CN104701155A - Gate oxide layer manufacturing method - Google Patents

Gate oxide layer manufacturing method Download PDF

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CN104701155A
CN104701155A CN 201310660778 CN201310660778A CN104701155A CN 104701155 A CN104701155 A CN 104701155A CN 201310660778 CN201310660778 CN 201310660778 CN 201310660778 A CN201310660778 A CN 201310660778A CN 104701155 A CN104701155 A CN 104701155A
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oxide layer
gate oxide
manufacturing
trench
method
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CN 201310660778
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Chinese (zh)
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翟志刚
高文文
李凌云
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中芯国际集成电路制造(上海)有限公司
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Abstract

The invention provides a gate oxide layer manufacturing method. The gate oxide layer manufacturing method includes: placing a semiconductor substrate with a groove into a furnace tube and feeding oxygen into the furnace tube to form a first gate oxide layer on the sidewall and at the bottom of the groove; feeding nitrogen into the furnace tube and heating the furnace tube; feeding the oxygen and catalyzing gas into the furnace tube to form a second gate oxide layer on the first gate oxide layer. The thickness of the first gate oxide layer on the sidewall of the groove is larger than that of the same at the bottom of the groove, due to influences of the catalyzing gas and the formed first gate oxide layer, the thickness of the second gate oxide layer on the sidewall of the groove is smaller than that of the same at the bottom of the groove, and the second gate oxide layer is formed on the first gate oxide layer, so that the thickness difference between the sidewall and the bottom of the groove is reduced, evenness of the gate oxide layers is improved, and reliability of a device is improved.

Description

栅氧化层的制造方法 The method of manufacturing a gate oxide layer,

技术领域 FIELD

[0001] 本发明涉及半导体制造领域,特别涉及一种栅氧化层的制造方法。 [0001] The present invention relates to semiconductor manufacturing, and more particularly relates to a method of manufacturing a gate oxide layer.

背景技术 Background technique

[0002] 栅氧化层的制造工艺是半导体制造工艺中的关键技术,直接影响和决定了器件的电学特性和可靠性。 Manufacturing process [0002] gate oxide layer is a key technology in the semiconductor manufacturing process, and determines the direct impact on the electrical properties and reliability.

[0003] 传统的栅氧化层的制作工艺是采用热氧化法,在高温环境下,将半导体衬底暴露在含氧环境中,在所述半导体衬底的表面上形成栅氧化层,所述工艺在炉管中实现。 [0003] The conventional production process of the gate oxide layer is a thermal oxidation process, in a high temperature environment, the semiconductor substrate is exposed in an oxygen atmosphere, forming a gate oxide layer on the surface of said semiconductor substrate, said process achieved in the furnace tube. 但是, 如果需要在刻蚀后的沟槽中生长栅氧化层,例如沟槽功率器件,需要在高温环境下,将含有沟槽的半导体衬底暴露在含氧环境中,同时通入氮气,保证炉管有稳定的气流和温度分布, 从而在沟槽的侧壁和底部上形成栅氧化层。 However, if the gate oxide layer is grown in the trench after the etching, for example, a trench power devices, require a high temperature environment, the semiconductor substrate comprising a trench is exposed in an oxygen atmosphere, while introducing nitrogen gas, to ensure a stable gas flow tube and a temperature distribution, thereby forming a gate oxide layer on sidewalls and bottom of the trench.

[0004] 传统的栅氧化层的制造方法主要包含两个阶段;(1)升温阶段,将含有沟槽的半导体衬底放入炉管中,通入氮气,升高炉管的温度;(2)氧化阶段;通入氧气,在沟槽的侧壁和底部生成栅氧化层,此阶段持续的通入氮气;然后,降低炉管的温度,将半导体衬底退出炉管。 [0004] The conventional method of manufacturing a gate oxide layer mainly comprises two phases; (1) heating stage, a semiconductor substrate trench containing the tube placed in a furnace, purged with nitrogen, increasing the temperature of the tube; (2) oxidation stage; feeding oxygen to generate a gate oxide layer on the sidewalls and bottom of the trench, this stage lasts through nitrogen; then, lowering the temperature of the furnace tube, the semiconductor substrate tube exit.

