CN117044405A - Plasma processing apparatus - Google Patents

Plasma processing apparatus Download PDF

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Publication number
CN117044405A
CN117044405A CN202280022235.3A CN202280022235A CN117044405A CN 117044405 A CN117044405 A CN 117044405A CN 202280022235 A CN202280022235 A CN 202280022235A CN 117044405 A CN117044405 A CN 117044405A
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China
Prior art keywords
dielectric
sides
dielectric plate
adjacent
plasma processing
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CN202280022235.3A
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Inventor
松尾大辅
安东靖典
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Nissin Electric Co Ltd
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Nissin Electric Co Ltd
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Publication of CN117044405A publication Critical patent/CN117044405A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/32119—Windows
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2015—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate the substrate being of crystalline semiconductor material, e.g. lattice adaptation, heteroepitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The invention aims to facilitate the processing of a dielectric plate and reduce the possibility of breakage of the dielectric plate due to thermal expansion of the dielectric plate. A plasma processing device (1) is provided with a vacuum container (2), an antenna (6), and a magnetic field introduction window (3), wherein the magnetic field introduction window (3) is provided with a metal plate (4) provided with a plurality of slits (41) and a bridging part (42), and a plurality of rectangular dielectric plates (5) covering the plurality of slits (41), and the plurality of dielectric plates (5) are arranged in such a manner that the sides of adjacent dielectric plates (5) which are mutually opposite and adjacent are positioned on the bridging part (42).

Description

Plasma processing apparatus
Technical Field
The present invention relates to a plasma processing apparatus.
Background
Patent document 1 discloses a plasma processing apparatus including: a metal plate having a slit formed therein; a dielectric plate which is supported in contact with the metal plate and blocks the slit; and an antenna which is provided outside the processing chamber so as to face the metal plate and generates a high-frequency magnetic field. The plasma processing apparatus disclosed in patent document 1 can efficiently supply a high-frequency magnetic field generated from an antenna to a processing chamber.
Prior art literature
Patent literature
Patent document 1: japanese laid-open patent publication No. 2020-198282 "
Disclosure of Invention
Problems to be solved by the invention
In the case of enlarging the plasma processing apparatus in order to enlarge the processing area for performing the plasma processing, there is a problem that the processing of the dielectric plate becomes difficult when one dielectric plate is supported in contact with the metal plate as in the plasma processing apparatus disclosed in patent document 1.
An object of an embodiment of the present invention is to facilitate handling of a dielectric plate and reduce the possibility of breakage of the dielectric plate due to thermal expansion of the dielectric plate.
Technical means for solving the problems
In order to solve the above problems, a plasma processing apparatus according to an embodiment of the present invention includes: a vacuum container for accommodating an object to be processed therein; an antenna which is arranged outside the vacuum container and generates a high-frequency magnetic field; and a magnetic field introduction window provided on a wall surface of the vacuum chamber, the magnetic field introduction window being provided with: a metal plate having a plurality of slits formed therein and having a bridge portion formed between the slits; and a plurality of rectangular dielectric plates arranged so as to cover the plurality of slits, wherein the plurality of dielectric plates are arranged so that sides of the adjacent dielectric plates, which are adjacent to each other in a facing manner, are positioned on the bridge portion.
ADVANTAGEOUS EFFECTS OF INVENTION
According to an embodiment of the present invention, the handling of the dielectric plate can be facilitated and the possibility of breakage of the dielectric plate due to thermal expansion of the dielectric plate can be reduced.
Drawings
Fig. 1 is a cross-sectional view showing a cross-sectional structure of a plasma processing apparatus according to embodiment 1 of the present invention.
Fig. 2 is a plan view of the plasma processing apparatus shown in fig. 1.
Fig. 3 is an enlarged view of a portion surrounded by a broken line DL shown in fig. 2.
Fig. 4 is a cross-sectional view showing the vicinity of the side 51A and the vicinity of the side 52A of the dielectric plate shown in fig. 3.
Fig. 5 is a diagram showing a configuration of a plasma processing apparatus according to embodiment 2 of the present invention.
