CN117096121A - Integrated micro-turbulence column heat dissipation structure with efficient heat dissipation and low process complexity of SiC MOSFET - Google Patents
Integrated micro-turbulence column heat dissipation structure with efficient heat dissipation and low process complexity of SiC MOSFET Download PDFInfo
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- CN117096121A CN117096121A CN202311280654.XA CN202311280654A CN117096121A CN 117096121 A CN117096121 A CN 117096121A CN 202311280654 A CN202311280654 A CN 202311280654A CN 117096121 A CN117096121 A CN 117096121A
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- 230000017525 heat dissipation Effects 0.000 title claims abstract description 61
- 238000000034 method Methods 0.000 title claims abstract description 31
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 146
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 239000011889 copper foil Substances 0.000 claims abstract description 34
- 239000000110 cooling liquid Substances 0.000 claims abstract description 22
- 239000000919 ceramic Substances 0.000 claims abstract description 13
- 229910000679 solder Inorganic materials 0.000 claims abstract description 9
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 11
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000001816 cooling Methods 0.000 description 7
- 238000013461 design Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 4
- 239000002826 coolant Substances 0.000 description 3
- 239000000498 cooling water Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- -1 Silicon carbide metal oxide Chemical class 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention discloses an integrated micro-turbulence column heat dissipation structure with high-efficiency heat dissipation and low process complexity of a SiC MOSFET, which comprises a DBC substrate, a Pinfin heat radiator and a heat radiator shell, wherein the DBC substrate is arranged on the DBC substrate; the DBC substrate comprises a ceramic layer, wherein a first copper foil is arranged on the upper layer of the ceramic layer, a second copper foil is arranged on the lower layer of the ceramic layer, a plurality of micro-turbulence columns are etched on the second copper foil, and a solder layer is arranged on the lower layer of the second copper foil; the Pinfin radiator is arranged on the lower side of the DBC substrate, and a Pinfin radiator water inlet and a Pinfin radiator water outlet are arranged on the Pinfin radiator; the radiator shell is arranged on the lower side of the Pinfin radiator, and a radiator shell water inlet and a radiator shell water outlet are arranged on the radiator shell; the radiator shell water inlet is used as a cooling liquid inlet, the radiator shell water outlet is used as a cooling liquid outlet, the radiator shell water inlet is communicated with the Pinfin radiator water inlet, and the Pinfin radiator water outlet is communicated with the radiator shell water outlet.
Description
Technical Field
The invention relates to the technical field of power semiconductor packaging, in particular to an integrated micro-turbulence column heat dissipation structure with high-efficiency heat dissipation and low process complexity of a SiC MOSFET.
Background
Power semiconductor devices play a vital role in modern power electronics systems. With the increasing demand for energy conversion and efficient energy transfer, high performance, high power density, high frequency and high temperature operation of electrical devices has become particularly important. Silicon carbide metal oxide semiconductor field effect transistors (SiC MOSFETs) are receiving attention for their excellent characteristics.
However, as power devices continue to evolve, high power density and high temperature applications also present significant heat dissipation challenges. Under high power operation, the power device can generate a large amount of heat, if the heat cannot be dissipated effectively, the temperature of the device can be increased, the long-term operation under a high-temperature environment can influence the static performance of the SiC MOSFET, and meanwhile, the packaging reliability can be reduced. The traditional active heat dissipation mode mainly comprises an air cooling mode and a water cooling mode, and because the heat capacity of water is higher, the water cooling heat dissipation has advantages in the aspects of heat dissipation efficiency and temperature control compared with the air cooling heat dissipation, and particularly, the water cooling heat dissipation is more excellent in high power density and high temperature conditions.
In Pinfin water cooling heat dissipation, cooling water passes through a Pinfin radiator to be in close contact with Pinfin. The cooling water absorbs the heat generated by the device and then takes the heat away. Due to the special shape and high surface area of Pinfin, heat can be transferred to cooling water more quickly, thereby achieving an efficient heat dissipation effect. Although these approaches can solve the heat dissipation problem to some extent, there are certain limitations under high power density and high temperature conditions.
