CN109841691A - A kind of Electrochromic Molybdenum Oxide Coatings preparation method and using Electrochromic Molybdenum Oxide Coatings as the silicon heterojunction solar battery of hole transmission layer - Google Patents
A kind of Electrochromic Molybdenum Oxide Coatings preparation method and using Electrochromic Molybdenum Oxide Coatings as the silicon heterojunction solar battery of hole transmission layer Download PDFInfo
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Abstract
A kind of silicon/crystalline silicon heterojunction solar cell of the Electrochromic Molybdenum Oxide Coatings prepared the present invention relates to Electrochromic Molybdenum Oxide Coatings preparation method and in this way as hole transmission layer, belongs to semiconductor film film preparation and photovoltaic technology field.The advantages that Electrochromic Molybdenum Oxide Coatings preparation method described in this patent is vacuum heated filament oxidation distillation sedimentation, and it is simple which there are raw material to choose, and consumption is few, is not necessarily to silicon, and technological parameter controllability is high, and film is with high purity；The Electrochromic Molybdenum Oxide Coatings material of this patent the method preparation includes material and is evenly distributed, and surface is smooth, the higher feature of light permeable rate.With the incident photon-to-electron conversion efficiency > 20% provided by the invention for aoxidizing novel silicon heterojunction solar battery of the Electrochromic Molybdenum Oxide Coatings of distillation sedimentation preparation as hole selection layer using vacuum heated filament.
Description
Technical field
The Electrochromic Molybdenum Oxide Coatings prepared the present invention relates to a kind of preparation method of Electrochromic Molybdenum Oxide Coatings and in this way are as hole
The silicon heterojunction solar battery of transport layer belongs to semiconductor film material preparation and photovoltaic application technical field.
Background technique
The novel asymmetric silicon heterojunction solar battery since the advent of the world of non-impurity-doped, the very big concern by photovoltaic circle.Its benefit
Transition metal oxide or metal halide is used to select transport layer as carrier, instead of N-type or p-type heavily doped silicon film
Layer, can effectively avoid that phosphine and borine etc. be inflammable and explosive, use of toxic and harmful gas.Wherein, molybdenum oxide because its have compared with
Big work function is widely used in the asymmetric silicon heterojunction solar battery of novel non-impurity-doped as hole selection transport layer
In research.Currently, the preparation method of molybdenum oxide hole selection transport layer mainly has: thermal evaporation, electron-beam excitation, solwution method etc.；
However, all there is certain technical limitation in these preparation methods.Such as: the raw material that thermal evaporation uses are high-pure molybdenum oxide powder
End easily causes the splashing of raw material, not only wastes raw material in membrane-film preparation process, is also easy to be detained in cavity a large amount of
Residual powder, and the film prepared is often not fine and close enough and uniformly；Electron beam evaporation technique also has similar with thermal evaporation
Limitation；Oxidation molybdenum material is synthesized using solwution method, preparation process is more difficult to control, and material property is vulnerable to environmental factor shadow
It rings, the thickness and uniformity especially to form a film on the substrate for have light trapping structure is difficult to control.Problem above makes these preparations
Method is all unfavorable for the extensive industrialization of the large area production and novel heterojunction battery of Electrochromic Molybdenum Oxide Coatings.
Summary of the invention
The present invention proposes a kind of preparation method of Electrochromic Molybdenum Oxide Coatings that distillation deposition is aoxidized based on heated filament, it is therefore an objective to avoid steaming
The waste of hair process chinese raw materials realizes the efficient control of each parameter in material preparation process, obtains quality more preferably molybdenum oxide
Film is advantageously implemented large-scale production.The invention also provides a kind of Electrochromic Molybdenum Oxide Coatings works that distillation deposition is aoxidized with heated filament
For the preparation method of the silicon heterojunction solar battery of hole transmission layer, there is efficient, low cost potential.
