CN117096012B - Oxide film, silicon wafer and preparation method thereof - Google Patents
Oxide film, silicon wafer and preparation method thereof Download PDFInfo
- Publication number
- CN117096012B CN117096012B CN202311068106.0A CN202311068106A CN117096012B CN 117096012 B CN117096012 B CN 117096012B CN 202311068106 A CN202311068106 A CN 202311068106A CN 117096012 B CN117096012 B CN 117096012B
- Authority
- CN
- China
- Prior art keywords
- oxide film
- temperature
- thermal oxidation
- oxidation treatment
- following conditions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 20
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 20
- 239000010703 silicon Substances 0.000 title claims abstract description 20
- 230000003647 oxidation Effects 0.000 claims abstract description 58
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 58
- 238000000034 method Methods 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 238000010438 heat treatment Methods 0.000 claims description 26
- 230000001590 oxidative effect Effects 0.000 claims description 11
- 239000012298 atmosphere Substances 0.000 claims description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims 11
- 239000007789 gas Substances 0.000 claims 1
- 230000000630 rising effect Effects 0.000 abstract description 3
- 238000012360 testing method Methods 0.000 description 9
- 239000000203 mixture Substances 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
Abstract
The application discloses an oxide film, a silicon wafer and a preparation method thereof. The preparation method of the oxide film comprises the following steps: performing first thermal oxidation treatment on the surface of the substrate to obtain a first oxide film; temperature T of first thermal oxidation treatment 1 900-1000 ℃, and the time of the first thermal oxidation treatment is t 2 The method comprises the steps of carrying out a first treatment on the surface of the Performing a second thermal oxidation treatment on the surface of the first oxide film to obtain a second oxide film; temperature T of the second thermal oxidation treatment 2 1000-1100 ℃, and the time of the second thermal oxidation treatment is t 4 . The silicon wafer with the film thickness uniformity less than or equal to 0.5% is prepared on the substrate by controlling the time and the temperature of the temperature rising treatment.
Description
Technical Field
The application belongs to the technical field of semiconductors, and particularly relates to an oxide film, a silicon wafer and a preparation method thereof.
Background
In the prior art, the oxidation process comprises the following steps: placing the silicon wafer in a constant temperature area, and heating the silicon wafer to an oxidation temperature at a certain heating rate>1000℃) At H 2 /O 2 High temperature thermal oxidation for a long time in a mixed atmosphere to obtain an oxide layer (L) 0 ) But generally have poor uniformity (> 0.5%) and convex microstructures.
Disclosure of Invention
The purpose of the application is to provide an oxide film, a silicon wafer and a preparation method thereof, wherein the technical problems can be solved by controlling the time and the temperature of heating treatment.
The embodiment of the application provides a preparation method of an oxide film, which comprises the following steps:
placing the substrate in a constant temperature area, heating for the first time at a first heating rate v 1 The duration of the first temperature rise is t 1 ；
After the first temperature rise is finished, performing first thermal oxidation treatment on the surface of the substrate to obtain a first oxide film; temperature T of the first thermal oxidation treatment 1 900-1000 ℃, and the time of the first thermal oxidation treatment is t 2 ；
After the first thermal oxidation treatment is finished, the temperature is raised for the second time, and the second temperature raising rate is v 2 The duration of the second heating is t 3 ；
After the second heating is finished, performing a second thermal oxidation treatment on the surface of the first oxide film to obtain a second oxide film; temperature T of the second thermal oxidation treatment 2 1000-1100 ℃, wherein the second thermal oxidation treatment time is t 4 ；
After the second thermal oxidation treatment is finished, the temperature is reduced at a rate v 3 Cooling to a constant temperature area;
wherein t is less than or equal to 50min 1 ≤ 100min，20min ≤ t 4 <t 2 ≤ 540min，80min ≤ t 3 ≤ 150min；
The first temperature rise rate v 1 The method meets the following conditions: v 1 =；
The second temperature rise rate v 2 The method meets the following conditions: v 2 =；
The temperature of the constant temperature area is 650-750 ℃;
the first oxide film is provided with a first surface and a second surface which is arranged away from the first surface, and the second surface is recessed towards the first surface;
the second oxide film is provided with a third surface and a fourth surface which is arranged away from the third surface, and the third surface is matched with the second surface.
