CN116938214A

CN116938214A - Radio frequency switch unit, radio frequency switch circuit, integrated circuit chip and electronic device

Info

Publication number: CN116938214A
Application number: CN202210340024.6A
Authority: CN
Inventors: 刘石生
Original assignee: Shenzhen Jingzhun Communication Technology Co ltd
Current assignee: Shenzhen Jingzhun Communication Technology Co ltd
Priority date: 2022-04-01
Filing date: 2022-04-01
Publication date: 2023-10-24

Abstract

The application relates to a radio frequency switch unit, a radio frequency switch circuit, an integrated circuit chip and an electronic device. The radio frequency switch unit comprises a first inductor pair, a first switch module, a second switch module and a first absorption circuit, wherein the first inductor pair comprises a first inductor and a second inductor, a first end of the first inductor is connected with a first node, a second end of the first inductor is connected with a second end of the second inductor, and a first end of the second inductor is connected with a second node; the first end of the first switch module is connected with the second end of the first inductor and the second end of the second inductor, and the second end of the first switch module is grounded; the first end of the second switch module is connected with the second node, the second end of the second switch module is connected with the first end of the first absorption circuit, and the second end of the first absorption circuit is grounded; and the first absorption circuit comprises a first resistor and a first capacitor which are connected in parallel. By the embodiment of the application, the chip area occupied by the radio frequency switch unit is smaller, and the chip cost is reduced.

Description

Radio frequency switch unit, radio frequency switch circuit, integrated circuit chip and electronic device

Technical Field

The present application relates to the field of electronic circuits, and in particular, to a radio frequency switch unit, a radio frequency switch circuit, an integrated circuit chip, and an electronic device.

Background

The radio frequency switch is used for controlling the on-off or path selection of a radio frequency signal, is a common device in a radio frequency path, and has wide application in a plurality of fields such as a radio frequency system, an electronic measuring instrument and the like. With the expansion of the application occasions of the radio frequency system and the increase of the use amount of the switch, the radio frequency switch is developed towards the directions of high integration level, small size and low cost.

The existing radio frequency switch or radio frequency switch chip is mostly formed by elements such as a switch type transistor, a concentrated parameter element inductance, a concentrated parameter element capacitance, a resistor, a microstrip line and the like. In the element, inductance, microstrip line, capacitance and the like can generate electromagnetic radiation and other induced magnetic fields or electric fields and the like due to signal excitation, and the physical fields can influence the arrangement and normal operation of other elements. In the design or manufacture of a radio frequency switch or a radio frequency switch chip, in order to solve the problem of electromagnetic compatibility between elements, the existing method is to keep a larger arrangement space between elements to realize electromagnetic compatibility, which results in a larger size of the radio frequency switch or the radio frequency switch chip, which is inconvenient for high-density integration and inconvenient for cost reduction. In addition, electromagnetic radiation, induced magnetic fields or electric fields can cause energy loss, sacrificing the performance of the rf switch or rf switch chip. In order to realize popularization of high-frequency wireless communication technology, reducing the cost of components and improving the performance of the components are urgent problems to be solved.

Disclosure of Invention

The embodiment of the application provides a radio frequency switch unit, a radio frequency switch circuit, an integrated circuit chip and an electronic device, so as to provide a radio frequency switch with smaller size.

According to an aspect of the present application, there is provided a radio frequency switching unit comprising a radio frequency switching unit characterized by comprising a first inductor pair, a first switching module, a second switching module and a first snubber circuit, wherein:

the first inductor pair comprises a first inductor and a second inductor, a first end of the first inductor is connected with a first node of the radio frequency switch unit, a second end of the first inductor is connected with a second end of the second inductor, the first end of the second inductor is connected with a second node of the radio frequency switch unit, and the first inductor and the second inductor are arranged adjacently and generate induction magnetic fields with opposite directions;

the first switch module is used for being turned on or off under the control of a control signal, a first end of the first switch module is connected with a second end of the first inductor and a second end of the second inductor, and a second end of the first switch module is grounded;

the second switch module is used for being turned on or off together with the first switch module under the control of the control signal, the first end of the second switch module is connected with the second node of the radio frequency switch unit, the second end of the second switch module is connected with the first end of the first absorption circuit, and the second end of the first absorption circuit is grounded; and

The first absorption circuit comprises a first resistor and a first capacitor which are connected in parallel, wherein the first end of the first resistor and the first end of the first capacitor are connected together to serve as the first end of the first absorption circuit, and the second end of the first resistor and the second end of the first capacitor are connected together to serve as the second end of the first absorption circuit.

According to another aspect of the present application, there is provided a radio frequency switching circuit comprising a plurality of radio frequency switching units as described above, wherein:

the first nodes of the plurality of radio frequency switch units are connected as a common node.

According to still another aspect of the present application, there is provided an integrated circuit chip including the radio frequency switching unit as described above.

According to yet another aspect of the present application, there is provided an electronic device comprising an integrated circuit chip as described above.

The technical scheme provided by the embodiment of the application can comprise the following beneficial effects:

in the embodiments of the application, the pair of the two inductors is used in the radio frequency switch unit, and the two inductors are arranged adjacently and the directions of the generated induction magnetic fields are opposite, so that the radio frequency switch circuit has simple structure and compact layout, and therefore, the occupied chip area is smaller.

It is to be understood that both the foregoing general description and the following description are exemplary and explanatory only and are not restrictive of the application as claimed.

Drawings

The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the application and together with the description, serve to explain the principles of the application.

FIG. 1 shows a schematic diagram of a radio frequency switching unit according to an embodiment of the application;

FIGS. 2A and 2B are schematic diagrams of equivalent circuits of the RF switch unit of FIG. 1 in the on condition;

fig. 3A and 3B show equivalent circuit schematic diagrams of the radio frequency switching unit of fig. 1 in an off condition;

fig. 4 shows a schematic diagram of a radio frequency switching unit according to another embodiment of the application;

FIG. 5 illustrates a schematic diagram of a first isolation enhancement module in accordance with an embodiment of the present application;

FIG. 6 illustrates a schematic diagram of a second isolation enhancement module in accordance with an embodiment of the present application;

FIG. 7 illustrates a schematic diagram of a third isolation enhancement module in accordance with an embodiment of the present application;

FIG. 8A shows a schematic diagram of a radio frequency switching circuit according to an embodiment of the application;

FIG. 8B shows an equivalent circuit schematic diagram of the RF switch circuit of FIG. 8A with the first channel in on condition;

Fig. 9 shows a schematic structural view of a switch module according to an embodiment of the present application;

fig. 10 shows a schematic structural view of a switch module according to another embodiment of the present application;

fig. 11 shows a schematic structural view of a switch module according to still another embodiment of the present application;

fig. 12 shows a schematic structural view of a switch module according to still another embodiment of the present application;

fig. 13 shows a schematic structural view of a switch module according to still another embodiment of the present application;

FIG. 14 shows a schematic diagram of an arrangement of inductor pairs according to an embodiment of the present application;

FIG. 15 shows a schematic diagram of an integrated circuit chip according to an embodiment of the application;

fig. 16 shows a schematic diagram of an electronic device according to an embodiment of the application.

Detailed Description

Reference will now be made in detail to exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, the same numbers in different drawings refer to the same or similar elements, unless otherwise indicated. The implementations described in the following exemplary examples do not represent all implementations consistent with the application. Rather, they are merely examples of apparatus and methods consistent with aspects of the application as detailed in the accompanying claims.

