CN116899914B - EML laser screening method - Google Patents
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- CN116899914B CN116899914B CN202311181228.0A CN202311181228A CN116899914B CN 116899914 B CN116899914 B CN 116899914B CN 202311181228 A CN202311181228 A CN 202311181228A CN 116899914 B CN116899914 B CN 116899914B
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- 238000000034 method Methods 0.000 title claims abstract description 23
- 238000012216 screening Methods 0.000 title claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 claims abstract description 32
- 230000008033 biological extinction Effects 0.000 claims abstract description 8
- 230000002950 deficient Effects 0.000 claims abstract description 4
- 230000003287 optical effect Effects 0.000 claims description 20
- 238000012360 testing method Methods 0.000 abstract description 4
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000013441 quality evaluation Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B07—SEPARATING SOLIDS FROM SOLIDS; SORTING
- B07C—POSTAL SORTING; SORTING INDIVIDUAL ARTICLES, OR BULK MATERIAL FIT TO BE SORTED PIECE-MEAL, e.g. BY PICKING
- B07C5/00—Sorting according to a characteristic or feature of the articles or material being sorted, e.g. by control effected by devices which detect or measure such characteristic or feature; Sorting by manually actuated devices, e.g. switches
- B07C5/34—Sorting according to other particular properties
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Abstract
The invention discloses a screening method of an EML laser, which comprises the following steps: step 1, determining the maximum alternating voltage Vmod max input to an EML laser according to an adopted EML laser driving chip, and setting a VEA initial value; step 2, setting the temperatures of direct current Ibias and TEC of the EML laser as target parameters required by production; step 3, generating and scanning a curve corresponding to the output light power and the VEA value of the EML laser, and finding out the maximum ER value and the corresponding VEA value under the input of the maximum alternating voltage Vmod max; step 4, if the maximum ER value meets the index requirement of production, the EML laser judges that the product is good, and the corresponding VEA value is taken as the optimal value of the subsequent process; and if the maximum ER value is smaller than the index requirement of production, judging the EML laser device as a defective product. According to the invention, a module test is not needed, devices with the extinction ratio ER not reaching the standard can be screened out at the device level, and meanwhile, the optimal reverse bias voltage VEA value is found for the subsequent production process, so that the production efficiency and the yield are improved.
Description
Technical Field
The invention relates to the technical field of quality evaluation of EML lasers, in particular to a screening method of an EML laser.
Background
In high-speed optical communication systems, lasers are used to convert electrical signals into optical signals and are an important component in optical transceiver modules. Commonly used lasers are VCSELs (vertical cavity surface emitting lasers), DFBs (distributed feedback lasers) and EMLs (electro absorption modulated lasers). Compared with other types of lasers, the EML laser belongs to one of external modulation lasers, the EML packages an electroabsorption modulator (EAM) and a DFB laser together, components such as an optical isolator, a backlight monitor, a TEC refrigerating sheet and a thermistor are integrated inside the EML, the problem of dispersion chirp is not easy to generate, the signal transmission quality is high, and the EML laser is widely applied to high-speed long-distance transmission application. To ensure the eye quality of the transmitted signal, the ER (extinction ratio) of the EML laser output signal eye is generally high, typically greater than 10dB, while the reverse bias voltage VEA and ac drive voltage Vmod of the EML laser affect the maximum ER value that can be achieved.
In the related art, a fixed VEA is usually used to set the EML laser in production, and the VEA is a recommended value or an empirical value of the EML manufacturer, but since the electrical absorption performance of each EML is not exactly the same in mass production, the VEA is not the optimal value, and the production yield of the optical transceiver module is reduced. In addition, since the EML laser uses the EML laser driving chip to provide the ac driving voltage Vmod, the EML laser driving chip needs to be matched with the EML laser on the optical transceiver module, and the maximum ac driving voltage provided by the EML laser driving chip is limited, so that the situation that Vmod is adjusted to the maximum value and cannot reach the target ER value can occur, and the production yield of the optical transceiver module can be affected. Therefore, it is necessary to detect the production yield of the optical transceiver module and discover the defects early, but in the conventional production process, the defects can be discovered only when the EML eye pattern is tested in the production stage of the optical transceiver module, which is relatively delayed, wastes production resources and affects the production efficiency.
