CN116868333A - 导热性片和电子设备 - Google Patents
导热性片和电子设备 Download PDFInfo
- Publication number
- CN116868333A CN116868333A CN202280014538.0A CN202280014538A CN116868333A CN 116868333 A CN116868333 A CN 116868333A CN 202280014538 A CN202280014538 A CN 202280014538A CN 116868333 A CN116868333 A CN 116868333A
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- Prior art keywords
- thermally conductive
- conductive sheet
- sheet
- heat
- filler
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- 239000011231 conductive filler Substances 0.000 claims abstract description 45
- 239000011230 binding agent Substances 0.000 claims abstract description 7
- 230000015556 catabolic process Effects 0.000 claims abstract description 5
- 229920000049 Carbon (fiber) Polymers 0.000 claims description 36
- 239000004917 carbon fiber Substances 0.000 claims description 36
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 16
- 229920001296 polysiloxane Polymers 0.000 claims description 15
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 12
- 229910052582 BN Inorganic materials 0.000 claims description 11
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 11
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 claims description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 6
- 239000012212 insulator Substances 0.000 claims description 5
- 239000011787 zinc oxide Substances 0.000 claims description 4
- 238000009413 insulation Methods 0.000 abstract description 6
- 239000011256 inorganic filler Substances 0.000 description 23
- 229910003475 inorganic filler Inorganic materials 0.000 description 23
- 238000000034 method Methods 0.000 description 22
- 229920000642 polymer Polymers 0.000 description 22
- 239000000843 powder Substances 0.000 description 22
- 239000011159 matrix material Substances 0.000 description 21
- 229910052751 metal Inorganic materials 0.000 description 21
- 239000002184 metal Substances 0.000 description 21
- 239000002245 particle Substances 0.000 description 21
- 229920005989 resin Polymers 0.000 description 18
- 239000011347 resin Substances 0.000 description 18
- 229920002050 silicone resin Polymers 0.000 description 16
- 239000011342 resin composition Substances 0.000 description 15
- 230000000052 comparative effect Effects 0.000 description 13
- 239000007788 liquid Substances 0.000 description 13
- 238000001723 curing Methods 0.000 description 12
- 239000000835 fiber Substances 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 11
- MYRTYDVEIRVNKP-UHFFFAOYSA-N 1,2-Divinylbenzene Chemical compound C=CC1=CC=CC=C1C=C MYRTYDVEIRVNKP-UHFFFAOYSA-N 0.000 description 10
- 238000003825 pressing Methods 0.000 description 10