Detailed Description
[ embodiment 1 ]
Structure of plasma processing apparatus 1
Fig. 1 is a cross-sectional view showing a cross-sectional structure of a plasma processing apparatus 1 according to embodiment 1 of the present invention. In fig. 1, the direction in which the antenna 6 extends is referred to as the X-axis direction, the direction from the vacuum chamber 2 toward the antenna 6 is referred to as the Z-axis direction, and the direction orthogonal to both the X-axis direction and the Z-axis direction is referred to as the Y-axis direction. The X-axis direction, the Y-axis direction, and the Z-axis direction are mutually orthogonal directions. Fig. 2 is a plan view of the plasma processing apparatus 1 shown in fig. 1. The antenna 6 and the high frequency power supply 7 are omitted in fig. 2.
As shown in fig. 1, the plasma processing apparatus 1 is an apparatus that performs plasma processing on an object to be processed W1 such as a substrate using an inductively coupled plasma P1. Here, the substrate is, for example, a substrate for a flat panel display (flat panel display, FPD) such as a liquid crystal display or an organic Electroluminescence (EL) display, or a flexible substrate for a flexible display. The object W1 to be processed may be a semiconductor substrate used for various purposes. Further, the object W1 to be processed is not limited to a substrate-like shape, for example, as in a tool. The treatment to be performed on the object W1 is, for example, film formation by a plasma chemical vapor deposition (Chemical Vapor Deposition, CVD) method or a sputtering method, etching by plasma, ashing, removal of a coating film, or the like.
The plasma processing apparatus 1 includes a vacuum chamber 2, a magnetic field introduction window 3, an antenna 6, a high-frequency power supply 7, and a holding portion 8. A processing chamber 21 into which a gas is introduced while being evacuated is formed inside the vacuum chamber 2. The vacuum vessel 2 is, for example, a metal vessel. An opening 23 penetrating in the thickness direction is formed in the wall surface 22 of the vacuum chamber 2. The vacuum vessel 2 is electrically grounded.
The gas introduced into the processing chamber 21 may be a gas corresponding to the processing content of the object W1 stored in the processing chamber 21. For example, in the case of forming a film on the object W1 by the plasma CVD method, the gas is a source gas or H is used 2 And the like, and the diluted gas is diluted by the diluent gas. Further specifically, the source gas is SiH 4 In the case of (2), a Si film may be formed on the object W1 to be processed, and SiH may be used as the source gas 4 +NH 3 In the case of (2), a SiN film may be formed on the object W1, and SiH may be used as the source gas 4 +O 2 In the case of (2), siO can be formed on the object W1 to be processed 2 A membrane of SiF as a raw material gas 4 +N 2 In the case of (2), siN may be formed on the object W1: f film (silicon fluoride nitride film).
Structure of magnetic field leading-in window 3
The magnetic field introduction window 3 has a metal plate 4 and a plurality of dielectric plates 5. The magnetic field introduction window 3 introduces the high-frequency magnetic field generated from the antenna 6 into the processing chamber 21 in order to generate plasma in the processing chamber 21. The metal plate 4 and the dielectric plate 5 are disposed in this order in the Z-axis direction.
The metal plate 4 is provided on the wall surface 22 of the vacuum chamber 2 so as to close the opening 23. The metal plate 4 is formed with a plurality of slits 41 penetrating the metal plate 4 in the Z-axis direction. As shown in fig. 2, the plurality of slits 41 extend in the Y-axis direction and are aligned in the X-axis direction. The metal plate 4 is disposed substantially parallel to the surface of the object W1. In addition, the metal plate 4 has a plurality of bridging portions 42. By forming the plurality of slits 41 in the metal plate 4, the bridge portions 42 are formed between the plurality of slits 41.
The plurality of dielectric plates 5 are arranged on the metal plate 4 so as to cover the plurality of slits 41, and each dielectric plate 5 has a rectangular shape in a plan view. The plurality of dielectric plates 5 are arranged in the X-axis direction, but are not arranged in the Y-axis direction. If a plurality of dielectric plates 5 are aligned in the Y-axis direction, the boundaries of the dielectric plates 5 adjacent in the Y-axis direction are disposed in the slit 41, and it is difficult to maintain the vacuum state of the processing chamber 21.
