CN102254801B - Method for controlling doping density of doped region of semiconductor device accurately - Google Patents
Method for controlling doping density of doped region of semiconductor device accurately Download PDFInfo
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- CN102254801B CN102254801B CN 201110224158 CN201110224158A CN102254801B CN 102254801 B CN102254801 B CN 102254801B CN 201110224158 CN201110224158 CN 201110224158 CN 201110224158 A CN201110224158 A CN 201110224158A CN 102254801 B CN102254801 B CN 102254801B
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Abstract
The invention provides a method for controlling the doping density of a doped region of a semiconductor device accurately. In the method, a silicon wafer is oxidized; a photoresist is added to a boron emulsion source in the coating process; and the boron emulsion source is mixed with the photoresist, and the mixture is placed in a stirring vessel for sufficient stirring so as to obtain an emulsion source coating liquid, wherein the photoresist is carbonized at a high temperature to so as to remove gases carried in the diffusion process, thus obtaining the required impurity density distribution in a boron region. The method is easy and convenient to operate, simple in equipment and is suitable for massive production. The diffusion parameters of the method can be controlled and adjusted freely; the doping density is adjustable; a silica oxidation layer is formed on the silicon wafer by diffusible oxidation; the thickness accuracy in oxidization is controlled so as to reach the density for controlling diffusion impurities accurately; the technological process is simplified; the production cost is reduced; and the yield of the semiconductors is improved by over 20%. The method is particularly suitable for low and medium-grade semiconductor manufacturers to produce the semiconductors massively; and the method has the advantage of remarkable economic benefit.
Description
Technical field
The present invention relates to microelectronics technology, especially relate to a kind of method of accurate control doping density of doped region of semiconductor device.
Background technology
The accurate distribution technical process of the impurity of existing power device is height and the inhomogeneity key technology that determines the parameter of a device.Substantially use two kinds of methods when adulterating for doped region: boron or phosphorus plasma method for implanting and the method for utilizing latex source or gaseous source in High temperature diffusion.Need ion implantor for ion injection method, this equipment is comparatively expensive, and the cost of processing is very high, and the producer that much makes low-grade semiconductor product is difficult to bear.For direct with latex source or gaseous source when the method for High temperature diffusion is mixed impurity at the high boron square resistance of needs, dense due to impurity source, thereby precision is very poor, generally its error of square resistance left and right for 200 ohms/square reaches 10%, and the square resistance more than 500 ohms/square just is difficult to make.The semiconductor device parameter consistency of so making is very poor: as conducting resistance, puncture voltage, multiplication factor etc.
Oxide layer in traditional fabrication of semiconductor device is to be used to isolate fully diffusing into of impurity, namely has the impurity such as local boron, phosphorus of oxide layer not diffuse into.The thickness of major requirement silicon dioxide is the thick diffusion that can stop impurity enough.If the impurity such as the thickness low LCL boron of silicon dioxide, phosphorus will diffuse into.Therefore, for semiconductor product cheaply be particularly the semiconductor power device produce market in the urgent need to a kind of namely can accurately control boron doped technology of mixing concentration simultaneously manufacturing cost can not increase again too much.
Summary of the invention
A kind of method that the purpose of this invention is to provide accurate control doping density of doped region of semiconductor device.Poor to solve the existing doping accuracy of prior art, cost is than the high-technology problem.
For solving the problems of the technologies described above, the present invention accurately controls the method for doping density of doped region of semiconductor device, when described semiconductor device boron doped region carries out doped in concentrations profiled, add photoresist in boron latex source, the weight proportion that adds is boron latex source: photoresist is 1:0.2～0.5 gram; After boron latex source and photoresist mix and will both put into and stir ware and stir fully, thereby obtain described latex source coating liquid, mixing time is 2～5 hours, notices during mixing that vessel used can not introduce other impurity source and polluter; Then carry out following steps: (1), the silicon chip that at first needs is mixed impurity carry out oxidation, and oxidizing temperature is 500～1000 ℃, and oxide thickness is 100～200 dusts; (2), apply latex source coating liquid on the silicon chip after oxidation, coat thickness is 2500～2800 dusts; (3), the silicon chip after gluing is placed under the infrared lamp of 120 °～180 ° and toasted 15～20 minutes, make the organic solvent performance in described coat; (4), silicon chip is placed on quartz glass plate, send into diffusion furnace, spread 2～4.5 hours under the high temperature of 1100 °～1250 °; (5), will spread good silicon chip and be placed on the flat-temperature zone, and pass into oxygen.