- 230000005855 radiation Effects 0.000 description 10
- 229920001187 thermosetting polymer Polymers 0.000 description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 9
- 239000003795 chemical substances by application Substances 0.000 description 9
- 238000011049 filling Methods 0.000 description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 8
- 239000011247 coating layer Substances 0.000 description 8
- 239000006247 magnetic powder Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 239000007787 solid Substances 0.000 description 8
- 238000011282 treatment Methods 0.000 description 8
- 239000000945 filler Substances 0.000 description 7
- 230000017525 heat dissipation Effects 0.000 description 7
- -1 polyethylene Polymers 0.000 description 7
- 238000005520 cutting process Methods 0.000 description 6
- 238000001125 extrusion Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 238000003756 stirring Methods 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000007822 coupling agent Substances 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 239000002002 slurry Substances 0.000 description 5
- 238000007259 addition reaction Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 description 4
- 239000005020 polyethylene terephthalate Substances 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 239000004698 Polyethylene Substances 0.000 description 3
- 229910000808 amorphous metal alloy Inorganic materials 0.000 description 3
- 238000000889 atomisation Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 229920001971 elastomer Polymers 0.000 description 3
- 229920000573 polyethylene Polymers 0.000 description 3
- 239000005060 rubber Substances 0.000 description 3
- 238000000967 suction filtration Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 239000004634 thermosetting polymer Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229920000459 Nitrile rubber Polymers 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 239000005300 metallic glass Substances 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000003505 polymerization initiator Substances 0.000 description 2
- 229920001955 polyphenylene ether Polymers 0.000 description 2
- 230000035484 reaction time Effects 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 1
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 239000004709 Chlorinated polyethylene Substances 0.000 description 1
- 239000004641 Diallyl-phthalate Substances 0.000 description 1
- 229920000181 Ethylene propylene rubber Polymers 0.000 description 1
- 229910017061 Fe Co Inorganic materials 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 244000043261 Hevea brasiliensis Species 0.000 description 1
