides of the absorption region 11a, and the side reflection region 11d is disposed between the front reflection region 11b and the back reflection region 11c and surrounding the absorption region 11a, and is used for reflecting near infrared light incompletely absorbed by the absorption region 11 a. The front reflection region 11b is provided with a light through hole 12 so as to facilitate the near infrared light to enter the absorption region 11 a; an antireflection film 13 is formed in the light passing hole 12 to increase light transmittance. In a specific implementation of this embodiment, the near-infrared light is irradiated on the transparent region 2, the transparent region 2 converges the near-infrared light to the position of the light-passing hole 12 by its light-converging effect and enters the absorption region 11a through the light-passing hole 12, the near-infrared light is gradually absorbed by the absorption region 11a in the process of propagating forward along the absorption region 11a, since only one light-passing hole 12 with a small diameter is provided on the front reflection region 11b, the incompletely absorbed near-infrared light can be reflected back and forth only in the space formed by the front reflection region 11b, the back reflection region 11c and the side reflection region 11d (the reflection process of the near-infrared light is shown in fig. 3), and further the absorption region 11a can repeatedly absorb the incident near-infrared light and cannot escape from the absorption region 11a (only a very small portion of the near-infrared light can escape from the light-passing hole 12) until the absorption region 11a is completely absorbed, to increase the absorption of near infrared light.
The micro black body pixel 11 further comprises an avalanche multiplication region 14, a high-doped charge layer 15 and a guard ring 16, wherein the avalanche multiplication region 14 is formed in the absorption region 11a on one side corresponding to the front reflection region 11b by adopting an ion implantation process or an impurity diffusion process and is used for forming a high electric field so that carriers are subjected to avalanche, and the multiplication of current is further realized; the highly doped charge layer 15 is formed in the absorption region 11a by an ion implantation process, and corresponds to the upper surface of the avalanche multiplication region 14, and the upper surface of the highly doped charge layer 15 is in contact with the front reflection region 11b, and the highly doped charge layer 15 is used for depleting the carriers generated by the avalanche multiplication region 14; the guard ring 16 is formed on the upper portion of the absorption region 11a by using an ion implantation process and a high temperature promotion process and is disposed around the outer edge of the highly charge-doped layer 15, so as to prevent the edge of the micro black body pixel 11 from being broken down. In this embodiment, the diameter of the highly doped layer 15 on the horizontal projection plane is larger than that of the avalanche multiplication region 14 on the horizontal projection plane, so that the guard ring 16 surrounds the avalanche multiplication region 14 at intervals (i.e. the inner edge of the guard ring 16 has a gap with the outer edge of the avalanche multiplication region 14, and the inner edge and the outer edge are not in contact with each other), so as to reduce the local electric field generated between the absorption region 11a and the avalanche multiplication region 14, increase the drift velocity of carriers, and further improve the frequency response. In other embodiments, when the required accuracy of the frequency response is relatively low or the process requirement is low, the diameter of the avalanche multiplication region 14 on the horizontal projection plane may also be equal to the diameter of the highly doped layer 15 on the horizontal projection plane, that is, the avalanche multiplication region 14 may also be disposed in contact with the guard ring 16, so as to reduce the difficulty of the fabrication process, improve the fabrication efficiency of the photodetector, and reduce the fabrication cost.
The micro blackbody pixel 11 further comprises an anode contact layer 3 formed at the bottom of the absorption region 11a and corresponding to the upper surface of the back reflection region 11c, and used for reducing anode contact resistance. A back electrode hole 41 is formed in the back reflection region 11c, an anode electrode 42 is formed in the back electrode hole 41, and the anode electrode 42 is connected to the anode contact layer 3; a front electrode hole 43 is formed in the front reflection region 11b, a cathode electrode 44 is formed in the front electrode hole 43, the cathode electrode 44 is connected to the highly doped charge layer 15, and the cathode electrode 44 generates a photoelectric effect after receiving an optical signal, so that generated photoelectrons accelerate to move to the anode electrode 42 under the action of the high electric field, and a photocurrent is formed at the anode electrode 42.