Vacuum heated filament oxidation distillation sedimentation (schematic diagram is shown in attached drawing 1) proposed by the present invention, preparation principle are as follows: in Gao Zhen
In Altitude, electric current is passed through to high-purity molybdenum filament, increases its temperature, and oxidation reaction occurs with the oxygen being subsequently passed, in heat
Silk Surface Creation molybdenum oxide simultaneously distils, and obtains the Electrochromic Molybdenum Oxide Coatings of high quality on substrate.It is aoxidized and is risen using vacuum heated filament
Magnificent sedimentation prepares Electrochromic Molybdenum Oxide Coatings and includes the following steps:
(1) to will the substrate (including the common substrate such as silicon wafer, glass, ceramics) of deposited oxide molybdenum film clean.
The RCA standard cleaning of semiconductor technology routine can be used in silicon chip substrate, and silicon wafer can be polished silicon slice or with light trapping structure
Silicon wafer.
(2) being placed in the substrate cleaned up that step (1) obtains (can in vacuum heated filament oxidation distillation depositing device cavity
Using reacting heat evaporation equipment), sample is blocked with baffle, by the both ends of high-purity molybdenum filament (0.5~2mm of diameter, purity 99.99%)
It fixes on the electrode.
(3) cavity is vacuumized, reaches < 4 × 10 in vacuum degree-4After Pa, high purity oxygen gas, oxygen are slowly introducing into cavity
Throughput is between 1-50sccm, air pressure (P1) between 0.1-10Pa, it is slowly increased heater current value, reaches molybdenum filament temperature
500-1300 DEG C, so that air pressure (P at this time2) than (P1) low about 0.01-5Pa.
(4) after each parameter stability such as hot-wire temperature, air pressure, sample baffle is opened, film deposition starts, when passing through control
Between control film thickness, after to be deposited, baffle is made to block sample, closes oxygen, heater current is adjusted to zero, molybdenum oxide
Film deposition finishes.
Electrochromic Molybdenum Oxide Coatings prepared by the present invention can be used as the hole transmission layer of silicon/crystalline silicon heterojunction solar cell, silicon heterogenous electricity
The specific structure in pond, from top to bottom successively are as follows: cathode, anti-reflection layer, emitter, front passivation layer, n type single crystal silicon substrate, back table
Face passivation layer, hole selection layer (Electrochromic Molybdenum Oxide Coatings) and anode, structural schematic diagram are shown in attached drawing 2.Using Electrochromic Molybdenum Oxide Coatings as hole
The preparation of the silicon heterojunction solar battery of transport layer the following steps are included:
(1) wet etching method is used, obtains random pyramid Surface Texture in N-type<100>CZ silicon chip surface, and by each
Corrode to the same sex, slows down pyramid tip.After RCA cleaning, silicon wafer is impregnated into 1min in 2% hydrofluoric acid, to remove table
Face oxide layer.
(2) silicon wafer got ready in step (1) is placed in plasma enhanced chemical vapor deposition (PECVD) cavity,
The light-receiving surface and shady face of the silicon wafer prepare the intrinsic amorphous silicon passivation layer of about 7nm and 10nm respectively.
(3) face that selecting step (2) prepares sample equally uses PECVD technique, prepares on it as light-receiving surface
The N-type heavily doped amorphous silicon electron transfer layer of about 12nm.
(4) on the N-type heavily doped amorphous silicon electron transfer layer of step (3) preparation, about using magnetron sputtering technique preparation
Tin indium oxide (ITO) transparent conductive film of 80nm, and silver grating line electrode is prepared using thermal evaporation techniques on it.
(5) hydrofluoric acid solution for being 2% using concentration, to the intrinsic amorphous silicon film table of the sample shady face of (4) preparation
Face carries out oxide layer processing, and is immediately placed in vacuum heated filament oxidation distillation depositing device cavity, blocks sample with baffle, will
The both ends of high-purity molybdenum filament (0.5~2mm of diameter, purity 99.99%) are fixed on the electrode.
