CN108807147A - A kind of preparation method of novel multi-layer compound pattern Sapphire Substrate - Google Patents
A kind of preparation method of novel multi-layer compound pattern Sapphire Substrate Download PDFInfo
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- CN108807147A CN108807147A CN201810637647.3A CN201810637647A CN108807147A CN 108807147 A CN108807147 A CN 108807147A CN 201810637647 A CN201810637647 A CN 201810637647A CN 108807147 A CN108807147 A CN 108807147A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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Abstract
The present invention discloses a kind of preparation method of novel multi-layer compound pattern Sapphire Substrate, and method is that certain thickness silica (SiO is sequentially depositing in a piece of bright and clean sapphire substrate wafer using optical coating technology2) film, zirconium oxide (ZrO2) film and titanium oxide (TiO2) film, then the ultraviolet positive photoresist of one layer of even spread on it, then carries out step printing and developing procedure；ICP dry etchings are carried out again, are cleaned after the completion of etching, are finally deposited one layer of aluminium nitride (AlN) film on it, are obtained MULTILAYER COMPOSITE graphical sapphire substrate chip.The present invention is successively decreased by three kinds of refractive index the combination of thin-film material successively first, is increased light extraction order of reflection, is kept total reflection phenomenon odds minimum, so as to effectively improve the vertical luminous flux of Mini-LED.The LED chip brightness of relative usage traditional graph Sapphire Substrate improves about 10% or more, secondly by cvd nitride aluminium film, AlN films can significantly reduce the warpage in epitaxial growth, gallium nitride is set to be grown on laminated film, the defect concentration of gallium nitride is further decreased, the output power of LED chip can be improved 2% or more.
Description
Technical field
The present invention relates to a kind of preparation methods of Sapphire Substrate, more particularly, to a kind of novel multi-layer compound patternization indigo plant
The preparation method of jewel substrate.
Background technology
Mini-LED is the research hotspot of third generation semiconductor lighting devices, by the very big pass of countries in the world researcher
Note.Mini-LED be self-luminous display technology, using micromation LED structure of arrays, have high brightness, high contrast, wide colour gamut,
The advantages such as wide viewing angle, fast-response time, frivolous and low power consumption.The application range of Mini-LED is very extensive, in every field
Suffer from wide foreground.
Common graphical sapphire substrate cannot be satisfied the requirement of Mini-LED small sizes and high brightness, in Sapphire Substrate
It Material growth GaN homepitaxy material a series of problems, such as there are lattice mismatch and thermal stress mismatches, generates in the epitaxial layer notable
Defect, while can also be created great difficulties to subsequent device manufacturing process, seriously affect packaging luminous efficiency and
Service life.Although graphical sapphire substrate technology can reduce the lattice mismatch and thermal stress mismatch of epitaxial material, LED is improved
The light extraction efficiency of device, but graphical sapphire substrate light extraction order of reflection is few, the probability being totally reflected is big.And people
Continuous increase to large scale high brightness LED package device requirement, traditional at present graphical sapphire substrate structure and preparation
Method cannot meet the requirement of LED component light extraction efficiency.New Sapphire Substrate structure preparation method must be used with full
The requirement of sufficient people.
Invention content
For existing graphical sapphire substrate substrate fabrication method there are the problem of, technical scheme of the present invention is such as
Under：
Using optical coating technology certain thickness silica is sequentially depositing in a piece of bright and clean sapphire substrate wafer
(SiO2) film, zirconium oxide (ZrO2) film and titanium oxide (TiO2) film, the then ultraviolet positive light of one layer of even spread on it
Then photoresist carries out step printing and developing procedure；ICP dry etchings are carried out again, are cleaned after the completion of etching, are finally existed
One layer of aluminium nitride (AlN) film is deposited thereon, obtains MULTILAYER COMPOSITE graphical sapphire substrate chip；
Further, the sapphire substrate wafer is to pass through acetone successively to scrub 5-10 minutes, 90 DEG C of dense H2SO4
With H2O2Volume ratio is 3:1 or 5:2 mixed solution cleans 10-15 minutes, and 80 DEG C of deionized waters are cleaned 8-10 minutes, and 25 DEG C are gone
Ionized water cleans 5-10 minutes, high speed drying 3-10 minutes；
