CN113406754A - Optical module and negative pressure value determination method - Google Patents

Optical module and negative pressure value determination method Download PDF

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Publication number
CN113406754A
CN113406754A CN202010179969.5A CN202010179969A CN113406754A CN 113406754 A CN113406754 A CN 113406754A CN 202010179969 A CN202010179969 A CN 202010179969A CN 113406754 A CN113406754 A CN 113406754A
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negative voltage
eml
mcu
value
loaded
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朱雁祥
刘澍
杨世海
石良
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Hisense Broadband Multimedia Technology Co Ltd
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Hisense Broadband Multimedia Technology Co Ltd
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4274—Electrical aspects
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/40—Transceivers

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  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Couplings Of Light Guides (AREA)

Abstract

The optical module and the negative pressure value determining method comprise a circuit board, an MCU arranged on the circuit board and an EML electrically connected with the MCU; the MCU stores a DA value of a loaded negative voltage corresponding to the maximum extinction ratio for EML debugging; the method for acquiring the loaded negative voltage DA value corresponding to the maximum extinction ratio comprises the following steps: the MCU loads negative voltage to the EML in a stepping mode to obtain the emitted light power of the EML under each negative voltage; calculating the corresponding extinction ratio under each negative voltage according to the obtained transmitting light power under each negative voltage, and determining the loaded negative voltage corresponding to the maximum extinction ratio according to the extinction ratio under each negative voltage; and searching the DA value of the negative voltage loaded corresponding to the maximum extinction ratio of the negative voltage value lookup table. The optical module and the negative pressure value determining method provided by the application realize that the optimal negative pressure value of the EML is determined through the lookup table during debugging of the optical module, and are convenient for debugging of optical power and ER characteristics.

Description

Optical module and negative pressure value determination method
Technical Field
The application relates to the technical field of optical fiber communication, in particular to an optical module and a negative pressure value determining method.
Background
The optical communication technology can be applied to novel services and application modes such as cloud computing, mobile internet, video and the like. In optical communication, an optical module is a tool for realizing the interconversion of optical signals and is one of the key devices in optical communication equipment. For the signal transmission of the optical module, VCSEL (Vertical Cavity Emitting Laser), EML (electro-absorption Modulated Laser) and other types of signal transmission modes can be adopted.
For the signal emission mode of the EML, the fixed EA negative pressure is usually adopted for EML emission debugging. However, in the process of debugging EML emission in a fixed EA negative pressure mode, the first pass yield of a product with relatively good emission consistency is higher, and the first pass yield of a product with relatively poor EA absorption consistency is lower, so that the production efficiency of the product is lower.
Disclosure of Invention
The embodiment of the application provides an optical module and a negative pressure value determining method, which ensure that an optimal negative pressure value is written in the optical module, and facilitate debugging of optical power and ER (extinction ratio) characteristics.
In a first aspect, an optical module provided in an embodiment of the present application includes:
a circuit board provided with a circuit;
the MCU is arranged on the circuit board;
the optical transceiver is electrically connected with the circuit board and is used for transmitting and receiving optical signals;
the optical transceiver comprises an EML, wherein the EML is electrically connected with the MCU and used for generating optical signals;
the MCU is stored with a DA value which is used for loading negative voltage corresponding to the maximum ER of the EML debugging;
the method for acquiring the DA value of the negative voltage loaded corresponding to the maximum ER comprises the following steps:
the MCU loads negative voltage to the EML in a stepping mode to obtain the power of loading the EML under each negative voltagePower P of emitted lightiWherein P isi∈{P1、P2…Pi…Pn-1、PnN is the number of times that the MCU loads negative voltage to the EML in a stepping mode;
according to the obtained emitted light power P under each negative voltageiAnd
Figure BDA0002412155820000011
calculating the corresponding extinction ratio ER under each negative voltage;
determining the loaded negative voltage corresponding to the maximum extinction ratio ER according to the extinction ratio ER under each negative voltage loading obtained through calculation;
and searching the DA value of the negative voltage loaded corresponding to the maximum ER according to a negative voltage value lookup table.
