CN116779411B - Multifunctional plasma etching machine with composite physical and chemical effects - Google Patents
Multifunctional plasma etching machine with composite physical and chemical effects Download PDFInfo
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- CN116779411B CN116779411B CN202311036263.3A CN202311036263A CN116779411B CN 116779411 B CN116779411 B CN 116779411B CN 202311036263 A CN202311036263 A CN 202311036263A CN 116779411 B CN116779411 B CN 116779411B
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- 238000001020 plasma etching Methods 0.000 title claims abstract description 14
- 239000002131 composite material Substances 0.000 title claims description 10
- 230000002925 chemical effect Effects 0.000 title abstract description 7
- 230000000704 physical effect Effects 0.000 title abstract description 7
- 238000006243 chemical reaction Methods 0.000 claims abstract description 41
- 238000005530 etching Methods 0.000 claims abstract description 27
- 230000007306 turnover Effects 0.000 claims abstract description 10
- 238000004140 cleaning Methods 0.000 claims description 24
- 230000000694 effects Effects 0.000 claims description 13
- 238000005192 partition Methods 0.000 claims description 9
- 230000003028 elevating effect Effects 0.000 claims description 6
- 230000000149 penetrating effect Effects 0.000 claims description 5
- 238000005086 pumping Methods 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 3
- 238000005096 rolling process Methods 0.000 claims description 3
- 238000003754 machining Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 80
- 239000007789 gas Substances 0.000 description 16
- 238000000034 method Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- 239000011261 inert gas Substances 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000003486 chemical etching Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The application relates to the technical field of etchers, in particular to a multifunctional plasma etcher with a combined physical and chemical effect, which comprises an etcher body, wherein a reaction cavity is arranged in the etcher body, a gas supply module, an ionization module, a vacuumizing module and a bearing module are arranged in the reaction cavity, a turnover mechanical arm is also arranged in the reaction cavity, the end part of the turnover mechanical arm is rotationally connected with a wafer holder through a first servo motor, the bearing module comprises a bearing platform, a chuck for placing a wafer is arranged on the upper side of the bearing platform, a lifting hole is formed in the middle of the chuck, and a lifting device for jacking up the wafer on the upper side of the chuck is arranged in the bearing platform. The problem of among the prior art, when carrying out two-sided etching to the wafer through the plasma etching machine, need open the reaction chamber upset, reduce machining efficiency is solved.
Description
Technical Field
The application relates to the technical field of etchers, in particular to a multifunctional plasma etcher with a combined physicochemical effect.
Background
Plasma etchers, also known as plasma etchers, plasma planar etchers, plasma surface processors, plasma cleaning systems, and the like. Plasma etching, the most common form in dry etching, is based on the principle that a gas exposed to an electron region forms a plasma, and ionized gas generated thereby and a gas composed of high-energy electrons are released, thereby forming plasma or ions, and when ionized gas atoms are accelerated by an electric field, enough force is released to tightly adhere a material or etch a surface with a surface expulsion force. Plasma etching includes physical etching and chemical etching. In the physical etching, inert gas such as argon is generally used, after charged plasma is generated, the argon can accelerate bombardment on the surface of the wafer under the action of a strong electric field, and unprotected surface materials are removed through physical actions such as sputtering. The chemical etching adopts process gas capable of reacting with the substance on the surface of the wafer, and after the reactive gas generates plasma, a large amount of ions, electrons and free radicals are contained in the plasma, so that the plasma has strong chemical activity, and when the reactive plasma reaches the surface of the wafer and is adsorbed, the chemical reaction can be rapidly performed on specific etching materials to form volatile products, and the volatile products are pumped by a vacuum system, so that the effect of selectively removing the surface materials is achieved. The equipment for etching process includes reaction chamber, power supply and vacuum part. The workpiece is fed into a reaction chamber that is evacuated by a vacuum pump. The gas is introduced and exchanged with the plasma. The plasma reacts on the surface of the workpiece, and volatile byproducts of the reaction are pumped by a vacuum pump.
In the prior art, when a wafer is etched by a plasma etching machine, most of the wafers can only be etched on one side, and when the wafers are required to be etched on both sides, a reaction chamber is required to be opened, and then the wafers are turned over manually or mechanically, so that the other sides of the wafers are etched. Because the reaction chamber needs to be depressurized and then re-vacuumized, it takes a long time, resulting in a decrease in the overall processing efficiency.