Disclosure of Invention
The invention aims to provide an EML laser screening method, which solves the problems in the prior art, can screen devices with a extinction ratio ER which does not reach the standard at a device level without passing module test, and simultaneously finds an optimal reverse bias voltage VEA value for the subsequent production process, thereby greatly improving the production efficiency and yield of module production.
In order to achieve the above object, the solution of the present invention is:
an EML laser screening method comprising the steps of:
step 1, determining the maximum alternating voltage Vmod max input to an EML laser according to an adopted EML laser driving chip, and setting a VEA initial value;
step 2, setting the temperatures of direct current Ibias and TEC of the EML laser as target parameters required by production;
step 3, generating and scanning a curve corresponding to the output light power and the VEA value of the EML laser, and finding out the maximum ER value and the corresponding VEA value under the input of the maximum alternating voltage Vmod max;
step 4, if the maximum ER value meets the production index requirement, the EML laser is judged to be good, the subsequent process is carried out, and the corresponding VEA value is used as the optimal value of the subsequent process; and if the maximum ER value is smaller than the production index requirement, judging the EML laser device as a defective product.
Preferably, the step 3 includes the steps of:
step 3.1, setting the current VEA value as V n Setting the reverse bias voltage of the EML laser to V n +Vmod max/2, recording the output optical power Pout1, wherein n is a serial number;
step 3.2, reversing the EML laserThe forward bias voltage is set to V n -Vmodmax/2, recording the output optical power Pout2;
step 3.3, calculating V n Corresponding extinction ratio ER n (dB) =pout1-pout2, and V is recorded n And ER n (dB)；
Step 3.4, judging V n If the minimum value is reached, the step 3.5 is carried out if the result is no, and the step 3.6 is carried out if the result is yes;
step 3.5, V n+1 =V n -a, and V 1 The VEA initial value set in the step 1 is a preset stepping value; returning to the step 3.1;
step 3.6, outputting ER recorded in step 3.3 n Maximum value of (dB) and corresponding V n 。
Preferably, in the step 1, the VEA initial value is set to-Vmod max/2.
After the technical scheme is adopted, the invention has the following technical effects:
(1) the maximum ER value and the corresponding VEA value under the input of the maximum alternating voltage Vmod max can be found out by scanning the curve corresponding to the output optical power of the EML and the VEA value, the maximum ER value can be used for screening EML lasers, unqualified lasers with the maximum ER value smaller than the production index requirement are screened out, and the yield of subsequent procedures is improved, so that the purpose of screening unqualified devices at the device level without module test is achieved;
(2) the VEA value obtained in the screening step can be used as an optimal reverse bias voltage VEA value to be provided for the subsequent production process, so that the production efficiency and yield of the subsequent process are improved.
Drawings
FIG. 1 is a schematic diagram of a general flow chart of an embodiment of the present invention;
FIG. 2 is a schematic flow chart illustrating a sub-process according to an embodiment of the present invention;
fig. 3 is a graph of EML output optical power and VEA values according to an embodiment of the invention.
Detailed Description
In order to further explain the technical scheme of the invention, the invention is explained in detail by specific examples.
Referring to fig. 1 to 3, the invention discloses a screening method of an EML laser, which comprises the following steps:
step 1, determining the maximum alternating voltage Vmod max input to the EML laser by the EML laser driving chip through the blocking capacitor according to the adopted EML laser driving chip, and setting a VEA initial value. For example, after the maximum alternating voltage Vmodmax is determined, the VEA initial value may be set to-Vmodmax/2, so that the initial value of the output optical power Pout1 is 0 when the negative pressure is calculated in the subsequent step.
And 2, setting the direct current Ibias and TEC temperatures of the EML laser as target parameters required by production. These target parameters do not need to be changed in the subsequent process.
Step 3, generating and scanning a curve corresponding to the output light power and the VEA value of the EML laser, and finding out the maximum ER value and the corresponding VEA value under the input of the maximum alternating voltage Vmod max;
step 4, if the maximum ER value meets the index requirement of production, judging that the EML laser device is good, entering a subsequent process, and taking the corresponding VEA value as the optimal value of the subsequent process; if the maximum ER value is less than the index requirement of production, the EML laser device is judged to be a defective product.