In some embodiments, the first thermal oxidation treatment time t 2 And the second thermal oxidation treatment time t 4 The method meets the following conditions: 0min<t 2 -t 4 ≤ 40min。
In some embodiments, the temperature T of the first thermal oxidation treatment 1 And the temperature T of the second thermal oxidation treatment 2 The method meets the following conditions: t at 80℃ or less 2 -T 1 ≤ 150℃。
In some embodiments, the first ramp rate v 1 And the second temperature rise rate v 2 The method meets the following conditions: 2v 2 ≤ v 1 ≤ 4v 2 。
In some embodiments, the first ramp rate v 1 The method meets the following conditions: 2 ℃/min is less than or equal to v 1 ≤5℃/min。
In some embodiments, the second ramp rate v 2 The method meets the following conditions: v is less than or equal to 0.5 ℃/min 2 ≤1.8℃/min。
In some embodiments, the cooling rate v 3 The method meets the following conditions: v is less than or equal to 1 ℃/min 3 ≤2℃/min。
In some embodiments, the preparation of the oxide film is performed in an oxidizing atmosphere, which includes 1% -5% oxygen.
In some embodiments, the oxidizing atmosphere is a mixture of oxygen and nitrogen.
Accordingly, the present application provides an oxide film, which is prepared by the preparation method as described above, and includes a first oxide film and a second oxide film;
the first oxide film is provided with a first surface and a second surface which is arranged away from the first surface, and the second surface is recessed towards the first surface;
the second oxide film is provided with a third surface and a fourth surface which is arranged away from the third surface, and the third surface is matched with the second surface.
In some embodiments, the oxide film has a film thickness uniformity of 0.5% or less.
In some embodiments, the second surface recess has a depth of 0.5% -0.8% of the thickness of the first oxide film.
In some embodiments, the height of the third surface protrusion is 0.5% -0.8% of the thickness of the second oxide film.
Correspondingly, the application provides a silicon wafer which comprises the oxide film prepared by the preparation method or comprises the oxide film; the oxide film is positioned on the surface of the substrate.
The beneficial effects of this application lie in: compared with the prior art, the application provides an oxide film, a silicon wafer and a preparation method thereof. The preparation method of the oxide film comprises the following steps: placing the substrate in a constant temperature area, heating for the first time at a first heating rate v 1 The duration of the first temperature rise is t 1 The method comprises the steps of carrying out a first treatment on the surface of the After the first temperature rise is finished, performing first thermal oxidation treatment on the surface of the substrate to obtain a first oxide film; temperature T of first thermal oxidation treatment 1 900-1000 ℃, and the time of the first thermal oxidation treatment is t 2 The method comprises the steps of carrying out a first treatment on the surface of the After the first thermal oxidation treatment is finished, the temperature is raised for the second time, and the second temperature raising rate is v 2 The duration of the second heating is t 3 The method comprises the steps of carrying out a first treatment on the surface of the After the second heating is finished, performing a second thermal oxidation treatment on the surface of the first oxide film to obtain a second oxide film; temperature T of the second thermal oxidation treatment 2 1000-1100 ℃, and the second thermal oxidation treatment time is t 4 The method comprises the steps of carrying out a first treatment on the surface of the After the second thermal oxidation treatment is finished, the temperature is reduced at a rate v 3 Cooling to a constant temperature area; wherein t is less than or equal to 50min 1 ≤ 100min，20min ≤ t 4 <t 2 ≤ 540min，80min ≤ t 3 Less than or equal to 150min. The silicon wafer with the film thickness uniformity less than or equal to 0.5% is prepared on the substrate by controlling the time and the temperature of the temperature rising treatment.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the description of the embodiments will be briefly introduced below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a prior art oxide film preparation flow;
FIG. 2 is a schematic view of the microstructure of an oxide film prepared in the prior art;
FIG. 3 is a prior art oxide film preparation process;
FIG. 4 is a prior art oxide film morphology;
FIG. 5 is a schematic diagram of measurement points for film thickness uniformity testing;
FIG. 6 is a numerical example of a film thickness uniformity test;
FIG. 7 is a schematic view of the structure of the oxide film of the present application;
FIG. 8 is a schematic view of the microstructure of the first oxide film of the present application;
FIG. 9 is a schematic view of the microstructure of the second oxide film of the present application;
FIG. 10 is a flow chart of oxide film preparation in accordance with the present application;
FIG. 11 is an example of an oxide film preparation process of the present application;
FIG. 12 shows the results of the uniformity test of the film thickness of the oxide film prepared in example 3 of the present application.