Disclosure of Invention
The application aims to provide a multifunctional plasma etching machine with a combined physical and chemical effect, which solves the problems that in the prior art, when a double-sided etching is carried out on a wafer by the plasma etching machine, a reaction chamber needs to be opened for overturning, and the processing efficiency is reduced.
In order to solve the technical problems, the application adopts the following technical scheme:
the utility model provides a compound multi-functional plasma etching machine of physical chemistry effect, includes the etching machine body, is provided with the reaction chamber in the etching machine body, is provided with air feed module, ionization module, evacuation module and bears the module in the reaction chamber, still is provided with the upset arm in the reaction chamber, and the tip of upset arm is connected with the wafer holder through first servo motor rotation, bears the module and includes the cushion cap, and the upside of cushion cap is provided with the chuck that is used for placing the wafer, and the middle part of chuck is provided with the lifting hole, is provided with the elevating gear who is used for the wafer jack-up with the chuck upside in the cushion cap.
According to the technical scheme, the overturning mechanical arm is arranged in the reaction cavity through a guide rail, the guide rail is vertically arranged on the cavity wall of the reaction cavity, the overturning mechanical arm comprises a first folding arm and a second folding arm, one end of the first folding arm is connected with the guide rail in a vertical sliding mode through a movable base, the side face of the other end of the overturning mechanical arm is connected with the side face of one end of the second folding arm in a rotating mode through a second servo motor, and the side face of the other end of the second folding arm is connected with the wafer holder in a rotating mode through a first servo motor.
The guide rail comprises a sliding plate and a supporting bar which are connected in a T shape, one side of the supporting bar is connected with the cavity wall of the reaction cavity, the other side of the supporting bar is connected with the middle part of one side of the sliding plate, a sliding groove is formed in one side of the movable base, and the other side of the movable base is connected with the first folding arm through a third servo motor; when the movable base is arranged on the guide rail, the sliding groove is connected with the sliding plate in an up-and-down sliding way; a driving hole communicated with the bottom of the sliding groove is formed in one side, far away from the sliding groove, of the movable base, a driving motor is arranged at the position of the driving hole, a first gear is sleeved on an output shaft of the driving motor, a rack matched with the first gear is vertically arranged on one side, facing the bottom of the sliding groove, of the sliding plate, and one side of the first gear penetrates into the sliding groove through the driving hole to be meshed with the rack; the groove wall of the sliding groove is connected with a rotating wheel on one side of the sliding plate connected with the supporting bar through a rotating rod, and the outer wall of the rotating wheel is in rolling fit with the sliding plate.
The reaction chamber is divided into a main chamber and a protection chamber through a partition plate, the air supply module and the vacuum pumping module are arranged in the main chamber, the overturning mechanical arm is arranged in the protection chamber, an operation port which penetrates through the main chamber and the protection chamber is arranged on the partition plate, a gate for controlling the on-off of the operation port is arranged in the partition plate, and when a wafer needs to be overturned, the overturning mechanical arm drives the wafer holder to extend into the main chamber from the operation port.
The further technical scheme is that the lifting device comprises a lifting motor and a supporting disc, the lifting motor is arranged in the bearing platform, a lifting shaft of the lifting motor is upwards arranged, the lower side of the supporting disc is connected with an output shaft of the lifting motor, and the supporting disc upwards passes through the lifting Kong Dingqi wafer through the lifting motor.
The wafer holder comprises a connecting part, a fourth servo motor, a holding plate, a fifth servo motor and two clamping arms, wherein the side face of the connecting part is rotationally connected with the side face of the second folding arm through the first servo motor, the fourth servo motor is arranged on the lower side of the connecting part, an output shaft of the fourth servo motor is connected with the side face of the holding plate, a rotating hole penetrating through the upper side and the lower side is formed in the holding plate, the fifth servo motor is arranged on the lower side of the holding plate, an output shaft of the fifth servo motor penetrates through the rotating hole from the lower side of the rotating hole, a second gear is sleeved above the rotating hole, a third gear and a fourth gear are arranged on the upper side of the holding plate at the edge of the rotating hole through two rotating shaft sleeves, the second gear is meshed with the third gear, the third gear is meshed with the fourth gear, and the two clamping arms are respectively connected with the third gear and the fourth gear.
