CN116754578B - Detection system for wafer scratch and detection method of system - Google Patents
Detection system for wafer scratch and detection method of system Download PDFInfo
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- CN116754578B CN116754578B CN202311044964.1A CN202311044964A CN116754578B CN 116754578 B CN116754578 B CN 116754578B CN 202311044964 A CN202311044964 A CN 202311044964A CN 116754578 B CN116754578 B CN 116754578B
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- 238000001514 detection method Methods 0.000 title claims abstract description 140
- 238000005498 polishing Methods 0.000 claims abstract description 4
- 230000002093 peripheral effect Effects 0.000 claims description 17
- 238000003384 imaging method Methods 0.000 claims description 14
- 238000005259 measurement Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 238000004458 analytical method Methods 0.000 claims description 4
- 239000012780 transparent material Substances 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 abstract description 103
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 230000007547 defect Effects 0.000 abstract description 4
- 238000000105 evaporative light scattering detection Methods 0.000 abstract 1
- 238000012360 testing method Methods 0.000 description 6
- 239000002932 luster Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000008439 repair process Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
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- 239000002184 metal Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000007405 data analysis Methods 0.000 description 1
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- 239000002994 raw material Substances 0.000 description 1
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01V—GEOPHYSICS; GRAVITATIONAL MEASUREMENTS; DETECTING MASSES OR OBJECTS; TAGS
- G01V9/00—Prospecting or detecting by methods not provided for in groups G01V1/00 - G01V8/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Abstract
The application relates to the technical field of semiconductor wafer detection, in particular to a detection system for wafer scratches and a detection method of the system, and aims to solve the problem of low efficiency of wafers in mass detection. Comprising the following steps: a storage table; the detection base is provided with a containing groove at the top; the detection sheet is provided with a plurality of areas; the wafer is detachably connected in the accommodating groove, the polishing surface is far away from the bottom surface of the accommodating groove, the wafer and the accommodating groove are coaxially arranged, the detection equipment comprises a support frame and a camera equipment which are connected to the detection base, and the support frame is connected with a first support; the detection piece is used for being placed on the wafer, and the camera equipment is used for analyzing the wafer through the detection piece, and the top surface of detecting the base is provided with a plurality of location bar codes, and when the camera equipment detects the scratch area, the camera equipment can use the scratch area as the center to preferentially detect the adjacent area around. Through the detection piece, the image pickup device can rapidly record the wafer defect area and the surrounding defect area, and the detection efficiency is improved.
Description
Technical Field
The application relates to the technical field of semiconductor wafer detection, in particular to a detection system for wafer scratches and a detection method of the system.
Background
Wafers, i.e., silicon wafers, are also known as semiconductor wafers. Silicon wafers are one of the base materials for the fabrication of integrated circuits and other semiconductor devices. It has semiconductor characteristics, can realize the function of an electronic device by controlling the flow of current, and is one of key raw materials for manufacturing various electronic devices.
Wafers can be classified into two types, non-patterned wafers, i.e., wafers having surfaces that are not pre-fabricated with circuit structures and patterns, and are commonly used for fabricating general circuit designs and chips, and the surfaces of such wafers are generally smooth, and neither the non-patterned wafers nor the patterned wafers are easily recognized when the surfaces are scratched, because the surfaces of the wafers are generally very smooth and are not easily observed by the naked eye even if the surfaces are minute, and if surface defects need to be detected, high-precision tools such as a microscope are generally required for observation and analysis.
In the wafer processing process, some problems may occur, such as scratches, wafer breakage, uneven dicing, etc. on the surface of the wafer, the wafer is made of a non-transparent semiconductor material, and the surface of the wafer has metallic luster, and due to the characteristic of light reflected by the metal surface, it may be difficult to detect surface scratches, even some shallower scratches cannot be detected, and in the manufacturing process, the wafer needs to be detected in batches, so that defects of the wafer need to be accurately found, so as to improve the detection efficiency.
Disclosure of Invention
The application aims to solve the technical problems that the existing wafer is low in efficiency when scratches are detected, and the scratches are difficult to detect due to the metal luster of the surface of the wafer, and provides a detection system for the wafer scratches and a detection method of the system, so that the problems are solved.