Detailed Description
The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all, of the embodiments of the present application. All other embodiments, which can be made by those skilled in the art based on the embodiments herein without making any inventive effort, are intended to be within the scope of the present application. In addition, in the description of the present application, the term "comprising" means "including but not limited to". The terms first, second, third and the like are used merely as labels, and do not impose numerical requirements or on the order of construction. Various embodiments of the present application may exist in a range of forms; it should be understood that the description in a range format is merely for convenience and brevity and should not be construed as a rigid limitation on the scope of the application; it is therefore to be understood that the range description has specifically disclosed all possible sub-ranges and individual values within that range. For example, it should be considered that a description of a range from 1 to 6 has specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the ranges, such as 1, 2, 3, 4, 5, and 6, wherever applicable. In addition, whenever a numerical range is referred to herein, it is meant to include any reference number (fractional or integer) within the indicated range.
As shown in fig. 1, the preparation of the oxide film on the silicon wafer comprises the following steps: placing the silicon wafer in a constant temperature area, and preparing an oxide layer by using the control parameters shown in figure 3, specifically heating to an oxidation temperature at a certain heating rate>1000 ℃ C., at H 2 /O 2 The oxide layer L0 is obtained on the surface of the silicon wafer by high-temperature thermal oxidation in the mixed atmosphere, but the uniformity of the oxide layer prepared in the prior art is poor (the film thickness uniformity is more than 0.5%), and the microstructure of the prepared oxide layer L0 is convex as shown in fig. 2 and 4 to 6.
As shown in fig. 7 to 12, in order to solve the problems of the prior art, an embodiment of the present application provides a method for preparing an oxide film, including the steps of:
placing the substrate 1 in a constant temperature area, heating for the first time at a first heating rate v 1 At a temperature of c/min, the first heating duration is t 1 min；
After the first temperature rise is finished, performing first thermal oxidation treatment on the surface of the substrate 1 to obtain a first oxide film 11; temperature T of first thermal oxidation treatment 1 900-1000 ℃, first hot oxygenThe chemical treatment time is t 2 min；
After the first thermal oxidation treatment is finished, the temperature is raised for the second time, and the second temperature raising rate is v 2 At a temperature of about t DEG C/min for a second time 3 min；
After the second temperature rise is finished, performing a second thermal oxidation treatment on the surface of the first oxide film 11 to obtain a second oxide film 12; temperature T of the second thermal oxidation treatment 2 1000-1100 ℃, and the second thermal oxidation treatment time is t 4 min；
After the second thermal oxidation treatment is finished, the temperature is reduced at a rate v 3 Cooling to a constant temperature area at the temperature of C/min;
wherein, t is more than or equal to 50 1 ≤ 100，20 ≤ t 4 <t 2 ≤ 540，80 ≤ t 3 ≤ 150。
The preparation method comprises the steps of heating and oxidizing step by step, oxidizing the first heated first oxidized film 11 to obtain a first oxidized film 11, wherein the first oxidized film 11 is of a micro-concave structure, combining the second oxidized film 12 obtained by the second thermal oxidation treatment to obtain a second oxidized film 12 of a micro-convex structure, and matching the first oxidized film 11 with the second oxidized film 12 to obtain an oxidized film 10, wherein the uniformity of the film thickness of the prepared oxidized film 10 is less than or equal to 0.5%.
In some embodiments, the recess depth h of the first oxide film 11 is calculated on the thickness of the first oxide film 11 1 Thickness H of first oxide film 11 1 0.5% -0.8%.