The further technical scheme is that clamping blocks are arranged on opposite sides of the two clamping arms, clamping grooves are formed on opposite sides of the two clamping blocks, and a first film pressure sensor is arranged between the clamping blocks and the clamping arms; the protection cavity is characterized in that mounting columns are arranged on the cavity wall of the protection cavity, fixing columns are arranged on two opposite sides of the mounting columns, pressure grooves are formed in one ends, far away from the mounting columns, of the two fixing columns, sliding columns are arranged in the two pressure grooves in a sliding mode, a second film pressure sensor is arranged between the sliding columns and the groove bottoms of the pressure grooves, one ends, far away from the groove bottoms of the pressure grooves, of the sliding columns extend out of the pressure grooves, and arc-shaped rods are connected.
Still further technical scheme is, the opposite one side of two arm clamps all is provided with the grip block, and the cushion cap passes through lift sleeve installation chuck, and the middle part of cushion cap is sunken to be provided with the lift groove that aligns with the lift hole, and elevating gear installs in the lift inslot, and lift sleeve upper and lower slip cap is located on the outer wall of cushion cap, and the chuck is installed in lift telescopic upper end.
The further technical scheme is that the lifting sleeve is sleeved on the outer wall of the bearing platform in an up-and-down sliding way through a screw motor or a push rod motor; an infrared signal emitter is arranged on the outer wall of the lifting sleeve, and an infrared signal receiver corresponding to the infrared signal emitter is arranged on the inner wall of the reaction cavity; the infrared signal transmitter and the infrared signal receiver are both arranged in a plurality of.
The further technical scheme is that a cleaning ring pipe is arranged in the lifting groove around the lifting device, a plurality of air holes are formed in the outer wall of the cleaning ring pipe, and the cleaning ring pipe is connected with an external air supply device; the cleaning ring pipe is arranged in the lifting groove in a lifting manner through the lifting rod; the top of the edge of the chuck is provided with a cleaning air nozzle which is connected with an external air supply device.
Compared with the prior art, the application has at least one of the following beneficial effects: 1. by arranging the turnover mechanical arm, the wafer can be clamped by the wafer clamp when the wafer needs to be turned over, and then the wafer is turned over, so that the other surface of the wafer is etched; 2. by arranging the lifting device, the wafer in the chuck can be jacked up, so that the wafer holder can better hold the edge of the wafer when the wafer is overturned, and the damage to the middle part of the wafer in the holding process is avoided; 3. the whole overturning process is completed under the condition that the reaction cavity is not required to be opened, so that the pressure relief and vacuum pumping are not required to be repeated, and the processing efficiency is improved.
Drawings
FIG. 1 is a schematic front view of a multifunctional plasma etcher with combined physicochemical effects in accordance with the present application.
FIG. 2 is a schematic cross-sectional view of a physical-chemical effect composite multifunctional plasma etcher in accordance with the present application.
FIG. 3 is a schematic cross-sectional view of a physical-chemical effect composite multifunctional plasma etcher in accordance with the present application.
FIG. 4 is a schematic cross-sectional view of a platform of a physical-chemical effect composite multifunctional plasma etcher in accordance with the present application.
FIG. 5 is a schematic cross-sectional view of a combination of a physical and chemical effect of a multifunctional plasma etcher of the application at the junction of a rail and a mobile base.
FIG. 6 is a schematic diagram of a wafer holder of a physical-chemical effect composite multifunctional plasma etcher in accordance with the present application.
Fig. 7 is a partially enlarged schematic view of fig. 6 at a mark a.
FIG. 8 is a schematic cross-sectional view of a pressure testing mechanism of a physical-chemical effect composite multifunctional plasma etcher in accordance with the present application.
Icon: 1-etching machine body, 2-reaction chamber, 3-air supply module, 4-ionization module, 5-evacuation module, 6-turnover mechanical arm, 7-first servo motor, 8-wafer holder, 9-bearing platform, 10-chuck, 11-lifting hole, 12-guide rail, 13-first folding arm, 14-second folding arm, 15-moving base, 16-second servo motor, 17-sliding plate, 18-support bar, 19-sliding groove, 20-third servo motor, 21-driving hole, 22-driving motor, 23-first gear, 24-rack, 25-rotating rod, 26-rotating wheel, 27-main cavity, 28-protection cavity, 29-operation port, 30-gate, 31-lifting motor, 32-supporting disk, 33-lifting shaft, 35-connecting part, 36-fourth servo motor, 37-clamping plate, 38-fifth servo motor, 39-clamping arm, 40-rotating hole, 41-second gear, 42-third gear, 43-fourth gear, 44-lifting sleeve, 45-lifting groove, 46-screw motor, 47-infrared signal emitter, 48-infrared signal receiver, 49-cleaning ring pipe, 50-lifting rod, 51-cleaning air nozzle, 52-clamping block, 53-clamping groove, 54-mounting column, 55-fixed column, 56-pressure groove, 57-sliding column, 58-second film pressure sensor, 59-arc shaped rod.
