CN116960238A - LED chip and preparation method thereof - Google Patents
LED chip and preparation method thereof Download PDFInfo
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- CN116960238A CN116960238A CN202310916033.XA CN202310916033A CN116960238A CN 116960238 A CN116960238 A CN 116960238A CN 202310916033 A CN202310916033 A CN 202310916033A CN 116960238 A CN116960238 A CN 116960238A
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- 238000002360 preparation method Methods 0.000 title abstract description 19
- 238000007747 plating Methods 0.000 claims abstract description 62
- 229910052751 metal Inorganic materials 0.000 claims abstract description 58
- 239000002184 metal Substances 0.000 claims abstract description 56
- 238000000034 method Methods 0.000 claims abstract description 32
- 239000011248 coating agent Substances 0.000 claims abstract description 20
- 238000000576 coating method Methods 0.000 claims abstract description 20
- 239000013077 target material Substances 0.000 claims abstract description 13
- 230000007613 environmental effect Effects 0.000 claims abstract description 10
- 229920002120 photoresistant polymer Polymers 0.000 claims description 33
- 230000001276 controlling effect Effects 0.000 claims description 23
- 238000004519 manufacturing process Methods 0.000 claims description 18
- 238000010884 ion-beam technique Methods 0.000 claims description 15
- 238000005507 spraying Methods 0.000 claims description 10
- 239000003292 glue Substances 0.000 claims description 8
- 238000011001 backwashing Methods 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 7
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 238000004026 adhesive bonding Methods 0.000 claims description 5
- 239000007921 spray Substances 0.000 claims description 5
- 230000001105 regulatory effect Effects 0.000 claims description 3
- 230000008569 process Effects 0.000 abstract description 16
- 238000001883 metal evaporation Methods 0.000 abstract description 10
- 230000000694 effects Effects 0.000 abstract description 7
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 238000012360 testing method Methods 0.000 description 18
- 239000000758 substrate Substances 0.000 description 14
- 239000000463 material Substances 0.000 description 12
- 238000004458 analytical method Methods 0.000 description 11
- 239000000243 solution Substances 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- 238000007740 vapor deposition Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 6
- 238000001704 evaporation Methods 0.000 description 6
- 230000008020 evaporation Effects 0.000 description 6
- 238000009533 lab test Methods 0.000 description 6
- 229910052594 sapphire Inorganic materials 0.000 description 6
- 239000010980 sapphire Substances 0.000 description 6
- 239000010931 gold Substances 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 4
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- 239000004065 semiconductor Substances 0.000 description 3
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- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
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- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
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- H01L33/005—
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- H01L33/36—
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The application provides a preparation method of an LED chip and the LED chip, wherein the method comprises the following steps: placing a wafer to be evaporated on a plating pot; the angle of the plating pot relative to the horizontal plane is adjusted to a preset angle, and under the preset environmental condition, a metal target material is attached to the surface of the wafer to be evaporated in a steam mode, so that an initial electrode is obtained, wherein the preset angle is 30-50 degrees; and stripping the initial electrode to obtain the required target electrode. The application can solve the problem of poor metal coating effect in the existing metal evaporation process, is beneficial to improving the product yield and prolonging the service life of the product.
Description
Technical Field
The application relates to the technical field of semiconductor preparation, in particular to a preparation method of an LED chip and the LED chip.
Background
An LED, also known as a light emitting diode, is a solid state semiconductor device that directly converts electricity into light, and its critical structure is a semiconductor chip. The LED chip has the advantages of small volume, low power consumption, long service life, environmental protection, durability and higher light quality.
At present, in the manufacturing process of metal electrodes of an LED chip, firstly, an electrode pattern is manufactured on a wafer through a yellow light process, then, the surface is cleaned through a plasma photoresist remover, then, a target material is heated at a high temperature in a metal evaporator to enable the target material to be attached to the surface of the wafer in a steam mode, the pattern is manufactured through photoresist, finally, the photoresist is stripped to remove superfluous metal on the surface of the target material, the remained metal is the required electrode, in the evaporation process, a plurality of metal sources are required to be used as the target material for evaporation, and because the metal sources in the earlier stage are more active, au is often used as the final target material to form an Au metal layer to wrap other metal layers and be attached to the surface of the wafer, and the metal cladding property of the LED chip generally refers to the cladding property of Au on the metal elements of the front layer.
