CN117116812A - Trench gate etching device and etching method - Google Patents
Trench gate etching device and etching method Download PDFInfo
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- CN117116812A CN117116812A CN202311347080.3A CN202311347080A CN117116812A CN 117116812 A CN117116812 A CN 117116812A CN 202311347080 A CN202311347080 A CN 202311347080A CN 117116812 A CN117116812 A CN 117116812A
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- spraying
- trench gate
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- 238000005530 etching Methods 0.000 title claims abstract description 122
- 238000000034 method Methods 0.000 title claims abstract description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 61
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 61
- 239000010703 silicon Substances 0.000 claims abstract description 61
- 238000005507 spraying Methods 0.000 claims abstract description 54
- 239000007788 liquid Substances 0.000 claims abstract description 19
- 239000007921 spray Substances 0.000 claims abstract description 12
- 238000001179 sorption measurement Methods 0.000 claims abstract description 10
- 235000012431 wafers Nutrition 0.000 claims description 61
- 230000000712 assembly Effects 0.000 claims description 14
- 238000000429 assembly Methods 0.000 claims description 14
- 238000003860 storage Methods 0.000 claims description 8
- 230000000149 penetrating effect Effects 0.000 claims description 7
- 239000000428 dust Substances 0.000 claims description 3
- 239000003292 glue Substances 0.000 claims description 3
- 238000007654 immersion Methods 0.000 abstract description 2
- 238000009434 installation Methods 0.000 description 9
- 238000001962 electrophoresis Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 238000002791 soaking Methods 0.000 description 3
- 238000005452 bending Methods 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a trench gate etching device and an etching method, wherein the trench gate etching device comprises two conveying components, a plurality of groups of positioning components, an object placing component and a spraying component, wherein the two conveying components are symmetrically arranged, and a space is reserved between the two conveying components; the plurality of groups of positioning components are arranged on the conveying components along the conveying direction of the conveying components, each group of positioning components comprises two positioning components, and the two positioning components are coaxially arranged on the two conveying components respectively; the object is used for placing the silicon wafer, the object is positioned between the two conveying components, two side ends of the object can be respectively adsorbed with the two positioning components in the same group, when the side end of the object is arranged on the positioning piece, the end part of the positioning piece extends and is inserted into the side end of the object under the influence of the adsorption of the side end of the object; the spraying piece is positioned above the conveying component and is used for spraying etching liquid onto the silicon wafer placed in the placement object. The traditional immersion etching is changed into spray etching, so that the fluidity of etching liquid on the surface of the silicon wafer is enhanced, and the etching efficiency of the trench gate is effectively improved.
Description
Technical Field
The invention relates to the field of wafer processing, in particular to a trench gate etching device and a trench gate etching method.
Background
Silicon wafers used for manufacturing silicon semiconductor integrated circuits are also called wafers because they have a circular shape. Processing of wafers generally includes processes such as gumming, exposure, development, trench etching, electrophoresis, and the like, with the purpose of reacting silicon in specific areas of the wafer surface with an etchant to form trenches.
At present, the trench gate is corroded or etched by physical etching and chemical etching, for example, chemical etching is performed by injecting etching solution into an etching pool, arranging a row of wafer arrays to be etched in a basket, immersing the basket in the etching pool, and completing etching after a period of time. However, the etching liquid in the etching pool has weaker flowability, so that the etching capability of the etching liquid on the periphery of the crystal is relatively lower, and the etching progress of the trench gate is slower.
Disclosure of Invention
Based on this, it is necessary to provide a trench gate etching apparatus and an etching method, which change the conventional immersion etching into spray etching, so as to enhance the fluidity of the etching solution on the surface of the silicon wafer and effectively improve the etching efficiency of the trench gate.
The invention provides a trench gate etching device, comprising:
the two conveying assemblies are symmetrically arranged, and a space is reserved between the two conveying assemblies;
the plurality of groups of positioning pieces are arranged on the conveying assembly along the conveying direction of the conveying assembly, each group of positioning pieces comprises two positioning pieces, and the two positioning pieces are coaxially arranged on the two conveying assemblies respectively;
the object placing device comprises an object placing device, an object placing device and a positioning device, wherein the object placing device is used for placing a silicon wafer, the object placing device is positioned between two conveying assemblies, two side ends of the object placing device can be respectively adsorbed with two positioning pieces in the same group, when the side ends of the object placing device are arranged on the positioning pieces, the side ends of the object placing device are influenced by the adsorption of the side ends of the object placing device, and the end parts of the positioning pieces extend and are inserted into the side ends of the object placing device;
and the spraying piece is positioned above the conveying assembly and is used for spraying the etching liquid onto the silicon wafer placed in the placement object.