Detailed Description
The present application will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present application more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the application.
Fig. 1 to 8 show an embodiment of the present application.
Examples:
the utility model provides a compound multi-functional plasma etching machine of physicochemical effect, includes etching machine body 1, is provided with reaction chamber 2 in the etching machine body 1, is provided with air feed module 3, ionization module 4, evacuation module 5 and bears the weight of the module in the reaction chamber 2, still is provided with upset arm 6 in the reaction chamber 2, and the tip of upset arm 6 is connected with wafer holder 8 through first servo motor 7 rotation, bears the weight of the module and includes cushion cap 9, and the upside of cushion cap 9 is provided with the chuck 10 that is used for placing the wafer, and the middle part of chuck 10 is provided with lifting hole 11, is provided with the elevating gear who is used for the wafer jack-up with the chuck 10 upside in the cushion cap 9. Through setting up upset arm 6, can be when needs upset wafer through wafer holder 8 with the wafer centre gripping, then overturn to carry out the etching to the another side of wafer. Through setting up elevating gear, can jack-up the wafer in the chuck 10 to make wafer holder 8 can be when the upset wafer, better centre gripping holds the edge of wafer, avoids the centre gripping process to cause the damage to the surface of wafer. Through setting up air feed module 3 and ionization module 4, can provide different gases through air feed module 3, air feed module 3 is provided with a plurality of air jet in reaction chamber 2, spouts gas through the air jet, then ionizes through ionization module 4, forms plasma, carries out etching of physical vapor or etching of chemical vapor to the wafer. Plasma gas or volatile products and the like after etching can be pumped out by the vacuum-pumping module 5.
A multifunctional plasma etching machine with composite physical and chemical effects adopts RIBE plasma etching, and has the IBE physical etching function and the RIE chemical reaction etching function. Physical etching can be performed by supplying inert gas such as argon through the gas supply module 3, chemical etching can be performed by supplying process gas through the gas supply module 3, or physical chemical effect composite etching can be performed by supplying inert gas such as argon and process gas through the gas supply module 3 colleagues. The turnover mechanical arm 6 is installed in the reaction cavity 2 through a guide rail 12, the guide rail 12 is vertically installed on the cavity wall of the reaction cavity 2, the turnover mechanical arm 6 comprises a first folding arm 13 and a second folding arm 14, one end of the first folding arm 13 is connected with the guide rail 12 in a vertical sliding mode through a movable base 15, the side face of the other end of the turnover mechanical arm is connected with the side face of the second folding arm 14 in a rotating mode through a second servo motor 16, and the side face of the other end of the second folding arm 14 is connected with the wafer holder 8 in a rotating mode through a first servo motor 7. By means of the arrangement, when the turning mechanical arm 6 is not needed, the first folding arm 13 and the second folding arm 14 can be folded and stored through the second servo motor 16 between the first folding arm 13 and the second folding arm 14, and normal etching of the wafer is prevented from being affected. Through setting up guide rail 12, can be when first folding arm 13 and second folding arm 14 are folding, reciprocate, avoid touching the chamber wall that bears module or reaction chamber 2, make more smooth and easy in folding, the operation is more nimble.
The guide rail 12 comprises a sliding plate 17 and a supporting bar 18 which are connected in a T shape, one side of the supporting bar 18 is connected with the cavity wall of the reaction cavity 2, the other side of the supporting bar is connected with the middle part of one side of the sliding plate 17, one side of the movable base 15 is provided with a sliding groove 19, and the other side of the movable base is connected with the first folding arm 13 through a third servo motor 20; when the movable base 15 is mounted on the guide rail 12, the sliding groove 19 and the sliding plate 17 are connected in a vertical sliding manner; a driving hole 21 communicated with the bottom of the sliding groove 19 is formed in one side of the moving base 15 far away from the sliding groove 19, a driving motor 22 is arranged at the position of the driving hole 21 on the moving base 15, a first gear 23 is sleeved on an output shaft of the driving motor 22, a rack 24 matched with the first gear 23 is vertically arranged on one side of the sliding plate 17 facing the bottom of the sliding groove 19, and one side of the first gear 23 penetrates into the sliding groove 19 through the driving hole 21 to be meshed with the rack 24; the groove wall of the sliding groove 19 is connected with a rotating wheel 26 through a rotating rod 25 at one side of the sliding plate 17 connected with the supporting bar 18, and the outer wall of the rotating wheel 26 is in rolling fit with the sliding plate 17. When the moving base 15 needs to move up and down, the driving motor 22 can be started to drive the moving base 15 to move up and down along the guide rail 12 through the engagement relationship between the first gear 23 and the rack 24. The movable base 15 can be stably mounted on the guide rail 12 by the cooperation of the rotating wheel 26 and the slide plate 17. And at the same time, the smoothness of the up-and-down movement of the moving base 15 along the guide rail 12 can be improved.
