CN114937628A - Wafer etching device and etching method - Google Patents
Wafer etching device and etching method Download PDFInfo
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- CN114937628A CN114937628A CN202210862673.2A CN202210862673A CN114937628A CN 114937628 A CN114937628 A CN 114937628A CN 202210862673 A CN202210862673 A CN 202210862673A CN 114937628 A CN114937628 A CN 114937628A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67766—Mechanical parts of transfer devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a wafer etching device and an etching method, wherein the wafer etching device comprises: transferring the frame; the lifting mechanism comprises a group of symmetrically arranged lifting components, each lifting component comprises a motor, a turnover plate and a first conveying component, two ends of the turnover plate are respectively arranged on the etching pool through a first supporting plate and a second supporting plate, an output shaft of the motor penetrates through the first supporting plate and then is connected with one end of the turnover plate, an arc-shaped groove is formed in the second supporting plate, a guide column is arranged on the outer wall of the other end of the turnover plate and is in sliding fit with the arc-shaped groove, the first conveying component is arranged on the inner side of the turnover plate, and a plurality of groups of limiting components are arranged on the first conveying component and are used for matching with the transfer frame; the layering mechanism is used for receiving the transfer frames from the lifting mechanism and placing the transfer frames in a layering manner; and the spraying system is used for spraying etching liquid to the wafer at the layering mechanism. The spraying etching can be simultaneously carried out on the multilayer wafer, and the etching efficiency of the wafer groove is improved.
Description
Technical Field
The invention relates to the technical field of wafer processing, in particular to a wafer etching device and an etching method.
Background
The processing of the wafer generally includes processes such as glue coating, exposure, development, trench etching, electrophoresis, etc., and the trench etching is intended to react silicon in a specific region of the wafer surface with an etching solution to form a trench. In the prior art, the method for etching the groove is to inject etching solution into an etching tank, array a row of wafers to be etched in a basket, soak the basket in the etching tank, and finish etching after a period of time. This method has some problems, such as the relatively weak mobility of the etching solution in the etching tank, which results in the gradually weakened etching capability of the etching solution at the periphery of the wafer; during operation, only one layer of storage basket, even one storage basket is soaked in the etching tank, so that the corrosion efficiency is low.
Disclosure of Invention
In order to solve the defects of the prior art, the invention provides a wafer etching device and an etching method, which change immersion etching into spray etching and can simultaneously carry out spray etching on a plurality of layers of wafers so as to improve the etching efficiency of wafer grooves.
In order to realize the purpose of the invention, the following scheme is adopted:
a wafer etching apparatus, comprising:
the transfer frame comprises a horizontal rod and a storage basket, wherein assembly blocks are arranged at two ends of the horizontal rod, the assembly blocks are provided with assembly grooves in a penetrating mode, the storage basket is connected to the horizontal rod through a T-shaped rod, and the storage basket is used for placing wafers to be etched;
the lifting mechanism comprises a group of symmetrically arranged lifting components, each lifting component comprises a motor, a turnover plate and a first conveying component, two ends of the turnover plate are respectively arranged on the etching pool through a first supporting plate and a second supporting plate, a motor output shaft penetrates through the first supporting plate and then is connected with one end of the turnover plate, an arc-shaped groove is formed in the second supporting plate, a guide post is arranged on the outer wall of the other end of the turnover plate and is in sliding fit with the arc-shaped groove, the first conveying component is arranged on the inner side of the turnover plate, a plurality of groups of limiting components are arranged on the first conveying component, a plurality of limiting posts with different inclination angles are arranged in each group, two limiting posts at the same position of one group of lifting components are the same in inclination angle and are used for assembling the same transfer frame, and the limiting posts are matched with the assembling grooves;
the layering mechanism comprises symmetrically arranged layering plates, the layering plates are arranged at the tops of the etching pools, a plurality of layers of slideways are arranged on the inner walls of the layering plates, when the turnover plates are driven by the motor to the corresponding slideways, one limiting column of each group of limiting assemblies is in a vertical state, the layering mechanism is used for bearing a transfer frame from the lifting mechanism, and the slideways are used for matching with the assembly blocks;
and the spraying system is arranged on the layering plate and is used for spraying etching liquid to the wafer at the layering mechanism.