The application is realized by the following technical scheme:
a detection system for wafer scratches, comprising:
a storage table;
the detection base is rotationally connected to the object placing table, and the top of the detection base is provided with a containing groove;
the detection piece is provided with a plurality of areas with equal size;
the wafer is provided with at least one polished surface, the wafer is detachably connected in the accommodating groove, the polished surface is far away from the bottom surface of the accommodating groove, and the wafer and the accommodating groove are coaxially arranged;
the detection device comprises a support frame and a camera device, wherein the support frame and the camera device are connected to the detection base, the top end of the support frame is rotatably connected with a first support, and the camera device is arranged at one end of the first support;
the detection sheet is used for being placed on the wafer, the imaging device can scan and analyze the wafer through the detection sheet, a plurality of positioning bar codes are arranged between the top surface of the detection base and the edge of the detection sheet, and when the imaging device detects a scratch area, the imaging device can preferentially detect surrounding adjacent areas by taking the scratch area as the center.
In the above technical scheme, the wafer to be detected is placed in the accommodating groove, the detection sheet is placed on the detection base, the imaging device shoots the polished surface of the wafer through the detection sheet, scratches on the wafer can be displayed in the area of the detection sheet, and the imaging device can detect the area around the scratch area preferentially, so that the detection efficiency is accelerated.
In some optional technical schemes, the detection sheet is square, the detection sheet is provided with a plurality of grids in an equidistant linear array with adjacent right-angle sides, and through holes are formed between the adjacent grids in a perpendicular mode, and the through holes are the areas.
In the technical scheme, the detection sheet is square, the grids are distributed at equal intervals, and the wafer can be divided into a plurality of areas with the same size.
In some optional technical solutions, the side length of the detecting sheet is greater than the diameter of the wafer, a plurality of measuring letters are arranged on two sides of the detecting sheet, which are parallel to each other, in a mirror image manner, and a plurality of measuring numbers are arranged on the other two sides of the detecting sheet, which are parallel to each other, in a mirror image manner.
In the technical scheme, the measurement letters and the measurement numbers are convenient for analyzing and recording the state of the current area.
In some optional technical schemes, the annular groove is formed in the inner peripheral wall of the accommodating groove, a plurality of pressure tiles are arranged in the annular groove and coaxially arranged with the annular groove, a cavity is arranged in the detection base, the cavity is communicated with the annular groove, a shell is arranged in the cavity, a telescopic rod connected with the pressure tiles is arranged in the shell, one end of the telescopic rod, opposite to the pressure tiles, is arranged in the shell and is connected with a supporting rod, the supporting rod is electrically connected with the telescopic rod, the supporting rod is used for controlling the telescopic rod to stretch out and draw back, and a pressure sensor is arranged on the pressure tiles.
In the technical scheme, the controller can control the upper end and the lower end of the clamping plate to be opened or closed, and can control the pressure tiles to apply pressure to the wafer when the top end of the clamping plate is opened or closed, so that the pressure sensors on the pressure tiles can detect whether scratches exist on the peripheral side wall of the wafer.
In some optional technical schemes, the top of casing is provided with incident equipment, the bottom surface of holding tank is transparent material, incident equipment can launch and wear to establish the holding tank with the laser of wafer, the top of support frame still is connected with the second support, the second support with first support is parallel, the second support is kept away from the one end of support frame is connected with light source equipment, light source equipment's diameter with detect the base and equal, light source equipment is used for receiving incident equipment's laser and analysis.
According to the technical scheme, after the scratch is detected, according to the record of the image pickup device on the area where the scratch is located, the incident device of the corresponding area can be started, so that laser passes through the area where the scratch of the wafer is located, and the light source device judges the depth of the scratch of the current area by the system according to the intensity of the received laser.
In some optional technical schemes, the transmitting end of the incident device is provided with a plurality of transmitting windows with the same size and position as the through holes, any one of the transmitting windows can transmit laser through the transmitting end, and the receiving end of the light source device is also provided with a plurality of receiving windows with the same size and position as the through holes.