- 239000005062 Polybutadiene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229920002367 Polyisobutene Polymers 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910008423 Si—B Inorganic materials 0.000 description 1
- 229910001315 Tool steel Inorganic materials 0.000 description 1
- 229920006311 Urethane elastomer Polymers 0.000 description 1
- 229920000800 acrylic rubber Polymers 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 238000001241 arc-discharge method Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- QUDWYFHPNIMBFC-UHFFFAOYSA-N bis(prop-2-enyl) benzene-1,2-dicarboxylate Chemical compound C=CCOC(=O)C1=CC=CC=C1C(=O)OCC=C QUDWYFHPNIMBFC-UHFFFAOYSA-N 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229920005549 butyl rubber Polymers 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010908 decantation Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000002657 fibrous material Substances 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 229920001973 fluoroelastomer Polymers 0.000 description 1
- 229920005555 halobutyl Polymers 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 229920002681 hypalon Polymers 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229920003049 isoprene rubber Polymers 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000012764 mineral filler Substances 0.000 description 1
- 229920003052 natural elastomer Polymers 0.000 description 1
- 229920001194 natural rubber Polymers 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- 239000007882 oil-soluble azo polymerization initiator Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920003192 poly(bis maleimide) Polymers 0.000 description 1
- 229920001084 poly(chloroprene) Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 238000006277 sulfonation reaction Methods 0.000 description 1
- 239000006228 supernatant Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000013008 thixotropic agent Substances 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229920006305 unsaturated polyester Polymers 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 238000004073 vulcanization Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3737—Organic materials with or without a thermoconductive filler
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/28—Nitrogen-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/38—Boron-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K7/00—Use of ingredients characterised by shape
- C08K7/02—Fibres or whiskers
- C08K7/04—Fibres or whiskers inorganic
- C08K7/06—Elements