Further, the transfer frame further comprises a handle, an assembly platform is arranged in the middle of the horizontal rod, a through groove is formed in the middle of the assembly platform, the horizontal rod is divided into two parts by the through groove, the handle is arranged at the top of the horizontal rod, the disconnected horizontal rod is connected together, a vacuum adsorption hole is formed in the top of the assembly platform, the horizontal part of the T-shaped rod is connected to the assembly platform through vacuum adsorption, and the vertical part of the T-shaped rod is located at the through groove.
Furthermore, lead to the width that the length of groove edge horizontal pole is greater than the vertical portion of T type pole, the horizontal part bottom symmetry of T type pole is equipped with two spacing grooves.
Further, the layering mechanism still includes multilayer second conveyor components, each layer of second conveyor components includes the transport platform that two symmetries set up, carry the platform lateral wall to connect in the layering board through a plurality of bracing pieces, the one deck slide corresponds one deck second conveyor components, when shifting the frame and being located layering mechanism department, one of them layer slide of assembly piece matching, T type pole matches in the second conveyor components top that corresponds, and two transport platforms are located the spacing inslot that corresponds, the vertical position of T type pole is between two transport platforms.
Furthermore, a three-layer slide way and a three-layer second conveying assembly are arranged, three limit columns with different inclination angles are arranged in each group of limit assemblies, a transfer frame assembled by a first limit column corresponds to the highest-layer slide way, and a transfer frame assembled by a third limit column corresponds to the lowest-layer slide way.
Furthermore, the other end of the turnover plate is an arc-shaped edge, the arc-shaped edge is rotationally matched with the end part of the layered plate, a transition block is further arranged on the inner wall of the turnover plate and located between the first conveying assembly and the layered plate, the outer edge of the transition block is also rotationally matched with the end part of the layered plate, a channel is arranged on the transition block, and when the first conveying assembly works, the size of the channel is determined according to the fact that the limiting column is allowed to pass through.
Further, the top surface and/or the bottom surface of the assembling block is a horizontal surface.
A wafer etching method adopting the wafer etching device comprises the following steps:
s1, conveying the first batch of transfer frames to a lowest-layer slide way;
s11, driving the turnover plate to the lowest layer of slide way by a motor;
s12, the first conveying assembly conveys each group of limiting assemblies to the first supporting plate, and the transfer frame with the wafer is placed on one corresponding limiting column;
s13, when the transfer frames are sequentially conveyed to the other end of the turnover plate, the transfer frames are moved to the corresponding slide ways by the aid of the mechanical arms, meanwhile, the T-shaped rods are matched with the corresponding second conveying assemblies, and then the transfer frames are conveyed to the interior of the layering mechanism for a preset distance by the second conveying assemblies;
s2, driving the turnover plate to the (N + 1) th layer of slide way by a motor, wherein N is a positive integer;
s21, repeats S12 and S13;
s3, starting to spray the etching solution by using a spraying system;
s31, stopping adsorption of the vacuum adsorption holes of all the assembly platforms, and removing all the horizontal rods to leave T-shaped rods;
s32, starting to spray the etching solution by using a spraying system;
and S4, after the spraying is finished, the T-shaped rods in the layering mechanism are conveyed out by the second conveying assembly.
The invention has the beneficial effects that:
1. the turnover plate can be rotated by a motor, so that the first conveying assembly is connected with one of the slide ways, and the first conveying assembly is used for conveying the multiple batches of transfer frames to the slide ways on the corresponding layers respectively, so that wafers on the multiple layers of transfer frames can be etched simultaneously; and the spraying system is utilized to spray the etching solution to the wafer, so that the fluidity of the etching solution is stronger, and the etching effect of the etching solution contacted with the wafer can be ensured to be stronger.
2. The transfer frame is not a simple storage basket and comprises two detachable parts, wherein one part is a horizontal rod matched with the limiting column or the sliding chute and assembling blocks at two ends of the horizontal rod, and the other part is a T-shaped rod matched with the second conveying assembly and a storage basket connected with the T-shaped rod; when the two parts are assembled together through vacuum adsorption, the two parts are conveniently conveyed to the layering mechanism from the lifting mechanism; when the two parts are separated, the horizontal rod is convenient to move away for the next round of use, and meanwhile, the T-shaped rod is left on the second conveying assembly to wait for spraying of the etching solution.
