JP3888120B2 - Plasma processing equipment - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a plasma processing apparatus used for manufacturing semiconductor components, liquid crystal components, optical disk components, electronic component devices, and the like.
[0002]
[Prior art]
In recent years, electronic devices such as semiconductors have been demanded for further performance improvement and cost reduction, and in order to realize these demands, there is a fine processing technology capable of high-precision and high-speed processing that can cease with large integration. It has become essential. As a method corresponding to such a fine processing technique, a processing using a plasma processing method is generally used, and for example, a dry etching method, a sputtering method, a plasma CVD method, or the like is used.
[0003]
Hereinafter, among the plasma processing methods described above, the dry etching method will be particularly described. FIG. 2 is a schematic diagram of a conventional dry etching apparatus, and particularly shows a basic configuration having an inductively coupled plasma source (hereinafter referred to as “ICP”).
[0004]
The operation procedure of the dry etching method using ICP will be described below.
[0005]
First, an electric field is generated by applying high-frequency power from the high-frequency power source 4 a to the antenna coil 2 disposed outside the vacuum vessel 1 via the matching circuit 3. The electric field generated from the antenna coil 2 induces the electric field into the vacuum container 1 by the action effect of the electromagnetic field by the high-frequency introducing member 5. At this time, in the vacuum container 1, gas is introduced from the gas supply device 6, and gas is exhausted by the gas exhaust device 7, and high frequency power is applied from the high frequency power source 4 b to the substrate holder 9 on which the substrate 8 is placed. As a result, the electric field reacts with the gas, and plasma is generated in the vacuum vessel 1. The action of the plasma enables the substrate 8 to be etched. At this time, it is assumed that the housing 10 that supports the antenna coil 2 is grounded. In general, ICP is characterized by being capable of generating / maintaining high-density plasma, and is currently used as a mainstream plasma processing apparatus.
[0006]
In recent years, liquid crystal display panels and semiconductor wafers have a tendency to become larger, and accordingly, the plasma processing apparatus itself has become larger. In the conventional ICP type plasma processing apparatus, the vacuum vessel 1 and the antenna coil are increased. The outer diameter of 2 has exceeded the meter angle. In addition, the power applied to the antenna coil 2 is required to have a high output of 10 kW or more.
[0007]
[Problems to be solved by the invention]
However, in the above-described plasma processing apparatus according to the prior art, when the antenna coil 2 is enlarged, it is difficult not only to secure the shape thereof, but also when the power is applied to the antenna coil 2 at a high output. Charges are accumulated in the insulating member 11 that fixes the housing 2 and the housing 10, which increases the possibility of causing abnormal discharge, and it is difficult to generate stable plasma in the vacuum container 1. It will be.
[0008]
The present invention solves the above-mentioned conventional problems, and an object thereof is to provide a plasma processing apparatus capable of suppressing the occurrence of abnormal discharge while ensuring the shape of an antenna coil.
[0009]
[Means for Solving the Problems]
In order to achieve the above object, the plasma processing apparatus according to claim 1 has an antenna coil outside a vacuum vessel, the antenna coil is supported by a support member, and high frequency power is applied to the antenna coil. A plasma processing apparatus for generating plasma and processing a substrate disposed in a vacuum vessel, wherein the support member is a concave member, and the depth of the recess is subtracted from the height of the support member. The distance is 5 mm or more and 10 mm or less.
[0010]
The plasma processing apparatus according to claim 2 is the plasma processing apparatus according to claim 1, wherein a distance between a surface facing the substrate supporting the antenna coil and an upper portion of the antenna coil is 5 mm or more and 10 mm or less. Features.
[0011]
The plasma processing apparatus according to claim 3 is the plasma processing apparatus according to claim 1 or 2, wherein the support member is made of a material having a relative dielectric constant of 10 or more.
[0012]
The plasma processing apparatus according to claim 4 is the plasma processing apparatus according to claim 3, wherein the material having a relative dielectric constant of 10 or more is any one of ceramic, glass, and fluororesin. .
[0013]
DETAILED DESCRIPTION OF THE INVENTION
FIG. 1 shows the overall configuration of a plasma processing apparatus according to an embodiment of the present invention.
[0014]