The existing plating pot has the problems that the placement angle is generally 0 degree relative to the horizontal plane, the position of the wafer for receiving the metal particles is single, the metal particles are difficult to reach the attachment position required by the process, and metal oxidation and transition caused by poor Au coating property exist.
Disclosure of Invention
Based on the above, the application aims to provide a preparation method of an LED chip and the LED chip so as to solve the defects in the prior art.
In order to achieve the above object, the present application provides a method for manufacturing an LED chip, the method comprising:
placing a wafer to be evaporated on a plating pot;
the angle of the plating pot relative to the horizontal plane is adjusted to a preset angle, and under the preset environmental condition, a metal target material is attached to the surface of the wafer to be evaporated in a steam mode, so that an initial electrode is obtained, wherein the preset angle is 30-50 degrees;
and stripping the initial electrode to obtain the required target electrode.
The beneficial effects of the application are as follows: the wafer to be evaporated is placed on the plating pot, and then the included angle of the plating pot relative to the horizontal plane is adjusted to be 30-50 degrees, so that the angle of the wafer to be evaporated relative to the horizontal plane is 30-50 degrees, and then metal evaporation operation is carried out, so that a target electrode is formed on the surface of the wafer to be evaporated, the problem that the metal coating effect is poor in the existing metal evaporation process is solved, the product yield is improved, and the service life of the product is prolonged.
Preferably, the optimum value of the preset angle is 40-45 degrees.
Preferably, the metal target is at least one of Cr, al, ti, pt, ni, au.
Preferably, the step of adjusting the angle of the plating pot to a preset angle includes:
the metal arm position of the plating pot is adjusted to control the plating pot to be adjusted to a preset angle.
Preferably, before the wafer to be evaporated is placed on the plating pot, the method further includes:
sequentially gluing, exposing and developing the current wafer to manufacture an electrode pattern on the current wafer;
and removing residual photoresist on the current wafer attached with the electrode pattern by using a plasma photoresist remover, and cleaning the current wafer to obtain the wafer to be evaporated.
Preferably, after the desired target electrode is obtained, the method includes:
focusing the ion beam out of the ion beam by utilizing an electric lens, and bombarding the surface of the target electrode by using the ion beam so as to obtain the appearance condition of the cross section of the target electrode.
Preferably, the step of applying the adhesive to the current wafer includes:
adsorbing the current wafer on a sucker;
controlling the sucker to rotate at a first rotating speed, spraying and stripping photoresist by using the rubber head, controlling the sucker to rotate at a second rotating speed after spraying for a first preset time, and controlling the rubber head to retract to spray for a second preset time;
and after the spraying is finished, controlling the sucker to rotate at a third rotating speed, and performing back washing operation on the current wafer.
Preferably, the step of exposing the current wafer includes:
and placing the current wafer in a step type exposure machine, and regulating and controlling each parameter of the step type exposure machine to expose the current wafer.
Preferably, the step of developing the current wafer includes:
controlling the rotating speed of the sucker in a fourth range, and setting the sucker into a shaking state by using a shaking device in a preset cycle period;
and coating the developing solution on the current wafer on the sucker, and controlling the sucker to rotate for a third preset time at a fifth rotating speed after coating is finished so as to throw the developing solution on the current wafer.
In order to achieve the above purpose, the application also provides an LED chip prepared by the preparation method of the LED chip.
Additional aspects and advantages of the application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the application.
Drawings
Fig. 1 is a flowchart of a method for manufacturing an LED chip according to a first embodiment of the present application;
FIG. 2 is a cross-sectional view of an LED chip according to test example 1 of the present application;
FIG. 3 is a cross-sectional view of an LED chip according to test example 2 of the present application;
FIG. 4 is a cross-sectional view of the FIB of the LED chip provided in test example 3 of the present application;
fig. 5 is a FIB cross-sectional analysis view of an LED chip provided in a comparative example of the present application.
Description of main reference numerals:
the application will be further described in the following detailed description in conjunction with the above-described figures.