In a second aspect, the present application further provides a negative pressure value determining method, which is characterized in that the method is applied to an optical module, and the optical module is provided with an EML and an MCU electrically connected to the EML; the method comprises the following steps:
the method for acquiring the DA value of the negative voltage loaded corresponding to the maximum ER comprises the following steps:
the MCU loads negative voltage to the EML in a stepping mode to obtain the emitted light power P of the EML loaded with each negative voltageiWherein P isi∈{P1、P2…Pi…Pn-1、PnN is the number of times that the MCU loads negative voltage to the EML in a stepping mode;
according to the obtained emitted light power P under each negative voltageiAnd
Figure BDA0002412155820000021
calculating the corresponding extinction ratio ER under each negative voltage;
determining the loaded negative voltage corresponding to the maximum extinction ratio ER according to the extinction ratio ER under each negative voltage loading obtained through calculation;
and searching the DA value of the negative voltage loaded corresponding to the maximum ER according to a negative voltage value lookup table.
According to the optical module and the negative pressure value determining method, the MCU is controlled to load the negative voltage to the EML in a stepping mode and obtain the transmitting light power of the EML loaded with each negative voltage, the extinction ratio ER loaded with each negative voltage is calculated according to the transmitting light power of the EML loaded with each negative voltage, the negative voltage loaded corresponding to the maximum extinction ratio ER is determined, and the DA value of the negative voltage loaded corresponding to the maximum extinction ratio ER is obtained by searching the negative pressure value lookup table. Therefore, the optical module and the negative pressure value determining method provided by the embodiment of the application realize that the optimal negative pressure value of the EML is determined through the lookup table during the debugging of the optical module, so that the debugging of the optical power and the ER characteristic is facilitated, the production efficiency and the through rate of the optical module are further obviously improved, and even more, the production efficiency and the through rate can be improved by 5%.
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In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a schematic diagram of a connection relationship of an optical communication terminal;
FIG. 2 is a schematic diagram of an optical network unit;
fig. 3 is a schematic structural diagram of an optical module according to an embodiment of the present disclosure;
FIG. 4 is a schematic diagram of an exploded structure of an optical module according to an embodiment of the present application;
fig. 5 is a block diagram of an internal structure of an EML optical module according to an embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
One of the core links of optical fiber communication is the interconversion of optical and electrical signals. The optical fiber communication uses optical signals carrying information to transmit in information transmission equipment such as optical fibers/optical waveguides, and the information transmission with low cost and low loss can be realized by using the passive transmission characteristic of light in the optical fibers/optical waveguides; meanwhile, the information processing device such as a computer uses an electric signal, and in order to establish information connection between the information transmission device such as an optical fiber or an optical waveguide and the information processing device such as a computer, it is necessary to perform interconversion between the electric signal and the optical signal.
The optical module realizes the function of interconversion of optical signals and electrical signals in the technical field of optical fiber communication, and the interconversion of the optical signals and the electrical signals is the core function of the optical module. The optical module is electrically connected with an external upper computer through a golden finger on an internal circuit board of the optical module, and the main electrical connection comprises power supply, I2C signals, data signals, grounding and the like; the electrical connection mode realized by the gold finger has become the mainstream connection mode of the optical module industry, and on the basis of the mainstream connection mode, the definition of the pin on the gold finger forms various industry protocols/specifications.
Fig. 1 is a schematic diagram of connection relationship of an optical communication terminal. As shown in fig. 1, the connection of the optical communication terminal mainly includes the interconnection among the optical network terminal 100, the optical module 200, the optical fiber 101 and the network cable 103;
one end of the optical fiber 101 is connected with a far-end server, one end of the network cable 103 is connected with local information processing equipment, and the connection between the local information processing equipment and the far-end server is completed by the connection between the optical fiber 101 and the network cable 103; and the connection between the optical fiber 101 and the network cable 103 is made by the optical network terminal 100 having the optical module 200.
An optical port of the optical module 200 is externally accessed to the optical fiber 101, and establishes bidirectional optical signal connection with the optical fiber 101; an electrical port of the optical module 200 is externally connected to the optical network terminal 100, and establishes bidirectional electrical signal connection with the optical network terminal 100; the optical module realizes the interconversion of optical signals and electric signals, thereby realizing the establishment of information connection between the optical fiber and the optical network terminal; specifically, the optical signal from the optical fiber is converted into an electrical signal by the optical module and then input to the optical network terminal 100, and the electrical signal from the optical network terminal 100 is converted into an optical signal by the optical module and input to the optical fiber.