3. Assuming that three layers of slideways and three layers of second conveying assemblies are arranged in total, and three limiting columns with different inclination angles are arranged in each group of limiting assemblies, when the motor drives the turnover plate to reach the highest layer of slideways, the first limiting column is in a vertical state; when motor drive returning face plate to the lowest layer slide, the third spacing post is in vertical state, that is to say, when motor drive returning face plate to the slide that corresponds, one of them spacing post of every group of spacing subassembly is in vertical state, can guarantee like this to shift the frame and can install on spacing post, and remain vertical throughout.
Drawings
FIG. 1 is a diagram illustrating a structure of a wafer etching apparatus according to an embodiment;
FIG. 2 is an enlarged view of a portion of FIG. 1 at A;
FIG. 3 is an enlarged view of a portion of FIG. 1 at B;
FIG. 4 is a diagram of a transition block structure of an embodiment;
FIG. 5 is a horizontal bar structure view of the embodiment;
FIG. 6 is a plan view of the T-bar of the embodiment;
FIG. 7 is a plan view of a first transport assembly of the embodiment;
FIG. 8 is a block diagram of a lift mechanism of an embodiment with a transfer frame positioned;
FIG. 9 is a block diagram of a multi-layer transfer frame disposed within a layering mechanism of an embodiment;
FIG. 10 is a side view of the layered mechanism of the embodiment;
FIG. 11 is a side view of a multi-layer transfer frame disposed within a layering mechanism of an embodiment;
FIG. 12 is a side view of a layered mechanism of an embodiment having multiple layers of T-bars disposed therein;
FIG. 13 is a flowchart of a wafer etching method according to an embodiment;
reference numerals: the device comprises a lifting mechanism-1, a motor-11, a turnover plate-12, a guide column-121, an arc-shaped edge-122, a first conveying component-13, a limiting component-131, a limiting column-1311, a first supporting plate-15, a second supporting plate-16, an arc-shaped groove-161, a transition block-17, a channel-171, a layering mechanism-2, a layering plate-21, a slide-211, a second conveying component-22, a conveying table-221, a transfer frame-3, a horizontal rod-31, an assembly platform-311, a through groove-312, a handle-32, a storage basket-33, an assembly block-34, an assembly groove-341, a T-shaped rod-35, a limiting groove-351 and an etching pool-4.
Detailed Description
Example 1
As shown in fig. 1 and 4, the present embodiment provides a wafer etching apparatus, which includes a transfer frame 3, a lifting mechanism 1, a layering mechanism 2, and a spraying system.
Specifically, the transfer frame 3 comprises a horizontal rod 31 and two storage baskets 33, two ends of the horizontal rod 31 are respectively provided with an assembly block 34, the assembly block 34 is provided with an assembly groove 341, the assembly groove 341 vertically penetrates through the assembly block 34, the two storage baskets 33 are arranged in parallel and connected to the horizontal rod 31 through a T-shaped rod 35, and a row of wafer slots for placing wafers to be etched are arranged in each storage basket 33.
Note that: the transfer frame 3 may also be provided with only one storage basket 33, and the two storage baskets 33 are provided in this embodiment to increase the storage capacity of the wafers; in addition, the storage basket 33 is a grid structure or has a plurality of liquid through holes, so that the etching liquid can flow downwards when spraying, and the grid structure or the through holes are not shown in the drawing in detail.
Concretely, hoist mechanism 1, 4 tops in etching pond are located in proper order to layering mechanism 2, hoist mechanism 1 is including a set of hoisting component that the symmetry set up, every hoisting component includes motor 11, returning face plate 12, first conveyor components 13, first backup pad 15 is installed at 4 tops in etching pond, second backup pad 16, motor 11 is located the 16 outsides of second backup pad, motor 11 output shaft runs through and connects returning face plate 12 one end behind the first backup pad 15, as shown in fig. 3, be equipped with arc 161 in the second backup pad 16, the 12 other end outer walls of returning face plate are equipped with guide post 121, when motor 11 drive returning face plate 12, guide post 121 sliding fit in arc 161. The first conveying component 13 is disposed inside the turnover plate 12, as shown in fig. 7 and 8, a plurality of sets of limiting components 131 are disposed on the first conveying component 13, each set is provided with a plurality of limiting columns 1311 with different inclination angles, two limiting columns 1311 at the same position of a set of lifting components are a set of limiting columns 1311, the inclination angles of the set of limiting columns 1311 are the same, the set of limiting columns 1311 are used for assembling the same transfer frame 3, and the limiting columns 1311 are matched with the assembling grooves 341.