Fig. 1 is a schematic diagram of a rf switch unit 100 according to an embodiment of the application. As shown in fig. 1, in this embodiment, the radio frequency switch unit 100 includes a first inductor pair 110, a first switch module 105, a second switch module 106, and a first snubber circuit 160. The first inductor pair 110 includes a first inductor 103 and a second inductor 104, a first terminal 1031 of the first inductor 103 is connected to the first node 101 of the radio frequency switch unit 100, a second terminal 1032 of the first inductor 103 is connected to a second terminal 1042 of the second inductor 104, and a first terminal 1041 of the second inductor 104 is connected to the second node 102 of the radio frequency switch unit 100.

The first switch module 105 is configured to be turned on or off under the control of the control signal, and has a first end 1051 connected to the second end 1032 of the first inductor 103 and a second end 1042 of the second inductor 104, and a second end 1052 thereof is grounded. The second switch module 106 is configured to be turned on or off together with the first switch module 105 under the control of the same control signal as the first switch module 105, and has a first terminal 1061 connected to the second node 102, a second terminal 1062 connected to the first terminal 1601 of the first tank circuit 160, and a second terminal 1602 of the first tank circuit 160 connected to ground.

The first snubber circuit 160 includes a first resistor 109 and a first capacitor 111 connected in parallel, the first end of the first resistor 109 and the first end of the first capacitor 111 being connected together as a first end 1601 of the first snubber circuit 160, the second end of the first resistor 109 and the second end of the first capacitor 111 being connected together as a second end 1602 of the first snubber circuit 160.

As used herein, "connected" may refer to two elements being directly connected or two elements being indirectly connected through a third element. For example, "the first terminal 1031 of the first inductor 103 is connected to the first node 101 of the radio frequency switch unit 100" may mean that the first terminal 1031 of the first inductor 103 is directly connected to the first node 101, or may mean that the first terminal 1031 of the first inductor 103 is connected to the first node 101 through other modules (such as an isolation enhancement module as described below).

The first inductor 103 and the second inductor 104 of the first inductor pair 110 may be disposed to be adjacent to each other and to generate induced magnetic fields in opposite directions, so that the layout is compact and the circuit size is reduced.

In the radio frequency switching unit embodiments employing inductive pairs, the layout of the inductive pairs affects the size of the circuit dimensions to a large extent. When the inductor is excited by a signal, an induced magnetic field is generated, an induced electric field is generated by the induced magnetic field, and radiation is generated by the induced electric field, so that energy loss is generated. For example, an induced electric field may generate eddy currents in a circuit medium and electromagnetic radiation in space. This loss is exacerbated if two inductors are placed in close proximity, which can create mutual coupling between them. According to the embodiment of the application, the mutual coupling between the two inductors is at least partially reduced by configuring the two inductors of the inductor pair to generate the opposite directions of the induction magnetic fields, so that the directions of the induction electric fields caused by the induction magnetic fields of the two inductors are also opposite, and the induction electric fields are partially or completely counteracted, thereby reducing or eliminating the energy loss caused by the induction electric fields, and further reducing the chip area occupied by the radio frequency switch unit by arranging the two inductors of the inductor pair to be close to each other.

For example, the first inductor 103 and the second inductor 104 of the first inductor pair may be disposed adjacent to each other such that the direction of the induced magnetic field generated by the first inductor 103 is opposite to the direction of the induced magnetic field generated by the second inductor 104.

In one example, the first inductor 103 and the second inductor 104 are spiral inductors, which may be arranged in opposite spiral directions in the radio frequency switching unit. For example, the spiral direction of one inductor is clockwise and the other is counter-clockwise.

In one example, the first inductance 103 and the second inductance 104 are arranged as mirror images of each other in the radio frequency switching unit.

Fig. 14 shows a schematic diagram of an arrangement of an inductor pair in a radio frequency switching unit 100 according to an embodiment of the application. Fig. 14 is a schematic diagram of the inductance pair of the rf switch unit 100 from a direction perpendicular to the wiring layer of the rf switch unit. In one example, the radio frequency switch unit may be an integrated circuit chip.

As shown in fig. 14, the pair 1400 includes two inductors, which are respectively composed of a first microstrip line 1410 and a second microstrip line 1420, and the first microstrip line 1410 is wound into a first spiral pattern S1 and the second microstrip line 1420 is wound into a second spiral pattern S2. The first end 1401 and the second end 1402 of the first microstrip line 1410 are respectively a first end and a second end of the first inductor. The first end 1403 and the second end 1402 of the second microstrip line 1420 serve as a first end and a second end of the second inductor, respectively. The second end 1402 of the first microstrip line 1410 and the second end 1402 of the second microstrip line 1420 are connected together to form a common end 1402 of the first inductor and the second inductor, and the first microstrip line 1410 and the second microstrip line 1420 form a combined microstrip line. The first end 1401 of the first inductor, the first end 1403 of the second inductor, the second end 1402 of the first inductor and the second inductor are connected to other parts of the radio frequency switching unit by connecting wires, respectively.

The combined microstrip line (first/second microstrip line) of the embodiment of the present application may be composed of a single layer or multiple layers of metal materials. In one example, the merged microstrip line is composed of multiple layers of metallic materials, where each layer of metallic material is located in a different wiring layer of the radio frequency switch unit. And multiple layers of metal materials positioned in different wiring layers are overlapped together to form a combined microstrip line, and the metal materials of the layers are connected through interlayer through holes. In another example, the combined microstrip line is composed of a single layer of metal material, which may be located in the same or different wiring layers of the radio frequency switch unit. For example, a portion of the single layer of metal material is located in one wiring layer and the other portion is located in a different wiring layer or layers. Likewise, the single layers of metal material located in the different wiring layers are connected by vias.

In the example of fig. 14, both spiral patterns S1 and S2 comprise a plurality of turns, it being understood that they may also each comprise one turn, or one comprising a plurality of turns and the other comprising a plurality of turns.

As an example, the first microstrip line 1410 and the second microstrip line 1420 may be wound in opposite directions such that the spiral directions of the first spiral pattern S1 and the second spiral pattern S2 are opposite, so that the directions of induced magnetic fields caused by currents in the microstrip lines forming the two spiral patterns S1 and S2 are opposite when the pair of inductors is in an operating state. For example, one of S1 and S2 is made to spiral counterclockwise and the other is made to spiral clockwise. The direction from the first end of the first or second inductor to the common terminal may be referred to herein as a spiral direction, or the direction from the common terminal to the first end of the first or second inductor may be referred to herein as a spiral direction.

In the embodiment of fig. 14, the first microstrip line 1410 is wound in a first spiral pattern S1 in a counterclockwise direction from the first end 1401 to the common end 1402 (inner turn first and outer turn) while winding, and the second microstrip line 1420 is wound in a second spiral pattern S2 in a clockwise direction from the first end 1403 to the common end 1402 (inner turn first and outer turn) while winding. It will be appreciated that both may also be wound one inside-out, the other outside-in (outside-in turns then inside turns), or both. It will be appreciated that the microstrip line need not always be wound in an inside-out or outside-in direction when wound into a spiral pattern S1 or S2, but may be redirected one or more times. For example, it is first from inside to outside, and halfway from outside to inside, or vice versa.

In summary, each of the spiral patterns S1 and S2 may wind the microstrip line from the respective first end to the common end in one of the following manners:

from inside to outside;

from outside to inside;

a combination of the two.

In the embodiment of fig. 14, the two spiral patterns S1 and S2 do not overlap and are adjacent but at a distance D in a direction parallel to the wiring layer of the radio frequency switching unit. In the embodiment of the present application, since the mutual coupling between the two inductors is low as described above, the two spiral patterns S1 and S2 can be arranged as close as possible (but without overlapping portions), thereby reducing the circuit size and the cost. In one example, the spacing between the two spiral patterns S1 and S2 (distance D as shown in fig. 14) may be at least about 3 microns. The "distance between two spiral patterns" as referred to herein refers to the distance between the microstrip lines of the two spiral patterns closest to each other. As shown in fig. 14, the distance D is the distance between adjacent outermost turns of S1 and S2. In practice, the minimum spacing between the two spiral patterns is determined by the chip manufacturing process.