In some embodiments, the first oxide film 11 satisfies: h is a 1 / H 1 *100% = 0.5-0.8%, wherein h 1 Is the recess depth of the first oxide film 11, and is expressed as A, H 1 The unit of the thickness of the first oxide film 11 is a.
Recess depth h of the first oxide film 11 1 / H 1 *100% is any value or any two value ranges of 0.5%, 0.55%, 0.60%, 0.65%, 0.70%, 0.75% and 0.80%.
In some embodiments, the protrusion height h of the second oxide film 12 is calculated based on the thickness of the second oxide film 12 2 Thickness H of second oxide film 12 2 0.5% -0.8%.
In one placeIn some embodiments, the second oxide film 12 satisfies: h is a 2 / H 2 *100% = 0.5-0.8%, wherein h 2 The unit of the height of the protrusion of the second oxide film 12 is A, H 2 The second oxide film 12 has a thickness in a unit of a.
E.g. h 2 / H 2 *100% is any value or any two value ranges of 0.5%, 0.55%, 0.60%, 0.65%, 0.70%, 0.75% and 0.80%.
In some embodiments, h 1 =h 2 。
When h of the present application 1 H 2 The uniformity of the oxide film can be controlled well by controlling the thickness within this range.
In some embodiments, the thickness of the first oxide film 11 is 1000 to 10000 a, or the thickness of the first oxide film 11 is 2000 to 5000 a. The thickness (a) of the first oxide film 11 is, for example, any one value or a range of any two values of 2000, 2500, 3000, 3500, 4000, 4500, 5000.
In some embodiments, the thickness H of the second oxide film 12 2 1000 to 10000A, or the thickness of the second oxide film 12 is 2000 to 5000A. Thickness H of the second oxide film 12 2 The (a) is any value or any two value ranges of 2000, 2500, 3000, 3500, 4000, 4500 and 5000.
In the present application, t 1 And t 2 The time is selected to control the film thickness uniformity of the first oxide film 11, t 3 And t 4 The time is selected to control the film thickness uniformity of the second oxide film 12. Finally, the control of the film thickness uniformity can be better realized. Further, the film thickness uniformity of the prepared oxide film is less than or equal to 0.5% through matching of the process time, the process temperature, the temperature rise and fall speed and the film thickness uniformity of each stage.
In some embodiments, film thickness uniformity (%) = (Max-Min)/Avg is 100%, max is the maximum value of oxide film thickness, min is the minimum value of oxide film thickness, avg is the average value of oxide film thickness.
In some embodiments, T 1 The values of the temperature (DEG C) are 900, 910, 920, 930, 940 and 950Any value or range of values in any two values, 960, 970, 980, 990, 1000.
In some embodiments, T 2 The value of (DEG C) is any value or a range of any two values of 1000, 1010, 1020, 1030, 1040, 1050, 1060, 1070, 1080, 1090 and 1100.
In some embodiments, t 1 The value of (min) is any value or any range of two values of 50, 60, 70, 80, 90 and 100.
In some embodiments, t 2 The value of (min) is any value or a range consisting of any two values of 20, 50, 100, 150, 200, 250, 300, 350, 400, 450, 500 and 540.
In some embodiments, t 3 The value of (min) is any value or a range consisting of any two values of 80, 90, 100, 110, 120, 130, 140 and 150.
In some embodiments, t 4 The value of (min) is any value or a range consisting of any two values of 20, 50, 100, 150, 200, 250, 300, 350, 400, 450, 500 and 540.
In some embodiments, the oxide film thickness test method is: an ellipsometer is used for testing, and in a specific test, an oxide film thickness of 5000 a is taken as an example: and taking 49 points uniformly distributed on the surface of the silicon wafer to test the oxide film thickness of each point, and taking the average value of the test data as the oxide film thickness.
In other specific tests, taking 10000 a as an example, as shown in fig. 3 and 4, 17 points on the surface of the silicon wafer are uniformly distributed along the diameter, the oxide film thickness of each point is tested, and the average value of the test data is the oxide film thickness.