When in use, one transfer frame 3 is placed on the corresponding group of limiting columns 1311, namely the limiting columns 1311 are inserted into the assembling grooves 341 in a matching mode; the transfer frame 3 can be transported to a predetermined position by the first transport assembly 13.
Specifically, the layering mechanism 2 comprises symmetrically arranged layering plates 21, the symmetry axes of the two layering plates 21 and the symmetry axes of the two turnover plates 12 are on the same straight line, the layering plates 21 are arranged at the top of the etching pool 4, a plurality of layers of slide rails 211 are arranged on the inner walls of the layering plates 21, when the motor 11 drives the turnover plates 12 to the corresponding slide rails 211, one limiting column 1311 of each group of limiting component 131 is in a vertical state, the layering mechanism 2 is used for receiving the transfer frame 3 from the lifting mechanism 1, and the slide rails 211 are used for matching with the assembling blocks 34.
Specifically, the spraying system is used for spraying the etching solution to the wafer at the layering mechanism 2, the spraying system belongs to the conventional technology, and is not specifically shown in the drawings, and the spraying system can be disposed on a suitable position of the layering plate 21 so as to spray the etching solution to each layer of the transfer frame 3.
In the above technical solution, when in use, the motor 11 drives the turnover plate 12 to one of the slideways 211; the first conveying assembly 13 conveys each group of limiting assemblies 131 to the first supporting plate 15, and manually or by using other clamping and transferring devices, the transferring frame 3 with the wafers is placed on the corresponding one of the limiting columns 1311; the first conveying assembly 13 conveys the transfer frame 3 to the other end of the turnover plate 12 in sequence, the mechanical arm is used for moving the transfer frame 3 to the slide 211 on the layer, the mechanical arm firstly moves the transfer frame 3 on the first conveying assembly 13 upwards to enable the assembly block 34 to be separated from the limiting column 1311, then the transfer frame 3 is moved towards the slide 211, and the assembly block 34 is matched into the slide 211.
More specifically, in order to increase the structural stability of the present embodiment, as shown in fig. 7, the end of the turning plate 12 contacting the layered plate 21 is an arc-shaped edge 122, and the arc-shaped edge 122 is rotatably fitted to the end of the layered plate 21, as shown in fig. 2, the inner wall of the turning plate 12 is further provided with a transition block 17, the transition block 17 is located between the first conveying assembly 13 and the layered plate 21, and the outer edge of the transition block 17 is also rotatably fitted to the end of the layered plate 21, the transition block 17 is provided with a channel 171, and when the first conveying assembly 13 is in operation, the channel 171 is sized to allow the position-limiting column 1311 to pass through.
More specifically, as shown in fig. 5, the transfer frame 3 further includes a handle 32, an assembly platform 311 is disposed in the middle of the horizontal rod 31, a through groove 312 is disposed in the middle of the assembly platform 311, the horizontal rod 31 is divided into two parts by the through groove 312, the handle 32 is disposed on the top of the horizontal rod 31 to connect the disconnected horizontal rods 31 together, a vacuum suction hole is disposed on the top of the assembly platform 311, the horizontal portion of the T-shaped rod 35 is connected to the assembly platform 311 through vacuum suction, and the vertical portion of the T-shaped rod 35 is located at the through groove 312. As shown in fig. 6, the length of the through groove 312 along the horizontal rod 31 is greater than the size of the vertical part of the T-shaped rod 35, and two limiting grooves 351 are symmetrically arranged at the bottom of the horizontal part of the T-shaped rod 35, and it is noted that the two limiting grooves 351 are completely exposed to the outside and are not shielded by the horizontal rod 31.
More specifically, as shown in fig. 10, the layering mechanism 2 further includes multiple layers of second conveying assemblies 22, each layer of second conveying assembly 22 includes two conveying tables 221 symmetrically arranged, the outer side walls of the conveying tables 221 are connected to the layering plate 21 through multiple support rods, one layer of slide rails 211 corresponds to one layer of second conveying assemblies 22, as shown in fig. 11, when the transfer frame 3 is located at the layering mechanism 2, the assembling blocks 34 match with one of the layer of slide rails 211, the T-shaped rods 35 match with the tops of the corresponding second conveying assemblies 22, the two conveying tables 221 are located in the corresponding limiting grooves 351, and the vertical portions of the T-shaped rods 35 are located between the two conveying tables 221.
More specifically, to facilitate mating of the mounting block 34 with the slide 211, the top and/or bottom surfaces of the mounting block 34 are horizontal.