In a specific embodiment of the present invention, the step 3 includes the following steps:
step 3.1, setting the current VEA value as V n Setting the reverse bias voltage of the EML laser to V n +vmodmax/2, recording the output optical power Pout1, where n is a serial number. For example, referring to fig. 3, when the current VEA value is-0.6V, vmodmax to be 0.8V, the reverse bias voltage of the EML laser is set to-0.6+0.4= -0.2V, and the output optical power Pout1 is-4.5 dBm.
Step 3.2, setting the reverse bias voltage of the EML laser to V n Vmodmax/2, recording the output optical power Pout2. For example, referring to fig. 3, the reverse bias voltage of the EML laser is continuously set to-0.6-0.4= -1V, at which point the output optical power Pout2 is-14.9 dBm.
Step 3.3, calculating V n Corresponding extinction ratio ER n (dB) =pout1-pout2, and V is recorded n And ER n (dB). For example, referring to fig. 3, calculating extinction ratio er= -4.5- (-14.9) =10.4 dB, then recording current VEA as-0.6V and extinction ratio ER as 10.4dB.
Step 3.4, judging V n If the minimum value is reached, the step 3.5 is performed if the result is no, and the step 3.6 is performed if the result is yes. This minimum is determined by the efficiency of the EML laser used, e.g., the minimum may be-2V.
Step 3.5, V n+1 =V n -a, and V 1 The VEA initial value set in the step 1 is a preset stepping value; returning to the step 3.1. For example, a may take 0.1V, then the current VEA value is set to-0.6-0.1= -0.7V, and the cycle of 3.1 to 3.4 is repeated.
Step 3.6, outputting ER recorded in step 3.3 n Maximum value of (dB) (which is maximum ER value of EML laser) and corresponding V n 。
Through the scheme, the maximum ER value and the corresponding VEA value under the input of the maximum alternating voltage Vmod max can be found out by scanning the curve corresponding to the output light power of the EML and the VEA value, the maximum ER value can be used for screening EML lasers, unqualified lasers with the maximum ER value smaller than the production index requirement are screened out, the yield of the subsequent process is improved, and the purpose of screening out unqualified devices at the device level without module test is achieved; meanwhile, the VEA value obtained in the screening step can be used as an optimal reverse bias voltage VEA value to be provided for subsequent production processes, so that the production efficiency and yield of the subsequent processes are improved.
The above examples and drawings are not intended to limit the form or form of the present invention, and any suitable variations or modifications thereof by those skilled in the art should be construed as not departing from the scope of the present invention.
Claims (3)
1. An EML laser screening method is characterized by comprising the following steps:
step 1, determining the maximum alternating voltage Vmod max input to an EML laser according to an adopted EML laser driving chip, and setting a VEA initial value;
step 2, setting the temperatures of direct current Ibias and TEC of the EML laser as target parameters required by production;
step 3, generating and scanning a curve corresponding to the output light power and the VEA value of the EML laser, and finding out the maximum ER value and the corresponding VEA value under the input of the maximum alternating voltage Vmod max;
step 4, if the maximum ER value meets the production index requirement, the EML laser is judged to be good, the subsequent process is carried out, and the corresponding VEA value is used as the optimal value of the subsequent process; and if the maximum ER value is smaller than the production index requirement, judging the EML laser device as a defective product.
2. The EML laser screening method of claim 1, wherein the step 3 includes the steps of:
step 3.1, setting the current VEA value as V n Setting the reverse bias voltage of the EML laser to V n +Vmod max/2, recording the output optical power Pout1, wherein n is a serial number;
step 3.2, setting the reverse bias voltage of the EML laser to V n -Vmodmax/2, recording the output optical power Pout2;
step 3.3, calculating V n Corresponding extinction ratio ER n (dB) =pout1-pout2, and V is recorded n And ER n (dB)；
Step 3.4, judging V n If the minimum value is reached, the step 3.5 is carried out if the result is no, and the step 3.6 is carried out if the result is yes;
step 3.5, V n+1 =V n -a, and V 1 The VEA initial value set in the step 1 is a preset stepping value; returning to the step 3.1;
step 3.6, outputting ER recorded in step 3.3 n Maximum value of (dB) and corresponding V n 。
3. The EML laser screening method of claim 1, wherein:
in the step 1, the VEA initial value is set to-Vmod max/2.
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| 选择区域生长高质量InGaAsP多量子阱材料;刘国利, 王圩, 张佰君, 许国阳, 陈娓兮, 叶小玲, 张静媛, 汪孝杰, 朱洪亮;半导体学报(第05期);全文 * |
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