In one embodiment, the conveying assembly comprises two driving wheels, a driving belt and a conveying belt, the driving belt is respectively sleeved on the two driving wheels, the conveying belt is sleeved on the driving belt, a plurality of first positioning grooves are formed in the conveying belt at intervals, two side ends of each first positioning groove penetrate through two side faces of the conveying belt respectively, an opening is formed in the top face of each first positioning groove, the width of the opening is smaller than that of each first positioning groove, the surfaces of the first positioning grooves and the openings are coated with glue, threads are formed in the surfaces of the first positioning grooves, and the first positioning grooves are used for mounting the positioning pieces.
In one embodiment, a first exhaust area, a first spraying area, a second exhaust area, a second spraying area and a third exhaust area are distributed in the spraying piece along the conveying direction of the conveying assembly, the first exhaust area is used for removing dust in the space where the silicon wafer is located and in the vicinity of the space, the first spraying area is used for spraying etching liquid for primary etching to the silicon wafer, the second exhaust area is used for removing etching liquid remained in the initial etching of the surface of the silicon wafer, the second spraying area is used for spraying etching liquid for re-etching to the silicon wafer, and the third exhaust area is used for removing etching liquid remained in the secondary etching of the surface of the silicon wafer.
In one embodiment, the conveyor belt further comprises a plurality of first limit rollers and a plurality of second limit rollers, wherein the first limit rollers are arranged on the upper surface of the conveyor belt at intervals, the second limit rollers are arranged on the lower surface of the conveyor belt at intervals, and the first limit rollers and the second limit rollers are arranged in a staggered manner and form a plurality of high-low staggered areas.
In one embodiment, the object placing device comprises a placing basket, two connecting arms and two connectors, one ends of the two connecting arms are connected with one side end of the placing basket, the other ends of the two connecting arms are respectively connected with the two connectors, the horizontal height of the placing basket is located below the connectors, a mounting groove is formed in the surface of each connector, a second through hole is formed in the bottom of each mounting groove, and the end portion of the positioning piece is clamped into the mounting groove after crossing the second through hole.
In one embodiment, a first installation cavity is formed in the positioning piece, a first through hole is formed in the end portion of the positioning piece, a positioning block is movably clamped in the first installation cavity, one end of the positioning piece, which is not provided with the first through hole, is elastically connected with the positioning block through a resetting piece, a third positioning groove is formed in the bottom end of the installation groove, a magnetic attraction piece is arranged at the bottom end of the third positioning groove, and when the positioning piece is clamped in the installation groove, the positioning block is adsorbed by the magnetic attraction piece and is inserted into the third positioning groove.
In one embodiment, one end of the positioning piece, which is not provided with the first through hole, is provided with a stretching piece in a penetrating manner, one end of the stretching piece is located outside the positioning piece, and the other end of the stretching piece is provided in the middle of the resetting piece in a penetrating manner and is connected with the positioning piece.
In one embodiment, a first bevel is arranged at the bottom end of the third positioning groove, and a second bevel is arranged at the bottom end of the positioning block and at the corner corresponding to the first through hole.
In one embodiment, the storage basket is internally provided with a rectangular space, inclined planes are arranged at corners of two opposite sides of the storage basket, second positioning grooves are formed in two opposite sides of the storage basket and the inclined planes, the horizontal height of each second positioning groove is located below the highest position of the inclined plane, above the lowest position of the inclined plane, and drain holes are formed in the bottom end of the storage basket.
The invention also provides a trench gate etching method, which comprises the following steps:
the two side ends of the object are respectively arranged on two positioning pieces in the same group, at the moment, the two side ends of the object are affected by adsorption, the end parts of the positioning pieces extend and are inserted into the side ends of the object, and the two positioning pieces complete the fixation of the central axis;
the conveying assembly is started to drive the object to move along the conveying assembly, and the spraying piece sprays the silicon wafers in the opposite object in the moving process, so that the etching of the silicon wafers is completed.