The reaction chamber 2 is divided into a main chamber 27 and a protection chamber 28 through a partition plate, the air supply module 3, the vacuumizing module 5 and the bearing module are arranged in the main chamber 27, the overturning mechanical arm 6 is arranged in the protection chamber 28, an operation opening 29 penetrating through the main chamber 27 and the protection chamber 28 is arranged on the partition plate, a gate 30 used for controlling the on-off of the operation opening 29 is arranged in the partition plate, and when a wafer needs to be overturned, the overturning mechanical arm 6 drives the wafer holder 8 to extend into the main chamber 27 from the operation opening 29. Through setting up baffle and gate 30, can be when the needs upset wafer, through opening gate 30 and start upset arm 6, make upset arm 6 drive wafer holder 8 stretch into in the main cavity 27 from protection chamber 28, the wafer is held and the upset is carried out. After the overturning is completed, the overturning mechanical arm 6 drives the wafer holder 8 to retract into the protection cavity 28. The shutter 30 is closed to isolate the protected cavity 28 from the main cavity 27. This is done to avoid plasma damage to the flipping robot 6 or wafer holder 8 during etching.
The lifting device comprises a lifting motor 31 and a supporting disc 32, the lifting motor 31 is arranged in the bearing platform 9, a lifting shaft 33 of the lifting motor 31 is upwards arranged, the lower side of the supporting disc 32 is connected with an output shaft of the lifting motor 31, and the supporting disc 32 upwards penetrates through the lifting hole 11 through the lifting motor 31 to jack up the wafer. By means of the arrangement, the supporting disc 32 can be driven by the lifting motor 31 to jack up the wafer, so that the wafer can be jacked out of the chuck 10, and the wafer holder 8 can conveniently clamp and fix the edge position of the wafer.
The wafer holder 8 comprises a connecting part 35, a fourth servo motor 36, a clamping plate 37, a fifth servo motor 38 and two clamping arms 39, wherein the side surface of the connecting part 35 is rotationally connected with the side surface of the second folding arm 14 through the first servo motor 7, the fourth servo motor 36 is arranged at the lower side of the connecting part 35, an output shaft of the fourth servo motor 36 is connected with the side surface of the clamping plate 37, a rotating hole 40 penetrating through the upper side and the lower side is formed in the clamping plate 37, the fifth servo motor 38 is arranged at the lower side of the clamping plate 37, the output shaft of the fifth servo motor 38 penetrates through the rotating hole 40 from the lower side of the rotating hole 40, a second gear 41 is sleeved above the rotating hole 40, a third gear 42 and a fourth gear 43 are arranged at the upper side of the clamping plate 37 at the edge of the rotating hole 40 through two rotating shaft sleeves, the second gear 41 is meshed with the third gear 42 and the fourth gear 43, the two clamping arms 39 are respectively connected with the third gear 42 and the fourth gear 43. In this arrangement, when a wafer needs to be clamped, the wafer clamp 8 is driven to extend into the main cavity 27 by the overturning mechanical arm 6, then the wafer is jacked up by starting the lifting motor 31, then the clamping arms 39 are adjusted to be horizontal by the first servo motor 7, then the two clamping arms 39 extend into two opposite sides of the wafer, then the two clamping arms 39 are close to each other by the fifth servo motor 38 to clamp the wafer, and after the wafer is clamped, the wafer is lifted up by the fourth servo motor 36 or the overturning mechanical arm 6, so that the upper space and the lower space of the wafer are enough overturned. The fourth chuck plate 37 is then turned over by activating the fourth chuck motor, and the etching is continued after the wafer is returned to the support plate 32 by the first servo motor 7 or the turning arm 6, and then returned to the chuck 10 by the support plate 32.