In the example of fig. 14, the first microstrip line 1410 is equal in length to the second microstrip line 1420. That is, the common terminal 1402 is located at the midpoint of the combined microstrip line. It will be appreciated that the common terminal 1402 may be located at other locations than the midpoint of the combined microstrip line, such as closer to S1 or S2.

As shown in fig. 14, in this embodiment, the spiral patterns S1 and S2 are mirror images, both of which are mirror images, and are shown in fig. 14 as being axisymmetric. I.e. the spiral patterns S1 and S2 have the same configuration, e.g. the same number of turns, microstrip line linewidths, spacing between adjacent turns, etc., except that their patterns are reversed (winding wise reversed), both in a symmetrical/mirrored relationship with respect to a plane perpendicular to the wiring layer in between. S1 and S2 may not be arranged in mirror image, for example, S1 and S2 may have different configurations, for example, S1 and S2 may have different numbers of turns, microstrip line widths, or pitches between adjacent turns, so long as the induced magnetic fields of the wound spiral patterns S1 and S2 are opposite in direction.

It will be appreciated that the arrangement of the first spiral pattern S1 and the second spiral pattern S2 in fig. 14 is interchangeable.

In the pair of inductors according to the above embodiment of the present application, the microstrip lines of the two inductors have a common terminal and are arranged in two spiral patterns with opposite spiral directions, and when an excitation signal is applied to the pair of inductors in an operation state, the excitation signal is split into the two spirals (microstrip lines of the two inductors) at the common terminal, so that the directions of induced magnetic fields generated by currents in the two spirals are opposite, thereby at least partially reducing mutual coupling/inductance between the two inductors.

In the above described inductor pair embodiments, the inductor pair is arranged in an integrated circuit chip with three terminals: a common terminal 702, a head terminal 701 which is a first branch terminal of the inductor pair, and a tail terminal 703 which is a second branch terminal of the inductor pair. As previously described, the three ends of the pair of inductors may be connected to an excitation signal or other circuit portion by leads. For example, the radio frequency excitation signal may be incident from a common termination of the pair of inductors, the radio frequency excitation signal being split at the common termination to a first microstrip line (first inductor) and a second microstrip line (second inductor). The radio frequency excitation signal is typically a periodically varying signal, for example a sinusoidal signal. Let the excitation signal accessed at the common terminal be i _com ＝I _com Sin ωt. The excitation signal splits at the common terminal 702 into two branches, one flowing through the common terminal 702 to the first spiral pattern S1 of the first branch terminal (head terminal) 701 and the other flowing through the common terminal 702 to the second spiral pattern S2 of the second branch terminal (tail terminal) 703. Let the excitation signal in the first spiral pattern S1 be i ₁ (t) the excitation signal in the first spiral pattern S1 is i ₂ (t) assuming no reflection of the signal, i ₁ (t)+i ₂ (t)＝I _com Sin ωt. If the common terminal is located at the midpoint of the combined microstrip line and S1 and S2 are axisymmetric patterns, the excitation signals in S1 and S2 are identical at any time, i.e Excitation signal i in an inductor pair ₁ (t) and i ₂ (t) is a periodically varying signal whose current magnitude varies periodically and thus the induced magnetic field produced is also periodically varying unevenly; the changing magnetic field in turn generates an electric field, thereby generating electromagnetic waves. In the case where the excitation signals in S1 and S2 are identical, since the spiral directions of S1 and S2 are opposite, the induced magnetic field generated at any time S1 is identical in magnitude and opposite in direction to the induced magnetic field generated at S2,the corresponding induced electric fields are also opposite in direction and periodically change direction. Therefore, the induced magnetic fields generated by S1 and S2 are almost completely cancelled in many areas, and partially cancelled in some areas, so that the corresponding electric field or electromagnetic wave caused by the induced magnetic fields are cancelled, thereby reducing the loss of the inductance pair.

If the common terminal is not located at the midpoint of the combined microstrip line, or if the S1 and S2 are patterns with different configurations, it may not be ensured that the excitation signals in the S1 and S2 are identical, so that the degree of mutual cancellation of the induced magnetic fields of the S1 and S2 is reduced compared with the case that the excitation signals in the S1 and S2 are identical, but the induced magnetic fields generated by the S1 and S2 still partially cancel each other at any moment, so that the electromagnetic radiation intensity is weakened mutually, and the loss of the inductance pair is reduced to a certain extent.

It should be noted that, theoretically, the pair of inductors having three ports (the common port, the head end of the combined microstrip line as the first branch port, and the tail end of the combined microstrip line as the second branch port) as described above is a passive lossless network, and since the passive network has reciprocity, the loss of the pair of inductors and the transmission characteristics thereof are reciprocal regardless of which one of the three ports the excitation signal is input from.

The first inductor pair 110 formed by the first inductor 103 and the second inductor 104 in the radio frequency switch unit 100 may be arranged as described above. The above description of the inductor pairs applies to all of the inductor pairs referred to herein and will not be repeated elsewhere herein for brevity.

In the above or in the following description, for convenience of explanation, two ends of a device or module such as an inductor, a switch module, a capacitor, or a resistor are referred to as a first end and a second end, respectively, and it is understood that such naming is only for distinguishing two ends thereof, and any one end of the device or module may be referred to as a first end and the other end may be referred to as a second end.

In this embodiment, the radio frequency switch unit 100 is a single pole single throw switch. The first switching module 105 and the second switching module 106 are turned on or off under the control of the same control signal, thereby turning off or on the channel between the first node 101 and the second node 102. The first switch module 105 and the second switch module 106 used in the radio frequency switch unit 100 of the present embodiment may be any suitable switch module such that the channel between the first node 101 and the second node 102 is on when the first switch module 105 and the second switch module 106 are off, and the channel between the first node 101 and the second node 102 is off when the first switch module 105 and the second switch module 106 are on. In one embodiment, the first and second switch modules 105, 106 may each include a transistor switch device having a first end as the first end 1051/1061 of the first switch module 105/second switch module 106 and a second end as the second end 1052/1062 of the first switch module 105/second switch module 106. The transistor switching device is turned on or off under control of a control signal to control the turning off or on of a channel between the first node 101 and the second node 102. The control signal is connected to the control terminal of the transistor switching device. In another embodiment, in addition to the transistor switching device, each of the first switching module 105 and the second switching module 106 may further include an ac suppressing device having one end connected to a control signal of the transistor switching device and the other end connected to the control terminal of the transistor switching device to isolate a signal terminal of the transistor switching device from a control signal source. An example of the structural composition that the first switch module 105 and the second switch module 106 can take is described below with reference to fig. 9.

Fig. 9 shows a schematic structural diagram of a switch module 900 according to an embodiment of the application. As shown in fig. 9, the switching module 900 includes an ac containment device 141 and a transistor switching device 142. In this embodiment, ac suppression device 141 includes a resistor R1 and transistor switching device 142 includes a transistor T1. One end of the resistor R1 is connected to the control signal of the switch module 900, and the other end is connected to the control end of the transistor T1. The transistor T1 also has two other ends, which are a first end 901 and a second end 902 of the switch module 900, respectively. The transistor T1 is turned on or off according to a control signal, thereby forming an on or off state of the switching module 900. In one example, when the control signal is at a high level, the transistor T1 is turned on, and the switch module 900 may be equivalent to a resistor with a small impedance; when the control signal is low, the transistor T1 is turned off, and the switch module 900 can be equivalent to a capacitor.