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L101/00—Compositions of unspecified macromolecular compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
- H01L2224/29291—The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29317—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/29318—Zinc [Zn] as principal constituent
-
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Abstract
本发明的导热性片是包含粘合剂和各向异性导热填料,且所述各向异性导热填料在厚度方向上取向的导热性片,该导热性片的任一面的Sa为5μm以下,Sz为50μm以下,绝缘击穿电压为0.5kV/mm以上。
Description
技术领域
本发明涉及导热性片和电子设备。
背景技术
伴随着电子设备的进一步高性能化,半导体元件的高密度化、高安装化不断发展。伴随于此,更高效地对从构成电子设备的电子部件发出的热进行散热变得重要。为了高效地散热,半导体经由导热性片安装于散热风扇、散热板等散热器上。作为导热性片,广泛使用在有机硅中分散含有无机填料等填充材料而成的导热性片。对于这样的散热构件,要求进一步提高热导率,通常,出于高导热性的目的,通过提高在基体内配合的无机填料的填充率来应对。
但是,若提高无机填料相对于导热性片的填充率,则导热性片的柔软性受损,或者由于无机填料的填充率高而发生掉粉,因此提高无机填料的填充率存在极限。作为无机填料,例如可列举出氧化铝、氮化铝、氢氧化铝等。另外,以导热性片的高热导率为目的,有时将氮化硼、石墨等鳞片状粒子、碳纤维等填充于基体内。这是基于鳞片状粒子等所具有的热导率的各向异性。
例如,在碳纤维的情况下,在纤维方向上具有约600~1200W/mK的热导率。已知在氮化硼的情况下,在面方向上具有约110W/mK左右的热导率,在与面方向垂直的方向上具有约2W/mK左右的热导率,从而具有各向异性。这样,使碳纤维、鳞片状粒子的面方向与作为热传递方向的片厚度方向相同。即,通过使碳纤维、鳞片状粒子在片的厚度方向上取向,能够飞跃性地提高导热性。
现有技术文献
专利文献
专利文献1:日本专利第6650175号公报
专利文献2:日本特开2012-23335号公报
专利文献3:日本专利第6082777号公报
发明内容
发明要解决的课题
然而,绝缘性的导热性片通过填充氧化铝等陶瓷填料来制造,但由于导热填料的导热性低,因此无法得到热阻小的导热性片。作为导热性高的陶瓷填料,可列举出氮化硼。氮化硼的形状为鳞片状,因此若不沿厚度方向取向,则无法得到高导热性。
因此,由导热性片形成用的树脂组合物制作成形体块,将该成形体块进行切片,从而能够使氮化硼在导热性片的厚度方向上取向。但是,这样仅通过简单地对成形体块进行切片来制作导热性片时,有时无法得到良好的热阻。另外,绝缘性填料的热导率比导电性填料差。
本发明是鉴于上述情况而完成的发明,其目的在于提供一种能够在厚度方向上良好地传热的导热性片和电子设备。
用于解决课题的方法
为了解决上述课题,实现目的,本发明的导热性片是包含粘合剂和各向异性导热填料、且上述各向异性导热填料在厚度方向上取向的导热性片,该导热性片的任一面的Sa为5μm以下,Sz为50μm以下,绝缘击穿电压为0.5kV/mm以上。
发明效果
根据本发明,发挥能够得到具有绝缘性且低热阻的导热性片这样的效果。
附图说明
[图1]图1是表示应用了本技术的导热片的一例的图。
[图2]图2是表示将导热性成形体进行切片的工序的一例的立体图。
[图3]图3是表示半导体装置的一例的图。
具体实施方式
以下,一边参照附图一边对本发明的实施方式进行详细说明。需要说明的是,本发明并不限定于以下说明的实施方式。另外,在附图的记载中,对相同或对应的要素适当赋予相同的符号。进一步,附图是示意性的,需注意的是各要素的尺寸关系等有时与现实不同。在附图相互之间有时也包含相互的尺寸关系、比率不同的部分。
(导热性片的构成例)
图1是表示应用了本技术的导热性片的一例的图。图1所示的导热性片1具有片主体2和树脂被覆层5。片主体2是将至少包含高分子基体成分和纤维状的导热性填充剂的粘合剂树脂固化而成的。树脂被覆层5由从片主体2渗出的高分子基体成分的未固化成分形成。在片主体2的一个面2a上粘贴有第一剥离膜3,在片主体2的另一个面2b上粘贴有第二剥离膜4。
导热性片1通过在一个面2a和另一个面2b上形成树脂被覆层5而具有粘性(粘着性),通过在使用时剥离第一剥离膜3和第二剥离膜4,从而能够将片主体2粘贴在预定的位置。由此,导热性片1的作业性、操作性优异。另外,导热性片1能够修正电子部件与散热构件的组装时的位置偏移、或能够在暂时组装后因某些情况而解体并再次组装等的再加工性优异。
(高分子基体成分)
构成片主体2的高分子基体成分是形成导热性片1的基材的高分子成分。关于其种类,没有特别限定,可以适当选择公知的高分子基体成分。例如,作为高分子基体成分之一,可列举出热固性聚合物。
作为上述热固性聚合物,例如可以列举交联橡胶、环氧树脂、聚酰亚胺树脂、双马来酰亚胺树脂、苯并环丁烯树脂、酚醛树脂、不饱和聚酯、邻苯二甲酸二烯丙酯树脂、有机硅树脂、聚氨酯、聚酰亚胺有机硅、热固型聚苯醚、热固型改性聚苯醚等。它们可以单独使用1种,也可以并用2种以上。
作为上述交联橡胶,例如可以列举天然橡胶、丁二烯橡胶、异戊二烯橡胶、丁腈橡胶、氢化丁腈橡胶、氯丁橡胶、乙丙橡胶、氯化聚乙烯、氯磺化聚乙烯、丁基橡胶、卤化丁基橡胶、氟橡胶、聚氨酯橡胶、丙烯酸橡胶、聚异丁烯橡胶、有机硅橡胶等。它们可以单独使用1种,也可以并用2种以上。
另外,这些热固性聚合物中,从成形加工性和耐候性优异、并且对电子部件的密合性和追随性的观点出发,优选使用有机硅树脂。作为上述有机硅树脂,没有特别限制,可以根据目的适当选择有机硅树脂的种类。