[0005] 由于半导体衬底具有<100〉晶格的晶面上的娃原子密度是最低的,氧化速度也最慢,在该种衬底上刻蚀出沟槽后,侧壁的原子密度会大于衬底表面和沟槽底部,为了保证栅氧化层的击穿电压达标,需要使用较高的温度进行氧化,而炉管的升温较慢,在升温的过程中,为了防止娃片氮化,必须通入比较少量的氧气;当氧气被通入时,由于沟槽侧壁的娃原子密度比底部大,侧壁的氧化速度高于底部的氧化速度,因此少量的氧气几乎都被消耗在侧壁上,底部的氧化速度会非常慢,最终导致沟槽侧壁的栅氧化层的厚度大于沟槽底部的栅氧化层的厚度,从而影响栅氧化层的均匀性。 [0005] Since the semiconductor substrate has a <100> crystal face Wa lattice atom density is the lowest, slowest rate of oxidation, the kind of the substrate after etching the trench, the sidewall will atom density and a bottom surface of the substrate is greater than the trench, in order to ensure the breakdown voltage of the gate oxide layer standard, requires the use of high temperature oxidation, and slow heating furnace tube, during heating, the sheet in order to prevent the baby nitride, must flow into the relatively small amount of oxygen; when oxygen is passed in, the atom density since the baby is larger than the bottom of the trench sidewalls, the oxidation rate is higher than the oxidation rate of the side walls of the bottom, so a small amount of oxygen is consumed almost all of the side wall, the bottom of the oxidation rate is very slow, resulting in the thickness of the gate oxide thickness of the gate oxide layer is larger than the bottom of the trench the trench sidewalls, affecting the uniformity of the gate oxide layer.

[0006] 在一个深宽比大于2:1的沟槽中进行栅氧化层的生长,采用传统的栅氧化层的制造方法生成的栅氧化层,沟槽侧壁厚度与底部厚度的差异要高于49%。 [0006] In an aspect ratio greater than 2: a gate oxide layer is grown in a trench, the gate oxide layer using a conventional method of manufacturing a gate oxide layer is generated, and the difference in thickness of the bottom of the trench sidewall thickness higher to 49%.

[0007] 然而,随着半导体制造技术的飞速发展,为了达到更快的运算速度、更大的数据存储量W及更多的功能,半导体芯片朝向更高的器件密度、高集成度方向发展,因此,半导体器件的尺寸也随之减小。 [0007] However, with the rapid development of semiconductor manufacturing technology, to achieve faster operating speed, greater data storage capacity and more functions W, the semiconductor chip toward higher device densities, high integration direction, Thus, the size of the semiconductor device is also reduced. 其中,半导体器件尺寸在减小的过程中,其包含的栅氧化层的厚度也在不断减薄,因此,对于栅氧化层厚度的均匀性的要求越来越严格。 Wherein, in the process of reducing the size of the semiconductor device, the thickness of the gate oxide layer which comprises also increasingly thinner, and therefore, the requirements for the uniformity of the thickness of the gate oxide layer is more stringent. 沟槽中形成的栅氧化层,侧壁和底部相差较大会对半导体器件的开启电压和工作电压造成影响,进而影响器件的可靠性。 The gate oxide layer formed in the trench, the sidewalls and bottom of the large difference of the semiconductor device will turn on and operating voltages caused, and therefore affect device reliability.

[0008] 因此,如何减小沟槽中侧壁和底部的栅氧化层的厚度差异,成为当前亟需解决的技术问题。 [0008] Thus, how to reduce the difference in thickness of the gate oxide layer in the trench sidewalls and bottom, it becomes the current technical problem to be resolved.

发明内容 SUMMARY

[0009] 本发明提供了一种栅氧化层的制造方法,W解决现有技术中形成栅氧化层时,沟槽侧壁和底部的厚度差异较大的问题。 [0009] The present invention provides a method of manufacturing a gate oxide layer, W the gate oxide layer is formed to solve the prior art, the thickness of the trench sidewalls and bottom are quite different problem.