Here, "high level" refers to a level range in which a transistor can be turned on, for example, 0V, 4V, or the like; "Low" refers to a range of levels that can cause the transistor to turn off, such as-4V, etc. It will be appreciated that although the transistor is described herein as being turned on at a high level and turned off at a low level, the transistor may be operated in a mode that is turned off when the control signal is high and turned on when the control signal is low. For example, the switching module shown in fig. 13 may implement a control logic change of the switching module by exchanging input voltages of the reference voltage port and the control voltage port.

When the switch module 900 is used as the first switch module 105 in the radio frequency switch unit 100, the second end 902 of the switch module 900 is grounded and the first end 901 is connected to the second ends 1032, 1042 of the first and second inductors 103, 104. When the switch module 900 is used as the second switch module 106 in the rf switch unit 100, the second terminal 902 of the switch module 900 is connected to the first terminal 1601 of the first snubber circuit 160, and the first terminal 901 is connected to the second node 102.

Returning to the radio frequency switching unit 100 of fig. 1. As described above, when the control signal is at the low level, the transistors T1 of the first and second switch modules 105 and 106 are turned off, and the first and second switch modules 105 and 106 are in the off state, the first and second switch modules 105 and 106 may be equivalent to capacitances having smaller capacitance values, respectively. Fig. 2A and 2B show schematic diagrams of an equivalent circuit 200 of the radio frequency switching unit 100 in this case. As shown in fig. 2A, when the first switch module 105 is in the off state, it is equivalent to the capacitor 201, where one end of the capacitor 201 is grounded and the other end is connected to the first inductor 103 and the second inductor 104. In addition, the second switch module 106 is equivalent to the capacitor 502, one end of which is connected to the second node, and the other end of which is connected to the RC parallel circuit of the first snubber circuit 160. Since the capacitance of the capacitor 502 is smaller, the capacitor 502 and the first absorption circuit 160 can be regarded as a capacitor 502' with smaller capacitance, as shown in fig. 2B. It can be seen that the channel between the first node 101 and the second node 102 is in this case equivalent to a two-stage L-shaped low-pass network, in an on-state. That is, when the first and second switching modules 105 and 106 are in an off state under the control of the control signal, the channel between the first and second nodes 101 and 102 is in an on state.

Further, when the control signal is at a high level, the transistors T1 of the first and second switch modules 105 and 106 are turned on, and the first and second switch modules 105 and 106 are in a turned-on state, as described above, when the first and second switch modules 105 and 106 are equivalent to resistances having very small impedances, respectively. Fig. 3A and 3B show schematic diagrams of an equivalent circuit 300 of the radio frequency switching unit 100 in this case. As shown in fig. 3A, when the first switch module 105 is in the on state, it is equivalent to a resistor 301 with very small impedance, one end of the resistor 301 is grounded, and the other end is connected to the first inductor 103 and the second inductor 104. In addition, the second switch module 106 is equivalent to a resistor 601 with very small impedance when in the on state, one end of the resistor 601 is connected to the second node 102, and the other end is connected to the RC parallel circuit of the first snubber circuit 160. Also shown in fig. 3A are a first node side resistor 302 and a second node side resistor 303 in the case where the first node 101 and the second node 102 of the radio frequency switch unit 100 have loads on both sides. Since the resistor 601 is very small, it can be ignored (as shown in fig. 3B), the circuit of fig. 3A is again equivalent to fig. 3B. In fig. 3B, resistor 601 is ignored. The first node side resistor 302 and the second node side resistor 303 are used as ideal impedance for representing the circuit connected to two ends of the radio frequency switch unit when the radio frequency switch unit is applied, and are only used for illustrating the principle of the radio frequency switch unit of the application.

In general, the impedance of the resistor 301 is much smaller than the impedance of the first node side resistor 302 and the second node side resistor 303. Thus, when a signal is transmitted from the first inductance 103 or the second inductance 104 to the resistance 301, the impedance at the first node 101 is mismatched, and the signal is reflected back with very high reflectivity. In addition, the second inductor 104 and the first capacitor 111 form an LC resonance, and thus, by setting the resistance of the first resistor 109 such that impedance matching is achieved at the second node 102, a signal from the second node 102 is substantially absorbed by the first resistor 109 and is not reflected back, thereby avoiding affecting a circuit connected to the second node 102. It can be seen that when the control signal is high, the transistors T1 of the first and second switch modules 105 and 106 are turned on, the signal from the first node 101 is substantially reflected back to the first node 101, and the signal from the second node 102 is substantially absorbed by the first resistor 109 without being reflected back to the second node to affect other circuits. Thus, the channel between the first node 101 and the second node 102 is shut off at this time.

It should be understood that any control signal/voltage referred to herein may be a separate control signal/voltage or may be a shared/common control signal/voltage in any combination. It should be understood that any electrical ground referred to herein may be a separate ground connection/node, or may be a shared/common ground node in any combination (ground may also refer to a relative ground, a floating ground, or some desired potential difference).

The switch module 900 shown in fig. 9 is only one example of a structural composition that the first switch module 105 and the second switch module 106 may take. It will be appreciated that the first and second switch modules 105, 106 may take other suitable forms. Fig. 10-13 illustrate other embodiments of structural compositions that may be employed by the first switch module 105 and the second switch module 106.

Fig. 10 shows a schematic structural diagram of a switch module 1000 according to another embodiment of the present application. As shown in fig. 10, the switching module 1000 also includes an ac containment device 141 and a transistor switching device 142. The difference from the embodiment of fig. 9 is that: ac suppression device 141 is inductance L1 in this embodiment, rather than resistance R1. Other parts of the present embodiment are the same as those of the embodiment of fig. 9, and the connection relationship and the operation principle of the parts are the same as those of the embodiment of fig. 9, and are not described here again. Similarly, when the control signal is at a high level, the transistor T1 is turned on, and the switch module 1000 can be equivalent to a resistor with small impedance; when the control signal is at a low level, the transistor T1 is turned off, and the switch module 1000 can be equivalent to a capacitor with a smaller capacitance. When used in the rf switch unit 100, the operating principle, the equivalent circuit diagram, etc. of the rf switch unit are the same as those of the foregoing embodiments, and are not described herein again.

Fig. 11 shows a schematic structural diagram of a switch module 1100 according to a further embodiment of the application. In this embodiment, the switching module 1100 includes an inductance L2 in addition to the ac suppressing device 141 and the transistor switching device 142. The ac suppressing device 141 is a resistor R1, the transistor switching device 142 is a transistor T1, the inductor L2 is connected in parallel therewith, and both ends of the inductor L2 are connected to the other ends of the transistor T1 except the control end, respectively. When the transistor T1 is in an off state under the action of a control signal, the transistor T1 is equivalent to parasitic capacitance in the transistor T1, so that an LC parallel resonance circuit is formed with the inductor L2, larger impedance is generated, the isolation of the switch module is enhanced, and the loss of the radio frequency switch unit is reduced. On the contrary, when the transistor T1 is conducted under the action of the control signal, the inductance L2 and the parasitic impedance in the transistor T1 form a parallel impedance network, so that the conduction impedance of the switch module is reduced, and the isolation degree of the radio frequency switch unit is enhanced. The same parts as those of the embodiment of fig. 9 will not be described again here. Similarly, when the control signal is at a high level, the transistor T1 is turned on, and the switch module 1100 can be equivalent to a resistor with small impedance; when the control signal is at a low level, the transistor T1 is turned off, and the switching module 1100 may be equivalent to a resistor with a large resistance (generated by parasitic capacitance and L2 parallel resonance). When used in the rf switch unit 100, the operating principle, the equivalent circuit diagram, etc. of the rf switch unit are the same as those of the foregoing embodiments, and are not described herein again.