According to the trench gate etching device and the trench gate etching method, when the trench gate etching device is used, silicon wafers to be etched are firstly arranged at corresponding positions of the object to be placed at intervals, two side ends of the object to be placed are respectively arranged on two positioning pieces in the same group along the longitudinal direction after all the silicon wafers on the object to be placed are placed, when the end parts of the positioning pieces are clamped into the side ends of the object to be placed, the end parts of the positioning pieces are affected by the adsorption of the side ends of the object to be placed, and the end parts of the positioning pieces can extend and are inserted into the side ends of the object to be placed, so that the central axes of the positioning pieces and the object to be placed are fixed and cannot be separated. After the installation of the placed object is completed, the conveying assembly is started to drive the placed object to move along the conveying assembly, and the spraying piece sprays the silicon wafer in the placed object in the moving process, so that the etching of the silicon wafer is completed, the mobility of etching liquid on the surface of the silicon wafer is enhanced by changing the traditional soaking etching into spraying etching, and the etching efficiency of the trench gate is effectively improved.
Drawings
In order to more clearly illustrate the invention or the technical solutions of the prior art, the following description will briefly explain the drawings used in the embodiments or the description of the prior art, and it is obvious that the drawings in the following description are some embodiments of the invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic perspective view of an etching apparatus according to the present invention;
FIG. 2 is a schematic plan view of an etching apparatus according to the present invention;
FIG. 3 is a schematic view of a spray member according to the present invention;
FIG. 4 is a schematic view of the area division of the etching apparatus according to the present invention;
FIG. 5 is a schematic view of a partial structure of a conveyor assembly according to the present invention;
fig. 6 is a schematic view of an application state of the limiting roller provided by the invention;
FIG. 7 is a schematic view of a structure of an object according to the present invention;
fig. 8 is a schematic diagram of a connection structure between an object and a positioning element according to the present invention.
Reference numerals:
100. a transport assembly; 110. a driving wheel; 120. a transmission belt; 130. a conveyor belt; 131. a first positioning groove; 132. an opening; 200. a positioning piece; 210. a first mounting cavity; 220. a first through hole; 230. a positioning block; 240. a reset member; 250. a stretching member; 300. placing an object; 310. a basket for placing articles; 311. an inclined plane; 312. a second positioning groove; 313. a drain hole; 320. a connecting arm; 330. a connector; 331. a mounting groove; 332. a second through hole; 333. a third positioning groove; 334. a magnetic attraction piece; 400. a spray member; 410. a first exhaust area; 420. a first spray zone; 430. a second exhaust area; 440. a second spray zone; 450. a third exhaust area; 500. a deflector; 600. an electrophoresis area; 710. the first limit roller; 720. and the second limiting roller.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
A trench gate etching apparatus and an etching method according to the present invention are described below with reference to fig. 1 to 8.
As shown in fig. 1 and 2, in one embodiment, a trench gate etching apparatus includes two conveying assemblies 100, a plurality of sets of positioning members 200, a placement member 300 and a spraying member 400, where the two conveying assemblies 100 are symmetrically arranged, and a space is left between the two conveying assemblies 100; the multiple sets of positioning members 200 are arranged on the conveying assemblies 100 along the conveying direction of the conveying assemblies 100, each set of positioning members 200 comprises two positioning members 200, and the two positioning members 200 are coaxially arranged on the two conveying assemblies 100 respectively; the placement object 300 is used for placing a silicon wafer, the placement object 300 is positioned between the two conveying components 100, two side ends of the placement object 300 can be respectively adsorbed with the two positioning pieces 200 in the same group, when the side ends of the placement object 300 are arranged on the positioning pieces 200, the side ends of the positioning pieces 200 are affected by the adsorption of the side ends of the placement object 300, and the end parts of the positioning pieces 200 extend and are inserted into the side ends of the placement object 300; the shower member 400 is positioned above the transfer assembly 100 for spraying an etching solution onto the silicon wafer placed in the placement object 300.