The optical network terminal is provided with an optical module interface 102, which is used for accessing an optical module 200 and establishing bidirectional electric signal connection with the optical module 200; the optical network terminal is provided with a network cable interface 104, which is used for accessing the network cable 103 and establishing bidirectional electric signal connection with the network cable 103; the optical module 200 is connected to the network cable 103 through the optical network terminal 100, specifically, the optical network terminal transmits a signal from the optical module to the network cable and transmits the signal from the network cable to the optical module, and the optical network terminal serves as an upper computer of the optical module to monitor the operation of the optical module.
At this point, a bidirectional signal transmission channel is established between the remote server and the local information processing device through the optical fiber, the optical module, the optical network terminal and the network cable.
Common information processing apparatuses include routers, switches, electronic computers, and the like; the optical network terminal is an upper computer of the optical module, provides data signals for the optical module, and receives the data signals from the optical module, and the common upper computer of the optical module also comprises an optical line terminal and the like.
Fig. 2 is a schematic diagram of an optical network terminal structure. As shown in fig. 2, the optical network terminal 100 has a circuit board 105, and a cage 106 is disposed on a surface of the circuit board 105; an electric connector is arranged in the cage 106 and used for connecting an electric port of an optical module such as a golden finger; the cage 106 is provided with a heat sink 107, and the heat sink 107 has a projection such as a fin that increases a heat radiation area.
The optical module 200 is inserted into the optical network terminal, specifically, the electrical port of the optical module is inserted into the electrical connector inside the cage 106, and the optical port of the optical module is connected to the optical fiber 101.
The cage 106 is positioned on the circuit board, and the electrical connector on the circuit board is wrapped in the cage, so that the electrical connector is arranged in the cage; the optical module is inserted into the cage, held by the cage, and the heat generated by the optical module is conducted to the cage 106 and then diffused by the heat sink 107 on the cage.
Fig. 3 is a schematic view of an optical module according to an embodiment of the present disclosure, and fig. 4 is a schematic view of an optical module according to an embodiment of the present disclosure. As shown in fig. 3 and 4, an optical module 200 according to an embodiment of the present invention includes an upper housing 201, a lower housing 202, an unlocking member 203, a circuit board 300, and an optical transceiver 400;
the upper shell 201 is covered on the lower shell 202 to form a wrapping cavity with two openings; the outer contour of the wrapping cavity is generally a square body, and specifically, the lower shell comprises a main plate and two side plates which are positioned at two sides of the main plate and are perpendicular to the main plate; the upper shell comprises a cover plate, and the cover plate covers two side plates of the upper shell to form a wrapping cavity; the upper shell can also comprise two side walls which are positioned at two sides of the cover plate and are perpendicular to the cover plate, and the two side walls are combined with the two side plates to realize that the upper shell covers the lower shell.
The two openings may be two ends (204, 205) in the same direction, or two openings in different directions; one opening is an electric port 204, and a gold finger of the circuit board extends out of the electric port 204 and is inserted into an upper computer such as an optical network terminal; the other opening is an optical port 205 for external optical fiber access to connect with the optical transceiver 400 inside the optical module; the photoelectric devices such as the circuit board 300 and the optical transceiver 400 are positioned in the packaging cavity.
The assembly mode of combining the upper shell and the lower shell is adopted, so that the circuit board 300, the optical transceiver 400 and other devices can be conveniently installed in the shells, and the upper shell and the lower shell form the outermost packaging protection shell of the optical module; the upper shell and the lower shell are made of metal materials generally, so that electromagnetic shielding and heat dissipation are facilitated; generally, the housing of the optical module is not made into an integrated component, so that when devices such as a circuit board and the like are assembled, the positioning component, the heat dissipation component and the electromagnetic shielding component cannot be installed, and the production automation is not facilitated.
The unlocking component 203 is located on the outer wall of the wrapping cavity/lower shell 202, and is used for realizing the fixed connection between the optical module and the upper computer or releasing the fixed connection between the optical module and the upper computer.