Fig. 12 shows a schematic structural diagram of a switch module 1200 according to still another embodiment of the present application. In this embodiment, the transistor switching device 142 may be composed of m×n transistors, i.e., T11, … …, tnm as shown in fig. 12, and the ac suppressing device 141 may be a resistive voltage dividing network. The mxn transistors may be arranged in an array, for example, in m columns and n rows, where m is an integer greater than or equal to 1, n is an integer equal to or greater than 1, and m and n are not both 1. In the array arrangement, each column of transistors is connected in series, the control terminal of each row of transistors is connected to the ac suppression device 141, and the second terminal of the first row of transistors is connected to the second terminal 902 of the switch module 1200, the first terminal of the nth row of transistors is connected to the first terminal 901 of the switch module 1200, and the two terminals of the other transistors in each column are connected in series in turn. The resistor divider network 141 provides the connected control signals to each row of transistors to control the on or off of each transistor. In one example, the turn-on voltage of each row of transistors is the same.

As used herein, "first end of a transistor" and "second end of a transistor" refer to the other ends of the transistor except the control end, and are referred to as "first end" and "second end" respectively, only for distinguishing them, it should be understood that either end of the other ends of the transistor except the control end may be referred to as "first end" and the other end may be referred to as "second end". For example, when the three terminals of the transistor are a gate, a source, and a drain, the control terminal may be the gate, the first terminal may be one of the source and the drain, and the second terminal may be the other pole.

In the embodiment of fig. 12, the voltage-bearing capability of the transistor switching device can be improved by connecting n-stage transistors in series, and the current-conducting capability of the transistor switching device 142 can be improved by connecting m-column transistors in parallel, so that the switching power of the switching module 1200 is improved, and the rf switching unit adopting the switching module of the embodiment can be applied to high-power switching products, and the application range of the rf switching unit is greatly expanded.

Likewise, when the control signal is at a high level, the transistors T11, … …, tnm are turned on, and the switch module 1200 can be equivalent to a resistor with small impedance; when the control signal is low, the transistors T11, … …, tnm are turned off, and the switch module 1200 can be equivalent to a capacitor. When used in the rf switch unit 100, the operating principle, the equivalent circuit diagram, etc. of the rf switch unit are the same as those of the foregoing embodiments, and are not described herein again.

Fig. 13 shows a schematic structural diagram of a switch module 1300 according to a further embodiment of the present application. The same parts as in the embodiment of fig. 9-12 are not described in detail herein, and only the differences will be described below. As shown in fig. 13, the switching module 1300 includes a transistor T1, a first ac suppression device 141_1, a second ac suppression device 141_2, a third ac suppression device 141_3, a first capacitor C1, and a second capacitor C2. A first end of the first ac throttling device 141_1 serves as a first control signal end, and a second end of the first ac throttling device 141_1 is connected to a control end of the transistor T1; one end of the first capacitor C1 is connected to the first end of the transistor T1, the other end of the first capacitor C1 is used as the first end 901 of the switch module 1300, one end of the second ac suppression device 141_2 is connected between the first end of the transistor T1 and the first capacitor C1, and the other end of the second ac suppression device 141_2 is used as a second control signal end; one end of the second capacitor C2 is connected to the second end of the transistor T1, the other end of the second capacitor C2 is used as the second end 902 of the switch module 1300, one end of the third ac suppression device 141_3 is connected between the second end of the transistor T1 and the second capacitor C2, and the other end of the third ac suppression device 141_3 is connected to a second control signal end; one of the first control signal end and the second control signal end is connected with a control signal, and the other is connected with a reference level.

When the first control signal end is accessed to a control signal, the second control signal end is accessed to a reference level; and when the first control signal end accesses to the reference level, the second control signal end accesses to the control signal.

When the second control signal terminal is connected to the reference level, the reference level is set to a high level, in which case, when the first control signal terminal is connected to the low level control signal, the transistor T1 is turned off, i.e., the switching module 1300 is turned off; when the first control signal terminal is connected to a high level control signal, the transistor T1 is turned on, that is, the switch module 1300 is turned on.

When the first control signal terminal is connected to the reference level, the reference level is set to a low level, in which case, when the second control signal terminal is connected to the low level control signal, the transistor T1 is turned on, that is, the switch module 1300 is turned on, and when the second control signal terminal is connected to the high level control signal, the transistor T1 is turned off, that is, the switch module 1300 is turned off.

The transistor T1 shown in fig. 13 is turned on, and the switch module 1300 can be equivalently a resistor with small impedance; the transistor T1 is turned off, and the switch module 1300 may be equivalent to a capacitor.

The above illustrates that the switch module 1300 shown in fig. 13 can implement the switching of the control logic of the switch module 1300 by configuring the reference signal, so as to facilitate the application of the switch and the integration with other functions.

The self-resonant frequency of the first capacitor C1 and the second capacitor C2 is close to the center frequency of the working frequency band of the switch module 1300, and is mainly used for blocking the two ends of the transistor T1 in the switch module 1300 from the two ends of the switch module 1300; the first ac suppression device 141_1, the second ac suppression device 141_2, or the third ac suppression device 141_3 may be any one of an ac suppression resistor, an ac suppression inductance, or other ac suppression network.

When the switch module 1300 is used in the rf switch unit 100, the working principle, the equivalent circuit diagram, etc. of the rf switch unit are the same as those of the foregoing embodiments, and are not repeated herein.

In one example, the transistors in the above switch module embodiments may be CMOS (complementary metal oxide semiconductor) devices, in particular silicon-based CMOS, such as silicon-based NMOS or silicon-based PMOS. In another example, the transistor may be a Bi-CMOS, particularly a silicon germanium Bi-CMOS. In yet another example, the transistor may be a HEMT (high electron mobility transistor), for example, gallium arsenide pHEMT (pseudomorphic high electron mobility transistor), indium phosphide pHEMT, or gallium nitride HEMT.

In the above described switch module embodiments 900, 1000, 1100, 1200 and 1300, each transistor is shown and described as a device with three terminals (e.g. transistor is a triode, a field effect transistor, etc.), but it should be understood that each transistor may also be a device with two terminals (e.g. diode, PIN tube, etc.) or a combination of two terminal devices with other devices, e.g. a diode or a combination of PIN tube and capacitance (e.g. transistor T1 in fig. 13 may be regarded as a diode or PIN tube), in which case the control terminal of the transistor and one of the two terminals of the diode are in fact one terminal, i.e. one of the two terminals of the diode is simultaneously the control signal input terminal, the other terminal being the reference voltage terminal.

The switch module embodiments 900, 1000, 1100, 1200, and 1300 described above are merely illustrative examples, and it is understood that the switch modules included in the rf switch unit embodiments of the present application may be formed in other suitable configurations. In either form, the equivalent circuits of the above-described rf switch unit 100, fig. 2A and 2B, and 3A and 3B, are applicable in the case where the switch modules are equivalent to a resistor and a capacitor having small impedance, respectively, when turned on and off, and the operation principle, effects, etc. of the rf switch unit 100 are also the same.

