CN116979367A - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device Download PDF

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Publication number
CN116979367A
CN116979367A CN202310474219.4A CN202310474219A CN116979367A CN 116979367 A CN116979367 A CN 116979367A CN 202310474219 A CN202310474219 A CN 202310474219A CN 116979367 A CN116979367 A CN 116979367A
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China
Prior art keywords
opening
plan
semiconductor light
view
emitting element
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CN202310474219.4A
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Chinese (zh)
Inventor
细川泰伸
大塚匠
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Nichia Corp
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Nichia Corp
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Priority claimed from JP2023044471A external-priority patent/JP7513924B2/en
Application filed by Nichia Corp filed Critical Nichia Corp
Publication of CN116979367A publication Critical patent/CN116979367A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02461—Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)

Abstract

A semiconductor light-emitting element is provided in which improvement of light-emitting efficiency and heat dissipation is achieved. The semiconductor light emitting element (1) of the present disclosure is provided with: a semiconductor structure (10) has an n-side semiconductor layer (11), a light-emitting layer (12) disposed on a first region, and a p-side semiconductor layer (13) disposed on the light-emitting layer (12), wherein the n-side semiconductor layer (11) has a first region (R1) in plan view, a second region (R2) located on the outer periphery of the first region (R1), and a plurality of third regions (R3) surrounded by the first region (R1); a first insulating film (20) which is disposed on the semiconductor structure (10) and has a plurality of first openings (h 1) disposed on the third region (R3) and a plurality of second openings (h 2) disposed on the p-side semiconductor layer (13); an n-side electrode (40) disposed on the first insulating film (20) and electrically connected to the n-side semiconductor layer (11) at a plurality of first openings (h 1); an n-pad electrode (60) disposed in the second region (R2) and electrically connected to the n-side electrode (40); a second insulating film (30) which is disposed on the first insulating film (20) and has a plurality of third openings (h 3) which are disposed at positions overlapping the plurality of second openings (h 2); and a p-pad electrode (70) disposed on the second insulating film (30), wherein the p-side semiconductor layer (13) is electrically connected to the plurality of third openings (h 3), the p-pad electrode (70) covers the first region (R1) and the third region (R3) in a plan view, and the plurality of first openings (h 1) are disposed around the third openings (h 3) in a plan view.

Description

Semiconductor light emitting device
Technical Field
The disclosed invention relates to a semiconductor light emitting element.
Background
Patent document 1 discloses a light-emitting element including: a semiconductor lamination section in which a first semiconductor layer, an active layer, and a second semiconductor layer are laminated; an n-electrode electrically connected to the first semiconductor layer; a p-electrode electrically connected to the second semiconductor layer; and an n-electrode. In such a light-emitting element, a first plated electrode formed on a p-electrode is proposed to cover a conductive portion between a first semiconductor layer and an n-electrode.
Prior art literature
Patent literature
Patent document 1: japanese patent No. 5985782
Disclosure of Invention
Problems to be solved by the invention
In the semiconductor light-emitting element disclosed in patent document 1, further improvement in light-emitting efficiency and heat dissipation is required.
The present disclosure is directed to providing a semiconductor light emitting element having high light emitting efficiency and high heat dissipation.
Means for solving the problems
In order to achieve the above object, a semiconductor light emitting element of the present disclosure includes:
a semiconductor structure having: an n-side semiconductor layer having a first region, a second region located on an outer periphery of the first region, and a plurality of third regions surrounded by the first region in a plan view; a light-emitting layer disposed on the first region; and a p-side semiconductor layer disposed on the light-emitting layer;
A first insulating film disposed on the semiconductor structure and having a plurality of first openings disposed in the third region and a plurality of second openings disposed in the p-side semiconductor layer;
an n-side electrode disposed on the first insulating film and electrically connected to the n-side semiconductor layer at the plurality of first openings;
an n-pad electrode disposed in the second region and electrically connected to the n-side electrode;
a second insulating film disposed on the first insulating film and having a plurality of third openings disposed at positions overlapping the plurality of second openings; and
a p-pad electrode disposed on the second insulating film and electrically connected to the p-side semiconductor layer at the plurality of third openings,
the p-pad electrode covers the first region and the third region in a plan view,
the plurality of first openings are arranged around the third opening in a plan view. .
Effects of the invention
According to the semiconductor light emitting element of the present disclosure configured as described above, improvement in light emitting efficiency and heat dissipation can be achieved.
Drawings
Fig. 1 is a top view of a semiconductor light emitting element of an embodiment of the present disclosure.
Fig. 2 is a cross-sectional view of a semiconductor light emitting element of an embodiment of the present disclosure.
Fig. 3 is a plan view of the p-side electrode of the semiconductor light emitting element.
Fig. 4 is a plan view of an n-side contact electrode of the semiconductor light emitting element.
Fig. 5 is a plan view of an n-side wiring portion of the semiconductor light emitting element.
Fig. 6 is a top view of the first insulating film of the semiconductor light emitting element.
Fig. 7 is a plan view of the second insulating film of the semiconductor light emitting element.
Fig. 8A is a plan view of a semiconductor light emitting element according to modification 1A of the embodiment.
Fig. 8B is a plan view of the semiconductor light emitting element of modification 1B of the embodiment.
Fig. 9 is a plan view of a semiconductor light-emitting element according to modification 2 of the embodiment.
Fig. 10 is a plan view of a semiconductor light-emitting element according to modification 3 of the embodiment.
Fig. 11 is a plan view of a semiconductor light-emitting element according to modification 4 of the embodiment.
Fig. 12 is a plan view of a semiconductor light-emitting element according to modification 5 of the embodiment.
Fig. 13 is a flowchart showing a manufacturing flow of the semiconductor light emitting element according to the embodiment of the present disclosure.
Fig. 14A is a top view of the semiconductor light emitting element of example 1 used in the first verification test and the second verification test.
Fig. 14B is a top view of the semiconductor light emitting element of example 2 used in the first verification test and the second verification test.
Fig. 14C is a top view of the semiconductor light emitting element of example 3 used for the first verification test and the second verification test.
Fig. 14D is a top view of the semiconductor light emitting element of example 4 used in the first verification test and the second verification test.
Fig. 14E is a top view of the semiconductor light-emitting element of example 5 used in the first verification test.
Fig. 14F is a top view of the semiconductor light-emitting element of example 6 used in the first verification test.
Fig. 14G is a top view of the semiconductor light-emitting element of example 7 used in the first verification test.
Fig. 14H is a top view of the semiconductor light emitting element of the comparative example used in the first verification test.
Fig. 15 is a graph showing a relationship between the number of n-side conductive portions and the relative output of the semiconductor light emitting element in the examples and the comparative examples as a first verification test.
Fig. 16 is a graph showing the relationship between the number of n-side conductive portions and the forward voltage Vf of the semiconductor light-emitting element in the examples and the comparative examples as a first verification test.
Fig. 17 is a graph showing a relationship between the number of n-side conductive portions and the output of the semiconductor light emitting element in the embodiment as a second verification test.
Fig. 18 is a graph showing a relationship between the number of n-side conductive portions and the forward voltage Vf of the semiconductor light-emitting element in the embodiment as a second verification test.
Detailed Description
As shown in fig. 1 and 2, the semiconductor light emitting element 1 of the present disclosure includes a semiconductor structure 10, first and second insulating films 20 and 30, an n-side electrode 40, an n-pad electrode 60, and a p-pad electrode 70.
The semiconductor structure 10 includes an n-side semiconductor layer 11, a light-emitting layer 12, and a p-side semiconductor layer 13.
The n-side semiconductor layer 11 includes a first region R1, a second region R2 located on the outer periphery of the first region R1, and a plurality of third regions R3 surrounded by the first region R1.
The first insulating film 20 includes a plurality of first openings h1 arranged in the third region R3 and a plurality of second openings h2 arranged in the p-side semiconductor layer 13.
The second insulating film 30 includes a plurality of third openings h3 arranged at positions overlapping the plurality of second openings h2.
The n-side electrode 40 is electrically connected to the n-side semiconductor layer 11 at the plurality of first openings h 1. The n-side electrode 40 is electrically connected to the n-pad electrode 60. The n-side semiconductor layer 11 and the n-pad electrode 60 are electrically connected via the n-side electrode 40.
The p-pad electrode 70 is disposed on the second insulating film 30 and electrically connected to the p-side semiconductor layer 13 at the plurality of third openings h3.
The p-pad electrode 70 covers the first region R1 and the third region R3 in plan view, and the plurality of first openings h1 are arranged around the third opening h 3.
According to the above configuration, the p-pad electrode 70 covers the first region R1 and the third region R3 in a plan view, and therefore, heat generated in the semiconductor light emitting element 1 can be dissipated by the p-pad electrode 70. The plurality of first openings h1 are arranged around the third opening h3 in a plan view. Therefore, when a current flows through the semiconductor light emitting element 1, electrons supplied from the n-side electrode 40 through the first opening h1 tend to move toward the third opening h3 (p-side semiconductor layer) disposed around. This can improve the light emission efficiency of the semiconductor light emitting element 1.
As described above, the semiconductor light-emitting element of the present disclosure can improve light-emitting efficiency, and appropriately dissipate heat generated in association with light emission of the semiconductor light-emitting element.
Hereinafter, more specific embodiments will be described in detail. Fig. 1 is a top view of a semiconductor light emitting element of an embodiment of the present disclosure. Fig. 2 is a cross-sectional view of a semiconductor light emitting element of an embodiment of the present disclosure. Fig. 3 is a plan view of the p-side electrode of the semiconductor light emitting element. Fig. 4 is a plan view of an n-side contact electrode of the semiconductor light emitting element. Fig. 5 is a plan view of an n-side wiring portion of the semiconductor light emitting element. Fig. 6 is a top view of the first insulating film of the semiconductor light emitting element. Fig. 7 is a plan view of the second insulating film of the semiconductor light emitting element. First, a semiconductor light-emitting element according to an embodiment of the present disclosure will be described with reference to fig. 1 to 7.
Embodiments of semiconductor light-emitting element
The semiconductor light emitting element 1 of the first embodiment of the present disclosure includes a semiconductor structure 10, an n-side electrode 40, an n-pad electrode 60, a first insulating film 20, a second insulating film 30, a p-side electrode 50, and a p-pad electrode 70.
1. Semiconductor structure
The semiconductor structure 10 includes an n-side semiconductor layer 11, a light-emitting layer 12, and a p-side semiconductor layer 13 on a substrate 14. The semiconductor structure 10 is rectangular in plan view, for example. As an example of the semiconductor structure 10, in can be used X Al Y Ga 1－X－Y N (0.ltoreq.X, 0.ltoreq.Y, X+Y.ltoreq.1) and the like. Further, examples of the nitride semiconductor include GaN, inGaN, alGaN, alInGaN and the like. The light-emitting layer 12 may be, for example, a quantum well structure including a plurality of well layers and a plurality of barrier layers. The semiconductor structure 10 emits ultraviolet light (for example, B wave having a peak wavelength of 280nm to 315nm, or C wave having a peak wavelength of 100nm to 280 nm) as an example. In particular, when light having the wavelength of the B wave or the C wave is emitted, the light-emitting layer 12 preferably includes an AlGaN layer having an Al composition ratio of 40% to 60%. The light-emitting layer 12 includes, for example, a well layer and a barrier layer each composed of an AlGaN layer having an Al composition ratio of 40% to 60%.
The n-side semiconductor layer 11 includes a first region R1 in which the light-emitting layer 12 and the p-side semiconductor layer 13 are disposed, and a second region R2 and a third region R3 in which the light-emitting layer 12 and the p-side semiconductor layer 13 are not disposed (see fig. 1 and 2).
As shown in fig. 1, the first region R1 is located at the center of the semiconductor structure 10 in a plan view, and has a continuous plane. The first region R1 has an outline of, for example, a substantially octagonal shape. By forming the outer shape of the first region R1 into a substantially octagonal shape, the light-emitting layer 12 located in the vicinity of the position where the laser beam is irradiated in the step of cutting the substrate 14 described later can be reduced as compared with the case where the outer shape of the first region R1 is a substantially quadrangular shape. This can reduce degradation of the light-emitting layer 12 caused by the laser beam.
The second region R2 is located on the outer periphery of the first region R1, and includes a region where the n-pad electrode 60 is disposed. As shown in fig. 1 and 4, the second region R2 is disposed along the outer periphery of the semiconductor structure 10. In addition, the second region R2 surrounds the first region R1. The second region R2 is not limited to this configuration. The second region R2 may be disposed, for example, not so as to surround the first region R1, but only at four corners of the semiconductor structure 10, or at least at one corner. Here, as shown in fig. 2, the light-emitting layer 12 and the p-side semiconductor layer 13 are not disposed in the second region R2. Therefore, compared with the case where the light-emitting layer 12 and the p-side semiconductor layer 13 are disposed in the second region R2, light absorption of the light-emitting layer 12 and the p-side semiconductor layer 13 in the second region R2 can be reduced.
The third region R3 is a region for electrically connecting the n-side electrode 40 and the n-side semiconductor layer 11. The third region R3 corresponds to an exposed position of the n-side semiconductor layer 11. The plurality of third regions R3 are arranged in the semiconductor structure 10. The plurality of third regions R3 are surrounded by the first region R1. The plurality of third regions R3 are arranged in the continuous first region in a plan view of the semiconductor structure 10. The plurality of third regions R3 are arranged in an island shape. In the present specification, "island shape" means a state where each of the islands is separated and discontinuous in a plan view.
P-side electrode
The p-side electrode 50 is electrically connected to the p-side semiconductor layer 13 located in the first region R1. The p-side electrode 50 is preferably made of a metal that reflects light from the light-emitting layer 12 toward the n-side semiconductor layer 11. For example, a metal having a reflectance of 50% or more, preferably 60% or more, with respect to the peak wavelength of light from the light-emitting layer 12 is preferably used as the p-side electrode 50, and metals such as Rh and Ru are preferably used. The p-side electrode 50 may have a laminated structure in which a plurality of metal layers are laminated. The p-side electrode 50 may be a laminated structure in which, for example, a Ru layer, a Ni layer, and an Au layer are laminated in this order from the semiconductor structure 10 side. The p-side electrode 50 may be a laminated structure in which, for example, a Ti layer, an Rh layer, and a Ti layer are laminated in this order from the semiconductor structure 10 side. The thickness of the p-side electrode 50 may be 300nm to 1500nm, for example. The p-side electrode 50 of the p-side electrode 50 is formed on substantially the entire upper surface of the p-side semiconductor layer 13. The p-side electrode 50 has a substantially octagonal outer shape in a plan view. The p-side electrode 50 is not disposed in the second region R2 and the third region R3.
N-side electrode
As shown in fig. 2, the n-side electrode 40 includes an n-side electrode 41 and an n-side wiring portion 42. The n-side contact electrode 41 is in contact with the n-side semiconductor layer 11, and is electrically connected to the n-side semiconductor layer 11. The n-side wiring portion 42 is in contact with the n-side contact electrode 41, and is electrically connected to the n-side semiconductor layer 11 via the n-side contact electrode 41. The n-side contact electrode 41 is separated from the p-side electrode 50 in a plan view of the semiconductor light emitting element 1. In a plan view of the semiconductor light emitting element 1, a part of the n-side wiring portion 42 overlaps a part of the p-side electrode 50.
For example, a metal such as Ti, al, ni, ta, rh, ru, si, pt or an alloy containing these metals as a main component can be used for the n-side contact electrode 41. The n-side contact electrode 41 may be a laminated structure in which a Ti layer, an Al alloy layer, a Ta layer, a Ru layer, and a Ti layer are laminated in this order from the n-side semiconductor layer 11 side. The thickness of the n-side contact electrode 41 may be, for example, 500nm to 800 nm. As shown in fig. 4, the n-side contact electrode 41 is disposed in the second region R2 and the third region R3. The n-side contact electrode 41 includes a contact portion 41p, an n-side outer Zhou Daotong portion 41g, and a plurality of n-side conductive portions 41d. The contact portion 41p is disposed in the second region R2 located at the corner of the semiconductor structure 10, and contacts the n-side semiconductor layer 11. The contact portion 41p is arranged at a position corresponding to an n-pad electrode 60 described later. The n-side outer Zhou Daotong parts 41g are in contact with the n-side semiconductor layer 11 in the second region R2 which does not overlap with the n-pad electrode 60 in a plan view of the second region R2. The plurality of n-side conductive portions 41d are disposed in the third region R3 and contact the n-side semiconductor layer 11. The plurality of n-side conductive portions 41d are arranged in an island shape in a plan view. The plurality of n-side conductive portions 41d contact the n-side semiconductor layer 11 at a first opening h1 described later. The distance between the center points of two adjacent n-side conduction portions 41d is preferably 45 μm or more and 100 μm or less, more preferably 45 μm or more and 80 μm or less, in plan view. Here, the center point of the n-side conduction portion 41d is the center point of the shape of the n-side conduction portion 41d in plan view. For example, in the n-side conduction portion 41d having a circular shape in a plan view shown in fig. 4, the center of the circle is the center point of the n-side conduction portion 41d. The n-side outer Zhou Daotong portions 41g can be disposed outside the outer edge of the p-pad electrode 70, which will be described later, in a plan view.
The n-side wiring portion 42 can use the same metal as the n-side contact electrode 41 described above. The n-side wiring portion 42 may be a laminated structure in which a Ti layer, an Al alloy layer, and a Ti layer are laminated in this order from the semiconductor structure 10 side. The thickness of the n-side wiring portion 42 may be, for example, 400nm to 600 nm. As shown in fig. 4 and 5, the n-side wiring portion 42 electrically connects the n-side outer portion Zhou Daotong portion 41g, the plurality of contact portions 41p, and the plurality of n-side conductive portions 41d disposed in the third region R3, which are disposed in the second region R2.
The n-side wiring portion 42 continuously covers the semiconductor structure 10 in a plan view. In other words, the n-side wiring portion 42 half covers the entire conductor structure 10. As shown in fig. 5, the n-side wiring portion 42 includes a plurality of openings. The plurality of openings of the n-side wiring portion 42 are arranged at positions overlapping with second openings h2 of the first insulating film 20 described later. In the cross section, the n-side wiring portion 42 covers a side surface of the semiconductor structure 10 and a part of the upper surface of the semiconductor structure 10. As described above, the n-side wiring portion 42 covers the semiconductor structure 10 in a plan view, and light from the light-emitting layer 12 toward the n-side wiring portion 42 can be reflected toward the substrate 14.
4. First insulating film
As shown in fig. 2, the first insulating film 20 is disposed on the semiconductor structure 10. In the cross section, the first insulating film 20 is disposed between the n-side electrode 41 and the p-side electrode 50, and electrically insulates the n-side electrode 41 from the p-side electrode 50. The first insulating film 20 is disposed between the n-side wiring portion 42 and the p-side electrode 50, and electrically insulates the n-side wiring portion 42 from the p-side electrode 50. The first insulating film 20 includes a plurality of first openings h1 for electrically connecting the n-side wiring portion 42 and the n-side electrode 41, and a plurality of second openings h2 for electrically connecting the p-side electrode 50 and the p-pad electrode 70. The first insulating film 20 includes a plurality of first openings h1 arranged in the third region R3 and a plurality of second openings h2 arranged in the first region R1.
As shown in fig. 1, in the semiconductor light emitting element 1 of the first embodiment of the present disclosure, a plurality of first openings h1 are arranged around the second opening h2. For example, four first openings h1 are arranged with respect to one second opening h2. The first opening h1 is disposed, for example, between two adjacent second openings h2 in a direction parallel to the diagonal line of the substrate 14. The first opening h1 and the second opening h2 are arranged in a staggered manner in a plan view. In the present specification, the "staggered shape" refers to a state in which the plurality of first openings h1 and the plurality of second openings h2 are arranged differently from each other. The first opening h1 may be disposed between two adjacent second openings h2 in a direction parallel to the 1-side of the substrate 14. The plurality of second openings h2 may be disposed around the first opening h 1. The plurality of first openings h1 and the plurality of second openings h2 are preferably arranged at substantially equal intervals in a plan view. This can improve the uniformity of the distribution of the light emission intensity.
As shown in fig. 2 and 6, the first insulating film 20 includes a plurality of openings A1 for electrically connecting the n-side electrodes 41 and the n-side wiring portions 42. The first insulating film 20 can use SiO 2 Or SiN. The thickness of the first insulating film 20 is, for example, 500nm or more, preferably 500nm or more and 1000nm or less. The thickness of the first insulating film 20 may also be locally different. For example, the thickness of the first insulating film 20 disposed on the p-side electrode 50 may be different from the thickness of the first insulating film 20 disposed on the n-side contact electrode 41.
5. Second insulating film
As shown in fig. 2, the second insulating film 30 is disposed on the semiconductor construct 10. The second insulating film 30 is disposed between the n-side wiring portion 42 and the p-pad electrode 70, and electrically insulates the n-side wiring portion 42 from the p-pad electrode 70. The second insulating film 30 is disposed between the n-pad electrode 60 and the p-pad electrode 70, and electrically insulates the n-pad electrode 60 from the p-pad electrode 70. The second insulating film 30 includes third openings h3 arranged corresponding to the respective positions overlapping the plurality of second openings h2 of the first insulating film 20.
Since the plurality of first openings h1 are arranged around the third opening h3 in a plan view, the portion where the n-side wiring portion 42 and the n-side electrode 41 are electrically connected and the portion where the p-side electrode 50 and the p-pad electrode 70 are electrically connected can be arranged closer to each other. Therefore, the current path between the n-side semiconductor layer 11 and the p-side semiconductor layer 13 can be shortened, and the area where current is easily concentrated and the light emission intensity is high can be increased, so that the semiconductor structure 10 can be made to emit light more effectively. In the semiconductor structure 10, if the exposure of the n-side semiconductor layer 11 is increased, the area of the light-emitting layer 12 is reduced. For example, the area where the n-side semiconductor layer 11 is exposed is increased in number by disposing a plurality of third regions R3 in a plan view. By reducing the distance between the first opening h1 and the third opening h3, the light-emitting efficiency of the semiconductor construct 10 can be maintained even in the case of reducing the area of the light-emitting layer 12. In addition, the semiconductor structure 10 having the light-emitting layer 12 that emits ultraviolet light may use a semiconductor layer containing Al, and current tends to be less likely to spread in the planar direction of the semiconductor structure 10. Accordingly, the present disclosure is more effective in the case of using the semiconductor construct 10 having the light emitting layer 12 that emits ultraviolet light.
It is preferable that the number of the second openings h2 is the same as the number of the third openings h 3. The number of the second openings h2 may be different from the number of the third openings h 3. In the semiconductor structure 10, when the second insulating film 30 has the third opening h3, the first insulating film 20 has the second opening h2 corresponding to the third opening h 3. The p-side electrode 50 and the p-pad electrode 70 are electrically connected at the third opening h 3. When the third opening h3 and the second opening h2 are formed in a circular shape in a plan view, the diameter of the third opening h3 may be larger than the diameter of the second opening h2. According to this configuration, when the p-pad electrode 70 and the p-side electrode 50 are electrically connected, the p-pad electrode 70 can be appropriately arranged in the opening where the second opening h2 and the third opening h3 are continuous.
As shown in fig. 2 and 7, the second insulating film 30 includes a plurality of openings A2 for electrically connecting the n-pad electrode 60 and the n-side wiring portion 42. The second insulating film 30 can use SiO 2 Or SiN. The thickness of the second insulating film 30 is, for example, 500nm or more, preferably 500nm or more and 1000nm or less. The thickness of the second insulating film 30 may also be locally different. For example, the thickness of the second insulating film 30 disposed on the first insulating film 20 may be different from the thickness of the second insulating film 30 disposed on the n-side wiring portion 42.
6.p pad electrode 70
As shown in fig. 2, the p-pad electrode 70 is electrically connected to the p-side electrode 50 at the third opening h3 of the second insulating film 30 and the second opening h2 of the first insulating film 20. The p-pad electrode 70 can use the same metal as the n-side contact electrode 41 described above. The p-pad electrode 70 may be a laminated structure in which a Ti layer, a Pt layer, and an Au layer are laminated in this order from the semiconductor structure 10 side. The thickness of the p-pad electrode 70 is, for example, 800nm to 1000 nm.
The p-pad electrode 70 covers the first region R1 and the third region R3 in a plan view. The p-pad electrode 70 covers at least the light emitting layer 12 disposed on the first region R1. Accordingly, heat generated by the light emission of the semiconductor construct 10 can be dissipated by the p-pad electrode 70 covering the light emitting layer 12.
From the standpoint of dissipating heat generated in the light-emitting layer 12, it is preferable that the area of the p-pad electrode 70 is larger than the area of the light-emitting layer 12 in a plan view. This allows heat generated in the light-emitting layer 12 to be efficiently dissipated via the p-pad electrode 70.
The outer edge of the p-pad electrode 70 preferably coincides with the outer edge of the p-side electrode 50 in cross section or is located outside the outer edge of the p-side electrode 50. This allows heat generated in the light-emitting layer 12 to be efficiently dissipated via the p-side electrode 50 and the p-pad electrode 70.
The p-pad electrode 70 is preferably substantially octagonal in plan view. This enables the p-side electrode 50 disposed in the first region R1 to be electrically connected appropriately. In addition, the shape of the p-side electrode 50 is preferably a substantially octagonal shape corresponding to the shape of the p-pad electrode 70 in plan view.
The semiconductor light emitting element 1 may further include a bonding member 80. The bonding member 80 is disposed on the n-pad electrode 60 and the p-pad electrode 70. As shown in fig. 2, the joining member 80 may be disposed on the first region R1. If the bonding member 80 is disposed on the p-pad electrode 70 located above the first opening h1, a load is applied to the second insulating film 30 at the time of bonding, and cracks or the like are generated in the second insulating film 30, so that there is a possibility that the p-pad electrode 70 and the n-side electrode 40 may be shorted. In order to avoid such a short circuit, the bonding member 80 is preferably disposed on the p-pad electrode 70 located above the third opening h 3.
N pad electrode 60
The n-pad electrode 60 is disposed outside the outer edge of the p-pad electrode 70 in plan view, and is electrically connected to the n-side electrode 40. The n-pad electrode 60 is disposed in the second region R2, and is electrically connected to the n-side semiconductor layer 11 via the contact portion 41p, the n-side wiring portion 42, and the n-side conductive portion 41 d. The n-pad electrode 60 is preferably made of the same metal as the p-pad electrode 70 from the viewpoint of simplifying the manufacturing process. In addition, different metals may be used for the n-pad electrode 60 and the p-pad electrode 70.
In addition, according to the embodiment of fig. 1, a plurality of n pad electrodes 60 are arranged outside the outer edge of p pad electrode 70 in a plan view. Since the n pad electrode 60 is arranged in plural, the current density of the n-side wiring portion 42 can be dispersed. Therefore, the variation in the emission intensity distribution of the semiconductor light emitting element 1 can be reduced. The n-pad electrode 60 is arranged in the second region R2 located at the corner of the semiconductor structure 10 among the second regions R2. By disposing the n-pad electrode 60 at the corner of the semiconductor structure 10, the area reduction of the light-emitting layer 12 can be reduced.
The semiconductor light emitting element according to the first embodiment of the present disclosure described above includes the plurality of first openings h1 around the third opening h3 in a plan view. In a plan view, a distance between a portion electrically connecting the n-side semiconductor layer 11 and the n-side electrode 41 and the n-side wiring portion 42 through the first opening h1 and a portion electrically connecting the p-side semiconductor layer 13 and the p-side electrode 50 through the third opening h3 is arranged to be small. This shortens the current path between the n-side semiconductor layer 11 and the p-side semiconductor layer 13, and thus the semiconductor light-emitting element 1 can be formed as a region having a high light emission intensity around the third opening h 3. Thus, the semiconductor light emitting element 1 having high light emission efficiency can be formed. The semiconductor light emitting element of the first embodiment of the present disclosure is provided with a p-pad electrode 70 covering the first region R1 and the third region R3. The p-pad electrode 70 is disposed so as to cover the light-emitting layer 12 in the first region R1. Thus, the semiconductor light-emitting element 1 having high heat dissipation properties can be formed by which heat generated by the light emission of the light-emitting layer 12 can be efficiently dissipated by the p-pad electrode 70.
Modified example of opening in the first insulating film 20 and/or the second insulating film 30
Next, a modification of the semiconductor light emitting element according to the first embodiment of the present disclosure will be described with reference to fig. 8 to 11. The positions and/or shapes of the openings in the first insulating film 20 and/or the second insulating film 30 according to the modification of the present disclosure are different from those of the semiconductor light emitting element according to the first embodiment described above. The other configuration is basically the same as the semiconductor light emitting element of the first embodiment of the present disclosure described above. The different configurations will be described below.
Modification 1A and modification 1B
As shown in fig. 8A and 8B, the semiconductor light emitting element 1 of modification 1A and modification 1B is different from the semiconductor light emitting element of the first embodiment in that the second insulating film 30 has a plurality of fourth openings h4 in addition to the plurality of third openings h 3. The fourth opening h4 is disposed at a position overlapping the second opening h2 of the first insulating film 20, similarly to the third opening h 3. In modification 1A shown in fig. 8A, the fourth opening h4 is located between the n-pad electrode 60 and the third opening h3 closest to the vicinity of the n-pad electrode 60 among the plurality of third openings h3 in a plan view. In modification 1A, a total of 8 fourth openings h4 are arranged in a plan view. In addition, the number of the fourth openings h4 is not particularly limited. In modification 1B shown in fig. 8B, the fourth opening h4 is located between the n-pad electrode 60 and the first opening h1 closest to the vicinity of the n-pad electrode 60 among the plurality of first openings h1 in a plan view. In fig. 8B, a total of 12 fourth openings h4 are arranged in a plan view. The fourth openings h4 are respectively arranged in three places between the n pad electrode 60 and the first opening h1 closest to the vicinity of the n pad electrode 60 among the plurality of first openings h 1. The number of the fourth openings h4 is not particularly limited. According to modification 1A and modification 1B, the fourth opening h4 electrically connected to the p-side semiconductor layer 13 by the p-pad electrode 70 is arranged between the first opening h1 closest to the n-pad electrode 60 and the n-pad electrode 60. Therefore, the current path from the p-side semiconductor layer 13 to the n-side semiconductor layer 11 can be shortened, and the region where the light emission intensity is high in which the current is concentrated can be increased. In fig. 8A and 8B, the fourth opening h4 is arranged between all of the n-pad electrodes 60 and the third opening h3 or the first opening h1 closest to each of the n-pad electrodes 60 among the plurality of first openings h1, but is not particularly limited to this. The fourth opening h4 may be disposed between at least one n-pad electrode 60 and the third opening h3 or the first opening h1 closest to the one n-pad electrode 60. The size of the fourth opening h4 is smaller than the size of the third opening h3 and the size of the second opening h2 in plan view. The size of the fourth opening h4 may be the same as or larger than the size of the third opening h3 and/or the size of the second opening h 2. In addition, the fourth opening h4 shown in fig. 8A and the fourth opening h4 shown in fig. 8B may be arranged in combination.
Modification 2-
As shown in fig. 9, the semiconductor light emitting element 1 of modification 2 is different from the semiconductor light emitting element of the first embodiment in that the second insulating film 30 has a plurality of fifth openings h5 in addition to the plurality of third openings h 3. The fifth opening h5 is disposed at a position overlapping the second opening h2 of the first insulating film 20, similarly to the third opening h 3. The fifth opening h5 is located between the first opening h1 and the n-side outer Zhou Daotong portion 41g closest to the n-side outer Zhou Daotong portion 41g among the plurality of first openings h1 in plan view. Thus, the fifth opening h5 electrically connected to the p-side semiconductor layer 13 by the p-pad electrode 70 is arranged between the first opening h1 closest to the n-side outer Zhou Daotong part 41g and the n-side outer Zhou Daotong part 41 g. Therefore, the current path from the p-side semiconductor layer 13 to the n-side semiconductor layer 11 can be shortened, and the region where the light emission intensity is high in which the current is concentrated can be increased. As shown in fig. 9, the size of the fifth opening h5 is smaller than the size of the third opening h3 or the size of the second opening h2 in plan view. The size of the fifth opening h5 may be the same as the size of the third opening h3 or the size of the second opening h2, or may be larger. In fig. 9, in a plan view, the fifth opening h5 is arranged in three portions between the first opening h1 closest to the n-side outer Zhou Daotong part 41g and the n-side outer Zhou Daotong part 41g among the plurality of first openings h 1. The number of the fifth openings h5 is not particularly limited. In fig. 9, the fifth opening h5 is arranged between all of the n-side outer portions Zhou Daotong g and the first opening h1 closest to each of the n-side outer portions Zhou Daotong g among the plurality of first openings h1, but is not particularly limited to this. The fifth opening h5 may be arranged between at least one n-side outer Zhou Daotong part 41g and the first opening h1 located in the vicinity of the one n-side outer Zhou Daotong part 41 g.
Modification 3-
As shown in fig. 10, the semiconductor light-emitting element 1 of modification 3 differs from the semiconductor light-emitting element of modification 2 described above in that the first insulating film 20 has a sixth opening h6 having a larger area than one first opening h1 in plan view, in addition to the plurality of first openings h 1. The sixth opening h6 has an elliptical shape in a plan view. This can increase the contact area between the n-side semiconductor layer 11 and the n-side electrode 40, and thus can reduce the rise of the forward voltage. The fifth opening h5 is arranged between the sixth opening h6 and the n-side outer Zhou Daotong part 41g in plan view. This shortens the current path from the p-side semiconductor layer 13 to the n-side semiconductor layer 11, and increases the area where the light emission intensity is high.
In the semiconductor light-emitting element 1 according to modification 3, the area of the fifth opening h5 is larger than the area of one third opening h3 in a plan view, and the fifth opening h5 has an elliptical shape in a plan view. This can increase the contact area between the p-side semiconductor layer 13 and the p-side electrode 50, and thus can reduce the rise of the forward voltage. The fifth openings h5 and the sixth openings h6 are alternately arranged in a plan view. In fig. 10, two fifth openings h5 having an elliptical shape in plan view and two sixth openings h6 having an elliptical shape in plan view are alternately arranged. The fifth opening h5 has an elliptical shape long in the direction in which the plurality of third openings h3 are aligned. The sixth opening h6 has an elliptical shape long in the direction in which the plurality of first openings h1 are aligned.
Modification 4-
As shown in fig. 11, the semiconductor light emitting element 1 of modification 4 differs from the semiconductor light emitting element 1 of the first embodiment in (1) the shape of the plurality of first openings h1 and (2) the positional relationship between the plurality of first openings h1 and the plurality of third openings h 3.
The first opening h1 is, for example, a parallelogram in plan view. When the first opening h1 is formed in a parallelogram shape, it is preferable that a distance between a corner of the parallelogram and the third opening h3 is reduced in a plan view. With such a shape and arrangement, the first openings h1 can be arranged at a high density so as to fill the gaps between the adjacent third openings h 3. The first opening h1 may have a rectangular shape in a plan view.
At least one side constituting the outer shape of the first opening h1 is arranged in parallel with at least one side constituting the outer shape of the adjacent first opening h1. Thus, the first openings h1 can be arranged at a high density so as to fill the gaps between the adjacent third openings h 3. The area of the outer shape of the first opening h1 is larger than the area of the outer shape of the third opening h3 in plan view. This can increase the area of the n-side electrode 40, and increase the area where the distance between the n-side semiconductor layer 11 and the p-side semiconductor layer 13 is small.
As shown in fig. 11, the plurality of first openings h1 and the plurality of third openings h3 are alternately arranged on a line parallel to the 1-side of the substrate 14.
Six first openings h1 are arranged around one third opening h3 in a plan view. This makes it possible to radially move electrons supplied from the n-side electrode 40 through the first opening h1 toward the second opening h2 disposed around, and thus to further improve the light emission efficiency. In addition, from the viewpoint of reducing the variation in the current density distribution around the third opening h3, it is preferable that the distances between the center of the third opening h3 and the centers of the six first openings h1 arranged around one third opening h3 are respectively equal.
In addition, the second insulating film 30 may have the fifth opening h5 described in modification 2, in addition to the plurality of third openings h3 of the second insulating film 30 and the plurality of second openings h2 of the first insulating film 20.
Modified example of Structure relating to pad electrode
A further modification of the semiconductor light emitting element according to the first embodiment of the present disclosure will be described below with reference to fig. 12. The structure of the modified example of the present disclosure concerning the n-pad electrode 60 and the p-pad electrode 70 is different from that of the semiconductor light emitting element of the first embodiment described above. The other configuration is basically the same as the semiconductor light emitting element of the first embodiment of the present disclosure described above. The different configurations will be described below.
Modification 5-
As shown in fig. 12, the semiconductor light-emitting element 1 of modification 5 has n-pad electrodes 60 arranged at one of four corners of the semiconductor light-emitting element 1 in a plan view. The p-pad electrode 70 is arranged so as to cover corners of the semiconductor light emitting element 1 other than the corners where the n-pad electrode 60 is arranged in a plan view. As is clear from fig. 12, the area of the p-pad electrode 70 is larger than the area of the n-pad electrode 60 in plan view.
In addition, the second region R2 where the n-pad electrode 60 is arranged is located at a corner of the semiconductor light emitting element 1. The first region R1 is located in a region other than the second region R2 and the third region R3. In the semiconductor light emitting element 1 of modification 5, the second region R2 is also located on the outer periphery (or outside) of the first region R1. The p-pad electrode 70 is disposed so as to cover the light-emitting layer 12 in the first region R1. Thus, the semiconductor light-emitting element 1 having high heat dissipation properties can be formed by which heat generated by the light emission of the light-emitting layer 12 can be efficiently dissipated by the p-pad electrode 70.
In the semiconductor light-emitting element 1 of modification 5 shown in fig. 12, the n-pad electrode 60 is disposed at a corner of the semiconductor structure 10, but the n-pad electrode 60 may be disposed at the center of a side constituting the outer edge of the semiconductor light-emitting element 1 in a plan view. In this case, the p-pad electrode 70 may have a C-shape (or U-shape) surrounding the n-pad electrode 60 in a plan view.
Next, a method of manufacturing the semiconductor light emitting element of the present disclosure will be described with reference to a manufacturing flow and the like of fig. 13.
1. Semiconductor structure preparation step
The semiconductor structure preparation step is a step of preparing the semiconductor structure 10. For example, the semiconductor structure 10 is prepared by sequentially forming the n-side semiconductor layer 11, the light-emitting layer 12, and the p-side semiconductor layer 13 on the substrate 14. As a method for forming the semiconductor structure 10, for example, a known method such as MOCVD is used. Then, with respect to the semiconductor structure 10, a part of the n-side semiconductor layer 11 is exposed from the light-emitting layer 12 and the p-side semiconductor layer 13 in the third region R3 described in the "semiconductor light-emitting element of the first embodiment". The method of exposing the n-side semiconductor layer 11 can be, for example, a known etching technique.
N-side contact electrode formation step
The n-side contact electrode forming step is a step of forming the n-side contact electrode 41 at a position where the n-side semiconductor layer 11 is exposed. The n-side contact electrode 41 may be formed by a known electrode forming technique. Examples of the method for forming the n-side contact electrode 41 include sputtering and vapor deposition. In the n-side electrode forming step, an n-side electrode 41 having a contact portion 41p, an n-side outer Zhou Daotong portion 41g, and an n-side conductive portion 41d is formed. In the n-side electrode forming step, an insulating film may be formed on the outermost surface of the n-side electrode 41. In the step of forming the first insulating film 20, the insulating film formed on the outermost surface of the n-side contact electrode 41 may be removed in the step of forming the first opening h1 and the second opening h2 in the first insulating film forming step described later.
3.p side electrode Forming Process
The p-side electrode forming step is a step of forming a p-side electrode 50 on the p-side semiconductor layer 13 of the semiconductor structure 10. The p-side electrode 50 may be formed by a known electrode forming technique. Examples of the method for forming the p-side electrode 50 include sputtering and vapor deposition. In the p-side electrode forming step, the p-side electrode 50 can be formed on the p-side semiconductor layer 13 in the first region R1. As shown in fig. 3, the p-side electrode 50 has a plurality of circular openings in a plan view. In the opening of the p-side electrode 50, the contact portion 41p of the n-side contact electrode 41 is exposed.
4. First insulating film formation step
The first insulating film forming step is a step of forming the first insulating film 20 having the first opening h1 and the second opening h2 on the n-side contact electrode 41 and the p-side electrode 50. The first insulating film 20 may be formed by a known insulating film forming technique. Examples of the method for forming the first insulating film 20 include a sputtering method, a vapor deposition method, and a chemical vapor deposition method.
The first insulating film forming step includes: a step of forming a first insulating film 20 on the n-side contact electrode 41 and the p-side electrode 50; and forming a first opening h1 for electrically connecting to the n-side wiring portion 42, an opening A1, and a second opening h2 for electrically connecting to the p-pad electrode 70 in the first insulating film 20. The first opening h1 and the second opening h2 may be formed by forming a resist mask on the first insulating film 20 and then removing a portion of the first insulating film 20 through the resist mask. For example, a resist mask may be formed at a position corresponding to the first opening h1 and the second opening h2 in the first insulating film 20. The removal of the first insulating film 20 may employ a well-known etching technique. As a method for removing the first insulating film 20, wet etching, dry etching, or the like can be given.
N-side wiring portion forming step
The n-side wiring portion forming step is a step of forming the n-side wiring portion 42 on the first insulating film 20. The n-side wiring portion 42 may be formed by a known electrode forming technique. Examples of the method for forming the n-side wiring portion 42 include sputtering and vapor deposition. As shown in fig. 5, the n-side wiring portion 42 has a plurality of openings that are circular in plan view. In the opening of the n-side wiring portion 42, the p-side electrode 50 is exposed. In the n-side wiring portion forming step, an insulating film may be formed on the outermost surface of the n-side wiring portion 42. In the step of forming the third opening h3 in the second insulating film 30, the insulating film formed on the outermost surface of the n-side wiring portion 42 may be removed in the step of forming the second insulating film, which will be described later.
6. Second insulating film formation step
The second insulating film forming step is a step of forming the second insulating film 30 having the third opening h3 on the n-side wiring portion 42. The third opening h3 may be formed at a position overlapping the second opening h2 in a plan view. The second insulating film 30 may be formed by a known insulating film forming technique. Examples thereof include sputtering, vapor deposition, and chemical vapor deposition. The second insulating film 30 may be the same material as the first insulating film, or may be a different material.
The second insulating film forming step includes a step of forming a second insulating film 30 on the n-side wiring portion 42, and a step of forming a third opening h3 in the second insulating film 30 for electrical connection with the p-pad electrode 70. The third opening h3 may be formed by removing a portion of the second insulating film 30 through a resist mask after forming the resist mask on the second insulating film 30. For example, a resist mask may be formed at a position corresponding to the second opening h2 in the second insulating film 30. The removal of the second insulating film 30 may employ a well-known etching technique. Examples of the method for removing the second insulating film 30 include wet etching and dry etching.
Before the second insulating film forming step, a step of exposing the substrate 14 from the semiconductor structure 10 at the outer edge of the semiconductor light emitting element 1 may be included. The outer edge of the semiconductor light emitting element 1 is located outside the opening A1 in a plan view. By performing the step of exposing the substrate 14 from the semiconductor structure 10, a part of the side surface of the n-side semiconductor layer 11, a part of the side surface of the first insulating film 20, and a part of the side surface of the n-side wiring portion 42 are exposed. In the second insulating film forming step, the second insulating film 30 may be formed on the exposed substrate 14. As shown in fig. 2, a part of the exposed side surface of the n-side semiconductor layer 11, a part of the side surface of the first insulating film 20, and a part of the side surface of the n-side wiring portion 42 can be covered with the second insulating film 30.
N-pad electrode and p-pad electrode forming process
The n-pad electrode and p-pad electrode forming step is a step of forming an n-pad electrode 60 electrically connected to the n-side wiring portion 42 and a p-pad electrode 70 electrically connected to the p-side electrode 50. The n-pad electrode 60 and the p-pad electrode 70 may be formed by a known electrode forming technique. Examples of the method for forming the n-pad electrode 60 and the p-pad electrode 70 include sputtering and vapor deposition. The n-pad electrode 60 and the p-pad electrode 70, which are made of the same metal material, may be formed at the same time. The n-pad electrode 60 and the p-pad electrode 70 may be formed using different metal materials in different steps.
The step of cutting the substrate 14 may be provided after the step of forming the n-pad electrode and the p-pad electrode. The step of dicing the substrate 14 is a step of singulating the plurality of semiconductor light emitting elements 1 formed on the substrate 14 into a plurality of semiconductor light emitting elements 1 each including the substrate 14. Examples of the method for cutting the substrate 14 include irradiation of a laser beam and dicing with a blade.
According to the method for manufacturing a semiconductor light-emitting element of the present disclosure, as described in the above-described "semiconductor light-emitting element of the first embodiment", a semiconductor light-emitting element having improved light-emitting efficiency and heat dissipation can be manufactured.
Description of first verification test
A first verification test was performed with respect to the semiconductor light emitting element of the present disclosure. Specifically, semiconductor light-emitting elements of comparative examples and examples shown below were manufactured.
< embodiment >
First, a common structure will be described for the basic structure of the semiconductor light emitting element of examples 1 to 7.
(common Structure of semiconductor light-emitting elements of examples 1 to 7)
The semiconductor light emitting elements 1A to 1G of examples 1 to 7 shown in fig. 14A to G have substantially the same basic structure as the first embodiment shown in fig. 1 to 7 described above. The semiconductor light emitting elements 1A to 1G of examples 1 to 7 include a semiconductor structure 10, an n-side electrode 40, an n-pad electrode 60, a first insulating film 20, a second insulating film 30, a p-side electrode 50, and a p-pad electrode 70 on a substrate 14. Hereinafter, the structure common to the semiconductor light emitting elements 1A to 1G of examples 1 to 7 will be described in detail. As the substrate 14, a sapphire substrate is used. The substrate 14 is square with 1 side of 1mm in plan view. As the semiconductor structure 10, a nitride semiconductor in which an n-type semiconductor layer including an AlGaN layer having an Al composition ratio of 60% and a p-type semiconductor layer including an AlGaN layer having an Al composition ratio of 20% are stacked is used. As the n-side electrode 41 of the n-side electrode 40, a Ti layer having a thickness of 25nm, an Al alloy layer having a thickness of 100nm, and a thick layer were sequentially laminated A laminated structure of a Ta layer having a thickness of 500nm, a Ru layer having a thickness of 120nm, and a Ti layer having a thickness of 120 nm. As the n-side wiring portion 42, a laminated structure in which a Ti layer having a thickness of 1.5nm, an Rh layer having a thickness of 500nm, and a Ti layer having a thickness of 10nm are laminated in this order was used. As the first insulating film 20, siO with a thickness of 800nm was used 2 A layer. As the p-side electrode 50, a laminated structure in which an Rh layer having a thickness of 100nm, a Ni layer having a thickness of 6nm, and an Au layer having a thickness of 7nm were laminated in this order was used. As the second insulating film 30, siO with a thickness of 800nm was used 2 A layer. As the n-pad electrode 60 and the p-pad electrode 70, a laminated structure in which a Ti layer having a thickness of 200nm, a Pt layer having a thickness of 200nm, and an Au layer having a thickness of 500nm were laminated in this order was used.
In the semiconductor light emitting elements 1A to 1G of examples 1 to 7, the outer shape of the first region R1 is an octagonal shape in plan view. The first region R1 has an outer shape with an area of 670, 957 μm 2 . The outer shape of the p-pad electrode 70 is an octagonal shape in plan view. The n-pad electrodes 60 are disposed at four corners of the substrate 14 located outside the outer edge of the p-pad electrode 70, respectively. The semiconductor light emitting elements 1A to 1G of examples 1 to 7 have a contact portion 41p and an n-side outer Zhou Daotong portion 41G of a common size. In the semiconductor light emitting elements 1A to 1G of examples 1 to 7, the area of the contact portion 41p added to the n-side outer Zhou Daotong portion 41G was 210, 024 μm 2 . In the semiconductor light emitting elements 1A to 1G of examples 1 to 7, the outer shape of the n-side conduction portion 41d is a circular shape in a plan view. The diameter of one n-side conduction portion 41d is 20 μm and the area is 314. Mu.m 2 。
Next, the differences between the semiconductor light emitting elements 1A to 1G of examples 1 to 7 will be described in detail. The semiconductor light emitting elements 1A to 1G of examples 1 to 7 have different total areas of the n-side contact electrode 41 and the light emitting layer 12, respectively. The total area of the n-side electrode 41 increases, and the total area of the light-emitting layer 12 decreases. The semiconductor light emitting elements 1A to 1G of examples 1 to 7 each have a different total area of the n-side conduction portion 41 d.
(semiconductor light-emitting element 1A of example 1: see FIG. 14A)
In the semiconductor light emitting element 1A of embodiment 1, the number of n-side conductive portions 41d is 156. The number of first openings h1 for disposing the n-side conduction portions 41d is 156.
In the semiconductor light emitting element 1A of embodiment 1, the number of the second opening h2 and the third opening h3 for realizing the conduction of the p-side electrode 50 is 145. The diameter of the third opening h3 of the semiconductor light emitting element 1A is 12 μm.
In the semiconductor light emitting element 1A of example 1, the area of the n-side contact electrode 41 was 259, 008 μm 2 . As shown in fig. 4, the "area of the n-side contact electrode" in the present specification is the total area of the areas of the contact portion 41p, the n-side outer Zhou Daotong portion 41g, and the n-side conductive portion 41d in a plan view.
In the semiconductor light-emitting element 1A of example 1, the area of the light-emitting layer 12 was 529, 465 μm 2 . In the present specification, the "area of the light-emitting layer" is an area of the light-emitting layer 12 in a plan view, as shown in fig. 2 and 14A.
(semiconductor light-emitting element 1B of example 2: see FIG. 14B)
In the semiconductor light emitting element 1B of embodiment 2, the number of n-side conductive portions 41d is 120. The number of first openings h1 for disposing the n-side conduction portions 41d is 120.
In the semiconductor light emitting element 1B of embodiment 2, the number of the second openings h2 (or the third openings h 3) for achieving the conduction of the p-side electrode 50 is set to 109. The diameter of the third opening h3 of the semiconductor light emitting element 1B is 12 μm in plan view.
In the semiconductor light emitting element 1B of example 2, the area of the n-side contact electrode 41 was 247, 704 μm 2 . In addition, in the semiconductor light-emitting element 1B of example 2, the area of the light-emitting layer 12 was 562, 117 μm 2 。
(semiconductor light-emitting element 1C of example 3: see FIG. 14C)
In the semiconductor light emitting element 1C of embodiment 3, the number of n-side conductive portions 41d is 76. The number of first openings h1 for disposing the n-side conduction portions 41d is 76.
In the semiconductor light emitting element 1C of embodiment 3, the number of the second opening h2 and the third opening h3 for achieving conduction of the p-side electrode 50 is 69. The diameter of the third opening h3 of the semiconductor light emitting element 1C is 32 μm in plan view.
In the semiconductor light emitting element 1C of example 3, the area of the n-side contact electrode 41 was 233, 888 μm 2 . In addition, in the semiconductor light-emitting element 1C of example 3, the area of the light-emitting layer 12 was 602 to 025 μm 2 。
(semiconductor light-emitting element 1D of example 4: see FIG. 14D)
In the semiconductor light emitting element 1D of embodiment 4, the number of n-side conductive portions 41D is 69. The number of first openings h1 for disposing the n-side conduction portions 41d is 69.
In the semiconductor light emitting element 1D of embodiment 4, the number of the second opening h2 and the third opening h3 for achieving conduction of the p-side electrode 50 is set to 60. The diameter of the third opening h3 of the semiconductor light emitting element 1D is 32 μm in plan view.
In the semiconductor light emitting element 1D of example 4, the area of the n-side contact electrode 41 was 231, 690 μm 2 . In the semiconductor light-emitting device 1D of example 4, the area of the light-emitting layer 12 was 608 to 374 μm 2 。
(semiconductor light-emitting element 1E of example 5: see FIG. 14E)
In the semiconductor light emitting element 1E of embodiment 5, the number of n-side conductive portions 41d is set to 52. The number of first openings h1 for disposing the n-side conduction portions 41d is 52.
In the semiconductor light emitting element 1E of example 5, the number of the second opening h2 and the third opening h3 for realizing the conduction of the p-side electrode 50 is set to 45. The diameter of the third opening h3 of the semiconductor light emitting element 1E is 32 μm in plan view.
In the semiconductor light emitting element 1E of example 5, the area of the n-side contact electrode 41 was 226, 352 μm 2 . In the semiconductor light-emitting element 1E of example 5, the area of the light-emitting layer 12 was 623, 793 μm 2 。
(semiconductor light-emitting element 1F of example 6: see FIG. 14F)
In the semiconductor light emitting element 1F of embodiment 6, the number of n-side conductive portions 41d is set to 37. The number of first openings h1 for disposing the n-side conduction portions 41d is 37.
In the semiconductor light emitting element 1F of example 6, the number of the second opening h2 and the third opening h3 for achieving conduction of the p-side electrode 50 is set to 32. The diameter of the third opening h3 of the semiconductor light emitting element 1F is 32 μm in plan view.
In the semiconductor light emitting element 1F of example 6, the area of the n-side contact electrode 41 was 221, 642 μm 2 . In addition, in the semiconductor light-emitting element 1F of example 6, the area of the light-emitting layer 12 was 637 to 398 μm 2 。
(semiconductor light-emitting element 1G of example 7: see FIG. 14G)
In the semiconductor light emitting element 1G of embodiment 7, the number of n-side conductive portions 41d is 24. The number of first openings h1 for disposing the n-side conduction portions 41d is 24.
In the semiconductor light emitting element 1G of embodiment 7, the number of the second opening h2 and the third opening h3 for achieving conduction of the p-side electrode 50 is set to 21. The diameter of the third opening h3 of the semiconductor light emitting element 1G is 32 μm in plan view.
In the semiconductor light emitting element 1G of example 7, the area of the n-side contact electrode 41 was 217, 560 μm 2 . In addition, in the semiconductor light-emitting element 1G of example 7, the area of the light-emitting layer 12 was 649 to 189 μm 2 。
Comparative example >
Next, a structure of the semiconductor light emitting element of the comparative example will be described.
( Structure of semiconductor light emitting element of comparative example: referring to FIG. 14H )
The semiconductor light-emitting device of the comparative example shown in fig. 14H includes a semiconductor structure 110, an n-side electrode 400, an n-pad electrode 600, a first insulating film 120, a second insulating film 130, a p-side electrode 500, and a p-pad electrode 700 on a substrate 114, as in the semiconductor light-emitting devices 1A to 1G of examples 1 to 7. As the substrate 114, a sapphire substrate is used. The substrate 114 is square with 1 side of 1mm in plan view. The semiconductor structure 110 includes an n-side semiconductor layer, a light-emitting layer, and a p-side semiconductor layer. The n-side semiconductor layer has a first region R1', a second region located on the outer periphery of the first region R1', and a plurality of third regions R3 'surrounded by the first region R1'. The first insulating film includes a plurality of first openings h1' arranged on the third region R3' and a plurality of second openings h2' arranged on the p-side semiconductor layer. The second insulating film includes a plurality of third openings h3 'arranged at positions overlapping the plurality of second openings h2'. The n-side electrode 400 is electrically connected to the n-side semiconductor layer at the plurality of first openings h 1'. The n-side electrode 400 is electrically connected to the n-pad electrode 600. The n-side semiconductor layer and the n-pad electrode 600 are electrically connected via the n-side electrode 400. The p-pad electrode 700 is disposed on the second insulating film and electrically connected to the p-side semiconductor layer at a plurality of third openings h3'. The p-pad electrode 700 covers the first region R1 'and the third region R3' in plan view, and the plurality of first openings h1 'are arranged around the third opening h3'. The semiconductor light emitting element 100 of the comparative example is different from the semiconductor light emitting elements 1A to 1G of examples 1 to 7 in that the first opening h1' is also arranged under the n-pad electrode 600. The semiconductor light emitting element 100 of the comparative example is different from the semiconductor light emitting elements 1A to 1G of examples 1 to 7 in that a light emitting layer is arranged under the n-pad electrode 600. The semiconductor light-emitting elements 100 of the comparative example use the same materials and thicknesses as the semiconductor light-emitting elements 1A to 1G of examples 1 to 7.
In the semiconductor light emitting element 100 of the comparative example, the first region R1' has a quadrangular shape in plan view. The first region R1' has an outer shape with an area of 809, 657 μm 2 . In the semiconductor light emitting element 100 of the comparative example, the p-pad electrode 700 has a square shape in plan view. In the semiconductor light emitting element 100 of the comparative example, the n-pad electrodes 600 are disposed at positions adjacent to two sides of the substrate facing each other in a plan view. The outer shape of the n-pad electrode 600 is a quadrangle shape in a plan view.
In the semiconductor light emitting element 100 of the comparative example, the number of n-side conductive portions 410d is 81. The area of one n-side conduction portion 410d is 20 μm 2 . The number of first openings h1' for disposing the n-side conduction portions 410d is 81.
In the semiconductor light emitting element 100 of the comparative example, the number of the second opening h2 'and the third opening h3' for realizing the conduction of the p-side electrode 500 is 48. The diameter of the third opening h3' of the semiconductor light emitting element 100 of the comparative example was 32 μm.
In the semiconductor light emitting device 100 of the comparative example, the area of the n-side electrode was 91 and 426. Mu.m 2 . In the semiconductor light-emitting element 100 of the comparative example, the area of the light-emitting layer was 736, 190. Mu.m 2 。
Table 1 shows the number of n-side conductive portions, the area of the n-side electrode, and the area of the light-emitting layer in each of examples 1 to 7 and comparative examples.
[ Table 1 ]
As shown in table 1, the area of the n-side contact electrode increases as the number of n-side conductive portions increases. In addition, the area of the light emitting layer decreases as the number of n-side conductive portions increases. The area of the n-side contact electrode 41 of the semiconductor light emitting elements 1A to 1G of examples 1 to 7 is larger than that of the n-side contact electrode of the semiconductor light emitting element 100 of comparative example. The area of the light-emitting layer 12 of the semiconductor light-emitting elements 1A to 1G of examples 1 to 7 is smaller than that of the light-emitting layer of the semiconductor light-emitting element 100 of comparative example.
In the semiconductor light emitting element 100 of the comparative example, a light emitting layer is arranged under the n-pad electrode 600. Therefore, the area of the n-side contact electrode of the semiconductor light emitting element 100 of the comparative example is smaller than the area of the n-side contact electrode 41 of the semiconductor light emitting elements 1A to 1G of examples 1 to 7. The number 410d of n-side conductive portions of the semiconductor light-emitting element 100 of the comparative example is larger than that of examples 3 to 7, but the area of the light-emitting layer of the semiconductor light-emitting element 100 of the comparative example is larger than that of the light-emitting layer 12 of the semiconductor light-emitting elements 1A to 1G of examples 1 to 7.
Next, with respect to examples 1 to 7 and comparative examples, the relative output and forward voltage Vf, which are indicators of luminance when a forward current of 350mA was applied to the semiconductor light-emitting element, were measured. The relative output is a value measured by passing a current between the p-side semiconductor layer and the n-side semiconductor layer of the semiconductor light emitting element in a wafer state to emit light and receiving the emitted light by the photodiode. The larger the value of the relative output means brighter, and the smaller the value of the relative output means darker. The value of the forward voltage Vf (V) in table 2 is obtained by rounding the third decimal point of the measured value of the forward voltage Vf (V). The relation among the number of n-side conduction parts, the relative output [ a.u ] and the forward voltage Vf (V) is shown in table 2 for examples 1 to 7 and comparative example. Fig. 15 is a graph showing the relationship between the number of n-side conductive portions and the relative output. In fig. 15, the vertical axis represents the relative output, and the horizontal axis represents the number of n-side conduction portions. Fig. 16 is a graph showing the relationship between the number of n-side conduction units and the forward voltage Vf. In fig. 16, the vertical axis represents the forward voltage Vf, and the horizontal axis represents the number of n-side conduction portions. In fig. 15 and 16, the results of examples 1 to 7 are shown by black circles, and the results of comparative examples are shown by open circles.
[ Table 2 ]
number of n-side conductive portions Relative output [ a.u.] Forward voltage Vf (V)
Example 1 156 149，483 8.37
Example 2 120 147，134 8.46
Example 3 76 140，655 8.60
Example 4 69 143，022 8.64
Example 5 52 140，472 8.72
Example 6 37 136，944 8.75
Example 7 24 136，708 8.89
Comparative example 81 135，386 8.72
Based on the graph of fig. 15 and the results of table 2, the semiconductor light emitting elements 1A to 1G of examples 1 to 7 obtain higher relative outputs than the semiconductor light emitting element 100 of the comparative example. In examples 1 to 7, the greater the number of n-side conduction portions 41d, the higher the relative output. It was confirmed that even when the number of n-side conductive portions 41d was increased and the area of the light-emitting layer 12 was decreased, a high relative output was obtained. This is presumably because, by disposing the n-side conductive portions 41d more for the same first region R1, the distance between the portion where the n-side wiring portion 42 and the n-side electrode 41 are electrically connected and the portion where the p-side electrode 50 and the p-pad electrode 70 are electrically connected becomes smaller.
Based on the graph of fig. 16 and the results of table 2, in examples 1 to 7, the greater the number of n-side conduction portions 41d, the lower the forward voltage Vf is obtained. Examples 1 to 5 obtained a forward voltage Vf equivalent to that of the semiconductor light-emitting element 100 of the comparative example or lower than that of the semiconductor light-emitting element 100 of the comparative example.
From the above results, it was confirmed that by reducing the distance between the portion where the n-side wiring portion 42 is electrically connected to the n-side electrode 41 and the portion where the p-side electrode 50 is electrically connected to the p-pad electrode 70, a semiconductor light emitting element having a higher relative output and a lower forward voltage Vf can be obtained.
Description of the second verification test
A second verification test was performed with respect to the semiconductor light emitting element of the present disclosure. The second verification test produced semiconductor light emitting elements of examples 1 to 4 and examples 8 to 9 shown below.
Further, examples 1 to 4 and examples 8 to 9, which are targets of the second verification test, were different in thickness between the semiconductor structure 10 and the electrode, which are targets of the first verification test. The semiconductor light emitting elements of examples 1 to 4 and examples 8 to 9, which are the subjects of the second verification test, have substantially the same structure as the first verification test except for the configurations described later. Hereinafter, details will be described in detail.
As the semiconductor structure 10, a nitride semiconductor in which an n-type semiconductor layer including an AlGaN layer having an Al composition ratio of 60% and a p-type semiconductor layer including an AlGaN layer having an Al composition ratio of 40% and a GaN layer disposed on the AlGaN layer are stacked is used. As the n-side wiring portion 42 of the n-side electrode 40, a laminated structure in which a Ti layer having a thickness of 1.6nm, a Ru layer having a thickness of 500nm, and a Ti layer having a thickness of 10nm are laminated in this order was used. As the p-side electrode 50, a laminated structure in which a Ru layer having a thickness of 340nm, a Ni layer having a thickness of 9nm, and an Au layer having a thickness of 7nm were laminated in this order was used.
In addition, the number of n-side conductive portions and the area (μm) of the n-side contact electrode of the semiconductor light emitting elements of examples 1 to 4, which were the subjects of the second verification test 2 ) Area of light-emitting layer (μm) 2 ) The same as the semiconductor light emitting elements of examples 1 to 4 described in the first verification test described above.
In embodiments 8 and 9, the number of n-side conduction portions 41d and the number of third openings h3 are mainly different from those in embodiments 1 to 4. For example, example 8 narrows the interval between the n-side conductive parts 41d and the third openings h3 in example 1 shown in fig. 14A, and more than 60 n-side conductive parts 41d and more than 84 third openings h3 are arranged in example 1. In example 9, the interval between the n-side conductive portions 41d and the third openings h3 in example 1 shown in fig. 14A was similarly narrowed, and 29 n-side conductive portions 41d were arranged more than in example 1, and 27 third openings h3 were arranged more than in example 1. Therefore, in examples 8 and 9, the total area of the n-side electrode 41 increases and the total area of the light-emitting layer 12 decreases as compared with examples 1 to 7.
In example 8, the number of n-side conductive portions 41d was 216, and the number of first openings h1 for disposing n-side conductive portions 41d was 216. In example 8, 229 openings h2 and h3 are provided for conducting the p-side electrode 50. The diameter of the third opening h3 of example 8 was 6. Mu.m. In example 9, the number of n-side conductive portions 41d was 185, and the number of first openings h1 for disposing n-side conductive portions 41d was 185. In example 9, the number of the second openings h2 and the third openings h3 for conducting the p-side electrode 50 was 172. The diameter of the third opening h3 of example 9 was 6. Mu.m. Examples 8 and 9 include the area of the n-side contact electrode and the area of the light-emitting layer shown in table 3 below.
[ Table 3 ]
Next, with regard to examples 1 to 4 and 8 to 9, the output (mW) and forward voltage Vf when a forward current of 350mA was applied to the semiconductor light-emitting element were measured. The relation between the number of n-side conduction portions, the output (mW) and the forward voltage Vf (V) is shown in table 4 for examples 1 to 4 and 8 to 9. In fig. 17, a graph showing the relationship between the number of n-side conductive portions and the output (vertical axis: output (mW)), and horizontal axis: number of n-side conductive portions) is shown, and a graph showing the relationship between the number of n-side conductive portions and the forward voltage (V) (vertical axis: forward voltage (V)), and horizontal axis: number of n-side conductive portions) is shown.
[ Table 4 ]
number of n-side conductive portions Output (mW) Forward voltage Vf (V)
Example 8 216 172 6.19
Example 9 185 170 6.20
Example 1 156 167 6.19
Example 2 120 163 6.21
Example 3 76 162 6.23
Example 4 69 161 6.24
Based on the graph of fig. 17 and the results of table 4, the semiconductor light emitting elements of examples 1 to 4 and 8 to 9 obtained higher outputs. In examples 1 to 4 and 8 to 9, the number of n-side conduction portions 41d was increased to obtain a higher output. As a result of the first verification test, in the second verification test, it was confirmed that even when the number of n-side conductive portions 41d was increased and the area of the light-emitting layer 12 was decreased, a high output was obtained. This is presumably because, by disposing a larger number of n-side conductive portions 41d for the first region R1 of the same area, the distance between the portion where the n-side wiring portion 42 is electrically connected to the n-side electrode 41 and the portion where the p-side electrode 50 is electrically connected to the p-pad electrode 70 becomes smaller.
Based on the graph of fig. 18 and the results of table 4, in examples 1 to 4 and 8 to 9, the number of n-side conduction portions 41d increases, and a lower forward voltage Vf is obtained. From the result of the second verification test, it was confirmed that by reducing the distance between the portion where the n-side wiring portion 42 is electrically connected to the n-side electrode 41 and the portion where the p-side electrode 50 is electrically connected to the p-pad electrode 70, a semiconductor light emitting element having a higher output and a lower forward voltage Vf can be obtained.
The embodiments disclosed herein are illustrative in all respects and are not to be construed as limiting. Accordingly, the technical scope of the present disclosure is not to be interpreted by the embodiments described above, but is to be defined based on the description of the claims. The technical scope of the present disclosure includes all modifications within the meaning and scope equivalent to the claims.
The present disclosure includes the following embodiments.
[ item 1]
A semiconductor light emitting element is provided with:
a semiconductor structure having: an n-side semiconductor layer having a first region, a second region located on an outer periphery of the first region, and a plurality of third regions surrounded by the first region in a plan view; a light-emitting layer disposed on the first region; and a p-side semiconductor layer disposed on the light-emitting layer;
A first insulating film disposed on the semiconductor structure and having a plurality of first openings disposed in the third region and a plurality of second openings disposed in the p-side semiconductor layer;
an n-side electrode disposed on the first insulating film and electrically connected to the n-side semiconductor layer at the plurality of first openings;
an n-pad electrode disposed in the second region and electrically connected to the n-side electrode;
a second insulating film disposed on the first insulating film and having a plurality of third openings disposed at positions overlapping the plurality of second openings; and
a p-pad electrode disposed on the second insulating film and electrically connected to the p-side semiconductor layer at the plurality of third openings,
the p-pad electrode covers the first region and the third region in a plan view,
the plurality of first openings are arranged around the third opening in a plan view.
[ item 2]
The semiconductor light emitting element according to item 1,
the first opening and the third opening are arranged in a staggered manner in a plan view.
[ item 3]
The semiconductor light emitting element according to item 1,
the light-emitting layer includes an AlGaN layer having an Al composition ratio of 40% to 60%.
[ item 4]
A semiconductor light-emitting element according to any one of items 1 to 3,
the n-pad electrode is disposed outside the outer edge of the p-pad electrode in a plan view.
[ item 5]
The semiconductor light-emitting element according to any one of items 1 to 4,
the semiconductor structure is rectangular in plan view,
the n-pad electrode is disposed in the second region located at a corner of the semiconductor structure.
[ item 6]
The semiconductor light-emitting element according to any one of items 1 to 5,
the p-pad electrode has an octagonal shape in a plan view.
[ item 7]
The semiconductor light-emitting element according to any one of items 1 to 6,
the p-pad electrode has an area larger than that of the light-emitting layer in plan view.
[ item 8]
The semiconductor light-emitting element according to any one of items 1 to 7,
a bonding member is disposed on the p-pad electrode above the third opening.
[ item 9]
The semiconductor light-emitting element according to any one of items 1 to 8,
the n-side electrode has a plurality of n-side conductive portions and n-side wiring portions,
the n-side conductive portion is in contact with the n-side semiconductor layer at the first opening portion,
the n-side wiring portion electrically connects the n-side conductive portion and the n-pad electrode.
[ item 10]
The semiconductor light-emitting element according to any one of items 1 to 9,
the second insulating film has a fourth opening portion located between the first opening portion closest to the n-pad electrode among the plurality of first opening portions and the n-pad electrode in a plan view.
[ 11]
The semiconductor light-emitting element according to any one of items 1 to 10,
the n-side electrode has an n-side outer Zhou Daotong portion, the n-side outer Zhou Daotong portion being in contact with the n-side semiconductor layer in the second region not overlapping the n-pad electrode in a plan view,
the n-side outer Zhou Daotong parts are disposed outside the outer edges of the p-pad electrodes in a plan view,
the second insulating film has a fifth opening portion located between the first opening portion closest to the n-side outer Zhou Daotong portion and the n-side outer peripheral conductive portion of the plurality of first opening portions in a plan view.
[ item 12]
The semiconductor light emitting element according to item 11,
the first insulating film has a sixth opening portion having an area larger than an area of one of the first opening portions in a plan view,
the sixth opening portion has an elliptical shape in a plan view,
The fifth opening is arranged between the sixth opening and the n-side outer peripheral conduction portion in a plan view.
[ item 13]
The semiconductor light emitting element according to item 11 or 12,
the fifth opening has an area larger than that of one of the third openings in a plan view,
the fifth opening is elliptical in plan view.
Description of the reference numerals
1. Semiconductor light emitting device
10. Semiconductor structure
11 n-side semiconductor layer
12. Light-emitting layer
13 p-side semiconductor layer
14. Substrate board
20. First insulating film
30. Second insulating film
40 n-side electrode
41 n-side contact electrode
41p contact
41g n side outer Zhou Daotong part
41d n side conduction portion
42 n-side wiring part
50 P-side electrode
60 n-pad electrode
70 P-pad electrode
80. Joint component
R1 first region
R2 second region
R3 third region
h1 A first opening part
h2 A second opening part
h3 A third opening part

Claims (13)

1. A semiconductor light emitting element is characterized by comprising:
a semiconductor structure having: an n-side semiconductor layer having a first region, a second region located on an outer periphery of the first region, and a plurality of third regions surrounded by the first region in a plan view; a light-emitting layer disposed on the first region; and a p-side semiconductor layer disposed on the light-emitting layer;
A first insulating film disposed on the semiconductor structure and having a plurality of first openings disposed in the third region and a plurality of second openings disposed in the p-side semiconductor layer;
an n-side electrode disposed on the first insulating film and electrically connected to the n-side semiconductor layer at the plurality of first openings;
an n-pad electrode disposed in the second region and electrically connected to the n-side electrode;
a second insulating film disposed on the first insulating film and having a plurality of third openings disposed at positions overlapping the plurality of second openings; and
a p-pad electrode disposed on the second insulating film and electrically connected to the p-side semiconductor layer at the plurality of third openings,
the p-pad electrode covers the first region and the third region in a plan view,
the plurality of first openings are arranged around the third opening in a plan view.
2. The semiconductor light emitting device according to claim 1, wherein,
the first opening and the third opening are arranged in a staggered manner in a plan view.
3. The semiconductor light emitting device according to claim 1, wherein,
The light-emitting layer includes an AlGaN layer having an Al composition ratio of 40% to 60%.
4. A semiconductor light-emitting element according to any one of claims 1 to 3, wherein,
the n-pad electrode is disposed outside the outer edge of the p-pad electrode in a plan view.
5. A semiconductor light-emitting element according to any one of claims 1 to 3, wherein,
the semiconductor structure is rectangular in plan view,
the n-pad electrode is disposed in the second region located at a corner of the semiconductor structure.
6. A semiconductor light-emitting element according to any one of claims 1 to 3, wherein,
the p-pad electrode has an octagonal shape in a plan view.
7. A semiconductor light-emitting element according to any one of claims 1 to 3, wherein,
the p-pad electrode has an area larger than that of the light-emitting layer in plan view.
8. A semiconductor light-emitting element according to any one of claims 1 to 3, wherein,
a bonding member is disposed on the p-pad electrode above the third opening.
9. A semiconductor light-emitting element according to any one of claims 1 to 3, wherein,
The n-side electrode has a plurality of n-side conductive portions and n-side wiring portions,
the n-side conductive portion is in contact with the n-side semiconductor layer at the first opening portion,
the n-side wiring portion electrically connects the n-side conductive portion and the n-pad electrode.
10. A semiconductor light-emitting element according to any one of claims 1 to 3, wherein,
the second insulating film has a fourth opening portion located between the first opening portion closest to the n-pad electrode among the plurality of first opening portions and the n-pad electrode in a plan view.
11. The semiconductor light emitting device according to claim 1, wherein,
the n-side electrode has an n-side outer Zhou Daotong portion, the n-side outer Zhou Daotong portion being in contact with the n-side semiconductor layer in the second region not overlapping the n-pad electrode in a plan view,
the n-side outer Zhou Daotong parts are disposed outside the outer edges of the p-pad electrodes in a plan view,
the second insulating film has a fifth opening portion located between the first opening portion closest to the n-side outer Zhou Daotong portion and the n-side outer peripheral conductive portion of the plurality of first opening portions in a plan view.
12. The semiconductor light emitting device according to claim 11, wherein,
the first insulating film has a sixth opening portion having an area larger than an area of one of the first opening portions in a plan view,
the sixth opening portion has an elliptical shape in a plan view,
the fifth opening is arranged between the sixth opening and the n-side outer peripheral conduction portion in a plan view.
13. The semiconductor light-emitting element according to claim 11 or 12, wherein,
the fifth opening has an area larger than that of one of the third openings in a plan view,
the fifth opening is elliptical in plan view.
CN202310474219.4A 2022-04-28 2023-04-27 Semiconductor light emitting device Pending CN116979367A (en)

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JP2022-075313 2022-04-28
JP2022-174708 2022-10-31
JP2023044471A JP7513924B2 (en) 2022-04-28 2023-03-20 Semiconductor light emitting device
JP2023-044471 2023-03-20

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