Further, the preparation method of silicon oxide film is that sapphire substrate wafer is put into optical coating system vacuum chamber
On workpiece plate, silica coating materials is loaded onto, opens dry pump and lobe pump, film thickness, setting are measured by optical thick film monitor
Film thickness is 0.1-1.0 μm, when vacuum degree reaches 8.0X10-4After Pa, electron gun general supply and filament switch, heater current are opened
It is adjusted to 100-800mA.Electron-beam voltage reaches 200-1000V, and radio-frequency power reaches 100-1000W, bombardment membrane material surface into
Row evaporation, accelerating potential are set as 100-2000V, so that membrane material is deposited on substrate wafer and form fine and close silicon oxide film；
Further, the preparation method of zirconia film is that silica coating materials is passed through optics with being changed to zirconium oxide coating materials
Thickness monitoring instrument measures film thickness, sets film thickness as 0.1-1.5 μm, when vacuum degree reaches 8.0X10-4After Pa, heater current
It is adjusted to 200-1000mA.Electron-beam voltage reaches 100-1000V, and radio-frequency power reaches 100-1500W, bombardment membrane material surface into
Row evaporation, accelerating potential are set as 200-1000V, so that membrane material is deposited on substrate wafer and form fine and close zirconia film；
Further, the preparation method of thin film of titanium oxide is that zirconium oxide coating materials is passed through optics with being changed to titanium oxide coating materials
Thickness monitoring instrument measures film thickness, sets film thickness as 0.1-2.0 μm, when vacuum degree reaches 8.0X10-4After Pa, heater current
It is adjusted to 100-1500mA.Electron-beam voltage reaches 100-1000V, and radio-frequency power reaches 100-2000W, bombardment membrane material surface into
Row evaporation, accelerating potential are set as 100-1000V, so that membrane material is deposited on substrate wafer and form fine and close thin film of titanium oxide；
Further, the gluing is coated in MULTILAYER COMPOSITE graphical sapphire substrate wafer surface using glue spreader
A layer thickness is 1.0-2.4 μm of positive ultraviolet photoresist, is exposed using certain size photolithography plate, and the time for exposure is
100ms-360ms normally develops to the chip after exposure；
Further, the ICP dry etchings are to carry out plasma dry etch to the chip after development, are divided into two
A step, the first step, upper electrode power 100-2000W, lower electrode power 100-1500W, BCL3Flow is 10-
120sccm, CHF3Flow is 10-100sccm, and etching etching temperature is 20-45 DEG C, when helium pressure is that 1-10mTorr is etched
Between be 300-1000S.Second step, upper electrode power 200-2000W, lower electrode power 200-1800W, BCL3Flow is
10-100sccm, CHF3Flow is 10-100sccm, and etching etching temperature is 20-40 DEG C, and helium pressure etches for 1-10mTorr
Time is 300-1500S；
Further, cleaning step after the etching, 40-70 DEG C of still type SYNPERONIC PE/F68 with
Sodium citrate molar ratio is 1:3 or 1:4 mixed solution ultrasonic cleaning 10-15 minutes, ultrasonic frequency 50-90Hz, 25
DEG C deionized water elutes 5-8 minute, and nitrogen purges 5-10 minutes, up to being completely dried；
Further, the aluminum nitride thin membrane preparation method is anti-for the substrate wafer after cleaning is placed in sputter coating machine
It answers on the anode plate of room, round Al targets are installed on the indoor target platform of reaction, and it is 2-5cm to fix and adjust target-substrate distance, opens and divides
Vacuum is evacuated to 5.0 × 10 by son pump-4Substrate wafer is heated to 50-100 DEG C, argon working gas is passed through into reative cell by Pa,
Gas flow is 10-150SCCM, reaction gas nitrogen, and gas flow 10-300SCCM makes to protect to stable gas pressure in reative cell
It holds in 0.4-0.8Pa, after reacting indoor gas pressure intensity and stablizing, removes baffle, start formal sputtering, sputtering power is
100-2000W, sputtering time are 5-30 minutes, thickness 10-60nm, and it is brilliant that MULTILAYER COMPOSITE graphical sapphire substrate is prepared
Piece；
The present invention innovation be：The present invention is successively decreased by three kinds of refractive index the combination of thin-film material successively first, is increased
Light extraction order of reflection is added, has kept total reflection phenomenon odds minimum, the vertical light so as to effectively improve Mini-LED is led to
Amount.The LED chip brightness of relative usage traditional graph Sapphire Substrate improves about 10% or more, secondly by cvd nitride aluminium
Film, AlN films can significantly reduce the warpage in epitaxial growth, gallium nitride allow to be grown on laminated film, into one
Step reduces the defect concentration of gallium nitride, and the output power of LED chip can be improved 2% or more.