Detailed Description
In order that the application may be readily understood, a more complete description of the application will be rendered by reference to the appended drawings. Several embodiments of the application are presented in the figures. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
It will be understood that when an element is referred to as being "mounted" on another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "left," "right," and the like are used herein for illustrative purposes only.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
Referring to fig. 1, a method for manufacturing an LED chip according to a first embodiment of the present application includes the following steps:
step S101, placing a wafer to be evaporated on a plating pot;
the plating pot is located in the evaporation machine, a metal source is arranged in the evaporation machine, the plating pot is located above the metal source, the emitting direction of the metal source is vertically upwards, and it can be understood that the metal source is placed in the crucible, the crucible is located below a cavity of the evaporation machine, and in other embodiments, the positions of the crucible and the metal source can be adjusted adaptively according to practical conditions.
Step S102, adjusting the angle of the plating pot to a preset angle, and attaching a metal target material to the surface of the wafer to be evaporated in a steam mode under a preset environmental condition to obtain an initial electrode, wherein the preset angle is the angle between the plating pot and the horizontal plane, and the preset angle is 30-50 degrees;
the preset environmental condition is a vacuum high-temperature closed space, and the metal target is at least one of Cr, al, ti, pt, ni, au, specifically, the metal target is heated at high temperature, so that the metal target is attached to the surface of the wafer to be evaporated in a steam mode.
When the angle of the plating pot relative to the horizontal plane is smaller than 30 degrees, the side wall of the metal electrode is steeper and even is close to the vertical state, the metal is not easy to strip, and the residual gold is extremely easy to occur; when the angle of the plating pot relative to the horizontal plane is larger than 50 degrees, the metal electrode side plating is serious, and although the corresponding cladding effect is better, the metal side plating is serious, so that the whole luminous area of the LED chip is reduced, the yield of the chip is reduced, and even metal migration and leakage risks can occur.
And step S103, stripping the initial electrode to obtain the required target electrode.
And stripping off redundant metal from the initial electrode, thereby obtaining the required target electrode. It can be understood that before performing the metal evaporation operation on the wafer to be evaporated, an electrode pattern needs to be made on the obtained current wafer, and during the metal evaporation process, metal is evaporated on the entire surface of the wafer to be evaporated, so that in order to obtain an electrode corresponding to the electrode pattern, the initial electrode needs to be stripped, so that the target electrode, that is, the electrode corresponding to the electrode pattern, is obtained.
Through the steps, the wafer to be evaporated is placed on the plating pot, then the included angle of the plating pot relative to the horizontal plane is adjusted to be 30-50 degrees, so that the angle of the wafer to be evaporated relative to the horizontal plane is 30-50 degrees, metal evaporation operation is performed, a target electrode is formed on the surface of the wafer to be evaporated, the problem that the metal coating effect is poor in the existing metal evaporation process is solved, the product yield is improved, and the service life of the product is prolonged.
In some of these embodiments, the metal target is at least one of Cr, al, ti, pt, ni, au.
It is understood that in other embodiments, the metal target may be Cr, cr and Al, or Al, ti and Pt.
In some of these embodiments, the step of adjusting the angle of the plating pot to a preset angle comprises:
the metal arm position of the plating pot is adjusted to control the plating pot to be adjusted to a preset angle.
In this coating by vaporization machine, the plating pot is controlled through the metal arm, the metal arm is the electrical equipment who is used for holding the hanging plating pot, the metal arm is used for the adjustment the angle of plating pot for the horizontal plane, the metal arm passes through the mounting disc and is connected with the organism of coating by vaporization machine, be connected with the guide rail on the mounting disc, the guide rail encircles and extends to form, the one end of metal arm is connected with the slider, the slider with guide rail sliding connection, the slider drives the metal arm is followed the guide rail slides, thereby makes the plating pot can rotate, and can understand, the metal source is located the guide rail center under, through the slider is followed the guide rail slides, so that the plating pot can rotate, guarantees treat the coating by vaporization wafer on the plating pot is even.
In some embodiments, before the wafer to be evaporated is placed on the plating pot, the method further includes:
sequentially gluing, exposing and developing the current wafer to manufacture an electrode pattern on the current wafer;
in the photoresist coating operation, the photoresist coated on the current wafer is a stripping photoresist, the stripping photoresist is also called negative photoresist, and then the current wafer coated with the stripping photoresist is sequentially subjected to exposure and development operations so as to manufacture an electrode pattern on the current wafer.