According to the trench gate etching device, when the trench gate etching device is used, silicon wafers to be etched are firstly arranged at corresponding positions of the placement object 300 at intervals, two side ends of the placement object 300 are respectively arranged on two positioning pieces 200 in the same group along the longitudinal direction after all the silicon wafers on the placement object 300 are placed, when the end parts of the positioning pieces 200 are clamped into the side ends of the placement object 300, the end parts of the positioning pieces 200 are affected by the adsorption of the side ends of the placement object 300, and the end parts of the positioning pieces 200 can extend and are inserted into the side ends of the placement object 300, so that the central axes of the positioning pieces and the placement object 300 are fixed and cannot be separated. After the object 300 is installed, the conveying assembly 100 is started to drive the object 300 to move along the conveying assembly 100, and the spraying piece 400 sprays the silicon wafer in the object 300 in the moving process, so that the etching of the silicon wafer is completed, the mobility of etching liquid on the surface of the silicon wafer is enhanced by changing the traditional soaking etching into spraying etching, and the etching efficiency of the trench gate is effectively improved.
As shown in fig. 5, in one embodiment, the trench gate etching device provided by the invention, the conveying assembly 100 comprises two driving wheels 110, a driving belt 120 and a conveying belt 130, the driving belt 120 is respectively sleeved on the two driving wheels 110, the conveying belt 130 is sleeved on the driving belt 120, a plurality of first positioning grooves 131 are arranged on the conveying belt 130 at intervals, two side ends of the first positioning grooves 131 respectively penetrate through two side surfaces of the conveying belt 130, an opening 132 is formed in the top surface of the first positioning grooves 131, the width of the opening 132 is smaller than that of the first positioning grooves 131, the surfaces of the first positioning grooves 131 and the opening 132 are in glue coating arrangement, and threads are arranged in the surfaces of the first positioning grooves 131 and are used for installing the positioning pieces 200.
Specifically, since the conveyor belt 130 is provided with the plurality of positioning members 200, the conveyor belt 130 is made of rubber, and the thickness of the conveyor belt 130 is larger than that of the conveyor belt 120, if the conveyor belt 130 is provided with the first positioning grooves 131 only, and the outer surface of the conveyor belt 130 is not divided into a plurality of small sections by the openings 132, the tension difference of the outer surface of the conveyor belt 130 when the conveyor belt 130 bends along with the rotation of the conveyor belt 120 is very large, and the conveyor belt 130 cannot remove the bending force due to the positioning members 200 installed in the first positioning grooves 131, so that the outer surface of the conveyor belt 130 is easy to be damaged or cracked. In this embodiment, the opening 132 penetrating the first positioning groove 131 is formed on the outer surface of the conveying belt 130, so that the outer surface of the conveying belt 130 is divided into a plurality of small segments, when the conveying belt 130 is bent and deformed along with the rotation of the conveying belt 120, only the inner surface of the conveying belt 130 is attached to the bending, and the outer surface remains at the initial interval with the conveying belt 120, so that the positioning piece 200 installed in the first positioning groove 131 is prevented from being pressed, and the outer surface of the conveying belt 130 is damaged or strained due to the pressing.
As shown in fig. 3, in one embodiment, in the trench gate etching apparatus provided by the present invention, a first exhaust area 410, a first spraying area 420, a second exhaust area 430, a second spraying area 440, and a third exhaust area 450 are distributed in the spraying member 400 along the conveying direction of the conveying assembly 100, where the first exhaust area 410 is used for cleaning dust in the space where the silicon wafer is located and near, the first spraying area 420 is used for spraying an etching solution to the silicon wafer for preliminary etching, the second exhaust area 430 is used for cleaning the etching solution remaining after the initial etching of the surface of the silicon wafer, the second spraying area 440 is used for spraying the etching solution to the silicon wafer for re-etching, and the third exhaust area 450 is used for cleaning the etching solution remaining after the secondary etching of the surface of the silicon wafer.
Specifically, in order to avoid unidirectional or longitudinal spraying unable to complete all etching on the silicon wafer in the use process, and in order to avoid that the spraying effect counteracts the etching affecting the silicon wafer caused by the relative spraying of the spraying areas, the spraying areas are set to be two in the embodiment, the spraying directions of the two spraying areas can be set to be opposite, and the front and back stages of the two spraying areas are both provided with air exhaust areas for removing floating particles in the spraying areas before spraying, so as to avoid affecting the etching effect of the silicon wafer, and the etching liquid on the surface of the silicon wafer is removed after spraying, so that the silicon wafer is taken out as soon as possible.