[0010] 本发明提供的栅氧化层的制造方法,包括: [0010] The method of manufacturing a gate oxide layer of the present invention provides, comprising:

[0011] 提供半导体衬底,所述半导体衬底上形成有沟槽; [0011] providing a semiconductor substrate, a groove is formed on the semiconductor substrate;

[0012] 将所述半导体衬底放入炉管内,通入氧气,在所述沟槽的侧壁及底部形成第一栅氧化层; [0012] The semiconductor substrate into the furnace tube, into oxygen, forming a first gate oxide layer on the trench sidewalls and bottom;

[0013] 向炉管中通入氮气,并升高炉管的温度; [0013] sparged with nitrogen and the furnace tube, and raising the temperature of the tube;

[0014] 向炉管中通入氧气与催化气体,在第一栅氧化层上形成第二栅氧化层。 [0014] Catalytic gas and oxygen into the furnace tube, forming a second gate oxide layer on the first gate oxide layer.

[0015] 进一步的,所述第一栅氧化层的厚度为50A-150A。 [0015] Further, the thickness of the first gate oxide layer is 50A-150A.

[0016] 进一步的,形成第一栅氧化层的炉管温度为80(TC~85(TC。 Tube temperature [0016] Further, forming a first gate oxide layer 80 (TC ~ 85 (TC.

[0017] 进一步的,形成第一栅氧化层的氧气的流量大于等于10升每分钟。 [0017] Further, the flow rate of oxygen forming a first gate oxide layer is not less than 10 liters per minute.

[001引进一步的,向炉管中通入氮气的步骤中,所述炉管的最终温度为lOOOC~ iiocrc。 [Cited Further, the step of introducing nitrogen to a furnace tube 001, the final temperature of the furnace tube is lOOOC ~ iiocrc.

[0019] 进一步的,所述催化气体为含氯气体。 [0019] Further, the chlorine-containing gas to catalytic gas.

[0020] 进一步的,所述含氯气体为氯化氨和/或C2H4CI2。 [0020] Further, the chlorine-containing gas is ammonia chloride and / or C2H4CI2.

[0021] 进一步的,所述含氯气体的流量为0.2升每分钟~0.8升每分钟。 [0021] Further, the chlorine-containing gas flow rate of 0.2 liters per minute to 0.8 liters per minute.

[0022] 进一步的,形成第二栅氧化层的氧气的流量大于等于10升每分钟。 [0022] Further, the flow rate of oxygen forming a second gate oxide layer is not less than 10 liters per minute.

[0023] 进一步的,所述第一栅氧化层与第二栅氧化层的厚度之和大于400A。 [0023] Further, the thickness of the first gate oxide layer and the second gate oxide layer is greater than 400A.

[0024] 进一步的,所述沟槽侧壁的厚度与沟槽底部的厚度的差异小于30%。 [0024] Further, differences in the thickness of the bottom of the trench the trench sidewall thickness is less than 30%.

[00巧]进一步的,所述沟槽的深宽比大于2:1。 [Qiao 00] Further, the aspect ratio of the trench is greater than 2: 1.

[0026] 进一步的,刻蚀所述半导体衬底形成沟槽,被刻蚀的一面为<100〉晶格。 [0026] Further, the semiconductor substrate is etched trench is formed, the etched side is <100> lattice.

[0027] 与现有技术相比,本发明具有W下优点: [0027] Compared with the prior art, the present invention has the following advantages W:

[0028] 综上所述,本发明提供的栅氧化层的制造方法,将栅氧化层的生成分为主要的H 个步骤,先在炉管的正常温度下通入氧气形成第一栅氧化层,然后通入氮气并进行炉管升温,最后通入氧气与催化气体在所述第一栅氧化层上形成第二栅氧化层,第一栅氧化层在沟槽侧壁的厚度大于沟槽底部的厚度,第二栅氧化层因为有催化气体W及之前形成的第一栅氧化层的影响,其在沟槽侧壁的厚度小于沟槽底部的厚度,第二栅氧化层形成在第一栅氧化层之上,达到减小沟槽侧壁和底部厚度差异的问题,提高栅极氧化层的均匀性,从而提高器件的可靠性。 [0028] In summary, a method for producing a gate oxide layer of the present invention provides the generated gate oxide layer into the H main steps, first at normal temperature oxygen gas into the furnace tube forming a first gate oxide layer and then purged with nitrogen and heated furnace tube, and finally passed through a catalytic gas of oxygen and a second gate oxide layer on the first gate oxide layer, a first gate oxide layer on the trench sidewalls is greater than the thickness of the bottom of the trench the thickness of the second gate oxide layer and because of the influence of the oxide layer formed in a catalytic gas W before the first gate, which is smaller than the thickness of the trench bottom of the trench sidewall thickness, the second gate oxide layer formed on the first gate over the oxide layer, to reduce the problem of the difference in thickness of the trench sidewalls and bottom, improve the uniformity of the gate oxide layer, thereby improving the reliability of the device.

附图说明 BRIEF DESCRIPTION

[0029] 图1为本发明一实施例所提供的栅氧化层的制造方法的流程示意图。 [0029] FIG 1 showing the method of manufacturing a gate oxide layer provided according to an embodiment of the present invention.

具体实施方式 detailed description

[0030] W下结合附图和具体实施例对本发明提出的栅氧化层的制造方法做进一步详细说明。 [0030] conjunction with the accompanying drawings and specific embodiments described in further detail a method of manufacturing a gate oxide layer of the present invention is proposed under W. 根据下面说明和权利要求书,本发明的优点和特征将更清楚,需说明的是,附图均采用非常简化的形式且均使用非精准的比率,仅用于方便、明晰地辅助说明本发明实施例的目的。 The following description and the appended claims, features and advantages of the present invention will become more apparent, should be noted that the drawings are a very simplified form and using a non-precise ratios are only for convenience, the present invention is of assistance in explaining lucid the purpose of the embodiment.

[0031] 图1为本发明一实施例所提供的栅氧化层的制造方法的流程示意图,如图1所示, 本发明提出的一种栅氧化层的制造方法,包括W下步骤: [0031] Figure 1 is a schematic flow diagram of a method of manufacturing a gate oxide layer provided according to an embodiment of the invention shown in FIG. 1, a method of manufacturing a gate oxide layer is made of the present invention, W comprises the steps of:

[0032] 步骤SOI;提供半导体衬底,所述半导体衬底上形成有沟槽; [0032] The step of the SOI; providing a semiconductor substrate, a groove is formed on the semiconductor substrate;

[0033] 步骤S02 ;将所述半导体衬底放入炉管内,通入氧气,在所述沟槽的侧壁及底部形成第一栅氧化层; [0033] Step S02 is; the semiconductor substrate into the furnace tube, into oxygen, forming a first gate oxide layer on the trench sidewalls and bottom;

[0034] 步骤S03 ;向炉管中通入氮气,并升高炉管的温度; [0034] Step S03; the tube was flushed with nitrogen, and raising the temperature of the furnace tube;

[0035] 步骤S04 ;向炉管中通入氧气与催化气体,在第一栅氧化层上形成第二栅氧化层。 [0035] Step S04; feeding oxygen gas to the furnace and the catalytic tube, a second gate oxide layer is formed on the first gate oxide layer.

[0036] W下详细说明本发明提出的栅氧化层的制造方法: [0036] described in detail the method of manufacturing a W gate oxide layer is made of the present invention:

[0037] 在步骤SOI中,提供半导体衬底,采用曝光与刻蚀的方法在所述半导体衬底上形成沟槽。 [0037] In step SOI, there is provided a semiconductor substrate, using the exposure method and etching a trench formed on the semiconductor substrate. 本实施例中,所述沟槽的深宽比大于2:1,本发明所提供的栅氧化层的制造方法比较适用于深宽比大于2:1的沟槽,需要说明的是,也可W用于制造深宽比小于2:1的沟槽的栅氧化层,不过沟槽的深宽比比较小的情况下,使用传统的栅氧化层的制造方法就可W到达工艺要求;所述半导体衬底被刻蚀形成沟槽的一面为<100〉晶格。 Aspect ratio in the present embodiment, the groove is greater than 2: 1, the manufacturing method of the gate oxide layer of the present invention provides a more suitable for an aspect ratio greater than 2: 1 in the groove, should be noted that, also W for manufacturing aspect ratio less than 2: 1 trench gate oxide layer, but the case where the aspect ratio of the trench is relatively small, the conventional method for producing a gate oxide layer W can reach the process requirements; the the semiconductor substrate is etched to form the trench side the <100> lattice.

