CN117012733B - Power semiconductor packaging structure and manufacturing method - Google Patents
Power semiconductor packaging structure and manufacturing method Download PDFInfo
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- CN117012733B CN117012733B CN202310927646.3A CN202310927646A CN117012733B CN 117012733 B CN117012733 B CN 117012733B CN 202310927646 A CN202310927646 A CN 202310927646A CN 117012733 B CN117012733 B CN 117012733B
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
- H01L21/4882—Assembly of heatsink parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
Abstract
The application relates to the technical field of semiconductor packaging, and discloses a power semiconductor packaging structure and a manufacturing method. The power semiconductor packaging structure comprises a radiating seat, a radiating plate, an insulating plate and a power semiconductor device, wherein the radiating seat is provided with a cooling channel, the radiating plate is welded on one side of the radiating seat, which is provided with the cooling channel, through friction stir, the insulating plate is provided with a plurality of assembly holes, the insulating plate is in plastic package on one side of the radiating plate, which is opposite to the radiating seat, and the power semiconductor device can be in contact with one side of the radiating plate, which is opposite to the radiating seat, through the assembly holes, and is sintered on one side of the radiating plate, which is opposite to the radiating seat. The embodiment of the application can reduce the adverse effect of the processing error of the parts on the production qualification rate and the packaging effect of the packaging structure of the power semiconductor.
Description
Technical Field
The application relates to the technical field of semiconductor packaging, in particular to a power semiconductor packaging structure and a manufacturing method.
Background
Semiconductor packaging structures are commonly used to house and protect semiconductor chips including silicon, silicon carbide (SiC), gallium nitride (GaN), etc. from different semiconductor technologies.
In the prior art, parts of a packaging structure of a power semiconductor are usually assembled by a sealing ring and a screw lock, machining errors of the parts are required to be considered in assembly among the parts, and in general, each part is produced by different manufacturers, the machining errors of the parts are difficult to manage and control, and the production qualification rate and the packaging effect of the packaging structure of the power semiconductor are affected.
Disclosure of Invention
The invention aims to provide a power semiconductor packaging structure and a manufacturing method, and aims to solve the technical problem that the machining errors of parts cause adverse effects on the production qualification rate and the packaging effect of the power semiconductor packaging structure.
The embodiment of the application provides a power semiconductor packaging structure, which comprises:
a cooling seat formed with a cooling channel;
a heat radiation plate which is welded on one side of the heat radiation seat provided with the cooling channel through friction stir;
the insulating plate is provided with a plurality of assembly holes and is in plastic package with one side of the radiating plate, which is opposite to the radiating seat;
the power semiconductor device can be contacted with one side of the heat dissipation plate, which is opposite to the heat dissipation seat, through the assembly holes, and sintered on one side of the heat dissipation plate, which is opposite to the heat dissipation seat.
Further, the heat dissipation seat is provided with two baffles arranged at intervals, the two baffles and the bottom surface of the heat dissipation seat form the cooling channel, and one side, away from the bottom surface of the heat dissipation seat, of the baffles is welded with the heat dissipation plate.
Further, a first bearing part is formed on the welding side of the baffle plate, a second bearing part is formed on the welding side of the heat dissipation seat, and the first bearing part and the second bearing part are mutually embedded.
Further, a plurality of bosses are arranged on one side of the heat dissipation plate, which is close to the insulating plate, the bosses can penetrate through the assembly holes and reach one side of the insulating plate, which is opposite to the heat dissipation seat, and the power semiconductor device is sintered on the bosses.
Further, a radiator is arranged on one side, close to the radiating seat, of the radiating plate, and the radiator extends from the surface of the radiating plate to the inside of the cooling channel.
Further, the assembly holes are arranged in an array, the insulating plate is provided with a plurality of baffle strips, and the baffle strips are arranged between two adjacent assembly holes or between two adjacent assembly holes in two rows.
Further, the insulating plate extends from the heat dissipation plate to the heat dissipation seat and surrounds and wraps the heat dissipation plate.
Further, the number of the assembly holes and the power semiconductor devices is 18.
Further, the heat dissipation seat and the heat dissipation plate are made of aluminum alloy, magnesium alloy or copper alloy.