The width WD1 of one dielectric plate 5 in the X-axis direction is greater than the width WD2 of one slit 41 in the X-axis direction so that one dielectric plate 5 can cover more than one slit 41. The width WD1 of the dielectric plate 5 is, for example, 42.5mm to 524.5mm, and the width WD2 of the slit 41 is, for example, 5mm to 30 mm.
In addition, the width WD3 of one dielectric plate 5 in the Y-axis direction is greater than the width WD4 of one slit 41 in the Y-axis direction, so that one dielectric plate 5 can cover more than one slit 41. The width WD3 of the dielectric plate 5 is, for example, 40mm to 70mm, and the width WD4 of the slit 41 is, for example, 30mm to 60 mm. In this case, the width WD3 and the width WD4 are determined such that the width WD3 is greater than the width WD4. Width WD1 is greater than width WD3 and width WD2 is less than width WD4.
Further, when the plasma processing apparatus 1 is viewed in the negative direction of the Z axis, the area of one dielectric plate 5 is smaller than the area of the region where the plurality of slits 41 are formed. The dielectric plate 5 is provided so as to be in contact with the metal plate 4 from the outside of the vacuum vessel 2, and overlaps the metal plate 4. The dielectric plate 5 is provided on the surface of the metal plate 4 on the antenna 6 side so as to block the plurality of slits 41 from the outside of the vacuum chamber 2.
The dielectric plate 5 is entirely made of a dielectric substance, and the dielectric plate 5 has a flat plate shape. The material constituting the dielectric plate 5 may be ceramics such as alumina, silicon carbide, or silicon nitride, inorganic materials such as quartz glass, alkali-free glass, or resin materials such as fluorine resins such as Teflon (registered trademark).
The high-frequency magnetic field generated from the antenna 6 is supplied to the processing chamber 21 through the dielectric plate 5 and the plurality of slits 41. The vacuum state of the processing chamber 21 is maintained by the metal plate 4 closing the opening 23 and the dielectric plate 5 closing the plurality of slits 41.
Structure of adjacent dielectric plate 5
Fig. 3 is an enlarged view of a portion surrounded by a broken line DL shown in fig. 2, and fig. 4 is a cross-sectional view showing the vicinity of a side 51A and a side 52A of the dielectric plate 5A shown in fig. 3. Reference numeral 101 in fig. 4 denotes the vicinity of the side 51A, and reference numeral 102 in fig. 4 denotes the vicinity of the side 52A.
As shown in fig. 2 and 3, the plurality of dielectric plates 5 are disposed on the metal plate 4 such that the sides of the adjacent dielectric plates 5 that are adjacent to each other in opposition are located on the bridge portion 42. The sides of the dielectric plate 5 are rectangular sides of the rectangular dielectric plate 5. As shown in fig. 3, for example, consider a case where dielectric plates 5B, 5A, and 5C as dielectric plates 5 are arranged in this order in the X-axis direction.
The dielectric plate 5A has four sides 51A, 52A, 53A, 54A. Sides 51A and 52A of the four sides are a pair of short sides of the rectangle, and sides 53A and 54A of the four sides are a pair of long sides of the rectangle. The dielectric plate 5B has a side 51B as a short side of the rectangle, and the dielectric plate 5C has a side 52C as a short side of the rectangle.
The sides 51A, 51B, 52A, 52C extend in the Y-axis direction. The sides 53A, 54A extend in the X-axis direction. As shown by reference numeral 101 in fig. 3 and 4, the sides 51A and 51B are located on the bridge portion 42 and supported by the bridge portion 42. The side 51A and the side 51B are adjacent to each other so as to face each other, and are located near the center of the width of the bridge portion 42 in the X-axis direction. The sides 51A and 51B are in contact with each other.
As shown by reference numeral 102 in fig. 3 and 4, the adjacent dielectric plates 5A and 5C are positioned on the bridge portion 42 so that the sides 52A and 52C are adjacent to each other and are supported by the bridge portion 42. A gap SP is formed between the sides 52A and 52C. The dielectric plates 5 are not limited to the dielectric plates 5A and 5C, and a gap SP is formed between one of the short sides of each dielectric plate 5 and the short side of the adjacent dielectric plate 5, and the other short side is connected to the short side of the adjacent dielectric plate 5 different from the adjacent dielectric plate 5.