The detector body 100 comprises a back reflecting layer 5, an absorbing layer 6 and a front reflecting layer 7 which are sequentially arranged from bottom to top, wherein a plurality of isolation grooves (not marked in the figure) distributed in an array are formed in the absorbing layer 6, the isolation grooves vertically penetrate through the absorbing layer 6 to separate the absorbing layer 6 into the absorbing regions 11a, and each absorbing region 11a is mutually independent and is used for absorbing near infrared light. In this embodiment, the absorption layer 6 is made of a high-resistance monocrystalline silicon material. A side reflection layer 8 surrounding the absorption region 11a is arranged in the isolation groove to form the side reflection region 11d, and the side reflection layer 8 is used for reflecting near infrared light. Specifically, the side reflective layer 8 includes side passivation layers 81 deposited on two sidewalls of the isolation trench and a side mirror 82 deposited between the side passivation layers 81 on two sides, and the side passivation layers 81 are used to passivate the device surface of the photodetector to reduce dark current. The side mirror 82 is used for reflecting the near infrared light which is not completely absorbed to the absorption region 11a for repeated absorption; in this embodiment, the side mirrors 82 are deposited using a metal dielectric or a combination of a metal dielectric and an oxide dielectric (e.g., SiO2, etc.) or a non-oxide dielectric (e.g., Si3N4, etc.). The front reflection layer 7 and the back reflection layer 5 in the corresponding areas on the upper side and the lower side of the absorption area 11a form a front reflection area 11b and a back reflection area 11c of the micro black body pixel 11 respectively, and the front reflection layer 7 and the back reflection layer 5 are used for reflecting near infrared light. Specifically, the front reflection layer 7 includes a front passivation layer 71 deposited on the upper surface of the absorption layer 6 and a front mirror 72 deposited on the upper surface of the front passivation layer 71; the back reflection layer 5 comprises a back passivation layer 51 deposited below the absorption layer 6 and a back mirror 52 deposited on the lower surface of the back passivation layer 51; the front passivation layer 71 and the back passivation layer 51 are both used to passivate the device surface of the photodetector to reduce dark current. The front mirror 72 and the back mirror 52 are used to reflect the incompletely absorbed near infrared light back to the absorption region 11a for repeated absorption. In the present embodiment, the front mirror 72 and the back mirror 52 are deposited by using a metal medium (e.g., Al, Au, Ag, etc.), an oxide medium (SiO2, TiO2, etc.), or a non-oxide medium (e.g., Si3N4, MgF, etc.), or a combination of a metal medium and an oxide medium or a non-oxide medium.
The light-transmitting area 2 comprises a micro lens array 21 and a micro lens cushion 22, the micro lens array 21 comprises micro lenses 211 which are formed on the upper surface of the micro lens cushion 22 and are arranged in one-to-one correspondence with the micro black body pixels 11, and the micro lenses 211 are convex lenses and are used for condensing incident near infrared light. The micro lens 211 and the light through hole 12 are coaxially arranged, so that the micro lens 211 can converge near infrared light into the light through hole 12, most of the near infrared light can enter the absorption region 11a through the light through hole 12, and the external quantum efficiency of the photoelectric detector is guaranteed. In the present embodiment, the micro lens 211 is made of a high transmittance material, such as SiO2, PMMA, polyimide, etc. The microlens pad layer 22 is formed between the lower surface of the microlens array 21 and the upper surface of the front mirror 72, and the thickness of the microlens pad layer 22 is adapted to the focal length of the convex lens to adjust the focal length of the microlens 211.
The detector body 100 further comprises a stop ring 9 formed on the upper part of the absorption layer 6, and the stop ring 9 is arranged around the micro blackbody array 1 in a spaced ring mode and used for reducing the dark current of the whole photoelectric detector. A front electrode groove 45 is annularly arranged at a position, corresponding to the cut-off ring 9, on the front reflection layer 7, a cut-off ring electrode 46 connected with the cut-off ring 9 is formed in the front electrode groove 45, and the cut-off ring electrode 46 serves as a cathode electrode of the whole photoelectric detector and the anode electrode 42 (the photoelectric detector and the micro black body pixel 11 share one anode electrode 42) to jointly provide a basic potential for the photoelectric detector, so that the normal work of the photoelectric detector is ensured. In other embodiments, the front electrode groove 45 may be configured as a hole, a semi-arc groove structure, or an 1/4 arc groove structure, etc. according to specific process requirements, so as to reduce the difficulty of the manufacturing process.