In some embodiments, the first thermal oxidation treatment time t 2 And a second thermal oxidation treatment time t 4 The method meets the following conditions: 0<t 2 -t 4 ≤ 40。
In some embodiments, t 2 -t 4 The value of (2) is any one value or a range consisting of any two values of 1, 5, 10, 15, 20, 25, 30, 35 and 40.
In some embodiments, the temperature T of the first thermal oxidation treatment 1 And the temperature T of the second thermal oxidation treatment 2 The method meets the following conditions: 80. t is less than or equal to 2 -T 1 ≤ 150。
In some embodiments, T 2 -T 1 Is any value or a range of any two values of 80, 85, 90, 95, 100, 105, 110, 115, 120, 125, 130, 135, 140, 145, 150.
In some embodiments, a first ramp rate v 1 The method meets the following conditions: v 1 =。
In some embodiments, the second ramp rate v 2 The method meets the following conditions: v 2 =。
In some embodiments, 2v 2 ≤ v 1 ≤ 4v 2 For example v 1 Is 2v 2 、3v 2 、4v 2 Any value or a range of any two values.
In some embodiments, a first ramp rate v 1 The method meets the following conditions: 2 ℃/min is less than or equal to v 1 Less than or equal to 5 ℃/min, e.g. v 1 (. Degree.C/min) is any one or two of values 2, 2.5, 3.0, 3.5, 4.0, 4.5 and 5.0.
In some embodiments, the second ramp rate v 2 The method meets the following conditions: v is less than or equal to 0.3 ℃/min 2 Less than or equal to 1.8 ℃/min, e.g. v 2 (. Degree.C/min) is any one or two of 0.3, 0.5, 0.7, 0.8, 1.0, 1.2, 1.4, 1.6 and 1.8.
In some embodiments, the cool down rate v 3 The method meets the following conditions: v is less than or equal to 1 ℃/min 3 Less than or equal to 2 ℃/min, e.g. v 3 (. Degree.C/min) is any value or a range of any two values of 1.0, 1.1, 1.2, 1.3, 1.4, 1.5, 1.6, 1.7, 1.8, 1.9 and 2.0.
In some embodiments, the temperature (DEG C) of the constant temperature zone is 650℃ to 750 deg.
In some embodiments, the temperature (c) of the constant temperature zone is any value or range of values of any two of 650, 660, 670, 680, 690, 700, 710, 720, 730, 740, 750.
In some embodiments, the preparation of the oxide film 10 is performed in an oxidizing atmosphere comprising 1% -5% oxygen, e.g., the volume ratio (%, v/v) of oxygen in the oxidizing atmosphere is: any value or range of values of 1.0, 2.0, 3.0, 4.0, 5.0.
In some embodiments, the oxidizing atmosphere is a mixture of oxygen and nitrogen.
In some embodiments, the application further provides an oxide film 10, where the oxide film 10 includes a first oxide film 11 and a second oxide film 12, the first oxide film 11 has a first surface 111 and a second surface 112 opposite to the first surface 111, and the second surface 112 is recessed toward the first surface 111; the second oxide film 12 has a third surface 121 and a fourth surface 122 disposed opposite to the third surface 121, and the third surface 121 is matched with the second surface 112.
In some embodiments, the oxide film 10 has a film thickness uniformity of 0.5%. For example, the thickness uniformity (%) of the oxide film 10 may be any one of 0.1, 0.15, 0.20, 0.25, 0.30, 0.35, 0.40, 0.45, and 0.5 or a range of any two values.
In some embodiments, the present application also provides a silicon wafer comprising a substrate 1 and an oxide film 10 prepared on the surface of the substrate 1.
Example 1
Heating for the first time: placing the silicon wafer in a constant temperature area, wherein the temperature of the constant temperature area is 700 ℃, and heating for the first time, and the first heating rate is v 1 Temperature rise time is t at a temperature of C/min 1 。
First thermal oxidation treatment: t in a nitrogen atmosphere with an oxygen content of 2% 1 C, treating t 2 min, oxidation to obtain the first oxide film 11.