According to the technical scheme, according to the scratch area, laser can be emitted through the corresponding emission window, and the depth of the current scratch is judged through refraction of the laser.
In some optional technical schemes, a first positioning block is arranged on the peripheral wall of the detection base, and a second positioning block is arranged on the outer wall of the detection piece.
In the technical scheme, when the detection piece is installed, the alignment center can be determined through the first positioning block and the second positioning block, so that deviation of the installation angle is avoided.
The wafer scratch detection method based on the detection system of any one of the above, comprises the following steps:
s1, starting detection, mounting a wafer in a containing groove for positioning, and enabling a polishing surface to face to the right upper side;
s2, mounting the detection sheet on the top surface of the detection base and positioning;
s3, rotating the first bracket to enable the camera equipment to be coaxial with the detection base;
s4, the imaging equipment scans the wafer through the detection sheet and records the position of the area where the scratch is located;
s5, judging whether all areas are recorded or not;
s6, rotating the second bracket to enable the light source equipment and the detection base to be coaxial, and enabling the first bracket to be far away from the detection base;
s7, starting an incidence device to irradiate a scratch area through a corresponding emission window according to the scratch position recorded by the camera device, and enabling laser to penetrate through the wafer and enter the light source device;
s8, the light source equipment analyzes the scratch depth of the current area according to the intensity of the irradiation laser.
In some optional solutions, the step S1 includes:
s11, the telescopic rod controls the pressure tile to be extruded towards the wafer through the supporting rod;
s12, detecting scratches on the peripheral side wall of the wafer by a pressure sensor on the pressure tile;
s13, judging whether scratches exist, detecting that the scratches exist, executing step S131, detecting that the scratches do not exist, and executing step S132 until all areas are detected;
s131, detecting that scratches exist according to the step S13, and recording data;
s132, detecting that no scratch exists according to the step S13, and continuously detecting other areas;
s14, rotating the wafer to enable the peripheral wall of the wafer to be detected, and returning to the step S13 to judge and record if scratches exist until the peripheral wall of the wafer is detected.
In some optional embodiments, the step S4 includes the following steps:
s41, detecting a plurality of areas in sequence, and comparing according to the standard areas in the image pickup equipment;
s42, judging whether the current detection area is a scratch area, and continuously executing the step S41 in the non-scratch area;
s43, when the scratch area is judged, preferentially detecting the wafer in the 8-grid area around the current scratch area by taking the current scratch area as the center;
s44, judging whether all areas are detected, and continuously executing the step S41 when the undetected areas exist;
s45, after detection of all areas is completed, enabling the detection base to rotate along the center of the detection base;
s46, detecting all the areas again by the camera equipment, preferentially detecting the areas where scratches are located, and confirming the rotated positions of all the areas by the camera equipment according to the positioning bar codes;
s47, judging whether all the areas are detected, and if not, continuing to execute the step S46.
Compared with the prior art, the application has the following advantages and beneficial effects:
1. in the application, the wafer to be detected can be placed in the accommodating groove, the wafer is divided into a plurality of areas by the detection sheet, the imaging equipment detects each area of the wafer by the detection sheet, and when the imaging equipment detects the scratch area, the imaging equipment can preferentially detect the areas adjacent to the scratch area, so that the efficiency is improved;
2. according to the application, after the wafer is placed in the accommodating groove, the pressure tile can be controlled to be extruded towards the wafer by the telescopic rod, and whether scratches exist on the peripheral wall of the wafer is determined according to the pressure sensor on the pressure tile;
3. after all areas of the wafer are detected, the incident equipment in the detection base can emit laser to irradiate the wafer through the transparent accommodating groove, and the light source equipment above the detection base judges the depth of scratches in the current area according to the refractive index of the laser.