When the embodiment works, the near infrared light irradiates on the light transmission region 2, the micro lens 211 condenses the near infrared light received in each region and transmits the condensed near infrared light to the light transmission hole 12 through the micro lens cushion 22 for convergence, the condensed near infrared light is incident into the absorption region 11a through the light transmission hole 12 and is absorbed by the absorption region 11a when the condensed near infrared light is transmitted forward along the absorption region 11a, and the incompletely absorbed near infrared light is continuously transmitted forward to the back reflection region 11c, the side reflection region 11d or the front reflection region 11b and is reflected back to the absorption region 11a for continuous absorption until the incompletely absorbed near infrared light is completely absorbed by the absorption region 11a, so that the absorption rate of the near infrared light is increased, the utilization rate of the near infrared light is improved, and the response rate of the photoelectric detector is further improved.
In addition, the incident angle of the near-infrared light can be changed in the embodiment, so that the direction of the near-infrared light entering the absorption region 11a is changed, the absorption length of the near-infrared light in the absorption region 11a is increased, the utilization rate of the near-infrared light can be further improved, and the internal quantum efficiency during the period is further improved; in addition, due to the arrangement of the micro lens 211, most of near infrared light can be absorbed in the absorption region 11a from the light through hole 12, so that the external quantum efficiency of the photoelectric detector is ensured, and the response rate of the photoelectric detector is further improved.
Example two
Fig. 4 is a flowchart of a method for fabricating a micro black silicon APD photodetector according to this embodiment. The method for manufacturing the micro black silicon APD photodetector in the embodiment includes the detector body 100 with the same or similar structure and function as the first embodiment, and can be used for manufacturing the micro black silicon APD photodetector in the first embodiment, and specifically includes the following steps:
s1: an absorbent layer 6 is provided.
Specifically, a high-resistance single crystal silicon material is used as the absorption layer 6 for absorbing the incident near-infrared light.
S2: a stop ring 9 is formed on the absorption layer 6.
Specifically, an ion implantation process or an impurity diffusion process is adopted to form a stop ring 9 on the upper surface of the absorption layer 6, and the stop ring 9 is used for reducing the dark current of the whole photoelectric detector.
S3: a guard ring 16, an avalanche multiplication region 14, and a highly doped charge layer 15 are formed on the absorption layer 6, respectively.
Specifically, firstly, a plurality of guard rings 16 distributed in an array are formed on the upper surface of the absorption layer 6 by sequentially adopting an ion implantation process and a high-temperature junction pushing process, the guard rings 16 are correspondingly formed in the area inside the stop ring 9, and the guard rings 16 are used for preventing the micro black body pixels 11 from being broken down.
Then, an avalanche multiplication region 14 is formed in a region of the upper surface of the absorption layer 6 corresponding to the inner side of each guard ring 16 by using an ion implantation process or an impurity diffusion process, and the avalanche multiplication region 14 is used for forming a high electric field in the absorption region 11a to realize current multiplication.
Finally, a highly doped charge layer 15 is formed on the upper surface of the absorption layer 6 in a region corresponding to the inner side of the guard ring 16 by using an ion implantation process, the outer edge of the highly doped charge layer 15 has an overlapping portion with the inner edge of the guard ring 16, and the highly doped charge layer 15 is used for depleting the carriers generated by the avalanche multiplication region 14.
In the embodiment, the steps S2 and S3 are not necessarily performed in the order, and may be performed alternatively according to the actual operating environment, for example, the step S3 is performed first and then the step S2 is performed.
S4: an isolation trench is etched into the absorber layer 6 and a side reflective layer 8 is deposited into the isolation trench.
Specifically, firstly, an ICP deep silicon etching process is used to form an isolation trench of the micro black body pixel 11 on the absorption layer 6 corresponding to the peripheral area of each guard ring 16, so as to isolate the absorption layer 6 to form a plurality of absorption regions 11a distributed in an array.
Then, a side passivation layer 81 is formed on the surface of the isolation trench using a thermal oxidation process or a deposition process, and the side passivation layer 81 is used to passivate the surface of the photodetector to reduce dark current.