And (3) heating for the second time: the second temperature rising rate is v 2 At a temperature of about DEG C/min, riseThe temperature time is t 3 min。
And (3) performing a second thermal oxidation treatment: t in a nitrogen atmosphere with an oxygen content of 2% 2 C, treating t 4 min, oxidizing to obtain the second oxide film 12.
And (3) cooling treatment: the temperature was lowered to the constant temperature zone at 2℃per minute, and the specific parameters prepared in example 1 are shown in Table 1.
Examples 2 to 13: the preparation method is the same as in example 1, except that parameters are adjusted to prepare an oxide film on a substrate, and specific parameters are shown in table 1.
Comparative examples 1 to 9: the preparation method is the same as in example 1, except that the preparation process parameters are adjusted, and specific parameters are shown in table 1.
TABLE 1
Analysis of results: as can be seen from the data in Table 1, the film thickness uniformity of the oxide film prepared by the present application was 0.5% or less by parameter control.
In the foregoing embodiments, the descriptions of the embodiments are emphasized, and for parts of one embodiment that are not described in detail, reference may be made to related descriptions of other embodiments.
The foregoing describes in detail an oxide film, a silicon wafer and a preparation method thereof provided in the embodiments of the present application, and specific examples are applied herein to illustrate the principles and embodiments of the present application, and the description of the foregoing examples is only for helping to understand the methods and core ideas of the present application; meanwhile, those skilled in the art will have variations in the specific embodiments and application scope in light of the ideas of the present application, and the present description should not be construed as limiting the present application in view of the above.
Claims (14)
1. The preparation method of the oxide film is characterized by comprising the following steps of:
placing the substrate (1) in a constant temperature area, and heating for the first time at a first heating rate v 1 First timeThe heating duration is t 1 ；
After the first temperature rise is finished, performing first thermal oxidation treatment on the surface of the substrate (1) to obtain a first oxide film (11); temperature T of the first thermal oxidation treatment 1 900-1000 ℃, and the time of the first thermal oxidation treatment is t 2 ；
After the first thermal oxidation treatment is finished, the temperature is raised for the second time, and the second temperature raising rate is v 2 The duration of the second heating is t 3 ；
After the second heating is finished, performing a second thermal oxidation treatment on the surface of the first oxide film (11) to obtain a second oxide film (12); temperature T of the second thermal oxidation treatment 2 1000-1100 ℃, wherein the second thermal oxidation treatment time is t 4 ；
After the second thermal oxidation treatment is finished, the temperature is reduced at a rate v 3 Cooling to a constant temperature area;
wherein t is less than or equal to 50min 1 ≤ 100min，20min ≤ t 4 < t 2 ≤ 540min，80min ≤ t 3 ≤ 150min；
The first temperature rise rate v 1 The method meets the following conditions: v 1 =；
The second temperature rise rate v 2 The method meets the following conditions: v 2 =；
The temperature of the constant temperature area is 650-750 ℃;
the first oxide film (11) has a first surface (111) and a second surface (112) disposed opposite to the first surface (111), the second surface (112) being recessed toward the first surface (111);
the second oxide film (12) has a third surface (121) and a fourth surface (122) disposed opposite the third surface (121), the third surface (121) being adapted to the second surface (112).
2. The method for producing an oxide film according to claim 1, wherein the first thermal oxidation treatment time t 2 And the second thermal oxidation treatment time t 4 The method meets the following conditions: 0min< t 2 -t 4 ≤ 40min。
3. The method for producing an oxide film according to claim 1, wherein the temperature T of the first thermal oxidation treatment 1 And the temperature T of the second thermal oxidation treatment 2 The method meets the following conditions: t at 80℃ or less 2 -T 1 ≤ 150℃。
4. The method for producing an oxide film according to claim 1, wherein the first temperature rise rate v 1 And the second temperature rise rate v 2 The method meets the following conditions: 2v 2 ≤ v 1 ≤ 4v 2 。
5. The method for producing an oxide film according to claim 1, wherein the first temperature rise rate v 1 The method meets the following conditions: 2 ℃/min is less than or equal to v 1 ≤5℃/min。
6. The method for producing an oxide film according to claim 1, wherein the second temperature rise rate v 2 The method meets the following conditions: v is less than or equal to 0.5 ℃/min 2 ≤1.8℃/min。
7. The method for producing an oxide film according to claim 1, wherein the temperature decrease rate v 3 The method meets the following conditions: v is less than or equal to 1 ℃/min 3 ≤2℃/min。
8. The method for producing an oxide film according to claim 1, wherein the production of the oxide film (10) is performed in an oxidizing atmosphere, the oxidizing atmosphere including 1% -5% oxygen.