In this context, the chip microfluidic channel heat dissipation technology has been developed. The technology constructs the micro-flow channel on the surface of the chip, and guides the cooling medium to pass through the surface of the chip by utilizing the micro-flow channel so as to rapidly take away the generated heat, effectively reduce the temperature of the chip and improve the performance and the reliability of the device. While chip microfluidic channel heat dissipation techniques have many advantages, some challenges need to be considered. Integrating microchannels into chip packages adds complexity to design and manufacturing, and requires high precision processing techniques, which greatly increases manufacturing costs and is not conducive to widespread industrial use. Therefore, finding a reasonably efficient heat dissipation method with low process complexity becomes a necessary choice for the development of silicon carbide power devices.
Disclosure of Invention
The invention aims to provide an integrated micro-turbulence column heat dissipation structure with high-efficiency heat dissipation and low process complexity for a SiC MOSFET so as to overcome the defects in the prior art.
In order to achieve the above purpose, the invention adopts the following technical scheme:
an integrated micro-turbulence column heat dissipation structure with high-efficiency heat dissipation and low process complexity of a SiC MOSFET comprises a DBC substrate, a Pinfin heat radiator and a heat radiator shell;
the DBC substrate comprises a first copper foil, a second copper foil, a ceramic layer, a solder layer and a micro-disturbance flow column, wherein the first copper foil is arranged on the upper layer of the ceramic layer, the second copper foil is arranged on the lower layer of the ceramic layer, a plurality of micro-disturbance flow columns are etched at the second copper foil, and the solder layer is arranged on the lower layer of the second copper foil;
the Pinfin radiator is arranged on the lower side of the DBC substrate, and a Pinfin radiator water inlet and a Pinfin radiator water outlet are arranged on the Pinfin radiator;
the radiator shell is arranged on the lower side of the Pinfin radiator, and a radiator shell water inlet and a radiator shell water outlet are arranged on the radiator shell;
the radiator shell water inlet is used as a cooling liquid inlet, the radiator shell water outlet is used as a cooling liquid outlet, the radiator shell water inlet is communicated with the Pinfin radiator water inlet, and the Pinfin radiator water outlet is communicated with the radiator shell water outlet.
Further, a plurality of rows of perturbation flow columns are etched on the second copper foil, and two adjacent rows of perturbation flow columns are arranged in a staggered mode.
Further, the Pinfin radiator comprises a radiator body, a plurality of radiating fins are arranged at the lower part of the radiator body, and a Pinfin radiator water inlet and a Pinfin radiator water outlet which penetrate through the radiator body to the lower part are arranged at the upper part of the radiator body.
Further, the radiator body is of a flat plate structure, and the radiating fins are cylindrical.
Further, a plurality of rows of heat dissipation fins are arranged at the lower part of the flat plate structure, and two adjacent rows of heat dissipation fins are arranged in a staggered mode.
Further, the Pinfin radiator water inlet and the Pinfin radiator water outlet are both positioned on the lower side of the DBC substrate and are completely covered by the DBC substrate.
Further, the width of the Pinfin radiator water inlet is equal to that of the Pinfin radiator water outlet, the length of the Pinfin radiator water inlet is greater than that of the Pinfin radiator water outlet, and the Pinfin radiator water inlet is aligned with one end of the Pinfin radiator water outlet.
Further, the radiator shell comprises a shell body, and the radiator shell water inlet and the radiator shell water outlet are positioned on the same side wall of the shell body.
Further, a right trapezoid structure is arranged inside the shell body, a cavity is formed between the top surface and the inclined surface of the right trapezoid structure and the shell body, the water inlet of the radiator shell and the water outlet of the radiator shell are opposite to the inclined surface of the right trapezoid structure, a surrounding baffle is arranged on the inclined surface and the top surface near the water outlet of the radiator shell, and the surrounding baffle divides the cavity into a water inlet cavity and a water outlet cavity.
Further, the water inlet cavity is communicated with the radiator shell water inlet and the Pinfin radiator water inlet, and the water outlet cavity is communicated with the radiator shell water outlet and the Pinfin radiator water outlet.
Compared with the prior art, the invention has the following beneficial technical effects:
according to the invention, the micro-turbulence column is etched at the bottom of the DBC substrate, so that the contact area of the cooling liquid and the heat dissipation surface can be increased by the micro-turbulence column according to the micro-turbulence heat dissipation principle, and fine turbulence is generated in the flowing process, so that the convective heat exchange between the cooling liquid and the bottom of the DBC substrate is further increased. The design can effectively improve the heat dissipation efficiency of the radiator, so that high-power devices such as SiC MOSFET and the like can be better cooled under a high-temperature working environment, and stable performance is maintained.