Finally, depositing a filling material on the surface of the isolation trench corresponding to the side passivation layer 81 by using a deposition process to fill the isolation trench, wherein the filling material is a metal filling material (i.e., a metal medium in the first embodiment); and removing the excess filling material on the surface of the absorption layer 6 by using a CMP process or an etching-back process to form a side mirror 82, wherein the side mirror 82 is used for reflecting the near infrared light back to the absorption region 11 a. In this embodiment, the side mirrors 82 are deposited using a metal dielectric or a combination of a metal dielectric and an oxide dielectric (e.g., SiO2, etc.) or a non-oxide dielectric (e.g., Si3N4, etc.).
S5: a front reflective layer 7 is deposited on the upper surface of the absorbing layer 6.
Specifically, first, a front passivation layer 71 is formed on the upper surface of the absorption layer 6 by a dielectric deposition process, and the front passivation layer 71 is used for passivating the surface of the photodetector to reduce dark current.
Then, a front surface mirror 72 is formed on the upper surface of the front passivation layer 71 using a thin film deposition process, and the front surface mirror 72 serves to reflect near infrared light back to the absorption region 11 a. In the present embodiment, the front mirror 72 is deposited using a metal dielectric (e.g., Al, Au, Ag, etc.), an oxide dielectric (SiO2, TiO2, etc.), or a non-oxide dielectric (e.g., Si3N4, MgF, etc.).
S6: a light-passing hole 12 and an antireflection film 13 are formed.
Specifically, the light passing holes 12 are formed by etching downward in the regions of the front mirror 72 and the front passivation layer 71 corresponding to each highly doped charge layer 15 by a conventional process, and the light passing holes 12 are arranged in one-to-one correspondence with the highly doped charge layers 15 and used for passing near infrared light into the absorption layer 6. And then, depositing an antireflection film 13 in the light through hole 12 by adopting a film deposition process, wherein the antireflection film 13 is used for increasing the light transmittance of near infrared light.
S7: forming a cathode electrode 44
Specifically, first, the front surface electrode holes 43 are etched downward in the regions of the front surface mirror 72 and the front surface passivation layer 71 corresponding to each highly doped charge layer 15 by using an etching process, the front surface electrode holes 43 are arranged in one-to-one correspondence with the highly doped charge layers 15, and the cathode electrodes 44 are formed in the front surface electrode holes 43 by sequentially using a thin film deposition process and an etching process.
Then, an etching process is used to etch downward a front electrode groove 45 in the region corresponding to the stop ring 9 on the front mirror 72 and the front passivation layer 71, and a thin film deposition process and an etching process are sequentially used to form a stop ring electrode 46 in the front electrode groove 45.
S8: the lower surface of the absorption layer 6 is thinned.
Specifically, the lower surface of the absorption layer 6 is thinned. In this embodiment, the thickness of the absorption layer 6 after thinning is 3 μm to 300 μm.
S9: an anode contact layer 3 is formed on the lower surface of the absorption layer 6.
Specifically, an ion implantation process is adopted to form the anode contact layer 3 on the lower surface of the absorption layer 6 at a position corresponding to each absorption region 11a, and the anode contact layer 3 is used for reducing the anode contact resistance.
S10: a back reflection layer 5 is deposited on the lower surface of the anode contact layer 3.
Specifically, first, a back passivation layer 51 is deposited on the lower surface of the anode contact layer 3 by using a thin film deposition process, and the back passivation layer 51 is used for passivating the surface of the photodetector to reduce dark current.
Then, a back mirror 52 is deposited on the lower surface of the back passivation layer 51 by a thin film deposition process, and the back mirror 52 is used to reflect the incompletely absorbed near infrared light back to the absorption region 11 a. In the present embodiment, the front mirror 72 is deposited using a metal dielectric (e.g., Al, Au, Ag, etc.), an oxide dielectric (SiO2, TiO2, etc.), or a non-oxide dielectric (e.g., Si3N4, MgF, etc.).
S11: the anode electrode 42 is formed.
Specifically, a back electrode hole 41 is formed by etching upward in an area corresponding to each absorption region 11a on the back reflector 52 and the back passivation layer 51 by using a double-sided alignment lithography and etching process, the back electrode hole 41 and the absorption region 11a are arranged in a one-to-one correspondence, and an anode electrode 42 is formed in the back electrode hole 41 by sequentially using a thin film deposition process and a double-sided alignment lithography and etching process.