(6) cavity is vacuumized, reaches < 4 × 10 in vacuum degree-4After Pa, it is slowly introducing high purity oxygen gas into cavity, makes
It obtains oxygen flow and is slowly increased heater current value in 1-50sccm, oxygen pneumatic 0.1-10Pa, molybdenum filament temperature is made to reach 500-
1300 DEG C, so that the oxygen pneumatic of cavity declines 0.01-5Pa at this time.
(7) after each parameter stability such as hot-wire temperature, air pressure, sample baffle is opened, film deposition starts, timing 0.5-
50min closes baffle, blocks sample, closes oxygen, heater current is adjusted to zero, Electrochromic Molybdenum Oxide Coatings deposition finishes.
(8) silver electrode is prepared using thermal evaporation techniques in Electrochromic Molybdenum Oxide Coatings surface prepared by step (5)-(7).
The preparation method of Electrochromic Molybdenum Oxide Coatings and silicon heterojunction solar battery proposed by the present invention has the advantage that
(1) Preparation equipment of Electrochromic Molybdenum Oxide Coatings used in the method for the present invention is common thermal evaporation apparatus, is wanted to equipment
Ask lower；
(2) raw material that Electrochromic Molybdenum Oxide Coatings are prepared used in the method for the present invention are high-purity molybdenum filament, simple and easy to get, use the longevity
Life is longer, and film preparation cost can be greatly reduced；
(3) the method for the present invention prepare Electrochromic Molybdenum Oxide Coatings deposition parameter it is less, major parameter is oxygen pneumatic and heated filament temperature
Degree is, it can be achieved that effectively control；
(4) to have a surface using Electrochromic Molybdenum Oxide Coatings material prepared by the method for the present invention smooth, and light permeable rate is high, can knit
Uniform deposition on structure substrate, and the characteristics of silicon chip substrate minority carrier life time can be effectively improved.
(5) silicon heterojunction solar battery that transport layer is selected using Electrochromic Molybdenum Oxide Coatings as hole of the method for the present invention preparation,
Preparation process is fairly simple, and transfer efficiency > 20% may be implemented, and has efficient, low cost potential.
Detailed description of the invention
Fig. 1 is vacuum heated filament oxidation distillation sedimentation apparatus structure schematic diagram of the present invention；
Fig. 2 is the silicon heterojunction solar battery structural schematic diagram that transport layer is selected using Electrochromic Molybdenum Oxide Coatings as hole；
Fig. 3 is the transmittance curve of the Electrochromic Molybdenum Oxide Coatings prepared when oxygen pneumatic is 0.2Pa in embodiment one；
Fig. 4 is the SEM top view of the Electrochromic Molybdenum Oxide Coatings prepared on polished silicon slice in embodiment two；
Fig. 5 is the SEM sectional view of the Electrochromic Molybdenum Oxide Coatings prepared on polished silicon slice in embodiment two；
Fig. 6 and Fig. 7 is the SEM sectional view of the Electrochromic Molybdenum Oxide Coatings prepared on texture silicon wafer in embodiment three；
Fig. 8 is silicon heterojunction solar battery (the molybdenum oxide thickness for selecting transport layer in example IV using molybdenum oxide as hole
It spends for the light I-V curve of 14nm)；
In Fig. 1,1 is reaction gas inlet, and 2 be vacuum cavity, and 3 be sample stage, and 4 be substrate, and 5 be oxygen molecule, and 6 be high
Pure molybdenum filament, 7 be molybdenum oxide molecule, and 8 be reaction gas outlet.
In Fig. 2,1 is Ag grid line, and 2 be ITO, and 3 be N-type amorphous silicon membrane, and 4 be intrinsic amorphous silicon film, and 5 be N-type crystal silicon
Silicon wafer, 6 be intrinsic amorphous silicon film, and 7 be Electrochromic Molybdenum Oxide Coatings, and 8 be silver-colored back electrode.
Specific implementation method
The invention proposes Electrochromic Molybdenum Oxide Coatings material and its preparation sides that a kind of vacuum heated filament aoxidizes distillation sedimentation preparation
Method, the specific steps are as follows:
(1) conventional cleaning is carried out to substrate (can be the common substrate such as silicon wafer, glass, potsherd) used, if
Substrate is silicon wafer, using the RCA standard cleaning of semiconductor routine.