Drawings
The accompanying drawings, which are included to provide a further understanding of embodiments of the application and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the principles of the application. In the drawings:
FIG. 1 is a schematic diagram of the structure of the present application;
FIG. 2 is a schematic diagram of the structure of the detecting base and the detecting sheet in the present application;
FIG. 3 is an exploded view of the inspection base, inspection piece and wafer of the present application;
FIG. 4 is a cross-sectional view of a test base in accordance with the present application;
FIG. 5 is an enlarged view of a portion of the portion at P in FIG. 4;
FIG. 6 is a schematic diagram of the structure of a test strip according to the present application;
FIG. 7 is a bottom view of the test strip of the present application;
FIG. 8 is a top view of a test wafer without a test wafer according to the present application;
FIG. 9 is a top view of a wafer with scratches placed on the bottom of the test piece according to the present application;
FIG. 10 is a flowchart illustrating the operation of the detection system of the present application;
FIG. 11 is a second flowchart of the operation of the detection system of the present application;
FIG. 12 is a third flowchart of the operation of the detection system of the present application.
The reference numerals are represented as follows:
1. detecting a base; 11. a receiving groove; 12. a support rod; 13. a telescopic rod; 14. a pressure tile; 15. an incidence device; 16. a first positioning block; 2. a wafer; 3. a detection sheet; 31. a second positioning block; 32. a clamping ring; 4. a support frame; 41. a first bracket; 42. an image pickup apparatus; 43. a second bracket; 44. a light source device.
Detailed Description
For the purpose of making apparent the objects, technical solutions and advantages of the present application, the present application will be further described in detail with reference to the following examples and the accompanying drawings, wherein the exemplary embodiments of the present application and the descriptions thereof are for illustrating the present application only and are not to be construed as limiting the present application. It should be noted that the present application is already in a practical development and use stage.
Example 1
As shown in fig. 1 to 3, a detection system for wafer scratches includes:
a storage table;
the detection base 1 is rotationally connected to the object placing table, and the top of the detection base 1 is provided with a containing groove 11;
the detection sheet 3 is provided with a plurality of areas with equal size;
the wafer 2 is provided with at least one polished surface, the wafer 2 is detachably connected in the accommodating groove 11, the polished surface is far away from the bottom surface of the accommodating groove 11, and the wafer 2 and the accommodating groove 11 are coaxially arranged;
the detection device comprises a support frame 4 and a camera device 42 which are connected to the detection base 1, wherein the top end of the support frame 4 is rotatably connected with a first support 41, and the camera device 42 is arranged at one end of the first support 41;
the detecting piece 3 is used for being placed on the wafer 2, the imaging device 42 can scan and analyze the wafer 2 through the detecting piece 3, a plurality of positioning bar codes are arranged between the top surface of the detecting base 1 and the edge of the detecting piece 3, and when the imaging device 42 detects the scratch area, the surrounding adjacent areas can be preferentially detected by taking the scratch area as the center.
As shown in fig. 6 to 8, the detecting sheet 3 is square, the detecting sheet 3 has a plurality of grids in an equidistant linear array with adjacent right-angle sides, and through holes are formed between the adjacent vertical grids, and the through holes are the areas.
As shown in fig. 2, a first positioning block 16 is provided on the outer peripheral wall of the detection base 1, and a second positioning block 31 is provided on the outer wall of the detection piece 3.
As shown in fig. 3 and 9, the side length of the detecting sheet 3 is larger than the diameter of the wafer 2, a plurality of measuring letters are arranged on two parallel sides of the top surface of the detecting sheet 3 in a mirror image manner, and a plurality of measuring numerals are arranged on the other two parallel sides of the top surface of the detecting sheet 3 in a mirror image manner.
As shown in fig. 4 and 5, an annular groove is formed in the inner peripheral wall of the accommodating groove 11, a plurality of pressure tiles 14 are arranged in the annular groove, the pressure tiles 14 and the annular groove are coaxially arranged, a cavity is arranged in the detection base 1 and communicated with the annular groove, a shell is arranged in the cavity, a telescopic rod 13 connected with the pressure tiles 14 is arranged in the shell, one end of the telescopic rod 13, opposite to the pressure tiles 14, is arranged in the shell and is connected with a supporting rod 12, the supporting rod 12 is electrically connected with the telescopic rod 13, the supporting rod 12 is used for controlling the telescopic rod 13 to stretch and retract, and a pressure sensor is arranged on the pressure tiles 14.