The plasma processing apparatus includes a vacuum vessel 1, an antenna coil 2, a matching circuit 3, high-frequency power sources 4a and 4b, a high-frequency introduction member 5, a gas supply device 6, a gas exhaust device 7, a substrate holder 9, a housing 10, and an insulating member. 11 and a support member 12.
[0015]
In the present embodiment, as shown in FIG. 1, the support member 12 that supports the antenna coil 2 is a member having a concave shape made of a material having a relative dielectric constant of 10 or more such as ceramic. The support member 12 has a distance d ₁ (or d ₂ ) of 5 mm between the antenna coil 2 and a part of the casing 10 that is electrically grounded.
[0016]
The positional relationship between the antenna coil 2 and the housing 10 is a distance r ₁ between the housing 10 and the insulating member that supports the antenna coil 2 on the housing 10, and the housing that supports the antenna coil 2 and faces the substrate 8. The distance between the surface of the body 10 and the upper part of the antenna coil 2 is 5 mm for both r ₂ .
[0017]
Hereinafter, an operation procedure when dry etching is performed in the plasma processing apparatus having the above-described configuration and positional relationship will be described.
[0018]
First, an electric field is generated by applying 10 kW of power from the high-frequency power source 4 a to the antenna coil 2 arranged outside the vacuum vessel 1 via the matching circuit 3. The electric field generated from the antenna coil 2 induces the electric field into the vacuum container 1 by the action effect of the electromagnetic field by the high-frequency introducing member 5. At this time, in the vacuum container 1, gas is introduced from the gas supply device 6, and gas is exhausted by the gas exhaust device 7, and high frequency power is applied from the high frequency power source 4 b to the substrate holder 9 on which the substrate 8 is placed. As a result, the electric field reacts with the gas, and plasma is generated in the vacuum vessel 1.
[0019]
As a result of etching with the apparatus configuration as described above, stable plasma can be generated in the vacuum vessel 1 without the shape change or abnormal discharge of the antenna coil 2 as in the prior art.
[0020]
In the present embodiment, the case where the distance between d ₁ and d ₂ is set to 5 mm and the distance between r ₁ and r ₂ is set to 5 mm has been shown. However, good results were obtained. In the present embodiment, ceramic is presented as a material having a relative dielectric constant of 10 or more. However, other materials may be glass or a fluororesin material.
[0021]
As described above, the concave support member for supporting the antenna coil is provided, and the distance between the antenna coil and a part of the casing that is electrically grounded is set to 5 mm or more and 10 mm or less. Plasma can be generated. In addition to the above, the distance between the housing and the member that supports the antenna coil on the housing is 5 mm or more and 10 mm or less, and the distance between the surface facing the substrate of the housing and the upper portion of the antenna coil is 5 mm or more and 10 mm or less. In this case, it is particularly preferable.
[0022]
【The invention's effect】
According to the plasma processing apparatus of the present invention, by providing a concave support member having a relative dielectric constant of 10 or more in the vacuum vessel, it is possible to generate stable plasma in the vacuum vessel.
[Brief description of the drawings]
FIG. 1 is a diagram showing a plasma processing apparatus according to an embodiment of the present invention. FIG. 2 is a diagram showing a plasma processing apparatus in the prior art.
DESCRIPTION OF SYMBOLS 1 Vacuum container 2 Antenna coil 3 Matching circuit 4a, 4b High frequency power supply 5 High frequency introduction member 6 Gas supply apparatus 7 Gas exhaust apparatus 8 Substrate 9 Substrate holding base 10 Case 11 Insulating member 12 Support member

Claims (4)

A vacuum vessel, an antenna coil disposed outside the vacuum vessel, a power source for applying high-frequency power to the antenna coil, a gas supply device for supplying gas to the vacuum vessel, and exhausting gas from the vacuum vessel A plasma processing apparatus comprising a gas exhaust device,
A housing on the opposite side of the vacuum vessel to the antenna coil formed in the dome shape,
The plasma processing apparatus, wherein the antenna coil is supported by a plurality of concave support members protruding from the casing. The plasma processing apparatus according to claim 1, wherein a distance between a bottom surface of a recess formed on a surface of the support member facing the vacuum vessel and the antenna coil is 5 mm or more and 10 mm or less. The plasma processing apparatus according to claim 1, wherein the support member is a material having a relative dielectric constant of 10 or more. 4. The plasma processing apparatus according to claim 3, wherein the material having a relative dielectric constant of 10 or more is any one of ceramic, glass, and fluorine resin.

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