The unlocking component 203 is provided with a clamping component matched with the upper computer cage; the end of the unlocking component can be pulled to enable the unlocking component to move relatively on the surface of the outer wall; the optical module is inserted into a cage of the upper computer, and the optical module is fixed in the cage of the upper computer by a clamping component of the unlocking component; by pulling the unlocking component, the clamping component of the unlocking component moves along with the unlocking component, so that the connection relation between the clamping component and the upper computer is changed, the clamping relation between the optical module and the upper computer is released, and the optical module can be drawn out from the cage of the upper computer.
The circuit board 300 is provided with circuit traces, electronic components (such as capacitors, resistors, triodes, and MOS transistors), and chips (such as the MCU301, the laser driver chip, the amplitude limiting amplifier chip, the clock data recovery CDR, the power management chip, and the data processing chip DSP).
The circuit board connects the electrical appliances in the optical module together according to the circuit design through circuit wiring to realize the functions of power supply, electrical signal transmission, grounding and the like.
The circuit board is generally a hard circuit board, and the hard circuit board can also realize a bearing effect due to the relatively hard material of the hard circuit board, for example, the hard circuit board can stably bear a chip; when the optical transceiver is positioned on the circuit board, the rigid circuit board can also provide stable bearing; the hard circuit board can also be inserted into an electric connector in the upper computer cage, and specifically, a metal pin/golden finger is formed on the surface of the tail end of one side of the hard circuit board and is used for being connected with the electric connector; these are not easily implemented with flexible circuit boards.
A flexible circuit board is also used in a part of the optical module to supplement a rigid circuit board; the flexible circuit board is generally used in combination with a rigid circuit board, for example, the rigid circuit board may be connected to the optical transceiver device through the flexible circuit board.
The optical transceiver 400 includes two parts, namely an optical transmitter and an optical receiver, for transmitting and receiving optical signals, respectively. The light emitting component and the light receiving component provided by the embodiment of the application are combined together to form a light receiving and transmitting integrated component.
In the embodiment of the present application, the light emitting module 400 includes an EML therein, and the EML is used to generate an optical signal. Fig. 5 is a block diagram of an internal structure of an optical module according to an embodiment of the present application. As shown in fig. 5, the EML includes a Laser Diode (LD), an Electro Absorption Modulator (EAM), and a Thermoelectric Cooler (TEC) disposed therein. When the EML works, the MCU loads a negative voltage through the EAM. In order to realize that the MCU loads an optimal negative pressure value to the EAM, the embodiment of the application provides a negative pressure value determining method.
The negative pressure value determining method provided by the embodiment of the application comprises the following steps:
the method for acquiring the DA value of the negative voltage loaded corresponding to the maximum ER comprises the following steps:
the MCU loads negative voltage to the EML in a stepping mode to obtain the emitted light power P of the EML loaded with each negative voltageiWherein P isi∈{P1、P2…Pi…Pn-1、PnN is the number of times that the MCU loads negative voltage to the EML in a stepping mode;
according to the obtained emitted light power P under each negative voltageiAnd
Figure BDA0002412155820000041
calculating the corresponding extinction ratio ER under each negative voltage;
determining the loaded negative voltage corresponding to the maximum extinction ratio ER according to the extinction ratio ER under each negative voltage loading obtained through calculation;
and searching the DA value of the negative voltage loaded corresponding to the maximum ER according to a negative voltage value lookup table.
The method for determining the negative pressure value provided by the embodiment of the present application is described in detail below with reference to specific examples.
A fixed Bias current is applied to the EML and the temperature of the TEC (Thermoelectric Cooler) is controlled, and the MCU applies a negative voltage to the EAM through the EA pin. For example, a Bias current of 110ml is applied to the EML and the TEC is controlled to a temperature of 45 ℃.
The MCU loads an initial negative voltage to the EML through the EA pin, and obtains the transmitting optical power of the EML under the voltage, which is marked as P1. The negative voltage applied to the EML is adjusted by the same step negative voltage, and the emitted light power of the EML applied with the corresponding negative voltage is obtained.