Fig. 4 is a schematic diagram of a radio frequency switch unit 100 according to another embodiment of the application. Elements in fig. 4 that are identical to elements in fig. 1 are denoted by the same reference numerals, and only differences between the two embodiments will be described below. The radio frequency switching unit 100 is also a single pole single throw switch, which differs from the radio frequency switching unit in the embodiment of fig. 1 in that it further comprises an isolation enhancement module 170, wherein the first end 1031 of the first inductor 103 is connected to the first node 101 via the isolation enhancement module 170. The isolation enhancement module 170 includes K first isolation enhancement modules 171-1 through 171-K, M, second isolation enhancement modules 172-1 through 172-M, and N third isolation enhancement modules 173-1 through 173-N, each of K, M and N being an integer greater than or equal to 0 and K, M and N not being equal to 0 at the same time, connected in series. K. M and N may be the same number or different numbers. As shown in fig. 4, a first terminal of a first (1 st first isolation enhancement module 171-1 in the example of fig. 4), M second isolation enhancement modules, and N third isolation enhancement modules connected in series is connected to the first node 101, a second terminal of a last (N third isolation enhancement module 173-N in the example of fig. 4) is connected to the first terminal 1031 of the first inductor 103, and a second terminal of each of the other is connected to a first terminal of a next.

Fig. 5-7 illustrate exemplary composition diagrams of the first, second, and third isolation enhancement modules, respectively. As shown in fig. 5, the first isolation enhancement module 171-i (where i=1, … …, K) includes the second inductor pair 120, the third switch module 107, and the fourth switch module 108. The second inductor pair 120 includes a third inductor 121 and a fourth inductor 122, a first end 1211 of the third inductor 121 serving as a first end of the first isolation enhancement module 171-i, and a second end 1212 of the third inductor 121 connected to a second end 1222 of the fourth inductor 122. The first end 1071 of the third switch module 107 is connected to the second end 1212 of the third inductor 121 and the second end 1222 of the fourth inductor 122, and the second end 1072 of the third switch module 107 is grounded. The first terminal 1081 of the fourth switch module 108 is coupled to the first terminal 1221 of the fourth inductor 122 and acts as a second terminal for the first isolation enhancement module 171-i. The second end 1082 of the fourth switch module 108 is grounded. The third and fourth switch modules 107, 108 are adapted to be turned on or off together with the first and second switch modules 105, 106 under control of said control signal.

In one example, the first isolation enhancement module 171-i is a reflective module. When the third and fourth switching modules 107, 108 are turned on together with the first and second switching modules 105, 106 under the control of the control signal, the channel between both ends of the first isolation enhancement module 171-i is in an off state, and the first isolation enhancement module 171-i reflects the signal input thereto back, thereby enhancing the signal isolation between the first node 101 and the second node 102. When the third and fourth switching modules 107, 108 are turned off together with the first and second switching modules 105, 106 under the control of the control signal, the channel between both ends of the first isolation enhancement module 171-i is in a conductive state, and the first isolation enhancement module 171-i allows a signal to be transmitted from one end thereof to the other end thereof.

It will be appreciated that although the K first isolation enhancement modules 171-i (i=1, … …, K) have the same structural composition, they may have the same or different component parameters. In one example, at least one of the third inductance, the fourth inductance, the third switching module, and the fourth switching module of at least one of the K first isolation enhancement modules has different parameters than the other first isolation enhancement modules.

As shown in fig. 6, the second isolation enhancement module 172-i (where i=1, … …, M) includes: a third inductor pair 130 and a fifth switch module 112. The third inductor pair 130 includes a fifth inductor 131 and a sixth inductor 132, a first end 1311 of the fifth inductor 131 being a first end of the second isolation enhancement module 172-i, a second end 1312 of the fifth inductor 131 being connected to a second end 1322 of the sixth inductor 132. The first terminal 1121 of the fifth switch module 112 is connected to the second terminal 1312 of the fifth inductor 131 and the second terminal 1322 of the sixth inductor 132, and the second terminal 1122 of the fifth switch module 112 is grounded. A first end 1321 of the sixth inductance 132 serves as a second end of the second isolation enhancement module 172-i. The fifth switching module 112 is adapted to be turned on or off together with the first and second switching modules 105, 106 under control of the control signal.

In one example, the second isolation enhancement module 172-i is a reflective module. When the fifth switch module 112 is turned on with the first and second switch modules 105, 106 under the control of the control signal, the channel between the two ends of the second isolation enhancement module 172-i is in an off state, and the second isolation enhancement module 172-i reflects the signal input thereto back, thereby enhancing the isolation of the signal between the first node 101 and the second node 102. When the fifth switching module 112 is turned off together with the first and second switching modules 105, 106 under the control of the control signal, the channel between both ends of the second isolation enhancement module 172-i is in a conductive state, and the second isolation enhancement module 172-i allows a signal to be transmitted from one end thereof to the other end.

It will be appreciated that although the M second isolation enhancement modules 172-i (i=1, … …, M) have the same structural composition, they may have the same or different component parameters. In one example, at least one of the fifth inductance, the sixth inductance, and the fifth switching module of at least one of the M second isolation enhancement modules has different parameters than the other second isolation enhancement modules.

As shown in fig. 7, the third isolation enhancement module 173-i (where i=1, … …, M) includes: a seventh inductor 114 and a sixth switching module 113. The first end 1141 of the seventh inductor 114 is used as the first end of the third isolation enhancement module 173-i, and the second end 1142 of the seventh inductor 114 is connected to the first end 1131 of the sixth switch module 113, and the second end 1132 of the sixth switch module 113 is grounded. The first terminal 1131 of the sixth switch module 113 serves as a second terminal of the third isolation enhancement module 173-i. The sixth switching module 113 is configured to be turned on or off together with the first and second switching modules 105, 106 under the control of the control signal.

In one example, the third isolation enhancement module 173-i is a reflective module. When the sixth switching module 113 is turned on together with the first and second switching modules 105, 106 under the control of the control signal, the channel between both ends of the third isolation enhancement module 173-i is in an off state, and the third isolation enhancement module 173-i reflects the signal input thereto back, thereby enhancing the signal isolation between the first node 101 and the second node 102. When the sixth switching module 113 is turned off together with the first and second switching modules 105, 106 under the control of the control signal, the channel between both ends of the third isolation enhancement module 173-i is in a conductive state, and the third isolation enhancement module 173-i allows a signal to be transmitted from one end thereof to the other end thereof.

Also, it is understood that although the N third isolation enhancement modules 173-i (i=1, … …, N) have the same structural composition, they may have the same or different element parameters. In one example, at least one of the seventh inductance and the sixth switching module of at least one of the N third isolation enhancement modules has different parameters than the other third isolation enhancement modules.

In the embodiment of fig. 4, K first isolation enhancement modules are shown next to each other in series, M second isolation enhancement modules are shown next to each other in series, and N third isolation enhancement modules are shown next to each other in series, although it will be appreciated that the application is not limited thereto and that the same isolation enhancement modules need not be next to each other in series, but that other different isolation enhancement modules may be spaced apart. The k+m+n isolation enhancement modules may be connected in series in any combination order.

The radio frequency switch unit 100 as described above may be used in combination of a plurality of. Fig. 8 shows such an embodiment. As shown in fig. 8A, the rf switch circuit 600 includes J rf switch units 100-1, … …,100-J, where J is greater than or equal to 2, and each of the J rf switch units 100-1, … …,100-J may be any embodiment of the rf switch unit 100 described above with reference to fig. 1-7, which is not described herein. As previously described, the radio frequency switching units 100-1, … …,100-J each have a first node and a second node, each turned on or off under control of a respective control signal. In the rf switching circuit 600, the first nodes of the rf switching units 100-1, … …,100-J are connected together as one common node 101, and opposite thereto are J second nodes 102-1, … …,102-J. In one example, the respective control signals of the radio frequency switch units 100-1, … …,100-J are configured such that only one of the plurality of radio frequency switch units is turned on at the same time, thereby making the radio frequency switch circuit 600 a single pole, multi throw switch. For example, these control signals may be set such that only one is low at any time and the other is high. For example, in the case where J is 2, two control signals may be set to mutually inverted signals.