The second copper foil at the bottom of the DBC substrate is etched to form the micro-turbulence column in the processing process, and the etching step of the copper foil at the bottom is not needed. Through the integrated design, the customized DBC substrate with the perturbation flow column can be directly used, the introduction of complex manufacturing process and equipment is avoided, and the manufacturing process complexity is reduced, so that the cost is reduced, the technology is easier to realize industrial production, and the technology has strong practicability and economy.
The silicon carbide aluminum material adopted by the Pinfin radiator has high thermal conductivity, and the thermal expansion coefficient of the silicon carbide aluminum material is well matched with that of the semiconductor chip and the DBC substrate, so that the occurrence of thermal fatigue failure can be effectively prevented.
According to the radiator, the right trapezoid structure is designed, so that the water inlet of the radiator shell, the water outlet of the radiator shell and the inclined plane of the right trapezoid structure are in an inverted triangle structure, and the design can enable cooling liquid to have a high flowing speed when entering the radiator, promote turbulent flow formation, and facilitate the cooling liquid to be brought to the radiating surface more quickly, so that the mixing of the cooling liquid and the radiating surface is enhanced, the cooling liquid is enabled to be contacted with the radiator more uniformly, and the radiating efficiency is improved. The coolant gradually spreads into a wider surface after passing through the inverted triangle structure, and flows into the Pinfin radiator, so that the Pinfin radiator is more fully contacted with the coolant, and the radiating effect is enhanced.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention.
Fig. 1A is an external schematic view of an integrated micro-vortex pillar heat dissipation structure according to an embodiment of the present invention.
Fig. 1B is an exploded view of an integrated micro-vortex pillar heat dissipation structure in an embodiment of the present invention.
Fig. 2A is a schematic front view of a DBC substrate according to an embodiment of the present invention.
Fig. 2B is a bottom view of a DBC substrate according to an embodiment of the present invention.
Fig. 2C is a schematic perspective view of a DBC substrate according to an embodiment of the present invention.
Fig. 3A is a schematic front view of a Pinfin radiator according to an embodiment of the present invention.
Fig. 3B is a schematic bottom view of the Pinfin radiator according to an embodiment of the invention.
Fig. 4A is a schematic view of a radiator housing according to an embodiment of the invention.
Fig. 4B is a schematic top view of a radiator housing according to an embodiment of the invention.
The device comprises a 1-DBC substrate, a 1P-perturbation flow column, a C1-first copper foil, a C2-second copper foil, a D-ceramic layer, an S-solder layer, a 2-Pinfin radiator, a 2I-Pinfin radiator water inlet, a 2O-Pinfin radiator water outlet, 2P-radiating fins, a 3-radiator shell, a 3I-radiator shell water inlet and a 3O-radiator shell water outlet.
Detailed Description
In order that those skilled in the art will better understand the present invention, a technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in which it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present invention without making any inventive effort, shall fall within the scope of the present invention.
It should be noted that the terms "first," "second," and the like in the description and the claims of the present invention and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that the embodiments of the invention described herein may be implemented in sequences other than those illustrated or otherwise described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
The integrated micro-vortex column heat dissipation structure designed by the invention mainly comprises a DBC substrate 1 with a micro-vortex column 1P etched at the bottom, a Pinfin heat radiator 2 and a heat radiator shell 3. The DBC substrate 1 is provided with a first copper foil C1 at the top and a second copper foil C2 at the bottom, and a plurality of micro-turbulence columns 1P are etched on the second copper foil C2. The Pinfin radiator 2 has a plurality of cylindrical radiating fins 2P, and has a Pinfin radiator water inlet 2I and a Pinfin radiator water outlet 2O. The radiator shell 3 is provided with a radiator shell water inlet 3I and a radiator shell water outlet 3O, and the radiator shell water inlet 3I and the radiator shell water outlet 3O are designed in an inverted triangle structure.