从得到上述成形加工性、耐候性、密合性等的观点出发,作为上述有机硅树脂,优选为由液态有机硅凝胶的主剂和固化剂构成的有机硅树脂。作为这样的有机硅树脂,例如可列举出加成反应型液态有机硅树脂、将过氧化物用于硫化的热硫化型混炼型的有机硅树脂等。其中,作为电子设备的散热构件,由于要求电子部件的发热面与散热器面的密合性,因此特别优选加成反应型液态有机硅树脂。
作为上述加成反应型液态有机硅树脂,优选使用以具有乙烯基的聚有机硅氧烷为主剂、以具有Si-H基的聚有机硅氧烷为固化剂的2液性的加成反应型有机硅树脂等。
在此,液态有机硅成分具有作为主剂的有机硅A液成分和包含固化剂的有机硅B液成分,有机硅A液成分和有机硅B液成分以预定的比例配合。有机硅A液成分与有机硅B液成分的配合比例可以适当调节,但优选设为能够对片主体2赋予柔软性,并且能够使高分子基体成分的未固化成分渗出到面2a与第一剥离膜3之间和面2b与第二剥离膜4之间而形成树脂被覆层5的配合比例。
另外,导热性片1中的上述高分子基体成分的含量没有特别限制,可以根据目的适当选择,从确保片的成形加工性、片的密合性等的观点出发,优选为15体积%~50体积%左右,更优选为20体积%~45体积%。
(纤维状导热性填充剂)
导热性片1中所含的纤维状的导热性填充剂是用于提高片的导热性的成分。关于导热性填充剂的种类,只要是导热性高的纤维状的材料就没有特别限定,从可得到更高的导热性的观点出发,优选使用碳纤维。
需要说明的是,关于导热性填充剂,可以单独使用一种,也可以混合使用两种以上。另外,在使用两种以上的导热性填充剂的情况下,可以均为纤维状的导热性填充剂,也可以将纤维状的导热性填充剂与其他形状的导热性填充剂混合使用。作为其他形状的导热性填充剂,可列举出银、铜、铝等金属、氧化铝、氮化铝、碳化硅、石墨等陶瓷等。
对上述碳纤维的种类没有特别限制,可以根据目的适当选择。例如,可以使用沥青系、PAN系、将PBO纤维石墨化而成的碳纤维、通过电弧放电法、激光蒸发法、CVD法(化学气相生长法)、CCVD法(催化剂化学气相生长法)等合成的物质。其中,从得到高导热性的观点出发,更优选将PBO纤维石墨化而成的碳纤维、沥青系碳纤维。
另外,上述碳纤维可以根据需要对其一部分或全部进行表面处理来使用。作为上述表面处理,例如可以列举氧化处理、氮化处理、硝化、磺化、或者在通过这些处理导入到表面的官能团或碳纤维的表面附着或结合金属、金属化合物、有机化合物等的处理等。作为上述官能团,例如可以列举羟基、羧基、羰基、硝基、氨基等。
另外,上述碳纤维可以用绝缘物被覆至少其表面的一部分。作为用于被覆的材料,可列举出SiO2等绝缘性的无机物、环氧树脂、(甲基)丙烯酸树脂、二乙烯基苯等热固性或紫外线固化性树脂。作为被覆的方法,例如,如果绝缘物为无机物,则可列举出利用溶胶凝胶法在碳纤维表面析出。在热固性树脂的情况下,可以列举在溶解有单体和聚合引发剂或固化剂的溶液中加入碳纤维,一边搅拌一边进行聚合反应,使不溶于溶剂的聚合物在碳纤维表面析出而进行被覆的方法等。在热固性树脂的情况下,优选使用2官能以上的单体。
进而,对于上述碳纤维的平均纤维长度(平均长轴长度),也没有特别限制,可以适当选择,从可靠地得到高导热性的观点出发,优选为50μm~300μm的范围,更优选为75μm~275μm的范围,特别优选为90μm~250μm的范围。
进一步另外,对于上述碳纤维的平均纤维直径(平均短轴长度),也没有特别限制,可以适当选择,但从可靠地得到高导热性的观点出发,优选为4μm~20μm的范围,更优选为5μm~14μm的范围。
关于上述碳纤维的纵横比(平均长轴长度/平均短轴长度),从可靠地得到高导热性的观点出发,优选为8以上,更优选为9~30。若上述纵横比小于8,则碳纤维的纤维长度(长轴长度)短,因此热导率有可能降低,另一方面,若超过30,则在导热片1中的分散性降低,因此有可能无法得到充分的热导率。
这里,上述碳纤维的平均长轴长度和平均短轴长度例如可以通过显微镜、扫描型电子显微镜(SEM)等进行测定,由多个样品算出平均值。
另外,作为导热性片1中的上述纤维状的导热性填充剂的含量,没有特别限制,可以根据目的适当选择,优选为4体积%~40体积%,更优选为5体积%~35体积%。如果上述含量小于4体积%,则有可能难以得到充分低的热阻,如果超过40体积%,则有可能对导热性片1的成型性和上述纤维状的导热性填充剂的取向性造成影响。另外,导热性片1中的包含纤维状的导热性填充剂的导热性填充剂的含量优选为15体积%~75体积%。
需要说明的是,纤维状的导热性填充剂在片主体2的面2a和面2b露出,与电子部件等热源、散热器等散热构件进行热接触。在片主体2的面2a和面2b露出的纤维状导热性填充剂由高分子基体成分的未固化成分被覆的情况下,在导热性片1搭载于电子部件等时能够降低纤维状导热性填充剂与电子部件等的接触热阻。
(无机物填料)
导热性片1也可以进一步含有无机物填料作为导热性填充剂。通过含有无机物填料,能够进一步提高导热性片1的导热性,提高片的强度。作为上述无机物填料,对形状、材质、平均粒径等没有特别限制,可以根据目的适当选择。作为上述形状,例如可列举出球状、椭圆球状、块状、粒状、扁平状、针状等。其中,从填充性的观点出发,优选球状、椭圆形状,特别优选球状。
作为上述无机物填料的材料,例如可列举出氮化铝(氮化铝:AlN)、二氧化硅、氧化铝(氧化铝)、氮化硼、二氧化钛、玻璃、氧化锌、碳化硅、硅(有机硅:silicon)、氧化硅、金属粒子等。它们可以单独使用一种,也可以并用两种以上。其中,优选氧化铝、氮化硼、氮化铝、氧化锌、二氧化硅,从热导率的观点出发,特别优选氧化铝、氮化铝。
另外,上述无机物填料可以使用实施了表面处理的填料。作为上述表面处理,如果用偶联剂对上述无机物填料进行处理,则上述无机物填料的分散性提高,导热性片1的柔软性提高。
关于上述无机物填料的平均粒径,可以根据无机物的种类等适当选择。在上述无机物填料为氧化铝的情况下,其平均粒径优选为1μm~10μm,更优选为1μm~5μm,特别优选为4μm~5μm。若上述平均粒径小于1μm,则粘度变大,有可能难以混合。另一方面,如果上述平均粒径超过10μm,则有可能导热性片1的热阻变大。
进而,在上述无机物填料为氮化铝的情况下,其平均粒径优选为0.3μm~6.0μm,更优选为0.3μm~2.0μm,特别优选为0.5μm~1.5μm。若上述平均粒径小于0.3μm,则粘度变大,有可能难以混合,若超过6.0μm,则有可能导热片1的热阻变大。