As preferably, described when boron doped region doping content is controlled, during execution in step (2), described coating liquid is latex mixing coating liquid.
As preferably, thus described photoresist remove with the gas that carries in diffusion process at high temperature cabonization, the boron district impurities concentration distribution that needing to obtain.
The present invention is easy and simple to handle, equipment is simple, be suitable for generation in enormous quantities, the method diffusion parameter can arbitrarily be controlled adjustment, and doping content is adjustable, generates the silicon dioxide oxide layer by diffusible oxydation on silicon chip, control the thickness and precision of oxidation, reach the concentration of accurate control diffusion impurity, simplification of flowsheet reduces production costs.The rate of finished products of product can improve more than 20%, is specially adapted to the batch production of low and middle-grade semiconductor producer, and significant economic benefit is arranged.
Embodiment
In order to make purpose of the present invention, technical scheme clearer, below by embodiment, and by reference to the accompanying drawings, technical scheme of the present invention is further described in detail.
Embodiment 1
The first step, the silicon chip that at first needs is mixed impurity carries out oxidation, and oxidizing temperature is controlled at 500 ℃, and oxide thickness is 100 dusts; Second step applies latex source coating liquid (this latex source select phosphorus containing silicon dioxide latex source) on the silicon chip after oxidation, coat thickness is 2500 dusts; The 3rd step was placed in the silicon chip after gluing under the infrared lamp of 130 ° baking 15 minutes, made the organic solvent performance in collagen; The 4th step was placed on silicon chip on quartz glass plate, sent into diffusion furnace, spread under the high temperature of 1150 ° 2.5 hours; In the 5th step, it is cooling and pass into oxygen that the silicon chip that diffusion is good is put into the flat-temperature zone, and so accurately the semiconductor device of controlled doping district doping content completes.
Embodiment 2
The first step, the silicon chip that at first needs is mixed impurity carries out oxidation, and oxidizing temperature is controlled at 800 ℃, and oxide thickness is 150 dusts; Second step applies latex source coating liquid (this latex source select phosphorus containing silicon dioxide latex source) on the silicon chip after oxidation, coat thickness is 2650 dusts; The 3rd step was placed in the silicon chip after gluing under the infrared lamp of 150 ° baking 18 minutes, made the organic solvent performance in collagen; The 4th step was placed on silicon chip on quartz glass plate, sent into diffusion furnace, spread under the high temperature of 1200 ° 4 hours; In the 5th step, it is cooling and pass into oxygen that the silicon chip that diffusion is good is put into the flat-temperature zone, and so accurately the semiconductor device of controlled doping district doping content completes.
Embodiment 3
The first step, the silicon chip that at first needs is mixed impurity carries out oxidation, and oxidizing temperature is controlled at 1000 ℃, and oxide thickness is 200 dusts; Second step applies latex source coating liquid (this latex source select phosphorus containing silicon dioxide latex source) on the silicon chip after oxidation, coat thickness is 2800 dusts; The 3rd step was placed in the silicon chip after gluing under the infrared lamp of 180 ° baking 20 minutes, made the organic solvent performance in collagen; The 4th step was placed on silicon chip on quartz glass plate, sent into diffusion furnace, spread under the high temperature of 1250 ° 4.5 hours; In the 5th step, it is cooling and pass into oxygen that the silicon chip that diffusion is good is put into the flat-temperature zone, and so accurately the semiconductor device of controlled doping district doping content completes.