In the process of coating photoresist, photoresist is divided into positive photoresist and negative photoresist. The metal electrode is made of negative photoresist, also called stripping photoresist. The glue thickness range of the glue coating in the application is 2.5um-8um.
In some embodiments, the step of applying the paste to the current wafer includes:
adsorbing the current wafer on a sucker;
controlling the sucker to rotate at a first rotating speed, spraying and stripping photoresist by using the rubber head, controlling the sucker to rotate at a second rotating speed after spraying for a first preset time, and controlling the rubber head to retract to spray for a second preset time;
and after the spraying is finished, controlling the sucker to rotate at a third rotating speed, and performing back washing operation on the current wafer.
The gluing process comprises the following steps:
the wafer is adsorbed on the sucker, the rotating speed is accelerated from 0 to 1000rpm-2000rpm, and the swinging speed of the gluing arm is controlled to be 10deg/s-50deg/s so as to glue the wafer.
In other embodiments, the wafer is dynamically glued, specifically, the photoresist is sprayed by the photoresist head at the sucker rotation speed of 800rpm-3500rpm, so that the glue consumption is less compared with that of static glue coating, and the uniformity of the glue film can be improved;
instantly reducing the speed to enable the adhesive film to shrink inwards, reducing edge adhesive piling abnormality, and controlling the rotating speed of the sucker to be 300rpm-1000rpm;
rotating at a constant speed, wherein the rotating speed is set according to the required glue thickness, and the rotating speed of the sucker is controlled to be 1500rpm-5000rpm;
and (3) opening back washing and spray washing for 1-5 s, cleaning the residual photoresist on the back, and controlling the rotating speed to be 2000-3000 rpm, wherein the back washing is performed by using an acetone solution (the concentration is more than or equal to 99% and the flow is 15-60 ml/min).
In some embodiments, the exposing the current wafer includes:
and placing the current wafer in a step type exposure machine, and regulating and controlling each parameter of the step type exposure machine to expose the current wafer.
The exposure process is specifically as follows:
the exposure procedure uses a step-by-step exposure machine, and the manufactured pattern is carved out by a photomask and then is exposed on the exposure machine. The illumination of the machine is controlled to 8000W/m 2 -13000W/m 2 The exposure dose is controlled at 160mj/cm 2 -320mj/cm 2 The temperature of the objective lens is controlled to be 22+/-0.1 ℃, the temperature of the gas bath is controlled to be 22+/-5 ℃, the temperature in the chamber is controlled to be 21.5-23.5 ℃, the relative pressure of the objective lens is controlled to be 100+/-10% pa, the temperature of factory pure water is controlled to be 17-22 ℃, the pure water flow is controlled to be 18-30L/min, and the circulating water flow is controlled to be 18-30L/min.
In some embodiments, the developing the current wafer includes:
controlling the rotating speed of the sucker in a fourth range, and setting the sucker into a shaking state by using a shaking device in a preset cycle period;
and coating the developing solution on the current wafer on the sucker, and controlling the sucker to rotate for a third preset time at a fifth rotating speed after coating is finished so as to throw the developing solution on the current wafer.
The developing process is specifically as follows:
the developing process is to etch the photoresist by using a developing solution (tetramethyl ammonium hydroxide developing solution with the component content of 2.38 percent concentration), and the developing process is as follows:
the wafer is adsorbed on the sucker, the rotating speed is accelerated from 0 to 1000rpm-2000rpm, and the swinging speed of the developing arm is controlled to be 10deg/s-50deg/s;
spraying the developing solution, wherein the rotating speed of the sucker is between 0rpm and 50rpm, and the flow rate of the developing solution is between 200ml/min and 400ml/min.