Thus, even if the dielectric plate 5 swells, the adjacent sides are prevented from strongly contacting each other. Therefore, the dielectric plate 5 is not subjected to a strong stress, and the possibility of breakage of the dielectric plate 5 can be reduced.
The sides of the adjacent dielectric plates 5 that are adjacent to each other in the opposite direction are short sides of the dielectric plates 5. In this case, two sides facing each other among the four sides of the dielectric plate 5 are located on the bridge portion 42. For example, sides 52A and 52C, which are sides of the adjacent dielectric plates 5A and 5C adjacent to each other in opposition, are short sides, and are located on the bridge portion 42.
In this way, when the gap SP is formed between the short sides of the adjacent dielectric plates 5A and 5C facing each other, the gap SP is formed in the bridge portion 42, so that the vacuum state of the processing chamber 21 can be maintained by the dielectric plates 5. In addition, since the temperature of the dielectric plate 5 increases with the generation of plasma, thermal expansion occurs significantly in the dielectric plate 5 in the longitudinal direction compared to the short-side direction, and therefore, the possibility of breakage of the dielectric plate 5 can be effectively reduced.
Further, in the dielectric plate 5, only one short side region of the four sides of the dielectric plate 5 is fixed to the metal plate 4 at the bridge portion 42. The short side region refers to a region near the short side of the surface of the dielectric plate 5 on the metal plate 4 side. For example, only the short side region of the side 51A out of the four sides of the dielectric plate 5A is fixed to the bridge portion 42 by an adhesive or a jig.
When the short side region of the side 51A is fixed to the bridge portion 42 by an adhesive, the adhesive is applied between the short side region of the side 51A and the bridge portion 42. An adhesive is applied between the end face E1 of the dielectric plate 5A that is in contact with the dielectric plate 5B and the end face E2 of the dielectric plate 5B that is in contact with the dielectric plate 5A.
When the short side region of the side 51A is fixed to the bridge portion 42 by a clip, the clip is fixed to the metal plate 4 so that the vicinity of the sides 51A and 51B is pressed against the metal plate 4 by the clip. The short side regions of the sides 52A are not fixedly supported to the bridge portion 42, and the long side regions of the sides 53A, 54A are not fixedly supported to the metal plate 4. The long-side region means a region near the long side in the surface of the dielectric plate 5 on the metal plate 4 side. The short side region of the side 51B of the dielectric plate 5B is also fixed to the bridge portion 42 by an adhesive or a jig.
In this way, only the region of the side other than the one short side of the dielectric plate 5 is not fixedly supported by the metal plate 4. In this way, when the dielectric plate 5 thermally expands, stress applied to the dielectric plate 5 in the longitudinal direction can be reduced, and the possibility of breakage of the dielectric plate 5 can be reduced.
As described above, the plurality of dielectric plates 5 are arranged on the metal plate 4, and the dielectric plate arranged on the metal plate 4 is divided into the plurality of dielectric plates 5. Therefore, the size of the dielectric plate 5 can be reduced as compared with the case where one dielectric plate is fixed to the metal plate 4. Therefore, the possibility of peeling of the dielectric plate 5 from the metal plate 4 due to thermal expansion of the dielectric plate 5 can be reduced and the possibility of breakage of the dielectric plate 5 can be reduced.
In addition, when the plasma processing apparatus 1 is enlarged to enlarge the processing area of the object W1 to be processed by the plasma processing, the magnetic field introduction window 3 is also enlarged, and thus the area where the plurality of slits 41 are formed is enlarged. Therefore, when one dielectric plate 5 is fixed to the metal plate 4, the size of the dielectric plate 5 increases. In contrast, when a plurality of dielectric plates 5 are disposed on the metal plate 4, the dielectric plates 5 are reduced in size, so that the possibility as described above can be effectively reduced.