Usually, the negative voltage range is-2.5V-0V, the initial negative voltage applied to the EML by the MCU through the EA pin may be 0V, and the negative voltage applied to the EML by the MCU through the EA pin is adjusted by the Δ V step negative voltage to obtain the emitted light power of the EML with the corresponding negative voltage applied, and calculate the corresponding ER according to the ER formula, as follows:
Figure BDA0002412155820000051
and determining the maximum ER according to the calculation result, and then obtaining the optimal negative pressure value according to the maximum ER. Optionally, according to-V1、-V2…-Vi…-VnCorresponding ER1、ER2…ERi…ERnAnd drawing an absorption curve corresponding to the EML, wherein the ER value is maximum when the absorption characteristic of the EA material is optimal, and the optimal negative pressure value is obtained according to the maximum ER value.
Optionally, in the embodiment of the present application, n may be 2mAnd m is the effective digit of the DAC in the MCU.
And searching the DA value of the loaded negative voltage corresponding to the maximum ER according to the negative voltage value lookup table. In the embodiment of the application, the MCU applies a negative voltage to the DA pin of the EML through the DAC pin thereon, so that the maximum ER value corresponding to the DA value loaded with the negative voltage needs to be searched through the negative voltage value lookup table, and then the DA value is written into the MCU, thereby facilitating the fastest module debugging.
Assuming that the number of active bits of the DAC of the MCU is m, the voltage that varies for each DA is:
Figure BDA0002412155820000052
the voltage corresponding to the DA value n is:
Figure BDA0002412155820000053
wherein, VoutThe MCU is loaded with the maximum negative voltage to the EML.
Further, a negative pressure value lookup table can be obtained:
DA is 1
Figure BDA0002412155820000054
DA is 2
Figure BDA0002412155820000055
...
DA is a
Figure BDA0002412155820000056
...
DA is 2m
Figure BDA0002412155820000061
when-Va is determined, the negative pressure value lookup table is used for obtaining
Figure BDA0002412155820000062
And then pass through
Figure BDA0002412155820000063
Obtaining the corresponding a, namely obtaining the DA value corresponding to-Va. Similarly, according to the loaded negative voltage corresponding to the obtained maximum extinction ratio ER, the DA value of the negative voltage corresponding to the maximum extinction ratio ER can be obtained by searching the negative voltage value lookup table, and then the DA value corresponding to the optimal negative voltage value is obtained. And writing the value into a register of the MCU after the DA value of the negative voltage corresponding to the maximum ER is obtained.
The embodiment of the application provides a negative pressure value determining method, which includes the steps of loading a negative voltage to an EML in a stepping mode by controlling an MCU, obtaining emission light power of the EML loaded with each negative voltage, calculating extinction ratio ER loaded with each negative voltage according to the emission light power of the EML loaded with each negative voltage, determining the negative voltage loaded corresponding to the maximum extinction ratio ER, and searching a negative pressure value lookup table to obtain a DA value of the negative voltage loaded corresponding to the maximum extinction ratio ER. Therefore, the method for determining the negative pressure value provided by the embodiment of the application realizes that the optimal negative pressure value of the EML is determined through the lookup table during the debugging of the optical module, the debugging of the optical power and the ER characteristic is facilitated, and the production efficiency and the through rate of the optical module are further improved.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.

Claims (10)

1. A light module, comprising:
a circuit board provided with a circuit;
the MCU is arranged on the circuit board;
the optical transceiver is electrically connected with the circuit board and is used for transmitting and receiving optical signals;
the optical transceiver comprises an EML, wherein the EML is electrically connected with the MCU and used for generating optical signals;
the MCU is stored with a DA value which is used for loading negative voltage corresponding to the maximum ER of the EML debugging;
the method for acquiring the DA value of the negative voltage loaded corresponding to the maximum ER comprises the following steps:
the MCU loads negative voltage to the EML in a stepping mode to obtain the emitted light power P of the EML loaded with each negative voltageiWherein P isi∈{P1、P2…Pi…Pn-1、PnN is the number of times that the MCU loads negative voltage to the EML in a stepping mode;
according to the obtained emitted light power P under each negative voltageiAnd
Figure FDA0002412155810000011
calculating the corresponding extinction ratio ER under each negative voltage;
determining the loaded negative voltage corresponding to the maximum extinction ratio ER according to the extinction ratio ER under each negative voltage loading obtained through calculation;
and searching the DA value of the negative voltage loaded corresponding to the maximum ER according to a negative voltage value lookup table.