(2) being placed in the substrate cleaned up that step (1) obtains (can in vacuum heated filament oxidation distillation depositing device cavity
Using reacting heat evaporation equipment), sample is blocked with baffle, by the both ends of high-purity molybdenum filament (0.5~2mm of diameter, purity 99.99%)
It fixes on the electrode.
(3) cavity is vacuumized, reaches < 4 × 10 in vacuum degree-4After Pa, it is slowly introducing high purity oxygen gas into cavity, makes
Oxygen flow is obtained between 1-50sccm, air pressure (P1) between 0.1-10Pa, it is slowly increased heater current value, makes molybdenum filament temperature
Reach 500-1300 DEG C, so that the air pressure (P of cavity at this time2) compare P1Low about 0.01-5Pa.
(4) after each parameter stability such as hot-wire temperature, air pressure, sample baffle is opened, film deposition starts, controls according to the time
Made membrane thickness, end to be deposited, baffle block sample, close oxygen, heater current are adjusted to zero, Electrochromic Molybdenum Oxide Coatings have deposited
Finish.
(5) after the cooling 45-60min of cavity, the Electrochromic Molybdenum Oxide Coatings sample deposited is taken out.
Electrochromic Molybdenum Oxide Coatings proposed by the present invention using using the oxidation distillation sedimentation preparation of vacuum heated filament are as hole transport
The specific structure of the silicon heterojunction solar battery of layer, from top to bottom successively are as follows: cathode, anti-reflection layer, emitter, front passivation layer, N
Type monocrystalline substrate, back surface passivation layer, hole selection layer (Electrochromic Molybdenum Oxide Coatings) and anode, structural schematic diagram are shown in attached drawing 2.Specifically
Preparation step it is as follows:
(1) wet etching method is used, obtains random pyramid Surface Texture in N-type<100>CZ silicon chip surface, and by each
Corrode to the same sex, slows down pyramid tip.After RCA cleaning, silicon wafer is impregnated into 1min in 2% hydrofluoric acid, to remove table
Face oxide layer.
(2) silicon wafer got ready in step (1) is placed in PECVD cavity, is made respectively in the silicon wafer light-receiving surface and shady face
The standby intrinsic amorphous silicon passivation layer with a thickness of 7nm and 10nm.
(3) face of the sample of selecting step (2) preparation is equally made using PECVD technique on it as light-receiving surface
The N-type heavily doped amorphous silicon electron transfer layer of standby 12nm.
(4) it on the N-type heavily doped amorphous silicon electron transfer layer of step (3) preparation, is prepared using magnetron sputtering technique
Tin indium oxide (ITO) transparent conductive film of 80nm, and silver grating line electrode is prepared using thermal evaporation techniques on it.
(5) hydrofluoric acid solution for being 2% using concentration, to the amorphous silicon surfaces of the shady face of the sample of step (4) preparation
Oxide layer processing is carried out, and is immediately placed in vacuum heated filament oxidation distillation depositing device cavity, blocks sample with baffle, it will be high
The both ends of pure molybdenum filament (0.5~2mm of diameter, purity 99.99%) are fixed on the electrode.
(6) cavity is vacuumized, reaches < 4 × 10 in vacuum degree-4After Pa, it is slowly introducing high purity oxygen gas into cavity, makes
It obtains oxygen flow and is slowly increased heater current value in 1-50sccm, oxygen pneumatic 0.1-10Pa, molybdenum filament temperature is made to reach 500-
1300 DEG C, so that the oxygen pneumatic of cavity declines 0.01-5Pa at this time.
(7) after each parameter stability such as hot-wire temperature, air pressure, sample baffle is opened, film deposition starts, timing 0.1-
50min closes baffle immediately, blocks sample, closes oxygen, heater current is adjusted to zero, Electrochromic Molybdenum Oxide Coatings deposition finishes.
(8) silver electrode is prepared using thermal evaporation techniques in the molybdenum oxide surface of step (7) preparation.
Specific embodiment is exemplified below to be illustrated to this patent: following embodiment does not have to for illustrating this patent
To limit the range of this patent.Without departing substantially from this patent spirit and essence, to this patent method, step or condition institute
The modifications or substitutions of work belong to the protection scope of this patent.Unless otherwise specified, technological means used in embodiment is this
Conventional means known to the technical staff of field.