In the above technical solution, when in use, when the transfer frame 3 is moved to the slide 211 of the corresponding layer by the mechanical arm, the mechanical arm is moved away, and the second conveying assembly 22 conveys the transfer frame 3 into the layering mechanism 2 for a certain distance, so as to make a space for the next transfer frame 3; after all the transfer frames 3 are transferred into the layer building 2, the vacuum suction holes of all the mounting platforms 311 are stopped, that is, the horizontal bars 31 and the T-bars 35 can be disengaged, at which point all the horizontal bars 31 are removed, leaving the T-bars 35 and the storage baskets 33 thereon, as shown in fig. 12. The mode of evacuating the horizontal rods 31 first and leaving the T-shaped rods 35 for spraying is beneficial to maximizing the effect of the horizontal rods 31 and putting the horizontal rods 31 into the next round for use as soon as possible.
It should be noted that there are various ways to remove the horizontal rod 31, and the first way is: manually holding the long rod, wherein the long rod is provided with a barb which can hook the handle 32, gathering all the horizontal rods 31 of each layer together, and then pulling the horizontal rods 31 to the outlet along the direction of the slideway 211; the second way is: a conveyor belt can be arranged on each layer of slide way 211, when the vacuum adsorption holes of the assembling platform 311 stop adsorbing, the horizontal rod 31 can be conveyed to the outlet by the conveyor belt of the slide way 211, that is, when the horizontal rod 31 and the T-shaped rod 35 are integrated, the second conveying assembly 22 is responsible for conveying the horizontal rod 31 and the T-shaped rod 35 to a preset position simultaneously, when the horizontal rod 31 and the T-shaped rod 35 are independent, the conveyor belt of the slide way 211 is responsible for conveying the horizontal rod 31 out, and the T-shaped rod 35 stays in the second conveying assembly 22 to wait for spraying; after the spraying is finished, the second conveying assembly 22 is responsible for conveying the T-shaped rods 35 out; in addition, the top surface and/or the bottom surface of the assembling block 34 is a horizontal surface, so that the assembling block 34 and the horizontal rod 31 can be conveniently conveyed out by using a conveying belt of the slide way 211.
More specifically, three layers of slideways 211 and three layers of second conveying assemblies 22 are provided, three limiting columns 1311 with different inclination angles are provided in each group of limiting assemblies 131, in fig. 7, only six groups of limiting assemblies 131 are shown, and the limiting assemblies 131 at the rest positions of the first conveying assembly 13 are not shown, in practical application, a proper number of limiting assemblies 131 can be provided according to requirements, the transfer frame 3 assembled by the first limiting column 1311 corresponds to the highest-layer slideway 211, the transfer frame 3 assembled by the third limiting column 1311 corresponds to the lowest-layer slideway 211, that is, when the motor 11 drives the turnover plate 12 to the highest-layer slideway 211, the first limiting column 1311 is in a vertical state; when the motor 11 drives the turnover plate 12 to the lowest layer of the slide way 211, the third limiting column 1311 is in a vertical state.
Example 2
The present embodiment provides a wafer etching method, which uses the wafer etching apparatus of embodiment 1, and as shown in fig. 13, the method includes the following steps:
s1, conveying the first batch of transfer frames 3 to the lowest layer slide way 211;
s11, driving the turnover plate 12 to the lowest layer slide way 211 by the motor 11;
s12, the first conveying component 13 conveys each group of limiting components 131 to the first supporting plate 15, and the first batch of transfer frames 3 with wafers are sequentially placed on the third limiting columns 1311;
s13, when the transfer frames 3 are sequentially conveyed to the other end of the turnover plate 12, the transfer frames 3 are moved to the lowest layer of the slide way 211 by the mechanical arm, meanwhile, the T-shaped rod 35 is matched with the second conveying assembly 22 at the lowest layer, and then the second conveying assembly 22 conveys the transfer frames 3 to the inside of the layering mechanism 2 for a preset distance until all the first batch of transfer frames 3 are conveyed to the lowest layer of the slide way 211.