[0038] 在步骤S02中,将所述半导体衬底放入炉管内,此时保持炉管的温度保持在低温状态,为800°C~850°C,例如800°C、810°C、820°C、830°C、840°C、850°C,较佳的炉管温度为83(TC。向炉管中通入氧气,氧气的流量大于等于10升每分钟,例如10升每分钟、20升每分钟、30升每分钟,较佳的氧气流量为10升每分钟。通过氧化反应在所述半导体衬底沟槽的侧壁及底部形成第一栅氧化层。 [0038] In step S02, the semiconductor substrate into the furnace tube, this time holding the tube furnace maintaining the temperature at a low temperature, is 800 ° C ~ 850 ° C, e.g. 800 ° C, 810 ° C, 820 ° C, 830 ° C, 840 ° C, 850 ° C, the preferred temperature of the furnace tube 83 (TC. tube into the furnace through the oxygen gas flow rate of oxygen is not less than 10 liters per minute, for example, 10 liters per minute, 20 liters per minute, 30 liters per minute, preferably oxygen gas flow volume of 10 liters per minute. the first gate oxide layer formed by oxidation at the sidewalls and bottom of the trench of the semiconductor substrate.

[0039] 由于炉管的温度比较低,氧化的速度比较慢,使用大气流可W保证沟槽底部也可W得到充分的氧气,避免了现有技术中氧气分布不均匀的问题,此阶段生成的第一栅氧化层的厚度为50A~150A,例如50 人、70A、90A、lOOA、110A、130A、150A, 较佳的第一栅氧化层的厚度为100A。 [0039] Since the temperature of the furnace tube is relatively low, the oxidation speed is slower, air flow may be used to ensure that the bottom of the trench W W can obtain sufficient oxygen, avoiding the problems of the prior art non-uniform distribution of the oxygen, generated at this stage thickness of the first gate oxide layer 50A ~ 150A, for example 50, 70A, 90A, lOOA, 110A, 130A, 150A, the preferred thickness of the first gate oxide layer 100A. 需要说明的是,虽然保证沟槽底部具有充足的氧气, 但是由于所述半导体衬底使用的是<100〉晶格,因此所述沟槽底部的娃原子密度会比沟槽侧壁的娃原子密度低,氧化的速度比较慢,因此沟槽侧壁上形成的所述第一栅氧化层的厚度大于沟槽底部形成的所述第一栅氧化层的厚度,一般情况下,沟槽侧壁的厚度比沟槽底部的厚度要厚50%左右。 Incidentally, although the bottom of the trench to ensure that with sufficient oxygen, but since the semiconductor substrate using a <100> lattice, so the groove bottom baby doll atom density may atomic ratio sidewalls of the trench low density, oxidized more slowly, thus formed on the trench sidewalls of the first gate oxide thickness greater than the thickness of the first gate oxide layer is formed on the bottom of the trench, in general, the trench sidewalls thickness than the bottom of the trench to a thickness of about 50%.

[0040] 在步骤S03中,向炉管中通入氮气,并升高炉管的温度。 [0040] In step S03, blowing nitrogen gas into the furnace tube, and raising the temperature of the furnace tube. 通入氮气可W保证炉管内的气流稳定,使得温度的分布比较均匀。 W may be sparged with nitrogen to ensure a stable air flow inside the tube, so that the temperature distribution uniform. 本实施例中,炉管的温度需要升高至l〇〇(TC~ llOCrC,例如10001:、10251:、10501:、10751:、11001:,较佳的炉管温度为10501:。由于已经在沟槽的底部及侧壁上生长了第一栅氧化层,不需要再担也半导体衬底被高温氮化,可W在不通入氧气的情况下将炉管的温度升高至下一阶段所需要的温度。 In this embodiment, the temperature needs to be raised to a furnace tube l〇〇 (TC ~ llOCrC, e.g. 10001:, 10251:, 10501:, 10751: 11001 :, preferred temperature furnace tube 10501 has since :. bottom and sidewalls of the trench gate oxide grown on the first layer, also do not need to bear the high temperature of the semiconductor substrate is nitride, W may be oxygen gas barrier in the case where the temperature of the tubes is raised to the next stage the required temperature.