Embodiment one
The preparation method of the Electrochromic Molybdenum Oxide Coatings according to this patent selects sheet glass as substrate, prepares oxidation on it
Molybdenum film.
(1) to will the glass substrate of deposited oxide molybdenum film clean.Specific technique is referring to conventional glass
Vessel cleaning method successively uses detergent, and concentrated sulfuric acid solution, acetone and ethyl alcohol cleans substrate, and cleaning mistake
Glass substrate is rinsed with deionized water repeatedly in journey, by cleaned glass substrate, purges drying with nitrogen.
(2) glass substrate cleaned up that step (1) obtains is placed in vacuum heated filament oxidation distillation depositing device cavity
In (reacting heat evaporation equipment can be used), sample is blocked with baffle, by the both ends of high-purity molybdenum filament (diameter 1mm, purity 99.99%)
It fixes on the electrode.
(3) cavity is vacuumized, reaches < 4 × 10 in vacuum degree-4After Pa, it is slowly introducing high purity oxygen gas into cavity, makes
Obtaining oxygen flow is 4sccm, air pressure (P1) it is 0.2Pa, it is slowly increased heater current value, molybdenum filament temperature is made to reach 1095 ± 5 DEG C,
So that the air pressure P of cavity at this time2For 0.15Pa.
(4) after each parameter stability such as hot-wire temperature, air pressure, sample baffle is opened, film deposition starts, timing
2.5min closes baffle and blocks sample, closes oxygen, heater current is adjusted to zero, Electrochromic Molybdenum Oxide Coatings deposition finishes.
(5) 45min is waited, the Electrochromic Molybdenum Oxide Coatings prepared are taken out.Measure the thickness of the Electrochromic Molybdenum Oxide Coatings of embodiment preparation
Degree is about 15nm, and transmission spectrum is as shown in Fig. 3.
Embodiment two
The preparation method of the Electrochromic Molybdenum Oxide Coatings according to this patent selects polished silicon slice as substrate, prepares oxygen on it
Change molybdenum film.
(1) to will the polished silicon slice substrate of deposited oxide molybdenum film clean.Semiconductor work can be used in silicon chip substrate
The RCA standard cleaning method of skill routine is cleaned, and nitrogen purges drying.
(2) the polished silicon slice substrate after RCA standard cleaning is immersed in concentration is 2% (volume ratio: hydrofluoric acid/deionization
Water=2/100) hydrofluoric acid solution in handle 1min, remove the oxide layer on polished silicon slice substrate.
(3) the polished silicon slice substrate for the removal surface oxide layer that step (2) obtains the oxidation distillation of vacuum heated filament is placed in sink
In product equipment cavity, sample is blocked with baffle, the both ends of high-purity molybdenum filament (diameter 1mm, purity 99.99%) are fixed on electrode
On.
(4) cavity is vacuumized, reaches < 4 × 10 in vacuum degree-4After Pa, it is slowly introducing high purity oxygen gas into cavity, makes
Obtaining oxygen flow is 4sccm, air pressure P1For 0.2Pa, it is slowly increased heater current value, so that molybdenum filament temperature is reached 1095 ± 5 DEG C, makes
Obtain the oxygen P of cavity at this time2For 0.15Pa.
(5) after each parameter stability such as hot-wire temperature, air pressure, sample baffle is opened, film deposition starts, timing 15min,
Baffle is closed immediately, blocks sample, closes oxygen, heater current is adjusted to zero, Electrochromic Molybdenum Oxide Coatings deposition finishes.
(6) 45min is waited, the Electrochromic Molybdenum Oxide Coatings prepared are taken out.Measure the thickness of the Electrochromic Molybdenum Oxide Coatings of embodiment preparation
Degree is about 97nm, SEM image such as attached drawing 4, shown in 5.
Embodiment three
The preparation method of the Electrochromic Molybdenum Oxide Coatings according to this patent is selected texture silicon wafer as substrate, is prepared on it
Electrochromic Molybdenum Oxide Coatings.