Specifically, after the wafer 2 is processed, the original substrate surface is processed into a polished surface so as to improve the surface quality and optical performance of the wafer, when the wafer 2 is mounted for detection, the polished surface of the wafer 2 is firstly placed in the accommodating groove 11 upwards, then the detection piece 3 is mounted, the detection piece 3 is of a square structure, the wafer 2 and the detection base 1 are of a column structure, as shown in fig. 7, preferably, the bottom surface of the detection piece 3 can be connected with a clamping ring 32, the top surface of the corresponding detection base 1 is provided with a groove which is clamped with the clamping ring 32 and is rotationally connected with the clamping ring 32, and after the detection piece 3 is mounted by clamping, the detection piece 3 can be rotated to the first positioning block 16 and the second positioning block 31 by rotating the second positioning block 31 on the top surface of the detection base 1.
It should be noted that, the side length of the detecting sheet 3 is greater than the diameter of the wafer 2, the side length of the detecting sheet 3 is equal to the diameter of the top surface of the detecting base 1, no matter how many specifications of the wafer 2 are, after the wafer 2 is mounted in the accommodating groove 11, the wafer 2 can be fixed by the pressure tiles 14, the square detecting sheet 3 can divide the wafer 2 into a plurality of equal areas through criss-cross grids, one side of the side length of the top surface of the detecting sheet 3 is respectively provided with a measuring number and a measuring letter, the through hole at the lower left corner of the detecting sheet 3 is used as a coordinate, the measuring letter of the transverse coordinate is respectively A, B, C, D from left to right, etc., the measuring number of the longitudinal coordinate is respectively 1, 2, 3, 4, etc. from bottom to top, if the mark of the first area at the lower left corner is A1, the area of the right side of the area is B1, the area of the upper part of the A1 is A2, after the mounting of the detecting sheet 3 is completed, the first bracket 41 can be moved to the camera 42 to the upper part of the detecting sheet 3, and scratches on the wafer 2 are detected by the detecting sheet 3.
As shown in fig. 9, the image capturing apparatus 42 separately analyzes and compares each area separately, and follows a method of detecting from left to right and from top to bottom from A1, in this embodiment, the scratches are Q1 and Q2 respectively, according to an image processing algorithm of the image capturing apparatus 42, the scratches at the Q1 are preferentially detected from left to right and from bottom to top, the scratches at the Q1 are linear and continuous, the scratches at the I1 area are blocked by the grid of the detecting sheet 3, the scratches at the J2 area are detected first, it is noted that the measurement numbers and the measurement letters on the detecting sheet 3 are mirror images on two sides, so that the positions of the scratches can be quickly confirmed after the rotation angle, the J2 area can also be a mirror image C11 area, the J2 and mirrored C11 regions are the same region, and the imaging device 42 preferentially analyzes the adjacent regions around the J2, i.e., 8 regions I1, J1, K2, K3, J3, I2, where only I3 is scratched, so that the region where the scratch is detected is H4, and the region where the H4 is detected is analyzed again, and no new scratch region is obtained, so that according to the data analysis, the scratch regions here are J2, I3, and H4, respectively, after the detection of the region is completed, the repair should be performed with the region where the scratch is located and the grid around the scratch, when the subsequent repair of the scratch is completed, to prevent the scratch region similar to the I2 type from being blocked and omitted.
The scratch at the Q2 is linear but discontinuous, the scratch at the D8 area is preferentially detected, then the surrounding area is detected by taking the D8 area as the center, the detection principle is the same as that of the scratch at the Q1 area, and the detection principle is not repeated here, and it is to be noted that the situation that the scratch cannot be detected is caused by the surface of the wafer 2, such as the E8 area where the scratch is not continuous, the image pickup device 42 cannot capture the scratch due to the metallic luster, after all the areas are detected, the detection base 1 is rotated, the detection sheet 3 and the wafer 2 rotate by a certain angle, the metallic luster at the E8 area is shot to other directions, so that the image pickup device 42 can take a picture and analyze, and after the detection base 1 rotates by a certain angle, the image pickup device 42 can position according to three positioning bar codes on the top surface of the detection base 1, and can also position according to coordinates and measurement numbers on the diagonal angle of the detection sheet 3.