As shown in fig. 6, in one embodiment, the trench gate etching apparatus provided by the present invention further includes a plurality of first limit rollers 710 and a plurality of second limit rollers 720, where the plurality of first limit rollers 710 are disposed at intervals and abut against the upper surface of the conveyor belt 130, the plurality of second limit rollers 720 are disposed at intervals and abut against the lower surface of the conveyor belt 120, and the plurality of first limit rollers 710 and the plurality of second limit rollers 720 are disposed in a staggered manner, so that the conveyor belt 120 and the conveyor belt 130 form a plurality of high-low undulating regions.
Specifically, in this embodiment, since the conveying belt 130 is used to convey the object 300 and the spraying member 400 is directly sprayed on the object 300, in order to prevent the etching solution from flowing along the object 300 to the conveying belt 130 and being carried to other spaces during the rotation of the conveying belt 130, in this embodiment, the first limiting rollers 710 and the second limiting rollers 720 are disposed in a staggered manner, and the first limiting rollers 710 and the second limiting rollers 720 are respectively disposed on the upper surface and the lower surface of the conveying belt 130 and form a plurality of high-low staggered areas, and the conveying belt 130 in the areas is disposed in an inclined manner, as in the figure, the positions of the conveying belt 130 corresponding to the three first limiting rollers 710 are respectively the first exhaust area 410, the second exhaust area 430 and the third exhaust area 450, and the positions of the conveying belt 130 corresponding to the two second limiting rollers 720 disposed in the middle position are respectively the first spraying area 420 and the second spraying area 440. After the etching solution sprayed in the spraying area is stained on the conveyor belt 130, when the conveyor belt 130 rotates to the exhaust area, the etching solution on the surface of the conveyor belt 130 flows along the inclined conveyor belt 130 and is pushed by the wind blown out by the exhaust area to be quickly gathered and separated from the conveyor belt 130.
As shown in fig. 4, in one embodiment, the trench gate etching apparatus further includes a baffle 500, and in order to save space, an electrophoresis area 600 may be disposed below the conveying assembly 100, when the silicon wafer in the object 300 is sprayed and etched above, the silicon wafer is moved into the electrophoresis area 600 along with the rotation of the conveying belt 130 to complete electrophoresis, and in order to avoid the mutual influence of two different processing processes above and below the conveying assembly 100, the two processing areas are isolated by the baffle 500, and the baffle 500 is used for guiding the etching liquid discharged during the etching process to a designated position. Wherein the electrophoretic region 600 is not the only one, and may be modified according to specific process requirements.
As shown in fig. 7, in one embodiment, the object 300 includes a basket 310, two connecting arms 320 and two connectors 330, one end of each connecting arm 320 is connected to one side of the basket 310, the other end is respectively connected to two connectors 330, the horizontal height of the basket 310 is located below the connectors 330, the surface of each connector 330 is provided with a mounting groove 331, the bottom of each mounting groove 331 is provided with a second through hole 332, and the end of the positioning element 200 is clamped into the mounting groove 331 after passing over the second through hole 332.
Specifically, the horizontal height of the basket 310 is set below the connector 330, so that the basket 310 can always maintain an initial state after the article 300 is mounted on the positioning member 200, and no inclination or overturn is generated. The second through hole 332 is formed at the bottom end of the mounting groove 331 in the connector 330, so that the object 300 is more convenient to mount to the positioning member 200, and the object is directly pressed and clamped.
As shown in fig. 8, in one embodiment of the trench gate etching device provided by the invention, a first installation cavity 210 is provided in a positioning piece 200, a first through hole 220 is provided at an end of the positioning piece 200, a positioning piece 230 is movably clamped in the first installation cavity 210, one end of the positioning piece 200, which is not provided with the first through hole 220, is elastically connected with the positioning piece 230 through a reset piece 240, a third positioning slot 333 is provided at a bottom end of a mounting slot 331, a magnetic attraction piece 334 is provided at a bottom end of the third positioning slot 333, and when the positioning piece 200 is clamped in the mounting slot 331, the positioning piece 230 is attracted by the magnetic attraction piece 334 and is inserted into the third positioning slot 333.
In one embodiment, in the trench gate etching apparatus provided by the present invention, one end of the positioning member 200, which is not provided with the first through hole 220, is provided with the stretching member 250 in a penetrating manner, one end of the stretching member 250 is located outside the first installation cavity 210, and the other end of the stretching member 250 is provided in a penetrating manner in the middle of the resetting member 240 and is connected with the positioning block 230.
Specifically, when the opposite basket 310 or the silicon wafer in the opposite basket 310 needs to be taken out or replaced, the stretching member 250 is pulled to be located at one end of the outer portion of the positioning member 200, so as to drive the positioning block 230 to move away from the connecting head 330, and at this time, the positioning block 230 is separated from the third positioning slot 333, so that the worker can take the object 300 from the positioning member 200.
In one embodiment, in the trench gate etching apparatus provided by the present invention, the bottom end of the third positioning slot 333 is provided with a first bevel, and the bottom end of the positioning block 230 and the corresponding corner of the first through hole 220 are provided with second bevel.
Specifically, the first bevel connection can provide the support of the bevel 311 for avoiding the positioning block 230 when the connector 330 is separated from the positioning member 200, so as to avoid the situation that the connector and the positioning block cannot be separated due to interference between the positioning block 230 and the third positioning slot 333. When the positioning block 230 is sprayed with the etching solution, the etching solution slides down along the positioning block 230 and slides down along the bevel when contacting the second bevel, and the second bevel can enable the etching solution to have higher fluidity, so that the etching solution is prevented from converging and remaining on the positioning block 230 and is transferred into the connector 330 in the use process.
In one embodiment, the trench gate etching device provided by the invention has a rectangular space inside the basket 310, inclined planes 311 are arranged at corners of two opposite sides inside the basket 310, second positioning slots 312 are formed in two opposite sides inside the basket 310 and on the inclined planes 311, the horizontal height of each second positioning slot 312 is positioned below the highest position of the inclined plane 311, above the lowest position of the inclined plane 311, and a drain hole 313 is formed in the bottom end of the basket 310.
Specifically, two sides of the silicon wafer can be respectively clamped in the two corresponding second positioning grooves 312, and the second positioning grooves 312 are formed on the inclined surface 311, so that the local position of the bottom of the silicon wafer can be limited, and the setting stability of the silicon wafer is enhanced.
In one embodiment, a trench gate etching method includes the steps of:
the two side ends of the object are respectively arranged on two locating pieces in the same group, at the moment, the two side ends of the object are affected by adsorption, and the end parts of the locating pieces extend and are inserted into the side ends of the object, so that the two locating pieces are fixed by the central axis.
The conveying assembly is started to drive the object to move along the conveying assembly, and the spraying piece sprays the silicon wafers in the opposite object in the moving process, so that the etching of the silicon wafers is completed.
According to the trench gate etching method, when the trench gate etching method is used, firstly, silicon wafers to be etched are arranged at corresponding positions of the object to be placed at intervals, after all the silicon wafers on the object to be placed are placed, two side ends of the object to be placed are respectively arranged on two locating pieces of the same group along the longitudinal direction, when the end parts of the locating pieces are clamped into the side ends of the object to be placed, the end parts of the locating pieces are affected by the adsorption of the side ends of the object to be placed, and the end parts of the locating pieces can extend and are inserted into the side ends of the object to be placed, so that the central axes of the two silicon wafers are fixed and cannot be separated from each other. After the installation of the placed object is completed, the conveying assembly is started to drive the placed object to move along the conveying assembly, and the spraying piece sprays the silicon wafer in the placed object in the moving process, so that the etching of the silicon wafer is completed, the mobility of etching liquid on the surface of the silicon wafer is enhanced by changing the traditional soaking etching into spraying etching, and the etching efficiency of the trench gate is effectively improved.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The foregoing examples illustrate only a few embodiments of the invention and are described in detail herein without thereby limiting the scope of the invention. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention. Accordingly, the scope of protection of the present invention is to be determined by the appended claims.
Claims (9)
1. A trench gate etching apparatus, comprising:
the two conveying assemblies are symmetrically arranged, and a space is reserved between the two conveying assemblies;
the plurality of groups of positioning pieces are arranged on the conveying assembly along the conveying direction of the conveying assembly, each group of positioning pieces comprises two positioning pieces, and the two positioning pieces are coaxially arranged on the two conveying assemblies respectively;
the positioning piece is internally provided with a first mounting cavity, one end part of the positioning piece is provided with a first through hole, a positioning block is movably clamped in the first mounting cavity, and one end of the positioning piece, which is not provided with the first through hole, is elastically connected with the positioning block through a resetting piece;
the object placing device comprises an object placing device, an object placing device and a positioning device, wherein the object placing device is used for placing a silicon wafer, the object placing device is positioned between two conveying assemblies, two side ends of the object placing device can be respectively adsorbed with two positioning pieces in the same group, when the side ends of the object placing device are arranged on the positioning pieces, the side ends of the object placing device are influenced by the adsorption of the side ends of the object placing device, and the end parts of the positioning pieces extend and are inserted into the side ends of the object placing device;
the end part of the object is a connector, a mounting groove is formed in the surface of the connector, a third positioning groove is formed in the bottom end of the mounting groove, a magnetic attraction piece is arranged at the bottom end of the third positioning groove, and when the positioning piece is clamped in the mounting groove, the positioning block is attracted by the magnetic attraction piece and is inserted into the third positioning groove;
and the spraying piece is positioned above the conveying assembly and is used for spraying the etching liquid onto the silicon wafer placed in the placement object.