9. The method for producing an oxide film according to claim 8, wherein the oxidizing atmosphere is a mixed gas of oxygen and nitrogen.
10. An oxide film characterized in that an oxide film (10) is produced by the production method according to any one of claims 1 to 9, the oxide film (10) comprising a first oxide film (11) and a second oxide film (12);
the first oxide film (11) has a first surface (111) and a second surface (112) disposed opposite to the first surface (111), the second surface (112) being recessed toward the first surface (111);
the second oxide film (12) has a third surface (121) and a fourth surface (122) disposed opposite the third surface (121), the third surface (121) being adapted to the second surface (112).
11. The oxide film according to claim 10, wherein the film thickness uniformity of the oxide film (10) is 0.5% or less.
12. An oxide film according to claim 10, wherein the depth of the recess in the second surface (112) is 0.5% -0.8% of the thickness of the first oxide film (11).
13. The oxide film according to claim 10, wherein the height of the protrusions of the third surface (121) is 0.5% -0.8% of the thickness of the second oxide film (12).
14. A silicon wafer comprising the oxide film (10) produced by the production method according to any one of claims 1 to 9, or comprising the oxide film (10) according to any one of claims 10 to 13; the oxide film (10) is located on the surface of the substrate (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311068106.0A CN117096012B (en) | 2023-08-22 | 2023-08-22 | Oxide film, silicon wafer and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311068106.0A CN117096012B (en) | 2023-08-22 | 2023-08-22 | Oxide film, silicon wafer and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN117096012A CN117096012A (en) | 2023-11-21 |
| CN117096012B true CN117096012B (en) | 2024-03-26 |
Family
ID=88778054
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311068106.0A Active CN117096012B (en) | 2023-08-22 | 2023-08-22 | Oxide film, silicon wafer and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117096012B (en) |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08255905A (en) * | 1995-03-17 | 1996-10-01 | Nec Corp | Fabrication of semiconductor device |
| KR19990060851A (en) * | 1997-12-31 | 1999-07-26 | 김영환 | Field oxide film formation method of a semiconductor device |
| US6455382B1 (en) * | 2001-05-03 | 2002-09-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multi-step method for forming sacrificial silicon oxide layer |
| JP2003151977A (en) * | 2001-11-13 | 2003-05-23 | Mitsubishi Electric Corp | Method for manufacturing semiconductor device and apparatus for forming thin film |
| CN1462463A (en) * | 2001-04-24 | 2003-12-17 | 松下电工株式会社 | Field emission electron source and production method thereof |
| CN103262222A (en) * | 2010-11-10 | 2013-08-21 | 信越半导体股份有限公司 | Method for forming thermal oxide film of monocrystalline silicon wafer |
| CN104701155A (en) * | 2013-12-09 | 2015-06-10 | 中芯国际集成电路制造(上海)有限公司 | Gate oxide layer manufacturing method |
| CN106158583A (en) * | 2015-04-01 | 2016-11-23 | 北大方正集团有限公司 | A kind of silicon wafer forms the method for sacrificial oxide layer |
| CN108766887A (en) * | 2018-05-25 | 2018-11-06 | 中国科学院微电子研究所 | The manufacturing method of groove MOSFET element based on two step microwave plasma oxidations |
| CN112447497A (en) * | 2019-08-28 | 2021-03-05 | 长鑫存储技术有限公司 | Oxide layer forming method, semiconductor device manufacturing method and semiconductor device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013143407A (en) * | 2012-01-06 | 2013-07-22 | Shin Etsu Handotai Co Ltd | Method of manufacturing laminated soi wafer |
-
2023
- 2023-08-22 CN CN202311068106.0A patent/CN117096012B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08255905A (en) * | 1995-03-17 | 1996-10-01 | Nec Corp | Fabrication of semiconductor device |