Clamping blocks 52 are arranged on opposite sides of the two clamping arms 39, clamping grooves 53 are arranged on opposite sides of the two clamping blocks 52, and a first film pressure sensor is arranged between the clamping blocks 52 and the clamping arms 39; the cavity wall of the protection cavity 28 is provided with a mounting column 54, two opposite sides of the mounting column 54 are respectively provided with a fixing column 55, one ends of the two fixing columns 55, which are far away from the mounting column 54, are respectively provided with a pressure groove 56, sliding columns 57 are respectively arranged in the two pressure grooves 56 in a sliding manner, a second film pressure sensor 58 is arranged between the sliding columns 57 and the bottoms of the pressure grooves 56, and one ends of the sliding columns 57, which are far away from the bottoms of the pressure grooves 56, extend out of the pressure grooves 56 and are connected with arc rods 59. By means of the arrangement, the wafer can be clamped through the clamping grooves 53 on the two clamping blocks 52, the pressure of the two clamping arms 39 on the wafer can be well detected through the first film pressure sensor, and accordingly the starting and stopping of the fifth servo motor 38 are controlled through the preset pressure of the system, and accordingly the two clamping arms 39 are controlled to be continuously closed. By providing the pressure test structure with the second film pressure sensor 58 in the protection cavity 28, the clamp arm 39 can be detected periodically or irregularly when the clamp arm 39 is retracted into the protection cavity 28, if the clamp arm 39 clamps two arc rods 59, the pressure values generated by the first film pressure sensor and the second film pressure sensor 58 deviate, and the wafer clamp 8 of the etching machine needs to be overhauled, so that damage to the wafer due to overlarge clamping force generated by the working of the two clamp arms 39 is avoided.
The chuck 10 is installed through the lift sleeve 44 to the cushion cap 9, and the middle part of cushion cap 9 is sunken to be provided with the lift groove 45 that aligns with lift hole 11, and elevating gear installs in lift groove 45, and the lift sleeve 44 slip cap is located on the outer wall of cushion cap 9 from top to bottom, and chuck 10 installs in the upper end of lift sleeve 44. By providing the lift sleeve 44 to drive the chuck 10, the chuck 10 can be driven to move downward, so that enough space exists between the chuck 10 and the ceiling of the reaction chamber 2 to satisfy wafer flipping. And after the overturning is completed, the chuck 10 can be lifted, so that the wafer and the top air supply module 3 have a proper distance for etching.
The lifting sleeve 44 is sleeved on the outer wall of the bearing platform 9 in an up-and-down sliding way through a screw motor 46 or a push rod motor; an infrared signal emitter 47 is arranged on the outer wall of the lifting sleeve 44, and an infrared signal receiver 48 corresponding to the infrared signal emitter 47 is arranged on the inner wall of the reaction cavity 2; the infrared signal transmitter 47 and the infrared signal receiver 48 are provided in plural. By providing the infrared signal emitter 47 and the infrared signal receiver 48, the position of the lifting sleeve 44 can be positioned, and the chuck 10 is prevented from tilting in the repeated lifting process. By limiting the emitted beam of the infrared signal emitter 47, it is possible to emit only a slim beam, thereby improving accuracy. The position of each infrared signal emitter 47 and the position of the lead screw motor 46 may be corresponded, so that the corresponding lead screw motor 46 can be adjusted by the corresponding infrared signal emitter 47.
A cleaning ring pipe 49 is arranged in the lifting groove 45 around the lifting device, a plurality of air holes are formed in the outer wall of the cleaning ring pipe 49, and the cleaning ring pipe 49 is connected with an external air supply device; the cleaning ring pipe 49 is arranged in the lifting groove 45 in a lifting way through the lifting rod 50; the top of the edge of the chuck 10 is provided with a cleaning air nozzle 51, and the cleaning air nozzle 51 is connected to an external air supply device.