2. The trench gate etching device according to claim 1, wherein the conveying assembly comprises two driving wheels, a driving belt and a conveying belt, the driving belt is respectively sleeved on the two driving wheels, the conveying belt is sleeved on the driving belt, a plurality of first positioning grooves are formed in the conveying belt at intervals, two side ends of each first positioning groove penetrate through two side surfaces of the conveying belt respectively, an opening is formed in the top surface of each first positioning groove, the width of each opening is smaller than that of each first positioning groove, the surfaces of the first positioning grooves and the openings are covered with glue, and threads are formed in the surfaces of the first positioning grooves and used for installing the positioning pieces.
3. The trench gate etching device according to claim 2, wherein a first exhaust area, a first spraying area, a second exhaust area, a second spraying area and a third exhaust area are distributed in the spraying piece along the conveying direction of the conveying component, the first exhaust area is used for removing dust in the space where the silicon wafer is located and in the space nearby, the first spraying area is used for spraying etching liquid to the silicon wafer for preliminary etching, the second exhaust area is used for removing etching liquid remained in the initial etching of the surface of the silicon wafer, the second spraying area is used for spraying etching liquid to the silicon wafer for re-etching, and the third exhaust area is used for removing etching liquid remained in the secondary etching of the surface of the silicon wafer.
4. The trench gate etching device according to claim 3, further comprising a plurality of first limit rollers and a plurality of second limit rollers, wherein the plurality of first limit rollers are arranged at intervals and abut against the upper surface of the conveyor belt, the plurality of second limit rollers are arranged at intervals and abut against the lower surface of the conveyor belt, and the plurality of first limit rollers and the plurality of second limit rollers are arranged in a staggered manner, and the conveyor belt form a plurality of high-low fluctuation areas.
5. The trench gate etching device according to claim 4, wherein the object placing device comprises a basket, two connecting arms and two connectors, one end of each connecting arm is connected with one side end of the basket, the other end of each connecting arm is respectively connected with the two connectors, the horizontal height of the basket is located below the connectors, a second through hole is formed in the bottom of the mounting groove, and the end of the positioning piece is clamped into the mounting groove after passing through the second through hole.
6. The trench gate etching apparatus according to claim 5, wherein one end of the positioning member, which is not provided with the first through hole, is provided with a stretching member in a penetrating manner, one end of the stretching member is located outside the first mounting cavity, and the other end of the stretching member is provided in the middle of the resetting member in a penetrating manner and is connected with the positioning block.
7. The trench gate etching device of claim 6, wherein a first bevel is provided at a bottom end of the third positioning groove, and a second bevel is provided at a corner of the positioning block corresponding to the first through hole.
8. The trench gate etching device according to claim 7, wherein the storage basket is provided with a rectangular space, corners of two opposite sides of the storage basket are provided with inclined planes, the opposite arrangement directions of the two inclined planes are perpendicular to the opposite arrangement directions of the two connectors, two opposite sides of the storage basket and the inclined planes are provided with second positioning grooves, the bottommost end of each second positioning groove is located between the highest point and the lowest point of the inclined planes, and the bottom end of the storage basket is provided with a drain hole.
9. A trench gate etching method, the method comprising:
the two side ends of the object are respectively arranged on two positioning pieces in the same group, at the moment, the two side ends of the object are affected by adsorption, the end parts of the positioning pieces extend and are inserted into the side ends of the object, and the two positioning pieces complete the fixation of the central axis;
the conveying assembly is started to drive the object to move along the conveying assembly, and the spraying piece sprays the silicon wafers in the opposite object in the moving process, so that the etching of the silicon wafers is completed.
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