| KR19990060851A (en) * | 1997-12-31 | 1999-07-26 | 김영환 | Field oxide film formation method of a semiconductor device |
| CN1462463A (en) * | 2001-04-24 | 2003-12-17 | 松下电工株式会社 | Field emission electron source and production method thereof |
| US6455382B1 (en) * | 2001-05-03 | 2002-09-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multi-step method for forming sacrificial silicon oxide layer |
| JP2003151977A (en) * | 2001-11-13 | 2003-05-23 | Mitsubishi Electric Corp | Method for manufacturing semiconductor device and apparatus for forming thin film |
| CN103262222A (en) * | 2010-11-10 | 2013-08-21 | 信越半导体股份有限公司 | Method for forming thermal oxide film of monocrystalline silicon wafer |
| CN104701155A (en) * | 2013-12-09 | 2015-06-10 | 中芯国际集成电路制造(上海)有限公司 | Gate oxide layer manufacturing method |
| CN106158583A (en) * | 2015-04-01 | 2016-11-23 | 北大方正集团有限公司 | A kind of silicon wafer forms the method for sacrificial oxide layer |
| CN108766887A (en) * | 2018-05-25 | 2018-11-06 | 中国科学院微电子研究所 | The manufacturing method of groove MOSFET element based on two step microwave plasma oxidations |
| CN112447497A (en) * | 2019-08-28 | 2021-03-05 | 长鑫存储技术有限公司 | Oxide layer forming method, semiconductor device manufacturing method and semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN117096012A (en) | 2023-11-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101241835B (en) | Method of manufacturing bonded wafer | |
| CN100405558C (en) | Nitrogen passivation of interface states in SIO2/SIC structures | |
| CN112768346A (en) | Diffusion process method of selective emitter solar cell | |
| CN117096012B (en) | Oxide film, silicon wafer and preparation method thereof | |
| CN105731364A (en) | PDMS elastomer micro-nano processing method based on surface oxidation control transfer printing | |
| CN107078057B (en) | Heat treatment method for single crystal silicon wafer | |
| CN1989592A (en) | Production method for simox substrate | |
| CN1194382C (en) | Silicon-semiconductor lining and its producing method | |
| JPH06295912A (en) | Manufacture of silicon wafer and silicon wafer | |
| CN102254801B (en) | Method for controlling doping density of doped region of semiconductor device accurately | |
| CN108766887B (en) | The manufacturing method of groove MOSFET element based on two step microwave plasma oxidations | |
| KR20210055879A (en) | Vo2 film manufacturing method for smart window | |
| JPH11307526A (en) | Forming method of oxide film | |
| CN109671620A (en) | Impurity diffusion technology in semiconductor devices preparation process | |
| KR100432496B1 (en) | Manufacturing method for annealed wafer | |
| CN108666206B (en) | Oxidation of SiC method based on two step microwave plasma oxidations | |
| JPS61230329A (en) | Formation of oxide thin film on semiconductor surface | |
| KR101951799B1 (en) | Method and apparatus to fabricate polycrystal transparent yttrium oxide ceramic | |
| JPH1126457A (en) | Formation of silicon oxynitride film of semiconductor device | |
| CN106920745A (en) | It is a kind of to eliminate the light method for mixing annealing silicon wafer surface COP | |
| JPS6237937A (en) | Formation of thin oxide film on silicon substrate | |
| JPS63198334A (en) | Manufacture of semiconductor silicon wafer | |
| CN110184655B (en) | Surface oxidation method of wafer | |
| CN116959961A (en) | wafer and preparation method thereof | |
| CN109494147B (en) | Silicon carbide oxidation method based on microwave plasma under alternating voltage |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Country or region after: China Address after: 214203 Dongfeng Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Applicant after: Zhonghuan Leading Semiconductor Technology Co.,Ltd. Address before: 214203 Dongfeng Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Applicant before: Zhonghuan leading semiconductor materials Co.,Ltd. Country or region before: China |
|
| CB02 | Change of applicant information | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |