JP4058937B2 - Semiconductor light emitting device and manufacturing method thereof - Google Patents

Semiconductor light emitting device and manufacturing method thereof Download PDF

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JP4058937B2
JP4058937B2 JP2001341682A JP2001341682A JP4058937B2 JP 4058937 B2 JP4058937 B2 JP 4058937B2 JP 2001341682 A JP2001341682 A JP 2001341682A JP 2001341682 A JP2001341682 A JP 2001341682A JP 4058937 B2 JP4058937 B2 JP 4058937B2
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layer
emitting device
semiconductor light
active layer
light emitting
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JP2003142727A (en
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康彦 福田
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Panasonic Corp
Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/03—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/01033—Arsenic [As]
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    • H01L2924/1026—Compound semiconductors
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    • H01L2924/10329—Gallium arsenide [GaAs]

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Description

【０００１】
【発明の属する技術分野】
本発明は、ＩｎＧａＡｌＰを活性層とする半導体発光装置及びその製造方法に関する。
【０００２】
【従来の技術】
基板の上に化合物半導体を積層して構成される各種の半導体発光素子の中で、４元化合物半導体ＩｎＧａＡｌＰを活性層とする半導体発光素子は、高輝度のオレンジ色やアンバー色の発光ダイオード及び赤色レーザーダイオードとして製品化されている。このようなＩｎＧａＡｌＰを活性層とするものでは、ＧａＡｓを基板とすることで、従来のＧａＰやＧａＡｓ等を用いるものに比べると、赤色から緑色の高輝度発光が既に達成されている。
【０００３】
製品化されている高輝度オレンジ色またはアンバー色発光の半導体発光素子の構造の一例を図３に示す。この半導体発光素子５０は有機金属気相成長法により、ｎ型ＧａＡｓ基板５１の表面に、ｎ型ＧａＡｓバッファ層５２と、ｎ型のＧａＡｌＡｓとＩｎＡｌＰの２０ペアからなる超格子の多層反射層５３と、ｎ型ＩｎＧａＡｌＰのクラッド層５４と、ノンドープＩｎＧａＡｌＰの活性層５５と、ｐ型ＩｎＧａＡｌＰのクラッド層５６と、ｐ型ＧａＡｌＡｓの窓層５８とを順に積層したダブルヘテロ構造としたものである。
【０００４】
そして、ｎ型ＧａＡｓ基板５１側には、ＡｕとＧｅの合金層とＡｕ層からなるｎ側電極６１を形成し、ｐ型ＧａＡｌＡｓの窓層５８側には、ＡｕとＺｎの合金層とＡｕ層からなるｐ側電極６０を形成している。
【０００５】
ここで、ノンドープＩｎＧａＡｌＰの活性層５５を挟むクラッド層５４，５６は活性層５５よりＡｌ混晶比を高くすることにより、活性層５５に対する電子及び正孔の閉じ込みが行なわれる。また、窓層５８は、ｐ側電極６０から流される電流を十分に広げて活性層５５に注入するためにやや厚く（数μｍ程度）形成されている。そして、クラッド層５４，５６及び窓層５８は、ともに活性層５５から発光される光に対して透明である。
【０００６】
【発明が解決しようとする課題】
しかしながら、前記従来の半導体発光素子５０は、光取り出し面側に設けられたｐ側電極６０が活性層５５の上方に配置されているため、活性層５５から発光される光はｐ側電極６０によって遮られることになる。
【０００７】
このため、ワイヤボンディングされるｐ側電極６０の面積分だけ発光効率が下がるという問題がある。
【０００８】
そこで本発明は、活性層に無駄な電流が流れることを防止して発光効率を上げる半導体発光素子を提供することを目的とする。
【０００９】
【課題を解決するための手段】
本発明の半導体発光装置においては、活性層及びその上側層を貫通して孔部を形成し、この孔部内に絶縁膜を介してワイヤボンディング部を設け、さらにこのワイヤボンディング部を、上側層の上面に配置した線状電極に接続したものである。
【００１０】
この発明によれば、活性層に無駄な電流が流れることを防止するとともに均一に電流を流して発光効率を上げる半導体発光素子が得られる。
【００１１】
【発明の実施の形態】
本願の第１の発明は、ＩｎＧａＡｌＰを活性層とする半導体発光装置において、前記活性層及びその上側層を貫通して孔部を形成し、この孔部内の活性層及びその上側層を除去した部分に絶縁膜を介してワイヤボンディング部を設け、さらにこのワイヤボンディング部を、光取り出し面となる前記上側層の上面に配置した線状電極に接続したことを特徴とする半導体発光装置としたものであり、活性層に孔部を形成することにより、ワイヤボンディング部の下側からの発光がほとんどなくなり、活性層から発光される光がワイヤボンディング部により遮られず、また、線状電極を用いるので、電流を分散すると共に遮光を少なくするという作用を有する。
本願の第２の発明は、第１の発明において、前記上側層のうち前記活性層と接する層をＰクラッド層とし、前記活性層を挟んで前記Ｐクラッド層と反対側となる層をＮクラッド層とすることでダブルヘテロ構造を構成したことを特徴としたものである。
【００１２】
本願の第３の発明は、第１の発明または第２の発明において、前記線状電極は、前記ワイヤボンディング部を中心にして放射状に複数配置されていることを特徴とする半導体発光装置であり、ワイヤボンディング部に供給された電流は放射状に分散して均一に流される。
【００１３】
本願の第４の発明は、ＩｎＧａＡｌＰを活性層とする半導体発光装置の製造方法において、ＧａＡｓ基板上に、少なくとも多層反射層と、ＩｎＧａＡｌＰからなるＮクラッド層と、前記活性層と、ＩｎＧａＡｌＰからなるＰクラッド層と、ＧａＡｌＡｓからなる窓層とを順次積層して形成する工程と、前記窓層、前記Ｐクラッド層及び前記活性層を貫通する孔部をエッチングにより形成する工程と、前記孔部内の活性層及びその上側層を除去した部分に絶縁膜を形成する工程と、前記絶縁膜の上部にワイヤボンディング部を設けると共に、光取り出し面となる前記窓層の表面に前記ワイヤボンディング部に接続した線状電極を配置することを特徴とする半導体発光装置の製造方法であり、かかる手順によって、発光効率のよい半導体発光装置を容易に製造できる。
【００１４】
以下、本発明の実施の形態について、図１を用いて説明する。
【００１５】
図１は本発明の半導体発光装置の正断面図、図２は同半導体発光装置の平面図を示す。
【００１６】
半導体発光装置１は、有機金属気相成長法により、ｎ型のＧａＡｓ基板７の表面に、ｎ型ＧａＡｓからなるバッファ層２と、ｎ型のＧａＡｌＡｓとＩｎＡｌＰの２０ペアからなる超格子の多層反射層３と、ｎ型ＩｎＧａＡｌＰのＮクラッド層４と、ノンドープＩｎＧａＡｌＰの活性層５と、ｐ型ＩｎＧａＡｌＰのＰクラッド層６と、ｐ型ＧａＡｌＡｓの窓層８とを順に積層してダブルヘテロ構造としている。
【００１７】
そして、ＧａＡｓ基板７の下面側には、ＡｕとＧｅの合金層とＡｕ層からなるｎ側電極１１が形成されている。
【００１８】
Ｎクラッド層４，Ｐクラッド層６及び窓層８は、ともに活性層５から発光される光に対して透明である。
【００１９】
活性層５及びその上側層であるＰクラッド層６及び窓層８には、各層を貫通して円形の孔部１２が形成されている。孔部１２の底面はＮクラッド層４の上部に形成されている。孔部１２の底面及び側面には、これを覆うＳｉＯ2からなる絶縁膜１３が設けられている。
【００２０】
絶縁膜１３の上部には、ＡｕとＺｎの合金層とＡｕ層からなる金属製の円形のワイヤボンディング部１４が設けられ、窓層８の上面には、ワイヤボンディング部１４を中心にして半導体発光装置１の四隅に向かって放射状に４本配置された線状電極１５が設けられている。線状電極１５はワイヤボンディング部１４と同じ材質からなり、その内側端は、ワイヤボンディング部１４の外周部に接続されている。
【００２１】
電流は、ワイヤボンディング部１４に供給され、線状電極１５を介して、各層を下側に向かって流れる。線状電極１５によって、広い範囲に電流を分散させて流すことができる。
【００２２】
活性層５の孔部１２が形成された部分には電流が流れず、また、発光もしないので、他の部分に多くの電流を流すことができる。活性層５から発せられる光は窓層８から取り出されるが、直線状の線状電極１５に邪魔される光は少なくなり、多くの光を取り出すことができる。
【００２３】
かかる構成によって、周辺部の発光強度を強くするとともに窓層８表面で遮光される光を減らして、全体の発光効率を上げることができる。
【００２４】
次に、半導体発光装置１の製造手順について説明する。
【００２５】
まず、従来の有機金属気相成長法と同様な方法により、ＧａＡｓ基板７上に、少なくとも多層反射層３と、ＩｎＧａＡｌＰからなるＮクラッド層４と、活性層５と、ＩｎＧａＡｌＰからなるＰクラッド層６と、ＧａＡｌＡｓからなる窓層８とを順次積層して形成する。
【００２６】
次いで、窓層８、Ｐクラッド層６及び活性層５を貫通する孔部１２をエッチングにより形成する。この工程を詳しく説明すると、まず、ダブルヘテロ構造が形成されたウエハーの窓層８の表面にフォトリソグラフ工程によりレジストでパターンを形成し、中央に形成した円を除いた表面をレジスト膜で被覆する。次に、レジストが被覆されていない部分をエッチングし、窓層８、Ｐクラッド層６及び活性層５を除去し、Ｎクラッド層４を表面に露出させ、レジストを除去する。
【００２７】
次に、孔部１２に絶縁膜１３を形成する。ＳｉＯ2からなる絶縁膜１３の形成は、まず、温度４００℃程度でＣＶＤ装置を用いＳｉＯ2膜を４００ｎｍ〜５００ｎｍの膜厚で生成し、次いで、フォトリソグラフで孔部１２より直径で１０〜２０μｍ程度大きいレジストパターンを被覆し、そして、他の部分のＳｉＯ2をエッチングで除去することにより行う。
【００２８】
次に、絶縁膜１３の上部に円形のワイヤボンディング部１４を設けるとともに、窓層８の表面にワイヤボンディング部１４に接続した線状電極１５を放射状に配置、固定する。
【００２９】
このようにして、半導体発光装置１を形成することができる。
【００３０】
【発明の効果】
以上のように本発明によれば、活性層に孔部を形成することにより、ワイヤボンディング部の下側からの発光がほとんどなくなり、活性層から発光される光がワイヤボンディング部により遮られず、発光効率をよくすることができる。また、線状電極を用いるので、電流を均一に分散するとともに遮光を少なくして、さらに発光効率をよくすることができる。
【００３１】
さらに、線状電極を放射状に複数配置することにより、ワイヤボンディング部に供給された電流が放射状に分散して均一に流され、発光強度を均一化することができる。
【００３２】
また、窓層、Ｐクラッド層及び活性層を貫通する孔部をエッチングにより形成することにより、発光効率のよい半導体発光装置を容易に製造できる。
【図面の簡単な説明】
【図１】本発明の半導体発光装置の正断面図
【図２】同半導体発光装置の平面図
【図３】従来例にかかる半導体発光装置の正断面図
【符号の説明】
１ 半導体発光装置
２ バッファ層
３ 多層反射層
４ Ｎクラッド層
５ 活性層
６ Ｐクラッド層
７ ＧａＡｓ基板
８ 窓層
１１ ｎ側電極
１２ 孔部
１３ 絶縁膜
１４ ワイヤボンディング部
１５ 線状電極[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor light emitting device having InGaAlP as an active layer and a method for manufacturing the same.
[0002]
[Prior art]
Among various types of semiconductor light-emitting devices configured by stacking compound semiconductors on a substrate, semiconductor light-emitting devices having a quaternary compound semiconductor InGaAlP as an active layer are high-intensity orange or amber light-emitting diodes and red It has been commercialized as a laser diode. With such an InGaAlP active layer, high intensity light emission from red to green has already been achieved by using GaAs as a substrate as compared with conventional ones using GaP or GaAs.
[0003]
FIG. 3 shows an example of the structure of a semiconductor light emitting device that emits high-luminance orange or amber light. This semiconductor light emitting device 50 is formed by metal organic vapor phase epitaxy on the surface of an n-type GaAs substrate 51, an n-type GaAs buffer layer 52, a multilayer reflective layer 53 of a superlattice made of 20 pairs of n-type GaAlAs and InAlP, The n-type InGaAlP clad layer 54, the non-doped InGaAlP active layer 55, the p-type InGaAlP clad layer 56, and the p-type GaAlAs window layer 58 are laminated in order.
[0004]
An n-side electrode 61 made of an Au and Ge alloy layer and an Au layer is formed on the n-type GaAs substrate 51 side, and an Au and Zn alloy layer and an Au layer are formed on the p-type GaAlAs window layer 58 side. The p side electrode 60 which consists of is formed.
[0005]
Here, the clad layers 54 and 56 sandwiching the non-doped InGaAlP active layer 55 have an Al mixed crystal ratio higher than that of the active layer 55, thereby confining electrons and holes to the active layer 55. Further, the window layer 58 is formed to be slightly thick (about several μm) in order to sufficiently spread the current flowing from the p-side electrode 60 and inject it into the active layer 55. The cladding layers 54 and 56 and the window layer 58 are both transparent to the light emitted from the active layer 55.
[0006]
[Problems to be solved by the invention]
However, in the conventional semiconductor light emitting device 50, since the p-side electrode 60 provided on the light extraction surface side is disposed above the active layer 55, the light emitted from the active layer 55 is transmitted by the p-side electrode 60. It will be blocked.
[0007]
For this reason, there is a problem that the light emission efficiency is reduced by the area of the p-side electrode 60 to be wire bonded.
[0008]
SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor light emitting device that prevents the useless current from flowing through the active layer and increases the light emission efficiency.
[0009]
[Means for Solving the Problems]
In the semiconductor light emitting device of the present invention, a hole is formed through the active layer and the upper layer thereof, a wire bonding portion is provided in the hole via an insulating film, and the wire bonding portion is further connected to the upper layer. It is connected to a linear electrode arranged on the upper surface.
[0010]
According to the present invention, it is possible to obtain a semiconductor light emitting device that prevents unnecessary current from flowing through the active layer and increases the light emission efficiency by flowing the current uniformly.
[0011]
DETAILED DESCRIPTION OF THE INVENTION
1st invention of this application WHEREIN: In the semiconductor light-emitting device which uses InGaAlP as an active layer The part which penetrated the said active layer and its upper layer, formed the hole, and removed the active layer and its upper layer in this hole The semiconductor light emitting device is characterized in that a wire bonding portion is provided via an insulating film, and the wire bonding portion is further connected to a linear electrode disposed on the upper surface of the upper layer serving as a light extraction surface. Yes, by forming a hole in the active layer, light emission from the lower side of the wire bonding part is almost eliminated, light emitted from the active layer is not blocked by the wire bonding part, and a linear electrode is used. , Have the effect of dispersing the current and reducing the light shielding.
According to a second invention of the present application, in the first invention, a layer in contact with the active layer of the upper layer is a P-cladding layer, and a layer opposite to the P-cladding layer is sandwiched between the active layers and an N-cladding layer. A double heterostructure is formed by forming a layer.
[0012]
A third invention of the present application is the semiconductor light emitting device according to the first invention or the second invention, wherein a plurality of the linear electrodes are arranged radially around the wire bonding portion. The electric current supplied to the wire bonding part is distributed radially and flows uniformly.
[0013]
According to a fourth aspect of the present invention, in a method of manufacturing a semiconductor light emitting device using InGaAlP as an active layer, at least a multilayer reflective layer, an N cladding layer made of InGaAlP, the active layer, and a P made of InGaAlP on a GaAs substrate. a clad layer, a step of sequentially stacked and a window layer made of GaAlAs, said window layer; a hole is formed by etching through the P clad layer and the active layer, in the hole A step of forming an insulating film on a portion where the active layer and the upper layer thereof are removed, and a wire bonding portion is provided on the insulating film, and connected to the wire bonding portion on the surface of the window layer serving as a light extraction surface A method of manufacturing a semiconductor light-emitting device, characterized in that a linear electrode is arranged, and the semiconductor light-emitting device having good luminous efficiency is obtained by such a procedure. It can be easily manufactured.
[0014]
Hereinafter, an embodiment of the present invention will be described with reference to FIG.
[0015]
FIG. 1 is a front sectional view of a semiconductor light emitting device of the present invention, and FIG. 2 is a plan view of the semiconductor light emitting device.
[0016]
The semiconductor light emitting device 1 has a multilayer reflection of a superlattice composed of a buffer layer 2 made of n-type GaAs and 20 pairs of n-type GaAlAs and InAlP on the surface of an n-type GaAs substrate 7 by metal organic vapor phase epitaxy. Layer 3, n-type InGaAlP N-cladding layer 4, non-doped InGaAlP active layer 5, p-type InGaAlP P-cladding layer 6, and p-type GaAlAs window layer 8 are sequentially laminated to form a double heterostructure. .
[0017]
An n-side electrode 11 made of an alloy layer of Au and Ge and an Au layer is formed on the lower surface side of the GaAs substrate 7.
[0018]
Both the N clad layer 4, the P clad layer 6 and the window layer 8 are transparent to the light emitted from the active layer 5.
[0019]
A circular hole 12 is formed in each of the active layer 5 and the P clad layer 6 and the window layer 8 which are the upper layers thereof so as to penetrate each layer. The bottom surface of the hole 12 is formed above the N clad layer 4. The bottom and side surfaces of the hole 12, the insulating film 13 is provided consisting of SiO 2 covering the.
[0020]
A metal circular wire bonding portion 14 made of an alloy layer of Au and Zn and an Au layer is provided on the insulating film 13, and semiconductor light emission centering on the wire bonding portion 14 is provided on the upper surface of the window layer 8. Four linear electrodes 15 arranged radially toward the four corners of the apparatus 1 are provided. The linear electrode 15 is made of the same material as the wire bonding portion 14, and the inner end thereof is connected to the outer peripheral portion of the wire bonding portion 14.
[0021]
The electric current is supplied to the wire bonding unit 14 and flows downward through each layer via the linear electrode 15. The linear electrode 15 allows a current to be distributed over a wide range.
[0022]
Since no current flows through the portion of the active layer 5 where the hole 12 is formed and no light is emitted, a large amount of current can flow through other portions. The light emitted from the active layer 5 is extracted from the window layer 8, but the light obstructed by the linear line electrode 15 is reduced, and a lot of light can be extracted.
[0023]
With this configuration, it is possible to increase the light emission intensity at the peripheral portion and reduce the light shielded from the surface of the window layer 8 to increase the overall light emission efficiency.
[0024]
Next, a manufacturing procedure of the semiconductor light emitting device 1 will be described.
[0025]
First, at least a multilayer reflective layer 3, an N clad layer 4 made of InGaAlP, an active layer 5, and a P clad layer 6 made of InGaAlP on a GaAs substrate 7 by a method similar to the conventional metal organic chemical vapor deposition method. And a window layer 8 made of GaAlAs.
[0026]
Next, a hole 12 that penetrates the window layer 8, the P clad layer 6, and the active layer 5 is formed by etching. This process will be described in detail. First, a pattern is formed with a resist on the surface of the window layer 8 of the wafer on which the double heterostructure is formed by a photolithography process, and the surface excluding the circle formed at the center is covered with a resist film. . Next, the portion not covered with the resist is etched to remove the window layer 8, the P clad layer 6 and the active layer 5, the N clad layer 4 is exposed on the surface, and the resist is removed.
[0027]
Next, an insulating film 13 is formed in the hole 12. The insulating film 13 made of SiO 2 is formed by first forming a SiO 2 film with a film thickness of 400 nm to 500 nm using a CVD apparatus at a temperature of about 400 ° C., and then photolithography to 10 to 20 μm in diameter from the hole 12. This is done by covering a resist pattern having a relatively large size and etching away other portions of SiO 2 .
[0028]
Next, a circular wire bonding portion 14 is provided on the insulating film 13, and linear electrodes 15 connected to the wire bonding portion 14 are radially arranged and fixed on the surface of the window layer 8.
[0029]
In this way, the semiconductor light emitting device 1 can be formed.
[0030]
【The invention's effect】
As described above, according to the present invention, by forming a hole in the active layer, light emission from the lower side of the wire bonding portion is almost eliminated, and light emitted from the active layer is not blocked by the wire bonding portion, Luminous efficiency can be improved. Further, since the linear electrode is used, the current can be uniformly dispersed and the light shielding can be reduced, and the luminous efficiency can be further improved.
[0031]
Furthermore, by arranging a plurality of linear electrodes in a radial manner, the current supplied to the wire bonding portion is radially dispersed and uniformly supplied, and the light emission intensity can be made uniform.
[0032]
Further, by forming a hole that penetrates the window layer, the P-cladding layer, and the active layer by etching, a semiconductor light-emitting device with high luminous efficiency can be easily manufactured.
[Brief description of the drawings]
FIG. 1 is a front sectional view of a semiconductor light emitting device of the present invention. FIG. 2 is a plan view of the semiconductor light emitting device. FIG. 3 is a front sectional view of a semiconductor light emitting device according to a conventional example.
DESCRIPTION OF SYMBOLS 1 Semiconductor light-emitting device 2 Buffer layer 3 Multilayer reflection layer 4 N clad layer 5 Active layer 6 P clad layer 7 GaAs substrate 8 Window layer 11 N side electrode 12 Hole 13 Insulating film 14 Wire bonding part 15 Linear electrode

Claims (4)

ＩｎＧａＡｌＰを活性層とする半導体発光装置において、
前記活性層及びその上側層を貫通して孔部を形成し、この孔部内の活性層及びその上側層を除去した部分に絶縁膜を介してワイヤボンディング部を設け、さらにこのワイヤボンディング部を、光取り出し面となる前記上側層の上面に配置した線状電極に接続したことを特徴とする半導体発光装置。In a semiconductor light emitting device having InGaAlP as an active layer,
A hole is formed through the active layer and the upper layer thereof, and a wire bonding portion is provided via an insulating film in a portion where the active layer and the upper layer in the hole are removed . A semiconductor light-emitting device connected to a linear electrode disposed on the upper surface of the upper layer serving as a light extraction surface. 前記上側層のうち前記活性層と接する層をＰクラッド層とし、前記活性層を挟んで前記Ｐクラッド層と反対側となる層をＮクラッド層とすることでダブルヘテロ構造を構成したことを特徴とする請求項１に記載の半導体発光装置。  Of the upper layer, a layer in contact with the active layer is a P-cladding layer, and a layer on the opposite side of the P-cladding layer with the active layer interposed therebetween is an N-cladding layer, thereby forming a double heterostructure. The semiconductor light emitting device according to claim 1. 前記線状電極は、前記ワイヤボンディング部を中心にして放射状に複数配置されていることを特徴とする請求項１または２に記載の半導体発光装置。  3. The semiconductor light emitting device according to claim 1, wherein a plurality of the linear electrodes are radially arranged around the wire bonding portion. 4. ＩｎＧａＡｌＰを活性層とする半導体発光装置の製造方法において、
ＧａＡｓ基板上に、少なくとも多層反射層と、ＩｎＧａＡｌＰからなるＮクラッド層と、前記活性層と、ＩｎＧａＡｌＰからなるＰクラッド層と、ＧａＡｌＡｓからなる窓層とを順次積層して形成する工程と、
前記窓層、前記Ｐクラッド層及び前記活性層を貫通する孔部をエッチングにより形成する工程と、
前記孔部内の活性層及びその上側層を除去した部分に絶縁膜を形成する工程と、
前記絶縁膜の上部にワイヤボンディング部を設けるとともに、光取り出し面となる前記窓層の表面に前記ワイヤボンディング部に接続した線状電極を配置することを特徴とする半導体発光装置の製造方法。In a method for manufacturing a semiconductor light emitting device using InGaAlP as an active layer,
A step of sequentially laminating at least a multilayer reflective layer, an N clad layer made of InGaAlP, the active layer, a P clad layer made of InGaAlP, and a window layer made of GaAlAs on a GaAs substrate;
Forming a hole through the window layer, the P-cladding layer and the active layer by etching;
Forming an insulating film in a portion where the active layer and the upper layer in the hole are removed ; and
A method of manufacturing a semiconductor light emitting device, comprising: providing a wire bonding portion on the insulating film; and disposing a linear electrode connected to the wire bonding portion on a surface of the window layer serving as a light extraction surface.
JP2001341682A 2001-11-07 2001-11-07 Semiconductor light emitting device and manufacturing method thereof Expired - Fee Related JP4058937B2 (en)

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