需要说明的是,上述无机物填料的平均粒径例如可以利用粒度分布计、扫描型电子显微镜(SEM)进行测定。
需要说明的是,也可以使用上述无机物填料代替上述纤维状导热性填充剂。在该情况下,由于容易在厚度方向上发挥导热性,因此其形状优选为针状、鳞片状,特别优选为鳞片状。作为鳞片状的无机物填料的材料,优选氮化硼。
(其他成分)
导热性片1除了上述高分子基体成分和纤维状导热性填充剂、适当含有的无机物填料以外,还可以根据目的适当含有其他成分。作为其他成分,例如可列举:磁性粉、触变性赋予剂、分散剂、固化促进剂、延迟剂、微增粘剂、增塑剂、阻燃剂、抗氧化剂、稳定剂、着色剂等。另外,也可以通过调节磁性粉的含量来对导热性片1赋予电磁波吸收性能。
(磁性粉)
导热性片1可以通过调节磁性粉的含量来对导热性片1赋予电磁波吸收性能。
对于上述磁性粉的种类,除了具有磁性以外,没有特别限定,可以适当选择公知的磁性粉。例如,可以使用非晶质金属粉、晶质的金属粉末。作为非晶质金属粉,例如可举出Fe-Si-B-Cr系、Fe-Si-B系、Co-Si-B系、Co-Zr系、Co-Nb系、Co-Ta系的金属粉等,作为晶质的金属粉,例如可举出纯铁、Fe系、Co系、Ni系、Fe-Ni系、Fe-Co系、Fe-Al系、Fe-Si系、Fe-Si-Al系、Fe-Ni-Si-Al系的金属粉等。进而,作为上述晶质的金属粉,也可以使用在晶质的金属粉中加入微量的N(氮)、C(碳)、O(氧)、B(硼)等进行微细化而成的微晶质金属粉。
需要说明的是,对于上述磁性金属粉,也可以使用将两种以上材料不同的磁性金属粉、平均粒径不同的磁性金属粉混合而成的磁性金属粉。
另外,对于上述磁性金属粉,优选调节为球状、扁平状等形状。例如,在提高填充性的情况下,优选使用粒径为几μm~几十μm且为球状的磁性金属粉。这样的磁性金属粉末例如可以通过雾化法、将金属羰基化合物热分解的方法来制造。雾化法具有容易制作球状粉末的优点,是使熔融金属从喷嘴流出,向流出的熔融金属吹送空气、水、非活性气体等喷射流,使其作为液滴凝固而制作粉末的方法。在通过雾化法来制造非晶质磁性金属粉末时,为了不使熔融金属结晶化,优选将冷却速度设为1×106(K/s)左右。
在通过上述雾化法来制造非晶质合金粉的情况下,能够使非晶质合金粉的表面成为光滑的状态。若将这样表面凹凸少、比表面积小的非晶质合金粉用作磁性金属粉,则能够提高对高分子基体成分的填充性。进而,通过进行偶联处理,能够进一步提高填充性。
(导热性片的制造方法)
接着,对导热性片1的制造工序进行说明。应用了本技术的导热性片1的制造工序具有:将在高分子基体成分中含有纤维状的导热性填充剂等的导热性树脂组合物成型为预定的形状并使其固化,形成导热性成形体的工序(工序A);将上述导热性成形体切成片状,形成成形体片的工序(工序B);以及通过用第一剥离膜3和第二剥离膜4夹持成形体片并进行压制,从而使成形体片表面平滑化,并且形成树脂被覆层5的工序(工序C)。需要说明的是,在此,对使用纤维状的导热性填充剂的情况进行说明,但在使用鳞片状的无机物填料代替纤维状的导热性填充剂的情况下也可以利用同样的制造工序,在以下的工序中也可以适当替换。
(工序A)
该工序A中,将上述高分子基体成分和纤维状导热性填充剂、适当含有的无机物填料、其他成分配合,制备导热性树脂组合物。需要说明的是,对于配合、制备各成分的步骤没有特别限定,例如,通过在高分子基体成分中添加纤维状导热性填充剂、适当的无机物填料、磁性粉、其他成分并进行混合,从而进行导热性树脂组合物的制备。
接着,使碳纤维等纤维状的导热性填充剂沿一个方向取向。关于该填充剂的取向方法,只要是能够沿一个方向进行取向的方法就没有特别限定。例如,通过在高剪切力下将上述导热性树脂组合物挤出或压入至中空状的模具内,能够比较容易地使纤维状的导热性填充剂沿一个方向取向,上述纤维状的导热性填充剂的取向相同(±10°以内)。
作为上述在高剪切力下将上述导热性树脂组合物挤出或压入至中空状的模具内的方法,具体而言,可举出挤出成型法或模具成型法。在上述挤出成型法中,将上述导热性树脂组合物从模头挤出时,或者在上述模具成型法中,将上述导热性树脂组合物压入至模具时,上述导热性树脂组合物流动,纤维状导热性填充剂沿着其流动方向取向。此时,若在模头的前端安装狭缝,则纤维状导热性填充剂更容易取向。
将挤出或压入至中空状的模具内的上述导热性树脂组合物成型为与该模具的形状、大小相应的块状,通过在维持纤维状的导热性填充剂的取向状态下使上述高分子基体成分固化,由此形成导热性成形体。导热性成形体是指作为切断成预定尺寸而得到的导热性片1的基础的片切取用的母材(成形体)。
中空状的模具和导热性成形体的大小和形状可以根据所要求的导热性片1的大小、形状来决定,例如可以举出截面的纵向大小为0.5cm~15cm且横向大小为0.5cm~15cm的长方体。长方体的长度只要根据需要决定即可。
关于使上述高分子基体成分固化的方法、条件,可以根据高分子基体成分的种类而改变。例如,在上述高分子基体成分为热固性树脂的情况下,可以调节热固化中的固化温度。进而,在该热固性树脂含有液态有机硅凝胶的主剂和固化剂的情况下,优选在80℃~120℃的固化温度下进行固化。另外,作为热固化中的固化时间,没有特别限制,可以设为1小时~10小时。
(工序B)
如图2所示,在将导热性成形体6切成片状而形成成形体片7的工序B中,以相对于取向后的纤维状的导热性填充剂的长轴方向成为0°~90°的角度、更优选成为45°~90°的角度的方式,将导热性成形体6切断成片状。由此,纤维状导热性填充剂沿片主体2的厚度方向取向。
另外,关于导热性成形体6的切断,使用切片装置进行。关于切片装置,只要是能够切断上述导热性成形体6的机构就没有特别限定,可以适当使用公知的切片装置。例如,可以使用超声波切割器、刨子(刨)等。
导热性成形体6的切片厚度为导热性片1的片主体2的厚度,可以根据导热性片1的用途适当设定,例如为0.5~3.0mm。
需要说明的是,在工序B中,也可以通过在从导热性成形体6切出的成形体片7形成切口,从而小片化为多个成形体片7。
(工序C)