S2, driving the turnover plate 12 to the middle layer slide way 211 by the motor 11;
the first conveying component 13 conveys each group of limiting components 131 to the first supporting plate 15, and the second batch of transfer frames 3 with the wafers are sequentially placed on the second limiting columns 1311;
when the transfer frames 3 are sequentially conveyed to the other end of the turnover plate 12, the transfer frames 3 are moved to the middle layer slide way 211 by using the mechanical arm, meanwhile, the T-shaped rod 35 is matched with the middle layer second conveying assembly 22, and then the second conveying assembly 22 conveys the transfer frames 3 to the interior of the layering mechanism 2 for a preset distance until all the second batch of transfer frames 3 are transferred to the middle layer slide way 211;
the motor 11 drives the turnover plate 12 to the highest layer slideway 211;
as shown in fig. 8, the first conveying assembly 13 conveys each group of the limiting assemblies 131 to the first supporting plate 15, and sequentially places the third batch of the transfer frames 3 with the wafers on the first limiting posts 1311;
when the transfer frames 3 are sequentially conveyed to the other end of the turnover plate 12, the transfer frames 3 are moved to the highest-layer slide 211 by the mechanical arm, meanwhile, the T-shaped rod 35 is matched with the highest-layer second conveying assembly 22, and then the second conveying assembly 22 conveys the transfer frames 3 to the inside of the layering mechanism 2 for a preset distance until all the third batch of transfer frames 3 are conveyed to the highest-layer slide 211, as shown in fig. 9.
S3, starting to spray the etching solution by using a spraying system, specifically:
s31, in the layering mechanism 2, stopping adsorption of the vacuum adsorption holes of all the assembling platforms 311, and manually removing all the horizontal rods 31 by using long rods to leave T-shaped rods 35;
and S32, starting to spray the etching solution by using the spraying system.
And S4, after the spraying is finished, the T-shaped rod 35 in the layering mechanism 2 is conveyed out by the second conveying assembly 22.
In summary, in this embodiment, the lifting mechanism 1 is used to transport the three batches of transfer frames 3 to the three-layer slide 211 through the cooperation of the lifting mechanism 1 and the layering mechanism 2, so that the wafers on the multiple layers of transfer frames 3 can be etched at the same time; the spraying system is used for spraying the etching solution to the wafer, and the fluidity of the etching solution is strong, so that the etching effect of the etching solution contacted with the wafer is strong; in addition, in this embodiment, after the etching process is completed, the second transfer module 22 can be used to transfer all the wafers to the clean water spraying system for clean water spraying.
The above embodiments are only for illustrating the technical ideas and features of the present invention, and are not meant to be exclusive or limiting of the present invention. It will be understood by those skilled in the art that various changes may be made and equivalents may be substituted without departing from the scope of the invention.
Claims (10)
1. A wafer etching apparatus, comprising:
the transfer frame (3) comprises a horizontal rod (31) and a storage basket (33), wherein assembly blocks (34) are arranged at two ends of the horizontal rod (31), assembly grooves (341) are formed in the assembly blocks (34) in a penetrating mode, the storage basket (33) is connected to the horizontal rod (31) through a T-shaped rod (35), and the storage basket (33) is used for placing wafers to be etched;
the lifting mechanism (1) comprises a group of symmetrically arranged lifting components, each lifting component comprises a motor (11), a turnover plate (12) and a first conveying component (13), two ends of the turnover plate (12) are respectively installed on an etching pool (4) through a first supporting plate (15) and a second supporting plate (16), an output shaft of the motor (11) penetrates through the first supporting plate (15) and then is connected with one end of the turnover plate (12), an arc-shaped groove (161) is formed in the second supporting plate (16), a guide column (121) is arranged on the outer wall of the other end of the turnover plate (12), the guide column (121) is in sliding fit with the arc-shaped groove (161), the first conveying component (13) is arranged on the inner side of the turnover plate (12), a plurality of groups of limiting components (131) are arranged on the first conveying component (13), a plurality of limiting columns (1311) with different inclination angles are arranged in each group, and two limiting columns (1311) at the same position of one group of the lifting components are arranged, the inclined angles are the same, the inclined angles are used for assembling the same transfer frame (3), and the limiting columns (1311) are matched with the assembling grooves (341);
the layering mechanism (2) comprises symmetrically arranged layering plates (21), the layering plates (21) are arranged at the top of the etching pool (4), a plurality of layers of slide ways (211) are arranged on the inner wall of the layering plates (21), when the motor (11) drives the turnover plate (12) to the corresponding slide way (211), one limiting column (1311) of each group of limiting assemblies (131) is in a vertical state, the layering mechanism (2) is used for bearing the transfer frame (3) from the lifting mechanism (1), and the slide way (211) is used for matching with the assembling block (34);
and the spraying system is arranged on the layering plate (21) and is used for spraying the etching solution to the wafer at the layering mechanism (2).