In other embodiments, the wafer is dynamically developed, the chuck bundling can be controlled at 10rpm-60rpm, and 2-3 steps of one cycle can be set to present the chuck shaking state, so that the wafer is more fully developed;
the developing solution is thrown away at a high speed, and the rotating speed is controlled to be 1500rpm-3000rpm;
flushing the residual developer to brush the residual developer cleanly, wherein the flow rate of DI water (deionized water) is 300ml/min-500ml/min;
opening back washing and spray washing for 1s-5s, cleaning the residual developer on the back, wherein the rotating speed is 2000rpm-3000rpm, DI water is used for back washing, and the flow is 30ml/min-100ml/min;
the plasma photoresist remover cleans the wafer by glow excitation of oxygen ions, thereby removing residual photoresist on the surface of the wafer. The radio frequency power of the machine is 600w-1000w, and the oxygen flow is 200sccm-600sccm;
wafer cleaning, also known as water washing, is the removal of impurities from the wafer surface. DI water flow rate is 500ml/min-900ml/min, and water resistance value is 0.2M omega cm-0.8M omega cm.
And removing residual photoresist on the current wafer attached with the electrode pattern by using a plasma photoresist remover, and cleaning the current wafer to obtain the wafer to be evaporated.
And removing residual stripping photoresist in the electrode channel by using a plasma photoresist remover, and finally removing impurities on the surface of the current wafer by cleaning, thereby obtaining the wafer to be evaporated for subsequent metal evaporation operation.
The process of vapor deposition of the wafer is specifically as follows:
vacuum value in the evaporation cavity is 0-5E-06Pa, and vacuumizing and back pressure exist in the whole process; the metal in the crucible is plated on the surface of the wafer in the form of vapor at high temperature, and the plating rate of Cr is thatThe vapor deposition thickness is->Between them; the plating rate of Al is->The vapor deposition thickness is->Between them; the plating rate of Ti is->The vapor deposition thickness is->Between them; the plating rate of Pt is->The vapor deposition thickness is->Between them; ni plating rate is->The vapor deposition thickness is->Between them; the plating rate of Au is->Between each other, the vapor deposition thickness isBetween them; plating rates and thicknesses of different metal elements used for vapor plating are different, and the sequence of vapor plating of different metals is controlled in the vacuum cavity.
In some of these embodiments, after the desired target electrode is obtained, the method includes:
focusing the ion beam out of the ion beam by utilizing an electric lens, and bombarding the surface of the target electrode by using the ion beam so as to obtain the appearance condition of the cross section of the target electrode.
The target electrode is subjected to FIB section analysis by using a laboratory test instrument-a dual-beam electron microscope, FIB (Focused lon beam) is short for focusing ion beam technology, and an electric lens is used for focusing ion beams into ion beams with very small sizes to bombard the surface of a material, so that stripping, deposition, injection, cutting and modification of the material are realized.
Specifically, an ion beam is focused into an ion beam with a very small size through an electric lens, and the ion beam is utilized to bombard the surface of the target electrode, so that stripping, deposition, injection, cutting and modification of the target electrode are realized, and the appearance condition of the section of the target electrode is obtained.
It should be noted that the above implementation procedure is only for illustrating the feasibility of the present application, but this does not represent that the preparation method of the LED chip of the present application is only one implementation procedure, and instead, the preparation method of the LED chip of the present application can be incorporated into the feasible implementation of the present application.
The application is further illustrated by the following specific test examples:
test example 1
The preparation method of the LED chip provided in the test example 1 comprises the following steps:
step S201, placing a wafer to be evaporated on a plating pot;
step S202, adjusting the angle of the plating pot to a preset angle, and attaching a metal target material to the surface of the wafer to be evaporated in a steam mode under a preset environmental condition to obtain an initial electrode, wherein the preset angle is the angle between the plating pot and the horizontal plane, and the preset angle is 32 degrees;
and step S203, stripping the initial electrode to obtain the required target electrode.
The LED chip was prepared by this preparation process, and FIB cross-section analysis was performed on the target electrode using a laboratory test instrument-dual beam electron microscope to obtain a relevant cross-section analysis chart, which is shown in fig. 2.
Test example 2
The preparation method of the LED chip provided in the test example 2 comprises the following steps:
step S301, placing a wafer to be evaporated on a plating pot;
step S302, adjusting the angle of the plating pot to a preset angle, and attaching a metal target material to the surface of the wafer to be evaporated in a steam mode under a preset environmental condition to obtain an initial electrode, wherein the preset angle is the angle between the plating pot and a horizontal plane, and the preset angle is 38 degrees;
and step S303, stripping the initial electrode to obtain the required target electrode.