(1) wet anisotropic corrosion is carried out to silicon wafer, obtains random pyramidal light trapping structure in silicon chip surface, then right
Silicon wafer carries out RCA cleaning.
(2) by the texture silicon wafer with pyramid structure be immersed in concentration be 2% (volume ratio: hydrofluoric acid/deionized water=
2/100) 1min is handled in hydrofluoric acid solution, removes the native oxide layer of silicon chip surface.
(3) the texture silicon chip substrate for the removal surface oxide layer that step (2) obtains the oxidation distillation of vacuum heated filament is placed in sink
In product equipment cavity, sample is blocked with baffle, the both ends of high-purity molybdenum filament (diameter 1mm, purity 99.99%) are fixed on electrode
On.
(4) cavity is vacuumized, reaches < 4 × 10 in vacuum degree-4After Pa, it is slowly introducing high purity oxygen gas into cavity, makes
Obtaining oxygen flow is 4sccm, air pressure P1For 0.2Pa, it is slowly increased heater current value, so that molybdenum filament temperature is reached 1090 ± 5 DEG C, makes
Obtain the air pressure P of cavity at this time2For 0.15Pa.
(5) after each parameter stability such as hot-wire temperature, air pressure, sample baffle is opened, film deposition starts, timing 12min,
Baffle is closed immediately, blocks sample, closes oxygen, heater current is adjusted to zero, Electrochromic Molybdenum Oxide Coatings deposition finishes.
(6) 45min is waited, the Electrochromic Molybdenum Oxide Coatings prepared are taken out.Measure the thickness of the Electrochromic Molybdenum Oxide Coatings of embodiment preparation
Degree is about 77nm, SEM image such as attached drawing 6, shown in 7.
Example IV
Electrochromic Molybdenum Oxide Coatings prepared by the present invention can be used as hole selection transport layer for novel silicon heterojunction solar battery.One
The preparation of a silicon heterojunction solar battery comprising molybdenum oxide hole selection transport layer, steps are as follows:
(1) wet etching method is used, obtains random pyramid Surface Texture in N-type<100>CZ silicon chip surface, and by each
Corrode to the same sex, slows down pyramid tip.After RCA cleaning, silicon wafer is impregnated into 1min in 2% hydrofluoric acid, to remove table
Face oxide layer.
(2) silicon wafer got ready in step (1) is placed in PECVD cavity, is made respectively in the silicon wafer light-receiving surface and shady face
The intrinsic amorphous silicon passivation layer of standby 7nm and 10nm.
(3) face that selecting step (2) prepares sample is equally prepared using PECVD technique on it as light-receiving surface
The heavily doped amorphous silicon electron transfer layer of 12nm.
(4) on the heavily doped amorphous silicon electron transfer layer of step (3) preparation, prepare 80nm's using magnetron sputtering technique
Tin indium oxide (ITO) transparent conductive film, and silver grating line electrode is prepared using thermal evaporation techniques on it.
(5) hydrofluoric acid solution for being 2% using concentration, the amorphous silicon membrane table of the shady face of sample is prepared to step (4)
Face carries out oxide layer processing, and is immediately placed in vacuum heated filament oxidation distillation depositing device cavity, blocks sample with baffle, will
The both ends of high-purity molybdenum filament (diameter 1mm, purity 99.99%) are fixed on the electrode.
(6) cavity is vacuumized, reaches < 4 × 10 in vacuum degree-4After Pa, it is slowly introducing high purity oxygen gas into cavity, makes
Obtaining oxygen flow is 4sccm, air pressure P1For 0.2Pa, it is slowly increased heater current value, so that molybdenum filament temperature is reached 1095 ± 5 DEG C, makes
Obtain the air pressure P of cavity at this time2For 0.15Pa.
(7) after each parameter stability such as hot-wire temperature, air pressure, sample baffle is opened, film deposition starts, timing
2.5min closes baffle immediately, blocks sample, closes oxygen, heater current is adjusted to zero, Electrochromic Molybdenum Oxide Coatings deposition finishes.