When the wafer needs to be turned over, in the first step, the supporting plate 32 is jacked up by the lifting shaft 33, the supporting plate 32 moves upwards for a certain distance with the wafer, and meanwhile, the lifting sleeve 44 moves downwards by the screw motor 46 or the push rod motor; second, the shutter 30 is opened, so that the turning mechanical arm 6 extends from the protection cavity 28 into the main cavity 27, as shown in fig. 2; thirdly, clamping the wafer by a wafer clamp 8 on the turnover mechanical arm 6; fourth, the lifting shaft 33 drives the supporting plate 32 to descend, so that the wafer has enough space to turn over, as shown in fig. 3; fifth, in the process of turning over the wafer, the supporting plate 32 is lowered to be flush with the chuck 10 which has completed lowering, then inert gas is sprayed out through a cleaning air nozzle 51 at the edge of the chuck 10 to blow the surface of the supporting plate 32, so that residues at some positions are prevented from falling onto the surface of the supporting plate 32 in the process of turning over the wafer, and meanwhile, the gas is pumped out through the vacuumizing module 5; step six, after the wafer is turned over, the supporting plate 32 is lifted by the lifting shaft 33 to catch the wafer, and after the supporting plate 32 is lifted, the lifting rod 50 is started to drive the cleaning ring pipe 49 to lift up to spray inert gas to the inner wall of the chuck 10 for cleaning; seventh, after the chuck 10 is cleaned, the lifting rod 50 drives the cleaning ring pipe 49 to descend, meanwhile, the lifting sleeve 44 is driven by the screw motor 46 to move upwards, the overturning mechanical arm 6 is retracted to the protection cavity 28, and the gate 30 is closed; eighth, after the signal emitted by the infrared signal emitter 47 on the lifting sleeve 44 is received by the infrared signal receiver 48, the lifting sleeve 44 stops moving, and finally the supporting plate 32 is placed in the lifting hole 11 for etching.
Although the application has been described herein with reference to a number of illustrative embodiments thereof, it should be understood that numerous other modifications and embodiments can be devised by those skilled in the art that will fall within the scope and spirit of the principles of this disclosure. More specifically, various variations and modifications may be made to the component parts and/or arrangements of the subject combination arrangement within the scope of the disclosure, drawings and claims. In addition to variations and modifications in the component parts and/or arrangements, other uses will be apparent to those skilled in the art.
Claims (7)
1. The utility model provides a compound multi-functional plasma etching machine of physicochemical effect, includes etching machine body (1), be provided with reaction chamber (2) in etching machine body (1), be provided with air feed module (3), ionization module (4), evacuation module (5) and load-bearing module in reaction chamber (2), characterized in that still be provided with upset arm (6) in reaction chamber (2), the tip of upset arm (6) is connected with wafer holder (8) through first servo motor (7) rotation, load-bearing module includes cushion cap (9), the upside of cushion cap (9) is provided with chuck (10) that are used for placing the wafer, be provided with elevating gear that is used for the wafer jack-up in chuck (10) in cushion cap (9), the middle part of chuck (10) is provided with lifting hole (11);
the turnover mechanical arm (6) is arranged in the reaction cavity (2) through a guide rail (12), the guide rail (12) is vertically arranged on the cavity wall of the reaction cavity (2), the turnover mechanical arm (6) comprises a first folding arm (13) and a second folding arm (14), one end of the first folding arm (13) is connected with the guide rail (12) in an up-down sliding manner through a movable base (15), the side surface of the other end of the first folding arm is connected with the side surface of the second folding arm (14) in a rotating manner through a second servo motor (16), and the side surface of the other end of the second folding arm (14) is connected with the wafer holder (8) in a rotating manner through the first servo motor (7);
the guide rail (12) comprises a sliding plate (17) and a supporting bar (18) which are connected in a T shape, one side of the supporting bar (18) is connected with the cavity wall of the reaction cavity (2), the other side of the supporting bar is connected with the middle part of one side of the sliding plate (17), one side of the movable base (15) is provided with a sliding groove (19), and the other side of the movable base is connected with the first folding arm (13) through a third servo motor (20); when the movable base (15) is arranged on the guide rail (12), the sliding groove (19) is connected with the sliding plate (17) in an up-and-down sliding way; a driving hole (21) communicated with the bottom of the sliding groove (19) is formed in one side, far away from the sliding groove (19), of the moving base (15), a driving motor (22) is arranged at the position of the driving hole (21), a first gear (23) is sleeved on an output shaft of the driving motor (22), a rack (24) matched with the first gear (23) is vertically arranged on one side, facing the bottom of the sliding groove (19), of the sliding plate (17), and one side of the first gear (23) penetrates into the sliding groove (19) through the driving hole (21) to be meshed with the rack (24); the groove wall of the sliding groove (19) is connected with a rotating wheel (26) on one side of the sliding plate (17) connected with the supporting bar (18) through a rotating rod (25), and the outer wall of the rotating wheel (26) is in rolling fit with the sliding plate (17);
the reaction chamber (2) is internally divided into a main chamber (27) and a protection chamber (28) through a partition plate, the air supply module (3) and the vacuum pumping module (5) are arranged in the main chamber (27), the overturning mechanical arm (6) is arranged in the protection chamber (28), an operation port (29) penetrating through the main chamber (27) and the protection chamber (28) is arranged on the partition plate, a gate (30) for controlling the on-off of the operation port (29) is arranged in the partition plate, and when a wafer needs to be overturned, the overturning mechanical arm (6) drives the wafer holder (8) to extend into the main chamber (27) from the operation port (29).