As shown in fig. 1 and 4, the top end of the housing is provided with an incidence device 15, the bottom surface of the accommodating groove 11 is made of transparent material, the incidence device 15 can emit laser penetrating through the accommodating groove 11 and the wafer 2, the top end of the supporting frame 4 is also connected with a second bracket 43, the second bracket 43 is parallel to the first bracket 41, one end, far away from the supporting frame 4, of the second bracket 43 is connected with a light source device 44, the diameter of the light source device 44 is equal to that of the detection base 1, and the light source device 44 is used for receiving and analyzing the laser of the incidence device 15.
As shown in fig. 1 and 4, the transmitting end of the incident device 15 is provided with a plurality of transmitting windows with the same size and position as the through holes, any transmitting window can transmit laser through the transmitting end, and the receiving end of the light source device 44 is also provided with a plurality of receiving windows with the same size and position as the through holes.
Specifically, a baffle plate is arranged in the shell of the detection base 1, the incidence equipment 15 is arranged on the baffle plate, a power component is arranged at the bottom of the baffle plate to provide power, the accommodating groove 11 is made of transparent materials, so that laser is convenient to pass through, the incidence equipment 15 is arranged in the shell, the top surface of the incidence equipment 15 is provided with a plurality of emission windows, the diameters of the incidence equipment 15 and the accommodating groove 11 are equal, the plurality of emission windows are equal to the sizes of a plurality of areas falling in the accommodating groove 11, the positions of the emission windows correspond to the sizes of the areas falling in the accommodating groove 11, when the laser detection of the scratch depth, such as the scratch at the Q1 position, after the recording of the image pickup equipment 42, the incidence equipment 15 emits laser towards the J2, I3 and H4 areas, simultaneously, the light source equipment 44 and the detection base 1 are coaxial by rotating the second bracket 43 in advance, the first bracket 41 and the second bracket 43 are both connected with the support 4 in a rotating way, the laser emitted by the incidence device 15 can enter the corresponding area of the light source device 44, the bottom surface of the light source device 44 is also provided with a receiving window corresponding to the incidence window, after the laser irradiates the receiving window, the light source device 44 can judge the depth of the scratch in the current area according to the refractive index of the laser received by the current receiving window, so that the subsequent wafer repairing process is convenient, and it is worth noting that the thickness of the grid is smaller, most of the scratches cannot be blocked, and when repairing, the repair can be performed according to the area to be repaired and the grid area around the area to be repaired, omission cannot occur, and secondary damage to the wafer 2 cannot be caused when repairing because the scratches blocked by the grid are fewer.
Example 2
As shown in fig. 10, a method for detecting a wafer scratch, which is performed based on the detection system of embodiment 1, includes the following steps:
s1, starting detection, mounting a wafer 2 in a containing groove 11 for positioning, wherein a polishing surface faces to the right upper side;
s2, mounting the detection sheet 3 on the top surface of the detection base 1 and positioning;
s3, rotating the first bracket 41 to enable the camera equipment 42 to be coaxial with the detection base 1;
s4, the imaging device 42 scans the wafer 2 through the detection sheet 3 and records the position of the area where the scratch is located;
s5, judging whether all areas are recorded or not;
s6, rotating the second bracket 43 to enable the light source device 44 to be coaxial with the detection base 1, and enabling the first bracket 41 to be far away from the detection base 1;
s7, starting the incidence equipment 15 to irradiate the scratch area through the corresponding emission window according to the scratch position recorded by the image pickup equipment 42, and enabling laser to penetrate through the wafer 2 and enter the light source equipment 44;
s8, the light source device 44 analyzes the scratch depth of the current area according to the intensity of the irradiation laser.