As a preferred embodiment, the Pinfin radiator 2 is disposed at the lower side of the DBC substrate 1, and a Pinfin radiator water inlet 2I and a Pinfin radiator water outlet 2O are disposed on the Pinfin radiator 2; the radiator shell 3 is arranged on the lower side of the Pinfin radiator 2, and a radiator shell water inlet 3I and a radiator shell water outlet 3O are arranged on the radiator shell 3; the radiator shell water inlet 3I is used as a cooling liquid inlet, the radiator shell water outlet 3O is used as a cooling liquid outlet, the radiator shell water inlet 3I is communicated with the Pinfin radiator water inlet 2I, and the Pinfin radiator water outlet 2O is communicated with the radiator shell water outlet 3O.
Referring to fig. 1A and fig. 1B, fig. 1A is an external schematic view of a heat dissipation structure of an integrated micro-vortex pillar according to the present invention; fig. 1B is an exploded view of the integrated micro-vortex pillar heatsink of fig. 1A. As shown in fig. 1B, the DBC substrate 1, pinfin radiator 2, pinfin radiator water inlet 2I, pinfin radiator water outlet 2O, radiator housing 3, radiator housing water inlet 3I, radiator housing water outlet 3O are included. When in use, the cooling liquid flows into the Pinfin radiator 2 from the radiator shell water inlet 3I, flows into the bottom of the DBC substrate 1 through the Pinfin radiator water inlet 2I, flows through the Pinfin radiator water outlet 2O and flows out from the radiator shell water outlet 3O.
Referring to fig. 2A, 2B and 2C, fig. 2A is a front view of the DBC substrate of the present invention, fig. 2B is a bottom view of the DBC substrate of fig. 2A, and fig. 2C is a perspective view of the DBC substrate. As shown, the micro-turbulence column 1P, the first copper foil C1, the second copper foil C2, the ceramic layer D, and the solder layer S are included. The first copper foil C1 is positioned above the ceramic layer D to realize the electrical connection of all parts of the chip; the second copper foil C2 is located below the ceramic layer D, a plurality of micro-turbulence columns 1P are etched at the second copper foil C2, when the cooling liquid flows through the micro-turbulence columns 1P, the liquid can generate fine turbulence between the micro-turbulence columns 1P, so that the cooling liquid can be fully contacted with the heat dissipation surface, the scheme has lower process difficulty, the temperature of the DBC substrate 1 can be effectively reduced, and the heat dissipation efficiency is improved. The solder layer S is located under the second copper foil C2 and is connected to the Pinfin heat spreader 2 using a tin-based solder.
As a preferred embodiment, the second copper foil C2 is etched with a plurality of rows of perturbation flow columns 1P, and two adjacent rows of perturbation flow columns 1P are staggered.
Referring to fig. 3A and 3B, fig. 3A is a front view of the Pinfin radiator of the present invention, and fig. 3B is a bottom view of the Pinfin radiator of fig. 3A. As shown, it includes a Pinfin radiator water inlet 2i, a Pinfin radiator water outlet 2O, and heat sink fins 2P. The cooling liquid flows in from the radiator housing water inlet 3I and passes through the radiating fins 2P, and the radiating fins 2P are columnar structures arranged in the radiator in a direction perpendicular to the flow direction, which function to increase the radiating surface area, thereby improving the radiating efficiency, and finally flows into the second copper foil C2 at the bottom of the DBC substrate 1 from the Pinfin radiator water inlet 2I. By initially etching the micro-spoiler pillars at the second copper foil C2 of the DBC substrate 1, a low process complexity micro-fluidic heat dissipation is achieved and combined with a Pinfin heat sink. Compared with the chip micro-flow channel heat dissipation technology, the invention has obvious breakthrough in the aspects of simplifying the process and reducing the heat dissipation cost. Chip microfluidic channel heat dissipation techniques typically involve complex liquid cooling systems and precision manufacturing processes, which can result in high manufacturing and maintenance costs. The micro-turbulence column is etched in the DBC manufacturing process, expensive manufacturing equipment and precise processing technology are not needed, the manufacturing complexity of the micro-flow radiator is reduced, and the design of the radiator is optimized, so that the low-cost and high-efficiency heat radiation performance is realized.