[0041] 在步骤S04中,向炉管中通入氧气与催化气体,在第一栅氧化层上形成第二栅氧化层。 [0041] In step S04, the oxygen gas and the catalytic gas through the furnace tube, forming a second gate oxide layer on the first gate oxide layer. 所述催化气体是含氯气体,本实施例中,含氯气体是氯化氨和/或C2H4CI2,也可W是本领域技术人员已知的其他催化气体;含氯气体可W提升半导体衬底<100〉晶面的氧化速度,使得所述沟槽底部的氧化速度高于所述沟槽侧壁的氧化速度,并且由于所述沟槽侧壁上的第一栅氧化层的厚度大于所述沟槽底部的第一栅氧化层的厚度,氧气的扩散会受到已有的第一栅氧化层的抑制,因此该阶段所述沟槽底部的氧化速度会超过侧壁的氧化速度, 沟槽侧壁上生成的第二栅氧化层的厚度小于底部上生成的第二栅氧化层的厚度。 The catalytic gas is a chlorine-containing gas, in the present embodiment, ammonia gas is a chlorine-containing chloride and / or C2H4CI2, W may be other catalytic gas known to the skilled person; chlorine-containing gas may enhance the semiconductor substrate W <100> crystallographic plane of the rate of oxidation, the oxidation rate such that the bottom of the trench is higher than the rate of oxidation of the sidewalls of the trench, and since the thickness of the first gate oxide layer on the trench sidewalls is greater than the the thickness of the first gate oxide layer bottom of the trench, diffusion of oxygen will be suppressed existing first gate oxide layer, the oxidation rate and therefore the phase of the trench bottom more than the oxidation rate of the side walls, the trench side thickness of the second gate oxide layer is produced on the bottom wall thickness of the second gate oxide generating layer is less than.

[0042] 所述含氯气体的流量为0. 2升每分钟~0. 8升每分钟,例如0. 2升每分钟、0. 4升每分钟、0. 6升每分钟、0. 8升每分钟,较佳的含氯气体的流量为0. 4升每分钟;所述氧气的流量不低于10升每分钟,例如10升每分钟、20升每分钟、30升每分钟,较佳的氧气的流量为10升每分钟。 [0042] The chlorine-containing gas flow rate of 0.2 l ~ 0.8 liters per minute, for example, 0.2 liters, 0.4 liters per minute, 0.6 liters, 0.8 per minute l, the preferred chlorine-containing gas flow rate of 0.4 liters per minute per minute; flow rate of the oxygen gas is not less than 10 liters per minute, for example, 10 liters, 20 liters per minute, 30 liters per minute, more excellent oxygen gas flow rate of 10 liters per minute. 所述氧气的流量大于等于10升每分钟,例如10升每分钟、20升每分钟、30 升每分钟,较佳的氧气流量为10升每分钟。 The flow rate of oxygen is not less than 10 liters per minute, for example, 10 liters, 20 liters per minute, 30 liters per minute, preferably oxygen gas flow volume of 10 liters per minute.

[0043] 本实施例中,所述第一栅氧化层与所述第二栅氧化层的厚度之和大于400 乂,此时所述沟槽侧壁与底部的厚度差异小于30%,例如在所述第一栅氧化层与第二栅氧化层的厚度之和为500A的情况下,所述沟槽侧壁与底部的厚度差异减小到27%左右,如果形成的第一栅氧化层和第二栅氧化层的厚度增加,则沟槽侧壁和底部的厚度差异将进一步减小。 [0043] In this embodiment, the thickness of the first gate oxide and the gate oxide layer and the second layer is greater than 400 Yi in this case the difference in thickness of the trench sidewalls and bottom is less than 30%, e.g. a case where the thickness of the first gate and the second gate oxide layer and the oxide layer is 500A, the difference in thickness of the bottom and sidewalls of the trench is reduced to about 27%, and if the first gate oxide layer formed thickness of the second gate oxide layer increases, the difference in thickness of the trench sidewalls and bottom will be further reduced.