(8) silver electrode is prepared using thermal evaporation techniques in the Electrochromic Molybdenum Oxide Coatings surface of step (7) preparation, completes the system of battery
It is standby.The light I-V curve for the novel heterojunction crystal silicon solar battery that the present embodiment obtains is shown in attached drawing 8, wherein open-circuit voltage (Voc) be
701.6mV, short circuit current (Jsc) it is 37.45mA/cm2, fill factor (FF) is 78.31%, transfer efficiency (Eff) be
20.05%.
Claims (2)
1. the present invention provides a kind of Electrochromic Molybdenum Oxide Coatings and preparation method thereof, which is characterized in that the preparation side of the Electrochromic Molybdenum Oxide Coatings
Method includes the following steps:
Cleaned substrate is placed in vacuum heated filament oxidation distillation deposition chamber, blocks sample with baffle, high-purity molybdenum filament is (straight
0.5~2mm of diameter, purity 99.99%) both ends it is fixed on the electrode；
Cavity is vacuumized, so that vacuum degree is < 4 × 10-4Pa；
It is passed through the oxygen of required flow 1-50sccm into vacuum cavity, and makes cavity air pressure between 0.1-10Pa；
Molybdenum filament power supply is opened, by adjusting molybdenum filament electric current, controls hot-wire temperature (temperature range is between 500-1300 DEG C), makes oxygen
Gas reacts with molybdenum filament, generates molybdenum oxide；
After each parameter stability such as molybdenum filament temperature and air pressure, sample baffle is opened, film thickness is controlled according to the time, is reached to film
To required thickness, baffle is closed, film deposition terminates；
Oxygen is closed, reduces heater current until zero.After sample is cooling, sample is taken out, required Electrochromic Molybdenum Oxide Coatings are obtained.
2. the present invention provides a kind of novel silicon using Electrochromic Molybdenum Oxide Coatings prepared by 1 the method for claim as hole transmission layer
Heterojunction solar battery.The solar battery structure is successively from top to bottom: light-receiving surface electrode silver grating line, indium tin oxide films, N-type
Amorphous silicon emitter, front intrinsic amorphous silicon passivation layer, n type single crystal silicon substrate, back surface intrinsic amorphous silicon passivation layer, molybdenum oxide
Hole selects transport layer and shady face silver electrode.
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| CN110318035A (en) * | 2019-07-01 | 2019-10-11 | 暨南大学 | The more hot filament deposit method and devices of the discrete of alloy cpd film |
| CN113193062A (en) * | 2021-04-13 | 2021-07-30 | Tcl华星光电技术有限公司 | Photoelectric sensor, manufacturing method thereof and display panel |
| CN113511680A (en) * | 2021-08-10 | 2021-10-19 | 郑州大学 | Preparation method of high-purity molybdenum trioxide |
| CN114464694A (en) * | 2022-01-10 | 2022-05-10 | 华南师范大学 | Photoelectric detector and preparation method thereof |
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| CN102842634A (en) * | 2012-08-16 | 2012-12-26 | 常州天合光能有限公司 | Back emitting electrode heterojunction solar cell and preparation method |
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| CN110318035A (en) * | 2019-07-01 | 2019-10-11 | 暨南大学 | The more hot filament deposit method and devices of the discrete of alloy cpd film |
| CN113193062A (en) * | 2021-04-13 | 2021-07-30 | Tcl华星光电技术有限公司 | Photoelectric sensor, manufacturing method thereof and display panel |
| CN113511680A (en) * | 2021-08-10 | 2021-10-19 | 郑州大学 | Preparation method of high-purity molybdenum trioxide |
| CN113511680B (en) * | 2021-08-10 | 2022-11-25 | 郑州大学 | Preparation method of high-purity molybdenum trioxide |
| CN114464694A (en) * | 2022-01-10 | 2022-05-10 | 华南师范大学 | Photoelectric detector and preparation method thereof |
| CN114464694B (en) * | 2022-01-10 | 2024-05-28 | 华南师范大学 | Photoelectric detector and preparation method thereof |
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