The embodiment of the application also provides a manufacturing method of the power semiconductor packaging structure, which is used for manufacturing the power semiconductor packaging structure, and comprises the following steps:
assembling the heat radiation plate to one side of the heat radiation seat provided with the cooling channel, and welding the edge of the plate body of the heat radiation plate and the edge of the seat body of the heat radiation seat by a friction stir welding process to form a compact solid-phase welding seam;
fixing the welded radiating seat and the radiating plate on a plastic packaging mold, injecting liquid epoxy resin into the plastic packaging mold, covering one side of the radiating plate, which is back to the radiating seat, with the liquid epoxy resin when the liquid epoxy resin is solidified, forming a dry assembly hole, and completing injection molding of the insulating plate;
and placing the power semiconductor device in the area of the radiating plate in the range of the assembly holes, and sintering the power semiconductor device.
The beneficial effects of this application: the assembly of spare part is realized through friction stir welding and plastic envelope, spare part residual stress is little in friction stir welding process, receive little and warp, the welding seam does not have fusion welding gas pocket defect, welding quality is stable, in the electricity drive use environment, the screw stress relaxation of similar traditional structure and the reliability failure condition such as ageing water leakage of sealing washer can not appear, realize the assembly through plastic envelope technology can reduce assembly, machining error, shaping stable in structure, can reserve the area of contact between more power semiconductor device and the heating panel, promote packaging structure's heat dispersion, reduce the junction temperature of chip, reduce the processing error of spare part and produce qualification rate and the adverse effect that the encapsulation effect caused to power semiconductor's packaging structure.
Drawings
Fig. 1 is an exploded view of a power semiconductor package according to an embodiment.
Fig. 2 is a schematic structural diagram of a power semiconductor package structure according to an embodiment.
Fig. 3 is a schematic structural diagram of a heat sink according to an embodiment.
Fig. 4 is a schematic structural diagram of a heat dissipation plate according to an embodiment.
Fig. 5 is a schematic structural view of an insulating board according to an embodiment.
Fig. 6 is a flowchart of a method for manufacturing a power semiconductor package according to an embodiment.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application will be further described in detail with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the present application.
It should be noted that although functional block division is performed in a device diagram and a logic sequence is shown in a flowchart, in some cases, the steps shown or described may be performed in a different order than the block division in the device, or in the flowchart. The terms first, second and the like in the description and in the claims and in the above-described figures, are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing embodiments of the present application only and is not intended to be limiting of the present application.
The semiconductor chip may be configured with a variety of different device types, such as microprocessors, discrete devices, amplifiers, controllers, sensors, and the like. In a semiconductor package, a semiconductor chip is mounted to a chip pad. Semiconductor packages typically include an electrically insulating encapsulant material, such as plastic, resin, or ceramic, that encapsulates and protects the integrated circuit from moisture and dust particles, and conductive leads are connected to the various terminals of the encapsulated integrated circuit and are accessible from outside the semiconductor package.
In the related art, the parts of the packaging structure of the power semiconductor are assembled by the sealing ring and the screw lock, then the power semiconductor chip is mounted on the chip bonding pad, the manufacturing process is complex, a large amount of manual work or tooling fixture equipment is needed during mass production, the machining errors of the parts, such as the position degree and the warping of the assembly holes of the radiating bottom plate and the cooling water channel, the position degree and the warping of the assembly holes of the insulating sheet and the radiating bottom plate, and the like, are considered during the assembly between the parts, and because each part comes from different manufacturers, strict tolerance management and control are needed to ensure that each part can be normally assembled, so that the manufacturing cost is increased.
Based on this, the embodiment of the application provides a power semiconductor packaging structure and a manufacturing method, and the assembly of parts is realized through friction stir welding and plastic packaging, so that the technical problem that the machining errors of the parts cause adverse effects on the production qualification rate and the packaging effect of the power semiconductor packaging structure is solved.
The power semiconductor package structure and the manufacturing method provided in the embodiments of the present application are specifically described through the following embodiments, and the power semiconductor package structure in the embodiments of the present application is first described.
Referring to fig. 1 to 2, in an embodiment, a power semiconductor package structure includes a heat sink 100, a heat dissipation plate 200, an insulating plate 300, and a power semiconductor device 400.
Wherein, the cooling seat 100 is formed with a cooling channel 110, the heat dissipating plate 200 is friction stir welded to one side of the cooling seat 100 where the cooling channel 110 is formed, the insulating plate 300 is provided with a plurality of assembly holes 310, the insulating plate 300 is plastic-sealed to one side of the heat dissipating plate 200 opposite to the heat dissipating seat 100, the power semiconductor device 400 can contact with one side of the heat dissipating plate 200 opposite to the heat dissipating seat 100 through the assembly holes 310, and the power semiconductor device 400 is sintered to one side of the heat dissipating plate 200 opposite to the heat dissipating seat 100.
Friction stir welding refers to the process of using heat generated by friction between a welding tool rotating at a high speed and a workpiece to locally melt a material to be welded, and when the welding tool moves forward along a welding interface, the plasticized material flows from the front part to the rear part of the welding tool under the action of the rotating friction force of the welding tool, and a compact solid-phase welding seam is formed under the extrusion of the welding tool. Friction stir welding is performed by using friction heat and plastic deformation heat as welding heat sources, extending a stirring pin (a cylinder or other shapes (such as a cylinder with threads) into the joint of a workpiece, and rubbing the welding pin with a welding workpiece material by high-speed rotation of a welding head, so that the temperature of the material at a connecting part is increased and softened, and simultaneously, stirring friction is performed on the material to finish welding.
In the welding process, the heat dissipation seat 100 and the heat dissipation plate 200 are rigidly fixed on the back pad, the welding head rotates at a high speed, the joint of the heat dissipation seat 100 and the heat dissipation plate 200 moves relatively to the heat dissipation seat 100 and the heat dissipation plate 200 along, the protruding section of the welding head stretches into the material for friction and stirring, the shoulder of the welding head generates heat with the surfaces of the heat dissipation seat 100 and the heat dissipation plate 200 in a friction manner, and the shoulder is used for preventing the overflow of the plastic state material and can play a role in removing the surface oxide film.
During welding, the stirring pin stretches into the joint between the heat dissipation seat 100 and the heat dissipation plate 200 while rotating, friction heat between the stirring head and the heat dissipation seat 100 and the heat dissipation plate 200 is rotated, so that the material in front of the welding head is subjected to strong plastic deformation, and then the material with high plastic deformation is gradually deposited on the back of the stirring head along with the movement of the welding head, so that a friction stir welding seam is formed, and friction stir welding of the heat dissipation plate 200 on one side of the heat dissipation seat 100 where the cooling channel 110 is formed is realized.
Plastic packaging is a packaging process for protecting chips or devices by covering a molding compound. Through plastic packaging, the chip, the device and the connecting circuit which are exposed outside originally are protected by an external plastic packaging body, so that the chip, the device and the connecting circuit are prevented from being affected by the external environment, and the failure of the product is avoided.
In the plastic packaging process, electronic silicone gel is coated or encapsulated on the heat dissipation plate 200 and the heat dissipation seat 100 for protection, then the heat dissipation seat 100 and the heat dissipation plate 200 are fixed on a plastic packaging mold, liquid epoxy resin is injected into the plastic packaging mold by an injection molding machine, so that one side of the heat dissipation plate 200, which is away from the heat dissipation seat 100, is covered and dry assembly holes 310 are formed when the liquid epoxy resin is solidified, injection molding of the insulating plate 300 is completed, a plurality of assembly holes 310 are formed in the molded insulating plate 300, and one side of the heat dissipation plate 200, which is away from the heat dissipation seat 100, is covered by the injection molded insulating plate 300.
The main mechanism of sintering is to sinter the original material at high temperature and high pressure, so that the molecular distance of the material is denser, and a firmer chemical bond is formed, and the chemical bond can improve the electrical property, mechanical property and oxidation resistance of the chip. Meanwhile, the pollutants on the surface of the chip can be removed by vacuum sintering, so that the surface quality and transparency of the chip are improved. Sintering can help the chip raw material to realize high-temperature sintering molding, so that the density and hardness of the chip are increased, and the performance and reliability of the chip are improved. In the chip manufacturing process, vacuum sintering may employ various processes including hot press sintering, electron beam sintering, plasma sintering, and the like.
In the sintering process, a proper amount of soldering paste is dripped into the mounting position of the power semiconductor device 400 and the V-shaped grooves of the pins, the power semiconductor device 400 is arranged on the lead frame by adopting an automatic chip feeding cutting machine, a proper amount of soldering paste is respectively arranged on the K area and the G area of the power semiconductor device 400, copper sheets are pasted on the power semiconductor device 400 and the pins of the lead frame, the copper sheets are designed in a tape-type manner, the automatic chip feeding cutting machine is positioned according to positioning holes on two sides of the tape, a vacuum suction nozzle is used for sucking the copper sheets on the power semiconductor device 400 and the lead frame which are already dripped with the soldering paste after punching, protective pin protection copper sheets are arranged on two sides of the tape, the graphite jig which is arranged with the copper sheets and is arranged with the lead frame being baked in advance is arranged in a sintering furnace for sintering, the graphite jig which is arranged with a workpiece is arranged in a furnace chamber with protective and reducing gas, namely nitrogen and hydrogen, so that the processes of volatilization of soldering flux in the solder, melting of the solder, cooling of the workpiece and the like are finished, and the welding of the chip and the copper sheets are finished, the copper sheets are sintered, the soldering flux is removed after the soldering flux residues are cleaned, the sintered, the soldering flux is encapsulated by epoxy resin and the packaging process is finished after other processes are finished.
The specific structure of the power semiconductor package structure according to the embodiment of the present application will be described below.
Referring to fig. 3, in an embodiment, the heat sink 100 is provided with two baffles 120 disposed at intervals, the two baffles 120 and the bottom surface of the heat sink 100 form a cooling channel 110, and one side of the baffles 120 away from the bottom surface of the heat sink 100 is welded to the heat dissipation plate 200. Specifically, the body of the heat dissipation seat 100 and the space between the two baffles 120 form the cooling channel 110, the body of the heat dissipation seat 100 is used as a bottom plate, the two side plates are arranged at intervals along the length direction of the heat dissipation seat 100, as the side plates, after the side plate Dong Ban far away from the bottom surface of the heat dissipation seat 100 is welded with the heat dissipation plate 200, openings are left at the front end and the rear end of the cooling channel 110 for introducing and removing the heat dissipation medium, and the heat dissipation medium contacts with the surface of the side of the heat dissipation plate 200 near the heat dissipation seat 100 when in the cooling channel 110, so that the temperature of the heat dissipation plate 200 is reduced. Wherein the heat-dissipating medium may be cool air or a body of heat-dissipating water (e.g., cooling water).
Referring to fig. 1, 3 and 4, more specifically, a first receiving portion 130 is formed at the welding side of the baffle 120, a second receiving portion 210 is formed at the welding side of the heat sink 200, and the first receiving portion 130 and the second receiving portion 210 are engaged with each other. The baffle 120 and the heat dissipation plate 200 are mutually embedded through the first receiving part 130 and the second receiving part 210, wherein one side of the first receiving part 130, which is close to the center of the heat dissipation seat 100, is inwards recessed to form a slot structure, and one side of the second receiving part 210, which is far away from the center of the heat dissipation plate 200, is inwards recessed to form a slot structure, the slot structure formed by the first receiving part 130 and the slot structure formed by the second receiving part 210 are mutually matched, and after the first receiving part 130 and the second receiving part 210 are mutually abutted, the baffle 120 and the heat dissipation plate 200 are mutually embedded.
Referring to fig. 1, 2 and 4, in one embodiment, a plurality of bosses 220 are disposed on a side of the heat dissipating plate 200 near the insulating plate 300, and the bosses 220 may pass through the assembly holes 310 and reach a side of the insulating plate 300 facing away from the heat sink 100, where the power semiconductor device 400 is sintered to the bosses 220. Specifically, the boss 220 protrudes from a side of the heat dissipation plate 200, which is close to the insulating plate 300, for placing the power semiconductor device 400, and the position and size of the assembly hole 310 formed in the insulating plate 300 are adapted to those of the boss 220, and the boss 220 is not lower than the heat dissipation plate 200 after passing through the assembly hole 310. Wherein, the heat dissipation plate 200 is made of heat dissipation conductors, and the heat dissipation plate 200 and the boss 220 are integrally formed.
Referring to fig. 2 and 4, a radiator 230 is disposed on a side of the heat sink 200 adjacent to the heat sink 100, and the radiator 230 extends from the surface of the heat sink 200 into the cooling channel 110. Specifically, the radiator 230 extends from the surface of the radiator 200 on the side close to the radiator base 100, and is brought into contact with the heat radiation in the cooling water channel to increase the contact area between the radiator 230 and the heat radiation medium, thereby achieving the effect of reducing the problem of the radiator 230.
Referring to fig. 5, in an embodiment, the assembly holes 310 are arranged in an array, the insulating plate 300 is provided with a plurality of bars 320, and the bars 320 are disposed between two adjacent assembly holes 310 or between two adjacent assembly holes 310 in two adjacent columns. Specifically, the assembly holes 310 and the bosses 220 on the heat dissipation plate 200 are arranged in two rows, at least one stop 320 is disposed between two adjacent assembly holes 310 in each row, and at least one stop 320 is disposed between two adjacent assembly holes 310 in each row, so as to isolate the power semiconductor device 400 fixed to the heat dissipation plate 200 through the assembly holes 310 and avoid interference between two adjacent power semiconductors.
Referring to fig. 2, in an embodiment, the insulating plate 300 extends from the heat dissipation plate 200 to the heat dissipation base 100, and surrounds the heat dissipation plate 200.
In one embodiment, the number of the assembly holes 310 and the power semiconductor devices 400 is 18.
In one embodiment, the heat sink 100 and the heat dissipation plate 200 are made of an aluminum alloy, a magnesium alloy, or a copper alloy.
Referring to fig. 6, an embodiment of the present application further provides a method for manufacturing a power semiconductor package structure, where the method for manufacturing the power semiconductor package structure includes:
step S601, assembling a heat radiation plate to one side of a heat radiation seat provided with a cooling channel, and welding the edge of a plate body of the heat radiation plate and the edge of a seat body of the heat radiation seat through a friction stir welding process to form a compact solid-phase welding seam;
step S602, fixing the welded radiating seat and radiating plate to a plastic packaging mold, injecting liquid epoxy resin into the plastic packaging mold, covering one side of the radiating plate, which is opposite to the radiating seat, with the liquid epoxy resin when the liquid epoxy resin is solidified, forming a dry assembly hole, and completing injection molding of the insulating plate;
in step S603, the power semiconductor device is placed in the area of the heat dissipation plate within the range of the mounting hole, and the power semiconductor device is subjected to sintering treatment.
The specific implementation of the method for manufacturing the power semiconductor package structure is basically the same as the specific embodiment of the power semiconductor package structure, and will not be described herein.
In summary, the power semiconductor packaging structure and the manufacturing method provided by the embodiment of the application realize the assembly of parts through friction stir welding and plastic packaging, the residual stress of the parts in the friction stir welding process is small, the shrinkage and the deformation are small, welding seams have no fusion welding air hole defects, the welding quality is stable, the reliability failure conditions such as screw stress relaxation and sealing ring aging water leakage similar to the traditional structure can not occur in an electric driving environment, the assembly and processing errors can be reduced through the plastic packaging process, the forming structure is stable, the contact area between more power semiconductor devices and the heat dissipation plate can be reserved, the heat dissipation performance of the packaging structure is improved, the junction temperature of a chip is reduced, and the adverse effect of the processing errors of the parts on the production qualification rate and the packaging effect of the packaging structure of the power semiconductor is reduced.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
In this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a list of elements is included, and may include other elements not expressly listed.
The foregoing is merely specific embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily think about changes or substitutions within the technical scope of the present application, and the changes and substitutions are intended to be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (9)
1. A power semiconductor package structure, comprising:
a cooling seat formed with a cooling channel;
a heat radiation plate which is welded on one side of the heat radiation seat provided with the cooling channel through friction stir;
the insulating plate is provided with a plurality of assembly holes and is in plastic package with one side of the radiating plate, which is opposite to the radiating seat;
the power semiconductor device can be contacted with one side of the radiating plate, which is opposite to the radiating seat, through the assembly hole and sintered on one side of the radiating plate, which is opposite to the radiating seat;
the cooling seat is provided with two baffles arranged at intervals, the two baffles and the bottom surface of the cooling seat form the cooling channel, and one side of the baffle, which is far away from the bottom surface of the cooling seat, is welded with the cooling plate.
2. The power semiconductor package according to claim 1, wherein a first receiving portion is formed on a soldering side of the baffle plate, a second receiving portion is formed on a soldering side of the heat sink, and the first receiving portion and the second receiving portion are fitted to each other.
3. The power semiconductor package according to claim 1, wherein a plurality of bosses are provided on a side of the heat dissipation plate adjacent to the insulating plate, the bosses can pass through the assembly holes and reach a side of the insulating plate opposite to the heat dissipation base, and the power semiconductor device is sintered on the bosses.
4. The power semiconductor package according to claim 1, wherein a radiator is disposed on a side of the heat dissipation plate adjacent to the heat dissipation base, and the radiator extends from a surface of the heat dissipation plate into the cooling channel.
5. The power semiconductor package according to claim 1, wherein the assembly holes are arranged in an array, the insulating plate is provided with a plurality of bars, and the bars are disposed between two adjacent assembly holes or between two adjacent assembly holes in two adjacent columns.
6. The power semiconductor package according to claim 1, wherein the insulating plate extends from the heat dissipation plate to the heat dissipation base, surrounding the heat dissipation plate.
7. The power semiconductor package according to claim 1, wherein the number of the fitting holes and the power semiconductor devices is 18.
8. The power semiconductor package according to claim 1, wherein the heat sink and the heat dissipation plate are made of an aluminum alloy, a magnesium alloy, or a copper alloy.
9. A manufacturing method of the power semiconductor package structure for manufacturing the power semiconductor package structure according to any one of claims 1 to 8, characterized by comprising:
assembling the heat radiation plate to one side of the heat radiation seat provided with the cooling channel, and welding the edge of the plate body of the heat radiation plate and the edge of the seat body of the heat radiation seat by a friction stir welding process to form a compact solid-phase welding seam;
fixing the welded radiating seat and the radiating plate on a plastic packaging mold, injecting liquid epoxy resin into the plastic packaging mold, covering one side of the radiating plate, which is back to the radiating seat, with the liquid epoxy resin when the liquid epoxy resin is solidified, forming a dry assembly hole, and completing injection molding of the insulating plate;
and placing the power semiconductor device in the area of the radiating plate in the range of the assembly holes, and sintering the power semiconductor device.
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|---|---|---|---|---|
| KR19980078029A (en) * | 1997-04-24 | 1998-11-16 | 곽철우 | Heat sink for semiconductor package and semiconductor package process using same |
| CN207637782U (en) * | 2017-12-12 | 2018-07-20 | 杰群电子科技（东莞）有限公司 | A kind of power semiconductor packaging structure |
| DE202019106541U1 (en) * | 2019-11-25 | 2019-12-05 | Zf Friedrichshafen Ag | Power module with packaged power semiconductors for controllable electrical power supply to a consumer |
| WO2021105028A1 (en) * | 2019-11-25 | 2021-06-03 | Zf Friedrichshafen Ag | Power module with housed power semiconductors for controllable electrical power supply of a consumer, and method for producing same |
| CN115084058A (en) * | 2022-08-16 | 2022-09-20 | 杭州飞仕得科技有限公司 | Power semiconductor device packaging structure |
| CN115910950A (en) * | 2022-11-10 | 2023-04-04 | 北京智慧能源研究院 | Power semiconductor device packaging structure and power semiconductor device module |
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2023
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR19980078029A (en) * | 1997-04-24 | 1998-11-16 | 곽철우 | Heat sink for semiconductor package and semiconductor package process using same |
| CN207637782U (en) * | 2017-12-12 | 2018-07-20 | 杰群电子科技（东莞）有限公司 | A kind of power semiconductor packaging structure |
| DE202019106541U1 (en) * | 2019-11-25 | 2019-12-05 | Zf Friedrichshafen Ag | Power module with packaged power semiconductors for controllable electrical power supply to a consumer |
| WO2021105028A1 (en) * | 2019-11-25 | 2021-06-03 | Zf Friedrichshafen Ag | Power module with housed power semiconductors for controllable electrical power supply of a consumer, and method for producing same |
| CN115084058A (en) * | 2022-08-16 | 2022-09-20 | 杭州飞仕得科技有限公司 | Power semiconductor device packaging structure |
| CN115910950A (en) * | 2022-11-10 | 2023-04-04 | 北京智慧能源研究院 | Power semiconductor device packaging structure and power semiconductor device module |
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| CN117012733A (en) | 2023-11-07 |
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