[0044] 本发明所提供的栅氧化层的制造方法,在步骤S02中生成的第一栅氧化层,在沟槽侧壁上的厚度大于沟槽底部的厚度,在步骤S04中生成的第二栅氧化层,由于催化气体W及所述第一栅氧化层的影响,在沟槽侧壁上的厚度小于沟槽底部的厚度,虽然第一栅氧化层在沟槽侧壁与底部的厚度差与第二栅氧化层在沟槽侧壁与底部的厚度差并不相同,但是可W在一定程度上减小沟槽侧壁与底部的厚度差异。 [0044] The method of manufacturing a gate oxide layer of the present invention provides, in a first gate oxide layer generated in step S02, a thickness greater than the thickness on the sidewalls of the trench bottom of the trench, in a second step S04 generated a gate oxide layer, the influence of catalytic gas W and the first gate oxide layer, the thickness on the trench sidewalls is less than the thickness of the bottom of the trench, although the thickness of the first gate oxide layer in the trench sidewalls and bottom difference and a second gate oxide thickness difference is not the same in the trench sidewalls and bottom, but can reduce the difference in thickness W and the trench sidewalls at the bottom to a certain extent.

[0045] 综上所述,本发明提供的栅氧化层的制造方法,将栅氧化层的生成分为主要的H 个步骤,先在炉管的正常温度下通入氧气形成第一栅氧化层,然后通入氮气并进行炉管升温,最后通入氧气与催化气体在所述第一栅氧化层上形成第二栅氧化层,第一栅氧化层在沟槽侧壁的厚度大于沟槽底部的厚度,第二栅氧化层因为有催化气体W及之前形成的第一栅氧化层的影响,其在沟槽侧壁的厚度小于沟槽底部的厚度,第二栅氧化层形成在第一栅氧化层之上,达到减小沟槽侧壁和底部厚度差异的问题,提高栅极氧化层的均匀性,从而提高器件的可靠性。 [0045] In summary, a method for producing a gate oxide layer of the present invention provides the generated gate oxide layer into the H main steps, first at normal temperature oxygen gas into the furnace tube forming a first gate oxide layer and then purged with nitrogen and heated furnace tube, and finally passed through a catalytic gas of oxygen and a second gate oxide layer on the first gate oxide layer, a first gate oxide layer on the trench sidewalls is greater than the thickness of the bottom of the trench the thickness of the second gate oxide layer and because of the influence of the oxide layer formed in a catalytic gas W before the first gate, which is smaller than the thickness of the trench bottom of the trench sidewall thickness, the second gate oxide layer formed on the first gate over the oxide layer, to reduce the problem of the difference in thickness of the trench sidewalls and bottom, improve the uniformity of the gate oxide layer, thereby improving the reliability of the device.

[0046] 上述描述仅是对本发明较佳实施例的描述,并非对本发明范围的任何限定,本发明领域的普通技术人员根据上述掲示内容做的任何变更、修饰,均属于权利要求书的保护范围。 [0046] The above description is a description of the preferred embodiments of the present invention, and are not in any limiting the scope of the present invention, the art of the present invention of ordinary skill in the art to make according to the above kei shows the contents of any change, modification, all fall within the scope of the claims .

Claims (13)