As a preferred embodiment, the Pinfin radiator 2 includes a radiator body, a plurality of radiating fins 2P are disposed at a lower portion of the radiator body, a Pinfin radiator water inlet 2I and a Pinfin radiator water outlet 2O penetrating through the radiator body to the lower portion are disposed at an upper portion of the radiator body, the radiator body is of a flat plate structure, the radiating fins 2P are cylindrical, a plurality of rows of radiating fins 2P are disposed at a lower portion of the flat plate structure, two adjacent rows of radiating fins 2P are staggered, the Pinfin radiator water inlet 2I and the Pinfin radiator water outlet 2O are disposed at a lower side of the DBC substrate 1 and are completely covered by the DBC substrate 1, the Pinfin radiator water inlet 2I and the Pinfin radiator water outlet 2O are equal in width, and the length of the Pinfin radiator water inlet 2I is greater than that of the Pinfin radiator water outlet 2O and the Pinfin radiator water inlet 2I is aligned with one end of the Pinfin radiator water outlet 2O.
Referring to fig. 4A and fig. 4B, fig. 4A is a schematic diagram of a radiator housing according to the present invention, and fig. 4B is a schematic top view of the radiator housing in fig. 4A. As shown, the radiator comprises a radiator housing water inlet 3I, a radiator housing water outlet 3O, and an inverted triangle structure at the radiator housing water inlet 3I and the radiator housing water outlet 3O. The radiator housing water inlet 3I and the radiator housing water outlet 3O are separated from each other, and external cooling liquid flows into the radiator from the radiator housing water inlet 3I and flows out from the radiator water outlet 3O after the radiating process. The inverted triangle structure design can enable the cooling liquid to have a faster flowing speed when entering the radiator, meanwhile, the flowing instability can be caused, and the turbulent flow is promoted, so that the mixing of the cooling liquid and the radiating surface is enhanced, the cooling liquid is enabled to be in contact with the radiator more uniformly, and the heat convection efficiency is further improved.
As a preferred embodiment, the radiator housing 3 includes a housing body, the radiator housing water inlet 3I and the radiator housing water outlet 3O are located on the same side wall of the housing body, a right trapezoid structure is arranged inside the housing body, a cavity is formed between the top surface and the inclined surface of the right trapezoid structure and the housing body, the radiator housing water inlet 3I and the radiator housing water outlet 3O are opposite to the inclined surface of the right trapezoid structure, the inclined surface and the top surface near the radiator housing water outlet 3O are provided with a surrounding baffle, the surrounding baffle divides the cavity into a water inlet cavity and a water outlet cavity, the water inlet cavity is communicated with the radiator housing water inlet 3I and the Pinfin radiator water inlet 2I, and the water outlet cavity is communicated with the radiator housing water outlet 3O and the Pinfin radiator water outlet 2O, and an inverted triangle structure is formed between the radiator housing water inlet and the radiator housing water outlet and the inclined surface of the right trapezoid structure.
Finally, it should be noted that: the above embodiments are merely preferred embodiments of the present invention for illustrating the technical solution of the present invention, but not limiting the scope of the present invention; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the corresponding technical solutions; that is, even though the main design concept and spirit of the present invention is modified or finished in an insubstantial manner, the technical problem solved by the present invention is still consistent with the present invention, and all the technical problems are included in the protection scope of the present invention; in addition, the technical scheme of the invention is directly or indirectly applied to other related technical fields, and the technical scheme is included in the scope of the invention.
Claims (10)
1. The integrated micro-turbulence column heat dissipation structure with high efficiency and low process complexity for the SiC MOSFET is characterized by comprising a DBC substrate (1), a Pinfin heat radiator (2) and a heat radiator shell (3);
the DBC substrate (1) comprises a first copper foil (C1), a second copper foil (C2), a ceramic layer (D), a solder layer (S) and a micro-disturbance flow column (1P), wherein the first copper foil (C1) is arranged on the upper layer of the ceramic layer (D), the second copper foil (C2) is arranged on the lower layer of the ceramic layer (D), a plurality of micro-disturbance flow columns (1P) are etched at the second copper foil (C2), and the solder layer (S) is arranged on the lower layer of the second copper foil (C2);
the Pinfin radiator (2) is arranged on the lower side of the DBC substrate (1), and a Pinfin radiator water inlet (2I) and a Pinfin radiator water outlet (2O) are arranged on the Pinfin radiator (2);
the radiator shell (3) is arranged at the lower side of the Pinfin radiator (2), and a radiator shell water inlet (3I) and a radiator shell water outlet (3O) are arranged on the radiator shell (3);
the radiator comprises a radiator shell water inlet (3I) serving as a cooling liquid inlet, a radiator shell water outlet (3O) serving as a cooling liquid outlet, and a Pinfin radiator water inlet (2I) and a Pinfin radiator water outlet (2O) which are communicated.