It will be appreciated that the control signals may also be configured such that the plurality of radio frequency switch units are turned on at the same time.

In one example, the radio frequency switching circuit 600 also includes a capacitor 116, as shown in fig. 8A, to achieve better impedance matching. Capacitor 116 has one end connected to common node 101 and the other end connected to ground.

Fig. 8B shows a schematic diagram of an equivalent circuit 700 of the radio frequency switching circuit 600 as a single pole, multi-throw switch. In this embodiment, it is assumed that the respective control signals of the radio frequency switch units 100-1, … …,100-J cause the channels of the radio frequency switch unit 100-1 to be in an on state, and the other channels to be in an off state, i.e., the channels between the common node 101 and the second node 102-1 are on, and the channels between the common node 101 and the other second nodes are off. It is assumed that the 1 st to J-th rf switch units 100-1, … …,100-J are each the structural composition of the rf switch unit 100 shown in fig. 1. In this case, the first switch module and the second switch module of the 1 st rf switch unit 100-1 are in an off state under the control of the control signal, and may be respectively equivalent to capacitors with smaller capacitance values, where the equivalent capacitor of the first switch module is grounded, and the equivalent capacitor of the second switch module is connected to the RC parallel circuit of the first snubber circuit. As described above, the equivalent capacitance of the second switch module and the first snubber circuit can be regarded as a capacitance with a smaller capacitance, such as the capacitance 502' -1 in fig. 8B. The first switch modules of the other rf switch units (the 2 nd to J th rf switch units) are in an on state under the control of the respective control signals, and may be respectively equivalent to resistors with smaller impedance (for example, the equivalent resistors 301-J of the first switch module of the J th rf switch unit shown in fig. 8B). In addition, as with the equivalent circuit of the rf switch unit 100, the equivalent resistance of the second switch module of the 2 nd to J rf switch units 100-2, … …,100-J may be ignored, resulting in the equivalent circuit diagram shown in fig. 8B. As can be seen in fig. 8B, the 1 st rf switch unit 100-1 is in a conductive state, i.e. the channel between the first node 101 and the second node 102-1 is conductive. As for the other 2 to J radio frequency switch units 100-2, … …,100-J, as previously described, the signal from the common node 101 is reflected back by the equivalent resistance of the respective first switch module due to impedance mismatch; in addition, by configuring the values of the first resistors of the first snubber circuits of the 2 nd to J-th radio frequency switch cells, the impedance at the second nodes 102-2, … …,102-J can be matched so that signals from these nodes are substantially absorbed by the respective first resistors.

The example in fig. 8 only shows the case that the rf switch unit of each channel is the embodiment shown in fig. 1, and it is understood that the case that the rf switch unit of each channel is other embodiments (for example, the embodiment of fig. 4) is similar to this, and will not be described herein. In addition, the case where any one channel is turned on and the other channels are turned off is similar to the above example, and will not be described here again.

In each of the above-described rf switching unit or rf switching circuit embodiments, one or more inductance pairs are used, which gives the rf switching unit or rf switching circuit of the present application the following advantages:

on one hand, the use of the inductance pair makes the circuit structure of the application simple (for example, devices such as lambda/4 wavelength microstrip line impedance converters are not needed), and the circuit structure is convenient for compact layout so as to reduce the circuit size and the cost. In addition, by arranging two inductors constituting an inductor pair to be positioned adjacent to each other, the circuit size can be greatly reduced.

On the other hand, as described above, in some embodiments of the present application, the loss of the radio frequency switching unit can be reduced by configuring the two inductors constituting the inductor pair such that their respective induced magnetic fields are opposite in direction, making the inductor pair a low-coupling inductor pair. In addition, since the coupling between the two inductors constituting the pair of inductors can be reduced in this way, the two inductors can be disposed closer together, further reducing the circuit size. In addition, as the loss is reduced, the quality factor of the inductor is improved, and the isolation of the circuit in the off state can be further improved.

The embodiment of the application also provides an integrated circuit chip comprising the radio frequency switch unit and an electronic device comprising the integrated circuit chip. Fig. 15 and 16 show schematic views thereof, respectively. As shown in fig. 15, the integrated circuit chip 1500 may include a radio frequency switch unit 1501, wherein the radio frequency switch unit 1501 may be any embodiment of a radio frequency switch unit as described above. One radio frequency switch unit 1501 may be used alone, or a plurality of radio frequency switch units 1501 may be used in combination. In an example, integrated circuit chip 1500 may include one or more radio frequency switch units 1501.

An integrated circuit chip comprising an embodiment of the radio frequency switch unit of the present application may be used in an electronic device. As shown in fig. 16, the electronic device 1600 includes an integrated circuit chip 1500 as shown in fig. 15. The electronic device 1600 may be a wireless device or any other electronic device that may use a radio frequency switching unit.

The wireless device may be a User Equipment (UE), mobile station, terminal, access terminal, subscriber unit, base station, or the like. The wireless device may also be a cellular telephone, a smart phone, a tablet computer, a wireless modem, a Personal Digital Assistant (PDA), a handheld device, a laptop computer, a smart book, a netbook, a cordless telephone, a Wireless Local Loop (WLL) station, a bluetooth device, etc. The wireless device may be capable of communicating with a wireless communication system, may be capable of receiving signals from a broadcast station, signals from one or more satellites, and the like. A wireless device may support one or more wireless communication technologies (e.g., 5G, LTE, CDMA2000, WCDMA, TD-SCDMA, GSM, 802.11, millimeter waves, etc.).

Those of skill in the art would understand that information and signals may be represented and processed using any of a variety of different technologies and techniques. For example, data, instructions, commands, information, signals, bits, symbols, and chips that may be referenced throughout the above description may be represented by voltages, currents, electromagnetic waves, magnetic fields or particles, optical fields or particles, or any combination thereof. It should also be noted that the types and techniques of transistors may be replaced, rearranged or otherwise modified to achieve the same results. For example, a circuit shown as utilizing PMOS transistors may be modified to use NMOS transistors, and vice versa. Thus, the amplifiers disclosed herein may be implemented using a variety of transistor types and technologies, and are not limited to those shown in the figures. For example, a transistor type such as BJT, gaAs, MOSFET or any other transistor technology may be used.

It should be noted that in this document, relational terms such as "first" and "second" and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions.

Throughout the specification and claims, unless the context requires otherwise, the words "comprise", "comprising", and the like will be construed in a generic and descriptive sense and not for purposes of exclusivity or exhaustion; that is, it is meant to "include, but not limited to. Conditional language, such as "may," "for example," and the like, as used herein is generally intended to mean that some embodiments include, but not other embodiments include, some features, elements, and/or states unless expressly specified otherwise or otherwise dependent upon the context in which they are used. Furthermore, the words "herein," "above," "below," and words of similar importance, when used in this disclosure, shall refer to the entire disclosure, rather than any particular portion of the disclosure. Where the context allows, words in the singular or plural form may also be used in the above detailed description to include the plural or singular, respectively.

It is to be understood that the application is not limited to the precise arrangements and instrumentalities shown in the drawings, which have been described above, and that various modifications and changes may be effected without departing from the scope thereof. The scope of the application is limited only by the appended claims.

Claims

1. A radio frequency switching unit comprising a first inductor pair, a first switching module, a second switching module and a first snubber circuit, wherein:

2. The radio frequency switching unit according to claim 1, wherein the channel between the first node and the second node is off when the first and second switching modules are turned on under the control of the control signal, and wherein the channel between the first and second nodes is on when the first and second switching modules are turned off under the control of the control signal.