Embodiment 4
The first step adds photoresist in boron latex source, the weight proportion that adds is boron latex source: photoresist is the 1:0.2 gram; Second step, after boron latex source and photoresist mix and will both put into and stir ware and stir fully, the time is 2 hours, notices during mixing that vessel used can not introduce other impurity source and polluter; The 3rd step applied above-mentioned latex mixing coating liquid on silicon chip by coating machine, coating thickness is 2500 dusts; The 4th step was placed in the silicon chip after gluing under the infrared lamp of 120 ° baking 15 minutes, made the organic solvent performance in collagen; The 5th step was placed on silicon chip on quartz glass plate, sent into diffusion furnace, spread under the high temperature of 1100 ° 2 hours.Thereby photoresist can carbonization when high temperature be removed with the gas that carries in diffusion process, thus the boron district impurities concentration distribution that needing to obtain; In the 6th step, it is cooling and pass into oxygen that the silicon chip that diffusion is good is put into the flat-temperature zone, and so accurately the semiconductor device of controlled doping district doping content completes.
Embodiment 5
The first step adds photoresist in boron latex source, the weight proportion that adds is boron latex source: photoresist is the 1:0.3 gram; Second step, after boron latex source and photoresist mix and will both put into and stir ware and stir fully, the time is 3.5 hours, notices during mixing that vessel used can not introduce other impurity source and polluter; The 3rd step applied above-mentioned latex mixing coating liquid on silicon chip by coating machine, coating thickness is 2650 dusts; The 4th step was placed in the silicon chip after gluing under the infrared lamp of 150 ° baking 18 minutes, made the organic solvent performance in collagen; The 5th step was placed on silicon chip on quartz glass plate, sent into diffusion furnace, spread under the high temperature of 1200 ° 4 hours.Thereby photoresist can carbonization when high temperature be removed with the gas that carries in diffusion process, thus the boron district impurities concentration distribution that needing to obtain; In the 6th step, it is cooling and pass into oxygen that the silicon chip that diffusion is good is put into the flat-temperature zone, and so accurately the semiconductor device of controlled doping district doping content completes.
Embodiment 6
The first step adds photoresist in boron latex source, the weight proportion that adds is boron latex source: photoresist is the 1:0.5 gram; Second step, after boron latex source and photoresist mix and will both put into and stir ware and stir fully, the time is 5 hours, notices during mixing that vessel used can not introduce other impurity source and polluter; The 3rd step applied above-mentioned latex mixing coating liquid on silicon chip by coating machine, coating thickness is 2800 dusts; The 4th step was placed in the silicon chip after gluing under the infrared lamp of 180 ° baking 20 minutes, made the organic solvent performance in collagen; The 5th step was placed on silicon chip on quartz glass plate, sent into diffusion furnace, spread under the high temperature of 1250 ° 4.5 hours.Thereby photoresist can carbonization when high temperature be removed with the gas that carries in diffusion process, thus the boron district impurities concentration distribution that needing to obtain; In the 6th step, it is cooling and pass into oxygen that the silicon chip that diffusion is good is put into the flat-temperature zone, and so accurately the semiconductor device of controlled doping district doping content completes.
Should be understood that, for those of ordinary skills, the above only is preferred embodiment of the present invention, not in order to limit the present invention, all within spiritual principles of the present invention, any modification of doing, replace and improvement etc. on an equal basis, all should be included in of the present invention comprise scope within.