2. The integrated micro-turbulence column heat dissipation structure with high-efficiency heat dissipation and low process complexity of the SiC MOSFET according to claim 1, wherein a plurality of rows of micro-turbulence columns (1P) are etched on the second copper foil (C2), and two adjacent rows of micro-turbulence columns (1P) are staggered.
3. The SiC MOSFET integrated micro-turbulent flow column heat dissipation structure with high efficiency heat dissipation and low process complexity according to claim 1, wherein the Pinfin heat sink (2) comprises a heat sink body, a plurality of heat dissipation fins (2P) are arranged at the lower part of the heat sink body, and a Pinfin heat sink water inlet (2I) and a Pinfin heat sink water outlet (2O) penetrating to the lower part are arranged at the upper part of the heat sink body.
4. A SiC MOSFET high-efficiency heat dissipation low-process complexity integrated micro-turbulence pillar heat dissipation structure according to claim 3, wherein the heat sink body is a flat plate structure, and the heat dissipation fins (2P) are cylindrical.
5. The integrated micro-turbulence column heat dissipation structure with high efficiency heat dissipation and low process complexity for a SiC MOSFET according to claim 4, wherein a plurality of rows of heat dissipation fins (2P) are disposed at the lower portion of the flat plate structure, and two adjacent rows of heat dissipation fins (2P) are disposed in a staggered manner.
6. A SiC MOSFET high efficiency heat dissipation low process complexity integrated micro-vortex pillar heat dissipation structure according to claim 3, characterized in that the Pinfin heat sink water inlet (2I) and Pinfin heat sink water outlet (2O) are both located at the underside of the DBC substrate (1) and are completely covered by the DBC substrate (1).
7. A SiC MOSFET high efficiency heat dissipation low process complexity integrated micro-turbulence pillar heat dissipation structure according to claim 3, characterized in that the Pinfin heat sink water inlet (2I) is equal to the Pinfin heat sink water outlet (2O) in width, the Pinfin heat sink water inlet (2I) is longer than the Pinfin heat sink water outlet (2O), and the Pinfin heat sink water inlet (2I) is aligned with one end of the Pinfin heat sink water outlet (2O).
8. The integrated micro-turbulence column heat dissipation structure with high efficiency and low process complexity for SiC MOSFETs according to claim 1, wherein the heat sink housing (3) includes a housing body, and the heat sink housing water inlet (3I) and the heat sink housing water outlet (3O) are located on the same side wall of the housing body.
9. The integrated micro-turbulent flow column heat dissipation structure with high-efficiency heat dissipation and low process complexity of the SiC MOSFET according to claim 1, wherein a right trapezoid structure is arranged inside the shell body, a cavity is formed between the top surface and the inclined surface of the right trapezoid structure and the shell body, a radiator shell water inlet (3I) and a radiator shell water outlet (3O) are opposite to the inclined surface of the right trapezoid structure, and a surrounding baffle is arranged on the inclined surface and the top surface near the radiator shell water outlet (3O) and divides the cavity into a water inlet cavity and a water outlet cavity.
10. The SiC MOSFET high efficiency heat dissipation low process complexity integrated micro-vortex pillar heat dissipation structure of claim 9, wherein the water inlet cavity is in communication with a radiator housing water inlet (3I) and a Pinfin radiator water inlet (2I), and the water outlet cavity is in communication with a radiator housing water outlet (3O) and a Pinfin radiator water outlet (2O).
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311280654.XA CN117096121A (en) | 2023-09-28 | 2023-09-28 | Integrated micro-turbulence column heat dissipation structure with efficient heat dissipation and low process complexity of SiC MOSFET |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311280654.XA CN117096121A (en) | 2023-09-28 | 2023-09-28 | Integrated micro-turbulence column heat dissipation structure with efficient heat dissipation and low process complexity of SiC MOSFET |
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| CN (1) | CN117096121A (en) |
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2023
- 2023-09-28 CN CN202311280654.XA patent/CN117096121A/en active Pending
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