Further, the use of a plurality of dielectric plates 5 having a small size can reduce the cost of the dielectric plates 5 compared with the use of one dielectric plate 5 having a large size. Since the dielectric plate 5 having a small size is processed, the processing of the dielectric plate 5 such as glass or ceramic which is easily broken is easy.
Regarding the thermal expansion of the dielectric plate 5, consider a case where the dielectric plate 5 is, for example, quartz glass. The coefficient of thermal expansion of the quartz glass is 0.57×10 between 0 ℃ and 500 DEG C -6 and/K. When the length of the dielectric plate 5 in the longitudinal direction was 1000mm and the temperature of the dielectric plate 5 was raised by 500 ℃, the length of the dielectric plate 5 in the longitudinal direction was extended by 0.285mm.
Furthermore, it is not preferable that one of the dielectric plates 5 adjacent to one bridge portion 42 is fixed and the other dielectric plate 5 is not fixedly supported. This is because, when a plurality of dielectric plates 5 are disposed on the metal plate 4, there is a possibility that a defect occurs due to a positional displacement of the dielectric plates 5. Therefore, it is preferable that, as shown in fig. 2, the dielectric plates 5 adjacent on one bridge portion 42 are each fixed and the dielectric plates 5 adjacent on the other bridge portion 42 are each not fixedly supported. Thereby, the structural reliability of the dielectric plate 5 is improved.
The antenna 6 is disposed in a straight line outside the vacuum chamber 2 so as to face the magnetic field introduction window 3. The length of the antenna 6 in the X-axis direction is about 2000mm. The antenna 6 is disposed substantially parallel to the surface of the object W1. When high-frequency power is applied from the high-frequency power supply 7, the antenna 6 generates a high-frequency magnetic field. Thereby, an induced electric field is generated in the space in the processing chamber 21, and an inductively coupled plasma P1 is generated in the space. The holding unit 8 is accommodated in the processing chamber 21, and is a stage for holding the object W1 to be processed.
The high-frequency magnetic field generated from the antenna 6 is supplied to the processing chamber 21 through the plurality of dielectric plates 5 and the plurality of slits 41. The vacuum state of the processing chamber 21 is maintained by the metal plate 4 closing the opening 23 and the dielectric plates 5 closing the slits 41.
[ embodiment 2 ]
Embodiment 2 of the present invention will be described below. For convenience of explanation, members having the same functions as those described in embodiment 1 are given the same reference numerals, and the explanation thereof will not be repeated. Fig. 5 is a diagram showing a configuration of a plasma processing apparatus 1A according to embodiment 2 of the present invention. In fig. 5, the antenna 6 and the high-frequency power supply 7 are omitted. As shown in fig. 5, the plasma processing apparatus 1A is different from the plasma processing apparatus 1 of embodiment 1 in that a buffer material 9 is provided.
The buffer material 9 is provided between the sides of the metal plate 4 adjacent to each other and adjacent to each other, which are fixed to the specific bridge portion 42. For example, the buffer material 9 is provided between the side 51A and the side 51B with respect to the adjacent dielectric plates 5A and 5B. The buffer material 9 is, for example, a resin material such as Teflon (registered trademark).
By providing the buffer material 9 between the sides fixed to the metal plate 4 on the bridge portion 42, even if the dielectric plate 5 expands in the longitudinal direction, the adjacent sides can be prevented from being in strong contact with each other. Therefore, the dielectric plate 5 is not subjected to a strong stress, and the possibility of breakage of the dielectric plate 5 can be reduced.
[ summary ]
The plasma processing apparatus according to aspect 1 of the present invention has a structure including: a vacuum container for accommodating an object to be processed therein; an antenna which is arranged outside the vacuum container and generates a high-frequency magnetic field; and a magnetic field introduction window provided on a wall surface of the vacuum chamber, the magnetic field introduction window being provided with: the dielectric plate is provided with a plurality of slits, a metal plate provided with bridging parts formed among the slits, and a plurality of rectangular dielectric plates arranged in a manner of covering the slits, wherein the dielectric plates are arranged in a manner that sides of the adjacent dielectric plates, which are adjacent to each other in opposite directions, are positioned on the bridging parts.
The plasma processing apparatus according to the aspect 2 of the present invention may be configured such that a gap is formed between the mutually facing adjacent sides according to the aspect 1.