As shown in fig. 11, preferably, the step S1 includes:
s11, a telescopic rod 13 controls a pressure tile 14 to be extruded towards a wafer 2 through a supporting rod 12;
s12, detecting scratches on the peripheral side wall of the wafer 2 by a pressure sensor on the pressure tile 14;
s13, judging whether scratches exist, detecting that the scratches exist, executing step S131, detecting that the scratches do not exist, and executing step S132 until all areas are detected;
s131, detecting that scratches exist according to the step S13, and recording data;
s132, detecting that no scratch exists according to the step S13, and continuously detecting other areas;
s14, rotating the wafer 2 to enable the peripheral wall of the wafer 2 to be detected, and returning to the step S13 to judge and record if scratches exist until the peripheral wall of the wafer is detected.
As shown in fig. 12, preferably, step S4 includes the steps of:
s41, detecting a plurality of areas in sequence, and comparing according to the standard areas in the image pickup device 42;
s42, judging whether the current detection area is a scratch area, and continuously executing the step S41 in the non-scratch area;
s43, when judging as a scratch area, preferentially detecting the wafer 2 in the 8-grid area around the current scratch area by taking the current scratch area as the center;
s44, judging whether all areas are detected, and continuously executing the step S41 when the undetected areas exist;
s45, after detection of all areas is completed, enabling the detection base 1 to rotate along the center of the detection base;
s46, detecting all the areas again by the camera equipment 42, preferentially detecting the areas where scratches are located, and confirming the rotated positions of all the areas by the camera equipment 42 according to the positioning bar codes;
s47, judging whether all the areas are detected, and if not, continuing to execute the step S46.
The foregoing description of the embodiments has been provided for the purpose of illustrating the general principles of the application, and is not meant to limit the scope of the application, but to limit the application to the particular embodiments, and any modifications, equivalents, improvements, etc. that fall within the spirit and principles of the application are intended to be included within the scope of the application.
Claims (9)
1. A detection system for wafer scratches, comprising:
a storage table;
the detection base (1) is rotationally connected to the object placing table, and an accommodating groove (11) is formed in the top of the detection base (1);
the detection piece (3) is provided with a plurality of areas with equal size;
the wafer (2) is provided with at least one polished surface, the wafer (2) is detachably connected in the accommodating groove (11) and is far away from the bottom surface of the accommodating groove (11), and the wafer (2) and the accommodating groove (11) are coaxially arranged;
the detection device comprises a support frame (4) and a camera device (42) which are connected to the detection base (1), wherein the top end of the support frame (4) is rotatably connected with a first support (41), and the camera device (42) is arranged at one end of the first support (41);
the detection piece (3) is used for being placed on the wafer (2), the camera equipment (42) is used for carrying out scanning analysis on the wafer (2) through the detection piece (3), the top surface of the detection base (1) with be provided with a plurality of location bar codes between the edges of the detection piece (3), the ring channel has been seted up on the inner peripheral wall of holding tank (11), be provided with a plurality of pressure tiles (14) in the ring channel, a plurality of pressure tiles (14) with the setting of ring channel coaxial center, be provided with the cavity in the detection base (1), the cavity with ring channel intercommunication, be provided with the casing in the cavity, be provided with in the casing with telescopic link (13) that pressure tiles (14) are connected, telescopic link (13) are relative the one end setting of pressure tiles (14) is in the casing and are connected with bracing piece (12), bracing piece (12) with telescopic link (13) electricity is connected, bracing piece (12) are used for controlling telescopic link (13), pressure tiles (14) are provided with scratch area when detecting in order to detect the centre area around the scratch area.
2. A detection system for wafer scratches as claimed in claim 1, wherein: the detection sheet (3) is square, the detection sheet (3) is provided with a plurality of grids in an equidistant linear array with adjacent right-angle sides, through holes are formed between the adjacent grids in a perpendicular mode, and the through holes are the areas.
3. A detection system for wafer scratches as claimed in claim 2, wherein: the side length of the detection sheet (3) is larger than the diameter of the wafer (2), a plurality of measurement letters are arranged on two sides of the detection sheet (3) which are parallel to each other in a mirror image mode, and a plurality of measurement numbers are arranged on the other two sides of the detection sheet (3) which are parallel to each other in a mirror image mode.