Claims (3)
1. method of accurately controlling doping density of doped region of semiconductor device, it is characterized in that, when described semiconductor device boron doped region carries out doped in concentrations profiled, add photoresist in boron latex source, the weight proportion that adds is boron latex source: photoresist is 1:0.2～0.5 gram; After boron latex source and photoresist mix and will both put into and stir ware and stir fully, thereby obtain described latex source coating liquid, mixing time is 2～5 hours, notices during mixing that vessel used can not introduce other impurity source and polluter; Then carry out following steps: (1), the silicon chip that at first needs is mixed impurity carry out oxidation, and oxidizing temperature is 500～1000 ℃, and oxide thickness is 100～200 dusts; (2), apply latex source coating liquid on the silicon chip after oxidation, coat thickness is 2500～2800 dusts; (3), the silicon chip after gluing is placed under the infrared lamp of 120 ℃～180 ℃ and toasted 15～20 minutes, make the organic solvent performance in described coat; (4), silicon chip is placed on quartz glass plate, send into diffusion furnace, spread 2～4.5 hours under the high temperature of 1100 ℃～1250 ℃; (5), will spread good silicon chip and be placed on the flat-temperature zone, and pass into oxygen.
2. the method for a kind of accurate control doping density of doped region of semiconductor device according to claim 1, is characterized in that, during execution in step (2), described latex source coating liquid is latex mixing coating liquid.
3. the method for a kind of accurate control doping density of doped region of semiconductor device according to claim 1, is characterized in that, thus described photoresist remove with the gas that carries in diffusion process at high temperature cabonization, the boron district impurities concentration distribution that needing to obtain.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103594375B (en) * | 2013-10-22 | 2017-02-08 | 溧阳市东大技术转移中心有限公司 | Doping method of MOS device |
| CN103617948B (en) * | 2013-10-22 | 2016-09-28 | 溧阳市东大技术转移中心有限公司 | A kind of doping method of MOS device |
| CN104505345A (en) * | 2014-12-19 | 2015-04-08 | 扬州国宇电子有限公司 | Method for preparing Schottky diode P+ type diffusion protection ring by use of CSD process |
| CN116586265A (en) * | 2023-02-28 | 2023-08-15 | 浙江里阳半导体有限公司 | Latex source coating method and system, and latex source diffusion method and system |
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|---|---|---|---|---|
| US4604150A (en) * | 1985-01-25 | 1986-08-05 | At&T Bell Laboratories | Controlled boron doping of silicon |
| CN1057364A (en) * | 1990-11-24 | 1991-12-25 | 山东师范大学 | A kind of open tube aluminium-gallium diffusion process |
| CN1555086A (en) * | 2003-12-26 | 2004-12-15 | 金小玲 | Method for preparing high power semiconductor device by phosphorus containing silicon dioxide latex source expansion |
| CN101068003A (en) * | 2007-02-13 | 2007-11-07 | 江苏威斯特整流器有限公司 | Method for producing large power bidirectional thyratron transistor |
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2011
- 2011-08-06 CN CN 201110224158 patent/CN102254801B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4604150A (en) * | 1985-01-25 | 1986-08-05 | At&T Bell Laboratories | Controlled boron doping of silicon |
| CN1057364A (en) * | 1990-11-24 | 1991-12-25 | 山东师范大学 | A kind of open tube aluminium-gallium diffusion process |
| CN1555086A (en) * | 2003-12-26 | 2004-12-15 | 金小玲 | Method for preparing high power semiconductor device by phosphorus containing silicon dioxide latex source expansion |
| CN101068003A (en) * | 2007-02-13 | 2007-11-07 | 江苏威斯特整流器有限公司 | Method for producing large power bidirectional thyratron transistor |
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| 李观启等.用一次扩散获得不同硼杂质浓度和结深的研究.《半导体技术》.1986,(第3期),第11页-第14页. |
| 用一次扩散获得不同硼杂质浓度和结深的研究;李观启等;《半导体技术》;19860630(第3期);第12页第1栏第1-4行，图1a，表1 * |
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Application publication date: 20111123 Assignee: Shenzhen Jihua Micro Electronics Co. Ltd. Assignor: JILIN SINO-MICROELECTRONICS Co.,Ltd. Contract record no.: 2016990000372 Denomination of invention: Method for controlling doping density of doped region of semiconductor device accurately Granted publication date: 20130619 License type: Common License Record date: 20160902 |
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