在工序C中,在成形体片7的一面粘贴第一剥离膜3,在成形体片7的另一面粘贴第二剥离膜4并进行压制。通过该压制,使成形体片7的表面平滑化,并且使高分子基体成分的未固化成分渗出,在成形体片7的一个面与第一剥离膜3之间、以及成形体片7的另一个面与第二剥离膜4之间形成树脂被覆层5。在此,导热性片1的面2a和面2b是经切片而成的面,是切片后被压制而成的面。由此,能够形成导热性片1,减少片表面的凹凸,并且被覆露出的纤维状的导热性填充剂,提高与热源、散热构件的密合性,减轻低载荷时的界面接触电阻,提高导热效率。
需要说明的是,关于上述压制,例如能够使用由平盘和表面平坦的压头构成的一对压制装置来进行。另外,也可以使用夹送辊进行压制。
作为上述压制时的压力,没有特别限制,可以根据目的适当选择,但如果过低,则存在与不进行压制的情况相比热阻不变的倾向,如果过高,则存在片拉伸的倾向,因此优选设为0.1MPa~100MPa的压力范围,更优选设为0.5MPa~95MPa的压力范围。
作为粘贴于成形体片7的两面的第一剥离膜3和第二剥离膜4,例如可以使用PET膜、聚乙烯膜等塑料膜。在该情况下,第一剥离膜3和第二剥离膜4可以对成形体片7的表面上的粘贴面实施蜡处理、氟处理等剥离处理。另外,第一剥离膜3和第二剥离膜4可以实施压纹加工。
另外,第一剥离膜3和第二剥离膜4通过使厚度和/或材质不同,从而形成为从片主体2的剥离强度(N)不同。例如,在30mm×30mm的导热性片1中,在作为第一剥离膜3使用实施了蜡处理的厚度25μm的PET膜、作为第二剥离膜4使用进行了压纹处理的厚度80μm的聚乙烯膜的情况下,在拉伸·压缩试验机中,在负载传感器为50(N)、速度为300mm/min的条件下进行180度剥离试验时,关于从片主体2剥离的剥离强度(N),第一剥离膜3为0.03(N)(弯曲半径3mm)、第二剥离膜4为0.05(N)(弯曲半径0.5mm以下)。
(导热性片的安装工序)
在实际使用时,导热性片1例如安装于半导体装置等电子部件、散热器等各种散热构件。此时,导热性片1从自片主体2剥离的剥离强度小的剥离膜、例如上述例子中所说的第一剥离膜3剥离。由此,附着于第一剥离膜3的片主体2不会全部从第二剥离膜4剥离,能够在被第二剥离膜4支撑的状态下使片主体2的一个面2a露出。关于导热性片1,将树脂被覆层5露出的片主体2的一个面2a粘贴于半导体装置等电子部件或散热器等散热构件,然后,将第二剥离膜4从片主体2的另一个面2b剥离。
例如如图3所示,导热性片1安装于在各种电子设备中内置的半导体装置50,被夹持在热源与散热构件之间。图3所示的半导体装置50至少具有电子部件51、散热装置52和导热性片1,导热性片1被夹持在散热装置52与电子部件51之间。另外,导热性片1通过被夹持在散热装置52与散热器53之间,从而与散热装置52一起构成对电子部件51的热进行散热的散热构件。
作为电子部件51,没有特别限制,可以根据目的适当选择,例如可列举CPU、MPU、图形运算元件、图像传感器等各种半导体元件、天线元件、电池等。散热装置52只要是对电子部件51发出的热进行散热的构件,就没有特别限制,可以根据目的适当选择。通过使用导热性片1,半导体装置50具有高散热性,另外,根据片主体2中的磁性粉的含量,电磁波抑制效果也优异。
需要说明的是,导热性片1的安装场所当然不限于散热装置52与电子部件51之间、散热装置52与散热器53之间,可以根据电子设备、半导体装置的构成而适当选择。另外,作为散热构件,除了散热装置52、散热器53以外,只要是传导从热源产生的热并使其向外部扩散的散热构件即可,例如可列举出散热器、冷却器、压料垫、印刷基板、冷却风扇、珀耳帖元件、热管、金属罩、壳体等。
(实施例1)
本实施例中,如下述表1所示,首先,将有机硅树脂(粘合剂的一例):34体积%、晶体形状为六方晶型的鳞片状的氮化硼(D50为40μm):25体积%、氮化铝(D50为1.5μm):19体积%、球状氧化铝粒子(D50为5μm):19体积%、氧化锌(D50为1μm):1体积%、氢氧化铝(D50为8μm):1体积%、和偶联剂:1体积%均匀地混合,从而制备导热性片形成用的树脂组合物。
接着,通过挤出成形法,将导热性片形成用的树脂组合物流入具有长方体状的内部空间的模具(开口部:50mm×50mm)中,在60℃的烘箱中加热4小时,形成成形体块(图2所示的导热性成形体6)。需要说明的是,在模具的内表面以剥离处理面成为内侧的方式粘贴有剥离聚对苯二甲酸乙二醇酯膜。接着,如表1所示,利用超硬刀具将所得到的成形体块切成片状,从而得到鳞片状的氮化硼在片的厚度方向上取向的导热性片1。此时,如表1所示,以该导热性片1的任一面的Sa成为3.442μm且Sz成为40.990μm的方式,利用超硬刀具对成形体块进行切片而获得导热性片1。
(实施例2)
本实施例中,首先,在玻璃容器中投入100g平均纤维直径:9μm、平均纤维长度:110μm的沥青系碳纤维、450g乙醇,用搅拌叶片进行混合,得到浆料液。一边以流量:160mL/min向浆料液中加入氮气进行惰性化,一边向浆料中加入25g二乙烯基苯(93%二乙烯基苯)。加入二乙烯基苯10分钟后,将预先溶解在50g乙醇中的0.500g聚合引发剂(油溶性偶氮聚合引发剂)投入浆料液中。投入后,搅拌5分钟后,停止利用氮气的惰性化。
然后,一边搅拌一边开始升温,在70℃保持温度,降温至40℃。需要说明的是,将从升温开始到降温开始作为反应时间。降温后,静置15分钟,使分散于浆料液中的固体成分沉淀。沉淀后,通过倾析除去上清液,再次加入750g溶剂,搅拌15分钟,洗涤固体成分。洗涤后,通过抽滤回收固体成分,将回收的固体成分在100℃干燥6小时,由此得到DVB绝缘被膜碳纤维(用绝缘物被覆表面的碳纤维的一例)。
接着,在本实施例中,如表1所示,将有机硅树脂:28体积%、球状氧化铝粒子(D50为15μm):30体积%、粒状氮化铝(D50为1.5μm):33体积%、氢氧化铝(D50为8μm):1体积%、平均纤维长度为110μm的DVB绝缘被膜碳纤维:6体积%、以及偶联剂:1体积%混合,制备有机硅组合物。
接着,通过挤出成形法,将导热性片形成用的树脂组合物流入具有长方体状的内部空间的模具(开口部:50mm×50mm)中,在100℃的烘箱中加热6小时,形成成形体块。需要说明的是,在模具的内表面以剥离处理面成为内侧的方式粘贴有剥离聚对苯二甲酸乙二醇酯膜。接着,如表1所示,利用超硬刀具将所得到的成形体块切成期望的厚度,从而得到碳纤维在片的厚度方向上取向的导热性片1。此时,如表1所示,以该导热性片1的任一面的Sa成为4.225μm且Sz成为45.880μm的方式,利用超硬刀具对成形体块进行切片而获得导热性片1。