The LED chip was prepared by this preparation process, and FIB cross-section analysis was performed on the target electrode using a laboratory test instrument-dual beam electron microscope to obtain a relevant cross-section analysis chart, which is shown in fig. 3.
Test example 3
The preparation method of the LED chip provided in the test example 3 comprises the following steps:
step S401, placing a wafer to be evaporated on a plating pot;
step S402, adjusting the angle of the plating pot to a preset angle, and attaching a metal target material to the surface of the wafer to be evaporated in a steam mode under a preset environmental condition to obtain an initial electrode, wherein the preset angle is the angle between the plating pot and a horizontal plane, and the preset angle is 45 degrees;
and S403, stripping the initial electrode to obtain the required target electrode.
The LED chip was prepared by this preparation process, and FIB cross-section analysis was performed on the target electrode using a laboratory test instrument-dual beam electron microscope to obtain a relevant cross-section analysis chart, which is shown in fig. 4.
Comparative example
The preparation method of the LED chip provided by the comparative example comprises the following steps:
step S501, placing a wafer to be evaporated on a plating pot;
step S502, adjusting the angle of the plating pot to a preset angle, and attaching a metal target material to the surface of the wafer to be evaporated in a steam mode under a preset environmental condition to obtain an initial electrode, wherein the preset angle is the angle between the plating pot and the horizontal plane, and the preset angle is 50-60 degrees;
and step S503, stripping the initial electrode to obtain the required target electrode.
The LED chip was prepared by this preparation process, and FIB cross-section analysis was performed on the target electrode using a laboratory test instrument-dual beam electron microscope to obtain a relevant cross-section analysis chart, which is shown in fig. 5.
It can be understood that 10 x 24mil LED chips were prepared in test 1-test 3 and comparative examples, 300 LED chips were extracted, and FIB cross-section analysis was performed on the electrodes on each LED chip using a laboratory test instrument-dual beam electron microscope, and the ratio of the optimum conductivity of the electrodes on the LED chips of test 1-test 3 and comparative examples was calculated, and specific test results are shown in the following table:
| electrode ratio with excellent conductivity | |
| Test example 1 | 92.1％ |
| Test example 2 | 93.5％ |
| Test example 3 | 95.7％ |
| Comparative example | 89.2％ |
From the above results, it is known that when the angle of the plating pot relative to the horizontal plane is 30 ° -50 °, the metal coating effect of the wafer to be vapor deposited after vapor deposition is improved, and the conductivity of the electrode obtained therewith is also better, and when the angle of the plating pot relative to the horizontal plane is gradually increased within 30 ° -50 °, the metal coating effect is also improved.
Based on the above, the LED chip prepared by the preparation method of the LED chip provided by the application has the advantages that the included angle of the plating pot relative to the horizontal plane is adjusted to be 30-50 degrees, so that the angle of the wafer to be evaporated relative to the horizontal plane is 30-50 degrees, then metal evaporation operation is carried out, the formation of the target electrode on the surface of the wafer to be evaporated is realized, the problem that the metal coating effect is poor in the existing metal evaporation process is solved, the product yield is improved, and the service life of the product is prolonged.
The LED chip provided by the second embodiment of the application is prepared by the preparation method of the LED chip in the first embodiment. The LED chip comprises a substrate, an epitaxial layer, a current blocking layer, a current expansion layer, an ohmic contact layer and an electrode which are sequentially stacked from bottom to top, wherein the FIB section of the electrode is of a trapezoid structure.
The angle of the waist of the FIB section of the electrode relative to the lower bottom is 60-80 degrees, and the electrode is made of at least one of Cr, al, ti, pt, ni, au materials.
In this embodiment, the substrate is connected to the epitaxial layer through a window layer, and the substrate is a sapphire substrate or SiO 2 The substrate is one of a sapphire composite substrate, a silicon carbide substrate, a gallium nitride substrate and a zinc oxide substrate, specifically, the substrate is a sapphire substrate, sapphire is the most commonly used GaN-based LED substrate material at present, and most GaN-based LEDs in the market use sapphire as the substrate material. The sapphire substrate has the greatest advantages of mature technology, good stability and low production cost.