2. The multifunctional plasma etcher of claim 1, wherein: the lifting device comprises a lifting motor (31) and a supporting disc (32), the lifting motor (31) is installed in the bearing platform (9), a lifting shaft (33) of the lifting motor (31) is arranged upwards, the lower side of the supporting disc (32) is connected with an output shaft of the lifting motor (31), and the supporting disc (32) upwards penetrates through the lifting hole (11) through the lifting motor (31) to jack up a wafer.
3. The multifunctional plasma etcher of claim 1, wherein: the wafer holder (8) comprises a connecting part (35), a fourth servo motor (36), a holding plate (37), a fifth servo motor (38) and two clamping arms (39), wherein the side surfaces of the connecting part (35) are rotationally connected with the side surfaces of the second folding arms (14) through the first servo motor (7), the fourth servo motor (36) is arranged at the lower side of the connecting part (35), the output shaft of the fourth servo motor (36) is connected with the side surfaces of the holding plate (37), the holding plate (37) is provided with a rotating hole (40) penetrating through the upper side and the lower side, the fifth servo motor (38) is mounted at the lower side of the holding plate (37), the output shaft of the fifth servo motor (38) penetrates through the rotating hole (40) from the lower side of the rotating hole (40), a second gear (41) is sleeved above the rotating hole (40), the upper side of the holding plate (37) is provided with a third gear (42) and a fourth gear (42) which are meshed with the third gear (42) through two rotating shaft sleeves, and the third gear (43) and the fourth gear (42) are meshed with the fourth gear (42), the two clamping arms (39) are respectively connected with a third gear (42) and a fourth gear (43).
4. A physicochemical effect composite multifunctional plasma etcher as in claim 3, wherein: clamping blocks (52) are arranged on opposite sides of the two clamping arms (39), clamping grooves (53) are arranged on opposite sides of the two clamping blocks (52), and a first film pressure sensor is arranged between the clamping blocks (52) and the clamping arms (39); the protection cavity is characterized in that mounting columns (54) are arranged on the cavity wall of the protection cavity (28), fixing columns (55) are arranged on two opposite sides of each mounting column (54), pressure grooves (56) are formed in two ends, far away from each mounting column (54), of each fixing column (55), sliding columns (57) are arranged in the pressure grooves (56) in a sliding mode, a second film pressure sensor (58) is arranged between the sliding columns (57) and the bottoms of the pressure grooves (56), and one ends, far away from the bottoms of the pressure grooves (56), of the sliding columns (57) extend out of the bottoms of the pressure grooves (56) and are connected with arc-shaped rods (59).
5. The multifunctional plasma etcher of claim 1, wherein: the bearing platform (9) is installed through a lifting sleeve (44) the chuck (10), the middle part of the bearing platform (9) is concavely provided with a lifting groove (45) aligned with the lifting hole (11), the lifting device is installed in the lifting groove (45), the lifting sleeve (44) is sleeved on the outer wall of the bearing platform (9) in a sliding mode, and the chuck (10) is installed at the upper end of the lifting sleeve (44).
6. The multifunctional plasma etcher of claim 5, wherein: the lifting sleeve (44) is arranged on the outer wall of the bearing platform (9) in a vertical sliding way through a screw motor (46) or a push rod motor; an infrared signal emitter (47) is arranged on the outer wall of the lifting sleeve (44), and an infrared signal receiver (48) corresponding to the infrared signal emitter (47) is arranged on the inner wall of the reaction cavity (2); the infrared signal emitter (47) and the infrared signal receiver (48) are arranged in a plurality of.
7. The multifunctional plasma etcher of claim 5, wherein: a cleaning ring pipe (49) is arranged in the lifting groove (45) around the lifting device, a plurality of air holes are formed in the outer wall of the cleaning ring pipe (49), and the cleaning ring pipe (49) is connected with an external air supply device; the cleaning ring pipe (49) is arranged in the lifting groove (45) in a lifting way through a lifting rod (50); the top of the edge of the chuck (10) is provided with a cleaning air nozzle (51), and the cleaning air nozzle (51) is connected with an external air supply device.
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