2. The optical module of claim 1, wherein looking up the DA value of the maximum ER corresponding to the negative voltage applied according to a negative voltage value look-up table comprises:
establishing a negative pressure value lookup table according to the negative voltage which can be loaded to the EML by the MCU;
and searching the negative pressure value, determining a DA value loaded with a negative voltage corresponding to the maximum ER, and writing the DA value into a register of the MCU.
3. The optical module of claim 2, wherein the creating of the negative voltage value lookup table according to the negative voltage that the MCU can apply to the EML comprises:
if the DAC pin of the MCU is m bits, the voltage changed by each DA is
Figure FDA0002412155810000012
VoutRecording the maximum negative pressure of the EML for the MCU;
according to
Figure FDA0002412155810000013
And acquiring a negative pressure value corresponding to each DA value, and establishing a negative pressure value lookup table.
4. The optical module according to claim 1, wherein determining the loaded negative voltage corresponding to the maximum extinction ratio ER according to the calculated extinction ratio ER under each negative voltage loading comprises:
drawing an EML absorption curve according to the extinction ratio ER under each negative voltage;
and determining the maximum extinction ratio ER according to the EML absorption curve, and topping the corresponding loaded voltage according to the maximum extinction ratio ER.
5. The optical module of claim 1, wherein the MCU steps the EML in a negative voltage to the EML in steps of
Figure FDA0002412155810000014
6. The method for determining the negative pressure value is applied to an optical module, wherein the optical module is provided with an optical transceiver and an MCU (microprogrammed control unit), the optical transceiver comprises an EML (empirical mode language), and the EML is electrically connected with the MCU; the method comprises the following steps:
the method for acquiring the DA value of the negative voltage loaded corresponding to the maximum ER comprises the following steps:
the MCU loads negative voltage to the EML in a stepping mode to obtain the emitted light power P of the EML loaded with each negative voltageiWherein P isi∈{P1、P2…Pi…Pn-1、PnN is the number of times that the MCU loads negative voltage to the EML in a stepping mode;
according to the obtained emitted light power P under each negative voltageiAnd
Figure FDA0002412155810000021
calculating the corresponding extinction ratio ER under each negative voltage;
determining the loaded negative voltage corresponding to the maximum extinction ratio ER according to the extinction ratio ER under each negative voltage loading obtained through calculation;
and searching the DA value of the negative voltage loaded corresponding to the maximum ER according to a negative voltage value lookup table.
7. The negative pressure value determination method according to claim 6, wherein looking up the DA value of the maximum ER corresponding to the negative voltage loading according to a negative pressure value lookup table comprises:
establishing a negative pressure value lookup table according to the negative voltage which can be loaded to the EML by the MCU;
and searching the negative pressure value, determining a DA value loaded with a negative voltage corresponding to the maximum ER, and writing the DA value into a register of the MCU.
8. The negative pressure value determination method of claim 7, wherein establishing a negative pressure value lookup table according to which the MCU can apply a negative voltage to the EML comprises:
if the DAC pin of the MCU is m bits, the voltage changed by each DA is
Figure FDA0002412155810000022
VoutRecording the maximum negative pressure of the EML for the MCU;
according to
Figure FDA0002412155810000023
And acquiring a negative pressure value corresponding to each DA value, and establishing a negative pressure value lookup table.
9. The method for determining the negative pressure value according to claim 6, wherein the step of determining the negative voltage loaded corresponding to the maximum extinction ratio ER according to the calculated extinction ratio ER under each negative voltage loading comprises the following steps:
drawing an EML absorption curve according to the extinction ratio ER under each negative voltage;
and determining the maximum extinction ratio ER according to the EML absorption curve, and topping the corresponding loaded voltage according to the maximum extinction ratio ER.
10. The negative pressure value determining method of claim 6, wherein the MCU steps the EML with a negative voltage in a stepwise manner
Figure FDA0002412155810000024
CN202010179969.5A 2020-03-16 2020-03-16 Optical module and negative pressure value determination method Pending CN113406754A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116899914A (en) * 2023-09-14 2023-10-20 厦门优迅高速芯片有限公司 EML laser screening method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116899914A (en) * 2023-09-14 2023-10-20 厦门优迅高速芯片有限公司 EML laser screening method
CN116899914B (en) * 2023-09-14 2024-01-23 厦门优迅高速芯片有限公司 EML laser screening method

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