  1. 1. 一种栅氧化层的制造方法,其特征在于,包括: 提供半导体衬底,所述半导体衬底上形成有沟槽; 将所述半导体衬底放入炉管内,通入氧气,在所述沟槽的侧壁及底部形成第一栅氧化层; 向炉管中通入氮气,并升高炉管的温度; 向炉管中通入氧气与催化气体,在第一栅氧化层上形成第二栅氧化层。 1. A method of manufacturing a gate oxide layer, comprising: providing a semiconductor substrate, a trench is formed on a semiconductor substrate; the semiconductor substrate into the furnace tube, into oxygen, in the a first gate oxide layer is formed sidewalls and bottom of said trench; blowing nitrogen gas into the furnace tube, and raising the temperature of the tube; feeding oxygen gas to the furnace and the catalytic tube, forming a first oxide layer on the first gate two gate oxide layer.
  2. 2. 如权利要求1所述的栅氧化层的制造方法,其特征在于,所述第一栅氧化层的厚度为50人~丨50人。 2. The method of manufacturing a gate oxide layer as claimed in claim, wherein the thickness of the first gate oxide layer 50 is 50 ~ Shu.
  3. 3. 如权利要求2所述的栅氧化层的制造方法,其特征在于,形成第一栅氧化层的炉管温度为800°C~850°C。 The method of manufacturing a gate oxide layer as claimed in claim 3, wherein the temperature of the furnace tube forming a first gate oxide layer is 800 ° C ~ 850 ° C.
  4. 4. 如权利要求3所述的栅氧化层的制造方法,其特征在于,形成第一栅氧化层的氧气的流量大于等于10升每分钟。 The method of manufacturing a gate oxide layer 3 as claimed in claim 4, characterized in that the flow rate of oxygen is formed first gate oxide layer is not less than 10 liters per minute.
  5. 5. 如权利要求1所述的栅氧化层的制造方法,其特征在于,向炉管中通入氮气的步骤中,所述炉管的最终温度为l〇〇〇°C~1KKTC。 5. The method of manufacturing a gate oxide layer as claimed in claim, wherein the step of introducing nitrogen to a furnace tube, the final temperature of the furnace tube is l〇〇〇 ° C ~ 1KKTC.
  6. 6. 如权利要求1所述的栅氧化层的制造方法,其特征在于,所述催化气体为含氯气体。 The method of manufacturing a gate oxide layer as claimed in claim 6, wherein said gas is a chlorine-containing gas catalyst.
  7. 7. 如权利要求6所述的栅氧化层的制造方法,其特征在于,所述含氯气体为氯化氢和/ 或C2H4C12。 7. The method of manufacturing a gate oxide layer 6 claim, wherein said chlorine-containing gas is hydrogen chloride and / or C2H4C12.
  8. 8. 如权利要求7所述的栅氧化层的制造方法,其特征在于,所述含氯气体的流量为0. 2 升每分钟~0.8升每分钟。 8. The method of manufacturing a gate oxide layer as claimed in claim, wherein said chlorine-containing gas flow rate of 0.2 liters per minute to 0.8 liters per minute.
  9. 9. 如权利要求1所述的栅氧化层的制造方法,其特征在于,形成第二栅氧化层的氧气的流量大于等于10升每分钟。 The method of manufacturing a gate oxide layer as claimed in claim 9, characterized in that the flow rate of oxygen forming a second gate oxide layer is not less than 10 liters per minute.
  10. 10. 如权利要求1所述的栅氧化层的制造方法,其特征在于,所述第一栅氧化层与第二栅氧化层的厚度之和大于400A。 10. The method of manufacturing a gate oxide layer as claimed in claim, wherein the thickness of said first gate oxide layer and the second gate oxide layer is greater than 400A.
  11. 11. 如权利要求10所述的栅氧化层的制造方法,其特征在于,所述沟槽侧壁的厚度与沟槽底部的厚度的差异小于30%。 11. The method of manufacturing a gate oxide layer according to claim 10, characterized in that the difference in thickness of the thickness of the bottom of the trench sidewall of the trench is less than 30%.
  12. 12. 如权利要求1~11中任意一项所述的栅氧化层的制造方法,其特征在于,所述沟槽的深宽比大于2:1。 12, wherein the method of manufacturing a gate oxide layer is 1 to 11, in any one of the claims, the aspect ratio of the trench is greater than 2: 1.
  13. 13. 如权利要求1~11中任意一项所述的栅氧化层的制造方法,其特征在于,刻蚀所述半导体衬底形成沟槽,被刻蚀的一面为〈1〇〇>晶格。 13. The production method according to any one of the gate oxide layer, characterized in that the claims 1 to 11, the semiconductor substrate is etched trench is etched side <1〇〇> lattice .
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