Description of the drawings
Attached drawing 1 is the schematic diagram of embodiment of the present invention MULTILAYER COMPOSITE graphical sapphire substrate；
1- sapphires (Al2O3) substrate；2- silica (SiO2) film；
3- zirconium oxides (ZrO2) film；4- titanium oxide (SiO2) film；
5- aluminium nitride (AlN) film
Embodiment
The embodiment of the present invention is illustrated below in conjunction with the accompanying drawings:
A kind of preparation method of novel multi-layer compound pattern Sapphire Substrate, includes the following steps：
A. sapphire substrate wafer 1 is passed through acetone and is scrubbed 6 minutes successively, 90 DEG C of dense H2SO4With H2O2Volume ratio is 5:2
Mixed solution clean 12 minutes, 80 DEG C of deionized waters are cleaned 8 minutes, and 25 DEG C of deionized waters are cleaned 7 minutes, 5 points of high speed drying
Clock；
B. sapphire substrate wafer is put on the workpiece plate of optical coating system vacuum chamber, loads onto silica coating materials, opened
Dry pump and lobe pump measure film thickness by optical thick film monitor, set film thickness as 0.5 μm, when vacuum degree reaches
8.0X10-4After Pa, opens electron gun general supply and filament switch, heater current are adjusted to 200mA.Electron-beam voltage reaches 500V,
Radio-frequency power reaches 300W, and bombardment membrane material surface is evaporated, and accelerating potential is set as 800V, and membrane material is made to be deposited on substrate
Chip simultaneously forms fine and close silicon oxide film 2；
C. by silica coating materials with being changed to zirconium oxide coating materials, film thickness is measured by optical thick film monitor, sets film
Thickness is 0.5 μm, when vacuum degree reaches 5.0X10-4After Pa, heater current is adjusted to 300mA.Electron-beam voltage reaches 600V, radio frequency
Power reaches 400W, and bombardment membrane material surface is evaporated, and accelerating potential is set as 900V, and membrane material is made to be deposited on substrate wafer
And form fine and close zirconia film 3；
D. by silica coating materials with being changed to titanium oxide coating materials, film thickness is measured by optical thick film monitor, sets film
Thickness is 0.3 μm, when vacuum degree reaches 7.0X10-4After Pa, heater current is adjusted to 400mA.Electron-beam voltage reaches 700V, radio frequency
Power reaches 500W, and bombardment membrane material surface is evaporated, and accelerating potential is set as 1000V, and membrane material is made to be deposited on substrate crystalline substance
Piece simultaneously forms fine and close thin film of titanium oxide 4, closes optical coating system, the chip after plated film is taken out from the device.
E. use glue spreader MULTILAYER COMPOSITE graphical sapphire substrate wafer surface be coated with a layer thickness be 2.4 μm just
It to ultraviolet photoresist, is exposed using certain size photolithography plate, time for exposure 300ms, the chip after exposure is carried out just
Normal development；
F. plasma dry etch is carried out to the chip after development, is divided into two steps, the first step, upper electrode power is
1500W, lower electrode power 700W, BCL3Flow is 70sccm, CHF3Flow is 10sccm, and etching etching temperature is 40 DEG C, helium
Atmospheric pressure is that 5mTorr etch periods are 800S.Second step, upper electrode power 1600W, lower electrode power 1000W, BCL3
Flow is 80sccm, CHF3Flow is 15sccm, and etching etching temperature is 35 DEG C, and helium pressure is that 3mTorr etch periods are
500S；
G. will etching back substrate chip carry out ultrasonic cleaning, 50 DEG C of still type SYNPERONIC PE/F68 with
Sodium citrate molar ratio is 1:3 mixed solution ultrasonic cleaning 15 minutes, ultrasonic frequency 60Hz, 25 DEG C of deionized water leaching
It washes 7 minutes, nitrogen purges 10 minutes, until being completely dried；
H. the substrate wafer after cleaning-drying is placed on the anode plate of sputter coating machine reative cell, prepares aluminium nitride film
5, round Al targets are installed on the indoor target platform of reaction, and it is 3cm to fix and adjust target-substrate distance, opens molecular pump and is evacuated to vacuum
5.0×10-4Substrate wafer is heated to 100 DEG C by Pa, is passed through argon working gas into reative cell, gas flow 50SCCM,
Reaction gas nitrogen, gas flow 30SCCM make to be maintained at 0.4Pa to stable gas pressure in reative cell, when the indoor gas of reaction
After body pressure is stablized, baffle is removed, starts formal sputtering, sputtering power 200W, sputtering time is 5 minutes, and thickness is
MULTILAYER COMPOSITE graphical sapphire substrate chip is prepared in 20nm；
The MULTILAYER COMPOSITE graphical sapphire substrate microcosmos pattern of preparation is triangular pyramidal, and bottom width is 2.75 μm, is highly
1.83 μm, as shown in Figure 1.