4. A detection system for wafer scratches as claimed in claim 3, wherein: the top of casing is provided with incident equipment (15), the bottom surface of holding tank (11) is transparent material, incident equipment (15) can be launched and wear to establish holding tank (11) with the laser of wafer (2), the top of support frame (4) still is connected with second support (43), second support (43) with first support (41) are parallel, second support (43) are kept away from the one end of support frame (4) is connected with light source equipment (44), the diameter of light source equipment (44) with detect base (1) and equal, light source equipment (44) are used for receiving the laser of incident equipment (15) and analysis.
5. A system for inspecting scratches as claimed in claim 4, wherein: the emitting end of the incidence equipment (15) is provided with a plurality of emitting windows with the same size and position as the through holes, any one of the emitting windows can emit laser through the emitting end, and the receiving end of the light source equipment (44) is also provided with a plurality of receiving windows with the same size and position as the through holes.
6. A detection system for wafer scratches as claimed in claim 1, wherein: the outer peripheral wall of the detection base (1) is provided with a first positioning block (16), and the outer wall of the detection piece (3) is provided with a second positioning block (31).
7. The method for detecting the wafer scratch is characterized by comprising the following steps of: the detection system of claim 5, comprising the steps of:
s1, starting detection, mounting a wafer (2) in a containing groove (11) for positioning, and enabling a polishing surface to face to the right upper side;
s2, mounting the detection sheet (3) on the top surface of the detection base (1) and positioning;
s3, rotating the first bracket (41) to enable the camera equipment (42) to be coaxial with the detection base (1);
s4, the imaging device (42) scans the wafer (2) through the detection sheet (3) and records the position of the area where the scratch is located;
s5, judging whether all areas are recorded or not;
s6, rotating the second bracket (43) to enable the light source equipment (44) to be coaxial with the detection base (1), and enabling the first bracket (41) to be far away from the detection base (1);
s7, starting an incidence device (15) to irradiate a scratch area through a corresponding emission window according to the scratch position recorded by the image pickup device (42), and enabling laser to penetrate through the wafer (2) and enter a light source device (44);
s8, the light source device (44) analyzes the depth of the scratch of the current area according to the intensity of the irradiation laser.
8. The method for detecting a wafer scratch according to claim 7, wherein: the S1 comprises the following steps:
s11, a telescopic rod (13) controls the pressure tile (14) to be extruded towards the wafer (2) through a supporting rod (12);
s12, detecting scratches on the peripheral side wall of the wafer (2) by a pressure sensor on the pressure tile (14);
s13, judging whether scratches exist, detecting that the scratches exist, executing step S131, detecting that the scratches do not exist, and executing step S132 until all areas are detected;
s131, detecting that scratches exist according to the step S13, and recording data;
s132, detecting that no scratch exists according to the step S13, and continuously detecting other areas;
s14, rotating the wafer (2) to enable the peripheral wall of the wafer (2) to be detected, and returning to the step S13 to judge and record if scratches exist until the peripheral wall of the wafer is detected.
9. The method for detecting a wafer scratch according to claim 7, wherein: the step S4 comprises the following steps:
s41, detecting a plurality of areas in sequence, and comparing according to an internal standard area of the image pickup equipment (42);
s42, judging whether the current detection area is a scratch area, and continuously executing the step S41 in the non-scratch area;
s43, when judging as a scratch area, preferentially detecting the wafer (2) in the 8-grid area around the current scratch area by taking the current scratch area as the center;
s44, judging whether all areas are detected, and continuously executing the step S41 when the undetected areas exist;
s45, after detection of all areas is completed, enabling the detection base (1) to rotate along the center of the detection base;
s46, detecting all the areas again by the camera equipment (42), preferentially detecting the areas where scratches are located, and confirming the rotated positions of all the areas by the camera equipment (42) according to the positioning bar codes;
s47, judging whether all the areas are detected, and if not, continuing to execute the step S46.
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