3. The radio frequency switching unit of claim 1, further comprising an isolation enhancement module, wherein a first end of the first inductor is connected to the first node through the isolation enhancement module, the isolation enhancement module comprising K first isolation enhancement modules, M second isolation enhancement modules, and N third isolation enhancement modules in series, wherein K, M and N are each integers greater than or equal to 0 and K, M and N are not equal to 0 simultaneously, a first end of a first one of the K first isolation enhancement modules, M second isolation enhancement modules, and N third isolation enhancement modules in series is connected to the first node, a second end of a last one is connected to the first end of the first inductor, and a second end of each other is connected to a first end of a next one, wherein:

The first isolation enhancement module includes: the second inductor pair comprises a third inductor and a fourth inductor, the first end of the third inductor is used as the first end of the first isolation enhancement module, the second end of the third inductor is connected with the second end of the fourth inductor, the first end of the third switch module is connected to the second end of the third inductor and the second end of the fourth inductor, the second end of the third switch module is grounded, the first end of the fourth switch module is connected to the first end of the fourth inductor and is used as the second end of the first isolation enhancement module, the second end of the fourth switch module is grounded, and the third switch module and the fourth switch module are used for being conducted or turned off together with the first switch module and the second switch module under the control of the control signal;

the second isolation enhancement module includes: a third inductor pair and a fifth switch module, wherein the third inductor pair comprises a fifth inductor and a sixth inductor, a first end of the fifth inductor is used as a first end of the second isolation enhancement module, a second end of the fifth inductor is connected with a second end of the sixth inductor, a first end of the fifth switch module is connected to the second end of the fifth inductor and the second end of the sixth inductor, a second end of the fifth switch module is grounded, a first end of the sixth inductor is used as a second end of the second isolation enhancement module, and the fifth switch module is used for being turned on or off together with the first switch module and the second switch module under the control of the control signal; and

The third isolation enhancement module includes: a seventh inductor and a sixth switch module, wherein the first end of the seventh inductor is used as the first end of the third isolation enhancement module, the second end of the seventh inductor is connected to the first end of the sixth switch module, the second end of the sixth switch module is grounded, the first end of the sixth switch module is used as the second end of the third isolation enhancement module, and the sixth switch module is used for being turned on or turned off together with the first switch module and the second switch module under the control of the control signal.

4. A radio frequency switching unit according to claim 3, characterized in that:

at least one of the third inductance, the fourth inductance, the third switching module, and the fourth switching module of at least one of the K first isolation enhancement modules has different parameters than the other first isolation enhancement modules;

at least one of the fifth inductance, the sixth inductance, and the fifth switching module of at least one of the M second isolation enhancement modules has different parameters than the other second isolation enhancement modules;

at least one of the seventh inductance and the sixth switching module of at least one of the N third isolation enhancement modules has different parameters than the other third isolation enhancement modules.

5. The radio frequency switching unit of claim 1, wherein the first or second switching module comprises a transistor switching device having a first end as the first end of the first switching module and a second end as the second end of the first switching module.

6. A radio frequency switching unit according to claim 3, characterized in that the third, fourth, fifth or sixth switching module comprises a transistor switching device, the first end of which is the first end of the third, fourth, fifth or sixth switching module and the second end of which is the second end of the first switching module.

7. The radio frequency switching unit of claim 5 or 6, wherein the first, second, third, fourth, fifth or sixth switching module further comprises an ac suppressing device, a first end of the ac suppressing device being connected to the control signal, a second end of the ac suppressing device being connected to a control end of the transistor switching device.

8. The radio frequency switching unit of claim 7, wherein the ac suppression device is a resistor and the transistor switching device is a transistor.

9. The radio frequency switching unit of claim 7, wherein the ac suppression device is an inductor and the transistor switching device is a transistor.

10. The radio frequency switching unit of claim 7, wherein the ac suppressing device is a resistor, the transistor switching device is a transistor, the first or second switching module further comprises an inductor, wherein a first end of the resistor is connected to the first or second control signal, a second end of the resistor is connected to a control end of the transistor, and two ends of the inductor are connected to the first and second ends of the transistor, respectively.

11. The radio frequency switching unit of claim 7, wherein the ac suppressing device is a resistive voltage divider network, the transistor switching device comprises a transistor array of a plurality of transistors arranged in m columns and n rows, where m is an integer greater than or equal to 1 and n is an integer greater than 1, the control terminal of each of the transistors of the n rows being connected to the resistive voltage divider network, the second terminal of the transistor of the first of the n rows being connected to the second terminal of the first or second switching module, the first terminal of the transistor of the last of the n rows being connected to the first terminal of the first or second switching module, the two ends of each of the transistors of the m columns being connected in series in sequence, the resistive voltage divider network being operable to provide the first or second control signal, respectively, to the transistors of each of the n rows.

12. A radio frequency switching unit according to claim 3, wherein the first, second, third, fourth, fifth or sixth switching module comprises: a transistor, a first ac containment device, a second ac containment device, a third ac containment device, a first capacitance, a second capacitance, wherein:

a first end of the first alternating current containment device is used as a first control signal end, and a second end of the first alternating current containment device is connected to a control end of the transistor;

one end of the first capacitor is connected with the first end of the transistor, the other end of the first capacitor is used as the first end of the first or second switch module, one end of the second alternating current containment device is connected between the first end of the transistor and the first capacitor, and the other end of the second alternating current containment device is used as a second control signal end;

one end of the second capacitor is connected with the second end of the transistor, the other end of the second capacitor is used as the second end of the first or second switch module, one end of the third alternating current containment device is connected between the second end of the transistor and the second capacitor, and the other end of the third alternating current containment device is connected to a second control signal end;

One of the first control signal end and the second control signal end is connected with the control signal, and the other is connected with a reference level.

13. The radio frequency switching unit according to any of claims 1-6, characterized in that the first inductance and the second inductance are both spiral inductances and are arranged in opposite spiral directions in the radio frequency switching unit.

14. The radio frequency switching unit according to any of claims 1-6, wherein the first inductance and the second inductance are arranged as mirror images of each other in the radio frequency switching unit.

15. The radio frequency switching unit according to any one of claims 1-6, wherein the first inductor is formed by a first microstrip line and the first microstrip line is wound in a first spiral pattern, the second inductor is formed by a second microstrip line and the second microstrip line is wound in a second spiral pattern, wherein a first end and a second end of the first microstrip line are respectively a first end and a second end of the first inductor, respectively a first end and a second end of the second microstrip line are respectively a first end and a second end of the second inductor, and the second ends of the first microstrip line and the second microstrip line are connected together such that the first microstrip line and the second microstrip line form a combined microstrip line.

16. The radio frequency switching unit according to claim 15, wherein the first and second spiral patterns do not overlap and are adjacent but at a distance in a direction parallel to a wiring layer of the radio frequency switching unit.

17. The radio frequency switching unit according to claim 15, wherein the merged microstrip line is composed of multiple layers of metallic material, wherein each layer of metallic material is located in a different wiring layer of the radio frequency switching unit.

18. The radio frequency switching unit according to claim 15, wherein the merged microstrip line is composed of a single layer of metal material, wherein the single layer of metal material is located in the same or different wiring layers of the radio frequency switching unit.

19. A radio frequency switching circuit comprising a plurality of radio frequency switching units as claimed in any one of claims 1 to 18, wherein:

20. The radio frequency switching circuit of claim 19, wherein the respective control signals of the plurality of radio frequency switching units are configured such that only one of the plurality of radio frequency switching units is turned on at a time.

21. The radio frequency switching circuit according to claim 19 or 20, further comprising a capacitor, one end of the capacitor being connected to the common node, the other end of the capacitor being grounded.

22. An integrated circuit chip comprising a radio frequency switching unit according to any one of claims 1-18.

23. An electronic device comprising the integrated circuit chip of claim 22.