The plasma processing apparatus according to the aspect 3 of the present invention may be configured such that the sides adjacent to each other in opposition are short sides of the dielectric plate according to the aspect 1 or the aspect 2.
The plasma processing apparatus according to claim 4 of the present invention may be configured such that, according to claim 3, only one short side region of the four sides of the dielectric plate is fixed to the metal plate at the bridge portion.
The plasma processing apparatus according to the aspect 5 of the present invention may be configured such that, according to the aspect 4, a buffer material is provided between each of the adjacent sides of the dielectric plates, which are mutually opposite and adjacent, and are fixed to the specific bridge portion.
The present invention is not limited to the above-described embodiments, and various modifications can be made within the scope of the claims, and embodiments obtained by appropriately combining the technical means disclosed in the different embodiments are also included in the technical scope of the present invention.
Description of symbols
1. 1A: plasma processing apparatus
2: vacuum container
3: magnetic field leading-in window
4: metal plate
5. 5A, 5B, 5C: dielectric plate
6: antenna
9: buffer material
22: wall surface
41: slit(s)
42: bridging portion
P1: plasma body
SP: gap of
W1: object to be treated

Claims (5)

1. A plasma processing apparatus, characterized by comprising: a vacuum container for accommodating an object to be processed therein;
an antenna which is arranged outside the vacuum container and generates a high-frequency magnetic field; and
a magnetic field introduction window provided on a wall surface of the vacuum chamber, for introducing the high-frequency magnetic field into the vacuum chamber so as to generate plasma in the vacuum chamber,
the magnetic field introduction window includes:
a metal plate formed with a plurality of slits and having a bridge portion formed between the plurality of slits; and
a plurality of rectangular dielectric plates arranged so as to cover the plurality of slits,
the plurality of dielectric plates are disposed such that the sides of the adjacent dielectric plates, which are adjacent to each other in opposition, are located on the bridge portion.
2. The plasma processing apparatus according to claim 1, wherein a gap is formed between the mutually facing adjoining sides.
3. The plasma processing apparatus according to claim 1 or 2, wherein the sides adjacent to each other in opposition are short sides of the dielectric plate, respectively.
4. The plasma processing apparatus according to claim 3, wherein in the dielectric plate, only one short side region of four sides of the dielectric plate is fixed to the metal plate on the bridge portion.
5. The plasma processing apparatus according to claim 4, wherein a buffer material is provided between each of the adjacent sides of the dielectric plates, which are adjacent to each other, and are fixed to the specific bridge portion.
CN202280022235.3A 2021-08-02 2022-07-15 Plasma processing apparatus Pending CN117044405A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021-126833 2021-08-02
JP2021126833A JP2023021764A (en) 2021-08-02 2021-08-02 Plasma processing apparatus
PCT/JP2022/027817 WO2023013384A1 (en) 2021-08-02 2022-07-15 Plasma processing device

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CN117044405A true CN117044405A (en) 2023-11-10

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CN (1) CN117044405A (en)
TW (1) TWI842027B (en)
WO (1) WO2023013384A1 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4029765B2 (en) * 2003-01-30 2008-01-09 株式会社島津製作所 Plasma processing equipment
JP2010177065A (en) * 2009-01-30 2010-08-12 Tokyo Electron Ltd Microwave plasma treatment device, dielectric plate with slot plate for microwave plasma treatment device, and method of manufacturing the same
JP6190571B2 (en) * 2012-01-17 2017-08-30 東京エレクトロン株式会社 Plasma processing equipment
JP7169885B2 (en) * 2019-01-10 2022-11-11 東京エレクトロン株式会社 Inductively coupled plasma processing equipment
KR20210150561A (en) * 2019-06-05 2021-12-10 닛신덴키 가부시키 가이샤 plasma processing device
JP7303980B2 (en) * 2019-07-09 2023-07-06 日新電機株式会社 Plasma processing equipment

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JP2023021764A (en) 2023-02-14
TWI842027B (en) 2024-05-11
WO2023013384A1 (en) 2023-02-09
KR20230147692A (en) 2023-10-23

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