(实施例3)
本实施例中,首先,在聚乙烯制容器中投入100g平均纤维直径9μm、平均纤维长度110μm的沥青系碳纤维、200g四乙氧基硅烷(TEOS)、900g乙醇,用搅拌叶片进行混合。然后,一边加热至50℃,一边用5分钟投入176g反应引发剂(10%氨水)。将溶剂的投入结束的时刻设为0分钟,进行3小时搅拌。搅拌结束后,降温,进行抽滤,回收固体成分,用水和乙醇洗涤固体成分,再次进行抽滤,回收固体成分。将回收的固体成分在100℃干燥2小时后,进一步在200℃进行8小时烧成,从而得到SiO2绝缘被覆碳纤维(用绝缘物被覆表面的碳纤维的一例)。
接着,在本实施例中,将有机硅树脂:28体积%、球状氧化铝粒子(D50为15μm):30体积%、球状氧化铝粒子(D50为5μm):1体积%、氢氧化铝(D50为8μm):1体积%、粒状氮化铝(D50为1.5μm):33体积%、平均纤维长度为110μm的SiO2绝缘被膜碳纤维:6体积%、以及偶联剂:1体积%混合,制备有机硅组合物。
接着,通过挤出成形法,将导热性片形成用的树脂组合物流入具有长方体状的内部空间的模具(开口部:50mm×50mm)中,在100℃的烘箱中加热6小时,形成成形体块。在此,在模具的内表面以剥离处理面成为内侧的方式粘贴有剥离聚对苯二甲酸乙二醇酯膜。接着,如表1所示,利用超硬刀具将所得到的成形体块切成期望的厚度,从而得到碳纤维在片的厚度方向上取向的导热性片1。此时,如表1所示,以该导热性片1的任一面的Sa成为3.982μm且Sz成为49.784μm的方式,利用超硬刀具对成形体块进行切片而获得导热性片1。
(实施例4)
本实施例中,如下述表1所示,将有机硅树脂:28体积%、碳纤维:6体积%、球状氧化铝粒子(D50为15μm):30体积%、球状氧化铝粒子(D50为5μm):1体积%、粒状氮化铝(D50为1.5μm):33体积%、氢氧化铝(D50为8μm):1体积%和偶联剂:1体积%混合,制备有机硅组合物。
接着,通过挤出成形法,将导热性片形成用的树脂组合物流入具有长方体状的内部空间的模具(开口部:50mm×50mm)中,在100℃的烘箱中加热6小时,形成成形体块。需要说明的是,在模具的内表面以剥离处理面成为内侧的方式粘贴有剥离聚对苯二甲酸乙二醇酯膜。接着,如表1所示,利用超硬刀具将所得到的成形体块切成期望的厚度,从而得到碳纤维在片的厚度方向上取向的导热性片1。此时,如表1所示,以该导热性片1的任一面的Sa成为4.989μm且Sz成为46.879μm的方式,利用超硬刀具对成形体块进行切片而获得导热性片1。
(比较例1~4)
比较例1~4中,利用切割刀(合金工具钢)对实施例1~4中获得的成形体块进行切片,从而获得碳纤维在厚度方向上取向的导热性片1。此时,在比较例1中,如表1所示,以导热性片1的任一面的Sa成为5.687μm且Sz成为71.652μm的方式,利用超硬刀具对成形体块进行切片而得到导热性片1。另外,在比较例2中,如表1所示,以导热性片1的任一面的Sa为5.899μm且Sz为65.050μm的方式,利用超硬刀具对成形体块进行切片,得到导热性片1。另外,在比较例3中,如表1所示,以导热性片1的任一面的Sa为5.680μm且Sz为57.380μm的方式,利用超硬刀具对成形体块进行切片,得到导热性片1。另外,在比较例4中,如表1所示,以导热性片1的任一面的Sa为7.761μm且Sz为65.230μm的方式,利用超硬刀具对成形体块进行切片,得到导热性片1。
(热特性的确认)
实施例1~4和比较例1~4中分别得到的导热性片1的热阻按照以下步骤进行测定。将上述厚度的导热性片1加工成直径20mm的圆形,得到试验片。接着,将得到的试验片夹在铜之间,以1kgf/cm2的载荷测定热阻[℃·cm2/W]。以横轴为测定时厚度,以纵轴为热阻值进行绘制曲线,由截距求出接触热阻。
(表面粗糙度)
实施例1~4和比较例1~4中分别得到的导热性片1的表面粗糙度是利用株式会社基恩士(Keyence)制One-shot 3D形状机VR5200来测定。Sa(算术平均高度)是将Ra(线的算术平均高度)扩展到面的参数,表示各点的高度相对于表面的平均面之差的绝对值的平均。Sa通常是在评价面粗糙度时使用。Sz(最大高度)表示从表面的最高点到最低点的距离。于是,如表1所示,将实施例1与比较例1、实施例2与比较例2、实施例3与比较例3、以及实施例4与比较例4进行比较时,与比较例的导热性片1相比,实施例的导热性片1的热导率和绝缘击穿电压变高。由此可知,通过将包含粘合剂和各向异性导热填料、且该各向异性导热填料在厚度方向上取向的导热性片1的Sa设为5μm以下且Sz设为50μm以下、绝缘击穿电压设为0.5kV/mm以上,从而能够得到具有绝缘性且低热阻的导热片1。即,即使使用绝缘性材料,通过将Sa和Sz设为预定值以下,也可得到能够在厚度方向上良好地传热的导热性片1。而且,在电子设备中,通过将实施例1~4的导热性片1夹在构成该电子设备的电子部件51(发热体的一例)与散热风扇、散热板等(散热构件的一例)之间,从而能够提高对散热构件的热导率,能够高效地散热。
[表1]
符号说明
1导热性片、2片主体、2a面、2b面、3第一剥离膜、4第二剥离膜、5树脂被覆层、6导热性成形体、7成形体片、50半导体装置、51电子部件、52散热装置、53散热器。
Claims (5)
1.一种导热性片,其是包含粘合剂和各向异性导热填料,且所述各向异性导热填料在厚度方向上取向的导热性片,
该导热性片的任一面的Sa为5μm以下,Sz为50μm以下,绝缘击穿电压为0.5kV/mm以上。
2.根据权利要求1所述的导热性片,所述各向异性导热填料为氮化硼、碳纤维和表面由绝缘物被覆的碳纤维中的任一种。
3.根据权利要求1或2所述的导热性片,其进一步含有氧化铝、氮化铝、氧化锌和氢氧化铝中的任一种。
4.根据权利要求1~3中任一项所述的导热性片,所述粘合剂为有机硅。
5.一种电子设备,将权利要求1~4中任一项所述的导热性片夹在发热体与散热构件之间而成。
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