In this embodiment, the epitaxial layer includes a first confinement layer, a quantum well layer, and a second confinement layer stacked in sequence, the quantum well layer is connected with the window layer through the first confinement layer, and the quantum well layer is connected with the current spreading layer through the second confinement layer, where edges of the first confinement layer, the quantum well layer, and the second confinement layer are flush, and it can be understood that the current spreading layer is located at a central portion of the second confinement layer.
In this embodiment, the material of the window layer is P-GaP, the material of the first confinement layer is P-AlInP, the material of the second confinement layer is N-AlInP, the material of the current spreading layer is N-AlGaInP, and the material of the ohmic contact layer is N-GaAs.
In this embodiment, the thickness of the current blocking layer is 0.3um, and the current blocking layer comprises SiO 2 、Al 2 O 3 、Ti 3 O 5 It will be appreciated that a photoresist is coated on the epitaxial layer and then the exposure, development and etching operations are sequentially performed to form the desired current blocking layer on the epitaxial layer.
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present application. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The foregoing examples illustrate only a few embodiments of the application and are described in detail herein without thereby limiting the scope of the application. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the application, which are all within the scope of the application. Accordingly, the scope of the application should be assessed as that of the appended claims.
Claims (10)
1. A method of manufacturing an LED chip, the method comprising:
placing a wafer to be evaporated on a plating pot;
the angle of the plating pot relative to the horizontal plane is adjusted to a preset angle, and under the preset environmental condition, a metal target material is attached to the surface of the wafer to be evaporated in a steam mode, so that an initial electrode is obtained, wherein the preset angle is 30-50 degrees;
and stripping the initial electrode to obtain the required target electrode.
2. The method of manufacturing an LED chip of claim 1, wherein said predetermined angle has an optimum value of 40 ° -45 °.
3. The method of manufacturing an LED chip of claim 1, wherein said metal target is at least one of Cr, al, ti, pt, ni, au.
4. The method of manufacturing an LED chip of claim 1, wherein said step of adjusting the angle of said plating pot to a preset angle comprises:
the metal arm position of the plating pot is adjusted to control the plating pot to be adjusted to a preset angle.
5. The method of manufacturing an LED chip of claim 1, wherein said method further comprises, prior to said placing the wafer to be evaporated on the plating pot:
sequentially gluing, exposing and developing the current wafer to manufacture an electrode pattern on the current wafer;
and removing residual photoresist on the current wafer attached with the electrode pattern by using a plasma photoresist remover, and cleaning the current wafer to obtain the wafer to be evaporated.
6. The method of manufacturing an LED chip of claim 1, wherein after said obtaining a desired target electrode, said method comprises:
focusing the ion beam out of the ion beam by utilizing an electric lens, and bombarding the surface of the target electrode by using the ion beam so as to obtain the appearance condition of the cross section of the target electrode.
7. The method of manufacturing an LED chip of claim 5, wherein said step of applying glue to said current wafer comprises:
adsorbing the current wafer on a sucker;
controlling the sucker to rotate at a first rotating speed, spraying and stripping photoresist by using the rubber head, controlling the sucker to rotate at a second rotating speed after spraying for a first preset time, and controlling the rubber head to retract to spray for a second preset time;
and after the spraying is finished, controlling the sucker to rotate at a third rotating speed, and performing back washing operation on the current wafer.
8. The method of manufacturing an LED chip of claim 7, wherein said exposing the current wafer comprises:
and placing the current wafer in a step type exposure machine, and regulating and controlling each parameter of the step type exposure machine to expose the current wafer.
9. The method of manufacturing an LED chip of claim 8, wherein said developing the current wafer comprises:
controlling the rotating speed of the sucker in a fourth range, and setting the sucker into a shaking state by using a shaking device in a preset cycle period;
and coating the developing solution on the current wafer on the sucker, and controlling the sucker to rotate for a third preset time at a fifth rotating speed after coating is finished so as to throw the developing solution on the current wafer.
10. An LED chip prepared by the method of preparing an LED chip according to any one of claims 1 to 9.
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| CN202310916033.XA CN116960238A (en) | 2023-07-25 | 2023-07-25 | LED chip and preparation method thereof |
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| CN202310916033.XA CN116960238A (en) | 2023-07-25 | 2023-07-25 | LED chip and preparation method thereof |
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