S12: a light-transmitting region 2 is formed.
Specifically, firstly, a micro-lens cushion layer 22 is deposited on the upper surface of the front reflector 72 by using a low-temperature deposition process, and the thickness of the micro-lens cushion layer 22 is equal to the angle of the micro-lens 211, so as to ensure that the incident near-infrared light enters the absorption layer 6 through the light-transmitting hole 12.
And then, photoetching a micro-lens 211 precursor pattern on the upper surface of the micro-lens cushion layer 22 by using photosensitive polyimide, and forming a micro-lens array 21 on the micro-lens 211 precursor pattern by using a hot melting method to finish the manufacture of the micro-black silicon APD photoelectric detector.
By means of the near infrared light absorption enhancement effect of the micro blackbody pixel 11, the absorption rate of the photoelectric detector to near infrared light can be greatly improved, the sensitivity (response rate) of the photoelectric detector is further improved, and the improvement of the sensitivity does not depend on the increase of the thickness of the absorption layer 6, so that the increase of the breakdown voltage temperature coefficient and the response time of the detector can not be caused; moreover, after the near-infrared light is incident to the absorption region 11a, the near-infrared light which is not absorbed can be reflected back and forth between the front reflector 72, the back reflector 52 and the side reflector 82 until the near-infrared light is completely absorbed, so that the invention can further reduce the breakdown voltage temperature coefficient of the photoelectric detector and improve the response speed of the photoelectric detector by further reducing the thickness of the absorption layer 6, thereby greatly improving the comprehensive performance of the photoelectric detector.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all equivalent structures made by using the contents of the present specification and the drawings can be directly or indirectly applied to other related technical fields, and are within the scope of the present invention.
Claims (10)
1. A micro black body silicon APD photoelectric detector comprises a detector body and is characterized in that the detector body comprises a micro black body array and a light transmission area which are sequentially arranged from bottom to top, the micro black body array comprises a plurality of micro black body pixels distributed in an array, each micro black body pixel comprises an absorption area, a front reflection area and a back reflection area which are oppositely arranged on the upper side and the lower side of the absorption area, and a side reflection area which is arranged between the front reflection area and the back reflection area and surrounds the absorption area; the front reflection area is provided with a light through hole, near infrared light is converged in the light through hole and enters the absorption area through the light through hole, and the front reflection area, the back reflection area and the side reflection area reflect back and forth to realize repeated absorption of the near infrared light by the absorption area.
2. The micro black body silicon APD photodetector of claim 1, wherein the micro black body silicon pixel further comprises an avalanche multiplication region formed at an upper portion of the absorption region, a highly doped charge layer formed at an upper surface of the avalanche multiplication region and contacting a lower surface of the front reflection region, and a guard ring surrounding an outer edge of the highly doped charge layer, a diameter of the highly doped charge layer in a horizontal projection plane is larger than a diameter of the avalanche multiplication region in the horizontal projection plane, such that the guard ring is spaced around the avalanche multiplication region; the avalanche multiplication region, the highly doped charge layer and the guard ring are all formed on the upper part of the absorption region in an injection or diffusion mode.
3. The micro-black body silicon APD photodetector of claim 2, wherein the micro-black body pixel further comprises an anode contact layer formed on the bottom of the absorption region and corresponding to the upper surface of the back reflection region, the back reflection region has a back electrode hole formed thereon, and the back electrode hole has an anode electrode connected to the anode contact layer formed therein; and a front electrode hole is formed in the front reflection region, and a cathode electrode connected with the high-doping charge layer is formed in the front electrode hole.
4. The APD photodetector of claim 1, wherein the detector body comprises a back reflection layer, an absorption layer and a front reflection layer sequentially arranged from bottom to top, the absorption layer is formed with a plurality of isolation trenches distributed in an array, the isolation trenches vertically penetrate through the absorption layer to separate the absorption layer into the absorption regions, the isolation trenches are provided with side reflection layers surrounding the absorption regions to form the side reflection regions, and the front reflection layer and the back reflection layer in the corresponding regions at the upper and lower sides of the absorption regions respectively form the front reflection region and the back reflection region of the micro black body pixel.