The above is a kind of specific implementation mode of the present invention, and figure pattern can be ball-type, square, concave etc. its
His any figure and one layer and multilayer other optical thin films are accordingly to be regarded as within protection scope of the present invention.
Claims (9)
1. a kind of preparation method of novel multi-layer compound pattern Sapphire Substrate, method is to be existed using optical coating technology
Certain thickness silica (SiO is sequentially depositing in a piece of bright and clean sapphire substrate wafer2) film, zirconium oxide (ZrO2) film
With titanium oxide (TiO2) film, the then ultraviolet positive photoresist of one layer of even spread on it, then carry out step printing and
Developing procedure；ICP dry etchings are carried out again, are cleaned after the completion of etching, and it is thin finally to deposit one layer of aluminium nitride (AlN) on it
Film obtains MULTILAYER COMPOSITE graphical sapphire substrate chip.
2. according to a kind of preparation method of novel multi-layer compound pattern Sapphire Substrate described in claim 1, it is characterised in that：
The sapphire substrate wafer is to pass through acetone successively to scrub 5-10 minutes, 90 DEG C of dense H2SO4With H2O2Volume ratio is 3:1
Or 5:2 mixed solution cleans 10-15 minutes, and 80 DEG C of deionized waters are cleaned 8-10 minutes, 25 DEG C of 5-10 points of deionized water cleanings
Clock, high speed drying 3-10 minutes.
3. according to a kind of preparation method of novel multi-layer compound pattern Sapphire Substrate described in claim 1, it is characterised in that：
The preparation method of silicon oxide film is to be put into sapphire substrate wafer on the workpiece plate of optical coating system vacuum chamber, loads onto oxidation
Silicon fiml material opens dry pump and lobe pump, and film thickness is measured by optical thick film monitor, sets film thickness as 0.1-1.0 μm,
When vacuum degree reaches 8.0X10-4After Pa, opens electron gun general supply and filament switch, heater current are adjusted to 100-800mA.Electronics
Beam voltage reaches 200-1000V, and radio-frequency power reaches 100-1000W, and bombardment membrane material surface is evaporated, accelerating potential setting
For 100-2000V, so that membrane material is deposited on substrate wafer and form fine and close silicon oxide film.
4. according to a kind of preparation method of novel multi-layer compound pattern Sapphire Substrate described in claim 1, it is characterised in that：
The preparation method of zirconia film is that silica coating materials is measured film with being changed to zirconium oxide coating materials by optical thick film monitor
Thickness sets film thickness as 0.1-1.5 μm, when vacuum degree reaches 8.0X10-4After Pa, heater current is adjusted to 200-1000mA.Electricity
Beamlet voltage reaches 100-1000V, and radio-frequency power reaches 100-1500W, and bombardment membrane material surface is evaporated, and accelerating potential is set
It is set to 200-1000V, membrane material is made to be deposited on substrate wafer and forms fine and close zirconia film.
5. according to a kind of preparation method of novel multi-layer compound pattern Sapphire Substrate described in claim 1, it is characterised in that：
The preparation method of thin film of titanium oxide is that zirconium oxide coating materials is measured film with being changed to titanium oxide coating materials by optical thick film monitor
Thickness sets film thickness as 0.1-2.0 μm, when vacuum degree reaches 8.0X10-4After Pa, heater current is adjusted to 100-1500mA.Electricity
Beamlet voltage reaches 100-1000V, and radio-frequency power reaches 100-2000W, and bombardment membrane material surface is evaporated, and accelerating potential is set
It is set to 100-1000V, membrane material is made to be deposited on substrate wafer and forms fine and close thin film of titanium oxide.
6. according to a kind of preparation method of novel multi-layer compound pattern Sapphire Substrate described in claim 1, it is characterised in that：
The gluing is to be coated with a layer thickness in MULTILAYER COMPOSITE graphical sapphire substrate wafer surface as 1.0-2.4 using glue spreader
μm positive ultraviolet photoresist, be exposed using certain size photolithography plate, time for exposure 100-360ms, after exposure
Chip is normally developed.