2. The wafer etching apparatus according to claim 1, wherein the transfer frame (3) further comprises a handle (32), an assembly platform (311) is disposed in the middle of the horizontal rod (31), a through groove (312) is disposed in the middle of the assembly platform (311), the horizontal rod (31) is divided into two by the through groove (312), the handle (32) is disposed on the top of the horizontal rod (31) and connects the disconnected horizontal rods (31) together, a vacuum suction hole is disposed on the top of the assembly platform (311), the horizontal portion of the T-shaped rod (35) is connected to the assembly platform (311) by vacuum suction, and the vertical portion of the T-shaped rod (35) is located at the through groove (312).
3. The wafer etching device according to claim 2, wherein the through groove (312) has a length along the horizontal rod (31) greater than a width of the vertical portion of the T-shaped rod (35), and two limiting grooves (351) are symmetrically formed at the bottom of the horizontal portion of the T-shaped rod (35).
4. The wafer etching device according to claim 3, wherein the layering mechanism (2) further comprises a plurality of layers of second conveying assemblies (22), each layer of second conveying assembly (22) comprises two symmetrically arranged conveying tables (221), the outer side walls of the conveying tables (221) are connected to the layering plate (21) through a plurality of supporting rods, one layer of slide ways (211) corresponds to one layer of second conveying assemblies (22), when the transfer frame (3) is located at the layering mechanism (2), the assembling blocks (34) are matched with one layer of slide ways (211), the T-shaped rods (35) are matched with the tops of the corresponding second conveying assemblies (22), the two conveying tables (221) are located in corresponding limiting grooves (351), and the vertical portions of the T-shaped rods (35) are located between the two conveying tables (221).
5. The wafer etching device according to claim 4, wherein three layers of slide ways (211) and three layers of second conveying assemblies (22) are provided, three limiting columns (1311) with different inclination angles are provided in each group of limiting assemblies (131), the transfer frame (3) assembled by the first limiting column (1311) corresponds to the highest layer slide way (211), and the transfer frame (3) assembled by the third limiting column (1311) corresponds to the lowest layer slide way (211).
6. The wafer etching device according to claim 5, wherein the other end of the turnover plate (12) is an arc-shaped edge (122), the arc-shaped edge (122) is rotatably fitted to the end of the layered plate (21), a transition block (17) is further disposed on the inner wall of the turnover plate (12), the transition block (17) is located between the first conveying assembly (13) and the layered plate (21), the outer edge of the transition block (17) is also rotatably fitted to the end of the layered plate (21), a channel (171) is disposed on the transition block (17), and when the first conveying assembly (13) operates, the channel (171) is sized to allow the limiting column (1311) to pass through.
7. Wafer etching apparatus according to claim 1, characterized in that the top and/or bottom surface of the fitting block (34) is a horizontal surface.
8. A wafer etching method using the wafer etching apparatus as claimed in any one of claims 4 to 7, comprising the steps of:
s1, conveying the first batch of transfer frames (3) to the lowest layer slide way (211);
s11, driving the turnover plate (12) to the lowest layer slide way (211) by the motor (11);
s12, the first conveying component (13) conveys each group of limiting components (131) to the first supporting plate (15), and the transfer frame (3) with the wafer is placed on one corresponding limiting column (1311);
s13, when the transfer frame (3) is sequentially conveyed to the other end of the turnover plate (12), the transfer frame (3) is moved to the corresponding slide way (211) by using a mechanical arm, meanwhile, the T-shaped rod (35) is matched with the corresponding second conveying assembly (22), and then the second conveying assembly (22) conveys the transfer frame (3) to the interior of the layering mechanism (2) for a preset distance;
s2, driving the turnover plate (12) to the (N + 1) th layer of slide way (211) by a motor (11), wherein N is a positive integer;
s21, repeats S12 and S13;
and S3, starting to spray the etching solution by using the spraying system.
9. The wafer etching method of claim 8, wherein the step S3 is:
s31, stopping the adsorption of the vacuum adsorption holes of all the assembling platforms (311), and removing all the horizontal rods (31) to leave the T-shaped rods (35);
and S32, starting to spray the etching solution by using the spraying system.
10. The wafer etching method as set forth in claim 9, wherein the T-bar (35) in the layering mechanism (2) is transported out by the second transport assembly (22) after the spraying is finished at S4.
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