5. The micro-black silicon APD photodetector of claim 4, wherein the front side reflective layer comprises a front side passivation layer deposited on an upper surface of the absorption layer and a front side mirror deposited on an upper surface of the front side passivation layer; the back reflection layer comprises a back passivation layer deposited below the absorption layer and a back reflection mirror deposited on the lower surface of the back passivation layer; the side reflective layer includes side passivation layers deposited on both sidewalls of the isolation trench and a side mirror deposited between the side passivation layers on both sides.
6. The APD photodetector of claim 4, wherein the light transmissive region comprises a microlens pad layer formed on the upper surface of the front mirror and microlenses formed on the microlens pad layer in one-to-one correspondence with the micro black pixels, and the microlenses are disposed coaxially with the light transmission holes; the micro lens is a convex lens, and the thickness of the micro lens cushion layer is matched with the focal length of the convex lens.
7. The APD photodetector of claim 4, wherein the detector body further comprises a stop ring formed on the upper portion of the absorption layer, the stop ring spacer ring is disposed around the array of the micro-blacks, a front electrode groove is disposed on the front reflection layer at a position corresponding to the stop ring, and a stop ring electrode connected to the stop ring is formed in the front electrode groove.
8. The micro-black silicon APD photodetector as claimed in claim 5, wherein the front mirror and the back mirror are deposited by using one or more of metal medium, oxide medium and non-oxide medium; the side reflector is formed by depositing a metal medium or by depositing a metal medium and an oxide medium or a non-oxide medium in a combined manner.
9. The micro-black silicon APD photodetector of claim 1, wherein an anti-reflection film is formed in the light transmission hole.
10. A manufacturing method of a micro black silicon APD photoelectric detector is characterized by being used for manufacturing the micro black silicon APD photoelectric detector and comprising the following steps:
s1: using high-resistance monocrystalline silicon material as an absorption layer;
s2: injecting or diffusing on the upper surface of the absorption layer to form a stop ring;
s3: forming a plurality of protective rings distributed in an array in the area, corresponding to the inner side of the stop ring, on the upper surface of the absorption layer; implanting or diffusing the upper surface of the absorption layer into the region corresponding to the inner side of each guard ring to form an avalanche multiplication region; and injecting the upper surface of the absorption layer into a region corresponding to the inner side of the guard ring to form a highly doped charge layer with an overlapped part with the guard ring;
s4: etching an isolation trench downwards in the peripheral area of the absorption layer corresponding to each protection ring to form a plurality of absorption areas distributed in an array mode, oxidizing or depositing the surface of the isolation trench to form a side passivation layer, and depositing filling materials on the surface of the side passivation layer in the isolation trench; removing the redundant filling material on the surface of the absorption layer to form a side reflector;
s5: depositing a front passivation layer and a front reflector on the upper surface of the absorption layer in sequence;
s6: etching downwards in the areas corresponding to each high-charge-doped layer on the front reflector and the front passivation layer to form light through holes corresponding to the high-charge-doped layers one by one, and depositing an antireflection film in the light through holes;
s7: etching downwards in the regions of the front reflector and the front passivation layer corresponding to each high-charge-doped layer to form front electrode holes corresponding to the high-charge-doped layers one by one, and depositing cathode electrodes in the front electrode holes; etching downwards in the regions corresponding to the stop rings on the front reflector and the front passivation layer to form a front electrode groove, and depositing a stop ring electrode in the front electrode groove;
s8: thinning the lower surface of the absorption layer;
s9: injecting an anode contact layer on the lower surface of the absorption layer;
s10: depositing a back passivation layer on the lower surface of the anode contact layer, and depositing a back reflector on the lower surface of the back passivation layer;
s11: etching upwards in the area corresponding to each absorption area on the back reflector and the back passivation layer to form back electrode holes corresponding to the absorption areas one by one, and depositing in the back electrode holes to form an anode electrode;
s12: and depositing a micro-lens cushion layer on the upper surface of the front reflector, and forming a micro-lens array on the surface of the micro-lens cushion layer to finish the manufacture of the micro black silicon APD photoelectric detector.
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