7. according to a kind of preparation method of novel multi-layer compound pattern Sapphire Substrate described in claim 1, it is characterised in that：
The ICP dry etchings are to carry out plasma dry etch to the chip after development, are divided into two steps, the first step, on
Electrode power is 100-2000W, lower electrode power 100-1500W, BCL3Flow is 10-120sccm, CHF3Flow is 10-
100sccm, etching etching temperature is 20-45 DEG C, and helium pressure is that 1-10mTorr etch periods are 300-1000S.Second step,
Upper electrode power is 200-2000W, lower electrode power 200-1800W, BCL3Flow is 10-100sccm, CHF3Flow is 10-
100sccm, etching etching temperature is 20-40 DEG C, and helium pressure is that 1-10mTorr etch periods are 300-1500S.
8. according to a kind of preparation method of novel multi-layer compound pattern Sapphire Substrate described in claim 1, it is characterised in that：
Cleaning step after the etching, 40-70 DEG C of still type SYNPERONIC PE/F68 are with sodium citrate molar ratio
1:3 or 1:4 mixed solution ultrasonic cleaning 10-15 minutes, ultrasonic frequency 50-90Hz, 25 DEG C of deionized waters elute 5-8
Minute, nitrogen purges 5-10 minutes, until being completely dried.
9. according to a kind of preparation method of novel multi-layer compound pattern Sapphire Substrate described in claim 1, it is characterised in that：
The aluminum nitride thin membrane preparation method is that the substrate wafer after cleaning is placed on the anode plate of sputter coating machine reative cell, circle
Shape Al targets are installed on the indoor target platform of reaction, and it is 2-5cm to fix and adjust target-substrate distance, opens molecular pump and vacuum is evacuated to 5.0
×10-4Substrate wafer is heated to 50-100 DEG C by Pa, and argon working gas, gas flow 10- are passed through into reative cell
150SCCM, reaction gas nitrogen, gas flow 10-300SCCM make to be maintained at 0.4- to stable gas pressure in reative cell
0.8Pa removes baffle after reacting indoor gas pressure intensity and stablizing, and starts formal sputtering, sputtering power 100-2000W,
Sputtering time is 5-30 minutes, thickness 10-60nm, and MULTILAYER COMPOSITE graphical sapphire substrate chip is prepared.
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| CN201810637647.3A CN108807147A (en) | 2018-06-20 | 2018-06-20 | A kind of preparation method of novel multi-layer compound pattern Sapphire Substrate |
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| CN201810637647.3A CN108807147A (en) | 2018-06-20 | 2018-06-20 | A kind of preparation method of novel multi-layer compound pattern Sapphire Substrate |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109841709A (en) * | 2018-12-27 | 2019-06-04 | 江苏澳洋顺昌集成电路股份有限公司 | A kind of preparation method of graphical compound substrate |
| CN110444642A (en) * | 2019-08-13 | 2019-11-12 | 黄山博蓝特半导体科技有限公司 | A kind of preparation method of the graphical compound substrate of high brightness |
| CN112185818A (en) * | 2020-10-09 | 2021-01-05 | 南京信息工程大学 | Dry etching method of ZnO film |
| CN115020565A (en) * | 2022-06-06 | 2022-09-06 | 淮安澳洋顺昌光电技术有限公司 | Preparation method of composite patterned substrate and epitaxial structure with air gap |
| CN115287767A (en) * | 2022-08-29 | 2022-11-04 | 松山湖材料实验室 | Annealing device, aluminum nitride product and preparation method thereof, and photoelectric device |
-
2018
- 2018-06-20 CN CN201810637647.3A patent/CN108807147A/en not_active Withdrawn
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109841709A (en) * | 2018-12-27 | 2019-06-04 | 江苏澳洋顺昌集成电路股份有限公司 | A kind of preparation method of graphical compound substrate |
| CN110444642A (en) * | 2019-08-13 | 2019-11-12 | 黄山博蓝特半导体科技有限公司 | A kind of preparation method of the graphical compound substrate of high brightness |
| CN112185818A (en) * | 2020-10-09 | 2021-01-05 | 南京信息工程大学 | Dry etching method of ZnO film |
| CN115020565A (en) * | 2022-06-06 | 2022-09-06 | 淮安澳洋顺昌光电技术有限公司 | Preparation method of composite patterned substrate and epitaxial structure with air gap |
| CN115020565B (en) * | 2022-06-06 | 2023-10-20 | 淮安澳洋顺昌光电技术有限公司 | Preparation method of composite patterned substrate and epitaxial structure with air gap |
| CN115287767A (en) * | 2022-08-29 | 2022-11-04 | 松山湖材料实验室 | Annealing device, aluminum nitride product and preparation method thereof, and photoelectric device |
| CN115287767B (en) * | 2022-08-29 | 2023-04-25 | 松山湖材料实验室 | Annealing device, aluminum nitride product, preparation method of aluminum nitride product and photoelectric device |
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Application publication date: 20181113 |